CN107140968B - High-temperature lead-free piezoelectric ceramic and preparation method thereof - Google Patents
High-temperature lead-free piezoelectric ceramic and preparation method thereof Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title description 14
- 230000010287 polarization Effects 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000009768 microwave sintering Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000498 ball milling Methods 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 20
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 15
- 230000002194 synthesizing effect Effects 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 11
- 229910002915 BiVO4 Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 10
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 7
- 238000009694 cold isostatic pressing Methods 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 238000005469 granulation Methods 0.000 claims description 5
- 230000003179 granulation Effects 0.000 claims description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000013329 compounding Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000028161 membrane depolarization Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000003786 synthesis reaction Methods 0.000 abstract description 2
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- 229910002902 BiFeO3 Inorganic materials 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
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- 229910052573 porcelain Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
A high-temperature lead-free piezoelectric ceramic is characterized by having a general composition formula: (1-x)Bi0.96La0.06FeO3‑xBa0.97(Na1/ 2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4(ii) a WhereinxRepresents a molar fraction of 0.05<x<0.4. The ceramic is prepared by combining stepwise synthesis, isostatic pressing, microwave sintering and polarization methods with different voltage types, and the series of products are environment-friendly, have good stability, excellent piezoelectric property and high temperature stability, have the depolarization temperature of more than 500 ℃, and are suitable for being applied in the high-temperature field.
Description
Technical Field
The invention relates to a lead-free piezoelectric ceramic material applied in the high temperature field, in particular to an ABO3Bi of perovskite structure0.96La0.06FeO3A lead-free piezoelectric ceramic with high temperature stability and a preparation method thereof.
Background
The high-temperature piezoelectric sensor has the advantages of simple structure, small volume, quick response, long service life and external interference
Small size, and can be widely used in atomic energy, aerospace, automobile, metallurgy, petrochemical industry, etc
And measuring dynamic and impact. With the rapid development of these industrial fields, the operating environment of these electronic devices is very harsh, and higher requirements are put on the upper limit of the operating temperature of the piezoelectric material. At present, the high-temperature piezoelectric material and the device mainly use single crystal materials, have complex production process and high price and are not beneficial to large-scale application. The piezoelectric ceramic can be prepared into devices in any shapes, and has simple preparation process and lower cost. Therefore, the development of high-temperature piezoelectric ceramic materials having excellent properties has been urgently required.
BiFeO3The base piezoelectric ceramic has excellent piezoelectric performance and high-temperature stability, is a green and environment-friendly lead-free material system, and has wide application prospect in the field of high-temperature piezoelectric sensors. Due to BiFeO3Bi for sintering system ceramics3+Volatile, Fe3+Ion valence change (Fe)3+→Fe2+) The oxygen vacancy is generated, so that the room-temperature leakage current is large, and the polarization is difficult, so that the application of the system ceramic in the field of piezoelectric materials is less. The defect is BiFeO3The important characteristics of the base piezoelectric ceramics are also key factors for determining the piezoelectric ferroelectric performance. The variation of chemical bonds between the defects and adjacent ions, the coupling between the defects and electric domains, and the internal electric field formed by the defects have obvious influence on the insulativity, the piezoelectric property and the temperature characteristic of the material. Meanwhile, doping effects and atmosphere sintering are closely related to the generation of defects. However, these defects are unstable at high temperatures and are unstable to BiFeO3The piezoelectric properties and high temperature stability of the base piezoelectric ceramics are adversely affected. Therefore, the functional effect of the defects is utilized to optimize the defect structure and improve the piezoelectric property, the temperature characteristic and the high-temperature conductance of the ceramic, and the method is a new technical support in the current piezoelectric ceramic development.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-temperature lead-free piezoelectric ceramic and a preparation method thereof. The ceramic material has excellent piezoelectric performance, high temperature stability and depolarization temperature not lower than 500 ≥oC. Environment-friendly, good stability, good piezoelectric property, and is suitable for 500oC or above. The method has the advantages of simple preparation process and low cost.
