CN107154340A - Substrate cleaning method and device - Google Patents
Substrate cleaning method and device Download PDFInfo
- Publication number
- CN107154340A CN107154340A CN201610121195.4A CN201610121195A CN107154340A CN 107154340 A CN107154340 A CN 107154340A CN 201610121195 A CN201610121195 A CN 201610121195A CN 107154340 A CN107154340 A CN 107154340A
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- Prior art keywords
- ozone
- water pot
- deionization water
- reaction chamber
- deionization
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000004140 cleaning Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 128
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 65
- 238000006243 chemical reaction Methods 0.000 claims abstract description 43
- 239000007864 aqueous solution Substances 0.000 claims abstract description 31
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 11
- 231100000719 pollutant Toxicity 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 7
- 238000002242 deionisation method Methods 0.000 claims description 69
- 239000000243 solution Substances 0.000 claims description 26
- 239000008367 deionised water Substances 0.000 claims description 23
- 229910021641 deionized water Inorganic materials 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 18
- 239000002699 waste material Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 10
- 230000007797 corrosion Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 6
- 239000003340 retarding agent Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006193 liquid solution Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000003403 water pollutant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a substrate cleaning method. The method comprises the following steps: rotating a substrate carrying table for clamping a substrate in the reaction cavity; injecting CO into the reaction chamber2Forming a water film on the surface of the substrate by using an aqueous solution; and spraying an ozone aqueous solution into the reaction cavity to oxidize and remove the pollutants on the surface of the substrate. The invention also provides a substrate cleaning device. The invention injects CO into the reaction cavity2While ozone is also introduced into the reaction chamber, the ozone oxidizes contaminants and organic coatings on the substrate surface, and CO2The metal of the substrate surface is protected from corrosion. The invention can not only exert the advantages of cleaning the silicon chip by ozone, but also avoid the corrosion of metal. And ozone and CO2The price is cheap and easy to obtain, and the economical efficiency and the environmental protection are kept.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of matrix cleaning method and device.
Background technology
Semiconductor devices is widely used in various communications, medical treatment, industry, military and domestic electronic appliances.
These semiconductor devices are prepared from by semiconductor chip.The size of these devices is general all micro-
Meter level, device is very sensitive to pollutant, and minimum organic and metallic particles can cause the failure of device.
Therefore, in the preparation process of semiconductor devices, it is typically very crucial work that cleaning silicon chip, which removes pollutant,
Skill step.
For many years, the cleaning of semiconductor chip is generally divided into three to four independent steps, using sulfuric acid, double
The mixed solutions such as oxygen water are handled substrate.When there is metallic film on the surface of substrate, it will utilize organic
Solvent is cleaned.These methods are used widely when cleaning semiconductor chip, but still have one
A little shortcomings.These shortcomings are including organic chemistry cleaning agent price is higher, the various cleaning step times are longer, change
Learn the more, waste liquid disposal of cleaning agent consumption inconvenient, therefore substantial amounts of research makes great efforts to develop new silicon
Piece cleaning technique.
Recently, mixed using ozone and water, ozone spreads cleaning silicon chip technology in moisture film, in semiconductor core
Start to be applied in piece preparation process.This ozone technology has been proven to effective cleaning and removes silicon chip
Surface contaminant and organic film, and the shortcoming of classical acid and hydrogen peroxide mixed liquor cleaning method can be overcome.Profit
The cleaning for spreading water film with ozone can be saved the time, it is not necessary to more expensive acid and hydrogen peroxide, and be adopted
With the mode of sprinkling, the consumption and equipment placing space of water can be saved.
Ozone diffusion cleaning technique can inject ozone in water, then Ozone Water is ejected into substrate surface injections
When the coolant-temperature gage gone out is higher, the removal efficiency of silicon chip surface organic film and pollution will be substantially improved.
It may be corroded when substrate contacts some metals in ozone and hot water, silicon chip semiconductor-on-insulator chip.
When temperature rises in technical process, the speed of various reactions rises.Metal erosion is also further serious.Directly
The different metal of contact will produce electrochemical cell effect, further promote corrosion.
Many methods be used for reduce and avoid corrosion of metal, these methods mainly have reduction technological temperature or
The addition corrosion retarding agent in water.Because temperature is reduced the chemistry for removing organic film or pollution will be influenceed anti-
Should be active, so not using the method for reduction technological temperature to avoid corrosion of metal in actual production.It is rotten
Erosion retarding agent mainly has BTA, silicate, nitrate etc..This this retarding agent with ozone clean technique,
It can be cleaned with higher temperature, while avoiding silicon chip aluminum steel from being corroded.
