CN107215890A - A kind of preparation method of cubic nanostructures indium oxide gas sensitive - Google Patents

A kind of preparation method of cubic nanostructures indium oxide gas sensitive Download PDF

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CN107215890A
CN107215890A CN201710504899.4A CN201710504899A CN107215890A CN 107215890 A CN107215890 A CN 107215890A CN 201710504899 A CN201710504899 A CN 201710504899A CN 107215890 A CN107215890 A CN 107215890A
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indium oxide
putriscine
preparation
mol
indium
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张苏
宋鹏
李嘉
王�琦
杨中喜
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University of Jinan
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00Compounds of gallium, indium or thallium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
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    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
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    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/38Particle morphology extending in three dimensions cube-like

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Abstract

The invention provides a kind of preparation method of cubic nanostructures indium oxide gas sensitive.The preparation method is specifically included:Using four trichloride hydrate indiums and Isosorbide-5-Nitrae butanediamine as raw material, through hydro-thermal reaction, calcination processing, the indium oxide cube with loose structure is obtained.This method simple production process, without using any surfactant, synthesis cost is low, experimental implementation is simple, gained indium oxide can be as gas sensitive, and it has good air-sensitive performance to front three amine gas, therefore can be used widely in front three amine gas context of detection.

Description

A kind of preparation method of cubic nanostructures indium oxide gas sensitive
Technical field
The present invention relates to a kind of preparation method of cubic nanostructures indium oxide gas sensitive, belong to advanced nano functional Material preparation process technical field.
Background technology
In recent years, food security enjoys people to pay attention to, and a large amount of TMAOs are contained in marine product, and they make in biology enzyme Easily be decomposed into formaldehyde and dimethylamine with lower, and be also easy to produce under bacterial action bad smell trimethylamine (Trimethylamine, TMA), they are all the precursor substances of carcinogenic substance nitroso-amines.Therefore, trimethylamine is as one of chemical index of fish freshness, It is related to the safety and health of mankind itself, its air-sensitive Journal of Sex Research is also increasingly taken seriously.Current trimethylamine gas sensor With TiO2, ZnO be main gas sensitive.Japanese Scientists Egashira etc. is with doped precious metal ruthenium, the TiO of indium2For material First TMA gas sensor has been made, but its response recovery time is longer(Makoto E, Yasuhiro S, Yuji T. Trimethylamine sensor based semiconductive metal oxides for detection of fish freshness [J]. Sens. Actuators B, 1990, 1: 108-112).On this basis, although Zhang Zhongxiao etc. contracts Short response recovery time, but its less stable(Zhang Zhongxiao, Meng Alan, Li Houfu, wait to measure the trimethylamine of seafood degree [(CH3)3N] metal oxide semiconductor sensing element development [J] sensor technologies, 1995, (3): 31-34).Therefore, Exploration has high sensitivity, shorter response recovery time, the good metal semiconductor of long-time stability with straightforward procedure synthesis Gas sensitive and study its air-sensitive performance very it is necessary therefore.
In2O3Be it is a kind of study the gas sensitive started late, because its operating temperature is relatively low, low-resistivity, sensitivity It is high and have the advantages that response to multiple gases and be increasingly subject to the concern of people.In2O3It is a kind of new Semiconductor gas sensors material Material, no matter its composition is pure phase, also or is doped with the compound of certain element or oxide, poisonous in air is detected to have Have in terms of evil gas and be widely applied very much, particularly to NO2、H2S、H2, CO and alcohol gas show preferable gas sensing property Energy.In gas detection process, be mainly concerned with gas diffusion into the surface and gas and Surface Oxygen between redox phase Interaction.Therefore, the gas sensitive material of high-specific surface area is very beneficial for realizing hypersensitivity of the material to reducibility gas. In order to improve identification function, except selecting good matrix material, it is modified outside by doping, compound and surface modification, if Meter and preparation are also the strategy attracted attention with bigger serface, the porous structure material of high activity site density.The present invention The indium oxide cube prepared has loose structure, with good permeability, can promote gas diffusion, is conducive to improving The utilization rate of gas sensitive.Further, since the restriction of experimental facilities and production technology, current people are for In2O3Nano material It is not also very deep to probe into probing into terms of especially air-sensitive performance.Researcher is urgently ground with the comprehensive angle of more system Study carefully In2O3The structure and morphology feature and functional character feature of nano material.
