CN107240415A - Storage device - Google Patents
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- CN107240415A CN107240415A CN201710417905.2A CN201710417905A CN107240415A CN 107240415 A CN107240415 A CN 107240415A CN 201710417905 A CN201710417905 A CN 201710417905A CN 107240415 A CN107240415 A CN 107240415A
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- transistor
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- storage device
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- phase inverter
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A kind of storage device, including the first phase inverter, the second phase inverter, the first transistor, second transistor, third transistor and the 4th transistor.The input of the output end of first phase inverter and the second phase inverter is all coupled to the first back end, and the output end of the input of the first phase inverter and the second phase inverter is all coupled to the second back end.The first transistor and second transistor coupled in parallel are between the first back end and the first Inport And Outport Node.Third transistor and the 4th coupled in parallel are coupled between the second back end and the second Inport And Outport Node.The first transistor and third transistor are selectively turned on or are not turned on according to the first control signal.Second transistor and the 4th transistor are selectively turned on or are not turned on according to the second control signal.The present invention can improve the static noise margin of storage device simultaneously and write noise margin, so as to strengthen the storage efficiency of storage device.
Description
Technical field
The present invention can lift static noise margin (Static simultaneously on a kind of storage device especially with regard to one kind
Noise Margin, SNM) and write the storage device and its control method of noise margin (Write Noise Margin, WNM).
Background technology
Static RAM (Static Random-Access Memory, SRAM) is random access memory
One kind.The meaning of so-called " static state ", as long as referring to that this memory is remained powered on, the data of the inside storage just can be with constant
Keep.Conversely, when supply of electric power stops, the data stored by static RAM will disappear at once, therefore it is also
It is referred to as volatile memory (Volatile Memory).
However, with manufacture of semiconductor increasingly micro, the voltage supply of chip also gradually step-down.Supplied in low-voltage
Under environment, the static noise margin (Static Noise Margin, SNM) of static RAM and noise margin is write
Two indexs such as (Write Noise Margin, WNM) can all glide simultaneously, and this trend is feared to be unfavorable for static random access memory
The practical application efficiency of device.In view of this, it is necessary to propose a kind of brand-new circuit design really, to overcome prior art institute face
The problem of facing.
The content of the invention
In the preferred embodiment, the present invention provides a kind of storage device, including：One first phase inverter, with an input
With an output end, the input of wherein first phase inverter is coupled to one second back end, and first phase inverter should
Output end is coupled to one first back end；One second phase inverter, with an input and an output end, wherein this is second anti-phase
The input of device is coupled to first back end, and the output end of second phase inverter is coupled to second data section
Point；One the first transistor, the control end with a control end, a first end and one second end, the wherein the first transistor
For receiving one first control signal, the first end of the first transistor is coupled to first back end, and this is first brilliant
Second end of body pipe is coupled to one first Inport And Outport Node；One second transistor, with a control end, a first end and
The control end at one second end, the wherein second transistor is used to receiving one second control signal, the second transistor this
One end is coupled to first back end, and second end of the second transistor is coupled to first Inport And Outport Node；One
Third transistor, with a control end, a first end and one second end, wherein control end of the third transistor is used to connect
Receive first control signal, the first end of the third transistor is coupled to one second Inport And Outport Node, and the 3rd crystal
Second end of pipe is coupled to second back end；And one the 4th transistor, with a control end, a first end and one
Second end, the wherein control end of the 4th transistor are used to receive second control signal, the 4th transistor this first
End is coupled to second Inport And Outport Node, and second end of the 4th transistor is coupled to second back end.
In certain embodiments, the storage device also includes：There is provided first control signal for one first wordline；And one
There is provided second control signal for second wordline.
In certain embodiments, the first transistor, the second transistor, the third transistor and the 4th transistor
It is all N-type mos field effect transistor (N-channel Metal-Oxide-Semiconductor
Field-Effect Transistor, NMOS Transistor).
