CN107195590A - A kind of novel transistor - Google Patents

A kind of novel transistor Download PDF

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Publication number
CN107195590A
CN107195590A CN201710587909.5A CN201710587909A CN107195590A CN 107195590 A CN107195590 A CN 107195590A CN 201710587909 A CN201710587909 A CN 201710587909A CN 107195590 A CN107195590 A CN 107195590A
Authority
CN
China
Prior art keywords
upper cover
cover plate
colelctor electrode
plate
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710587909.5A
Other languages
Chinese (zh)
Inventor
田艺儿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201710587909.5A priority Critical patent/CN107195590A/en
Publication of CN107195590A publication Critical patent/CN107195590A/en
Withdrawn legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container

Abstract

The invention discloses a kind of novel transistor, including emitter stage, base stage, colelctor electrode, reinforcing pipe, groove, fixing bolt, upper cover plate, stopper slot, connection sheet, fixing hole, lower cover, expelling plate, base and collector plate, the preceding surface of the upper cover plate opens up fluted, embedded on the preceding surface of the groove to be provided with fixing bolt, the reinforcing pipe is arranged on the bottom of upper cover plate.The present invention is scientific and reasonable for structure, it is safe and convenient to use, there is provided reinforcing pipe, the junction of colelctor electrode and upper cover plate can be prevented to be damaged, the service life of colelctor electrode can be improved, there is provided fixing bolt, can be in order to the installation and removal of upper cover plate and lower cover, can be in order to the care and maintenance of emitter stage, base stage and colelctor electrode, and then the efficiency of transmission of emitter and collector can be improved, the design is simple in construction, it is easy for installation, comprehensive optimization has been done to overall structure, the volume of transistor has been reduced, improves performance.

