CN107141456A - A kind of naphthalimide thiophene cyano vinyl polymer and preparation method and application - Google Patents
A kind of naphthalimide thiophene cyano vinyl polymer and preparation method and application Download PDFInfo
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Abstract
The invention discloses a kind of naphthalimide thiophene cyano vinyl polymer and preparation method and application.The structural formula of the polymer is shown in formula I.The polymer has strong interchain interaction, and its structure is rigid planar structure.The material has stronger ultravioletvisible absorption and good thermal stability, relatively low level structure is conducive to carrier to inject, it can be used for preparing the bipolarity organic field effect tube with superior performance, obtained device has very high hole mobility (μh) and on-off ratio, μhUp to 6.41 × 10‑3cm2V‑1s‑1, on-off ratio is 102- 103, with higher electron mobility (μe)(μeUp to 4.82 × 10‑2cm2V‑ 1s‑1), have broad application prospects.
Description
Technical field
The invention belongs to organic semiconducting materials technical field, and in particular to a kind of naphthalimide thiophene cyano vinyl polymerization
Thing and preparation method and application.
Background technology
Organic field effect tube is exactly the device of having chance with that the electric current between source-drain electrode is controlled by the voltage of grid, with
Organic semiconducting materials are used as carrier blocking layers.High performance organic field effect tube has broad application prospects, it
Successful application in fields such as smart card, sensor, electronic radio frequency tags, large screen display and integrated circuits can necessarily promote
Enter the technological innovation of the numerous areas such as information, the energy, life, far-reaching shadow will be produced to economic development and social progress
Ring, compared with traditional inorganic material, the characteristics of organic semiconducting materials have following several respects:1) raw material is readily obtained and closed
Into technique it is simple the advantages of, 2) there is the Modulatory character and good elasticity and pliability of physicochemical properties, 3 again) it is available
Solwution method is processed, so as to provide possibility for extensive manufacture lightweight, flexible electronic device.Therefore, organic effect
The research of crystal is had become by R&D institution and the extensive concern of researcher for its performance and structure correlative study
One of focus of organic electronics research field.
Organic semiconductor layer active material used in organic field effect tube can be to include machine small molecule and polymer
Semi-conducting material etc., polymer semiconducting material has that easily prepared, light weight, good film-forming property, pliability be good, elasticity is good, and soft
Property substrate there is good compatibility so that the electronics device based on polymer research is as organic electronics
Study hotspot.In recent years, polymer field effect transistor device performance research achieves breakthrough progress Persson,
N.E.;Chu,P.-H.;McBride,M.;Grover,M.;Reichmanis,E.,Nucleation,Growth,and
Alignment of Poly(3-hexylthiophene)Nanofibers for High-Performance
OFETs.Accounts of Chemical Research 2017.;James,D.I.;Wang,S.;Ma,W.;
S.;Meng,X.;Persson,P.;Fabiano,S.;Crispin,X.;Andersson,M.R.;Berggren,M.;Wang,
E.,High-Performance Hole Transport and Quasi-Balanced Ambipolar OFETs Based
on D-A-A Thieno-benzo-isoindigo Polymers.Adv.Electron.Mater.2016,2(4),
1500313.;Luo,C.;Kyaw,A.K.K.;Perez,L.A.;Patel,S.;Wang,M.;Grimm,B.;Bazan,G.C.;
Kramer,E.J.;Heeger,A.J.General Strategy for Self-Assembly of Highly Oriented
Nanocrystalline Semiconducting Polymers with High Mobility.Nano Lett.2014,14,
2764-2771;Kim,G.;Kang,S.-J.;Dutta,G.K.;Han,Y.-K.;Shin,T.J.;Noh,Y.-Y.;Yang,C.A
Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4cm2/V·s
That Substantially Exceeds Benchmark Values for Amorphous Silicon
Semiconductors.J.Am.Chem.Soc.2014,136,9477-9483).According to result of study at this stage, accordingly
The development of semi-conducting material and device technology of preparing, the application prospect of polymer field effect transistor device will be more wide.So
And, current existing polymer semiconducting material still can not meet reality as the stability of the device of semiconductor layer material
Application environment, so, design synthesized high-performance, the good semi-conducting material of stability becomes the top priority of researcher.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of naphthalimide thiophene cyano vinyl polymer
And preparation method and application.
