CN107195522A - System, thick atom group forming method and the ultra-shallow junctions preparation method of cluster ion implantation - Google Patents
System, thick atom group forming method and the ultra-shallow junctions preparation method of cluster ion implantation Download PDFInfo
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- CN107195522A CN107195522A CN201710515940.8A CN201710515940A CN107195522A CN 107195522 A CN107195522 A CN 107195522A CN 201710515940 A CN201710515940 A CN 201710515940A CN 107195522 A CN107195522 A CN 107195522A
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- group
- chamber
- come out
- target
- ion gun
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
Abstract
The invention provides a kind of system of cluster ion implantation, thick atom group forming method and ultra-shallow junctions preparation method, the formation of thick atom group includes generating ion gun in ion gun generation cavity；The part ion source come out from ion gun generation cavity enters target chamber, bombards target, and the ion pounded from target, atom, molecule, atomic group are mutually collided, and generates atomic group；During the atomic group come out from target chamber enters group increase chamber, meanwhile, the part ion source come out from ion gun generation cavity enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so as to increase the accounting of powered thick atom group；The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, the charge atom group of the required charge-mass ratio of selection.The present invention realizes the thick atom group of ionization and the injection using thick atom group.
Description
Technical field
The present invention relates to ion implantation technique field, and in particular to a kind of system of cluster ion implantation, thick atom group
Forming method and ultra-shallow junctions preparation method.
Background technology
As cmos device from planer device structure is changed into three-dimensional device structures, its device feature size is less and less, work
Make that voltage is more and more lower, and to device architecture and the requirement more and more higher of technique.
Ultra-shallow junctions is to realize the key of advanced cmos device.And ultra-shallow junctions has special to ion implantation energy and dosage
It is required that.And when ion quality itself is smaller, it is accelerated and controls to turn into problem.
And traditional implanter be by gas or evaporation source in metallic filament launching electronics form by its ionization, so
The detection that magnetic field analysis part carries out charge-mass ratio is drawn out to by extraction electrode afterwards.Due to ion gun and ionization mechanism, the program is difficult shape
Into the thick atom group of ionization.
The content of the invention
In order to overcome problem above, the present invention is intended to provide a kind of system of cluster ion implantation, so as to increase to be formed
Atomic group or ion cluster volume.
In order to achieve the above object, the invention provides a kind of system of cluster ion implantation, it includes：
Ion gun generation cavity, for generating ion gun；
Target chamber, the part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；
Group increases chamber, during the atomic group come out from target chamber enters group increase chamber, meanwhile, go out from ion gun generation cavity
The part ion source come enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so as to increase powered
The accounting of thick atom group；
Magnetic field analysis chamber, the thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, choosing
The charge atom group of charge-mass ratio needed for selecting.
Preferably, in the ion gun generation cavity, using high direct voltage electric discharge generation plasma, which part plasma
Body is drawn out to target chamber.
Preferably, the target slant setting or placed in inner conical.
Preferably, formula motion is spinned in group increase chamber to hit in the part ion source come out from ion gun generation cavity
The atomic group come out from target chamber makes its powered.
In order to achieve the above object, present invention also offers a kind of thick atom group forming method, it comprises the following steps：
Step 01：Ion gun is generated using ion gun generation cavity；
Step 02:The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, come out from ion gun generation cavity
Part ion source enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so that it is former to increase band TV university
The accounting of son group；
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, selects institute
Need the charge atom group of charge-mass ratio.
Preferably, using high direct voltage electric discharge generation plasma, which part plasma is drawn out to target chamber.
Preferably, formula motion is spinned in group increase chamber to hit in the part ion source come out from ion gun generation cavity
The atomic group come out from target chamber makes its powered.
In order to achieve the above object, present invention also offers a kind of preparation method of ultra-shallow junctions, it includes：
Step 01：Ion gun is generated using ion gun generation cavity；
Step 02：The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, come out from ion gun generation cavity
Part ion source enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so that it is former to increase band TV university
The accounting of son group；
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, selects institute
Need the charge atom group of charge-mass ratio；
Step 05：The charge atom group screened from magnetic field analysis chamber is accelerated, and is injected into wafer, is formed
Ultra-shallow junctions.
Preferably, using high direct voltage electric discharge generation plasma, which part plasma is drawn out to target chamber.
Preferably, formula motion is spinned in group increase chamber to hit in the part ion source come out from ion gun generation cavity
The atomic group come out from target chamber makes its powered.
The system of the cluster ion implantation of the present invention, generates ion gun, and introduce by magnetic field using an independent cavity
In ion source chamber, in the cavity, the material of required injection is placed at a certain angle, and it is bombarded by ion gun, is passed through,
Get the compositions such as ion, atom, molecule, atomic group from the material can mutually collide, so as to increase thick atom group/ion cluster
Accounting, the then reciprocating motion using electronics in magnetic field, by atomic group ionization, draws and passes through finally by probe voltage
Magnetic field selects correct cluster ion implantation source, it is achieved thereby that the thick atom group of ionization and the note using thick atom group
Enter.
Brief description of the drawings
Fig. 1 is the block diagram of the system of the cluster ion implantation of the preferred embodiment of the present invention
Fig. 2 is the schematic flow sheet of the forming method of the thick atom group of the preferred embodiment of the present invention
Fig. 3 is the schematic flow sheet of the preparation method of the ultra-shallow junctions of the preferred embodiment of the present invention
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The present invention is described in further detail below in conjunction with 1~3 and specific embodiment.It should be noted that, accompanying drawing is adopted
With very simplified form, using non-accurately ratio, and the mesh only conveniently, clearly to reach aid illustration the present embodiment
's.
Referring to Fig. 1, a kind of system of cluster ion implantation of the present embodiment, it includes：
Ion gun generation cavity, for generating ion gun；Here, in ion gun generation cavity, discharged and generated using high direct voltage
Plasma, which part plasma can be drawn out to target chamber through magnetic field.
Target chamber, the part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；Here, in target chamber, using electric field acceleration ion gun
To bombard target, formation atomic group is through electric field or is extracted into group increase chamber.In order to effectively pound atomic radical, molecule etc.,
Here it can be placed by target slant setting or in inner conical.
Group increases chamber, during the atomic group come out from target chamber enters group increase chamber, meanwhile, go out from ion gun generation cavity
The part ion source come can enter group increase chamber through magnetic field and colliding the atomic group come out from target chamber makes its powered, from
And increase the accounting of powered thick atom group.In order to form effective shock, in this implementation, the part come out from ion gun generation cavity from
Component formula motion of being spinned in group increase chamber to hit the atomic group come out from target chamber makes its powered.
Magnetic field analysis chamber, the thick atom group come out from group increase chamber can enter magnetic field analysis chamber through magnetic field, carry out lotus
Matter is than screening, the charge atom group of charge-mass ratio needed for selection.
Accelerating cavity can also be included in the present embodiment, the charge atom group screened from magnetic field analysis chamber is added
Speed.
In addition, a kind of thick atom group forming method is additionally provided in the present embodiment, referring to Fig. 2, using the present embodiment
Above-mentioned cluster ion implantation system, comprise the following steps：
Step 01：Ion gun is generated using ion gun generation cavity；
Specifically, using high direct voltage electric discharge generation plasma, which part plasma is drawn out to target through magnetic field
Chamber.
Step 02：The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；
Specifically, bombard target using electric field acceleration ion gun, formation atomic group is through electric field or is extracted into group increase
Chamber.
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, come out from ion gun generation cavity
Part ion source enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so that it is former to increase band TV university
The accounting of son group；
Specifically, being drawn out to group through magnetic field from the part ion source that ion gun generation cavity comes out increases chamber.In order to effective
Hitting atomic group makes its powered, in the present embodiment, and the part ion source come out from ion gun generation cavity is done in group increase chamber
Screw movement makes its powered to hit the atomic group come out from target chamber.
