CN107134620A - A kind of K-band Waveguide-microbelt transition apparatus - Google Patents
A kind of K-band Waveguide-microbelt transition apparatus Download PDFInfo
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- CN107134620A CN107134620A CN201710437379.6A CN201710437379A CN107134620A CN 107134620 A CN107134620 A CN 107134620A CN 201710437379 A CN201710437379 A CN 201710437379A CN 107134620 A CN107134620 A CN 107134620A
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- 230000007704 transition Effects 0.000 title claims abstract description 168
- 239000000523 sample Substances 0.000 claims abstract description 51
- 238000003780 insertion Methods 0.000 claims abstract description 9
- 230000037431 insertion Effects 0.000 claims abstract description 9
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- 239000000758 substrate Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
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- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 230000007547 defect Effects 0.000 description 1
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- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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Abstract
The invention discloses a kind of K-band Waveguide-microbelt transition apparatus, Waveguide-microbelt transition apparatus dismounting inconvenience, the technical problem that sealing is poor, electromagnetic wave loss is big in the prior art are solved.The K-band Waveguide-microbelt transition apparatus includes upper transition element and lower transition element, the upper transition element and lower transition element may be combined, input waveguide mouthful, micro-strip line chamber and output waveguide mouthful are provided with the upper transition element and lower transition element, the micro-strip line chamber two ends are connected with the input waveguide mouthful and output waveguide mouthful respectively, and microstrip probe transition circuit is provided with the micro-strip line chamber.The present invention has insertion loss low, and return loss is high, and bandwidth, compact conformation, good airproof performance, cost is low, and size is small, it is easy to the advantages of processing.
Description
Technical field
The present invention relates to a kind of Waveguide-microbelt transition apparatus, and in particular to a kind of K-band Waveguide-microbelt transition apparatus.
Background technology
With MMIC (millimeter-wave monolithic microwave integrated circuit) device levels and MMCM (Microwave Multichip Module) assembling skills
The development of art, circuit system is gradually to the integrated development of whole plane, but in millimeter wave frequency band because some important millimeter waves are passive
Element such as antenna etc. still uses waveguide transmission mode, therefore planar circuit becomes the pass realized for system to the transitional technology of waveguide
One of key technology, and more extensive research is received, the main purpose of research is to seek a kind of low cost, low-loss, be easy to
The transition structure in the broadband of processing.
Transition and conversion structure between current rectangular waveguide and micro-strip, suspension micro-strip mainly has ladder Ridge Waveguide Transitions, to ridge
Fin-line transition, coupling probe transition.These transition structures can obtain good transition effect in 10%~20% bandwidth
Really.Wherein Ridge Waveguide Transitions processed complex, and build-up tolerance requirement is strict, the whole mistake of contact point pair between ridge and microstrip circuit
The performance impact for crossing circuit is very big, and pine can influence circuit performance excessively, and tension then damages microstrip circuit, and repeatability is poor, and dismounting
It is inconvenient.To, because fin line has various patterns, it is difficult to suppress all unwanted feedbacks, and ending in ridge fin-line transition
Input and output fin line provides a net resistance source impedance or load impedance under frequency, and this can make active device be in range of instability
, easily there is self-oscillation in domain.Common Waveguide-microbelt probe and whole microstrip circuit make on a single integrated circuit, due to
Probe is inserted in the upper shed of waveguide side wall causes the sealing of this transient mode poor.
The content of the invention
For the above-mentioned problems in the prior art, the invention provides a kind of K-band Waveguide-microbelt transition apparatus, if
Put and input waveguide mouthful, micro-strip line chamber and defeated are machined with the upper and lower transition element that may be combined, upper and lower transition element
Go out waveguide mouthful, micro-strip line chamber two ends are connected with input waveguide mouthful and output waveguide mouthful respectively, and micro-strip spy is provided with micro-strip line chamber
Pin transition circuit, a complete transition apparatus is formed after upper and lower transition element combination.
In order to achieve the above object, the technical proposal of the invention is realized in this way：
The present invention provides a kind of K-band Waveguide-microbelt transition apparatus, including upper transition element and lower transition element, it is described on
Transition element and lower transition element be may be combined, and input waveguide is provided with the upper transition element and lower transition element
Mouth, micro-strip line chamber and output waveguide mouthful, the micro-strip line chamber two ends are connected with the input waveguide mouthful and output waveguide mouthful respectively,
Microstrip probe transition circuit is provided with the micro-strip line chamber.
Further, the microstrip probe transition circuit includes being provided with microstrip line on medium substrate, the medium substrate, institute
State microstrip line left and right ends and be respectively connected with probe, high resistant line, the medium base are connected between the probe and the microstrip line
Plate left and right ends are provided with ground terminal.
Further, the microstrip probe transition circuit is bonded or is weldingly fixed in the lower transition element, the micro-strip
The probe of line left end is suspended in the input waveguide mouthful, and the probe of the microstrip line right-hand member is suspended in the output waveguide mouthful
In.
Further, the input waveguide mouthful and the opening direction of output waveguide mouthful are on the contrary, opening is located at the upper mistake respectively
Cross unit and lower transition element front and back sides；The input waveguide mouthful is parallel with output waveguide mouthful, is each perpendicular to the microstrip line
Chamber.
Further, input waveguide mouthful, upper micro-strip line chamber and upper output waveguide mouthful, institute are provided with the upper transition element
State and lower input waveguide mouthful, lower micro-strip line chamber and lower output waveguide mouthful are provided with lower transition element, the upper and lower input waveguide mouthful
It is combined, the upper and lower micro-strip line chamber is combined, the upper and lower output waveguide mouthful is combined.
Further, the upper input waveguide mouthful, upper output waveguide mouthful, lower input waveguide mouthful, the size of lower output waveguide mouthful
For the half of WR-41 standard waveguides mouthful, shape and the microstrip probe transition electricity of the upper micro-strip line chamber and lower micro-strip line chamber
The shape on road is adapted.
Further, the upper transition element and lower transition element are combined by bolt or alignment pin, the upper mistake
It is provided with the edge for crossing unit and lower transition element combinatorial surface after seam, the upper transition element and the combination of lower transition element
Laser seal welding is carried out to the edge of the combinatorial surface.
Further, the passband frequency range of the K-band Waveguide-microbelt transition apparatus is 18GHz-24GHz, return loss
Less than -20dB.
Further, the material of the medium substrate uses PCB or ceramics, the probe, high resistant line, microstrip line and ground connection
The material of terminal is using gold or copper.
Further, the material of the upper transition element and lower transition element uses aluminium or copper, in surface gold-plating, or at least
It is gold-plated in the inner surface of the input waveguide mouthful, micro-strip line chamber and output waveguide mouth.
The K-band Waveguide-microbelt transition apparatus set using said structure has advantages below：
The present invention has by using the upper and lower transition element of parts processing, recombinant one complete transition apparatus of formation
Compact conformation, good airproof performance, cost is low, and size is small, it is easy to the advantages of processing.
The present invention has insertion loss low, and return loss is high, the advantage of bandwidth.The present invention passband frequency range be
18GHz-24GHz, return loss is less than -20dB, and insertion loss is less than 1dB.
The present invention has a broader bandwidth than the similar Waveguide-microbelt transition apparatus under identical size, better seal,
Product qualification rate is higher than 90%, is adapted to produce in enormous quantities.
Brief description of the drawings
Fig. 1 is the exploded view of K-band Waveguide-microbelt transition apparatus of the present invention；
Fig. 2 is the upward view of upper transition element in K-band Waveguide-microbelt transition apparatus of the present invention；
Fig. 3 is the top view of lower transition element in K-band Waveguide-microbelt transition apparatus of the present invention；
Fig. 4 is the top view of microstrip probe in K-band Waveguide-microbelt transition apparatus of the present invention；
Fig. 5 is the electrical characteristics curve map of K-band Waveguide-microbelt transition apparatus of the present invention.
In figure：1. on transition element；2. lower transition element；3. microstrip probe transition circuit；4. on input waveguide mouthful；5. on
High block cavity；6. on micro-strip line chamber；7. on output waveguide mouthful；8. fixing bolt；9. on seam；10. lower input waveguide mouthful；11. under
High block cavity；12. lower micro-strip line chamber；13. microstrip line fixing end；14. lower output waveguide mouthful；15. fixed bolt hole；16. lower seam；
17. medium substrate；18. probe；19. high resistant line；20. microstrip line；21. ground terminal.