Description

A kind of novel transistor
Technical field
The present invention relates to transistor arts, specially a kind of novel transistor.
Background technology
Transistor refers to all single elements based on semi-conducting material, including various semi-conducting materials be made two Pole pipe, triode, FET, controllable silicon etc., transistor refer to transistor more sometimes.
But transistor in the market is not only complicated, and function is single, is not provided with reinforcing pipe, it is impossible to anti- Only the junction of colelctor electrode and upper cover plate is damaged, it is impossible to improve the service life of colelctor electrode, is not provided with fixing bolt, no The installation and removal of upper cover plate and lower cover can be easy to, it is impossible to be easy to the care and maintenance of emitter stage, base stage and colelctor electrode, it is impossible to Improve efficiency of transmission.
The content of the invention
The present invention provides a kind of novel transistor, and being not provided with of can effectively solving to propose in above-mentioned background technology is reinforced Pipe, it is impossible to prevent the junction of colelctor electrode and upper cover plate to be damaged, it is impossible to improve the service life of colelctor electrode, is not provided with solid Determine bolt, it is impossible to be easy to the installation and removal of upper cover plate and lower cover, it is impossible to be easy to emitter stage, base stage and colelctor electrode maintenance and Maintenance, it is impossible to the problem of improving efficiency of transmission.
To achieve the above object, the present invention provides following technical scheme:A kind of novel transistor, including emitter stage, base stage, Colelctor electrode, reinforcing pipe, groove, fixing bolt, upper cover plate, stopper slot, connection sheet, fixing hole, lower cover, expelling plate, base, collection Electroplax, collector junction and emitter junction, the preceding surface of the upper cover plate open up fluted, and are provided with lower cover on rear side of upper cover plate, Embedded on the preceding surface of the groove to be provided with fixing bolt, the reinforcing pipe is arranged on the bottom of upper cover plate, and reinforcing pipe Bottom is provided through colelctor electrode, and the side of the colelctor electrode is provided with base stage, and the side of the base stage is provided with emitter stage, institute The top for stating lower cover is provided with connection sheet, and the preceding surface of the connection sheet offers fixing hole, and the two side of connection sheet is equal Offer to be provided with the apical position of emitter stage inside stopper slot, the upper cover plate inside expelling plate, and upper cover plate and lean on Base is provided with the apical position of nearly base stage, the junction of the expelling plate and base is provided with emitter junction, the upper cover plate Internal to be provided with collector plate at the apical position of colelctor electrode, the junction of the base and collector plate is provided with collector junction.
It is preferred that, the emitter stage, base stage and colelctor electrode are a kind of component of germanium silicon carbon material.
It is preferred that, the colelctor electrode is fixedly connected with collector plate by reinforcing pipe.
It is preferred that, the upper cover plate is fixedly connected with lower cover by fixing bolt.
It is preferred that, the quantity of the fixing bolt is two.
Compared with prior art, beneficial effects of the present invention:The present invention is scientific and reasonable for structure, safe and convenient to use, sets Reinforcing pipe, can prevent the junction of colelctor electrode and upper cover plate to be damaged, can improve the service life of colelctor electrode, set Fixing bolt, can in order to the installation and removal of upper cover plate and lower cover, can be in order to the dimension of emitter stage, base stage and colelctor electrode Shield and maintenance, and then the efficiency of transmission of emitter and collector can be improved, the design is simple in construction, easy for installation, to entirety Structure has done comprehensive optimization, reduces the volume of transistor, improves performance.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, the reality with the present invention Applying example is used to explain the present invention together, is not construed as limiting the invention.
In the accompanying drawings:
Fig. 1 is the structural representation of the present invention;
Fig. 2 is the structural representation of lower cover of the present invention;
Fig. 3 is the internal structure schematic diagram of upper cover plate of the present invention;
Label in figure:1st, emitter stage;2nd, base stage;3rd, colelctor electrode;4th, reinforcing pipe;5th, groove;6th, fixing screws;7th, upper cover plate;8、 Stopper slot;9th, connection sheet;10th, fixing hole;11st, lower cover;12nd, expelling plate;13rd, base;14th, collector plate;15th, collector junction;16、 Emitter junction.
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that preferred reality described herein Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment:As Figure 1-3, a kind of technical scheme of present invention offer, a kind of novel transistor, including emitter stage 1, Base stage 2, colelctor electrode 3, reinforcing pipe 4, groove 5, fixing bolt 6, upper cover plate 7, stopper slot 8, connection sheet 9, fixing hole 10, lower cover 11st, expelling plate 12, base 13, collector plate 14, collector junction 15 and emitter junction 16, the preceding surface of upper cover plate 7 open up fluted 5, and The rear side of upper cover plate 7 is provided with insertion on lower cover 11, the preceding surface of groove 5 and is provided with fixing bolt 6, and reinforcing pipe 4 is arranged on The bottom of upper cover plate 7, and the bottom of reinforcing pipe 4 is provided through colelctor electrode 3, the side of colelctor electrode 3 is provided with base stage 2, base stage 2 Side be provided with emitter stage 1, the top of lower cover 11 is provided with connection sheet 9, and the preceding surface of connection sheet 9 offers fixing hole 10, and the two side of connection sheet 9 offers stopper slot 8, the inside of upper cover plate 7 is provided with the apical position of emitter stage 1 Expelling plate 12, and the inside of upper cover plate 7 is provided with base 13, the company of expelling plate 12 and base 13 at the apical position of base stage 2 The place of connecing is provided with emitter junction 16, and the inside of upper cover plate 7 is provided with collector plate 14 at the apical position of colelctor electrode 3, base 13 with The junction of collector plate 14 is provided with collector junction 15.
In order to improve in transmission performance, the present embodiment, it is preferred that emitter stage 1, base stage 2 and colelctor electrode 3 are a kind of germanium silicon The component of carbon materials matter.
In order to prevent the junction of colelctor electrode 3 and upper cover plate 7 to be damaged, in the present embodiment, it is preferred that colelctor electrode 3 with Collector plate 14 is fixedly connected by reinforcing pipe 4.
For the ease of the installation and removal of upper cover plate 7 and lower cover 11, in the present embodiment, it is preferred that upper cover plate 7 and lower cover Plate 11 is fixedly connected by fixing bolt 6.
In order that upper cover plate 7 is fixed with lower cover 11, in the present embodiment, it is preferred that the quantity of fixing bolt 6 is two.
The present invention operation principle and use flow:Reinforcing pipe 4 is arranged on the bottom of upper cover plate 7, can prevent colelctor electrode 3 It is damaged with the junction of upper cover plate 7, insertion on the service life of colelctor electrode 3, the preceding surface of groove 5 can be improved and be provided with Fixing bolt 6, can be in order to the installation and removal of upper cover plate 7 and lower cover 11, can be in order to emitter stage 1, base stage 2 and colelctor electrode 3 care and maintenance, and then the efficiency of transmission of emitter stage 1 and colelctor electrode 3 can be improved, the design is simple in construction, easy for installation, Comprehensive optimization has been done to overall structure, the volume of transistor has been reduced, improves performance.
Finally it should be noted that:The preferred embodiment of the present invention is the foregoing is only, is not intended to limit the invention, to the greatest extent The present invention is described in detail with reference to the foregoing embodiments for pipe, for those skilled in the art, and it still can be with Technical scheme described in foregoing embodiments is modified, or equivalent substitution is carried out to which part technical characteristic.It is all Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc., should be included in the guarantor of the present invention Within the scope of shield.