In certain embodiments, the first transistor, the second transistor, the third transistor and the 4th transistor
For lifting the static noise margin (Static Noise Margin, SNM) of the storage device and writing noise margin (Write
Noise Margin, WNM).
In certain embodiments, first phase inverter includes：One the 5th transistor, with a control end, a first end with
And one second end, the control end of wherein the 5th transistor is coupled to second back end, the 5th transistor this
One end is coupled to a supply current potential, and second end of the 5th transistor is coupled to first back end；And one the 6th
Transistor, with a control end, a first end and one second end, the control end of wherein the 6th transistor be coupled to this
Two back end, the first end of the 6th transistor is coupled to an earthing potential, and the second end coupling of the 6th transistor
It is connected to first back end.
In certain embodiments, the 5th transistor is P-type mos field-effect transistor (P-
Channel Metal-Oxide-Semiconductor Field-Effect Transistor, PMOS Transistor), and
6th transistor is N-type mos field effect transistor.
In certain embodiments, the transistor size of the storage device is sequentially from large to small：The first transistor and should
The combination of both second transistors, the 6th transistor, the second transistor, the first transistor, the 5th transistor.
In certain embodiments, second phase inverter includes：One the 7th transistor, with a control end, a first end with
And one second end, the control end of wherein the 7th transistor is coupled to first back end, the 7th transistor this
One end is coupled to the supply current potential, and second end of the 7th transistor is coupled to second back end；And one the 8th
Transistor, with a control end, a first end and one second end, the control end of wherein the 8th transistor be coupled to this
One back end, the first end of the 8th transistor is coupled to the earthing potential, and the second end coupling of the 8th transistor
It is connected to second back end.
In certain embodiments, the 7th transistor is P-type mos field-effect transistor, and the 8th
Transistor is N-type mos field effect transistor.
In certain embodiments, the transistor size of the storage device is sequentially from large to small：The third transistor and should
The combination of both 4th transistors, the 8th transistor, the 4th transistor, the third transistor, the 7th transistor.
The present invention can improve the static noise margin of storage device simultaneously and write noise margin, so as to strengthen storage device
Store efficiency.
Brief description of the drawings
Fig. 1 is the schematic diagram for showing the storage device according to one embodiment of the invention；
Fig. 2 is the schematic diagram for showing the storage device according to one embodiment of the invention；
Fig. 3 is the flow chart for the control method for showing the storage device according to one embodiment of the invention；
Fig. 4 A are the signal waveforms when storage device for showing according to one embodiment of the invention operates in read mode
Figure；
Fig. 4 B are the signal waveforms when storage device for showing according to one embodiment of the invention operates in write mode
Figure；And
Fig. 5 is the schematic diagram for showing the control circuit according to one embodiment of the invention.
Wherein, symbol is simply described as follows in accompanying drawing：100th, 200~storage device；110th, 210~the first phase inverter；
120th, 220~the second phase inverter；130~the 3rd phase inverter；140~the 4th phase inverter；150~the 5th phase inverter；550~control
Circuit；560~decoder；570~delayer；580~multiplexer；590~NAND gate；M1~the first transistor；M2~the second
Transistor；M3~third transistor；The transistor of M4~the 4th；The transistor of M5~the 5th；The transistor of M6~the 6th；M7~7th is brilliant
Body pipe；The transistor of M8~the 8th；The back end of ND1~first；The back end of ND2~second；The inputoutput section of NIO1~first
Point；The Inport And Outport Node of NIO2~second；The control signal of SC1~first；The control signal of SC2~second；SD~postpones signal；SE
~selection signal；SR~decoded signal；SS~adjustment signal；TD~time delay；The data potential of VD1~first；VD2~the second
Data potential；W1, W2~pulse width；The wordline of WL1~first；The wordline of WL2~second.
Embodiment
For objects, features and advantages of the present invention can be become apparent, it is cited below particularly go out the present invention specific embodiment,
And coordinate institute's accompanying drawings, it is described in detail below.