Embodiment
The present invention design concept be：
For the defect present in Waveguide-microbelt transition apparatus in the prior art, the invention provides a kind of K-band waveguide
Microstrip transition device, there is provided being machined with input waveguide in the upper and lower transition element that may be combined, upper and lower transition element
Mouth, micro-strip line chamber and output waveguide mouthful, micro-strip line chamber two ends are connected with input waveguide mouthful and output waveguide mouthful respectively, micro-strip line chamber
In be provided with microstrip probe transition circuit, form a complete transition apparatus after upper and lower transition element combination.By using
The structure of parts processing recombinant, the present invention has compact conformation, and good airproof performance, cost is low, and size is small, it is easy to which processing etc. is excellent
Point.
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment 1
It is the embodiment of the present invention 1, in this embodiment, a kind of K-band Waveguide-microbelt mistake as shown in Figure 1, Figure 2, Figure 3, Figure 4
Device, including upper transition element 1 and lower transition element 2 are crossed, upper transition element 1 and lower transition element 2 may be combined, upper mistake
Cross and input waveguide mouthful, micro-strip line chamber and output waveguide mouthful are provided with unit 1 and lower transition element 2, micro-strip line chamber two ends point
Do not connected with input waveguide mouthful and output waveguide mouthful, microstrip probe transition circuit 3 is provided with micro-strip line chamber.
Two parts up and down that transition apparatus is designed to combine, it is convenient to process input respectively in two parts up and down
Waveguide mouthful, micro-strip line chamber and output waveguide mouthful, then one complete transition apparatus of recombinant formation.For example can be by high-precision
Degree digital control machining center processes upper transition element 1 and lower transition element 2, is combined again afterwards.
As shown in figure 4, microstrip probe transition circuit 3 includes being provided with microstrip line 20 on medium substrate 17, medium substrate 17,
The left and right ends of microstrip line 20 are respectively connected with probe 18, and high resistant line 19, medium substrate 17 are connected between probe 18 and microstrip line 20
Left and right ends are provided with ground terminal 21.
The middle part of medium substrate 17 is wide, two ends are narrow.The width of high resistant line 19 is less than the width of microstrip line 20 and probe 18.
Microstrip probe transition circuit 3 is left and right ends symmetrical structure, can be without distinguishing when being placed into micro-strip line chamber
Direction.
Microstrip probe transition circuit 3 is bonded and (uses conductive adhesive) or is weldingly fixed in lower transition element 2, microstrip line
The probe 18 of 20 left ends is suspended in input waveguide mouthful, and the probe 18 of the right-hand member of microstrip line 20 is suspended in output waveguide mouthful.Input
Electromagnetic wave signal in waveguide mouthful is coupled by the probe 18 and microstrip line 20 of left end, and then the probe 18 through right-hand member is launched, from
Exported in output waveguide mouthful.Output waveguide mouthful external connection needs to input the circuit of electromagnetic wave after conversion.
As shown in figure 1, input waveguide mouthful and the opening direction of output waveguide mouthful are on the contrary, opening is located at upper transition element respectively
1 and the lower front and back sides of transition element 2.Input waveguide mouthful is parallel with output waveguide mouthful, is each perpendicular to micro-strip line chamber.
Input waveguide mouthful and the opening direction of output waveguide mouthful are on the contrary, facilitate input waveguide mouthful connection waveguide, output waveguide
Mouth connection circuit.
As shown in Figure 2 and Figure 3, input waveguide mouthful 4, upper micro-strip line chamber 6 and upper output wave are provided with upper transition element 1
Lead and lower input waveguide mouthful 10, lower micro-strip line chamber 12 and lower output waveguide mouthful 14 are provided with mouth 7, lower transition element 2.
Upper input waveguide mouthful 4, lower input waveguide mouthful 10 are combined to form a complete input waveguide mouthful, upper microstrip line
Chamber 6, lower micro-strip line chamber 12 are combined to form a complete micro-strip line chamber, and upper output waveguide mouthful 7, lower output waveguide mouthful 14 are entered
Row combination forms a complete output waveguide mouthful.
Because microstrip probe transition circuit 3 is bonded or is weldingly fixed in lower transition element 2, following 12 liang of the microstrip line chamber of institute
End is additionally provided with lower high block cavity 11 and microstrip line fixing end 13, and these structures are groove-like structure, groove depth and microstrip probe transition
The thickness of circuit 3 is adapted.The upper high block cavity 5 at micro-strip line chamber 6 and two ends on setting only is needed in upper transition element 1 i.e.
Can.
The ground terminal 21 of the left and right ends of microstrip probe transition circuit 3 is in contact with lower transition element 2 and is grounded.Ground connection
Terminal 21 is fixed at microstrip line fixing end 13, it can also be ensured that the hanging part in waveguide mouthful will not be bent.
Upper input waveguide mouthful 4, upper output waveguide mouthful 7, lower input waveguide mouthful 10, the size of lower output waveguide mouthful 14 are WR-
The half of 41 standard waveguides mouthful, forms WR-41 standard waveguides mouthful after combination.Upper micro-strip line chamber 6, upper high block cavity 5, lower micro-strip
Line chamber 12, lower high block cavity 11, the shape of microstrip line fixing end 13 are adapted with the shape of microstrip probe transition circuit 3.
Upper transition element 1 and lower transition element 2 are by together with bolt combination, as shown in Figure 2 and Figure 3, upper transition element 1
On be provided with fixing bolt 8, lower transition element 2 and be provided with fixed bolt hole 15, in the insertion fixed bolt hole 15 of fixing bolt 8
Afterwards, nut fastening is screwed in the end of fixing bolt 8.
It can also be provided with upper transition element 1 and lower transition element 2 on fixed bolt hole, upper transition element 1
Fixed bolt hole is counter sink, and the fixed bolt hole on lower transition element 2 is threaded, is inserted into dormant bolt and is fastened.
It can also be set on upper transition element 1 and positioning hole is provided with alignment pin, lower transition element 2, alignment pin insertion
Realize that upper transition element 1 and lower transition element 2 are combined in positioning hole.
As shown in figure 1, being provided with seam, upper transition list on the edge of upper transition element 1 and the lower combinatorial surface of transition element 2
Laser seal welding is carried out to the edge of combinatorial surface after member 1 and the combination of lower transition element 2.Upper transition element 1 has upper seam 9, lower mistake
Unit 2 is crossed with lower seam 16, " seam+Laser seal welding " structure can allow transition element 1 and the lower combining structure of transition element 2
It is compact, good airproof performance.
The passband frequency range of K-band Waveguide-microbelt transition apparatus is 18GHz-24GHz, and return loss is less than -20dB, inserts
Enter loss and be less than 1dB.As shown in figure 5, S11 represents return loss, S21 represents insertion loss.
The material of medium substrate 17 uses PCB or ceramics, probe 18, high resistant line 19, microstrip line 20 and ground terminal 21
Material using gold or copper.
The material of upper transition element 1 and lower transition element 2 uses aluminium or copper, in surface gold-plating, or at least in incoming wave
The inner surface for leading mouth, micro-strip line chamber and output waveguide mouth is gold-plated.
Embodiment 2
The structure of K-band Waveguide-microbelt transition apparatus is in the same manner as in Example 1 in the present embodiment, is in this embodiment K
Wave band Waveguide-microbelt transition apparatus provides specific design reference dimension, as shown in Figure 2, Figure 3, Figure 4, described upper input waveguide
Mouthfuls 4, the size of lower input waveguide mouthful 10, upper output waveguide mouthfuls 7 and lower output waveguide mouthful 14 is 13.7mm*4.32mm*
5.334mm；The upper size of high block cavity 5 is 1.6mm*1.4mm*1mm, and chamfer radius are 1mm；The upper size of micro-strip line chamber 6 is 30mm*
2.9mm*3.1mm；The radius of fixing bolt 8 is 0.5mm, is highly 4mm；The upper size of seam 9 wide 1mm, high 3mm；Lower high block cavity 11
Size is 1.6mm*1.4mm*0.254mm；The lower size of microstrip line 12 is 30mm*2.9mm*0.254mm；The size of band line fixing end 13
For 4mm*1.6mm*0.254mm, chamfer radius are 1mm；The radius of fixed bolt hole 15 is 0.5mm, and depth is 3.5mm；Lower seam
16 width 2mm depths 3mm；The material ROGES5880 of medium substrate 17, thickness is 0.254mm；The size of probe 18 is 2.5mm*0.5mm；It is high
It is 1.4mm*0.3mm to hinder the size of line 19, and material is copper；The size 30mm*0.7mm of microstrip line 20, material is copper；The size of earth terminal 21
For 4mm*1.6mm, material is copper, and chamfer radius are 1mm；Microstrip probe 3 is bonded or is welded in lower transition structure；Upper seam 9
Mutually assembled with lower seam 16；Fixing bolt 8 and fixed bolt hole 15 are mutually assembled；Upper transition structure 1 and lower transition structure 2 are filled
Ensure its sealing with Laser seal welding after matching somebody with somebody.Signal is inputted by input, real by the incoming microstrip line of microstrip probe Space Coupling
Transition of the existing waveguide to planar circuit.