The technical scheme for realizing the purpose of the invention is as follows:
a high-temperature lead-free piezoelectric ceramic has a general composition formula:
(1-x)Bi0.96La0.06FeO3-xBa0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4(ii) a WhereinxRepresents a molar fraction of 0.05<x<0.4。
The preparation method of the high-temperature lead-free piezoelectric ceramic comprises the following steps:
(1) first step with electronic grade Bi2O3、Fe2O3And La2O3As raw material, according to the stoichiometric formula Bi0.96La0.06FeO3Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing Bi with a three-way distortion structure in a high-alumina crucible at 720 ℃ for 2 hours0.96La0.06FeO3A main crystalline phase;
(2) second step with electronic grade Ta2O5、BaCO3、CuO、Na2CO3And Al2O3As raw material, according to the stoichiometric formula Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3Preparing materials; ball milling for 12 hours by using absolute ethyl alcohol as a medium, drying, and pre-synthesizing Ba with a tetragonal distortion structure in a high-aluminum crucible at 1050 ℃ for 2 hours0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3A main crystalline phase;
(3) the third step is to use electronic grade Bi2O3And V2O5As raw material, according to the stoichiometric formula BiVO4Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing BiVO in a high-aluminum crucible at 550 ℃ for 2 hours4A main crystalline phase;
(4) the fourth step is to synthesize the synthesized Bi0.96La0.06FeO3、Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3、BiVO4Powder according to (1-x)Bi0.96La0.06FeO3-xBa0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3
+0.05BiVO4Stoichiometric compounding of whereinxRepresents a molar fraction of 0.05<x<0.4);
(5) Ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and adding 5% PVA for granulation; cold isostatic pressing under 150MPa pressure;
(6) microwave sintering, keeping the temperature at 850-;
(7) and (3) polarization, namely applying 10 periodic sawtooth wave circular polarization with a polarization electric field of 5000V/mm and a frequency of 1Hz, and then applying 15 periodic square wave circular polarization with a polarization electric field of 6000V/mm and a frequency of 1Hz and a polarization temperature of 100 ℃.
The method is carried out by adding BiFeO3The A position of the compound is added with 0.06 of La to form stable three-side structure distortion transition phase boundary composition Bi0.96La0.06FeO3Adding Ba of low tetragonal distortion structure0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3(wherein the A site is added with a complex small ionic radius (Na)1/2Al1/2)2+Forming a mesoscopic tetragonal structure), constructing a trigonal-tetragonal quasi homomorphic phase boundary, and superposing the mesoscopic structure of the nano-polarity micro-region to generate a charged domain wall structure and amplify piezoelectric response;
BiVO is added simultaneously in the method4Sintering is assisted, and the volatilization of Bi at the A position is compensated; and the sawtooth wave-square wave high-voltage cyclic polarization is combined to induce the formation of defective dipoles, and simultaneously, a domain wall nail-removing effect is generated, a dipole polarization enhancement effect and a stable electric domain effect corresponding to the polarity can be generated, so that the adverse effect of high-temperature charged defects is overcome, and a positive effect can be generated, and therefore, the piezoelectric performance and the high-temperature stability can be improved simultaneously.
The method adopts step-by-step synthesis and microwave sintering, and has the advantages of low sintering temperature, short heat preservation time, fine and uniform crystal grains and high density.
The ceramic material has excellent piezoelectric performance, high temperature stability and depolarization temperature not lower than 500 ≥oC. Environment-friendly, good stability, good piezoelectric property, and is suitable for 500oC or above. The method has the advantages of simple preparation process and low cost.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples, which are not intended to limit the invention thereto.
Example 1:
the preparation comprises the following components: 0.96Bi0.96La0.06FeO3-0.04Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4The high-temperature lead-free piezoelectric ceramic.
