CN107124153A - Surface acoustic wave device for suppressing transverse mode - Google Patents
Surface acoustic wave device for suppressing transverse mode Download PDFInfo
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- CN107124153A CN107124153A CN201710103741.6A CN201710103741A CN107124153A CN 107124153 A CN107124153 A CN 107124153A CN 201710103741 A CN201710103741 A CN 201710103741A CN 107124153 A CN107124153 A CN 107124153A
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- interdigitated electrodes
- bus
- protuberance
- edge area
- thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/1457—Transducers having different finger widths
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
A kind of surface acoustic wave device is disclosed, including piezoelectric substrate, the first bus relative to each other and the second bus, multiple first interdigitated electrodes for being electrically connected to the first bus and extending from the first bus to the second bus and multiple second interdigitated electrodes for being electrically connected to the second bus and extending from the second bus to the first bus that are formed on piezoelectric substrate, wherein the first interdigitated electrodes and the second interdigitated electrodes are alternately arranged.
Description
Technical field
The present invention relates to surface acoustic wave device, more particularly to by suppressing unnecessary transverse mode, reduction occurs in the pass-band
Ripple, and improve insertion loss to eliminate the surface acoustic wave device of spuious (spurious).
Background technology
Surface acoustic wave device converts electrical energy into sound wave energy, or sound wave can be converted into electric energy.For example, such as institute in Fig. 1
The surface acoustic wave device shown includes：Piezoelectric substrate 10, form bus 21 and 22 relative to each other on the substrate 10 and connect respectively
It is connected to the interdigitated electrodes 31 and 32 that bus 21 and 22 is alternately arranged.
One of the problem of surface acoustic wave device is unnecessary transverse mode.Transverse mode produces spurious response, causes undesirable ripple
Line, or increase insertion loss.This phenomenon has harmful effect to the performance of surface acoustic wave device.
As for suppressing one of method of transverse mode in surface acoustic wave device, entitled " Design Modeling and
Visualization for Low Transverse Modes R-SPUDT devices " document provides so-called piston
Pattern (piston mode), wherein velocity of wave is with the addition of at the edge of transducer reduces area, with produce speed at opening it is normal simultaneously
And the pattern reduced as direction is outside.However, the structure disclosed in the document is difficult to because pattern is complicated, and
And the probability broken down is high.
The content of the invention
It can suppress the surface acoustic wave device of transverse mode by better simply structure it is an aspect of the invention to provide a kind of.
One aspect of the present invention provides a kind of surface acoustic wave device, including：Piezoelectric substrate, formation are on piezoelectric substrate
The first bus relative to each other and the second bus, be electrically connected to the first bus and extend from the first bus to the second bus it is many
Individual first interdigitated electrodes and multiple second friendships for being electrically connected to the second bus and extending from the second bus to the first bus
Finger-type electrode, wherein the first interdigitated electrodes and the second interdigitated electrodes are alternately arranged.Here, the first interdigitated electrodes and
The center of second interdigitated electrodes, the first edge area between the center and the first bus and in the central field and
Second edge area between two buses is defined according to direction of wave travel.In addition, first only in first edge area is interdigital
The second interdigitated electrodes in type electrode and second edge area are formed with protuberance, so that in first edge area and second edge area
Velocity of wave be less than center in velocity of wave.
The width of protuberance can be more than the width in the central region of the first interdigitated electrodes and the second interdigitated electrodes.
The thickness of protuberance can be more than the thickness in the central region of the first interdigitated electrodes and the second interdigitated electrodes.
The width and thickness of protuberance can be more than the first interdigitated electrodes and the second interdigitated electrodes in the central region
Width and thickness.
Another aspect of the present invention provides a kind of surface acoustic wave device, including：Piezoelectric substrate, formation are on piezoelectric substrate
The first bus relative to each other and the second bus, be electrically connected to the first bus and extend from the first bus to the second bus it is many
Individual first interdigitated electrodes and multiple second friendships for being electrically connected to the second bus and extending from the second bus to the first bus
Finger-type electrode, wherein the first interdigitated electrodes and the second interdigitated electrodes are alternately arranged.Here, the first interdigitated electrodes and
The center of second interdigitated electrodes, the first edge area between center and the first bus and female in center and second
Second edge area between line is defined according to direction of wave travel.In addition, the second interdigitated electricity only in first edge area
The first interdigitated electrodes formation protuberance in pole and second edge area, so that the velocity of wave in first edge area and second edge area
Less than the velocity of wave in center.