The content of the invention
It is an object of the present invention to overcome the deficiencies in the prior art, there is provided a kind of cubic nanostructures indium oxide air-sensitive The preparation method of material.Low with cost, simple production process, yield is high, the characteristics of non-environmental-pollution.Gained has porous knot The sensitivity of the indium oxide gas sensitive of structure is largely increased, available for fields such as gas sensors.Realize the object of the invention Technical scheme be:A kind of preparation method of cubic nanostructures indium oxide gas sensitive.The preparation method is specifically included:With Four trichloride hydrate indiums and Putriscine are raw material, through hydro-thermal reaction, calcination processing, obtain the indium oxide with loose structure Cube.This method simple production process, without using any surfactant, synthesis cost is low, and experimental implementation is simple, gained Indium oxide can be as gas sensitive, and it has good air-sensitive performance to front three amine gas, therefore in front three amine gas detection side Face can be used widely.Specific synthesis step is as follows:
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.02-0.05 mol/L, and the concentration of Putriscine is 0.02-0.05 mol/L, and controls four to be hydrated The mol ratio of indium trichloride and Putriscine is 1:(1-2);
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), at 180-200 DEG C At a temperature of, carry out hydro-thermal reaction 8-24 h, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and spend from Sub- water and ethanol are repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 400-550 DEG C, obtains the cube indium oxide powder with loose structure.
Brief description of the drawings
Fig. 1 is the XRD spectrum of cubic nanostructures indium oxide.
Fig. 2 schemes for the SEM of cubic nanostructures indium oxide.
Fig. 3 schemes for the TEM of cubic nanostructures indium oxide.
Fig. 4 is the N of cubic nanostructures indium oxide2Suction-desorption figure.
Fig. 5 is sensitivity curve of the cubic nanostructures indium oxide gas sensor to 10-1000ppm front three amine gas Figure.
Fig. 6 is the response recovery curve figure of cubic nanostructures indium oxide gas sensor under optimum operating voltage.
Embodiment
Embodiments of the invention are elaborated below, the present embodiment is carried out lower premised on technical solution of the present invention Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following implementations Example.
Embodiment 1
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.025 mol/L, and the concentration of Putriscine is 0.025 mol/L, and controls four trichloride hydrate indiums Mol ratio with Putriscine is 1:1;
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), in 180 DEG C of temperature Under, carry out the h of hydro-thermal reaction 8, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and with deionized water with Ethanol is repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 500 DEG C, obtains the cube indium oxide powder with loose structure.
Embodiment 2
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.025 mol/L, and the concentration of Putriscine is 0.025 mol/L, and controls four trichloride hydrate indiums Mol ratio with Putriscine is 1:1;
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), in 180 DEG C of temperature Under, carry out the h of hydro-thermal reaction 12, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and with deionized water with Ethanol is repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 500 DEG C, obtains the cube indium oxide powder with loose structure.
Embodiment 3
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.025 mol/L, and the concentration of Putriscine is 0.025 mol/L, and controls four trichloride hydrate indiums Mol ratio with Putriscine is 1:1;
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), in 180 DEG C of temperature Under, carry out the h of hydro-thermal reaction 20, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and with deionized water with Ethanol is repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 500 DEG C, obtains the cube indium oxide powder with loose structure.
Embodiment 4
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.025 mol/L, and the concentration of Putriscine is 0.05 mol/L, and four trichloride hydrate indiums of control with The mol ratio of Putriscine is 1:2;
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), in 200 DEG C of temperature Under, carry out the h of hydro-thermal reaction 12, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and with deionized water with Ethanol is repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 500 DEG C, obtains the cube indium oxide powder with loose structure.
Embodiment 5
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.025 mol/L, and the concentration of Putriscine is 0.025 mol/L, and controls four trichloride hydrate indiums Mol ratio with Putriscine is 1:1;
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), in 200 DEG C of temperature Under, carry out the h of hydro-thermal reaction 24, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and with deionized water with Ethanol is repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 500 DEG C, obtains the cube indium oxide powder with loose structure.