The preparation method comprises the following steps:
(1) first step with electronic grade Bi2O3、Fe2O3And La2O3As raw material, according to the stoichiometric formula Bi0.96La0.06FeO3Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing Bi with a three-way distortion structure in a high-alumina crucible at 720 ℃ for 2 hours0.96La0.06FeO3A main crystalline phase;
(2) second step with electronic grade Ta2O5、BaCO3、CuO、Na2CO3And Al2O3As raw material, according to the stoichiometric formula Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3Preparing materials; ball milling for 12 hours by using absolute ethyl alcohol as a medium, drying, and pre-synthesizing Ba with a tetragonal distortion structure in a high-aluminum crucible at 1050 ℃ for 2 hours0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3A main crystalline phase;
(3) the third step is to use electronic grade Bi2O3And V2O5As raw material, according to the chemical formulaQuantitative BiVO4Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing BiVO in a high-aluminum crucible at 550 ℃ for 2 hours4A main crystalline phase;
(4) the fourth step is to synthesize the synthesized Bi0.96La0.06FeO3、Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3、BiVO4Powder of 0.96Bi0.96La0.06FeO3-0.04Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4Proportioning in a stoichiometric mode;
(5) ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and adding 5% PVA for granulation; cold isostatic pressing under 150MPa pressure;
(6) microwave sintering, keeping the temperature at 850 ℃ for 20 minutes, sintering into porcelain, and plating silver electrodes on two sides;
(7) and (3) polarization, namely applying 10 sawtooth wave circular polarization with a polarization electric field of 5000V/mm and a frequency of 1Hz, and then applying 15 square wave circular polarization with a polarization electric field of 6000V/mm, a frequency of 1Hz and a polarization temperature of 100 ℃.
The piezoelectric properties of the piezoelectric ceramics were measured by IRE standard after the obtained sample was left to stand for 24 hours. The performance measurements are as follows:
d 33(pC/N) | Qm | k p | εr | tanδ(%) | T d(°C) | T c(°C) |
142 | 165 | 0.28 | 582 | 1.05 | 587 | 673。 |
example 2:
the preparation comprises the following components: 0.9Bi0.96La0.06FeO3-0.1Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4The high-temperature lead-free piezoelectric ceramic.
The preparation method comprises the following steps:
(1) first step with electronic grade Bi2O3、Fe2O3And La2O3As raw material, according to the stoichiometric formula Bi0.96La0.06FeO3Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing Bi with a three-way distortion structure in a high-alumina crucible at 720 ℃ for 2 hours0.96La0.06FeO3A main crystalline phase;
(2) second step with electronic grade Ta2O5、BaCO3、CuO、Na2CO3And Al2O3As raw material, according to the stoichiometric formula Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3Preparing materials; ball milling for 12 hours by using absolute ethyl alcohol as a medium, drying, and pre-synthesizing Ba with a tetragonal distortion structure in a high-aluminum crucible at 1050 ℃ for 2 hours0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3A main crystalline phase;
(3) the third step is to use electronic grade Bi2O3And V2O5As raw material, according to the stoichiometric formula BiVO4Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing BiVO in a high-aluminum crucible at 550 ℃ for 2 hours4A main crystalline phase;
(4) the fourth step is to synthesize the synthesized Bi0.96La0.06FeO3、Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3、BiVO4Powder of 0.9Bi0.96La0.06FeO3-0.1Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4Proportioning in a stoichiometric mode;
(5) ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and adding 5% PVA for granulation; cold isostatic pressing under 150MPa pressure;
(6) microwave sintering, keeping the temperature at 880 ℃ for 20 minutes, sintering into porcelain, and plating silver electrodes on two sides;
(7) and (3) polarization, namely applying 10 sawtooth wave circular polarization with a polarization electric field of 5000V/mm and a frequency of 1Hz, and then applying 15 square wave circular polarization with a polarization electric field of 6000V/mm, a frequency of 1Hz and a polarization temperature of 100 ℃.
The piezoelectric properties of the piezoelectric ceramics were measured by IRE standard after the obtained sample was left to stand for 24 hours.
The performance measurements are as follows:
d 33(pC/N) | Qm | k p | εr | tanδ(%) | T d(°C) | T c(°C) |
172 | 109 | 0.33 | 625 | 1.16 | 523 | 638。 |
example 3:
the preparation comprises the following components: 0.88Bi0.96La0.06FeO3-0.12Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4The high-temperature lead-free piezoelectric ceramic.
