CN107134332B - The non-linear cylindrical piezoresistor of one kind and its application - Google Patents
The non-linear cylindrical piezoresistor of one kind and its application Download PDFInfo
- Publication number
- CN107134332B CN107134332B CN201710300697.8A CN201710300697A CN107134332B CN 107134332 B CN107134332 B CN 107134332B CN 201710300697 A CN201710300697 A CN 201710300697A CN 107134332 B CN107134332 B CN 107134332B
- Authority
- CN
- China
- Prior art keywords
- parts
- piezoresistor
- linear cylindrical
- zinc oxide
- based varistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of non-linear cylindrical piezoresistor and its applications, the non-linear cylindrical piezoresistor, it is made of based varistor piece and noncontinuous electrode, by being doped to the zinc oxide material in based varistor piece, refine the crystal grain of zinc oxide, increase the superficial density of based varistor piece, improve piezo-resistive properties, improve resistor anti-current power impact capacity and nonlinear factor, so that piezoresistor voltage gradient with higher and beneficial electrical property, and nanosecond is reached to overvoltage response speed, restore after overvoltage fast, without afterflow, piezoresistive material of the invention is safe and non-toxic, to human body and environmentally friendly, it is widely portable to power diode, silicon stack, the silicon-controlled equal overvoltage protection of middle low power.
Description
Technical field
The present invention relates to technical field of electronic components, and in particular to a kind of non-linear cylindrical piezoresistor and its answers
With.
Background technique
Varistor is its resistance with a kind of electronic component for applying voltage change and nonlinear change, i.e., when application voltage
When value is more than a certain threshold voltage, the vertiginous resistor of resistance is that a kind of self-resistance is sensitive to applied voltage, and can
With Reusability without the electronic component of damage, also referred to as " surge absorber ", it is mainly used to protect electronic product or group
Part induces generated influence from switching or being struck by lightning.Varistor is not when working, relative to protected electronic component
Speech has very high impedance (several megohms), and will not change design circuit characteristic, but when (surpassing occurs in moment surge voltage
When crossing the breakdown voltage of varistor), the impedance of varistor will be lower, and only several ohms cause short circuit, thus
Protect electronic product or electronic component, varistor have good non-thread characteristic, through-current capacity are big, residual voltage it is horizontal it is low, movement is fast
It the features such as with no afterflow, can be widely applied in electronic equipment, it is in image-sound systems, computer and communication equipment.
Traditional ZnO resistors device includes the metallic compound of lot of trace using zinc oxide as main material, and such as three
Aoxidize two bismuths, antimony oxide, manganese dioxide, cobaltosic oxide, chrome green etc., main material and various metals compound warp
The based varistor piece for the polycrystalline multiphase for mixing, being sintered at high temperature after molding and being formed, but in these piezoresistors
Containing more antimonial, the antimonial of trivalent has carcinogenesis, therefore prepares a kind of zinc oxide without antimony element
Piezoresistor has a very important significance.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of non-linear cylindrical piezoresistor and its application, it
It is made of based varistor piece and noncontinuous electrode, wherein using zinc oxide as primary raw material, it does not add based varistor piece
Add malicious element antimony, safety and environmental protection, and is suitable for a variety of adverse circumstances.
In order to achieve the above object, the present invention is achieved by the following technical programs：
A kind of non-linear cylindrical piezoresistor, is made of based varistor piece and noncontinuous electrode, described pressure-sensitive
Resistor ceramic piece, by the material composition of following parts by weight：90~100 parts of zinc oxide, 0.3~0.8 part of bismuth oxide, titanium dioxide
2.3-3.2 parts of silicon, 0.25-0.3 parts of titanium dioxide, eight vulcanization 0.36-0.45 parts of nine cobalts, 0.08-0.15 parts of silicon carbide, zirconium nitride
0.03-0.08 parts, 0.05-0.15 parts of yttria, 1.5-2.5 parts of CaCu 3 Ti 4 O.
Preferably, the based varistor piece, by the material composition of following parts by weight：95-98 parts of zinc oxide, three oxidations
Two 0.5~0.68 part of bismuths, 2.52-2.86 parts of silica, 0.28-0.3 parts of titanium dioxide, eight vulcanization 0.4-0.42 parts of nine cobalts,
0.1-0.12 parts of silicon carbide, 0.05-0.08 parts of zirconium nitride, 0.05-0.06 parts of yttria, 1.65-2.21 parts of CaCu 3 Ti 4 O.
Preferably, the noncontinuous electrode is made of conductive electrode and organic carrier.