The first object of the present invention there is provided a kind of naphthalimide thiophene cyano vinyl polymer, its general structure such as formula
Shown in I:
In the Formulas I, R is C1-C100Straight or branched alkyl;
N=10-1000.
Specifically, R is C1-C12Straight or branched alkyl;
N=20-500, more specifically, n can be 25-50, then concretely 29-42, more specifically can be 29-40;
The R can be 2- octyldodecyls or 2- decyl myristyls.
The second object of the present invention is the provision of naphthalimide thiophene cyano vinyl polymer shown in a kind of formula I
Method.
As shown in figure 1, this method comprises the following steps:In an inert atmosphere, by shown in compound shown in Formula II and formula III
Compound carries out Stille coupling reactions under conditions of palladium catalyst and part are present, and reaction, which is finished, to be obtained shown in the Formulas I
Polymer;
In the Formula II, defining for R is identical with the definition of R in the Formulas I.
The palladium catalyst is three (dibenzalacetone) two palladium or tetrakis triphenylphosphine palladium;
The part is three (o-tolyl) phosphines or triphenylphosphine.
Compound described in the Formula II, the mol ratio of compound, palladium catalyst and part shown in formula III are 1.0:0.95~
1.05:0.01~0.10:0.02~0.60, concretely 1.0:1.0:0.03:0.27.
The inert atmosphere concretely argon gas atmosphere.
In the Stille coupling reactions step, reaction temperature is 60~150 DEG C, concretely 110 DEG C;
Reaction time is 24~48 hours.
The Stille coupling reactions are carried out in organic solvent.The organic solvent concretely toluene or chlorobenzene.
The above method may also include the steps of:After the Stille coupling reactions step, reaction system is cooled down,
The mixture for adding methanol and hydrochloric acid is stirred at room temperature, is filtered.Gained solid is extracted with apparatus,Soxhlet's, and extraction solvent is successively
Methanol, acetone, n-hexane extracting, are finally extracted and obtained with chloroform.
In the mixture of the methanol and hydrochloric acid, the concentration of hydrochloric acid concretely 6M;The volume ratio of methanol and hydrochloric acid is specific
Can be 20:1.It is described the step of stir at room temperature in, time of stirring concretely 2h;In the extraction steps, every kind of extracting
The extraction times of solvent concretely 24h.
The third object of the present invention is the provision of a kind of naphthalimide thiophene cyano vinyl polymer recited above and existed
Prepare the application in organic field effect tube and constitute the material of semiconductor layer and imitated for the organic field of polymer shown in the Formulas I
Answer transistor.
Beneficial effects of the present invention are as follows:
1) naphthalimide thiophene cyano vinyl polymer shown in the Formulas I that the present invention is provided has strong interchain interaction,
Its structure is the easily close intermolecular accumulation of formation in rigid planar structure, film, and film stack has stronger long-range order,
Solution and film are respectively provided with stronger ultraviolet-ray visible absorbing, and the material has good thermal stability, relatively low level structure
Be conducive to carrier to inject, with stronger ultraviolet-ray visible absorbing and good thermal stability, can be used for prepare have compared with
High performance bipolarity organic field effect tube, obtained device has very high hole mobility (μh) and on-off ratio, μhMost
A height of 6.41 × 10-3cm2V-1s-1, on-off ratio is 102- 103, with higher electron mobility (μe)(μeUp to 4.82 ×
10-2cm2V-1s-1), have broad application prospects.
2) synthesis step for preparing naphthalimide thiophene cyano vinyl polymer that the present invention is provided is simple, efficient, reaction
High income, post processing is simple, and the degree of polymerization is high, is adapted to extensive synthesis.
Brief description of the drawings
Fig. 1 be naphthalimide thiophene cyano vinyl polymer of the present invention be compound of formula I synthetic route chart;
Fig. 2 is Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 synthetic route charts;
Fig. 3 is ultraviolet-visibles of the Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 in chloroform soln
Abosrption spectrogram;
Fig. 4 is the uv-visible absorption spectra of Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 films
Figure;
Fig. 5 is Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 thermal gravimetric analysis curve figure;
Fig. 6 is Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 cyclic voltammetry curve maps;
Fig. 7 is the atomic force of Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 under different annealing temperature
Microscope shape appearance figure;
Fig. 8 is Inventive polymers PNCNTVT-8 and polymer P NCNTVT-10 transistor arrangement schematic diagram;
Fig. 9 is that Inventive polymers PNCNTVT-8 (schemes a, schemes b, scheme c, figure is d) and polymer P NCNTVT-10 (schemes e, figure
F, schemes g, schemes the transfer curve figure and output curve diagram of h) field-effect transistor.
