CN107227442A - A kind of tungsten diamond machined transmissive target of embedded structure and preparation method thereof - Google Patents
A kind of tungsten diamond machined transmissive target of embedded structure and preparation method thereof Download PDFInfo
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- CN107227442A CN107227442A CN201710311739.8A CN201710311739A CN107227442A CN 107227442 A CN107227442 A CN 107227442A CN 201710311739 A CN201710311739 A CN 201710311739A CN 107227442 A CN107227442 A CN 107227442A
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- tungsten
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
- G01N23/046—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
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- General Health & Medical Sciences (AREA)
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Abstract
The present invention proposes a kind of tungsten diamond machined transmissive target of embedded structure and preparation method thereof.The tungsten diamond machined transmissive target utilizes helium ion microscope, especially with the multi-functional working ability of helium ion microscope superhigh precision, punched first on the diamond chip of hundreds of micron thickness, a diameter of several microns in hole, depth is several microns, then the deposition of tungsten is carried out inside these apertures, so as to prepare the tungsten diamond machined transmissive target of thermal diffusivity, high-quality embedded structure.The target disposal molding, not vulnerable to pollution, and have the advantages that X-ray exitance is big, thermal diffusivity is good, long lifespan under vacuum.The preparation method has the advantages that precision is high, easy to control, technique is simple.
Description
Technical field
The present invention relates to the critical component of industrial Micro-CT a kind of and its manufacture method, and in particular to a kind of industry
Micro-CT x-ray source tungsten-diamond machined transmissive target and preparation method thereof.
Background technology
Micro- computed tomography (Micro-CT), due to the spy with superelevation spatial resolution and noninvasive imaging
Point, optimal nondestructiving detecting means are known as by international lossless boundary.Tungsten-diamond machined transmissive target as Micro-CT critical component,
Its structure and its thermal diffusivity drastically influence the outgoing efficiency of Micro-CT X-ray.Current industry Micro-CT x-ray source
There are some documents and patent report with tungsten-diamond machined transmissive target structure and preparation method thereof, such as document " is based on magnetron sputtering Faxian
The preparation of micro- CTW-Al transmissions target and its performance study (2015,51 (11)：1416-1424)”；Patent " transmission-type x-ray target
With including the transmission-type x-ray target radioactive ray produce pipe (201410022341.9) ", " be used for transmission X-ray pipe thick target
" and a kind of " Industrial CT Machine X-ray tube transmission target and preparation method thereof (201180041159.2)
(201410652918.4) a kind of ", Industrial CT Machine X-ray tube of also Japanese Patent Publication transmission (JP2002343290A).
In these documents and patent, it was recently reported that the structure of transmission target is superposing type composite construction, its preparation method uses magnetic mostly
Control sputter coating method.But there is poor radiation, X-ray compared with the target of embedded structure, also and go out in the target of this structure
The low problem of rate is penetrated, its preparation method is more complicated.Therefore, the present invention propose a kind of new tungsten-diamond machined transmissive target structure and
Its preparation method, to increase the thermal diffusivity of Micro-CT tungsten-diamond machined transmissive target, so as to improve Micro-CT workability
Energy.
The content of the invention
The technology of the present invention solves problem：For problems of the prior art, there is provided a kind of tungsten-gold of embedded structure
Hard rock transmission target and preparation method thereof, the target disposal molding, not vulnerable to pollution, and with X-ray under vacuum
Exitance is big, thermal diffusivity is good, long lifespan the advantages of；Preparation method has the advantages that precision is high, easy to control, technique is simple.
The technology of the present invention solution：A kind of tungsten of embedded structure-diamond machined transmissive target, including diamond chip and tungsten
Plug；The tungsten plug is inlayed by the ne ion source of helium ion microscope after the punching of diamond chip center, then with depositional mode
It is embedded in diamond chip.
The diamond chip is disk shape, a diameter of 10-25mm, preferably a diameter of 15mm；Thickness is 100-200 μm,
It is preferred that diameter thickness is 100 μm.It is preferred that the shape and size of above-mentioned diamond chip are conducive to the welding of diamond and substrate, make gold
The sealing effectiveness of hard rock piece and vacuum cavity is more preferable.
