CN107195586A - A kind of GaN horizontal nanowires electronic device preparation method - Google Patents
A kind of GaN horizontal nanowires electronic device preparation method Download PDFInfo
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- CN107195586A CN107195586A CN201710287542.5A CN201710287542A CN107195586A CN 107195586 A CN107195586 A CN 107195586A CN 201710287542 A CN201710287542 A CN 201710287542A CN 107195586 A CN107195586 A CN 107195586A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010020741 Hyperpyrexia Diseases 0.000 description 1
- 241000549556 Nanos Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012742 biochemical analysis Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
Abstract
The invention discloses a kind of GaN horizontal nanowires electronic device preparation method, directly in the horizontal GaN nano wire of Grown, and by photoetching process prepare square-shaped electrode array, use PECVD device deposit thickness for 2250 SiO2；There is a SiO2 nano wire deposited atop metal platinum in deposition by FIB techniques, and draw metal platinum and be connected to another square-shaped electrode.The present invention passes through the horizontal GaN nano wire of direct growth on substrate, it is strong with substrate caking property, nanowire-junction structure UV detector and nanometer wire field effect tube are integrated simultaneously, nano wire need not be shifted, not only strengthen device stability, fault in material is reduced simultaneously, device size is reduced, and improves application.The present invention can be widely applied to microelectronic as a kind of GaN horizontal nanowires electronic device preparation method.
Description
Technical field
The present invention relates to microelectronic, especially a kind of GaN horizontal nanowires electronic device preparation method.
Background technology
Field-effect transistor is the basic device of microelectronic, and metal oxide semiconductor field effect tube is that one kind can be with
It is widely used in analog circuit and the field-effect transistor of digital circuit.The work of chip is improved by reducing the size of transistor
Speed and integrated level, the chip power-consumption density that reduces are always that microelectronics industry develops pursued target.In the past few decades,
Microelectronics industry development follows Moore's Law always.Currently, the physical gate length of field-effect transistor is close to more than ten nanometers, and grid are situated between
Matter also only have several oxygen atom thickness, improved by reducing the size of conventional field effect transistor performance faced some be stranded
Difficulty, this, which is primarily due to short-channel effect and grid leakage current under small size, changes the switch performance of transistor.
Ultraviolet detection technology is widely used in terms of military and civilian.Militarily, missile warning, guidance, ultraviolet logical
There is the demand of ultraviolet detection in terms of news, biochemical analysis.On civilian, such as naked light detection, biological medicine analysis, ozone prison
Survey, offshore oil prison, solar illumination monitoring, public security investigation etc..All the time, used highly sensitive ultraviolet detection to ultraviolet sensitivity more
Photomultiplier and similar vacuum device.Ultraviolet enhancement silicon photoelectric diode is the representative of solid probe.With respect to solid
For detector, there is the shortcomings of volume is big, operating voltage is high in vacuum device；And silicon device the characteristics of have visible light-responded
Shortcoming can be become in some ultra violet applications.
The content of the invention
In order to solve the above-mentioned technical problem, the purpose of the present invention is：A kind of low cost, high-performance GaN horizontal nanos are provided
Line electronic device preparation method.
The technical solution adopted in the present invention is：A kind of GaN horizontal nanowires electronic device preparation method, includes following
Step：
Put substrate into 4:Deionized water rinsing is used after soaking 4min, taking-up in 1 sulfuric acid, hydrogen peroxide；Place the substrate into acetone
80 DEG C of 10 min of ultrasonic cleaning in solution, then place into ethanol solution 80 DEG C of 10 min of ultrasonic cleaning, spent after taking-up from
Sub- water is rinsed；
Using with vacuum coating equipment metallic film is plated in substrate surface；
In HVPE growth apparatus, there is the Grown horizontal nanowire of catalyst in evaporation by VLS methods；
The substrate that growth has horizontal GaN nano wire is put into chloroazotic acid and soaks 30s；
There is photoetching 100* on the substrate of horizontal GaN nano wire in growth by spin coating, front baking, rear baking, exposure, developing procedure
100mm square-shaped electrode array；
Using vacuum coating equipment on the good substrate of photoetching metal film；
Use PECVD device deposit thickness for 2250 SiO2；
There is SiO in deposition by FIB techniques2A nano wire deposited atop metal platinum, and draw metal platinum be connected to it is square
Electrode.
Further, the substrate is Sapphire Substrate.
Further, using with vacuum coating equipment, when substrate surface plates metallic film, the metallic film is thickness
2nm/2nm Ni/Au.
Further, in HVPE growth apparatus, there is the Grown horizontal nano of catalyst in evaporation by VLS methods
Line, growth conditions is：Temperature is 850 DEG C, and GaCl flows are 10sccm, NH3Flow is 100sccm, and the time is 4 min.
Further, using vacuum coating equipment on the good substrate of photoetching during metal film, the metallic film is thickness
Spend 50nm/300nm Ni/Au.
Further, use PECVD device deposit thickness for 2250 SiO2Condition be：Temperature is 300 DEG C, and pressure is
600mTorr, N2O flows are 1000sccm, SiH4Flow is 500sccm, and He flows are 25sccm, N2Flow is 475sccm.