Some vocabulary have been used among specification and claims to censure specific element.Those skilled in the art
, it is to be appreciated that hardware manufacturer may call same element with different nouns.Present specification and claims are simultaneously
Not in the way of the difference of title is used as differentiation element, but it is used as the criterion of differentiation with the difference of element functionally.
"comprising" and the word of " comprising " one mentioned in working as in specification and claims in the whole text are open term, therefore should be explained
Into " include but be not limited to "." substantially " word then refers to that in acceptable error range those skilled in the art can
The technical problem is solved in the range of certain error, the basic technique effect is reached.In addition, " coupling " one word is in this theory
Include any direct in bright book and be indirectly electrically connected with means.Therefore, if a first device is coupled to one second described in text
Device, then the second device can be directly electrically connected to by representing the first device, or via other devices or connection means
Ground connection is electrically connected to the second device.
Fig. 1 is the schematic diagram for showing the storage device 100 according to one embodiment of the invention.Storage device (Storage
Device) 100 can be a static RAM (Static Random-Access Memory, SRAM) a storage
Memory cell (Storage Unit).As shown in figure 1, storage device 100 at least includes：One first phase inverter (Inverter) 110,
One second phase inverter 120, a first transistor (Transistor) M1, a second transistor M2, a third transistor M3 and
One the 4th transistor M4.First phase inverter 110 and the second phase inverter 120 are from beginning to end each other, to form closed circuit circulation,
Wherein one first data potential VD1 and one second data potential VD2 can be maintained at one first number of this closed circuit circulation respectively
According on node ND1 and one second back end ND2, and the first data potential VD1 and the second data potential VD2 can have it is opposite
Logic level.The first transistor M1 and second transistor M2 are collectively forming a first switch circuit (Switch Circuit),
Wherein first switch circuit optionally by the first back end ND1 be coupled to one first input and output (Input/Output,
I/O) node NIO1.Third transistor M3 and the 4th transistor M4 are collectively forming a second switch circuit, wherein second switch electricity
Second back end ND2 is optionally coupled to one second Inport And Outport Node NIO2 by road.First switch circuit and second
On-off circuit selectively turns on (Closed) according to one first control signal SC1 and one second control signal SC2 or not led
Logical (Open).In certain embodiments, the first Inport And Outport Node NIO1 is coupled to a bit line (Bit Line), and second inputs
Output node NIO2 is coupled to another bit line, and wherein this two bit line can be used for writing data to the first back end ND1 and second
Back end ND2, or reading data by the first back end ND1 and the second back end ND2 comes out.
Specifically, the circuit structure of storage device 100 can be as what follows.First phase inverter 110 has an input
With an output end, wherein the input of the first phase inverter 110 is coupled to the second back end ND2, and the first phase inverter 110 is defeated
Go out end and be coupled to the first back end ND1.Second phase inverter 120 has an input and an output end, wherein the second phase inverter
120 input is coupled to the first back end ND1, and the output end of the second phase inverter 120 is coupled to the second back end
ND2.In the embodiment in figure 1, the first transistor M1, second transistor M2, third transistor M3 and the 4th transistor M4 be all
For N-type mos field effect transistor (N-channel Metal-Oxide-Semiconductor Field-
Effect Transistor, NMOS Transistor).The first transistor M1 has a control end, a first end and one the
Two ends, wherein the first transistor M1 control end are used to receive the first control signal SC1, the first transistor M1 first end coupling
To the first back end ND1, and the first transistor M1 the second end is coupled to the first Inport And Outport Node NIO1.Second transistor
M2 has a control end, a first end and one second end, and wherein second transistor M2 control end is used to receive the second control
Signal SC2, second transistor M2 first end are coupled to the first back end ND1, and second transistor M2 the second end is coupled
To the first Inport And Outport Node NIO1.Third transistor M3 has a control end, a first end and one second end, wherein the 3rd
It is defeated that transistor M3 control end is coupled to the second input for reception the first control signal SC1, third transistor M3 first end
Egress NIO2, and third transistor M3 the second end is coupled to the second back end ND2.4th transistor M4 has a control
End, a first end and one second end, wherein the 4th transistor M4 control end is used to receive the second control signal SC2, the 4th
The transistor M4 first end is coupled to the second Inport And Outport Node NIO2, and the 4th transistor M4 second end is coupled to
Two back end ND2.It must be noted that in foregoing each transistor, control end can be a grid (Gate) for transistor,
And first end and the second end one of which can be a source electrode (Source) for transistor, another one can be a drain electrode of transistor
(Drain).Source electrode symbol (arrow on transistor) shown in Fig. 1 is only reference, actually probably due to applying current potential
Difference causes the source electrode of transistor and drain electrode to exchange mutually.In further embodiments, the first transistor M1, second transistor
M2, third transistor M3 and the 4th transistor M4 can also make into P-type mos field-effect transistor (P-
Channel Metal-Oxide-Semiconductor Field-Effect Transistor, PMOS Transistor) come
Implement.