The accelerating potential that the ne ion source of the helium ion microscope is used is 25-30kV, and line is 1.2-5.4pA, leads to
The reason for accelerating potential and line in the ne ion source for crossing helium ion microscope selected by a large amount of repetition tests, is in diamond chip
On can realize quick punching, while reducing damage of the ne ion beam to diamond chip.
The aperture of the punching is 1-10 μm, and depth is 3-10 μm, by largely so can quickly and easily make repeatedly
Standby tungsten plug.
A kind of preparation method of the tungsten of embedded structure-diamond machined transmissive target of the present invention, comprises the following steps：
1st, diamond chip is cleaned：Diamond chip is deoiled with acetone soak 1-2h, then cleaned with industrial EtOH Sonicate ripple
0.5-1h.Cleaning finish be placed in it is standby in drying basin；
2nd, pre-processed before diamond chip punching：Diamond chip is placed on inside helium ion microscope, treats that vacuum is evacuated to 10-3Pa
When following, using plasma carries out cleaning 1-2h, removes the oxide and pollutant on diamond chip surface；
3rd, punch：Using the ne ion source of helium ion microscope, accelerating potential is 25-30kV, and line is 1.2-5.4pA,
Punched in diamond chip center position, aperture is 1-10 μm, depth is 3-10 μm；
4th, tungsten plug is deposited：After diamond chip punching is finished, the depth of the deposition of tungsten, deposition height and hole is carried out in aperture
Degree is identical, that is, obtains tungsten-diamond machined transmissive target of embedded structure.
The advantage of the present invention compared with prior art is：It is photoetching and chemistry to prepare plug type structure common method at present
Etch, but these methods have complicated preparation technology, cycle length and the low shortcoming of efficiency.Tungsten-diamond of the present invention is saturating
Material of shooting at the target utilizes helium ion microscope, especially with the multi-functional working ability of helium ion microscope superhigh precision, first
Punched on the diamond chip of hundreds of micron thickness, a diameter of several microns in hole, depth is several microns, then at this
The deposition of tungsten is carried out inside a little apertures, so as to prepare tungsten-diamond machined transmissive target of thermal diffusivity, high-quality embedded structure
Material.Target disposal molding under vacuum, not vulnerable to pollution, and with X-ray exitance is big, thermal diffusivity is good, the life-span
Long the advantages of, preparation method has the advantages that precision is high, easy to control, technique is simple.Shown according to relevant test data, with being superimposed
The tungsten of formula composite construction-diamond machined transmissive target is compared, the X-ray outgoing of tungsten-diamond machined transmissive target of embedded structure
Rate, thermal diffusivity and life-span service behaviour substantially improve 15-20%.
Brief description of the drawings
Fig. 1 is the cross-sectional view of tungsten-diamond machined transmissive target of embedded structure proposed by the present invention.
Embodiment
Below in conjunction with the accompanying drawings and the present invention is discussed in detail in specific embodiment.But following embodiment is only limitted to explain this hair
Bright, protection scope of the present invention should include the full content of claim, be not limited only to the present embodiment.
Embodiment 1
The present invention proposes a kind of tungsten of embedded structure-diamond machined transmissive target, as shown in figure 1, including the He of diamond chip 1
Tungsten plug 2.Described diamond chip 1 is disk shape, and a diameter of 25mm, thickness is 200 μm；Described tungsten plug 2 is cylindrical type, directly
Footpath is 1 μm, is highly 3 μm, is embedded in diamond chip center position.Described tungsten plug 1 is embedded in Buddha's warrior attendant by depositional mode
In flag 2.
A kind of preparation method of the tungsten of embedded structure-diamond machined transmissive target of the present invention comprises the following steps：
1st, diamond chip is cleaned：Diamond chip is deoiled with acetone soak 1h, then 0.5h is cleaned with industrial EtOH Sonicate ripple.