Preferably, the conductive electrode is one of gold, silver, copper, aluminium, nickel, carbon dust.
Preferably, the organic carrier is made of organic solvent, thickener and surfactant.
Preferably, the organic solvent is one of terpinol, acetic acid butyl carbitol, lecithin or a variety of.
Preferably, the thickener is ethyl cellulose or nitrocellulose.
Preferably, the surfactant is one of cyclohexanone, ethyl alcohol, acetone, methanol.
Non-linear cylindrical piezoresistor of the invention to be suitable for power diode, silicon stack, middle low power silicon-controlled
Overvoltage protection, be suitable for height above sea level less than two kms, 86~106KPa of atmospheric pressure, the ring of environment temperature -40~+85 DEG C
Border.
Beneficial effects of the present invention：Piezoresistor in the present invention does not contain carcinogenic elements antimony, nontoxic to the human body, to ring
Border is harmless；By the way that silica is added, the uniformity of pressure-sensitive plating group ceramic chip structure can be improved, obtain the property of varistor
To improvement, moreover it is possible to which the barrier height and nonlinear factor for improving piezoresistor reduce the leakage current of piezoresistor and increasing
Add its anti-current ability, and control dioxide-containing silica, inhibits heat cracks caused by local thermal shock；By to Zinc oxide doped
Eight nine cobalts of vulcanization, increase pressure sensitive voltage, and nonlinear factor increases, and leakage current reduces, and can also reduce zinc oxide grain
Partial size keeps material finer and close；Yttria improves the conductivity of zinc oxide grain, inhibits the growth of zinc oxide grain,
Improve the voltage gradient of piezoresistor.The present invention has refined the crystal grain of zinc oxide by being doped to zinc oxide material,
The superficial density for increasing based varistor piece, improves piezo-resistive properties, improves resistor anti-current power impact energy
Power and nonlinear factor, so that piezoresistor voltage gradient with higher and beneficial electrical property, and overvoltage is responded
Speed reaches nanosecond, restores fast after overvoltage, no afterflow, piezoresistive material of the invention is safe and non-toxic, to human body and ring
Border is harmless.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention,
Technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is the present invention one
Divide embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making
Every other embodiment obtained, shall fall within the protection scope of the present invention under the premise of creative work.
Embodiment 1：
A kind of non-linear cylindrical piezoresistor, is made of based varistor piece and noncontinuous electrode, described pressure-sensitive
Resistor ceramic piece, by the material composition of following parts by weight：100 parts of zinc oxide, 0.3 part of bismuth oxide, 2.52 parts of silica,
0.3 part of titanium dioxide, eight vulcanization 0.45 part of nine cobalts, 0.15 part of silicon carbide, 0.05 part of zirconium nitride, 0.15 part of yttria, titanium
2.5 parts of sour copper calcium；
The noncontinuous electrode is made of carbon dust, acetic acid butyl carbitol, lecithin, nitrocellulose and ethyl alcohol.
The non-linear cylindrical piezoresistor is suitable for the silicon-controlled mistake of power diode, silicon stack, middle low power
Pressure protection is suitable for height above sea level less than two kms, 86~106KPa of atmospheric pressure, the environment of environment temperature -40~+85 DEG C.
Embodiment 2：
A kind of non-linear cylindrical piezoresistor, is made of based varistor piece and noncontinuous electrode, described pressure-sensitive
Resistor ceramic piece, by the material composition of following parts by weight：90 parts of zinc oxide, 0.68 part of bismuth oxide, 3.2 parts of silica,
0.25 part of titanium dioxide, eight vulcanization 0.4 part of nine cobalts, 0.12 part of silicon carbide, 0.05 part of zirconium nitride, 1.65 parts of yttria, titanium
1.5 parts of sour copper calcium.
The noncontinuous electrode is made of bronze, terpinol, acetic acid butyl carbitol, nitrocellulose and methanol.
The non-linear cylindrical piezoresistor is suitable for the silicon-controlled mistake of power diode, silicon stack, middle low power
Pressure protection is suitable for height above sea level less than two kms, 86~106KPa of atmospheric pressure, the environment of environment temperature -40~+85 DEG C.
Embodiment 3：
A kind of non-linear cylindrical piezoresistor, is made of based varistor piece and noncontinuous electrode, described pressure-sensitive
Resistor ceramic piece, by the material composition of following parts by weight：98 parts of zinc oxide, 0.5 part of bismuth oxide, 2.86 parts of silica,
0.28 part of titanium dioxide, eight vulcanization 0.42 part of nine cobalts, 0.08 part of silicon carbide, 0.03 part of zirconium nitride, 0.05 part of yttria, titanium
1.65 parts of sour copper calcium.