Claims (5)

1. a kind of novel transistor, including emitter stage(1), base stage(2), colelctor electrode(3), reinforcing pipe(4), groove(5), fixed spiral shell Bolt(6), upper cover plate(7), stopper slot(8), connection sheet(9), fixing hole(10), lower cover(11), expelling plate(12), base (13), collector plate(14), collector junction(15)And emitter junction(16), it is characterised in that:The upper cover plate(7)Preceding surface offer Groove(5), and upper cover plate(7)Rear side be provided with lower cover(11), the groove(5)Preceding surface on insertion be provided with fixation Bolt(6), the reinforcing pipe(4)Installed in upper cover plate(7)Bottom, and reinforcing pipe(4)Bottom be provided through colelctor electrode (3), the colelctor electrode(3)Side be provided with base stage(2), the base stage(2)Side be provided with emitter stage(1), it is described under Cover plate(11)Top be provided with connection sheet(9), the connection sheet(9)Preceding surface offer fixing hole(10), and connection sheet (9)Two side offer stopper slot(8), the upper cover plate(7)Internal close emitter stage(1)Apical position at be provided with Expelling plate(12), and upper cover plate(7)Internal close base stage(2)Apical position at be provided with base(13), the expelling plate (12)With base(13)Junction be provided with emitter junction(16), the upper cover plate(7)Internal close colelctor electrode(3)Top position The place of putting is provided with collector plate(14), the base(13)With collector plate(14)Junction be provided with collector junction(15).
2. a kind of novel transistor according to claim 1, it is characterised in that:The emitter stage(1), base stage(2)And collection Electrode(3)It is a kind of component of germanium silicon carbon material.
3. a kind of novel transistor according to claim 1, it is characterised in that:The colelctor electrode(3)With collector plate(14) Pass through reinforcing pipe(4)It is fixedly connected.
4. a kind of novel transistor according to claim 1, it is characterised in that:The upper cover plate(7)With lower cover(11) Pass through fixing bolt(6)It is fixedly connected.
5. a kind of novel transistor according to claim 1, it is characterised in that:The fixing bolt(6)Quantity be two It is individual.
CN201710587909.5A 2017-07-19 2017-07-19 A kind of novel transistor Withdrawn CN107195590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710587909.5A CN107195590A (en) 2017-07-19 2017-07-19 A kind of novel transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710587909.5A CN107195590A (en) 2017-07-19 2017-07-19 A kind of novel transistor

Publications (1)

Publication Number Publication Date
CN107195590A true CN107195590A (en) 2017-09-22

Family

ID=59883753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710587909.5A Withdrawn CN107195590A (en) 2017-07-19 2017-07-19 A kind of novel transistor

Country Status (1)

Country Link
CN (1) CN107195590A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273415A (en) * 2018-08-05 2019-01-25 温州职业技术学院 A kind of transistor-packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273415A (en) * 2018-08-05 2019-01-25 温州职业技术学院 A kind of transistor-packaging structure
CN109273415B (en) * 2018-08-05 2020-03-10 温州职业技术学院 Transistor packaging structure

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PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20170922

WW01 Invention patent application withdrawn after publication