Cleaning finish be placed in it is standby in drying basin；
2nd, pre-processed before diamond chip punching：Diamond chip is placed on inside helium ion microscope, treats that vacuum is evacuated to 10-3Pa
When following, using plasma carries out cleaning 1h, removes the oxide and pollutant on diamond chip surface；
3rd, punch：Using the ne ion source of helium ion microscope, accelerating potential is 25kV, and line is 1.2pA, in diamond
Piece center position is punched, and aperture is 1 μm, and depth is 3 μm；
4th, tungsten plug is deposited：After diamond chip punching is finished, the depth of the deposition of tungsten, deposition height and hole is carried out in aperture
Degree is identical, that is, obtains tungsten-diamond machined transmissive target of embedded structure.
Shown according to relevant test data, it is inserted compared with tungsten-diamond machined transmissive target of superposing type composite construction
X-ray exitance, thermal diffusivity and the life-span service behaviour of the tungsten of structure-diamond machined transmissive target improve 20%.
Embodiment 2
The present invention proposes a kind of tungsten of embedded structure-diamond machined transmissive target, as shown in figure 1, including the He of diamond chip 1
Tungsten plug 2.Described diamond chip 1 is disk shape, and a diameter of 10mm, thickness is 100 μm；Described tungsten plug 2 is cylindrical type, directly
Footpath is 10 μm, is highly 10 μm, is embedded in diamond chip center position.Described tungsten plug 1 is embedded in gold by depositional mode
In hard rock piece 2.
A kind of preparation method of the tungsten of embedded structure-diamond machined transmissive target of the present invention, comprises the following steps：
1st, diamond chip is cleaned：Diamond chip is deoiled with acetone soak 2h, then 1h is cleaned with industrial EtOH Sonicate ripple.Clearly
Wash finish be placed in it is standby in drying basin；
2nd, pre-processed before diamond chip punching：Diamond chip is placed on inside helium ion microscope, treats that vacuum is evacuated to 10-3Pa
When following, using plasma carries out cleaning 2h, removes the oxide and pollutant on diamond chip surface；
3rd, punch：Using the ne ion source of helium ion microscope, accelerating potential is 30kV, and line is 5.4pA, in diamond
Piece center position is punched, and aperture is 10 μm, and depth is 10 μm；
4th, tungsten plug is deposited：After diamond chip punching is finished, the depth of the deposition of tungsten, deposition height and hole is carried out in aperture
Degree is identical, that is, obtains tungsten-diamond machined transmissive target of embedded structure.
Shown according to relevant test data, it is inserted compared with tungsten-diamond machined transmissive target of superposing type composite construction
X-ray exitance, thermal diffusivity and the life-span service behaviour of the tungsten of structure-diamond machined transmissive target improve 15%.
Embodiment 3
The present invention proposes a kind of tungsten of embedded structure-diamond machined transmissive target, as shown in figure 1, including the He of diamond chip 1
Tungsten plug 2.Described diamond chip 1 is disk shape, and a diameter of 15mm, thickness is 150 μm；Described tungsten plug 2 is cylindrical type, directly
Footpath is 5 μm, is highly 8 μm, is embedded in diamond chip center position.Described tungsten plug 1 is embedded in Buddha's warrior attendant by depositional mode
In flag 2.
A kind of preparation method of the tungsten of embedded structure-diamond machined transmissive target of the present invention, comprises the following steps：
1st, diamond chip is cleaned：Diamond chip is deoiled with acetone soak 1.5h, then cleaned with industrial EtOH Sonicate ripple
0.75h.Cleaning finish be placed in it is standby in drying basin；
2nd, pre-processed before diamond chip punching：Diamond chip is placed on inside helium ion microscope, treats that vacuum is evacuated to 10-3Pa
When following, using plasma carries out cleaning 1.5h, removes the oxide and pollutant on diamond chip surface；
3rd, punch：Using the ne ion source of helium ion microscope, accelerating potential is 28kV, and line is 4pA, in diamond chip
Center position is punched, and aperture is 5 μm, and depth is 8 μm；
4th, tungsten plug is deposited：After diamond chip punching is finished, the depth of the deposition of tungsten, deposition height and hole is carried out in aperture
Degree is identical, that is, obtains tungsten-diamond machined transmissive target of embedded structure.