The noncontinuous electrode is made of nickel powder, lecithin, ethyl cellulose and acetone.
The non-linear cylindrical piezoresistor is suitable for the silicon-controlled mistake of power diode, silicon stack, middle low power
Pressure protection is suitable for height above sea level less than two kms, 86~106KPa of atmospheric pressure, the environment of environment temperature -40~+85 DEG C.
Embodiment 4：
A kind of non-linear cylindrical piezoresistor, is made of based varistor piece and noncontinuous electrode, described pressure-sensitive
Resistor ceramic piece, by the material composition of following parts by weight：95 parts of zinc oxide, 0.8 part of bismuth oxide, 2.3 parts of silica, two
0.28 part of titanium oxide, eight vulcanization 0.36 part of nine cobalts, 0.1 part of silicon carbide, 0.08 part of zirconium nitride, 2.21 parts of yttria, metatitanic acid
2.21 parts of copper calcium.
The noncontinuous electrode is by silver powder, terpinol, acetic acid butyl carbitol, lecithin, ethyl cellulose and cyclohexanone
Composition.
The non-linear cylindrical piezoresistor is suitable for the silicon-controlled mistake of power diode, silicon stack, middle low power
Pressure protection is suitable for height above sea level less than two kms, 86~106KPa of atmospheric pressure, the environment of environment temperature -40~+85 DEG C.
The performance test data of the piezoresistor of Examples 1 to 4 is referring to table 1.
Table 1：The performance test data of the piezoresistor of Examples 1 to 4
The experimental results showed that：Non-linear cylindrical piezoresistor of the invention has excellent nonlinear wind vibration,
Suitable for various overvoltage protections and surge absoption；When running under normal working voltage, electrical leakage voltage only has microampere rank, function
It consumes minimum.
To sum up, the embodiment of the present invention has the advantages that：The present invention is refined by being doped to zinc oxide material
The crystal grain of zinc oxide, increases the superficial density of based varistor piece, improves piezo-resistive properties, improve resistor
Anti-current power impact capacity and nonlinear factor, so that piezoresistor voltage gradient with higher and beneficial electrical property,
And nanosecond is reached to overvoltage response speed, and restore fast after overvoltage, no afterflow, piezoresistive material safety nothing of the invention
Poison, to human body and environmentally friendly.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that：It still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (9)
1. a kind of non-linear cylindrical piezoresistor, which is characterized in that it is made of based varistor piece and noncontinuous electrode,
The based varistor piece, by the material composition of following parts by weight：90~100 parts of zinc oxide, bismuth oxide 0.3~0.8
Part, 2.3-3.2 parts of silica, 0.25-0.3 parts of titanium dioxide, eight vulcanization 0.36-0.45 parts of nine cobalts, silicon carbide 0.08-0.15
Part, 0.03-0.08 parts of zirconium nitride, 0.05-0.15 parts of yttria, 1.5-2.5 parts of CaCu 3 Ti 4 O.
2. non-linear cylindrical piezoresistor as described in claim 1, which is characterized in that the based varistor piece,
By the material composition of following parts by weight：95-98 parts of zinc oxide, 0.5~0.68 part of bismuth oxide, silica 2.52-2.86
Part, 0.28-0.3 parts of titanium dioxide, eight vulcanization 0.4-0.42 parts of nine cobalts, 0.1-0.12 parts of silicon carbide, zirconium nitride 0.05-0.08
Part, 0.05-0.06 parts of yttria, 1.65-2.21 parts of CaCu 3 Ti 4 O.
3. non-linear cylindrical piezoresistor as claimed in claim 2, which is characterized in that the noncontinuous electrode is by conduction
Electrode and organic carrier composition.
4. non-linear cylindrical piezoresistor as claimed in claim 3, which is characterized in that the conductive electrode be gold, silver,
One of copper, aluminium, nickel, carbon dust.
5. non-linear cylindrical piezoresistor as claimed in claim 4, which is characterized in that the organic carrier is by organic molten
Agent, thickener and surfactant composition.
6. non-linear cylindrical piezoresistor as claimed in claim 5, which is characterized in that the organic solvent is pine tar
One of alcohol, acetic acid butyl carbitol, lecithin are a variety of.
7. non-linear cylindrical piezoresistor as claimed in claim 6, which is characterized in that the thickener is ethyl cellulose
Element or nitrocellulose.
