CN107104168A - UV sensor and preparation method thereof - Google Patents
UV sensor and preparation method thereof Download PDFInfo
- Publication number
- CN107104168A CN107104168A CN201710259982.XA CN201710259982A CN107104168A CN 107104168 A CN107104168 A CN 107104168A CN 201710259982 A CN201710259982 A CN 201710259982A CN 107104168 A CN107104168 A CN 107104168A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- grid
- source electrode
- drain electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- YWIGIVGUASXDPK-UHFFFAOYSA-N 2,7-dioctyl-[1]benzothiolo[3,2-b][1]benzothiole Chemical compound C12=CC=C(CCCCCCCC)C=C2SC2=C1SC1=CC(CCCCCCCC)=CC=C21 YWIGIVGUASXDPK-UHFFFAOYSA-N 0.000 claims description 13
- 238000007641 inkjet printing Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000976 ink Substances 0.000 claims description 11
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229920000620 organic polymer Polymers 0.000 claims description 8
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 8
- 239000004626 polylactic acid Substances 0.000 claims description 8
- -1 Alcohol ester Chemical class 0.000 claims description 7
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Natural products O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000003431 cross linking reagent Substances 0.000 claims description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 claims 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 claims 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- 235000019253 formic acid Nutrition 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000003912 environmental pollution Methods 0.000 description 3
- 229920005570 flexible polymer Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- UVAMFBJPMUMURT-UHFFFAOYSA-N 2,3,4,5,6-pentafluorobenzenethiol Chemical compound FC1=C(F)C(F)=C(S)C(F)=C1F UVAMFBJPMUMURT-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 210000000987 immune system Anatomy 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QMMOXUPEWRXHJS-UHFFFAOYSA-N pent-2-ene Chemical group CCC=CC QMMOXUPEWRXHJS-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OFPPMFSHIKARPG-UHFFFAOYSA-N thieno[3,2-b][1]benzothiole Chemical compound S1C2=CC=CC=C2C2=C1C=CS2 OFPPMFSHIKARPG-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
This application provides a kind of UV sensor and preparation method thereof, the UV sensor includes：Substrate；Grid, is formed at the substrate；Dielectric layer, is formed at the grid；Source electrode and drain electrode, are formed at the dielectric layer, there is the raceway groove for not covering the dielectric layer between the source electrode and drain electrode；Ultraviolet photosensitive organic semiconductor layer, is formed at the raceway groove accordingly, and thickness is more than the source electrode and drain electrode.Can effectively solve high energy consumption in silicon-based devices preparation process, high pollution, it is expensive the problems such as.
Description
Technical field
The application is related to field of semiconductor devices, more particularly to a kind of UV sensor and preparation method thereof.
Background technology
The environment of high-intensity ultraviolet is chronically exposed to, bad influence can be caused to eyes, skin, immune system.For
The uitraviolet intensity in environment is grasped to carry out the safeguard procedures of correlation, typically environment can be obtained using UV sensor
In uitraviolet intensity information.
UV sensor is a kind of electronic device that ultraviolet signal is converted to electric signal.The ultraviolet applied at present
The substrate of sensor is generally silica-base material (including glass) or metal etc., and its active layer includes：Inorganic material (gallium nitride,
Zinc sulphide, zinc oxide etc.) and graphene oxide etc., but its preparation technology is complicated, expensive, environmental pollution is larger.
The content of the invention
In view of this, the embodiment of the present application provides a kind of UV sensor and preparation method thereof, existing to solve
High energy consumption, high pollution, expensive technical problem in technology middle-ultraviolet lamp sensor preparation process.
According to the one side of the embodiment of the present application there is provided a kind of UV sensor, its feature includes：Substrate；Grid
Pole, is formed at the substrate；Dielectric layer, is formed at the grid；Source electrode and drain electrode, are formed at the dielectric layer, described
There is the raceway groove for not covering the dielectric layer between source electrode and drain electrode；Ultraviolet photosensitive organic semiconductor layer, is formed at accordingly
The raceway groove, thickness is more than the source electrode and drain electrode.
It is preferred that, the material of the ultraviolet photosensitive organic semiconductor layer is C8-BTBT and its derivative.
The material of the substrate is flexible material.
The flexible material is PEN films.
The grid, source electrode and the material of drain electrode are metal or organic polymer；The material of the dielectric layer is that have
Machine polymer or inorganic material.
The length range of the raceway groove is 10 nanometers to 1 millimeter.
According to the other side of the embodiment of the present application there is provided a kind of preparation method of UV sensor, including：Shape
Into a substrate；Grid is formed on the substrate；Dielectric layer is formed on the grid；Formed on said dielectric layer
, there is the raceway groove for not covering the dielectric layer between the source electrode and drain electrode in source electrode and drain electrode；Accordingly in raceway groove position
Put to form ultraviolet photosensitive organic semiconductor layer, the thickness of the ultraviolet photosensitive organic semiconductor layer is more than the source electrode and drain electrode.
It is preferred that, with PEN films formation flexible substrates.
Forming ultraviolet photosensitive organic semiconductor layer in the channel location accordingly includes：
The chlorobenzene solution in channel location drop, the chlorobenzene solution includes the C8-BTBT that concentration is 5mg/mL and dense
Spend the PLA for 0.5mg/mL；Heated after drying at room temperature, form the ultraviolet photosensitive organic semiconductor layer.
Forming grid on the substrate includes：One layer of silver inks water of inkjet printing, heat-treated shape on the substrate
Into the grid；Dielectric layer is formed on the grid to be included：One layer of inkjet printing contains PVP and crosslinking agent on the grid
Methylated poly- PMF ink, and the dielectric layer is formed by heating；Source electrode and drain electrode are formed on said dielectric layer
Including：One layer of silver inks water of inkjet printing on said dielectric layer, the heat-treated formation source electrode and drain electrode.
The beneficial effect of the embodiment of the present application includes：The embodiment of the present application provide based on the ultraviolet of OTFT
Line sensor, the raceway groove that active layer uses semiconducting organic polymer material and is formed between source electrode and drain electrode, Ke Yiyou
Effect solve silicon-based devices preparation process in high energy consumption, high pollution, it is expensive the problems such as；The base material of Ultraviolet sensor may be used also
To be flexible polymer, it is set to possess pliability, it is easy to bend, so that relative to silicon-based devices, it is aobvious in Internet of Things, flexibility
Show, there is more preferable application prospect in intelligence wearing, the field such as biologic medical；The preparation technology of the Ultraviolet sensor is simple, can pass through
The techniques such as inkjet printing, drop film, blade coating, spin coating, silk-screen printing, impressing realize that preparation process is strong to the tolerance of environment, without
Glove box, the special device such as dustless, can also be prepared in room temperature environment and air.
Brief description of the drawings
By description referring to the drawings to the embodiment of the present application, the above-mentioned and other purpose of the application, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 is the diagrammatic cross-section for the UV sensor that the embodiment of the present application is provided；
Fig. 2 is the schematic flow sheet of the preparation method for the UV sensor that the embodiment of the present application is provided；
Fig. 3 is the schematic flow sheet of the preparation method for the UV sensor that the embodiment of the present application is provided.
Embodiment
The application is described below based on embodiment, but the application is not restricted to these embodiments.Under
Text is detailed to describe some specific detail sections in the detailed description of the application.Do not have for a person skilled in the art
The description of these detail sections can also understand the application completely.In order to avoid obscuring the essence of the application, known method, mistake
Journey, flow, element and circuit do not have detailed narration.
In addition, it should be understood by one skilled in the art that provided herein accompanying drawing be provided to explanation purpose, and
What accompanying drawing was not necessarily drawn to scale.
It will also be appreciated that in the following description, " circuit " refers to be passed through by least one element or sub-circuit electric
The galvanic circle that connection or electromagnetism are connected and composed." connected when claiming element or circuit " being connected to " another element or element/circuit
" between two nodes when, it can directly be coupled or be connected to another element or there may be intermediary element, element it
Between connection can be physically, in logic or its combination.On the contrary, " connecting when title element " being directly coupled to " or directly
Be connected to " another element when, it is meant that both be not present intermediary element.
Unless the context clearly requires otherwise, otherwise entire disclosure is similar with the " comprising " in claims, "comprising" etc.
Word should be construed to the implication included rather than exclusive or exhaustive implication；That is, being containing for " including but is not limited to "
Justice.
In the description of the present application, it is to be understood that term " first ", " second " etc. are only used for describing purpose, without
It is understood that to indicate or imply relative importance.In addition, in the description of the present application, unless otherwise indicated, the implication of " multiple "
It is two or more.
The UV sensor that the embodiment of the present application is provided is the UV sensor based on OTFT, and it is lived
Property layer using semiconducting organic polymer material and be formed at source electrode and drain electrode between raceway groove, can effectively solve silicon substrate device
High energy consumption in part preparation process, high pollution, it is expensive the problems such as；The base material of the Ultraviolet sensor can also be flexible poly-
Compound, makes it possess pliability, it is easy to bend, so that relative to silicon-based devices, its Internet of Things, Flexible Displays, intelligence wearing,
There is more preferable application prospect in the fields such as biologic medical；The preparation technology of the Ultraviolet sensor is simple, can pass through inkjet printing, drop
The techniques such as film, blade coating, spin coating, silk-screen printing, impressing realize that preparation process is strong to the tolerance of environment, without glove box, dustless
Between wait special device, can also prepare in atmosphere.
Fig. 1 is the diagrammatic cross-section for the Ultraviolet sensor that the embodiment of the present application is provided, including substrate 10, grid 11, electricity is situated between
Matter layer 12, source electrode 13, drain electrode 14 and ultraviolet photosensitive organic semiconductor layer 15.
Substrate 10 is metal or silica-base material, such as silicon chip, glass, metal foil, with certain anti-steam and oxygen
The ability of infiltration, there is preferable surface smoothness.
An electrode layer is formed on the substrate 10 as the grid 11 of OTFT.Then formed on grid 11
Dielectric layer 12.Dielectric layer 12 is using the material with good dielectric properties, including inorganic insulating material such as silica
(SiO2), silicon nitride (Si3N4), aluminum oxide (A12O3), lithium fluoride (LiF), titanium dioxide (TiO2), hafnium oxide (HfO2), five
Aoxidize two smooth (Ta2O5) etc.；Organic insulation such as polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly- 4-Vinyl phenol
(PVP), polystyrene (PS), polymethyl methacrylate (PMMA), poly- ethyl propylene acid esters (PCA), polytetrafluoroethylene (PTFE)
(PTFE), polyimides (PI) or polyethylene (PE) etc..
An electrode layer is re-formed on dielectric layer 12, the electrode layer is divided into two parts, respectively as film crystal
The source electrode 13 of pipe and drain electrode 14.Grid 11, source electrode 13 and drain electrode 14, which are used, has low-resistance material, such as golden (Au), silver-colored (Ag),
Metal and its alloy materials such as magnesium (Mg), aluminium (Al), copper (Cu), calcium (Ca), barium (Ba), nickel (Ni)；Tin indium oxide (ITO), oxygen
Change the metal oxide materials such as zinc-tin (IZO)；The conductive films such as gold size, elargol, carbon paste and conducing composite material.Preparation method can
Sunk with being that vacuum thermal evaporation, magnetron sputtering, the chemical vapor deposition of plasma enhancing, silk-screen printing, printing, spin coating etc. are various
Product method.
The part of non-dielectric layer 12 is the ditch to be formed between source electrode 13 and drain electrode 14 between source electrode 13 and drain electrode 14
Road, distance is that the scope of channel length is 10 nanometers to 1 millimeter between source electrode 13 and drain electrode 14.The shape on the correspondence position of raceway groove
Into ultraviolet photosensitive organic semiconductor layer 15, when there is the ultraviolet photosensitive organic semiconductor layer 15 of ultraviolet light, the reduction of its resistance, production
Raw drain current Idrain；If the luminous intensity increase of ultraviolet light, drain current IdrainAlso increase therewith.Ultraviolet photosensitive organic half
The generation type of conductor layer 15 includes evaporation, printing, blade coating, spin coating, sputtering, chemical deposition etc..
If active layer uses inorganic material, such as gallium nitride, zinc sulphide, zinc oxide and graphene oxide, then prepare
Complex process, expensive, environmental pollution is larger；And in the present embodiment, using ultraviolet photosensitive organic semiconducting materials conduct
The active layer of UV sensor, production technology is relatively easy, and degradable, and environmental pollution is smaller, can solve silicon substrate
High energy consumption in device fabrication process, high pollution, it is expensive the problems such as.
In one embodiment, it is 2,7- dioctyls [1] benzo as the ultraviolet photosensitive organic semiconducting materials of active layer
Thieno [3,2-b] benzothiophene (C8-BTBT) and its derivative.The ultraviolet photosensitive organic of C8-BTBT and its derivative is partly led
The generation type of body layer is the solution processing procedures such as printing, blade coating, spin coating, and solution includes C8-BTBT and its derivative and organic
Solvent, can also further include polymer, such as polymethyl methacrylate (PMMA), polystyrene (PS), PLA
(PLA) etc., and other additives.C8-BTBT and its derivative have higher Photoresponse as the material of active layer,
And it can effectively reduce recombination probability of the exciton in organic crystal.
In one embodiment, the substrate 10 of the UV sensor using flexible polymer as base material, for example
Organic plastics, including PEN (PEN), PET (PET), polyimides (PI) etc..
As base material organic array of Ultraviolet sensor formation can be made to possess good pliability using flexible polymer, work as utilization
Ultraviolet sensor can possess flexible characteristic when being used as organic thin film transistor array, so as to be used as flexible screen
The array of display of curtain is used.Wherein, using PEN PEN as flexible base material, with more excellent
Barrier, anti-uv and heat-resisting quantity, and PEN is relative in various aspects of performance such as toughness, wrinkle resistance and temperature tolerances
It is more balanced, can 121 DEG C of heatproof, therefore be more suitable for the base material of flexible electronic product array of display and use.
Fig. 2 is the schematic flow sheet of the preparation method for the above-mentioned UV sensor that the embodiment of the present application is provided, this method
Including following key step.
S20, forms a substrate.Including the base such as organic plastics (such as PEN, PET, PI) and glass, silica-base material
Bottom.
S21, forms grid in substrate.Generation type includes evaporation, printing, blade coating, spin coating, sputtering, chemical deposition etc.；
Electrode material includes metal (gold, silver, copper, aluminium, platinum, iron, nickel etc.), organic polymer conductive material, inorganic conductive material etc..
S22, forms dielectric layer on grid.Generation type is heavy including evaporation, printing, blade coating, spin coating, sputtering, chemistry
Product etc.；Dielectric layer material includes organic polymer dielectric material for electrical and Inorganic Dielectric Material etc..
S23, forms source electrode and drain electrode on the dielectric layer, exists between source electrode and drain electrode and does not cover the dielectric layer
Raceway groove.Generation type includes evaporation, printing, blade coating, spin coating, sputtering, chemical deposition etc.；Electrode material include metal (gold, silver,
Copper, aluminium, platinum, iron, nickel etc.), organic polymer conductive material, inorganic conductive material etc..Source electrode and the non-dielectric layer that drains
Part be to form raceway groove, it is raceway groove that the source electrode in same electrode layer and drain electrode are divided into distance between two parts, two parts
The scope of length is 10 nanometers to 1 millimeter.
S24, forms ultraviolet photosensitive organic semiconductor layer, the thickness of ultraviolet photosensitive organic semiconductor layer in channel location accordingly
Degree is more than source electrode and drain electrode.Ultraviolet photosensitive organic semiconducting materials are preferably C8-BTBT and its derivative；Generation type is to beat
The solution processing procedures such as print, blade coating, spin coating, solution includes C8-BTBT and its derivative and organic solvent, can further include
Polymer (PMMA, PS, PLA etc.) and other additives.
In addition, for the substrate formed in said process, electrode, dielectric layer and ultraviolet photosensitive organic semiconductor layer, also
Various PROCESS FOR TREATMENTs can be passed through, including：Heating, illumination (ultraviolet lighting, visible ray photograph, infrared light photograph), photoetching, plasma
Processing, various chemical substance treatments (immersion, modification, coating etc.), mechanical treatment etc., to reach corresponding treatment effect.
It in the present embodiment, can be realized, made by techniques such as such as inkjet printing, drop film, blade coating, spin coating, silk-screen printing, impressings
The handling process of standby device process is relatively simple, strong to the tolerance of environment, without glove box, the special device such as dustless,
It can complete to prepare in air.
Fig. 3 is that one kind that the embodiment of the present application is provided uses flexible base material and uses C8-BTBT and its derivative
As the preparation method of the UV sensor of ultraviolet photosensitive organic semiconductor layer, this method comprises the following steps.
S30, forms flexible substrates by material of PEN films.
S31, one layer of silver inks water of inkjet printing, one layer of silver electrode is formed by heating on a flexible substrate.This layer
Silver electrode as UV sensor grid.Heating is to be heated under the conditions of 150 DEG C about 10 minutes, forms about 50nm
Thick silver electrode.
S32, one layer of inkjet printing is containing surfactant (for example, poly- 4-Vinyl phenol PVP) and crosslinking in silver electrode
The ink of agent (for example, poly- (melamine-CO- formaldehyde) PMF that methylates), dielectric layer is formed by heating.At heating
Reason is to be heated under conditions of 150 DEG C about 30 minutes, forms about 2 microns of thick dielectric layers.
S33, one layer of silver inks water of inkjet printing, one layer of silver electrode is formed by heating on the dielectric layer.At heating
Reason is to be heated under conditions of 150 DEG C about one hour, forms one layer of thick silver electrode of about 50nm.The silver electrode is by inkjet printing
For two parts, respectively as source electrode and drain electrode, distance is that channel length is about 50 microns between two electrodes.
S34, said structure is soaked in the ethanol solution of the phenyl-pentafluoride thiophenol (PFBT) containing 1mg/mL.To improve silver
The work content of electrode, soak time is about 10 minutes.
S35, the active layer ink in the channel location drop of said structure, reheating processing forms purple after drying at room temperature
Outer photosensitive organic semiconductor layer.Active layer ink is 0.5mg/mL's for the C8-BTBT and concentration for being 5mg/mL comprising concentration
PLA chlorobenzene solution.Heating is 30 minutes after annealings of heating under the conditions of 120 DEG C.
Above-mentioned preparation process energy consumption, pollution and preparation cost are all relatively lower, and under room temperature environment and air conditionses i.e.
It can complete to prepare.
The preferred embodiment of the application is the foregoing is only, the application is not limited to, for those skilled in the art
For, the application can have various changes and change.It is all any modifications made within spirit herein and principle, equivalent
Replace, improve etc., it should be included within the protection domain of the application.
Claims (10)
1. a kind of UV sensor, it is characterised in that including：
Substrate；
Grid, is formed at the substrate；
Dielectric layer, is formed at the grid；
Source electrode and drain electrode, are formed at the dielectric layer, exist between the source electrode and drain electrode and do not cover the dielectric layer
Raceway groove；
Ultraviolet photosensitive organic semiconductor layer, is formed at the raceway groove accordingly, and thickness is more than the source electrode and drain electrode.
2. UV sensor according to claim 1, it is characterised in that the material of the ultraviolet photosensitive organic semiconductor layer
Material is 2,7- dioctyls [1] benzothiophene simultaneously [3,2-b] benzothiophene (2,7-Dioctyl [1] benzothieno [3,2-b]
[1] benzothiophene, C8-BTBT) and its derivative.
3. UV sensor according to claim 1, it is characterised in that the material of the substrate is flexible material.
4. UV sensor according to claim 3, it is characterised in that the flexible material is poly- naphthalenedicarboxylic acid second two
Alcohol ester (polyethylene naphthalate two formic acid glycol ester, PEN) film.
5. UV sensor according to claim 1, it is characterised in that the grid, source electrode and the material of drain electrode are
Metal or organic polymer；The material of the dielectric layer is organic polymer or inorganic material.
6. UV sensor according to claim 1, it is characterised in that the length range of the raceway groove is 10 nanometers and arrived
1 millimeter.
7. a kind of preparation method of UV sensor, it is characterised in that including：
Form a substrate；
Grid is formed on the substrate；
Dielectric layer is formed on the grid；
Source electrode and drain electrode are formed on said dielectric layer, are existed between the source electrode and drain electrode and are not covered the dielectric layer
Raceway groove；
Accordingly ultraviolet photosensitive organic semiconductor layer, the thickness of the ultraviolet photosensitive organic semiconductor layer are formed in the channel location
Degree is more than the source electrode and drain electrode.
8. preparation method according to claim 7, it is characterised in that forming a substrate includes：
With PEN films formation flexible substrates.
9. preparation method according to claim 7, it is characterised in that form ultraviolet photosensitive in the channel location accordingly
Organic semiconductor layer includes：
The chlorobenzene solution in channel location drop, the chlorobenzene solution includes the C8-BTBT that concentration is 5mg/mL and concentration is
0.5mg/mL PLA (polylactic acid, PLA)；Heated after drying at room temperature, formed described ultraviolet
Photosensitive organic semiconductor layer.
10. preparation method according to claim 7, it is characterised in that
Forming grid on the substrate includes：One layer of silver inks water of inkjet printing, heat-treated formation institute on the substrate
State grid；
Dielectric layer is formed on the grid to be included：One layer of inkjet printing contains poly- 4-Vinyl phenol on the grid
(poly-p-vinylphenol, PVP) and crosslinking agent methylate poly- (melamine-co- formaldehyde) PMF ink, by heating
Form the dielectric layer；
Forming source electrode and drain electrode on said dielectric layer includes：One layer of silver inks water of inkjet printing, is passed through on said dielectric layer
Heating forms the source electrode and drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710259982.XA CN107104168A (en) | 2017-04-20 | 2017-04-20 | UV sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710259982.XA CN107104168A (en) | 2017-04-20 | 2017-04-20 | UV sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107104168A true CN107104168A (en) | 2017-08-29 |
Family
ID=59657090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710259982.XA Pending CN107104168A (en) | 2017-04-20 | 2017-04-20 | UV sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107104168A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258118A (en) * | 2017-12-19 | 2018-07-06 | 深圳先进技术研究院 | High-performance organic transistor photodetector based on bulk heterojunction-layered structure |
| CN108493339A (en) * | 2017-10-30 | 2018-09-04 | 上海幂方电子科技有限公司 | UV sensor and preparation method thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6806542B1 (en) * | 2003-06-30 | 2004-10-19 | Motorola, Inc. | Electronic device having a filled dielectric medium |
| CN101257056A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN101645487A (en) * | 2009-03-27 | 2010-02-10 | 中国科学院化学研究所 | Light-sensing organic field-effect transistor and preparation method thereof |
| CN102473844A (en) * | 2009-08-24 | 2012-05-23 | 国际商业机器公司 | Single and few-layer graphene based photodetecting devices |
| CN202888194U (en) * | 2012-11-14 | 2013-04-17 | 江苏物联网研究发展中心 | Printed flexible thin film solar cell for internet of things |
| CN103137717A (en) * | 2011-12-01 | 2013-06-05 | 上海纳米技术及应用国家工程研究中心有限公司 | Copper doped tin oxide transparent conductive membrane and preparation method thereof |
| CN104024146A (en) * | 2011-08-02 | 2014-09-03 | 光子科学研究所 | Optoelectronic platform with carbon based conductor and quantum dots, and transistor comprising such a platform |
| US20140263945A1 (en) * | 2013-03-14 | 2014-09-18 | Nutech Ventures | Floating-gate transistor photodetector |
| CN104716207A (en) * | 2013-12-15 | 2015-06-17 | 中国科学院大连化学物理研究所 | Structure and manufacturing technology of flexible thin film solar cell |
| US20150287855A1 (en) * | 2006-07-31 | 2015-10-08 | Massachusetts Institute Of Technology | Electro-optical device |
| WO2016126542A1 (en) * | 2015-02-02 | 2016-08-11 | University Of Kansas | Biomolecule-carbon nanostructure nanocomposites for optoelectronic devices |
-
2017
- 2017-04-20 CN CN201710259982.XA patent/CN107104168A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6806542B1 (en) * | 2003-06-30 | 2004-10-19 | Motorola, Inc. | Electronic device having a filled dielectric medium |
| US20150287855A1 (en) * | 2006-07-31 | 2015-10-08 | Massachusetts Institute Of Technology | Electro-optical device |
| CN101257056A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN101645487A (en) * | 2009-03-27 | 2010-02-10 | 中国科学院化学研究所 | Light-sensing organic field-effect transistor and preparation method thereof |
| CN102473844A (en) * | 2009-08-24 | 2012-05-23 | 国际商业机器公司 | Single and few-layer graphene based photodetecting devices |
| CN104024146A (en) * | 2011-08-02 | 2014-09-03 | 光子科学研究所 | Optoelectronic platform with carbon based conductor and quantum dots, and transistor comprising such a platform |
| CN103137717A (en) * | 2011-12-01 | 2013-06-05 | 上海纳米技术及应用国家工程研究中心有限公司 | Copper doped tin oxide transparent conductive membrane and preparation method thereof |
| CN202888194U (en) * | 2012-11-14 | 2013-04-17 | 江苏物联网研究发展中心 | Printed flexible thin film solar cell for internet of things |
| US20140263945A1 (en) * | 2013-03-14 | 2014-09-18 | Nutech Ventures | Floating-gate transistor photodetector |
| CN104716207A (en) * | 2013-12-15 | 2015-06-17 | 中国科学院大连化学物理研究所 | Structure and manufacturing technology of flexible thin film solar cell |
| WO2016126542A1 (en) * | 2015-02-02 | 2016-08-11 | University Of Kansas | Biomolecule-carbon nanostructure nanocomposites for optoelectronic devices |
Non-Patent Citations (3)
| Title |
|---|
| ADRIEN PIERRE: ""Solution-processed image sensors on flexible substrates"", 《FLEXIBLE AND PRINTED ELECTRONICS》 * |
| C.S. SMITHSON: ""Rapid UV-A photo detection using a BTBT organic thin-film transistor enhanced by a 1,5-dichloro-9,10-dintiro-anthracene acceptor"", 《ORGANIC ELECTRONICS》 * |
| JIA HUANG: ""Printable and Flexible Phototransistors Based on Blend of Organic Semiconductor and Biopolymer"", 《ADV. FUNCT. MATER.》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493339A (en) * | 2017-10-30 | 2018-09-04 | 上海幂方电子科技有限公司 | UV sensor and preparation method thereof |
| CN108258118A (en) * | 2017-12-19 | 2018-07-06 | 深圳先进技术研究院 | High-performance organic transistor photodetector based on bulk heterojunction-layered structure |
| CN108258118B (en) * | 2017-12-19 | 2021-07-30 | 深圳先进技术研究院 | High-performance organic transistor photoelectric detector based on bulk heterojunction-layered structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | Tuning the electromechanical properties of PEDOT: PSS films for stretchable transistors and pressure sensors | |
| Chien et al. | A solution processed top emission OLED with transparent carbon nanotube electrodes | |
| KR101153643B1 (en) | Shapable electroluminescent arrangement | |
| Li et al. | Efficient and bright organic light-emitting diodes on single-layer graphene electrodes | |
| Lee et al. | Light sintering of ultra-smooth and robust silver nanowire networks embedded in poly (vinyl-butyral) for flexible OLED | |
| Wang et al. | Fabrication and characterization of OLEDs using PEDOT: PSS and MWCNT nanocomposites | |
| CN107610802B (en) | Transparent conductive film, photoelectric device and preparation method thereof | |
| Aleksandrova | Specifics and Challenges to Flexible Organic Light‐Emitting Devices | |
| Xian et al. | A practical ITO replacement strategy: Sputtering‐free processing of a metallic nanonetwork | |
| Qian et al. | Thin-film organic semiconductor devices: from flexibility to ultraflexibility | |
| Suganuma et al. | Fabrication of transparent and flexible organic field-effect transistors with solution-processed graphene source–drain and gate electrodes | |
| Xu et al. | Silver nanowires modified with PEDOT: PSS and graphene for organic light-emitting diodes anode | |
| Gao et al. | Modification of carbon nanotube transparent conducting films for electrodes in organic light-emitting diodes | |
| CN104109859B (en) | Aqueous etchant, conductive circuit structure thereof and conductive circuit patterning preparation method | |
| US11708499B2 (en) | Method of manufacturing highly conductive polymer thin film including plurality of conductive treatments | |
| CN107104168A (en) | UV sensor and preparation method thereof | |
| Yu et al. | Degradable, ultra-flexible, transparent and conductive film made of assembling CuNWs on chitosan | |
| Yousefi et al. | Fabrication of flexible ITO-free OLED using vapor-treated PEDOT: PSS thin film as anode | |
| WO2014083938A1 (en) | Method for producing transparent electrode and organic el element | |
| CN109270131A (en) | A kind of OTFT ammonia gas sensor and preparation method thereof embedded with micromolecule additive | |
| Xue et al. | Transparent and conformable organic light-emitting diodes for skin-attachable invisible displays | |
| Fallahzadeh et al. | Ultra-smooth poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) films for flexible indium tin oxide-free organic light-emitting diodes | |
| JPWO2015050081A1 (en) | Conductive substrate, manufacturing method thereof, and organic electronic device provided with the conductive substrate | |
| Faraco et al. | Biosubstrates obtained from gellan gum for organic light-emitting diodes | |
| Kim et al. | Self-healable organic light-emitting devices based on electronic textiles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 201612 102, 3 building 1005, nine new highway, Jiuting Town, Songjiang District, Shanghai. Applicant after: Shanghai power Fang Electronic Technology Co., Ltd. Address before: 201612 1006, room 33, building 518, Xinzhuan Road, Songjiang District, Songjiang District, Shanghai, Shanghai. Applicant before: Shanghai power Fang Electronic Technology Co., Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170829 |
|
| RJ01 | Rejection of invention patent application after publication |