Certainly when cleaning semiconductor chip, corrosion retarding agent is there is also some shortcomings, such as necessary and process liquid
Effectively mix, different retarding agents can only be effective to special metal under specific parameter.In a word, in ozone
There is still a need for a kind of method, can be prevented in cleaning process, the metal such as aluminium and copper on silicon chip in cleaning
Corrosion.
The content of the invention
It is an object of the invention to provide a kind of matrix cleaning method, methods described can prevent from cleaning in substrate
During, the metal such as aluminium and copper on substrate is corroded.
Another object of the present invention is a kind of Weft cleaner of offer.
In order to achieve the above object, the technical solution adopted by the present invention is：
A kind of matrix cleaning method, comprises the following steps：
The slide holder of clamping substrate in rotational response chamber；
CO is sprayed into the reaction chamber2The aqueous solution, in substrate surface formation moisture film；
Ozone water solution is sprayed into the reaction chamber, to the pollutant oxidation removal of the substrate surface.
In such scheme, ozone water solution is being sprayed into the reaction chamber, the pollution to the substrate surface
After thing oxidation removal, comprise the following steps：
Stop spraying ozone water solution into the reaction chamber, continue to spray CO into the reaction chamber2It is water-soluble
Liquid, cleans the substrate surface；
Stop spraying CO into the reaction chamber2The aqueous solution, and the slide holder is rotated at a high speed so that institute
State substrate surface drying.
In such scheme, the CO2The preparation of the aqueous solution comprises the following steps：
CO2By the first diffuser even into the deionized water in the first deionization water pot, CO is formed2
The aqueous solution.
In such scheme, the preparation of the ozone water solution comprises the following steps：
Ozone, even into the deionized water in the second deionization water pot, forms ozone by the second diffuser
The aqueous solution.
In such scheme, the temperature of the deionized water in the first deionization water pot is heated to room temperature
~100 DEG C.
In such scheme, the temperature of the deionized water in the second deionization water pot is heated to room temperature
~100 DEG C.
A kind of Weft cleaner, described device includes：
Reaction chamber, the reaction chamber is used to clean substrate；
Slide holder, the slide holder is arranged in the reaction chamber, and the substrate is positioned on the slide holder；
Rotating mechanism, the rotating mechanism is arranged at the reaction chamber bottom, and is connected with the slide holder,
For driving the slide holder to rotate；
CO2Source of the gas；
First diffuser, the CO2Source of the gas is connected by first gas pipeline with first diffuser；
First deionization water pot, first diffuser is arranged in the first deionization water pot, and described
One diffuser is used for the CO2The CO of source of the gas2Gas is even into going in the first deionization water pot
In ionized water, CO is formed2The aqueous solution；
Primary heater, the primary heater is arranged in the first deionization water pot, for by described in
Deionized water heating in first deionization water pot；
Ozone generator, for producing ozone；
Second diffuser, the ozone generator is crossed second gas pipeline and is connected with second diffuser；
Second deionization water pot, second diffuser is arranged in the second deionization water pot, and described
Two diffusers are used for the ozone for producing the ozone generator even into the second deionization water pot
In deionized water, ozone water solution is formed；
Secondary heater, the secondary heater is arranged in the second deionization water pot, for by described in
Deionized water heating in second deionization water pot；
First changeover valve, the first deionization water pot and the second deionization water pot pass through liquid line respectively
Road is connected with the described first multidirectional valve inlet；
Nozzle, the nozzle is connected with the outlet of first changeover valve, in the first deionization water pot
CO2Ozone water solution in the aqueous solution and the second deionization water pot enters institute by the first changeover valve respectively
State nozzle.
In such scheme, on the liquid line between the first deionization water pot and first changeover valve according to
It is secondary to be provided with the first pump and the first filter.
In such scheme, on the liquid line between the second deionization water pot and first changeover valve according to
It is secondary to be provided with the second pump and the second filter.
In such scheme, described device also includes：
Waste collection mouthful, the waste collection mouthful is arranged on the reaction chamber bottom；
Second changeover valve, the waste collection mouthful is connected by recovery pipe with the entrance of second changeover valve；
Discharge pipe, the outlet of second changeover valve respectively with the first deionization water pot, described second
Deionization water pot is connected with the discharge pipe.
Compared with prior art, the beneficial effects of the invention are as follows：
Present invention injection into reaction chamber contains CO2Liquid solution, while ozone also is introduced into reaction chamber,
The pollutant and organic coating of ozone oxidation substrate surface, and CO2The metal of substrate surface is then protected not by corruption
Erosion.The present invention can both play the advantage of ozone clean silicon chip, while avoiding corrosion of metal.And ozone
With CO2It is cheap, be readily obtained, maintain economy with environmental protection.
Brief description of the drawings
Fig. 1 is a kind of process chart of matrix cleaning method provided in an embodiment of the present invention.
Fig. 2 is a kind of structural representation of Weft cleaner provided in an embodiment of the present invention.
Embodiment
The present invention substrate Cleaning principle be：The surface of semiconductor chip for having metal to surface sprays CO2Water
Solution and ozone water solution, CO2The aqueous solution protects the metal of substrate surface not to be corroded, and ozone water solution is to base
The pollutant on piece surface carries out oxidation removal.
In order to be better understood from above-mentioned technical proposal, below in conjunction with Figure of description and specific embodiment party
Above-mentioned technical proposal is described in detail formula.
Embodiment one：
As shown in figure 1, a kind of matrix cleaning method, comprises the following steps：
Step 110, in rotational response chamber clamping substrate slide holder；
Step 120, CO is sprayed into the reaction chamber2The aqueous solution, in substrate surface formation moisture film；
Specifically, the CO2The preparation of the aqueous solution comprises the following steps：CO2It is uniform by the first diffuser
Into in the deionized water in the first deionization water pot, CO is formed2The aqueous solution；The first deionization water pot
In the temperature of deionized water be heated to room temperature~100 DEG C.CO2The aqueous solution can also be in the first deionization water pot
Middle heating becomes steam, reinjects in reaction chamber so that cleaning performance is more preferable.
Step 130, ozone water solution is sprayed into the reaction chamber, the pollutant of the substrate surface is aoxidized
Remove.
Specifically, the preparation of the ozone water solution comprises the following steps：Ozone is uniform by the second diffuser
Into in the deionized water in the second deionization water pot, ozone water solution is formed；The second deionization water pot
In the temperature of deionized water be heated to room temperature~100 DEG C.
In the present embodiment, ozone water solution is being sprayed into the reaction chamber, the pollution to the substrate surface
After thing oxidation removal, also comprise the following steps：
Step 140, stop spraying ozone water solution into the reaction chamber, continue to spray into the reaction chamber
CO2The aqueous solution, cleans the substrate surface；
Step 150, stop spraying CO into the reaction chamber2The aqueous solution, and the slide holder is rotated at a high speed,
So that the substrate surface is dried.
Embodiment two：
As shown in Fig. 2 the present embodiment provides a kind of Weft cleaner, described device includes：Reaction chamber 101,
The reaction chamber 101 is used to clean substrate 103；Slide holder 104, the slide holder 104 is arranged on described anti-
Answer in chamber 101, the substrate 103 is positioned on the slide holder 104；Rotating mechanism 129, the rotation
Mechanism 129 is arranged at the bottom of reaction chamber 101, and is connected with the slide holder 104, for driving
State slide holder 104 to rotate, and then drive the substrate 103 to rotate；CO2Source of the gas 106, can be CO2
Hold-up tank or CO2Generator；First diffuser 111, the CO2Source of the gas 106 passes through first gas pipeline
127 are connected with first diffuser 111；First deionization water pot 113, first diffuser 111 is set
Put in the first deionization water pot 113, first diffuser 111 is used for the CO2Source of the gas 106
CO2Gas forms CO even into the deionized water 110 in the first deionization water pot 1132
The aqueous solution；Primary heater 112, the primary heater 112 is arranged at the first deionization water pot 113
It is interior, for the deionized water in the first deionization water pot 113 to be heated, it is heated to room temperature~100 DEG C；
Ozone generator 126, for producing ozone；Second diffuser 120, the ozone generator 126 crosses second
Gas piping 125 is connected with second diffuser 120；Second deionization water pot 118, second diffusion
Device 120 is arranged in the second deionization water pot 118, and second diffuser 120 is used for will be described smelly
The ozone that Oxygen Generator 126 is produced is even into the deionized water 121 in the second deionization water pot 118
In, form ozone water solution；Secondary heater 119, the secondary heater 119 is arranged at described second and gone
In ion water pot 118, for the deionized water in the second deionization water pot 118 to be heated, it is heated to
Room temperature~100 DEG C；First changeover valve 130, the first deionization water pot 113 and the second deionization water pot
118 are connected by liquid line (108,123) with the entrance of the first changeover valve 130 respectively；Nozzle 102,
The nozzle 102 is connected with the outlet of first changeover valve 130, in the first deionization water pot 113
CO2Ozone water solution in the aqueous solution and the second deionization water pot 118 passes through the first changeover valve respectively
130 enter the nozzle 102.