Embodiment
With reference to specific embodiment, the present invention is further elaborated, but the present invention is not limited to following examples.Institute
It is conventional method unless otherwise instructed to state method.The raw material can be obtained from open commercial sources unless otherwise instructed.
Embodiment in following embodiments can be further combined or replace, and embodiment is only that the present invention is preferable to carry out
Example is described, and not the spirit and scope of the present invention are defined, on the premise of design philosophy of the present invention is not departed from, this
The various changes and modifications that professional and technical personnel makes to technical scheme in field, belong to the protection model of the present invention
Enclose.
The structural formula such as formula III of double (5- (tin trimethyl) thiophene -2- bases) acrylonitrile of cis- 2,3- used in following embodiments
It is shown:
The synthesis of embodiment 1, polymer P NCNTVT-8
By double (2- octyldodecyls) benzo [lmn] [3,8] phenanthroline-1,3,6 of the bromo- 2,7- of 4,9- bis-,
Double (5- (tin trimethyl) thiophene -2- bases) third of cis- 2,3- shown in 8 (2H, 7H)-tetrones (0.20mmol, 197.01mg) and formula III
Alkene nitrile (0.20mmol, 108.60mg), palladium catalyst is three (dibenzalacetone) two palladium (6mg, 0.0065mmol), part three
(o-tolyl) phosphine (16.2mg, 0.053mmol) and organic solvent chlorobenzene (6.0mL) are added in reaction bulb, are entered in argon gas
Three freezing-pumping-thaw cycles deoxygenations of row, after reactant mixture is heated to carry out Stille under 110 argon DEG C gas shieldeds it is even
Connection reaction 24h.After cooling, 200mL methanol/6M HCl mixtures (v/v 20 is added:1) 2h, is stirred at room temperature, is filtered.Gained
Solid is extracted with apparatus,Soxhlet's.Extraction solvent is methanol successively, acetone, n-hexane, respectively extract 24h, finally uses chloroform
Extraction obtains 172.53 milligrams of subject polymer, yield 82.74%.
Structural characterization data are as follows:
Molecular weight:GPC:Mn=42.00kDa, Mw=94.37kDa, PDI=2.24, n are 40.
Elementary analysis:C65H91N3O4S2:Calculated value:C 74.88,H 8.80,N 4.03.;Probe value:C 74.26,H
8.56,N 4.05.
Understand that the compound structure is correct by analysis above, be polymer P NCNTVT-8.
Embodiment 2, polymer P NCNTVT-10
By double (2- decyls myristyl) benzo [lmn] [3,8] phenanthroline-1,3,6 of the bromo- 2,7- of 4,9- bis-,
Double (5- (tin trimethyl) thiophene -2- bases) third of cis- 2,3- shown in 8 (2H, 7H)-tetrones (0.20mmol, 219.46mg) and formula III
Alkene nitrile (0.20mmol, 108.60mg), three (dibenzalacetone) two palladium (6mg, 0.0065mmol), three (o-tolyl) phosphines
(16.2mg, 0.053mmol) and chlorobenzene (6.0mL) are added in reaction bulb, and three freezing-pumping-defrostings are carried out in argon gas
Circulate deoxygenation, after reactant mixture be heated to 110 argon DEG C gas shieldeds carry out Stille coupling reactions 24h.After cooling, add
200mL methanol/6M HCl mixtures (v/v 20:1) 2h, is stirred at room temperature, is filtered.Gained solid is extracted with apparatus,Soxhlet's.
Extraction solvent is methanol successively, acetone, n-hexane, respectively extract 24h, is finally extracted with chloroform and obtains subject polymer
182.26 milligram, yield 78.91%.
Structural characterization data are as follows:
Molecular weight:GPC:Mn=31.40kDa, Mw=66.61kDa, PDI=2.12, n are 29.
Elementary analysis:Elementary analysis:C73H107N3O4S2, calculated value:C 75.93,H 9.34,N 3.64;Probe value:C
75.38,H 9.07,N 3.68。
Learn that the compound structure is correct from above, be polymer P NCNTVT-10.