In present pre-ferred embodiments, the first transistor M1, second transistor M2, third transistor M3 and the 4th are brilliant
Body pipe M4 is used to lift the static noise margin (Static Noise Margin, SNM) of storage device 100 and writes noise margin
(Write Noise Margin, WNM).For example, the first transistor M1, second transistor M2, third transistor M3 and
4th transistor M4 can be operated with following manner.
In a read mode (Read Mode), first formed by the first transistor M1 and second transistor M2 opens
Powered-down road can it is partially ON (that is, the first transistor M1 and second transistor M2 one of which conducting, but another one do not lead
It is logical) so that there is relatively large resistance value between the first Inport And Outport Node NIO1 and the first back end ND1；And by
The second switch circuit that three transistor M3 and the 4th transistor M4 are formed also can it is partially ON (that is, third transistor M3 and
4th transistor M4 one of which is turned on, but another one is not turned on) so that the second Inport And Outport Node NIO2 and the second data
There is relatively large resistance value between node ND2.During read mode, because first switch circuit and second switch circuit
Larger resistance value, the first back end ND1 the first data potential VD1 and the second back end ND2 the second number are all provided
All it is difficult to be changed according to current potential VD2, therefore can effectively strengthens the static noise margin of storage device 100.
In a write mode (Write Mode), first formed by the first transistor M1 and second transistor M2 opens
Powered-down road can be fully on (that is, both the first transistor M1 and second transistor M2 are all turned on) so that the first input and output
There is relatively small resistance value between node NIO1 and the first back end ND1；And by third transistor M3 and the 4th crystal
The second switch circuit that pipe M4 is formed also can it is fully on (that is, both third transistor M3 and the 4th transistor M4 are all led
It is logical) so that there is relatively small resistance value between the second Inport And Outport Node NIO2 and the second back end ND2.In write-in
During pattern, because first switch circuit and second switch circuit all provide less resistance value, the of the first back end ND1
One data potential VD1 and the second back end ND2 the second data potential VD2 is all easier to change, therefore can effectively strengthen storage
Cryopreservation device 100 writes noise margin.
It must be noted that the evolutionary approach of traditional static RAM is generally only capable of reinforcing static noise and held
Limit or write noise margin alternatively.By comparison, the present invention can lift static noise margin simultaneously and write noise margin, therefore can
Significantly improve the operating characteristics of storage device 100.
Fig. 2 is the schematic diagram for showing the storage device 200 according to one embodiment of the invention.Fig. 2 is similar with Fig. 1.
In Fig. 2 embodiment, storage device 200 also includes one first wordline (Word Line) WL1 and one second wordline WL2.First word
Line WL1 is coupled to the first transistor M1 control end and third transistor M3 control end, with provide the first control signal SC1 to
The first transistor M1 and third transistor M3.Second wordline WL2 is coupled to second transistor M2 control end and the 4th transistor
M4 control end, to provide the second control signal SC2 to second transistor M2 and the 4th transistor M4.
One first phase inverter 210 of storage device 200 includes one the 5th transistor M5 and one the 6th transistor M6, wherein the
Five transistor M5 can be P-type mos field-effect transistor, and the 6th transistor M6 can be N-type metal oxide
Semiconductor field effect transistor.5th transistor M5 has a control end, a first end and one second end, wherein the 5th crystal
The first end that pipe M5 control end is coupled to the second back end ND2, the 5th transistor M5 is coupled to a supply current potential (Supply
Voltage) VDD, and the 5th transistor M5 the second end is coupled to the first back end ND1.6th transistor M6 has a control
End processed, a first end and one second end, wherein the 6th transistor M6 control end is coupled to the second back end ND2, the 6th
Transistor M6 first end is coupled to an earthing potential (Ground Voltage) VSS, and the 6th transistor M6 the second end coupling
It is connected to the first back end ND1.It is brilliant that one second phase inverter 220 of storage device 200 includes one the 7th transistor M7 and one the 8th
Body pipe M8, wherein the 7th transistor M7 can be P-type mos field-effect transistor, and the 8th transistor M8 can be
N-type mos field effect transistor.7th transistor M7 has a control end, a first end and one second
End, wherein the 7th transistor M7 control end is coupled to the first back end ND1, the 7th transistor M7 first end is coupled to confession
Current potential VDD is answered, and the 7th transistor M7 the second end is coupled to the second back end ND2.8th transistor M8 has a control
End, a first end and one second end, wherein the 8th transistor M8 control end is coupled to the first back end ND1, the 8th is brilliant
Body pipe M8 first end is coupled to earthing potential VSS, and the 8th transistor M8 the second end is coupled to the second back end ND2.
In certain embodiments, transistor size (the Transistor Size, that is, the W/ of transistor of storage device 200
L ratio sizes, wherein W represents the grid width of transistor, and L represents the grid length of transistor) be sequentially from large to small：First
Both transistor M1 and second transistor M2 combination, the 6th transistor M6, second transistor M2, the first transistor M1, the 5th
Transistor M5 (that is, M1+M2>M6>M2>M1>M5).
In certain embodiments, the transistor size of storage device 200 is sequentially from large to small：Third transistor M3 and
Both four transistor M4 combination, the 8th transistor M8, the 4th transistor M4, third transistor M3, the 7th transistor M7 are (also
That is, M3+M4>M8>M4>M3>M7).
In certain embodiments, the first transistor M1 and third transistor M3 have identical transistor size (that is, M1
=M3), second transistor M2 and the 4th transistor M4 have identical transistor size (that is, M2=M4), the 5th transistor
M5 and the 7th transistor M7 have an identical transistor size (that is, M5=M7), and the 6th transistor M6 and the 8th transistor
M8 has identical transistor size (that is, M6=M8).
Above transistor size show that it contributes to the static state for optimizing storage device 200 according to many experiments result
Noise margin and noise margin is write, them can be made all to reach its maximum.Remaining feature of Fig. 2 storage device 200 is all with Fig. 1's
Storage device 200 is similar, so two embodiments may achieve similar operating effect.
