CN107171649A - A kind of new FET pipes and the distributed amplifier being made up of new FET pipes - Google Patents
A kind of new FET pipes and the distributed amplifier being made up of new FET pipes Download PDFInfo
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- CN107171649A CN107171649A CN201710390533.9A CN201710390533A CN107171649A CN 107171649 A CN107171649 A CN 107171649A CN 201710390533 A CN201710390533 A CN 201710390533A CN 107171649 A CN107171649 A CN 107171649A
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- distributed amplifier
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- 238000013461 design Methods 0.000 abstract description 16
- 238000013459 approach Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to Monolithic Microwave Integrated Circuit Technology field, specifically related to a kind of new FET pipes and distributed amplifier, the second body that new FET pipes include the first body of U-shaped design and are arranged in the middle of the first body U-shaped opening, two support arms of the left and right sides of second body respectively with the U-shaped of first body are connected, the upper and lower ends of second body are respectively arranged with drain junction and grid interface, the bottom lower end of first body is provided with source electrode interface, the distributed amplifier of the present invention manages the new FET that the second level FET pipes of original distributed amplifier replace with the present invention by conventional FET pipes, eliminate the radiofrequency signal time difference problem of traditional approach presence, the excess-attenuation of signal will not be caused, it ensure that the performance of amplifier.
Description
Technical field
The present invention relates to Monolithic Microwave Integrated Circuit Technology field, and in particular to a kind of new FET is managed and managed by new FET
The distributed amplifier of composition.
Background technology
The main advantage of distributed amplifier is to apply in MMIC (monolithic integrated microwave circuit) design field,
On the basis of simple topological circuit, extremely wide bandwidth of operation can be obtained, and change of its performance to technological parameter is relatively unwise
Sense, is a kind of demand very wide circuit, is mainly used in microwave test instrument, communication system, optical system.
At present, the design method of distributed amplifier is as follows：
Fig. 1 is the distributed amplifier circuit structure schematic diagram of prior art.Wherein, core cell is dotted-line ellipse mark
Show, formed by the first order FET1 and common gate of common source second level FET2 cascades, input/output port has resistance capacitance
The circuit of composition is used as load matched.
For its application in MMIC designing techniques, although major MMIC techniques manufacturers are all according to the work of oneself in the world
Skill line feature extraction has gone out that suitable FET pipes model is selective to be used, but the model for the conventional FET pipes 10 typically selected is basic
All it is consistent, its grid, source electrode, the interface shape drained are as shown in Figure 2.
The distributed amplifier of the model interface form provided according to technique manufacturer, Fig. 1 common sources and common gate cascade leads to
Normal design implementation method is as shown in figure 3, the first order FET1 of common source drain junction is connected to the of common gate after exporting
The two grades of FET2 interface of source electrode 11, and the interface of source electrode 12 is unloaded, source electrode 11 and source electrode 12 are interconnected by air bridges 13, subsequently
Matched accordingly again and optimization design, the final design result of acquisition.
From figure 3, it can be seen that according to above-mentioned existing design method, the first order FET1 of common source output is only connected
One end of the second level FET2 source electrodes of common gate is arrived, the other end of second level FET2 source electrodes is unloaded, and this allows for common grid
The second level FET2 of pole pipe is when receiving the radiofrequency signal of first order FET1 outputs, two source electrodes of second level FET2 pipes
11st, the processing radiofrequency signal that 12 ports can not be simultaneously, the unloaded one end of source electrode 12 will lean on other end source electrode 3 to pass through air bridges 13
After transmitting, ability start to process signal, two source electrodes 11,12 ports there is the time difference when handling radiofrequency signal,
It can cause the decay of signal during output superposition, macroscopically can show the gain of radiofrequency signal and power diminishes；Put in distribution
In big device, the unit so cascaded have it is multigroup, every group during radiofrequency signal is handled all can generation time it is poor, all productions
The raw time difference can all bring the decay of signal, and the signal attenuation of all concatenation unit accumulations is larger, have impact on distributed air-defense
The gain of device and power.
The content of the invention
According to the deficiencies in the prior art, the distribution constituted the invention provides a kind of new FET pipes and by new FET pipes
Amplifier, to solve cascade distributed amplifier traditional at present band on the FET tube models provided based on technique producer are realized
The drawbacks of coming, i.e., in the realization of cascade, solve the problems, such as the input disequilibrium that signal input tape comes in traditional design, improve
The performance of distributed amplifier.
The present invention new FET pipe, including U-shaped design the first body and be arranged in the first body U-shaped opening
Between the second body, two support arms of the left and right sides of second body respectively with the U-shaped of first body are connected, the second pipe
The upper and lower ends of body are respectively arranged with drain junction and grid interface, and the bottom lower end of first body is provided with source electrode and connect
Mouthful.Connected between second body and the U-shaped support arm of the first body by the active channel layer of doping, pass through control gate interface
Magnitude of voltage, can control the on and off between drain junction and source electrode interface.