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, selects institute
Need the charge atom group of charge-mass ratio.
Specifically, increasing the thick atom group that comes out of chamber through magnetic field from group enters magnetic field analysis chamber.
After step 04, step 05 can also be included：The charge atom group screened from magnetic field analysis chamber is added
Speed.
In the present embodiment, the system of ultra-shallow junctions can also be carried out using the above-mentioned cluster ion implantation system of the present embodiment
It is standby, referring to Fig. 3, specifically including following steps：
Step 01：Ion gun is generated using ion gun generation cavity；
Specifically, using high direct voltage electric discharge generation plasma, which part plasma is drawn out to target through magnetic field
Chamber.
Step 02：The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is bombarded from target
Ion, atom, molecule, the atomic group gone out is mutually collided, and generates atomic group；
Specifically, bombard target using electric field acceleration ion gun, formation atomic group is through electric field or is extracted into group increase
Chamber.
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, come out from ion gun generation cavity
Part ion source enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so that it is former to increase band TV university
The accounting of son group；
Specifically, being drawn out to group through magnetic field from the part ion source that ion gun generation cavity comes out increases chamber.In order to effective
Hitting atomic group makes its powered, in the present embodiment, and the part ion source come out from ion gun generation cavity is done in group increase chamber
Screw movement makes its powered to hit the atomic group come out from target chamber.
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, selects institute
Need the charge atom group of charge-mass ratio；
Specifically, increasing the thick atom group that comes out of chamber through magnetic field from group enters magnetic field analysis chamber.
Step 05：The charge atom group screened from magnetic field analysis chamber is accelerated, and is injected into wafer, is formed
Ultra-shallow junctions.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (10)
1. a kind of system of cluster ion implantation, it is characterised in that including：
Ion gun generation cavity, for generating ion gun；
Target chamber, the part ion source come out from ion gun generation cavity enters target chamber, bombards target, is pounded from target
Ion, atom, molecule, atomic group are mutually collided, and generate atomic group；
Group increases chamber, during the atomic group come out from target chamber enters group increase chamber, meanwhile, come out from ion gun generation cavity
Part ion source enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so that it is former to increase band TV university
The accounting of son group；
Magnetic field analysis chamber, the thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, selects institute
Need the charge atom group of charge-mass ratio.
2. system according to claim 1, it is characterised in that in the ion gun generation cavity, discharged using high direct voltage
Plasma is generated, which part plasma is drawn out to target chamber.
3. system according to claim 1, it is characterised in that the target slant setting is placed in inner conical.
4. system according to claim 1, it is characterised in that the part ion source come out from ion gun generation cavity is in group
Formula of being spinned in increase chamber motion makes its powered to hit the atomic group come out from target chamber.
5. a kind of thick atom group forming method, it is characterised in that comprise the following steps：
Step 01：Ion gun is generated using ion gun generation cavity；
Step 02:The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is pounded from target
Ion, atom, molecule, atomic group are mutually collided, and generate atomic group；
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, the part come out from ion gun generation cavity
Ion gun enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so as to increase powered thick atom group
Accounting；
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, the required lotus of selection
Matter than charge atom group.
6. method according to claim 5, it is characterised in that using high direct voltage electric discharge generation plasma, its middle part
Gas ions of grading are drawn out to target chamber.
7. method according to claim 5, it is characterised in that the part ion source come out from ion gun generation cavity is in group
Formula of being spinned in increase chamber motion makes its powered to hit the atomic group come out from target chamber.