Fig. 3 is the flow for the control method for showing the storage device 100 (or 200) according to one embodiment of the invention
Figure.This control method can arrange in pairs or groups with Fig. 1 storage device 100 or Fig. 2 storage device 200, and comprise the following steps.First,
In step S310 there is provided a storage device 100 (or 200), wherein storage device 100 (or 200) includes one first phase inverter 110
(or 210), one second phase inverter 120 (or 220), a first transistor M1, a second transistor M2, a third transistor M3 with
And one the 4th transistor M4, wherein the one of an output end of the first phase inverter 110 (or 210) and the second phase inverter 120 (or 220)
Input is all coupled to one first back end ND1, and an input and the second phase inverter for the first phase inverter 110 (or 210)
One output end of 120 (or 220) is all coupled to one second back end ND2.In step S320, according to one first control signal
SC1 controls the first transistor M1, so that the first back end ND1 optionally is coupled into one first Inport And Outport Node
NIO1.In step S330, second transistor M2 is controlled according to one second control signal SC2, with optionally by the first data
Node ND1 is coupled to the first Inport And Outport Node NIO1.In step S340, the 3rd crystalline substance is controlled according to the first control signal SC1
Body pipe M3, so that the second back end ND2 optionally is coupled into one second Inport And Outport Node NIO2.Finally, in step
S350, the 4th transistor M4 is controlled according to the second control signal SC2, to be optionally coupled to the second back end ND2
Second Inport And Outport Node NIO2.It must be noted that above step need not be performed successively, and Fig. 1,2 embodiment is all
Feature can be all applied among Fig. 3 control method, will not be repeated here.
When Fig. 4 A are that the storage device 100 (or 200) for showing according to one embodiment of the invention operates in read mode
Signal waveforms.In Fig. 4 A embodiment, foregoing control method also includes：In a read mode, delay second is controlled
Signal SC2 processed so that the second control signal SC2 has later startup time and shorter compared to the first control signal SC1
Pulse width.Pulse width herein refers to each control signal in the interval time span of high logic level.Specifically,
Second control signal SC2 is delayed by a time delay TD so that the second control signal SC2 pulse width W2 is compared with the first control letter
Number SC1 pulse width W1 is shorter.Both time delay TD and the second control signal SC2 pulse width W2 summation can just etc.
In the first control signal SC1 pulse width W1 (that is, TD+W2=W1).In certain embodiments, time delay TD accounts for
The 10% to 50% of one control signal SC1 pulse width W1, preferably about 20%.In phase time delay TD of read mode
Between, only the first transistor M1 and third transistor M3 conductings, and second transistor M2 and the 4th transistor M4 are then not turned on.Such as
It is preceding described, because the first transistor M1 and third transistor M3 size are less than second transistor M2 and the 4th transistor M4 chi
Very little, this design can improve the resistance value between the first Inport And Outport Node NIO1 and the first back end ND1, and improve second
Resistance value between Inport And Outport Node NIO2 and the second back end ND2, thus can effectively strengthen storage device 100 (or
200) static noise margin.After the time delay TD of read mode, the first transistor M1, second transistor M2, the 3rd
Transistor M3 and the 4th transistor M4 are all turned on, more to accelerate the reading speed of storage device 100 (or 200).
When Fig. 4 B are that the storage device 100 (or 200) for showing according to one embodiment of the invention operates in write mode
Signal waveforms.In Fig. 4 B embodiment, aforementioned control method also includes：In a write mode, the second control is not postponed
Signal SC2 processed so that there is identical to start time and isometric arteries and veins by the second control signal SC2 and the first control signal SC1
Rush width.Pulse width herein refers to each control signal in the interval time span of high logic level.Specifically, second
Control signal SC2 is not delayed by so that the second control signal SC2 pulse width W2 and the first control signal SC1 pulse are wide
Spend both W1 isometric (that is, W2=W1).During whole write mode, the first transistor M1, second transistor M2, the 3rd crystalline substance
Body pipe M3 and the 4th transistor M4 are all turned on, and this design can reduce the first Inport And Outport Node NIO1 and the first back end
Resistance value between resistance value between ND1, and reduction the second Inport And Outport Node NIO2 and the second back end ND2, therefore
Storage device 100 (or 200) can effectively be strengthened writes noise margin.
The first control signal SC1 and the second control signal SC2 as shown in Fig. 4 A, 4B can be as produced by a control circuits.
Following examples will illustrate the structure of this control circuit, but it is only for example, and is not intended to limit the scope of the present invention.