The distributed amplifier being made up of new FET pipes of the present invention, including the RF signal input end, many being sequentially connected
Individual first order FET pipes, multiple second level FET pipes and RF signal output, the RF signal input end and radiofrequency signal are defeated
Go out end and be connected to load matched；The first order FET pipes are using routine FET pipes, and the second level FET pipes are using new
FET is managed, and RF signal input end connects the grid of the first order FET pipes, the drain electrode connection second level FET of first order FET pipes
The source electrode of pipe, the drain electrode connection RF signal output of second level FET pipes.
The present invention design principle be：According to the model interface form of new FET pipes, distributed amplifier circuit is changed
The mutual contact mode of concatenation unit, first order FET pipes are identical with traditional distributed amplifier circuit, managed using conventional FET, second
Level FET pipes are managed using new FET, due to second level FET pipe only one of which source electrode interfaces, the radio frequency letter of first order FET pipes transmission
Number the drain electrode of the second body directly can be transferred to by a source electrode of second level FET pipes, eliminate penetrating for traditional approach presence
Frequency signal time difference problem, will not cause the excess-attenuation of signal, it is ensured that the performance of amplifier.
The new FET pipes of the present invention and the distributed amplifier being made up of new FET pipes have the following advantages that：
(1) by setting up new FET tube models and changing the change of FET pipe cascade systems, it is ensured that first order FET is managed
Output signal be input to the both sides of the second level the first body of FET pipes simultaneously, it is ensured that the place that the both sides of the second body can be simultaneously
The signal received is managed, so as to avoid the poor problem of signal time that conventional FET pipes cascade is brought；
(2) air bridges on existing FET tube models are removed, reduces technologic manufacture difficulty, significantly increase
The reliability of pipe；
(3) by the design and the change of mutual contact mode of new model, gain, the power of distributed amplifier are improved
Energy.
Brief description of the drawings
Fig. 1 is the distributed amplifier circuit structure schematic diagram of prior art；
Fig. 2 designs a model figure for the conventional FET pipes of prior art；
Fig. 3 is the distributed amplifier circuit design model figure of prior art；
Fig. 4 designs a model figure for the new FET pipes of the present invention；
Fig. 5 is distributed amplifier circuit design model figure of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1：
As shown in figure 4, present embodiment discloses the first body 21 and the setting of a kind of new FET pipes 20, including U-shaped design
The U of the left and right sides of the body 22 of the second body 22 second in the middle of the U-shaped opening of the first body 21 respectively with the first body 21
Two support arms 23 of shape are connected, and the upper and lower ends of the second body 22 are respectively arranged with drain junction 24 and grid interface 25, the first pipe
The bottom lower end of body 22 is provided with source electrode interface 26.
Connected between the U-shaped support arm 23 of second body 22 and the first body 21 by forms such as PN junctions, pass through control gate
The magnitude of voltage of interface 25, can control the on and off between drain junction 24 and source electrode interface 26.
Compared with the conventional FET pipes 10 of prior art, 26, the source electrode interface of the new FET pipes 20 of the present embodiment sets one
Individual, radiofrequency signal is by the simultaneous transmission of source electrode interface 26 to the support arm 23 of the left and right of the first body 21 two, then simultaneous transmission is arrived
The left and right sides of second body 22, is not in the problem of existence time is poor after being transmitted by air bridges 13.By existing FET pipe dies
Air bridges in type are removed, and are reduced technologic manufacture difficulty, are significantly increased the reliability of pipe.
Embodiment 2：
As shown in figure 5, believing present embodiment discloses a kind of distributed amplifier being made up of new FET pipes, including radio frequency
Number input 31, multiple first order FET pipes 32, multiple second level FET pipes 33 and RF signal output 34, the radiofrequency signal
Input 31 and RF signal output 32 are connected to the match circuit being made up of resistance and electric capacity as load matched 35,
The first order FET pipes 32 are penetrated using routine FET pipes 10, the second level FET pipes 33 using the new FET pipes 20 of the present invention
Frequency signal input part 31 connects the grid of the first order FET pipes 32, the drain electrode connection second level FET pipes of first order FET pipes 32
33 source electrode, the drain electrode connection RF signal output 34 of second level FET pipes 33.
The distributed amplifier being made up of new FET pipes of the present embodiment, first order FET pipes 32 are put with traditional distribution
Big device circuit is identical, and using conventional FET pipes 10, second level FET pipes 33 use new FET pipes 20, due to second level FET pipes 33
Source electrode 26 shares an interface, and the radiofrequency signal of first order FET pipes 32 can be directly inputted to the source electrode 26 of second level FET pipes 33,
Eliminate traditional approach and transmit the radiofrequency signal time difference problem existed by air bridges 13, by setting up new FET tube models
And changing the change of FET pipe cascade systems, it is ensured that the output signal of first order FET pipes 32 is input to second level FET simultaneously
The both sides of the body 21 of pipe 33 first, it is ensured that the signal that the processing that second level FET pipes 33 can be simultaneously is received, will not cause signal
Excess-attenuation, it is ensured that the performance of amplifier.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is noted that for this
For the those of ordinary skill of technical field, on the premise of the application principle is not departed from, some improvement and profit can also be made
Decorations, within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc. are regarded as being included in this
Within the protection domain of invention.
Claims (3)
1. a kind of new FET pipes, it is characterised in that：The first body for being designed including U-shaped and it is arranged on the first body U-shaped and opens
The second body in the middle of mouthful, two support arms of the left and right sides of second body respectively with the U-shaped of first body are connected, the
The upper and lower ends of two bodys are respectively arranged with drain junction and grid interface, and the bottom lower end of first body is provided with source electrode
Interface.
2. a kind of distributed amplifier being made up of new FET pipes, it is characterised in that：Including the radiofrequency signal input being sequentially connected
End, multiple first order FET pipes, multiple second level FET pipes and RF signal output, RF signal input end and the radio frequency letter
Number output end is connected to load matched；The first order FET pipes are using routine FET pipes, and the second level FET pipes are using new
Type FET is managed, and RF signal input end connects the grid of the first order FET pipes, the drain electrode connection second level of first order FET pipes
The source electrode of FET pipes, the drain electrode connection RF signal output of second level FET pipes.
3. a kind of distributed amplifier being made up of new FET pipes as claimed in claim 2, it is characterised in that：The load
Match the match circuit to be made up of resistance and electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710390533.9A CN107171649B (en) | 2017-05-27 | 2017-05-27 | Novel FET tube and distributed amplifier composed of novel FET tubes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710390533.9A CN107171649B (en) | 2017-05-27 | 2017-05-27 | Novel FET tube and distributed amplifier composed of novel FET tubes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107171649A true CN107171649A (en) | 2017-09-15 |
| CN107171649B CN107171649B (en) | 2020-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710390533.9A Active CN107171649B (en) | 2017-05-27 | 2017-05-27 | Novel FET tube and distributed amplifier composed of novel FET tubes |
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| Country | Link |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003065572A1 (en) * | 2002-01-25 | 2003-08-07 | Centellax, Inc. | Distributed level-shifting network for cascading broadband amplifiers |
| CN101699617A (en) * | 2009-10-29 | 2010-04-28 | 复旦大学 | Preparation method of self-aligned tunneling field effect transistor |
| CN102184955A (en) * | 2011-04-07 | 2011-09-14 | 清华大学 | Complementary tunneling field effect transistor and forming method thereof |
| US20110237037A1 (en) * | 2008-09-22 | 2011-09-29 | Samsung Electronics Co., Ltd. | Methods of Forming Recessed Channel Array Transistors and Methods of Manufacturing Semiconductor Devices |
| JP2013197596A (en) * | 2012-03-21 | 2013-09-30 | Samsung Electronics Co Ltd | Field-effect transistor structure |
| CN204190644U (en) * | 2014-11-20 | 2015-03-04 | 上海交通大学 | A kind of short time delay high steepness pulse amplifying circuit |
| EP2919384A1 (en) * | 2014-03-10 | 2015-09-16 | Fujitsu Limited | Distributed amplifier |
| CN105374876A (en) * | 2014-08-20 | 2016-03-02 | 台湾积体电路制造股份有限公司 | Finfet transistor with u-shaped channel |
-
2017
- 2017-05-27 CN CN201710390533.9A patent/CN107171649B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003065572A1 (en) * | 2002-01-25 | 2003-08-07 | Centellax, Inc. | Distributed level-shifting network for cascading broadband amplifiers |
| US20110237037A1 (en) * | 2008-09-22 | 2011-09-29 | Samsung Electronics Co., Ltd. | Methods of Forming Recessed Channel Array Transistors and Methods of Manufacturing Semiconductor Devices |
| CN101699617A (en) * | 2009-10-29 | 2010-04-28 | 复旦大学 | Preparation method of self-aligned tunneling field effect transistor |
| CN102184955A (en) * | 2011-04-07 | 2011-09-14 | 清华大学 | Complementary tunneling field effect transistor and forming method thereof |
| JP2013197596A (en) * | 2012-03-21 | 2013-09-30 | Samsung Electronics Co Ltd | Field-effect transistor structure |
| EP2919384A1 (en) * | 2014-03-10 | 2015-09-16 | Fujitsu Limited | Distributed amplifier |
| CN105374876A (en) * | 2014-08-20 | 2016-03-02 | 台湾积体电路制造股份有限公司 | Finfet transistor with u-shaped channel |
| CN204190644U (en) * | 2014-11-20 | 2015-03-04 | 上海交通大学 | A kind of short time delay high steepness pulse amplifying circuit |
Non-Patent Citations (1)
| Title |
|---|
| WEI WANG 等: "Design of U-Shape Channel Tunnel FETs With SiGe Source Regions", 《IEEE TRANSACTIONS ON ELECTRON DEVECES》 * |
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| CN107171649B (en) | 2020-07-31 |
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