CN107248536B - Light shutter device based on quantum well structure - Google Patents
Light shutter device based on quantum well structure Download PDFInfo
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- CN107248536B CN107248536B CN201710312256.XA CN201710312256A CN107248536B CN 107248536 B CN107248536 B CN 107248536B CN 201710312256 A CN201710312256 A CN 201710312256A CN 107248536 B CN107248536 B CN 107248536B
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- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 238000000926 separation method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 126
- 230000003287 optical effect Effects 0.000 claims description 32
- 230000031700 light absorption Effects 0.000 claims description 3
- 238000010893 electron trap Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 10
- 230000009471 action Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005524 hole trap Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of light shutter device based on quantum well structure, including substrate, grown buffer layer on substrate, grown quantum trap active layer on buffer layer；Mqw active layer successively includes the first barrier layer, the first separation layer, the first channel layer, the second channel layer, the second separation layer and the second barrier layer from top to bottom.There are two conducting channels for Quantum well active district tool of the invention, therefore the Coulomb attraction being not present between photo-generate electron-hole in conducting channel and caused by the not high problem of carrier mobility, greatly improve light induced electron mobility in the first channel layer, hole is not involved in the conduction of the first channel simultaneously, so as to avoid the low problem of hole mobility, and then eliminate the influence of the Coulomb attraction between photo-generate electron-hole, light induced electron mobility in the first channel layer is greatly improved, while also eliminating the low defect of hole mobility.The transmission that the present invention only has the electronics of high mobility to participate in the first channel signal, so as to promote the speed and frequency characteristic of photoswitch.
Description
Technical field
The invention belongs to technical field of semiconductors more particularly to a kind of light shutter devices based on quantum well structure.
Background technique
Photoconductivity switching is the opto-electronic device based on semiconductor material, uses up half conducting material of irradiation, produces inside it
Raw photo-generated carrier, resistivity decline and make break-over of device；When no light, device cut-off.Photoconductivity switching can be used for electric signal
High-speed sampling, switch and millimeter wave and the generation and detection of THz wave etc..
Common semiconductor light conductance material includes GaAs, cadmium selenide, indium phosphorus, amorphous silicon of low-temperature epitaxy etc..
The conventional photoconductivity switching based on semiconductor material, in order to reduce the switch time of photoswitch, commonly use low-temperature epitaxy, doping,
The technologies such as particle beam bombardment generate defect inside semiconductor, to reduce the service life of carrier.Although these methods can subtract
The switch time of small photoswitch, but the mobility of photo-generated carrier is also reduced simultaneously, to limit the speed and frequency of device
Bandwidth.
With the development of optic communication and semiconductor material, optical communicating waveband semiconductor mode-locked laser and fiber coupling are used
Photoconductivity switching device be developed, but on-off ratio, speed and frequency bandwidth are still undesirable, need from semiconductor material and
It is further improved in terms of device architecture.
Summary of the invention
Goal of the invention: in view of the above problems, the present invention proposes a kind of light shutter device based on quantum well structure.
Technical solution: to achieve the purpose of the present invention, the technical scheme adopted by the invention is that: one kind being based on Quantum Well knot
The light shutter device of structure, including substrate, grown buffer layer on substrate, grown quantum trap active layer on buffer layer；Wherein, Quantum Well
Active layer successively includes the first barrier layer, the first separation layer, the first channel layer, the second channel layer, the second separation layer from top to bottom
With the second barrier layer.
Second channel layer is hole trap or electron trap；Light absorption folder can be distributed between first channel layer and the second channel layer
Layer.
Mqw active layer upper surface is equipped with coplanar waveguide electrode, including first electrode, second electrode, third electrode, the
Four electrodes, the 5th electrode and the 6th electrode；Third electrode and the 4th electrode are Ohmic contact, are connected to the second channel layer, and with
First barrier layer, the first separation layer, the first channel layer pass through insulator separation；First electrode and second electrode can be interdigitation electricity
Pole structure.
Optical signal is incident from device upper surface or device lower surface is incident or incident from upper and lower surfaces simultaneously；Optical signal is
Single-wavelength light signal is a modulated optical signal；Either contain multiple optical wavelength optical signal, the amplitude of each optical wavelength and
Phase can be modulated；Either for the light pulse of control and the beat signal for the optical signal modulated.