Fig. 5 is the schematic diagram for showing the control circuit 550 according to one embodiment of the invention.Control circuit 550 can be with
Foregoing storage device 100 (or 200) collocation is used, to control the first wordline WL1 and the second wordline WL2.In Fig. 5 embodiment
In, control circuit 550 includes：The multiplexer of the delayer of one decoder (Decoder) 560, one (Delay Unit) 570, one
(Multiplexer) 580, one the 3rd phase inverter 130, one the 4th phase inverter 140, one the 5th phase inverter 150 and a NAND gate
(NAND Gate)590.Decoder 560 can produce a decoded signal SR according to an address signal (Address Signal) SA.
For example, when there is multiple storage devices to be used together, address signal SA may indicate that the address of these storage device one of which, with
A storage device is selected, and a reading program or a write-in program are performed to it.Selected storage device will be received with height
The decoded signal SR of logic-level pulses, and other non-selected storage devices will receive the permanent decoding for low logic level and believe
Number SR.
3rd phase inverter 130 has an input and an output end, is solved wherein the input of the 3rd phase inverter is used to receive
Code signal SR.4th phase inverter 140 has an input and an output end, wherein the input of the 4th phase inverter 140 is coupled to
The output end of 3rd phase inverter 130, and the output end of the 4th phase inverter 140 is used to export the first control signal SC1.Delayer
Decoded signal SR can be postponed a time delay TD by 570, to produce a postpones signal SD.Multiplexer 580 can be believed according to an adjustment
Number SS selects decoded signal SR or postpones signal SD one of both as a selection signal SE.For example, when adjustment signal SS is
During high logic level (that is, logical one), multiplexer 580 may be selected decoded signal SR alternatively signal SE (that is, SE=
SR)；And when adjusting signal SS and being low logic level (that is, logical zero), the selectable delay signal SD conducts of multiplexer 580
Selection signal SE (that is, SE=SD).NAND gate 590 has a first input end, one second input and an output end, its
The first input end of middle NAND gate 590 is used to receive decoded signal SR, and the second input of NAND gate 590 is used to receive selection
Signal SE.5th phase inverter 150 have an input and an output end, wherein the input of the 5th phase inverter 150 be coupled to
The output end of NOT gate 590, and the output end of the 5th phase inverter 150 is used to export the second control signal SC2.In Fig. 5 embodiment
In, if adjustment signal SS is high logic level, the second control signal SC2 will not be delayed by, and it is applicable to storage device
The write mode (as shown in Figure 4 B) of 100 (or 200)；If conversely, adjustment signal SS is low logic level, the second control signal
SC2 will be delayed by a time delay TD, and it is applicable to the read mode (as shown in Figure 4 A) of storage device 100 (or 200).
The present invention proposes a kind of novel storage device and its control method, even in microtechnology, low supply voltage
Under environment, it can still improve the static noise margin of storage device simultaneously and write noise margin, to strengthen the storage of storage device
Efficiency.In addition, the present invention's is simple in construction, it is suitable for largely manufacturing in various circuits, therefore enjoys commercial reality and answer
With value.
It is worth noting that, all non-limit for the present invention of the component parameters such as voltages described above value, current value, resistance value
Condition processed.Designer can need to adjust these setting values according to different.The storage device and its control method of the present invention is not
It is only limitted to the state illustrated in Fig. 1-5.The present invention can only include any one or more of Fig. 1-5 one or more any embodiments
Item feature.In other words, and not all diagram feature must be implemented on simultaneously the present invention storage device and its control method work as
In.
Ordinal number in this description and in the claims, such as " first ", " second ", " the 3rd " etc., each other it
Between not precedence relationship sequentially, it is only used for sign and distinguishes two different elements with same name.
Present pre-ferred embodiments are the foregoing is only, so it is not limited to the scope of the present invention, any to be familiar with sheet
The personnel of item technology, without departing from the spirit and scope of the present invention, further can be improved and be changed on this basis, because
This protection scope of the present invention is defined when the scope defined by following claims.