Claims (1)

1. a kind of preparation method of cubic nanostructures indium oxide gas sensitive, specific synthesis step is as follows:
(1)A certain amount of four trichloride hydrates indium, Putriscine are weighed, is dissolved in 40 mL deionized waters, wherein four hydrations three The concentration of inidum chloride is 0.02-0.05 mol/L, and the concentration of Putriscine is 0.02-0.05 mol/L, and controls four to be hydrated The mol ratio of indium trichloride and Putriscine is 1:(1-2);
(2)By step(1)Middle gained mixed solution is moved in the hydrothermal reaction kettle that liner is polytetrafluoroethylene (PTFE), at 180-200 DEG C At a temperature of, carry out hydro-thermal reaction 8-24 h, then by after hydro-thermal reaction product utilization centrifuge carry out separation of solid and liquid, and spend from Sub- water and ethanol are repeatedly washed to gained solid product;
(3)By step(2)Gained solid product is positioned in drying box, 60 DEG C of dryings, is subsequently placed in alumina crucible and is put into horse Not stove, is heat-treated 3 h at 400-550 DEG C, obtains the cube indium oxide powder with loose structure.
CN201710504899.4A 2017-06-28 2017-06-28 A kind of preparation method of cubic nanostructures indium oxide gas sensitive Pending CN107215890A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110386620A (en) * 2019-08-01 2019-10-29 刘骞 Indium oxide gas sensitive and preparation method and application for ppb grades of ethyl alcohol detections
CN111735857A (en) * 2020-07-07 2020-10-02 华准科技(绍兴)有限公司 In supporting Ru2O3Nano material and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102963922A (en) * 2012-10-26 2013-03-13 河南圣玛斯光电科技有限公司 Hydrothermal synthesis method for indium oxide with cubic crystal structure
CN106006719A (en) * 2016-07-20 2016-10-12 济南大学 Method for preparing indium oxide micro-spheres which comprise nanometer particles and are of classification structures
CN106186048A (en) * 2016-07-20 2016-12-07 济南大学 A kind of preparation method of the hierarchy Indium sesquioxide. microsphere of cube composition
CN107215889A (en) * 2017-06-28 2017-09-29 济南大学 A kind of preparation method of loose structure indium oxide cube gas sensitive

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102963922A (en) * 2012-10-26 2013-03-13 河南圣玛斯光电科技有限公司 Hydrothermal synthesis method for indium oxide with cubic crystal structure
CN106006719A (en) * 2016-07-20 2016-10-12 济南大学 Method for preparing indium oxide micro-spheres which comprise nanometer particles and are of classification structures
CN106186048A (en) * 2016-07-20 2016-12-07 济南大学 A kind of preparation method of the hierarchy Indium sesquioxide. microsphere of cube composition
CN107215889A (en) * 2017-06-28 2017-09-29 济南大学 A kind of preparation method of loose structure indium oxide cube gas sensitive

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
刘继江: "氧化铟材料的形貌可控制备及其乙醇气敏性能研究", 《中国博士学位论文全文数据库》 *
王彬: "不同晶型氧化铟纳米材料的制备及其气敏性能研究", 《中国优秀硕士学位论文全文数据库》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110386620A (en) * 2019-08-01 2019-10-29 刘骞 Indium oxide gas sensitive and preparation method and application for ppb grades of ethyl alcohol detections
CN111735857A (en) * 2020-07-07 2020-10-02 华准科技(绍兴)有限公司 In supporting Ru2O3Nano material and preparation method and application thereof

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