The beneficial effects of the invention are as follows：By the horizontal GaN nano wire of direct growth on substrate, itself and substrate caking property
By force, while nanowire-junction structure UV detector and nanometer wire field effect tube are integrated, without shifting nano wire, it is to avoid receive
Rice noodles in transfer process breakage or fracture, not only strengthen device stability, while reduce fault in material, reduce device
Size, improves application.
Brief description of the drawings
Fig. 1 is the inventive method flow chart of steps；
Fig. 2 prepares first stage schematic diagram for the present invention；
Fig. 3 prepares second stage schematic diagram for the present invention；
Fig. 4 prepares phase III schematic diagram for the present invention；
Fig. 5 prepares fourth stage schematic diagram for the present invention.
Embodiment
The embodiment to the present invention is described further below in conjunction with the accompanying drawings：
A kind of reference picture 1, GaN horizontal nanowires electronic device preparation method, includes following steps：
Put substrate into 4:Deionized water rinsing is used after soaking 4min, taking-up in 1 sulfuric acid, hydrogen peroxide；Place the substrate into acetone
80 DEG C of 10 min of ultrasonic cleaning in solution, then place into ethanol solution 80 DEG C of 10 min of ultrasonic cleaning, spent after taking-up from
Sub- water is rinsed；
Using with vacuum coating equipment metallic film is plated in substrate surface；
In HVPE growth apparatus, there is the Grown horizontal nanowire of catalyst in evaporation by VLS methods；
The substrate that growth has horizontal GaN nano wire is put into chloroazotic acid and soaks 30s；
There is photoetching 100* on the substrate of horizontal GaN nano wire in growth by spin coating, front baking, rear baking, exposure, developing procedure
100mm square-shaped electrode array；
Using vacuum coating equipment on the good substrate of photoetching metal film；
Use PECVD device deposit thickness for 2250 SiO2；
There is SiO in deposition by FIB techniques2A nano wire deposited atop metal platinum, and draw metal platinum be connected to it is square
Electrode.
It is further used as preferred embodiment, the substrate is Sapphire Substrate.
Be further used as preferred embodiment, using with vacuum coating equipment when substrate surface plates metallic film, institute
State the Ni/Au that metallic film is thickness 2nm/2nm.
It is further used as preferred embodiment, in HVPE growth apparatus, has catalyst in evaporation by VLS methods
Grown horizontal nanowire, growth conditions is：Temperature is 850 DEG C, and GaCl flows are 10sccm, NH3Flow is
100sccm, the time is 4 min.
Be further used as preferred embodiment, using vacuum coating equipment on the good substrate of photoetching metal film
When, the metallic film is thickness 50nm/300nm Ni/Au.
Be further used as preferred embodiment, use PECVD device deposit thickness for 2250 SiO2Condition be：
Temperature is 300 DEG C, and pressure is 600mTorr, N2O flows are 1000sccm, SiH4Flow is 500sccm, and He flows are 25sccm,
N2Flow is 475sccm.
The specific embodiment of the present invention can refer to Fig. 2-4：
Put substrate into 4:Deionized water rinsing is used after soaking 4min, taking-up in 1 sulfuric acid, hydrogen peroxide；Place the substrate into acetone
80 DEG C of 10 min of ultrasonic cleaning in solution, then place into ethanol solution 80 DEG C of 10 min of ultrasonic cleaning, spent after taking-up from
Sub- water is rinsed；
Using vacuum coating equipment metallic film is plated in substrate surface；
In hydride gas-phase epitaxy（HVPE, Hydride Vapor Phase Epitaxy）In growth apparatus, pass through VLS
（vapor liquid solid）Method has the Grown horizontal nanowire of Au/Ni catalyst in evaporation；
The substrate 1 that growth has horizontal GaN nano wire 2 is put into chloroazotic acid and soaks 30s, remaining metal, its structure such as Fig. 2 is removed
It is shown；
There is photoetching 100* on the substrate of horizontal GaN nano wire in growth by spin coating, front baking, rear baking, exposure, developing procedure
100mm square-shaped electrode array.In specific embodiment as shown in Figure 2, include two nano wires 21,22, square-shaped electrode battle array
Two square-shaped electrodes in row set the two ends for being connected to two nano wires respectively, as shown in figure 3, horizontal GaN nano wire two ends
Respectively there is a square-shaped electrode 3,4.
Using vacuum coating equipment on the good substrate of photoetching metal film；
Use PECVD device deposit thickness for 2250 SiO2, SiO2Layer 6 is as shown in Figure 4；
As shown in figure 5, passing through focused ion beam（FIB, Focused Ion Beam）Technique has SiO in deposition2A nanometer
Nano wire 22 in line, reference picture 2, its deposited atop metal platinum 7, and draw metal platinum 7 and be connected to another square-shaped electrode, that is, scheme
Square-shaped electrode 5 shown in 3, as the grid of nanometer wire field effect tube, the square-shaped electrode of the two ends connection of the nano wire is made respectively
For the drain-source electrodes of nanometer wire field effect tube；And nano wire 21, its conduct in another nano wire as shown in Figure 5, reference picture 2
The part of nano wire ultraviolet detector.In specific preparation process, different structures can be used for different devices, specifically
Depending on into square-shaped electrode array, the connected mode of each square-shaped electrode can be according to actual conditions.