Claims (10)
1. a kind of storage device, it is characterised in that including：
First phase inverter, with input and output end, the input of wherein first phase inverter is coupled to the second data section
Point, and the output end of first phase inverter is coupled to the first back end；
Second phase inverter, with input and output end, the input of wherein second phase inverter is coupled to first data
Node, and the output end of second phase inverter is coupled to second back end；
The first transistor, with control end, first end and the second end, wherein control end of the first transistor is used to receive
First control signal, the first end of the first transistor is coupled to first back end, and the first transistor this
Two ends are coupled to the first Inport And Outport Node；
Second transistor, with control end, first end and the second end, wherein control end of the second transistor is used to receive
Second control signal, the first end of the second transistor is coupled to first back end, and the second transistor this
Two ends are coupled to first Inport And Outport Node；
Third transistor, with control end, first end and the second end, wherein control end of the third transistor is used to receive
First control signal, the first end of the third transistor is coupled to the second Inport And Outport Node, and the third transistor
Second end is coupled to second back end；And
4th transistor, with control end, first end and the second end, wherein control end of the 4th transistor is used to receive
Second control signal, the first end of the 4th transistor is coupled to second Inport And Outport Node, and the 4th transistor
Second end be coupled to second back end.
2. storage device according to claim 1, it is characterised in that also include：
There is provided first control signal for first wordline；And
There is provided second control signal for second wordline.
3. storage device according to claim 1, it is characterised in that the first transistor, the second transistor, the 3rd
Transistor and the 4th transistor are all N-type mos field effect transistor.
4. storage device according to claim 1, it is characterised in that the first transistor, the second transistor, the 3rd
Transistor and the 4th transistor are used to lift the static noise margin of the storage device and write noise margin.
5. storage device according to claim 1, it is characterised in that first phase inverter includes：
5th transistor, with control end, first end and the second end, the control end of wherein the 5th transistor is coupled to this
Second back end, the first end of the 5th transistor is coupled to supply current potential, and the second end coupling of the 5th transistor
It is connected to first back end；And
6th transistor, with control end, first end and the second end, the control end of wherein the 6th transistor is coupled to this
Second back end, the first end of the 6th transistor is coupled to earthing potential, and the second end coupling of the 6th transistor
It is connected to first back end.
6. storage device according to claim 5, it is characterised in that the 5th transistor is that p-type metal oxide is partly led
Body field-effect transistor, and the 6th transistor is N-type mos field effect transistor.
7. storage device according to claim 5, it is characterised in that the transistor size of the storage device from large to small according to
Sequence is：The combination of both the first transistor and the second transistor, the 6th transistor, the second transistor, first crystalline substance
Body pipe, the 5th transistor.
8. storage device according to claim 5, it is characterised in that second phase inverter includes：
7th transistor, with control end, first end and the second end, the control end of wherein the 7th transistor is coupled to this
First back end, the first end of the 7th transistor is coupled to the supply current potential, and second end of the 7th transistor
It is coupled to second back end；And
8th transistor, with control end, first end and the second end, the control end of wherein the 8th transistor is coupled to this
First back end, the first end of the 8th transistor is coupled to the earthing potential, and second end of the 8th transistor
It is coupled to second back end.
9. storage device according to claim 8, it is characterised in that the 7th transistor is that p-type metal oxide is partly led
Body field-effect transistor, and the 8th transistor is N-type mos field effect transistor.
10. storage device according to claim 8, it is characterised in that the transistor size of the storage device is from large to small
It is sequentially：The third transistor and the combination of both the 4th transistors, the 8th transistor, the 4th transistor, the 3rd
Transistor, the 7th transistor.
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Address after: Room 301, 2537 Jinke Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: Shanghai Zhaoxin Semiconductor Co.,Ltd. Address before: Room 301, 2537 Jinke Road, Zhangjiang hi tech park, Pudong New Area, Shanghai 201203 Patentee before: VIA ALLIANCE SEMICONDUCTOR Co.,Ltd. |