The width of protuberance can be more than the width in the central region of the first interdigitated electrodes and the second interdigitated electrodes.
The thickness of protuberance can be more than the thickness in the central region of the first interdigitated electrodes and the second interdigitated electrodes.
The width and thickness of protuberance can be more than the first interdigitated electrodes and the second interdigitated electrodes in the central region
Width and thickness.
Brief description of the drawings
The exemplary embodiment of the present invention, above and other objects of the present invention, feature are described in detail by reference to accompanying drawing
It is will become apparent with advantage for those of ordinary skill in the art, wherein：
Fig. 1 shows the example of the structure of general surface acoustic wave device；
Fig. 2 is the view for the structure for showing the surface acoustic wave device according to the first embodiment of the present invention；
Fig. 3 is the view for the structure for showing surface acoustic wave device according to the second embodiment of the present invention；
Fig. 4 is the view for the structure for showing surface acoustic wave device according to the third embodiment of the invention；
Fig. 5 is the view for the structure for showing surface acoustic wave device according to the fourth embodiment of the invention；
Fig. 6 is the view for the structure for showing surface acoustic wave device according to the fifth embodiment of the invention；And
Fig. 7 is the view for the structure for showing surface acoustic wave device according to the sixth embodiment of the invention.
Embodiment
The exemplary embodiment of the present invention is described in detail below with reference to accompanying drawings.In the following description and the drawings, substantially
Identical part will be presented with like reference characters, and will omit its repeated description.In addition, in embodiments of the invention
In being described, when think the detailed description to function well known in the art and part may unnecessarily make the present invention sheet
Matter will be omitted when fuzzy.
Fig. 2 is the view for the structure for showing the surface acoustic wave device according to the first embodiment of the present invention.
With reference to Fig. 2, piezoelectric substrate 100 is included according to the surface acoustic wave device of the present embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 310 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 320 extended to the first bus 210.Here, the first interdigitated electrodes 310 and second are interdigital
Type electrode 320 is alternately arranged.
In an embodiment of the present invention, according to direction of wave travel (with the first interdigitated electrodes and the second interdigitated electrodes 310
The direction vertical with 320) define center, the center and of the first interdigitated electrodes and the second interdigitated electrodes 310 and 320
The second edge area between first edge area and center and the second bus 220 between one bus 210.
The width that second interdigitated electrodes 320 are included in first edge area is more than the protuberance of width in the central region
321, and the first interdigitated electrodes 310 are included in protuberance of the width in second edge area more than the width in center
311.Therefore, the velocity of wave in first edge area and second edge area becomes less than the velocity of wave in center.
In first edge area, not only the second interdigitated electrodes 320 can have bigger than width in center wide
The protuberance of degree, and the first interdigitated electrodes 310 can also have the protuberance of the width bigger than width in center.
However, due to the second interdigitated electrodes 320 protuberance 321 and the first interdigitated electrodes 310 adjacent thereto protuberance it
Between gap become narrow, therefore, it is difficult to realize corresponding electrode pattern.Similarly, in second edge area, not only first hand over
Finger-type electrode 310 can have the protuberance of the width bigger than width in center, and the second interdigitated electrodes 320
There can be the protuberance of the width bigger than width in center.However, due to the protuberance of the first interdigitated electrodes 310
Gap between 311 and the protuberance of the second interdigitated electrodes 320 adjacent thereto becomes narrow, corresponding therefore, it is difficult to realize
Electrode pattern.For example, electrode pattern can be formed by photoetching process.However, when the gap between electrode is narrow, it is difficult to use
Photoetching process realizes electrode pattern, and occurs the probability increase of defect.
In this embodiment of the invention, in first edge area, the second interdigitated electrodes 320 include protuberance 321, but
It is that the first interdigitated electrodes 310 do not include protuberance.Similarly, in second edge area, the first interdigitated electrodes 310 include prominent
Go out portion 311, but the second interdigitated electrodes 320 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 310 form protuberance with the second interdigitated electrodes 320 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
Fig. 3 is the view for the structure for showing surface acoustic wave device according to the second embodiment of the present invention.
With reference to Fig. 3, piezoelectric substrate 100 is included according to the surface acoustic wave device of the present embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 410 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 420 extended to the first bus 210.Here, the first interdigitated electrodes 410 and second are interdigital
Type electrode 420 is alternately arranged.
The width that first interdigitated electrodes 410 are included in first edge area is more than the protuberance of width in the central region
411, and the second interdigitated electrodes 420 are included in protuberance of the width in second edge area more than the width in center
421.Therefore, the velocity of wave in first edge area and second edge area becomes less than the velocity of wave in center.
In first edge area, not only the first interdigitated electrodes 410 can have bigger than width in center wide
The protuberance of degree, and the second interdigitated electrodes 420 can also have the protuberance of the width bigger than width in center.
However, due to the first interdigitated electrodes 410 protuberance 411 and the second interdigitated electrodes 420 adjacent thereto protuberance it
Between gap become narrow, therefore, it is difficult to realize corresponding electrode pattern.Similarly, in second edge area, not only second hand over
Finger-type electrode 420 can have the protuberance of the width bigger than width in center, and the first interdigitated electrodes 410
There can be the protuberance of the width bigger than width in center.However, due to the protuberance of the second interdigitated electrodes 420
Gap between 421 and the protuberance of the first interdigitated electrodes 410 adjacent thereto becomes narrow, corresponding therefore, it is difficult to realize
Electrode pattern.
In this embodiment of the invention, in first edge area, the first interdigitated electrodes 410 include protuberance 411, but
It is that the second interdigitated electrodes 420 do not include protuberance.Similarly, in second edge area, the second interdigitated electrodes 420 include prominent
Go out portion 421, but the first interdigitated electrodes 410 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 410 form protuberance with the second interdigitated electrodes 420 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
Fig. 4 is the view for the structure for showing surface acoustic wave device according to the third embodiment of the invention.
With reference to Fig. 4, piezoelectric substrate 100 is included according to the surface acoustic wave device of the present embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 510 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 520 extended to the first bus 210.Here, the first interdigitated electrodes 510 and second are interdigital
Type electrode 520 is alternately arranged.
The thickness that second interdigitated electrodes 520 are included in first edge area is more than the protuberance of thickness in the central region
521, and the first interdigitated electrodes 510 are included in protuberance of the thickness in second edge area more than the thickness in center
511.Therefore, the velocity of wave in first edge area and second edge area becomes less than the velocity of wave in center.
Although the thickness that not only the second interdigitated electrodes 520 can be included in first edge area is more than in the central region
The protuberance of thickness, and the first interdigitated electrodes 510 can also be included in thickness in first edge area and be more than in center
In thickness protuberance, it can be difficult in each adjacent electrode formed with larger thickness protuberance.Similarly, although
The thickness that not only the first interdigitated electrodes 510 can be included in second edge area is more than the protrusion of thickness in the central region
Portion, and the second interdigitated electrodes 520 can also be included in thickness in second edge area and be more than thickness in the central region
Protuberance, it can be difficult to forming the protuberance with larger thickness in each adjacent electrode.
In this embodiment of the invention, in first edge area, the second interdigitated electrodes 520 include protuberance 521, but
It is that the first interdigitated electrodes 510 do not include protuberance.Similarly, in second edge area, the first interdigitated electrodes 510 include prominent
Go out portion 511, but the second interdigitated electrodes 520 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 510 form protuberance with the second interdigitated electrodes 520 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
Fig. 5 is the view for the structure for showing surface acoustic wave device according to the fourth embodiment of the invention.
With reference to Fig. 5, piezoelectric substrate 100 is included according to the surface acoustic wave device of the present embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 610 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 620 extended to the first bus 210.Here, the first interdigitated electrodes 610 and second are interdigital
Type electrode 620 is alternately arranged.
The thickness that first interdigitated electrodes 610 are included in first edge area is more than the protuberance of thickness in the central region
611, and the second interdigitated electrodes 620 are included in protuberance of the thickness more than thickness in the central region in second edge area
621.Therefore, the velocity of wave in first edge area and second edge area becomes less than the velocity of wave in center.
Although the thickness that not only the first interdigitated electrodes 610 can be included in first edge area is more than in the central region
The protuberance of thickness, and the second interdigitated electrodes 620 can also be included in thickness in first edge area and be more than in center
In thickness protuberance, it can be difficult in each adjacent electrode formed with larger thickness protuberance.Similarly, although
The thickness that not only the second interdigitated electrodes 620 can be included in second edge area is more than the protrusion of thickness in the central region
Portion, and the first interdigitated electrodes 610 can also be included in thickness in second edge area and be more than thickness in the central region
Protuberance, it can be difficult to forming the protuberance with larger thickness in each adjacent electrode.
In this embodiment of the invention, in first edge area, the first interdigitated electrodes 610 include protuberance 611, but
It is that the second interdigitated electrodes 620 do not include protuberance.Similarly, in second edge area, the second interdigitated electrodes 620 include prominent
Go out portion 621, but the first interdigitated electrodes 610 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 610 form protuberance with the second interdigitated electrodes 620 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
Fig. 6 is the view for the structure for showing surface acoustic wave device according to the fifth embodiment of the invention.
With reference to Fig. 6, piezoelectric substrate 100 is included according to the surface acoustic wave device of the embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 710 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 720 extended to the first bus 210.Here, the first interdigitated electrodes 710 and second are interdigital
Type electrode 720 is alternately arranged.
Second interdigitated electrodes 720 be included in width and thickness in first edge area be more than width in the central region and
The protuberance 721 of thickness, and width and thickness that the first interdigitated electrodes 710 are included in second edge area are more than center
In width and thickness protuberance 711.Therefore, the velocity of wave in first edge area and second edge area is become less than in center
Velocity of wave.
In first edge area, not only the second interdigitated electrodes 720 can have than the width and thickness in center more
Big width and the protuberance of thickness, and the first interdigitated electrodes 710 can also be with than the width and thickness in center
Bigger width and the protuberance of thickness.However, due to the interdigitated electricity of protuberance 721 and first of the second interdigitated electrodes 720
Gap between the protuberance of pole 710 becomes narrow, and therefore, it is difficult to realize corresponding electrode pattern.Similarly, in second edge
Qu Zhong, not only the first interdigitated electrodes 710 can have the prominent of the width bigger than width and thickness in center and thickness
Go out portion, and the second interdigitated electrodes 720 can also have the width bigger than width and thickness in center and thickness
Protuberance.However, due to the first interdigitated electrodes 710 protuberance 711 and the second interdigitated electrodes 720 adjacent thereto it is prominent
The gap gone out between portion becomes narrow, and therefore, it is difficult to realize corresponding electrode pattern.
In this embodiment of the invention, in first edge area, the second interdigitated electrodes 720 include protuberance 721, but
It is that the first interdigitated electrodes 710 do not include protuberance.Similarly, in second edge area, the first interdigitated electrodes 710 include prominent
Go out portion 711, but the second interdigitated electrodes 720 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 710 form protuberance with the second interdigitated electrodes 720 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
Fig. 7 is that the structure for showing surface acoustic wave device according to the sixth embodiment of the invention is shown.
With reference to Fig. 7, piezoelectric substrate 100 is included according to the surface acoustic wave device of the embodiment, formed on piezoelectric substrate 100
The first bus relative to each other and the second bus 210 and 220, be electrically connected to the first bus 210 and from the first bus 210 to
Multiple first interdigitated electrodes 810 of second bus 220 extension and it is electrically connected to the second bus 220 and from the second bus
220 multiple second interdigitated electrodes 820 extended to the first bus 210.Here, the first interdigitated electrodes 810 and second are interdigital
Type electrode 820 is alternately arranged.
First interdigitated electrodes 810 be included in width and thickness in first edge area be more than width in the central region and
The protuberance 811 of thickness, and width and thickness that the second interdigitated electrodes 820 are included in second edge area are more than center
In width and thickness protuberance 821.Therefore, the velocity of wave in first edge area and second edge area is become less than in center
Velocity of wave.
In first edge area, not only the first interdigitated electrodes 810 can have than the width and thickness in center more
Big width and the protuberance of thickness, and the second interdigitated electrodes 820 can also be with than the width and thickness in center
Bigger width and the protuberance of thickness.However, due to the interdigitated electricity of protuberance 811 and second of the first interdigitated electrodes 810
Gap between the protuberance of pole 820 becomes narrow, and therefore, it is difficult to realize corresponding electrode pattern.Similarly, in second edge
Qu Zhong, not only the second interdigitated electrodes 820 can have the prominent of the width bigger than width and thickness in center and thickness
Go out portion, and the first interdigitated electrodes 810 can also have the width bigger than width and thickness in center and thickness
Protuberance.However, due to the second interdigitated electrodes 820 protuberance 821 and the first interdigitated electrodes 810 adjacent thereto it is prominent
The gap gone out between portion becomes narrow, and therefore, it is difficult to realize corresponding electrode pattern.
In this embodiment of the invention, in first edge area, the first interdigitated electrodes 810 include protuberance 811, but
It is that the second interdigitated electrodes 820 do not include protuberance.Similarly, in second edge area, the second interdigitated electrodes 820 include prominent
Go out portion 821, but the first interdigitated electrodes 810 do not include protuberance.Therefore, with the first interdigitated electricity in same marginal zone
The situation that both pole 810 form protuberance with the second interdigitated electrodes 820 is compared, and is not conformed to technologic advantage and reduction
The advantage of lattice rate.
According to the present invention it is possible to using simpler structure suppress transverse mode, therefore easily realize and break down it is general
Rate is low.
Although the exemplary embodiment of the present invention is described above, those of ordinary skill in the art should manage
Solution, can modify in the case where not departing from the inner characteristic of the present invention.Therefore, the disclosed embodiments should not be recognized
To be restricted viewpoint, but descriptive viewpoint.It should be appreciated that the scope of the present invention is by claims rather than by upper
Bright restriction is stated, and including all differences in its equivalency range.
Claims (8)
1. a kind of surface acoustic wave device, it is characterised in that including：
Piezoelectric substrate；
The first bus and the second bus relative to each other formed on the piezoelectric substrate；
Multiple first for being electrically connected to first bus and extending from first bus to second bus are interdigitated
Electrode；And
Multiple second for being electrically connected to second bus and extending from second bus to first bus are interdigitated
Electrode, wherein first interdigitated electrodes and second interdigitated electrodes are alternately arranged,
The center of wherein described first interdigitated electrodes and second interdigitated electrodes, in the center and described first
First edge area between bus and the second edge area between the center and second bus are passed according to ripple
Broadcast what direction was defined, and
Described second in first interdigitated electrodes and the second edge area wherein only in the first edge area
Interdigitated electrodes are formed with protuberance, so that the velocity of wave in the first edge area and the second edge area is less than the center
Velocity of wave in area.
2. surface acoustic wave device according to claim 1, wherein the width of the protuberance is interdigitated more than described first
The width in the center of electrode and second interdigitated electrodes.
3. surface acoustic wave device according to claim 1, wherein the thickness of the protuberance is interdigitated more than described first
The thickness in the center of electrode and second interdigitated electrodes.
4. surface acoustic wave device according to claim 1, wherein the width and thickness of the protuberance are more than described first
The width and thickness in the center of interdigitated electrodes and second interdigitated electrodes.
5. a kind of surface acoustic wave device, it is characterised in that including：
Piezoelectric substrate；
The first bus and the second bus relative to each other formed on the piezoelectric substrate；
Multiple first for being electrically connected to first bus and extending from first bus to second bus are interdigitated
Electrode；And
Multiple second for being electrically connected to second bus and extending from second bus to first bus are interdigitated
Electrode, wherein first interdigitated electrodes and second interdigitated electrodes are alternately arranged,
The center of wherein described first interdigitated electrodes and second interdigitated electrodes, in the center and described first
First edge area between bus and the second edge area between the center and second bus are passed according to ripple
Broadcast what direction was defined, and
Described first in second interdigitated electrodes and the second edge area wherein only in the first edge area
Interdigitated electrodes formation protuberance, so that the velocity of wave in the first edge area and the second edge area is less than the center
In velocity of wave.
6. surface acoustic wave device according to claim 5, wherein the width of the protuberance is interdigitated more than described first
The width in the center of electrode and second interdigitated electrodes.
7. surface acoustic wave device according to claim 5, wherein the thickness of the protuberance is interdigitated more than described first
The thickness in the center of electrode and second interdigitated electrodes.
8. surface acoustic wave device according to claim 5, wherein the width and thickness of the protuberance are more than described first
The width and thickness in the center of interdigitated electrodes and second interdigitated electrodes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0021810 | 2016-02-24 | ||
| KR1020160021810A KR102636251B1 (en) | 2016-02-24 | 2016-02-24 | Surface acoustic wave device for transverse mode suppression |
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| Publication Number | Publication Date |
|---|---|
| CN107124153A true CN107124153A (en) | 2017-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710103741.6A Pending CN107124153A (en) | 2016-02-24 | 2017-02-24 | Surface acoustic wave device for suppressing transverse mode |
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|---|---|
| US (1) | US10382008B2 (en) |
| KR (1) | KR102636251B1 (en) |
| CN (1) | CN107124153A (en) |
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| CN113452339A (en) * | 2021-05-20 | 2021-09-28 | 电子科技大学 | Piezoelectric film bulk acoustic resonator |
| CN113839642A (en) * | 2021-09-17 | 2021-12-24 | 杭州左蓝微电子技术有限公司 | Surface acoustic wave device capable of inhibiting transverse mode and manufacturing method thereof |
| WO2022021468A1 (en) * | 2020-07-31 | 2022-02-03 | 杭州见闻录科技有限公司 | Interdigital electrode structure and manufacturing method therefor, and surface acoustic wave device having structure |
| WO2022094743A1 (en) * | 2020-11-03 | 2022-05-12 | 华为技术有限公司 | Resonator, filter, and electronic device |
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| JP6421899B2 (en) * | 2016-06-27 | 2018-11-14 | 株式会社村田製作所 | Elastic wave filter device |
| US10873313B2 (en) | 2017-09-01 | 2020-12-22 | Skyworks Solutions, Inc. | Piston mode lamb wave resonators |
| CN109004914B (en) * | 2018-07-11 | 2022-05-03 | 开元通信技术（厦门）有限公司 | Surface acoustic wave device and preparation method thereof |
| DE102019108843A1 (en) * | 2019-04-04 | 2020-10-08 | RF360 Europe GmbH | Modified SAW converter, SAW resonator and SAW filter comprising them |
| US11929734B2 (en) | 2021-01-29 | 2024-03-12 | Rf360 Singapore Pte. Ltd. | Surface acoustic wave resonator with piston mode design and electrostatic discharge protections |
| US20230133161A1 (en) * | 2021-10-29 | 2023-05-04 | Qorvo Us, Inc. | Surface acoustic wave (saw) structures with transverse mode suppression |
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| CN102684639A (en) * | 2011-03-07 | 2012-09-19 | 特里奎恩特半导体公司 | Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022021468A1 (en) * | 2020-07-31 | 2022-02-03 | 杭州见闻录科技有限公司 | Interdigital electrode structure and manufacturing method therefor, and surface acoustic wave device having structure |
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| CN113452339A (en) * | 2021-05-20 | 2021-09-28 | 电子科技大学 | Piezoelectric film bulk acoustic resonator |
| CN113839642A (en) * | 2021-09-17 | 2021-12-24 | 杭州左蓝微电子技术有限公司 | Surface acoustic wave device capable of inhibiting transverse mode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102636251B1 (en) | 2024-02-14 |
| KR20170099567A (en) | 2017-09-01 |
| US20170244378A1 (en) | 2017-08-24 |
| US10382008B2 (en) | 2019-08-13 |
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