The characteristics of one-dimensional nanostructured prepared by the inventive method has big specific surface area, mono-crystalline structures, thus it is one-dimensional
Nanostructured turns into the construction unit of construction novel nano photoelectric device.The One-Dimensional GaN nano wire of high-crystal quality has high carry
Flow transport factor, hyperpyrexia and chemical stability.Relative to membrane structure, one-dimensional nano structure has less defect, material matter
Amount is more preferable, and has antireflection effect to light, therefore the ultraviolet detector and FET that One-Dimensional GaN nano material is made
Performance is more superior；Simultaneously as in preparation process, GaN is grown by VLS methods using hydride gas phase epitaxial growth equipment
Nanometer line rate reaches 1um/min, and growth rate is far above expensive devices such as MOCVD, MBE, so as to reduce cost.
Above is the preferable implementation to the present invention is illustrated, but the invention is not limited to the implementation
Example, those skilled in the art can also make a variety of equivalents or replace on the premise of without prejudice to spirit of the invention
Change, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (6)
1. a kind of GaN horizontal nanowires electronic device preparation method, it is characterised in that include following steps：
Put substrate into 4:Deionized water rinsing is used after soaking 4min, taking-up in 1 sulfuric acid, hydrogen peroxide；Place the substrate into acetone
80 DEG C of 10 min of ultrasonic cleaning in solution, then place into ethanol solution 80 DEG C of 10 min of ultrasonic cleaning, spent after taking-up from
Sub- water is rinsed；
Using with vacuum coating equipment metallic film is plated in substrate surface；
In HVPE growth apparatus, there is the Grown horizontal nanowire of catalyst in evaporation by VLS methods；
The substrate that growth has horizontal GaN nano wire is put into chloroazotic acid and soaks 30s；
There is photoetching 100* on the substrate of horizontal GaN nano wire in growth by spin coating, front baking, rear baking, exposure, developing procedure
100mm square-shaped electrode array；
Using vacuum coating equipment on the good substrate of photoetching metal film；
Use PECVD device deposit thickness for 2250 SiO2；
There is SiO in deposition by FIB techniques2A nano wire deposited atop metal platinum, and draw metal platinum and be connected to square electric
Pole.
2. a kind of GaN horizontal nanowires electronic device preparation method according to claim 1, it is characterised in that：The lining
Bottom is Sapphire Substrate.
3. a kind of GaN horizontal nanowires electronic device preparation method according to claim 1, it is characterised in that：Use use
Vacuum coating equipment is when substrate surface plates metallic film, and the metallic film is thickness 2nm/2nm Ni/Au.
4. a kind of GaN horizontal nanowires electronic device preparation method according to claim 1, it is characterised in that：In HVPE
In growth apparatus, there is the Grown horizontal nanowire of catalyst in evaporation by VLS methods, growth conditions is：Temperature is
850 DEG C, GaCl flows are 10sccm, NH3Flow is 100sccm, and the time is 4 min.
5. a kind of GaN horizontal nanowires electronic device preparation method according to claim 1, it is characterised in that：Using true
Empty coating machine is on the good substrate of photoetching during metal film, and the metallic film is thickness 50nm/300nm Ni/Au.
6. a kind of GaN horizontal nanowires electronic device preparation method according to claim 1, it is characterised in that：Using
PECVD device deposit thickness is 2250 SiO2Condition be：Temperature is 300 DEG C, and pressure is 600mTorr, N2O flows are
1000sccm, SiH4Flow is 500sccm, and He flows are 25sccm, N2Flow is 475sccm.
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| CN201710287542.5A CN107195586B (en) | 2017-04-27 | 2017-04-27 | A kind of GaN horizontal nanowire electronic device preparation method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124272A (en) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | Integrated nonpolar GaN nanowire transistor high in electron mobility and preparation method thereof |
| CN105762078A (en) * | 2016-05-06 | 2016-07-13 | 西安电子科技大学 | GaN-based nanometer channel transistor with high electron mobility and manufacture method |
| CN106571405A (en) * | 2016-11-01 | 2017-04-19 | 华南师范大学 | Ultraviolet detector with GaN nanowire array and manufacturing method thereof |
-
2017
- 2017-04-27 CN CN201710287542.5A patent/CN107195586B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124272A (en) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | Integrated nonpolar GaN nanowire transistor high in electron mobility and preparation method thereof |
| CN105762078A (en) * | 2016-05-06 | 2016-07-13 | 西安电子科技大学 | GaN-based nanometer channel transistor with high electron mobility and manufacture method |
| CN106571405A (en) * | 2016-11-01 | 2017-04-19 | 华南师范大学 | Ultraviolet detector with GaN nanowire array and manufacturing method thereof |
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| CN107195586B (en) | 2019-08-09 |
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