Shown according to relevant test data, it is inserted compared with tungsten-diamond machined transmissive target of superposing type composite construction
X-ray exitance, thermal diffusivity and the life-span service behaviour of the tungsten of structure-diamond machined transmissive target improve 18%.
It should be noted that according to the various embodiments described above of the present invention, those skilled in the art are can to realize this hair completely
The four corner of bright independent claims and appurtenance, implementation process and the same the various embodiments described above of method；And the present invention is not
Elaborate and partly belong to techniques well known.
It is described above, it is only part embodiment of the present invention, but protection scope of the present invention is not limited thereto, times
What those skilled in the art the invention discloses technical scope in, the change or replacement that can be readily occurred in should all be covered
Within protection scope of the present invention.
Claims (6)
1. a kind of tungsten of embedded structure-diamond machined transmissive target, it is characterised in that：Including diamond chip and tungsten plug；The tungsten
Plug is embedded in diamond by the ne ion source of helium ion microscope after the punching of diamond chip center, then with depositional mode
In piece.
2. a kind of tungsten of embedded structure according to claim 1-diamond machined transmissive target, it is characterised in that：The gold
Hard rock piece is disk shape, a diameter of 10-25mm, preferably a diameter of 15mm；Thickness is 100-200 μm, and preferred thickness is 100 μ
m。
3. a kind of tungsten of embedded structure according to claim 1-diamond machined transmissive target, it is characterised in that：The tungsten
Fill in for cylindrical type, a diameter of 1-10 μm, be highly 3-10 μm, be embedded in diamond chip center position.
4. a kind of tungsten of embedded structure according to claim 1-diamond machined transmissive target, it is characterised in that：The helium
The accelerating potential that the ne ion source of ion microscope is used is 25-30kV, and line is 1.2-5.4pA.
5. a kind of tungsten of embedded structure according to claim 1-diamond machined transmissive target, it is characterised in that：It is described to beat
The aperture in hole is 1-10 μm, and depth is 3-10 μm.
6. a kind of preparation method of the tungsten of embedded structure-diamond machined transmissive target, it is characterised in that：Comprise the following steps：
(1) diamond chip is cleaned：Diamond chip is deoiled with acetone soak 1-2h, then 0.5- is cleaned with industrial EtOH Sonicate ripple
1h, cleaning finish be placed in it is standby in drying basin；
(2) pre-processed before diamond chip punching：Diamond chip is placed on inside helium ion microscope, treats that vacuum is evacuated to 10-3Pa with
When lower, using plasma carries out cleaning 1-2h, removes the oxide and pollutant on diamond chip surface；
(3) punch：Using the ne ion source of helium ion microscope, accelerating potential is 25-30kV, and line is 1.2-5.4pA, in gold
Hard rock piece center position is punched, and aperture is 1-10 μm, and depth is 3-10 μm；
(4) tungsten plug is deposited：After diamond chip punching is finished, the depth phase of the deposition of tungsten, deposition height and hole is carried out in hole
Together, that is, tungsten-diamond machined transmissive target of embedded structure is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710311739.8A CN107227442A (en) | 2017-05-05 | 2017-05-05 | A kind of tungsten diamond machined transmissive target of embedded structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710311739.8A CN107227442A (en) | 2017-05-05 | 2017-05-05 | A kind of tungsten diamond machined transmissive target of embedded structure and preparation method thereof |
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ID=59933278
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110055540A (en) * | 2019-06-10 | 2019-07-26 | 中国科学院电工研究所 | The method and surface of micro-nano structure tungsten material and its application with micro-nano structure are prepared in tungsten material surface |
| US11289301B2 (en) | 2018-05-07 | 2022-03-29 | Washington University | Multi-pixel X-ray source with tungsten-diamond transmission target |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11289301B2 (en) | 2018-05-07 | 2022-03-29 | Washington University | Multi-pixel X-ray source with tungsten-diamond transmission target |
| CN110055540A (en) * | 2019-06-10 | 2019-07-26 | 中国科学院电工研究所 | The method and surface of micro-nano structure tungsten material and its application with micro-nano structure are prepared in tungsten material surface |
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