In the present embodiment, the liquid between the first deionization water pot 113 and first changeover valve 130
The first pump 109 and the first filter 107 are sequentially provided with pipeline 108；The second deionization water pot 118 with
The second pump 122 and the second filter are sequentially provided with liquid line 123 between first changeover valve 130
124。
In the present embodiment, described device also includes：Waste collection mouthful 105, the waste collection mouthful 105 is set
In the bottom of reaction chamber 101；Second changeover valve 115, the waste collection mouthful 105 passes through recovery pipe
128 are connected with 115 entrances of second changeover valve；Discharge pipe 116, second changeover valve 115
Outlet respectively with the first deionization water pot 113, the second deionization water pot 118 and the discharge pipe
116 are connected.
The course of work of the present embodiment is as follows：
When the pollutant to the surface of substrate 103 is cleaned, the first step：Rotating mechanism 129 makes slide holder
104 clamping substrates 103 rotate, and rotary rpm is 0~1000rpm；Second step：First pump 109 works, and makes
CO after being heated in first deionization water pot 1132The aqueous solution enters in liquid line 108, the first filter
107 couples of CO2The aqueous solution is filtered, CO2The aqueous solution is sprayed by the first changeover valve 130 into nozzle 102
The surface of substrate 103 of rotation is mapped to, moisture film is formed, and the surface of substrate 103 metal that may be present is formed
Protection；3rd step：Second pump 122 is started working, and makes the ozone after being heated in the second deionization water pot 118
The aqueous solution enters in liquid line 123, and the second filter 124 is removed to the impurity in ozone water solution,
Ozone water solution enters nozzle 102 by the first changeover valve 130, and is ejected into the surface of substrate 103, Ozone Water
Pollutant oxidation removal of the solution to the surface of substrate 103；4th step：Second pump 122 is stopped, ozone
The aqueous solution is not ejected into the surface of substrate 103, and the first pump 109 works on, CO2The aqueous solution is ejected into substrate
103 surfaces, are washed to the surface of substrate 103；5th step：First pump 109 is stopped, now aneroid
Body is ejected into the surface of substrate 103, and rotating mechanism 129 makes the clamping substrate 103 of slide holder 104 with 500~3000rpm
Rotating speed at a high speed rotate, make the dry tack free of substrate 103.
The waste liquid produced during substrate 103 is cleaned is reclaimed by waste collection mouthful 105, into recovery tube
In road 128, recovery pipe 128 connects the second changeover valve 115, and the switching of the second changeover valve 115 can lead to waste liquid
Cross pipeline 114 to be recycled in the first deionization water pot 113, or the second deionized water is recycled to by pipeline 117
Recycled in tank 118, it is also changeable waste liquid is discharged by discharge pipe 116.
Advantages of the present invention is as follows：
Present invention injection into reaction chamber contains CO2Liquid solution, while ozone also is introduced into reaction chamber,
The pollutant and organic coating of ozone oxidation substrate surface, and CO2The metal of substrate surface is then protected not by corruption
Erosion.The present invention can both play the advantage of ozone clean silicon chip, while avoiding corrosion of metal.And ozone
With CO2It is cheap, be readily obtained, maintain economy with environmental protection.
Particular embodiments described above, is entered to the purpose of the present invention, technical scheme and beneficial effect
One step is described in detail, should be understood that the specific embodiment that the foregoing is only the present invention, not
For limiting the present invention, within the spirit and principles of the invention, any modification for being made, equivalent substitution,
Improve etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of matrix cleaning method, it is characterised in that comprise the following steps：
The slide holder of clamping substrate in rotational response chamber；
CO is sprayed into the reaction chamber2The aqueous solution, in substrate surface formation moisture film；
Ozone water solution is sprayed into the reaction chamber, to the pollutant oxidation removal of the substrate surface.
