CN107122554A - The two-dimensional simulation model and its method for building up and emulation mode of a kind of black silicon material - Google Patents
The two-dimensional simulation model and its method for building up and emulation mode of a kind of black silicon material Download PDFInfo
- Publication number
- CN107122554A CN107122554A CN201710302295.1A CN201710302295A CN107122554A CN 107122554 A CN107122554 A CN 107122554A CN 201710302295 A CN201710302295 A CN 201710302295A CN 107122554 A CN107122554 A CN 107122554A
- Authority
- CN
- China
- Prior art keywords
- black silicon
- simulation model
- dimensional
- dimensional simulation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides the two-dimensional simulation model and its method for building up and emulation mode of a kind of black silicon material.Two-dimensional simulation model includes in the present invention：Two dimensional surface substrate and spaced and periodic arrangement multiple two dimensional surface pointed cones in two dimensional surface substrate.Simulating area is used as with any of two-dimensional simulation model construction unit, and detector is set in simulating area, the test to its performance can be achieved, and, the geometric parameter of two-dimensional simulation model can be adjusted, performance parameter that also can be by the black silicon for studying different geometries and then the preparation of the black silicon of guidance.Emulated with two-dimensional simulation model proposed by the present invention, can be on the premise of result correctness be ensured, so that the overall simulation calculation amount of model and simulation time greatly reduce, so as to reduce simulation hardware requirement, simulation efficiency is improved, reliable model basis is provided to the optical absorption in wide spectral range, reflection and transmission performance to analyze black silicon face geometry.
Description
Technical field
The present invention relates to a kind of two-dimensional simulation model of black silicon of pyramid array structure and its method for building up and with golden word
The method of the black silicon two-dimensional simulation model emulation optical absorptive character of tower array structure.
Background technology
Black silicon is showed as a kind of new low reflectivity material near ultraviolet near infrared band (0.25~2.5 μm)
Good absorption characteristic is gone out.In addition, also there is black silicon good visible and near-infrared luminous characteristic and good field to cause hair
Characteristic etc. is penetrated, and cost is low, sensitivity is high --- and the photo-detector based on black silicon even can in the sensitivity of visible light wave range
To reach 10 times of traditional silicon detector.Have in fields such as photodiode, solar cell, photodetector and luminescent devices
The prospect of being widely applied, it might even be possible to for wide digital camera and shooting market, there is very big potential using value.
It is always the popular research topic of field of photovoltaic materials to prepare the black silicon with wide spectrum high-absorbility, except improving
Existing preparation technology, is emulated by black exaflex injection type, studies the black silicon absorptivity of different geometries to instruct the system of black silicon
It is standby, it is also the effective way for obtaining high-absorbility black silicon material.
At present, the emulation for black silicon is the three-dimensional cone-shaped structural model based on geometric parameter random distribution mostly, or
It is the 3 d structure model of cone-shaped structure, although these models are to a kind of rationally approximate of black silicon face structure, but still
Exist that simulation calculation amount is big, simulation time length, the defect high to computer hardware requirement.Simultaneously as simulation calculation amount is big
Limitation, realizing the emulation of optical absorptive character of the black silicon in wide spectral range, there is also certain difficulty.Therefore, how to reduce
Simulation calculation amount, realizes and the high efficiency of black silicon structure is emulated, and then realize optical absorption of the black silicon in wide spectral range
Can technical problem of the analysis as the desired solution in this area.
The content of the invention
The present invention proposes the two-dimensional simulation model and its method for building up and emulation mode of a kind of black silicon of pyramid array structure,
Three-dimensional simulation model in the prior art can be overcome by carrying out emulation with the two-dimensional simulation model of the black silicon of pyramid array structure
Existing simulation calculation amount, high defect is required to computer hardware, improve simulation efficiency, and then be advantageously implemented wider light
Emulated in spectral limit.
To achieve the above object, the present invention provides following technical scheme：
Technical scheme 1：
A kind of two-dimensional simulation model of the black silicon of pyramid array structure, including：Two dimensional surface substrate and in two dimensional surface base
Spaced and periodic arrangement multiple two dimensional surface pointed cones on bottom.
Technical scheme 2：
A kind of method for building up of the black silicon two-dimensional simulation model of pyramid array structure, comprises the following steps：
Step A：Three-dimensional simulation model is obtained according to sample surface morphology；
Extracting black silicon face using SEM has the tetrapyamid shape geometry of random character, based on above-mentioned
Geometry sets up three-dimensional simulation model, and the three-dimensional simulation model includes：Substrate and the spaced arrangement form in substrate
Multiple shapes, the pyramid structure of adjoining dimensions of array；Step B：Three-dimensional simulation model is reduced to two-dimensional simulation model；
Three-dimensional simulation model is obtained using the plane interception step A perpendicular with base plane, the plane is by all
The summit and bottom surface midpoint of pyramid structure, intercept obtained section as two-dimensional simulation model, the two-dimensional simulation model bag
Include：Two dimensional surface substrate and spaced and periodic arrangement multiple two dimensional surface pointed cones in two dimensional surface substrate.
Technical scheme 3：
A kind of optical absorptive character emulation mode of pyramid array structure black silicon material, comprises the following steps：
Step A：Set up the two-dimensional simulation model of the black silicon of pyramid array structure：
A1：Spaced and periodic arrangement multiple two dimensional surfaces by two dimensional surface substrate and in two dimensional surface substrate
Then pointed cone is used as simulating area, knot as two-dimensional simulation model using any of two-dimensional simulation model construction unit
Structure unit includes substrate and a plane pointed cone in substrate, the width of the simulating area and the bottom of any plane pointed cone
The summation of both the distance between portion's width and any two adjacent plane pointed cone is identical, sets height, the bottom of plane pointed cone
The distance between portion's width and any two adjacent plane pointed cone；
A2：Set respectively in simulating area be located at black silicon tip bore directly over planar light source, anti-above light source
Penetrate photo-detector and the transmitted light detector in substrate；
Step B：The setting of material parameter；
The optical constant of base material and black silicon material is measured using film analysis instrument, then using soft material storehouse to phase
Material parameter is answered to be fitted；
Step C：The border setting of physical model；
Simulating area up-and-down boundary condition is set as perfect domination set, simulating area left and right sides border condition is set as week
Phase boundary condition；
Step D：Calculate absorptivity；
Simulating area is divided into N number of grid cell of non-overlapping copies, is calculated using Finite-Difference Time-Domain Method and obtains golden word
The reflectivity and transmissivity of the black silicon of tower array structure, the rate of being absorbed is calculated as below by formula：
A=1-R-T
Wherein, A is absorptivity, and R is reflectivity, and T is transmissivity.
The technical program midplane light source causes light to be incident in black silicon using normal incidence mode.
The material of the material of substrate and black silicon is monocrystalline silicon in the technical program.
The wave-length coverage and base material of the technical program midplane light source and the fitting wave-length coverage of black silicon material are
0.4~1.7 micron.
It is based on minimum fitting root-mean-square error, in fitting root mean square that material parameter is fitted in the step B of the technical program
It is 20 that maximum fitting coefficient is obtained in the case that error is minimum, and the empirical value of imaginary part weight is 3.
The size of grid cell is the μ of 0.00025 0.00025 μm~0.00075 μ m of μ m 0.00075 in the technical program
m。
Compared with other simulation models, beneficial effects of the present invention are essentially consisted in：
The cone-shaped geometry of black silicon face random character is replaced using pyramid array construction geometry model, it is to avoid
The extra simulation calculation amount that random character structure is introduced, by the way that simulating area is arranged into two dimension and usage cycles boundary condition
Realize that the emulation to signal period unit instead of the emulation to large area pyramid array structure, further simplify and emulated
Journey；
With any of two-dimensional simulation model of the present invention construction unit as simulating area, and set in simulating area
Detector, you can realize the test to its performance, also, the geometric parameter of two-dimensional simulation model can be adjusted, and also can be by grinding
Study carefully the performance parameter of the black silicon of different geometries and then instruct the preparation of black silicon；
Emulated, can be made on the premise of result correctness is ensured with two-dimensional simulation model proposed by the present invention
Obtain the overall simulation calculation amount of model and simulation time greatly reduces, so as to reduce simulation hardware requirement, improve emulation effect
Rate, is provided reliably to analyze black silicon face geometry to the optical absorption in wide spectral range, reflection and transmission performance
Model basis.
Brief description of the drawings
Fig. 1 is the structural representation of two-dimensional simulation model.
Fig. 2 is that the embodiment of the present invention carries out simulation calculation optics suction using the black silicon two-dimensional simulation model of pyramid array structure
The structural representation of yield, wherein：1 is reflection light detector, and 2 be planar light source, and 3 be simulating area, and 4 be plane pointed cone, and 5 are
Two dimensional surface substrate, 6 be transmitted light detector.
Fig. 3 provides geometric parameter schematic diagram in two-dimensional simulation model by the embodiment of the present invention.
Fig. 4 is light source incidence when the embodiment of the present invention is emulated using the black silicon two-dimensional simulation model of pyramid array structure
Direction and polarised direction schematic diagram.
Fig. 5 is the simulation result contrast of the cone-shaped geometry of three-dimensional random provided by the present invention and two-dimensional simulation model
Figure；Scheme the reflection, transmission, absorption characteristic figure of (a) for the cone-shaped structure of three-dimensional random, sampling interval is 0.3 μm, height root mean square
For 1.2 μm, the spacing of pointed cone is 0, and the ratio of width to height is approximately 1: 3；Scheme the reflection, transmission, absorption characteristic of (b) for two-dimensional simulation model
Figure, the spacing of pointed cone is 0, and the ratio of width to height is 1: 3.
Embodiment
The principle of the invention is described in detail below in conjunction with the specific embodiment of the invention and Figure of description：
The elaboration process of two-dimensional simulation model proposed by the invention is：
The present embodiment uses FDTD solutions softwares, and gold is passed through by the rough surface structure tools of software
SEM (SEM) figure of the black silicon of word tower array structure, which extracts black silicon face, has the cone-shaped geometry knot of random character
Structure, according to black silicon face there is the cone-shaped geometry of random character to set up many in three-dimensional simulation model, three-dimensional simulation model
Individual shape, the regular arrangement form of pyramid structure unit of adjoining dimensions have the array of fixed the ratio of width to height and spacing, by right
Both the cone-shaped geometrical model of three-dimensional random and three-dimensional simulation model carry out three-dimensional artificial and obtain reflectivity and transmissivity, and then
Calculate and obtain absorptivity to incident light, due to the simulation result and three-dimensional simulation model of the cone-shaped geometrical model of three-dimensional random
Simulation result relatively, therefore, the cone-shaped geometrical model of three-dimensional random is replaced using three-dimensional simulation model, to simplify emulation；
The above-mentioned any one row of three-dimensional simulation model are intercepted using a plane, the plane is vertical with base plane and by same
The summit and bottom surface midpoint of row pyramid structure, the section obtained in three-dimensional simulation model interception are then two-dimensional simulation model.
Such as the structural representation that Fig. 1 is two-dimensional simulation model of the present invention, including two dimensional surface substrate 5 and multiple two dimensional surfaces
Pointed cone 4, multiple shapes, the two dimensional surface pointed cone 4 of adjoining dimensions are spaced in two dimensional surface substrate 5, the equidistant arrangement formation cycle
Property structure.
Embodiment 1：The embodiment of the present invention provides a kind of optical absorptive character emulation of pyramid array structure black silicon material
Method, comprises the following steps：
Step A：Set up the two-dimensional simulation model of the black silicon of pyramid array structure：
A1：By two dimensional surface substrate 5 and in two dimensional surface substrate 5, spaced and periodic arrangement multiple planes are sharp
Then cone 4 sets any of described two-dimensional simulation model plane pointed cone construction unit as emulation as two-dimensional simulation model
Region 3, the construction unit includes two dimensional surface substrate 5 and a plane pointed cone 4 disposed thereon, the width of simulating area 3
It is identical with the summation of both the distance between the bottom width and any two adjacent plane pointed cone 4 of any plane pointed cone 4, if
The distance between height and bottom width and any two adjacent plane pointed cone 4 of face pointed cone 4 are allocated (hereinafter referred to as between pointed cone
Away from)；
A2：In simulating area 3 planar light source 2 is arranged above in black silicon tip cone, in the setting reflection of the top of planar light source 2
Photo-detector 1, sets transmitted light detector 6 in two dimensional surface substrate 5；
Step B：The setting of material parameter；
Base material and black silicon material are monocrystalline silicon in the present embodiment, and the material parameter of the two is entered using same way
Row setting：
Material setting means is specific as follows：Base material is measured and black using F20Filmetrics analyzers respectively first
The optical constant of silicon materials, is then fitted using soft material storehouse to respective material parameter, to ensure fitting precision, fitting
Wave-length coverage it is unsuitable wide, while match for the service band with tester, it is 0.4 that this implementations, which is chosen and is fitted wave-length coverage,
~1.7 μm, after the present embodiment is optimized repeatedly using minimum fitting root-mean-square error as target, it is in lowest mean square root error
0.0599, in the case that the quantity of fitting coefficient is 16, it is determined that the empirical value of maximum fitting coefficient is 20, the experience of imaginary part weight
It is worth for 3；
Step C：The border setting of physical model；
The up-and-down boundary condition of simulating area 3 is set as perfect domination set, set the left and right sides border condition of simulating area 3 as
Periodic boundary condition；
Step D：Calculate absorptivity；
Simulating area 3 is divided into N number of grid cell of non-overlapping copies, the present embodiment sets size of mesh opening to be 0.00025 μ
M × 0.00025 μm, setting time step is 0.0167 femtosecond, is calculated using Finite-Difference Time-Domain Method and obtains pyramid array knot
The reflectivity and transmissivity of the black silicon of structure, is then calculated as below the rate that is further absorbed by formula：
A=1-R-T
Wherein, A is absorptivity, and R is reflectivity, and T is transmissivity.
Two-dimensional simulation model is set up according to above-described embodiment and its simulating area is emulated, as seen in Figure 5：
The simulation result of three-dimensional simulation model and the simulation result of two-dimensional simulation model are basically identical, therefore, of the invention by three-dimensional artificial
The simulating area of model is reduced to the simulating area of two-dimensional simulation model, to realize signal period unit under periodic boundary condition
Emulation replaces the emulation of large area pyramid array structure.
Further, the ratio of width to height (bottom width of plane pointed cone 4 of the invention by adjusting the black silicon of pyramid array structure
With the ratio of height) and pointed cone spacing, repeat simulation process, you can black silicon structure of the research with various geometric is to light
Reflection, transmission, absorbing state.Therefore, the present invention can instruct black silicon by studying the black silicon absorptivity of different geometries
Prepare, and then obtain the black silicon material with high-absorbility.
The present invention is on the premise of simulation result correctness is ensured, it is to avoid the simulation calculation amount that random character parameter is introduced,
Simulating area is reduced, simulation efficiency is greatly improved.Embodiments of the invention are set forth above in association with accompanying drawing, but this hair
It is bright to be not limited to above-mentioned embodiment, above-mentioned embodiment be only it is schematical, rather than restricted,
One of ordinary skill in the art is not departing from present inventive concept and scope of the claimed protection under the enlightenment of the present invention
In the case of, many forms can be also made, these are belonged within the protection of the present invention.
Claims (8)
1. a kind of two-dimensional simulation model of the black silicon of pyramid array structure, it is characterised in that including：Two dimensional surface substrate and two
Spaced and periodic arrangement multiple two dimensional surface pointed cones in dimensional plane substrate.
2. a kind of method for building up of the black silicon two-dimensional simulation model of pyramid array structure, it is characterised in that comprise the following steps：
Step A：Three-dimensional simulation model is obtained according to sample surface morphology；
Extracting black silicon face using SEM has the tetrapyamid shape geometry of random character, based on above-mentioned geometry
Structure sets up three-dimensional simulation model, and the three-dimensional simulation model includes：Substrate and the spaced arrangement form array in substrate
Multiple shapes, the pyramid structure of adjoining dimensions；
Step B：Three-dimensional simulation model is reduced to two-dimensional simulation model；
Three-dimensional simulation model is obtained using the plane interception step A perpendicular with base plane, the plane is by same row gold
The summit and bottom surface midpoint of word tower structure, gained section include as two-dimensional simulation model, the two-dimensional simulation model：Two dimension is flat
Face substrate and spaced and periodic arrangement multiple two dimensional surface pointed cones in two dimensional surface substrate.
3. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character, it is characterised in that including following step
Suddenly：
Step A：Set up the two-dimensional simulation model of the black silicon of pyramid array structure：
A1：Spaced and periodic arrangement multiple two dimensional surface pointed cones by two dimensional surface substrate and in two dimensional surface substrate
As two-dimensional simulation model, simulating area, structure list are then used as using any of two-dimensional simulation model construction unit
Member includes substrate and a plane pointed cone in substrate, the width of the simulating area and the width of any plane pointed cone and
The summation of both the distance between any two adjacent plane pointed cones is identical, sets the height and any two phase of plane pointed cone
The distance between adjacent plane pointed cone；
A2：The planar light source, anti-above light source being located at directly over black silicon plane pointed cone is set respectively in simulating area
Penetrate photo-detector and the transmitted light detector in substrate；
Step B：The setting of material parameter；
The optical constant of base material and black silicon material is measured using film analysis instrument, then using soft material storehouse to corresponding material
Material parameter is fitted；
Step C：The border setting of physical model；
Simulating area up-and-down boundary condition is set as perfect domination set, simulating area left and right sides border condition is set as cycle side
Boundary's condition；
Step D：Calculate absorptivity；
Simulating area is divided into N number of grid cell of non-overlapping copies, is calculated using Finite-Difference Time-Domain Method and obtains pyramid battle array
The reflectivity and transmissivity of the black silicon of array structure, the rate of being absorbed is calculated as below by formula：
A=1-R-T
Wherein, A is absorptivity, and R is reflectivity, and T is transmissivity.
4. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character according to claim 3, it is special
Levy and be, the size of grid cell is 0.00075 μm of 0.00025 μ m, 0.00025 μm~0.00075 μ m.
5. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character according to claim 3, it is special
Levy and be, the planar light source causes light to be incident in black silicon using normal incidence mode.
6. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character according to claim 3, it is special
Levy and be, the material of the material of substrate and black silicon is monocrystalline silicon.
7. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character according to claim 6, it is special
Levy and be, the wave-length coverage and base material of the planar light source and the fitting wave-length coverage of black silicon material are 0.4~1.7 micro-
Rice.
8. a kind of emulation mode of pyramid array structure black silicon material optical absorptive character according to claim 7, it is special
Levy and be, it is 20, imaginary part that material parameter is fitted in the step B to be based on minimum fitting root-mean-square error to obtain maximum fitting coefficient
The empirical value of weight is 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710302295.1A CN107122554B (en) | 2017-05-02 | 2017-05-02 | Two-dimensional simulation model of black silicon material and establishing method and simulation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710302295.1A CN107122554B (en) | 2017-05-02 | 2017-05-02 | Two-dimensional simulation model of black silicon material and establishing method and simulation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107122554A true CN107122554A (en) | 2017-09-01 |
| CN107122554B CN107122554B (en) | 2020-10-27 |
Family
ID=59727353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710302295.1A Expired - Fee Related CN107122554B (en) | 2017-05-02 | 2017-05-02 | Two-dimensional simulation model of black silicon material and establishing method and simulation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107122554B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112613173A (en) * | 2020-12-18 | 2021-04-06 | 北京理工大学 | Method for calculating and simulating absorptivity of gold-black film |
| CN115906593A (en) * | 2023-03-08 | 2023-04-04 | 西南交通大学 | Three-dimensional simulation model building and simulation method for heavily-modified black silicon material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206764A (en) * | 2006-12-20 | 2008-06-25 | 佳能株式会社 | Image processing apparatus and method thereof |
| CN101251930A (en) * | 2007-08-30 | 2008-08-27 | 中国地质大学（武汉） | Three-dimensional geology model customized type undamaged random dividing method |
| CN105512442A (en) * | 2016-01-27 | 2016-04-20 | 北京工业大学 | Statistic analysis based gear precision evaluation method |
| CN105890189A (en) * | 2016-04-07 | 2016-08-24 | 中国华能集团清洁能源技术研究院有限公司 | Photo-thermal combined modeling method for compound paraboloid concentrator |
-
2017
- 2017-05-02 CN CN201710302295.1A patent/CN107122554B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206764A (en) * | 2006-12-20 | 2008-06-25 | 佳能株式会社 | Image processing apparatus and method thereof |
| CN101251930A (en) * | 2007-08-30 | 2008-08-27 | 中国地质大学（武汉） | Three-dimensional geology model customized type undamaged random dividing method |
| CN105512442A (en) * | 2016-01-27 | 2016-04-20 | 北京工业大学 | Statistic analysis based gear precision evaluation method |
| CN105890189A (en) * | 2016-04-07 | 2016-08-24 | 中国华能集团清洁能源技术研究院有限公司 | Photo-thermal combined modeling method for compound paraboloid concentrator |
Non-Patent Citations (1)
| Title |
|---|
| WANG QIQI 等: "Three-Dimensional Reconstruction Techniques Based on One Single SEM Image", 《纳米技术与精密工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112613173A (en) * | 2020-12-18 | 2021-04-06 | 北京理工大学 | Method for calculating and simulating absorptivity of gold-black film |
| CN115906593A (en) * | 2023-03-08 | 2023-04-04 | 西南交通大学 | Three-dimensional simulation model building and simulation method for heavily-modified black silicon material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107122554B (en) | 2020-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Foliage area and architecture of plant canopies from sunfleck size distributions | |
| McIntosh et al. | OPAL 2: Rapid optical simulation of silicon solar cells | |
| Charles-Edwards et al. | Light interception by an isolated plant a simple model | |
| Holst et al. | Application of a new ray tracing framework to the analysis of extended regions in Si solar cell modules | |
| CN107122554A (en) | The two-dimensional simulation model and its method for building up and emulation mode of a kind of black silicon material | |
| Hemming et al. | Material technology of diffuse greenhouse covering materials-influence on light transmission, light scattering and light spectrum | |
| KR20130084863A (en) | Apparatus for measuring the degree of transmission | |
| Burgers et al. | Modelling of luminescent concentrators by ray-tracing | |
| CN102384783B (en) | High-energy laser semi-integrating-sphere array attenuator | |
| Pfreundt et al. | Rapid calculation of the backsheet coupling gain using ray groups | |
| McIntosh et al. | A simple ray tracer to compute the optical concentration of photovoltaic modules | |
| Fritz et al. | Assessing the influence of structural disorder on the plant epidermal cells’ optical properties: a numerical analysis | |
| Powell et al. | Improved spectral response of silicone encapsulanted photovoltaic modules | |
| CN106568692A (en) | Rectangular light scattering-type dust particle counter, and signal analyzing method | |
| CN105470328A (en) | Independent light trap type photovoltaic glass | |
| CN106764680A (en) | The solar simulator optical system of three-junction gallium arsenide solar battery test | |
| CN105784651A (en) | Plant leaf cross section maximum photochemical quantum efficiency determinator and application method | |
| CN104241428B (en) | A kind of two-dimentional silica-based micro-nano photonic crystal solaode | |
| CN202083469U (en) | Black silicon spectral characteristic detecting platform | |
| CN102435318B (en) | Polarized simulation method of remote sensing data by considering influences of skylights on ground surface reflection | |
| Altermatt et al. | Simulation of optical properties of Si wire cells | |
| CN209201006U (en) | A kind of concentration structure | |
| Borojevic et al. | Optical performance analysis of inkjet-textured multicrystalline silicon solar cells using angular distribution matrices | |
| CN202329646U (en) | Dim target ultraviolet star magnitude calibration system | |
| CN106788245A (en) | A kind of device of the full-time measurement PV component power characteristics with rotational workpieces platform |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201027 Termination date: 20210502 |