K-band Waveguide-microbelt probe transitions device in the present embodiment, the performance curve of gained antenna as shown in Figure 5,
Passband frequency range is 18GHz~24GHz, and return loss is respectively less than -20dB, and insertion loss is less than 1dB, this explanation Waveguide-microbelt
Probe transitions device has excellent performance.
Embodiment 3
The structure of K-band Waveguide-microbelt transition apparatus is in the same manner as in Example 1 in the present embodiment, is in this embodiment K
Wave band Waveguide-microbelt transition apparatus provides specific design reference dimension, as shown in Figure 2, Figure 3, Figure 4, described upper input waveguide
Mouthfuls 4, the size of lower input waveguide mouthful 10, upper output waveguide mouthfuls 7 and lower output waveguide mouthful 14 is 13.7mm*4.32mm*
5.334mm；The upper size of high block cavity 5 is 1.6mm*1.4mm*1mm, and chamfer radius are 1mm；The upper size of micro-strip line chamber 6 is 30mm*
2.9mm*3.1mm；The radius of fixing bolt 8 is 0.5mm, is highly 4mm, the upper size of seam 9 wide 1mm, high 3mm；Lower high block cavity 11
Size is 1.6mm*1.4mm*0.254mm；The lower size of microstrip line 12 is 30mm*2.9mm*0.254mm；The size of band line fixing end 13
For 4mm*1.6mm*0.254mm, chamfer radius are 1mm；The radius of fixed bolt hole 15 is 0.5mm, and depth is 3.5mm；Lower seam
16 width 2mm depths 3mm；The material of medium substrate 17 is aluminium oxide ceramics；Thickness is 0.254mm；The size of probe 18 is 2mm*0.3mm；
The size of high resistant line 19 is 1.4mm*0.2mm, and material is gold；The size 30mm*0.25mm of microstrip line 20, material is gold；Earth terminal 21
Size is 4mm*1.6mm, and material is gold, and chamfer radius are 1mm；Microstrip probe 3 is bonded or is welded in lower transition structure；It is upper to stop
Mouth 9 and lower seam 16 are mutually assembled；Fixing bolt 8 and fixed bolt hole 15 are mutually assembled；Upper transition structure 1 and lower transition structure
Ensure its sealing with Laser seal welding after 2 assemblings.Signal is inputted by input, passes through the incoming microstrip line of microstrip probe Space Coupling
Realize waveguide to the transition of planar circuit.
K-band Waveguide-microbelt probe transitions device in the present embodiment, the performance curve of gained antenna as shown in Figure 5,
Passband frequency range is 18GHz~24GHz, and return loss is respectively less than -20dB, and insertion loss is less than 1dB, this explanation Waveguide-microbelt
Probe transitions device has excellent performance.
The embodiment of the present invention is these are only, under the above-mentioned teaching of the present invention, those skilled in the art can be with
Other improvement or deformation are carried out on the basis of above-described embodiment.It will be understood by those skilled in the art that above-mentioned specifically retouches
State and simply preferably explain the purpose of the present invention, protection scope of the present invention should be defined by scope of the claims.
Claims (10)
1. a kind of K-band Waveguide-microbelt transition apparatus, it is characterised in that including upper transition element and lower transition element, it is described on
Transition element and lower transition element be may be combined, and input waveguide is provided with the upper transition element and lower transition element
Mouth, micro-strip line chamber and output waveguide mouthful, the micro-strip line chamber two ends are connected with the input waveguide mouthful and output waveguide mouthful respectively,
Microstrip probe transition circuit is provided with the micro-strip line chamber.
2. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that the microstrip probe transition circuit
Including medium substrate, microstrip line is provided with the medium substrate, the microstrip line left and right ends are respectively connected with probe, the spy
High resistant line is connected between pin and the microstrip line, the medium substrate left and right ends are provided with ground terminal.
3. K-band Waveguide-microbelt transition apparatus as claimed in claim 2, it is characterised in that the microstrip probe transition circuit
It is bonded or is weldingly fixed in the lower transition element, the probe of the microstrip line left end is suspended in the input waveguide mouthful,
The probe of the microstrip line right-hand member is suspended in the output waveguide mouthful.
4. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that the input waveguide mouthful and output
The opening direction of waveguide mouthful is on the contrary, opening is located at the upper transition element and lower transition element front and back sides respectively；The input
Waveguide mouthful is parallel with output waveguide mouthful, is each perpendicular to the micro-strip line chamber.
5. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that set in the upper transition element
Have be provided with upper input waveguide mouthful, upper micro-strip line chamber and upper output waveguide mouthful, the lower transition element lower input waveguide mouthful, under
Micro-strip line chamber and lower output waveguide mouthful, the upper and lower input waveguide mouthful are combined, and the upper and lower micro-strip line chamber is combined,
The upper and lower output waveguide mouthful is combined.
6. K-band Waveguide-microbelt transition apparatus as claimed in claim 5, it is characterised in that the upper input waveguide mouthful, upper defeated
It is the half of WR-41 standard waveguides mouthful, the upper microstrip line to go out waveguide mouth, lower input waveguide mouthful, the size of lower output waveguide mouthful
The shape of chamber and lower micro-strip line chamber is adapted with the shape of the microstrip probe transition circuit.
7. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that the upper transition element and lower mistake
Cross unit to combine by bolt or alignment pin, be all provided with the edge of the upper transition element and lower transition element combinatorial surface
It is equipped with after seam, the upper transition element and the combination of lower transition element and Laser seal welding is carried out to the edge of the combinatorial surface.
8. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that the K-band Waveguide-microbelt transition
The passband frequency range of device is 18GHz-24GHz, and return loss is less than -20dB, and insertion loss is less than 1dB.
9. K-band Waveguide-microbelt transition apparatus as claimed in claim 2, it is characterised in that the material of the medium substrate is adopted
With PCB or ceramics, the probe, high resistant line, the material of microstrip line and ground terminal are using gold or copper.
10. K-band Waveguide-microbelt transition apparatus as claimed in claim 1, it is characterised in that the upper transition element and lower mistake
The material for crossing unit uses aluminium or copper, in surface gold-plating, or at least in the input waveguide mouthful, micro-strip line chamber and output waveguide
The inner surface of mouth is gold-plated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710437379.6A CN107134620B (en) | 2017-06-09 | 2017-06-09 | K-waveband waveguide microstrip transition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710437379.6A CN107134620B (en) | 2017-06-09 | 2017-06-09 | K-waveband waveguide microstrip transition device |
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| CN107134620A true CN107134620A (en) | 2017-09-05 |
| CN107134620B CN107134620B (en) | 2020-08-28 |
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| CN201710437379.6A Active CN107134620B (en) | 2017-06-09 | 2017-06-09 | K-waveband waveguide microstrip transition device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321479A (en) * | 2018-04-03 | 2018-07-24 | 中国工程物理研究院电子工程研究所 | A kind of half notch antenna cake core-waveguide transmission transition structure |
| CN113904073A (en) * | 2021-11-15 | 2022-01-07 | 中国电子科技集团公司第二十九研究所 | 3mm component airtight structure and sealing method based on fin line transition |
| CN116093568A (en) * | 2022-10-25 | 2023-05-09 | 中国船舶集团有限公司第七二三研究所 | Ultra-wideband microstrip line-microstrip line parallel transition structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108321479A (en) * | 2018-04-03 | 2018-07-24 | 中国工程物理研究院电子工程研究所 | A kind of half notch antenna cake core-waveguide transmission transition structure |
| CN108321479B (en) * | 2018-04-03 | 2024-02-23 | 中国工程物理研究院电子工程研究所 | Semi-slot antenna type chip-waveguide transmission transition structure |
| CN113904073A (en) * | 2021-11-15 | 2022-01-07 | 中国电子科技集团公司第二十九研究所 | 3mm component airtight structure and sealing method based on fin line transition |
| CN116093568A (en) * | 2022-10-25 | 2023-05-09 | 中国船舶集团有限公司第七二三研究所 | Ultra-wideband microstrip line-microstrip line parallel transition structure |
| CN116093568B (en) * | 2022-10-25 | 2024-05-07 | 中国船舶集团有限公司第七二三研究所 | Ultra-wideband microstrip line-microstrip line parallel transition structure |
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| CN107134620B (en) | 2020-08-28 |
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