The spectrum property experiment of embodiment 3, polymer P NCNTVT-8 and polymer P NCNTVT-10
Fig. 3 and Fig. 4 are respectively polymer P NCNTVT-8 and polymer P NCNTVT-10 prepared by embodiment 1 and embodiment 2
Chloroform soln (concentration is 0.005mmol/L) and film UV-visible absorption spectrum, from figure 3, it can be seen that
There are two absorption bands in such polymer, prominent absorption bands are high energy band, and it is absorbed at 360 to 470 nanometers, secondary absorption band
For low-energy zone, 480 to 750 nanometers are absorbed as.Stronger low-energy zone, which is absorbed in explanation polymer molecule, has stronger D-A mutual
Effect.As shown in Figure 4, the absorption curve of film is compared with there is a certain degree of red shift in solution.
The thermal property experiment of embodiment 4, polymer P NCNTVT-8 and polymer P NCNTVT-10
Fig. 5 is polymer P NCNTVT-8 and polymer P NCNTVT-10 thermal gravimetric analysis curve, as seen from Figure 5, is gathered
Compound PNCNTVT-8 and polymer P NCNTVT-10 heat decomposition temperature are both greater than 400, DEG C explanation polymer P NCNTVT-8 and
Polymer P NCNTVT-10 has preferable heat endurance.
The chemical property experiment of embodiment 5, polymer P NCNTVT-8 and polymer P NCNTVT-10
It is illustrated in figure 6 polymer P NCNTVT-8 and polymer P NCNTVT-10 cyclic voltammetry curve.
Electrolytic cell uses three-electrode system, and wherein platinum, platinum filament, silver/silver chlorate are respectively working electrode, to electrode and reference
Electrode, tetrabutyl ammonium hexafluorophosphate is supporting electrolyte.Scanning range is -1.5~1.4 volts (vs.Ag/AgCl), scanning speed
Rate is 100 millivolts per second.Curve show polymer P NCNTVT-8 and polymer P NCNTVT-10 initial reduction current potential be about-
0.48 and -0.44 volt, the lumo energy for thus estimating them is about -3.92 and -3.96 electron-volts.According to EHOMO=ELUMO-
Eg optIt is -5.53 and -5.57 electron-volts that calculating, which obtains their HOMO energy levels,.
Embodiment 6
It is illustrated in figure 7 the atomic force microscopy of polymer P NCNTVT-8 and polymer P NCNTVT-10 at different temperatures
Mirror shape appearance figure, it can be seen that fibre-like film structure that is that two polymer can form densification and being cross-linked with each other,
Show there is stronger intermolecular interaction between polymer molecule.
The field-effect transistor of embodiment 7, polymer P NCNTVT-8 and polymer P NCNTVT-10 is prepared and performance.
Fig. 8 is polymer P NCNTVT-8 and polymer P NCNTVT-10 organic field effect tube structural representation.
As shown in figure 8, prepared by top-gated-bottom contact (TGBC) device:Jin Yuan-drain electrode, OFET are prepared using photoetching technique
The channel width (W) of device is 1400 μm, and channel length (L) is 80 μm, and width is 8800 μm.Dielectric substrate is 300nm glass
Glass substrate.Substrate passes through a series of cleanings of acetone, deionized water and EtOH Sonicate, is then modified in the glass substrate of drying
One layer of OTS self-assembled monolayer.It is dichloro-benzenes that the solution used in semiconductor layer is prepared by spin coating, and concentration is 10mg/mL, gained half
The thickness of conductor layer is 100nm.Then film sample is placed in 120 DEG C of annealing 5min in glove box.Then, one layer of PMMA dielectric layer
Prepared by spin coating 60mg/mL PMMA butyl acetates solution, selected PMMA weight average molecular weight is 1000KDa, dielectric
Constant k is about 2.05.Then, by whole device be placed in 80 DEG C of vacuum drying chamber toast 30min it is molten to remove butyl acetate
Agent.Finally, the aluminium for a layer thickness about 100nm being deposited on PMMA dielectric layers is used as gate electrode.In nitrogen, prepared TGBC
Device tests field effect behavior on the SCS semi-conductor test instruments of Keithley 4200.
Fig. 9 is the transfer curve of the field-effect transistor prepared by polymer P NCNTVT-8 and polymer P NCNTVT-10
And curve of output, carrier mobility can calculate by equation:
IDS=(W/2L) Ciμ(VG–VT) 2 (saturation regions, VDS=VG–VT)
Wherein, IDSFor drain current, μ is carrier mobility, VGFor grid voltage, VTFor threshold voltage, W is that raceway groove is wide
Degree, L is channel length, CiFor insulation body capacitance (Ci=7.5 × 10-9Method is every square centimeter).Utilize (IDS, sat)1/2To VGMake
Figure, and make linear regression, can the slope of the thus tropic extrapolate carrier mobility (μ), by the tropic and the tie point of X-axis
Try to achieve VT.Mobility can be calculated according to formula from the slope of transfer curve, on-off ratio can by Fig. 9 source-drain currents maximum
The ratio between value and minimum value are drawn.The device performance of the polymer field effect transistor of preparation is as shown in table 1.
The device performance of table 1, field-effect transistor based on polymer P NCNTVT-8 and polymer P NCNTVT-10
Multiple organic effect crystal have been constructed by semiconductor layer of polymer P NCNTVT-8 and polymer P NCNTVT-10
Tube device, wherein PNCNTVT-8 hole mobilities (μh) and on-off ratio (μhUp to 6.41 × 10-3cm2V-1s-1, on-off ratio is
102-103), electron mobility (μe)(μeUp to 4.82 × 10-2cm2V-1s-1)。
The naphthalimide thiophene cyano vinyl polymer provided by the analysis of experimental results of above performance, the present invention
It is the excellent polymer semiconducting material of a class.The present invention is not limited to the two naphthalimide thiophene cyanogen enumerated in the present embodiment
Base ethene polymers, can change different substituent Rs to obtain a series of new polymers, because length is limited, not exist
This is listed one by one.
The synthesis step that the present invention is provided is simply efficient, and reaction yield is high, and post processing is simple, and the degree of polymerization is high, is suitable for big rule
Mould is synthesized.Relation be- tween structure and properties and design, synthesized high-performance of the result of study for Study Polymer Melts semi-conducting material
Polymer semiconducting material has directive significance.
Claims (10)
1. polymer shown in Formulas I,
In the Formulas I, R is C1-C100Straight or branched alkyl;
N=10-1000.
2. polymer according to claim 1, it is characterised in that:In the Formulas I, R is C1-C12Straight or branched alkane
Base;
N=20-500;
The R is 2- octyldodecyls or 2- decyl myristyls.
3. a kind of method for preparing polymer shown in Formulas I described in claim 1, comprises the following steps:
In an inert atmosphere, condition compound shown in compound shown in Formula II and formula III existed in palladium catalyst and part
Lower progress Stille coupling reactions, reaction, which is finished, obtains polymer shown in the Formulas I;
In the Formula II, defining for R is identical with the definition of R in the Formulas I.
4. method according to claim 3, it is characterised in that:The palladium catalyst be three (dibenzalacetone) two palladium or
Tetrakis triphenylphosphine palladium;
The part is three (o-tolyl) phosphines or triphenylphosphine.
5. the method according to claim 3 or 4, it is characterised in that:Compound described in the Formula II, chemical combination shown in formula III
The mol ratio of thing, palladium catalyst and part is 1.0:0.95~1.05:0.01~0.10:0.02~0.60 or 1.0:1.0:
0.03:0.27。
6. according to any described method in claim 3-5, it is characterised in that:In the Stille coupling reactions step, instead
It is 60~150 DEG C or 110 DEG C to answer temperature;
Reaction time is 24~48 hours;
The inert atmosphere is argon gas atmosphere.
7. according to any described method in claim 3-6, it is characterised in that:The Stille coupling reactions are in organic solvent
It is middle to carry out.
8. method according to claim 7, it is characterised in that:The organic solvent is toluene or chlorobenzene.
9. application of the polymer in organic effect transistor is prepared described in any Formulas I of claim 1 or 2.
10. a kind of organic field effect tube, it is characterised in that:In the organic field effect tube, semiconductor layer is constituted
Material is polymer shown in any Formulas I of claim 1 or 2.
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CN111285842A (en) * | 2020-02-18 | 2020-06-16 | 中国科学院化学研究所 | Trifluoromethyl thiophene ethylene thiophene donor, polymer and application thereof |
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WO2014077590A1 (en) * | 2012-11-13 | 2014-05-22 | 경상대학교산학협력단 | Polymer comprising novel naphthalene diimide and organic electronic device using same |
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WO2014077590A1 (en) * | 2012-11-13 | 2014-05-22 | 경상대학교산학협력단 | Polymer comprising novel naphthalene diimide and organic electronic device using same |
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