8. a kind of preparation method of ultra-shallow junctions, it is characterised in that including：
Step 01：Ion gun is generated using ion gun generation cavity；
Step 02：The part ion source come out from ion gun generation cavity enters target chamber, bombards target, is pounded from target
Ion, atom, molecule, atomic group are mutually collided, and generate atomic group；
Step 03：During the atomic group come out from target chamber enters group increase chamber, meanwhile, the part come out from ion gun generation cavity
Ion gun enters group increase chamber and colliding the atomic group come out from target chamber makes its powered, so as to increase powered thick atom group
Accounting；
Step 04：The thick atom group come out from group increase chamber enters magnetic field analysis chamber, carries out charge-mass ratio screening, the required lotus of selection
Matter than charge atom group；
Step 05：The charge atom group screened from magnetic field analysis chamber is accelerated, and is injected into wafer, an ultra shallow is formed
Knot.
9. method according to claim 8, it is characterised in that using high direct voltage electric discharge generation plasma, its middle part
Gas ions of grading are drawn out to target chamber.
10. method according to claim 8, it is characterised in that the part ion source come out from ion gun generation cavity is in base
Formula motion of being spinned in group's increase chamber makes its powered to hit the atomic group come out from target chamber.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710515940.8A CN107195522B (en) | 2017-06-29 | 2017-06-29 | Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method |
| PCT/CN2017/091084 WO2018227668A1 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
| US16/620,859 US11120970B2 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710515940.8A CN107195522B (en) | 2017-06-29 | 2017-06-29 | Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN107195522A true CN107195522A (en) | 2017-09-22 |
| CN107195522B CN107195522B (en) | 2021-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710515940.8A Active CN107195522B (en) | 2017-06-16 | 2017-06-29 | Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050202657A1 (en) * | 2004-12-03 | 2005-09-15 | Epion Corporation | Formation of ultra-shallow junctions by gas-cluster ion irradiation |
| US20080242066A1 (en) * | 2004-10-22 | 2008-10-02 | Semiequip Inc. | Method Of Manufacturing Semiconductor |
| CN101384747A (en) * | 2005-11-07 | 2009-03-11 | 山米奎普公司 | Dual mode ion source for ion implantation |
| CN102844842A (en) * | 2010-04-21 | 2012-12-26 | 艾克塞利斯科技公司 | Silaborane implantation processes |
| CN104282526A (en) * | 2013-07-11 | 2015-01-14 | 中国科学院大连化学物理研究所 | Magnetron sputtering cluster ion source used for flight time mass spectrum |
| CN106048533A (en) * | 2016-06-27 | 2016-10-26 | 内蒙古大学 | Preparation method for SmCo alloy magnetostrictive films |
| CN106133872A (en) * | 2014-01-15 | 2016-11-16 | 艾克塞利斯科技公司 | Ion implant systems and the method with variable energy control |
-
2017
- 2017-06-29 CN CN201710515940.8A patent/CN107195522B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080242066A1 (en) * | 2004-10-22 | 2008-10-02 | Semiequip Inc. | Method Of Manufacturing Semiconductor |
| US20050202657A1 (en) * | 2004-12-03 | 2005-09-15 | Epion Corporation | Formation of ultra-shallow junctions by gas-cluster ion irradiation |
| CN101384747A (en) * | 2005-11-07 | 2009-03-11 | 山米奎普公司 | Dual mode ion source for ion implantation |
| CN102844842A (en) * | 2010-04-21 | 2012-12-26 | 艾克塞利斯科技公司 | Silaborane implantation processes |
| CN104282526A (en) * | 2013-07-11 | 2015-01-14 | 中国科学院大连化学物理研究所 | Magnetron sputtering cluster ion source used for flight time mass spectrum |
| CN106133872A (en) * | 2014-01-15 | 2016-11-16 | 艾克塞利斯科技公司 | Ion implant systems and the method with variable energy control |
| CN106048533A (en) * | 2016-06-27 | 2016-10-26 | 内蒙古大学 | Preparation method for SmCo alloy magnetostrictive films |
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| CN107195522B (en) | 2021-04-30 |
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