The utility model has the advantages that compared with prior art, there are two conducting channels for Quantum well active district tool of the invention, therefore are leading
In electric channel there is no the Coulomb attraction between photo-generate electron-hole and caused by the not high problem of carrier mobility, make the
Light induced electron mobility greatly improves in one channel layer, while hole is not involved in the conduction of the first channel, so as to avoid hole
The low problem of mobility, and then the influence of the Coulomb attraction between photo-generate electron-hole is eliminated, make photoproduction in the first channel layer
Electron mobility greatly improves, while also eliminating the low defect of hole mobility.The present invention only has the electronics of high mobility to join
With the transmission of the first channel signal, so as to promote the speed and frequency characteristic of photoswitch.
Detailed description of the invention
Fig. 1 is the top view of the embodiment of the present invention 1；
Fig. 2 is cross-sectional view of the embodiment of the present invention 1 along the direction A；
Fig. 3 is cross-sectional view of the embodiment of the present invention 1 along the direction B；
Fig. 4 is light photomixing signal schematic representation；
Fig. 5 is the top view of the embodiment of the present invention 2；
Fig. 6 is the top view of the embodiment of the present invention 3；
Fig. 7 is cross-sectional view of the embodiment of the present invention 3 along the direction A；
Fig. 8 is cross-sectional view of the embodiment of the present invention 3 along the direction B；
Fig. 9 is the schematic diagram of the embodiment of the present invention 4.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
Embodiment 1
It is the light shutter device of the present invention based on quantum well structure, including substrate 1 as shown in Figs. 1-3, on substrate 1
Grown buffer layer 2, grown quantum trap active layer on buffer layer 2.Wherein, mqw active layer successively includes: first from top to bottom
Barrier layer 8, the first separation layer 7, the first channel layer 6, the second channel layer 5, the second separation layer 4, the second barrier layer 3.Second channel
The forbidden bandwidth of layer 5 is greater than the forbidden bandwidth of the first channel layer 6.First barrier layer 8 and the second barrier layer 3 are δ doping, wherein
Barrier layer 8 is N-shaped heavy doping, and barrier layer 3 is p-type heavy doping.
Electrode structure as shown in Figure 1 is arranged in the upper surface of mqw active layer, contains coplanar waveguide electrode, including the 5th
Electrode 17, first electrode 9, second electrode 10 and the 6th electrode 18.Third electrode 11 and the 4th electrode 12 are Ohmic contact, and are led to
Cross N-shaped heavy doping to be connected to the second channel layer 5,13 and 14 in N-shaped heavily doped region such as Fig. 3, and with the first barrier layer 8,
One separation layer 7, the first channel layer 6 are isolated by insulating layer 15,16, and insulating layer can be oxide, dielectric or groove.
First barrier layer 8, the first separation layer 7, the first channel layer 6 are N-shaped, and the second channel layer 5 is p-type.Believe in no light
Number when, due to the effect of the second barrier layer 3 ionization acceptor, the electronics of the first channel layer 6 is completely depleted, and makes the first channel layer 6
It is held off, the second channel layer 5 is connected at this time.Optical signals device upper surfaces is incident or device lower surface is incident or simultaneously
From upper and lower surfaces incidence, the first channel 6 is made to generate electron-hole pair, the energy of optical signal is greater than the taboo of the first channel layer materials
Bandwidth and less than the forbidden bandwidth of the second channel layer materials.Electron-hole pair is rapidly separated under the action of vertical electric field, light
Raw electronics is in the first channel layer, Continuity signal；Hole moves to the second channel layer under electric field action, and the second channel can be
Hole trap makes photohole flow out device by the second channel layer.
Optical signal can be single-wavelength light signal, and single-wavelength light signal is a modulated optical signal；It is also possible to containing more
The optical signal of a optical wavelength, wherein the amplitude and phase of each optical wavelength can be modulated；It is also possible to the light for control
The beat signal of pulse and the optical signal modulated, such as light pulse Sampled optical signals.
As shown in figure 4, several optical signals of optical signals are formed by an optics, such as the light arteries and veins for control
Punching and the optical signal modulated, but not limited to this.
Device can be with electrode 9 of the applied electronic signal on the inside of mqw active layer and electrode 10, under illumination, signal when working
It is transmitted by light induced electron through the first channel layer 6, photohole is limited in second layer channel layer, is extracted by electrode 11,12, not shadow
Ring electric signal transmitting.
Substrate 1 selects III-V race's semiconductor material, buffer layer 2, the first barrier layer 8, the first separation layer 7, the first channel layer
6, the second channel layer 5, the second separation layer 4, the second barrier layer 3 material select III-V race close with substrate lattice constant half
Conductor material.
Substrate 1 can be selected but be not limited to InP etc..Buffer layer 2 can be selected but be not limited to InxAl (1-x) As etc., 0 < x < 1.The
One barrier layer 8 can be selected but be not limited to InxAl (1-x) As etc., 0 < x < 1.First separation layer 7 can be selected but be not limited to InxAl (1-
X) As etc., 0 < x < 1.First channel layer 6 can be selected but be not limited to InxGa (1-x) As etc., 0 < x < 1.Second channel layer 5 can be selected
But be not limited to GaSbyAs (1-y) etc., 0 < y < 1.Second separation layer 4 can be selected but be not limited to GaSbyAs (1-y) etc., 0 < y < 1.The
Two barrier layers 3 can be selected but be not limited to InxAl (1-x) As etc., 0 < x < 1.
In some example schemes, insert layer is also distributed between the first channel layer 6 and the second channel layer 5.Insert layer
Material can select but be not limited to InxGa (1-x) SbyAs (1-y) etc., 0 < x < 1,0 < y < 1.
Embodiment 2
As shown in figure 5, being interdigital electrode configuration, other structures and 1 phase of embodiment between coplanar waveguide electrode 9 and 10
Together.
Embodiment 3
As shown in figs 6-8, coplanar waveguide electrode 9 is Schottky electrode structure, and passes through insulating layer 19,20 and grounding electrode
17,18 isolation.
First channel layer 6 be it is enhanced, when voltage is not added in first electrode 9, the first channel layer is by pinch off.Second channel layer 5
For depletion type, conducting channel is connected when voltage is not added in first electrode 9.First channel layer and the second channel layer are all n-type semiconductor
Material.When work, 9 making alive of first electrode, institute's making alive protects the first channel layer 6 less than the threshold voltage of the first channel layer 6
Off state is held, the second channel layer 5 has been connected at this time.Optical signals device upper surface incidence makes the first channel layer generate electronics-
Hole pair, the energy of optical signal are greater than the forbidden bandwidth of the first channel layer materials and wide less than the forbidden band of the second channel layer materials
Degree.Electron-hole pair is rapidly separated under the vertical electric field effect that first electrode 9 is formed, and electronics is in the first channel layer 6 and leads
It is logical, electric signal is realized from first electrode 9 to the transmitting of second electrode 10.It is floated under electric field action to the second channel layer 5 in hole
It moves and answers merga pass with the electronics in the second channel layer 5 and light is discharged by the external circuit that third electrode 11, the 4th electrode 12 form
Raw hole accumulates it in the second channel layer, so that making photohole not influences the transmission of the first channel signal.
It may be interdigital electrode configuration between coplanar waveguide electrode 9 and 10 in the embodiment.
Embodiment 4
As shown in figure 9, light absorption interlayer 21, the first channel layer are distributed between the first channel layer 6 and the second channel layer 5
6 and second the forbidden bandwidth of channel layer 5 be all larger than the forbidden bandwidth of light absorbing layer 21, the energy of optical signal is greater than light absorbing layer 21
Forbidden bandwidth and less than the forbidden bandwidth of the first channel layer 6 and the second channel layer 5, light absorbing layer 21 can be multi layer quantum well
The light absorbing layer of structure can also be adulterated with current uniline carrier detector structure having the same, such as light absorbing layer
Gradual change etc..Device other structures can be same as Example 1, also can be with same as Example 2.
Claims (8)
1. a kind of light shutter device based on quantum well structure, it is characterised in that: including substrate (1), grown buffer layer on substrate
(2), grown quantum trap active layer on buffer layer；Wherein, mqw active layer from top to bottom successively include the first barrier layer (8),
First separation layer (7), the first channel layer (6), the second channel layer (5), the second separation layer (4) and the second barrier layer (3).
2. the light shutter device according to claim 1 based on quantum well structure, it is characterised in that: the second channel layer is sky
Cave trap or electron trap.
3. the light shutter device according to claim 1 based on quantum well structure, it is characterised in that: on mqw active layer
Surface is equipped with coplanar waveguide electrode, including first electrode (9), second electrode (10), third electrode (11), the 4th electrode (12),
5th electrode (17) and the 6th electrode (18)；
Third electrode (11) and the 4th electrode (12) and mqw active layer upper surface are Ohmic contact, are connected with the second channel layer
It is logical, and pass through insulator separation with the first barrier layer, the first separation layer, the first channel layer.
4. the light shutter device according to claim 1 based on quantum well structure, it is characterised in that: optical signal is from device
Surface is incident or device lower surface is incident or incident from upper and lower surfaces simultaneously.
5. the light shutter device according to claim 1 based on quantum well structure, it is characterised in that: the first channel layer (6)
And second be distributed with light absorption interlayer (21) between channel layer (5).
6. the light shutter device according to claim 3 based on quantum well structure, it is characterised in that: first electrode (9) and
Second electrode (10) is interdigital electrode configuration.
7. the light shutter device according to claim 4 based on quantum well structure, it is characterised in that: optical signal is Single wavelength
Optical signal is a modulated optical signal；Either contain the optical signal of multiple optical wavelength, the amplitude and phase of each optical wavelength
It can be modulated；Either for the light pulse of control and the beat signal for the optical signal modulated.
8. the light shutter device according to claim 1 based on quantum well structure, it is characterised in that: the upper surface of device and
Lower surface is equipped with the anti-reflection film for increasing optical signal transmitance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710312256.XA CN107248536B (en) | 2017-05-05 | 2017-05-05 | Light shutter device based on quantum well structure |
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| CN201710312256.XA CN107248536B (en) | 2017-05-05 | 2017-05-05 | Light shutter device based on quantum well structure |
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| CN107248536B true CN107248536B (en) | 2019-01-29 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109524490B (en) * | 2018-09-12 | 2020-07-17 | 中国科学院半导体研究所 | ZnO/GaN heterojunction nanowire optical switch and preparation method thereof |
| CN115036378B (en) * | 2022-04-28 | 2023-11-28 | 南昌大学 | AlInGaN-based single pn junction polychromatic detector and signal detection method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0965872A1 (en) * | 1998-06-19 | 1999-12-22 | Hitachi Europe Limited | An optically active device |
| CN102324436A (en) * | 2011-09-22 | 2012-01-18 | 中国科学院半导体研究所 | Large-mismatch silicon-based substrate antimonide transistor with high electron mobility and manufacturing method thereof |
| CN103928558A (en) * | 2014-04-17 | 2014-07-16 | 吉林大学 | Double-color all-optical switch based on quantum well inter-subband transition cavity-induced coherence effect |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236774B1 (en) * | 1999-03-22 | 2001-05-22 | Gemfire Corporation | Optoelectronic and photonic devices formed of materials which inhibit degradation and failure |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0965872A1 (en) * | 1998-06-19 | 1999-12-22 | Hitachi Europe Limited | An optically active device |
| CN102324436A (en) * | 2011-09-22 | 2012-01-18 | 中国科学院半导体研究所 | Large-mismatch silicon-based substrate antimonide transistor with high electron mobility and manufacturing method thereof |
| CN103928558A (en) * | 2014-04-17 | 2014-07-16 | 吉林大学 | Double-color all-optical switch based on quantum well inter-subband transition cavity-induced coherence effect |
Non-Patent Citations (1)
| Title |
|---|
| "A Switching Mechanism Based on Photonic Quantum-well Effects";Liu Dandong,et al.;《光子学报》;20160930;第35卷(第9期);第1311-1323页 |
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