2. matrix cleaning method as claimed in claim 1, it is characterised in that sprayed into the reaction chamber
Ozone water solution is penetrated, after the pollutant oxidation removal of the substrate surface, is comprised the following steps：
Stop spraying ozone water solution into the reaction chamber, continue to spray CO into the reaction chamber2It is water-soluble
Liquid, cleans the substrate surface；
Stop spraying CO into the reaction chamber2The aqueous solution, and the slide holder is rotated at a high speed so that institute
State substrate surface drying.
3. matrix cleaning method as claimed in claim 1, it is characterised in that the CO2The system of the aqueous solution
It is standby to comprise the following steps：
CO2By the first diffuser even into the deionized water in the first deionization water pot, CO is formed2
The aqueous solution.
4. matrix cleaning method as claimed in claim 1, it is characterised in that the system of the ozone water solution
It is standby to comprise the following steps：
Ozone, even into the deionized water in the second deionization water pot, forms ozone by the second diffuser
The aqueous solution.
5. matrix cleaning method as claimed in claim 3, it is characterised in that the first deionization water pot
In the temperature of deionized water be heated to room temperature~100 DEG C.
6. matrix cleaning method as claimed in claim 4, it is characterised in that the second deionization water pot
In the temperature of deionized water be heated to room temperature~100 DEG C.
7. a kind of Weft cleaner, it is characterised in that described device includes：
Reaction chamber, the reaction chamber is used to clean substrate；
Slide holder, the slide holder is arranged in the reaction chamber, and the substrate is positioned on the slide holder；
Rotating mechanism, the rotating mechanism is arranged at the reaction chamber bottom, and is connected with the slide holder,
For driving the slide holder to rotate；
CO2Source of the gas；
First diffuser, the CO2Source of the gas is connected by first gas pipeline with first diffuser；
First deionization water pot, first diffuser is arranged in the first deionization water pot, and described
One diffuser is used for the CO2The CO of source of the gas2Gas is even into going in the first deionization water pot
In ionized water, CO is formed2The aqueous solution；
Primary heater, the primary heater is arranged in the first deionization water pot, for by described in
Deionized water heating in first deionization water pot；
Ozone generator, for producing ozone；
Second diffuser, the ozone generator is crossed second gas pipeline and is connected with second diffuser；
Second deionization water pot, second diffuser is arranged in the second deionization water pot, and described
Two diffusers are used for the ozone for producing the ozone generator even into the second deionization water pot
In deionized water, ozone water solution is formed；
Secondary heater, the secondary heater is arranged in the second deionization water pot, for by described in
Deionized water heating in second deionization water pot；
First changeover valve, the first deionization water pot and the second deionization water pot pass through liquid line respectively
Road is connected with the described first multidirectional valve inlet；
Nozzle, the nozzle is connected with the outlet of first changeover valve, in the first deionization water pot
CO2Ozone water solution in the aqueous solution and the second deionization water pot enters institute by the first changeover valve respectively
State nozzle.
8. Weft cleaner as claimed in claim 7, it is characterised in that the first deionization water pot
The first pump and the first filter are sequentially provided with liquid line between first changeover valve.
9. Weft cleaner as claimed in claim 7, it is characterised in that the second deionization water pot
The second pump and the second filter are sequentially provided with liquid line between first changeover valve.
10. Weft cleaner as claimed in claim 7, it is characterised in that described device also includes：
Waste collection mouthful, the waste collection mouthful is arranged on the reaction chamber bottom；
Second changeover valve, the waste collection mouthful is connected by recovery pipe with the entrance of second changeover valve；
Discharge pipe, the outlet of second changeover valve respectively with the first deionization water pot, described second
Deionization water pot is connected with the discharge pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121195.4A CN107154340A (en) | 2016-03-03 | 2016-03-03 | Substrate cleaning method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121195.4A CN107154340A (en) | 2016-03-03 | 2016-03-03 | Substrate cleaning method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115488095A (en) * | 2022-08-11 | 2022-12-20 | 复旦大学 | Ozone cleaning method and device for silicon wafer |
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| US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
| US20040216763A1 (en) * | 1997-05-09 | 2004-11-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| CN101452824B (en) * | 2007-12-05 | 2012-07-18 | 硅电子股份公司 | Wet-chemistry semiconductor-chip treatment method |
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| US20040216763A1 (en) * | 1997-05-09 | 2004-11-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
| CN101452824B (en) * | 2007-12-05 | 2012-07-18 | 硅电子股份公司 | Wet-chemistry semiconductor-chip treatment method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115488095A (en) * | 2022-08-11 | 2022-12-20 | 复旦大学 | Ozone cleaning method and device for silicon wafer |
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