8. non-linear cylindrical piezoresistor as claimed in claim 7, which is characterized in that the surfactant is hexamethylene
One of ketone, ethyl alcohol, acetone, methanol.
9. a kind of application of the non-linear cylindrical piezoresistor as described in claim 1~8 is any, which is characterized in that institute
It states non-linear cylindrical piezoresistor and is suitable for the silicon-controlled overvoltage protection of power diode, silicon stack, middle low power, be suitable for
Height above sea level is less than two kms, 86~106KPa of atmospheric pressure, the environment of environment temperature -40~+85 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710300697.8A CN107134332B (en) | 2017-04-29 | 2017-04-29 | The non-linear cylindrical piezoresistor of one kind and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710300697.8A CN107134332B (en) | 2017-04-29 | 2017-04-29 | The non-linear cylindrical piezoresistor of one kind and its application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107134332A CN107134332A (en) | 2017-09-05 |
| CN107134332B true CN107134332B (en) | 2018-11-20 |
Family
ID=59716465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710300697.8A Active CN107134332B (en) | 2017-04-29 | 2017-04-29 | The non-linear cylindrical piezoresistor of one kind and its application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107134332B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584175B (en) * | 2020-05-25 | 2021-12-10 | 常州市武进科华电力电子器材有限公司 | Low-voltage surge protector |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04139702A (en) * | 1990-09-29 | 1992-05-13 | Taiyo Yuden Co Ltd | Voltage-dependent nonlinear resistor |
| CN1046172C (en) * | 1996-12-31 | 1999-11-03 | 中国科学院等离子体物理研究所 | Zinc oxide ceramic linear resistor and its producing method |
| CN1367498A (en) * | 2002-02-27 | 2002-09-04 | 广州新莱福磁电有限公司 | Multielectrode ring voltage-sensitive resistor |
| CN103396116B (en) * | 2013-08-13 | 2014-10-01 | 广东风华高新科技股份有限公司 | Zinc-oxide piezoresistor raw material, preparation method thereof and piezoresistor |
-
2017
- 2017-04-29 CN CN201710300697.8A patent/CN107134332B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107134332A (en) | 2017-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101239819B (en) | Method for preparing sheet type multilayer zinc oxide pressure-sensitive electric resistance ceramic powder | |
| CN107082635B (en) | Piezoresistor with low residual voltage ratio and application thereof | |
| TWI409829B (en) | Zno varistor utilized in high temperature | |
| CN106630998B (en) | A kind of Non-linear pressure sensitive resistor of safety and environmental protection and its application | |
| KR101411519B1 (en) | Voltage non-linear resistance ceramic composition and voltage non-linear resistance element | |
| CN107134332B (en) | The non-linear cylindrical piezoresistor of one kind and its application | |
| CN204012697U (en) | A kind of safeguard structure that is applied to laser machine internal control part power supply | |
| US4495482A (en) | Metal oxide varistor with controllable breakdown voltage and capacitance and method of making | |
| CN106928611A (en) | A kind of piezoresistor insulation cover of heatproof | |
| US6339367B1 (en) | Laminated chip type varistor | |
| US3962715A (en) | High-speed, high-current spike suppressor and method for fabricating same | |
| TW504711B (en) | Resistor with non-linear voltage characteristic and the manufacturing method of the same | |
| CN2904421Y (en) | Blocking type overvoltage resistance surge inhibiting power filter | |
| CN102709010B (en) | Multilayer varistor and preparation method for same | |
| CN103910524B (en) | Tin ash piezoresistive material of a kind of rare-earth oxide modified and preparation method thereof | |
| CN102184913B (en) | Anti-static device | |
| Gupta | Effect of minor doping on the high current application of the ZnO varistor | |
| CN203317832U (en) | Compound type PET (polyethylene terephthalate) protective film | |
| CN213623962U (en) | Corrosion-resistant PET adhesive tape for shielding protection of circuit board | |
| CN203456212U (en) | NTC (Negative Temperature Coefficient) thermosensitive resistor for mounting surfaces of SMD (surface mounted device) | |
| CN216054089U (en) | Paster piezoresistor | |
| CN109103840A (en) | A kind of overvoltage and overcurrent integral type protective element | |
| CN206388577U (en) | Lightning protection piezo-resistance | |
| Nahm | Nonohmic properties of V/Mn/Nb/Gd co-doped zinc oxide semiconducting varistors with low-temperature sintering process | |
| Montenegro et al. | Degradation of zinc oxide varistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |