CN107219728B - Photoetching method for preventing silicon wafer from warping - Google Patents
Photoetching method for preventing silicon wafer from warping Download PDFInfo
- Publication number
- CN107219728B CN107219728B CN201710643122.6A CN201710643122A CN107219728B CN 107219728 B CN107219728 B CN 107219728B CN 201710643122 A CN201710643122 A CN 201710643122A CN 107219728 B CN107219728 B CN 107219728B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- glue
- photoresist
- baking
- homogenizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
Abstract
A photoetching method for preventing a silicon wafer from warping comprises the following steps of silicon wafer cleaning → surface glue homogenizing → front drying → exposure → development → drying → surface glue homogenizing on the front side of the silicon wafer → back glue homogenizing → film hardening → corrosion. The circle of photoresist is evenly coated on the periphery of the pattern surface after the development of the photoetching process, so that the circle of position coated with the photoresist on the periphery is not corroded, the edge of the silicon wafer is not provided with a small notch, the operation trouble caused by scraping and coating glass slurry is avoided, meanwhile, the edge of the silicon wafer is not corroded, the mechanical strength of the silicon wafer is increased to a certain degree, the influence of the glass shrinkage stress on the shape of the silicon wafer during the glass forming process is reduced by the surface of the circle which is not corroded, the silicon wafer is not obviously deformed after the glass forming, the surface is smooth, and fragments are not easily generated in the operation of the subsequent process.
Description
Technical Field
The invention relates to a photoetching method for preventing a silicon wafer from warping.
Background
A photoetching plate designed at the beginning of operation of a glass inner passivation process has a pattern in the whole illumination area, the whole surface of a silicon wafer after photoetching has the pattern, the whole surface of the silicon wafer after corrosion has a groove, the groove extends to the edge of the silicon wafer to form a plurality of small gaps, and when glass is coated, a scraper is easily clamped on the small gaps at the edge of the silicon wafer to cause silicon wafer fragments. And after the silicon wafer is subjected to blade coating of glass and glass forming, because the glass shrinkage in the groove enables the surface of the silicon wafer with the pattern to be subjected to stress caused by solidification shrinkage of the glass in the melting process of the glass powder during glass forming, the silicon wafer is easy to generate a warping phenomenon, the warping phenomenon brings great operation difficulty for subsequent photoetching and sand blasting, and silicon wafer fragments are easy to cause in the operation process.
Disclosure of Invention
In order to solve the technical problem, the invention provides a photoetching method for preventing a silicon wafer from warping.
The invention is realized by the following technical scheme.
The invention provides a photoetching method for preventing a silicon wafer from warping; comprises the following steps of (a) carrying out,
a, cleaning a silicon wafer to remove pollutants on the surface;
b, homogenizing the front glue, dripping the glue when the silicon wafer is static, and then accelerating to rotate and homogenize the glue;
c, pre-baking, namely baking for 25-30 min at 90-120 ℃ under a vacuum condition;
d, exposure, namely exposing the silicon wafer by using a projection exposure process;
e, developing, spraying a developing solution on the surface of the silicon wafer to dissolve the photoresist;
f, drying, and baking the silicon wafer for 4-7 min at 90-120 ℃;
g, homogenizing glue at the edge of the silicon wafer, and homogenizing glue at the edge of the front side of the silicon wafer;
h, back glue homogenizing, namely performing glue homogenizing on the back of the silicon wafer;
hardening the film, and baking the silicon wafer for 25-35 min at the temperature of 130-170 ℃;
j, corrosion, the deteriorated photoresist is corroded away by the corrosive liquid.
And the rotating acceleration in the step b is 2800-3200 rpm.
And g, the width of the glue homogenizing in the step g is 4-6 mm.
The preferable temperature in the step c is 100 ℃, and the baking time is 30 min.
The preferred temperature in step f is 100 ℃ and the time is 5 min.
The preferred temperature in step i is 150 ℃ and the time is 30 min.
The invention has the beneficial effects that: the circle of photoresist is evenly coated on the periphery of the pattern surface after the development of the photoetching process, so that the circle of position coated with the photoresist on the periphery is not corroded, the edge of the silicon wafer is not provided with a small notch, the operation trouble caused by scraping and coating glass slurry is avoided, meanwhile, the edge of the silicon wafer is not corroded, the mechanical strength of the silicon wafer is increased to a certain degree, the influence of the glass shrinkage stress on the shape of the silicon wafer during the glass forming process is reduced by the surface of the circle which is not corroded, the silicon wafer is not obviously deformed after the glass forming, the surface is smooth, and fragments are not easily generated in the operation of the subsequent process.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
A photoetching method for preventing a silicon wafer from warping; comprises the following steps of (a) carrying out,
a, cleaning a silicon wafer to remove pollutants on the surface; particles, organics, process residues, mobile ions in the contaminants.
b, homogenizing the front glue, dripping the glue when the silicon wafer is static, and then accelerating to rotate and homogenize the glue; the photoresist thickness is 0.4-0.9 μm at an acceleration of 2800-3200 rpm.
c, pre-baking, namely baking for 25-30 min at 90-120 ℃ under a vacuum condition; the adhesiveness is enhanced; releasing the stress in the photoresist film; preventing the photoresist from staining the equipment;
d, exposure, namely exposing the silicon wafer by using a projection exposure process; the projection exposure process is used for the process with the particle size less than or equal to 0.18 mu m. A 6 inch mask was used according to 4: 1, exposed to a ratio of 26X 33 mm. The advantages are that: the field of view of each exposure is increased; providing compensation for unevenness of the surface of the silicon wafer; the size uniformity of the whole silicon wafer is improved.
e, developing, spraying a developing solution on the surface of the silicon wafer to dissolve the photoresist; tetramethylammonium hydroxide having an equivalent concentration of 0.26 was used as the developer. Carboxylic acid is generated in the I-line photoresist exposure, alkali and acid in TMAH developing solution are neutralized to dissolve the exposed photoresist in the developing solution, but the unexposed photoresist has no influence; the phenolic resin contained in the Chemically Amplified Resist (CAR) exists in PHS form. The acid generated by the PAG in CAR will remove the protecting group (t-BOC) in PHS, thus making PHS rapidly soluble in TMAH developer. During the whole developing process, TMAH does not react with PHS.
f, drying, and baking the silicon wafer for 4-7 min at 90-120 ℃;
g, homogenizing glue at the edge of the silicon wafer, and homogenizing glue at the edge of the front side of the silicon wafer; the edge of the silicon wafer is protected from being corroded during corrosion, the mechanical strength of the silicon wafer is ensured, and the purpose of preventing the wafer from warping is achieved
h, back glue homogenizing, namely performing glue homogenizing on the back of the silicon wafer;
hardening the film, and baking the silicon wafer for 25-35 min at the temperature of 130-170 ℃; the positive photoresist resin is crosslinked to form a thin surface crust, so that the thermal stability of the photoresist is increased. The resolution reduction caused by the high temperature flow of the photoresist is reduced in the following plasma etching and ion implantation processes.
j, corroding, and removing the deteriorated photoresist by using corrosive liquid; the deteriorated photoresist is etched away (positive photoresist) by using an etchant, and the semiconductor device and the connected pattern thereof are shown on the surface of the wafer. Then, the wafer is etched by using another etching solution to form the semiconductor device and the circuit thereof.
And the rotating acceleration in the step b is 2800-3200 rpm.
And g, the width of the glue homogenizing in the step g is 4-6 mm.
The preferable temperature in the step c is 100 ℃, and the baking time is 30 min.
The preferred temperature in step f is 100 ℃ and the time is 5 min.
The preferred temperature in step i is 150 ℃ and the time is 30 min.
Claims (6)
1. A photoetching method for preventing a silicon wafer from warping is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
a) cleaning a silicon wafer to remove pollutants on the surface;
b) the front glue is homogenized, the glue is dripped when the silicon chip is static, and then the glue is homogenized by accelerated rotation;
c) pre-baking, baking for 25-30 min at 90-120 ℃ under a vacuum condition;
d) exposing, namely exposing the silicon wafer by using a projection exposure process;
e) developing, spraying a developing solution on the surface of the silicon wafer to dissolve the photoresist;
f) drying, namely baking the silicon wafer for 4-7 min at 90-120 ℃;
g) glue homogenizing is carried out on the edge of the silicon wafer, and glue homogenizing is carried out on the edge of the front side of the silicon wafer;
h) back glue homogenizing, namely homogenizing the back of the silicon wafer;
i) hardening, namely baking the silicon wafer for 25-35 min at the temperature of 130-170 ℃;
j) and (4) corroding the deteriorated photoresist by using the corrosive liquid.
2. The photolithography method for preventing warpage of a silicon wafer as claimed in claim 1, wherein: the rotating acceleration in the step b) is 2800-3200 rpm.
3. The photolithography method for preventing warpage of a silicon wafer as claimed in claim 1, wherein: the width of the glue homogenizing in the step g) is 4-6 mm.