The preparation method comprises the following steps:
(1) first step with electronic grade Bi2O3、Fe2O3And La2O3As raw material, according to the stoichiometric ratioFormula Bi0.96La0.06FeO3Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing Bi with a three-way distortion structure in a high-alumina crucible at 720 ℃ for 2 hours0.96La0.06FeO3A main crystalline phase;
(2) second step with electronic grade Ta2O5、BaCO3、CuO、Na2CO3And Al2O3As raw material, according to the stoichiometric formula Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3Preparing materials; ball milling for 12 hours by using absolute ethyl alcohol as a medium, drying, and pre-synthesizing Ba with a tetragonal distortion structure in a high-aluminum crucible at 1050 ℃ for 2 hours0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3A main crystalline phase;
(3) the third step is to use electronic grade Bi2O3And V2O5As raw material, according to the stoichiometric formula BiVO4Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing BiVO in a high-aluminum crucible at 550 ℃ for 2 hours4A main crystalline phase;
(4) the fourth step is to synthesize the synthesized Bi0.96La0.06FeO3、Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3、BiVO4Powder of 0.88Bi0.96La0.06FeO3-0.12Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4Proportioning in a stoichiometric mode;
(5) ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and adding 5% PVA for granulation; cold isostatic pressing under 150MPa pressure;
(6) microwave sintering, wherein the temperature is kept at 890 ℃ for 20 minutes, the ceramic is sintered, and electrodes are plated with silver on two sides;
(7) and (3) polarization, namely applying 10 sawtooth wave circular polarization with a polarization electric field of 5000V/mm and a frequency of 1Hz, and then applying 15 square wave circular polarization with a polarization electric field of 6000V/mm, a frequency of 1Hz and a polarization temperature of 100 ℃.
The piezoelectric properties of the piezoelectric ceramics were measured by IRE standard after the obtained sample was left to stand for 24 hours.
The performance measurements are as follows:
d 33(pC/N) | Qm | k p | εr | tanδ(%) | T d(°C) | T c(°C) |
179 | 101 | 0.36 | 711 | 1.12 | 518 | 597。 |
the contents of the present invention will be further clearly understood from the examples given above, but they are not intended to limit the present invention.
Claims (2)
1. A high-temperature lead-free piezoelectric ceramic is characterized by comprising the following general formula:
(1-x)Bi0.96La0.06FeO3-xBa0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4(ii) a WhereinxRepresents a molar fraction of 0.05<x<0.4。
2. The method for preparing a high-temperature lead-free piezoelectric ceramic according to claim 1, comprising the steps of:
(1) first step with electronic grade Bi2O3、Fe2O3And La2O3As raw material, according to the stoichiometric formula Bi0.96La0.06FeO3Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing Bi with a three-way distortion structure in a high-alumina crucible at 720 ℃ for 2 hours0.96La0.06FeO3A main crystalline phase;
(2) second step with electronic grade Ta2O5、BaCO3、CuO、Na2CO3And Al2O3As raw material, according to the stoichiometric formula Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3Preparing materials; ball milling for 12 hours by using absolute ethyl alcohol as a medium, drying, and pre-synthesizing Ba with a tetragonal distortion structure in a high-aluminum crucible at 1050 ℃ for 2 hours0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3A main crystalline phase;
(3) the third step is to use electronic grade Bi2O3And V2O5As raw material, according to the stoichiometric formula BiVO4Preparing materials; ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and pre-synthesizing BiVO in a high-aluminum crucible at 550 ℃ for 2 hours4A main crystalline phase;
(4) the fourth step is to synthesize the synthesized Bi0.96La0.06FeO3、Ba0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3、BiVO4Powder according to (1-x)Bi0.96La0.06FeO3-xBa0.97(Na1/2Al1/2)0.03(Cu1/3Ta2/3)O3+0.05BiVO4Stoichiometric compounding of whereinxRepresents a molar fraction of 0.05<x<0.4;
(5) Ball milling for 12 hours by taking absolute ethyl alcohol as a medium, drying, and adding 5% PVA for granulation; cold isostatic pressing under 150MPa pressure;
(6) microwave sintering, keeping the temperature at 850-;
(7) and (3) polarization, namely applying 10 periodic sawtooth wave circular polarization with a polarization electric field of 5000V/mm and a frequency of 1Hz, and then applying 15 periodic square wave circular polarization with a polarization electric field of 6000V/mm and a frequency of 1Hz and a polarization temperature of 100 ℃.
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