4. The photolithography method for preventing warpage of a silicon wafer as claimed in claim 1, wherein: the preferable temperature in the step c) is 100 ℃, and the baking time is 30 min.
5. The photolithography method for preventing warpage of a silicon wafer as claimed in claim 1, wherein: the preferred temperature in step f) is 100 ℃ and the time is 5 min.
6. The photolithography method for preventing warpage of a silicon wafer as claimed in claim 1, wherein: the preferred temperature in step i) is 150 ℃ and the time is 30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710643122.6A CN107219728B (en) | 2017-07-31 | 2017-07-31 | Photoetching method for preventing silicon wafer from warping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710643122.6A CN107219728B (en) | 2017-07-31 | 2017-07-31 | Photoetching method for preventing silicon wafer from warping |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107219728A CN107219728A (en) | 2017-09-29 |
| CN107219728B true CN107219728B (en) | 2020-09-29 |
Family
ID=59954629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710643122.6A Active CN107219728B (en) | 2017-07-31 | 2017-07-31 | Photoetching method for preventing silicon wafer from warping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107219728B (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003098654A (en) * | 2001-09-25 | 2003-04-04 | Fuji Photo Film Co Ltd | Silver salt diffusion transfer type planographic printing original plate and method for making planographic printing plate |
| CN100424852C (en) * | 2007-04-25 | 2008-10-08 | 天津中环半导体股份有限公司 | Knife scraping method glass passivation process for silicon current rectifier |
| CN103794470B (en) * | 2013-11-22 | 2017-02-01 | 中航（重庆）微电子有限公司 | Silicon wafer front surface protection method |
| CN104716017B (en) * | 2013-12-13 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | Improve the method for crystal round fringes processing |
| CN105807575B (en) * | 2014-12-30 | 2017-08-25 | 上海微电子装备有限公司 | A kind of silicon chip edge protection device |
| CN104795335B (en) * | 2015-04-22 | 2017-06-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack |
| CN106292192B (en) * | 2015-05-24 | 2019-07-23 | 上海微电子装备（集团）股份有限公司 | Silicon chip edge protection device and litho machine |
| CN105280476B (en) * | 2015-09-17 | 2018-04-06 | 上海华力微电子有限公司 | A kind of method for improving crystal round fringes product yield |
| CN106935482A (en) * | 2015-12-30 | 2017-07-07 | 上海微电子装备（集团）股份有限公司 | A kind of guard method of silicon chip edge chip and photoetching exposure device |
-
2017
- 2017-07-31 CN CN201710643122.6A patent/CN107219728B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107219728A (en) | 2017-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI503636B (en) | Compositions and methods for removing organic substances | |
| EP0394354B1 (en) | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates | |
| JP2012522264A (en) | Compositions and methods for removing organic matter | |
| CN105573068B (en) | The reworking method of photoresist minimizing technology and photoetching process | |
| JP3654771B2 (en) | Semiconductor device manufacturing wafer rework method and semiconductor device manufacturing method | |
| CN107219728B (en) | Photoetching method for preventing silicon wafer from warping | |
| CN106876252B (en) | The lithographic method of semiconductor devices | |
| KR20090079242A (en) | Solution for treatment of resist substrate after development processing, and method for treatment of resist substrate using the same | |
| US4259369A (en) | Image hardening process | |
| TW202409125A (en) | Method of manufacturing high-defined pattern and method of manufacturing display device using the same | |
| JP2005505799A (en) | High heat resistant photoresist composition | |
| US7368229B2 (en) | Composite layer method for minimizing PED effect | |
| KR100883808B1 (en) | Selective imaging through dual photoresist layers | |
| JPH0364758A (en) | Method for peeling photoresist | |
| JPS58105151A (en) | Formation of photosensitive resin film | |
| JPH03261955A (en) | Developing method | |
| JP2001334465A (en) | Powder etching method and photoresist using therefor | |
| KR100401821B1 (en) | the thin film circuit formation method which uses a metal chemical compound reaction | |
| CN113376967A (en) | Development process of photoetching metal stripping process | |
| KR100613097B1 (en) | Method for manufacturing of the semiconductor device | |
| JPS60102735A (en) | Method of treating electron beam resist | |
| WO2020136012A1 (en) | Method of manufacturing an aperture device | |
| JP2007234984A (en) | Photo developing method | |
| Zelley | Dependence of plasma etch rate and uniformity on resist type and processing | |
| JPH086261A (en) | Developer for radiation sensitive resist |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |