CN107093719A - A kind of silicon-carbon cathode material and preparation method thereof - Google Patents
A kind of silicon-carbon cathode material and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to energy storage research field, more particularly to a kind of silicon-carbon cathode material, the silicon-carbon cathode material particle diameter is D1, by nuclear structure, the 1st clad, the 2nd clad ..., the n-th clad, low n+1 clads constitute (n >=2)；The nuclear structure, the 1st clad, the 2nd clad ..., in the n-th clad, the (n+1)th clad, silicon-based compositions content is respectively x0%, x1% ..., xn%, xn+1%；And x0%<x1%<……<xn%, 2≤n.The structure can effectively solve that internal granular layer volumetric expansion is excessive to cause particle layer structure splintering problem, so as to prepare the silicon-carbon cathode material of function admirable.
Description
Technical field
The invention belongs to energy storage material technical field, more particularly to a kind of silicon-carbon cathode material and preparation method thereof.
Background technology
Lithium ion battery is so that its specific energy is big, operating voltage is high, self-discharge rate is small, small volume, the advantage such as lightweight, from it
Since birth, revolutionary change just has been brought to energy storage field, is widely used in various portable electric appts and electronic
In automobile.However as the improvement of people's living standards, higher Consumer's Experience proposes higher requirement to lithium ion battery：
Quality is lighter, use time is longer etc.；The more excellent electrode material of new performance is had to look for solve the above problems.
Current commercialized lithium ion battery negative material is mainly graphite, but because its theoretical capacity is only 372mAhg-1, the active demand of user can not be met；Therefore, the exploitation of the negative material of more height ratio capacity is extremely urgent.It is used as lithium ion
Cell negative electrode material, silicon materials receive much concern always.Its theoretical capacity is 4200mAhg-1, it is the graphite capacity having been commercialized
More than 10 times.And it is relatively inexpensive, environment-friendly etc. excellent with low intercalation potential, low atomic wts, high-energy-density, price
One of gesture, therefore be the optimal selection of high-capacity cathode material of new generation.
But be due to that silicon materials electric conductivity itself is poor and in charge and discharge process volumetric expansion it is big and easily cause material knot
Structure is destroyed and mechanical crushing, causes the decay of its cycle performance fast, is limited it and is widely applied.In order to solve the above problems,
Prior art mainly has silicon grain nanosizing or coated on silicon-carbon cathode material surface, in limitation material volume expansion
While, moreover it is possible to obstruct silica-base material and directly contacted with electrolyte, so as to while cycle performance of battery is improved, reduce charge and discharge
Side reaction in electric process between silica-base material and electrolyte.
Existing clad structure is typically that it is stable that outside coats a Rotating fields as nuclear structure using the big component of volumetric expansion
Component；But this structure is in charging process, nuclear structure lattice dilatation, its expansive force is very huge, existing bag
Coating can not all be limited, and be easy to destroy nuclear structure outer layer, so that the cycle performance of material is deteriorated.
In view of this, it is necessory to propose a kind of silicon-carbon cathode material and preparation method thereof, nuclear structure can be fully solved
The overall structural stability in charging process, so as to prepare the silicon-carbon cathode material of function admirable.
The content of the invention
It is an object of the invention to：In view of the shortcomings of the prior art, a kind of silicon-carbon cathode material provided, the silicon-carbon
Negative material particle diameter is D1, by nuclear structure, the 1st clad, the 2nd clad ..., the n-th clad, low n+1 clads
Constitute (n >=2)；The nuclear structure, the 1st clad, the 2nd clad ..., in the n-th clad, the (n+1)th clad, silicon substrate group
Point content is respectively x0%, x1% ..., xn%, xn+1%；And x0%<x1%<……<xn%, 2≤n.The structure can be effective
Solution internal granular layer volumetric expansion it is excessive cause particle layer structure splintering problem, so as to prepare the silicon-carbon of function admirable
Negative material.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of silicon-carbon cathode material, the silicon-carbon cathode material particle diameter is D1, by nuclear structure, the 1st clad, the 2nd
Clad ..., the n-th clad, low n+1 clads composition (n >=2)；The nuclear structure, the 1st clad, the 2nd cladding
Layer ..., in the n-th clad, the (n+1)th clad, silicon-based compositions content is respectively x0%, x1% ..., xn%, xn+1%；And
x0%<x1%<……<xn%, 2≤n.It is from inside to outside sandwich construction in i.e. whole silicon-carbon cathode, and volumetric expansion in each layer
Larger component ratio about comes higher；The silicone content of internal layer is low, in charging process, and volumetric expansion is small, the body that its outer layers is passed to
Product expansion is small, therefore layer structure will more be stablized, and silicon-carbon cathode material has the chemical property more added with two.
Improved as one kind of silicon-carbon cathode material of the present invention, the 0≤x0%<x1%<……<xn%≤1, i.e., and knot
Structure can not contain silicon-based compositions, and the n-th clad can be with all silicon-based compositions.
Improved as one kind of silicon-carbon cathode material of the present invention, 1 μm≤D1≤100 μm, i.e. prepared silica-base material is
Micron particles.
As silicon-carbon cathode material of the present invention one kind improve, the nuclear structure, the 1st clad, the 2nd clad ...,
In n-th clad, non-silicon-based component can also be included.
Improved as one kind of silicon-carbon cathode material of the present invention, the silicon-based compositions are the oxide of elemental silicon or/and silicon；
The non-silicon-based component includes conductive agent or/and non-silicon-based negative electrode active material, and the conductive agent includes super conductive carbon, acetylene
At least one of black, CNT, Ketjen black, conductive carbon black, graphene, the non-silicon-based negative electrode active material include natural
Graphite, Delanium, carbonaceous mesophase spherules, soft carbon, hard carbon, petroleum coke, carbon fiber, thermal decomposed resins carbon, lithium carbonate, non-silicon alloy
At least one of negative material.
As silicon-carbon cathode material of the present invention one kind improve, the 1st clad, the 2nd clad ..., n-th cladding
In layer, the (n+1)th clad, the polymer carbonization component that traditional clad or/and monomer in situ polymerization are obtained can also be included.
Improved as one kind of silicon-carbon cathode material of the present invention, traditional clad is that traditional clad raw material is carbonized
Arrive；Traditional clad raw material is phenolic resin, melamine resin, Vinylidene Chloride, pitch, polyethylene, stearic acid, PVC, poly- third
Alkene nitrile, natural rubber, butadiene-styrene rubber, butadiene rubber, EP rubbers, polyethylene, polypropylene, polyamide, poly terephthalic acid second
At least one in diol ester, nano cupric oxide, nano magnesia, nano-titanium oxide, nano aluminium oxide, nano-graphite, graphite flake
Kind；The monomer includes esters of acrylic acid, methyl acrylic ester, styrene, acrylonitrile, methacrylonitrile, polyethylene glycol two
Methacrylate, polyethyleneglycol diacrylate, divinylbenzene, trimethylol-propane trimethacrylate, methyl-prop
E pioic acid methyl ester, N, N- DMAAs, N- acryloyl morpholines, methyl acrylate, ethyl acrylate, butyl acrylate, just
Hexyl 2-propenoate, 2- cyclohexyl acrylates, dodecyl acrylate, GDMA, polyethylene glycol dimethyl propylene
Olefin(e) acid ester, polyethylene glycol dimethacrylate, neopentylglycol diacrylate, 1,6 hexanediol diacrylate, tetraethylene glycol
Diacrylate, tri (propylene glycol) diacrylate, ethoxyquin tetramethylol methane tetraacrylate, the third oxidation pentaerythrite propylene
Acid esters, double-Glycerin tetraacrylate, pentaerythritol triacrylate, trimethylol-propane trimethacrylate, third
Aoxidize glycerol tri-acrylate, three (2- ethoxys) isocyanuric acid triacrylate trimethylolpropane trimethacrylates, the third oxygen
Base trimethylolpropane trimethacrylate, ethoxylated trimethylolpropane triacrylate, ethoxylation trihydroxy methyl third
At least one of alkane triacrylate, ethoxylated trimethylolpropane triacrylate, tetramethylol methane tetraacrylate.
Present invention additionally comprises a kind of preparation method of silicon-carbon cathode material, mainly comprise the following steps：
Step 1, selection silica-base material content is x0% nuclear structure particle is standby；
Step 2, it is respectively x to prepare silicon-based compositions content1% ..., xn%, xn+1% the 1st clad slurry, the 2nd bag
Coating slurry ..., the n-th clad slurry, the (n+1)th clad slurry it is standby；
Step 3, nuclear structure particle step 1 obtained, is coated in the 1st clad slurry, is carbonized afterwards；
Coated, be carbonized ... until carbonization after being coated in the (n+1)th clad slurry, that is, obtain in the 2nd clad slurry again
Finished product silicon-carbon cathode material；
Or
Step 3 ', the nuclear structure particle that step 1 is obtained, the 1st clad slurry prepared successively in step 2, the 2nd
Clad slurry ..., coated in the n-th clad slurry, the (n+1)th clad slurry, finally carbonization obtains finished silicon
Carbon negative pole material.
Improve, can also be wrapped in the i-th clad slurry as one kind of silicon-carbon cathode material preparation method of the present invention
Containing traditional clad raw material or/and polymer monomer, 1≤i≤n+1.
Improve, polymerize when containing in the low i layers of clad as one kind of silicon-carbon cathode material preparation method of the present invention
During thing monomer, after corresponding ith encapsulation steps described in step 3, inducer need to be added and promote monomer in situ polymerization to be formed
Polymer；The inducing substance is initiator, and the initiator includes isopropyl benzene hydroperoxide, t-butyl hydrogen peroxide, peroxide
Change the special butyl ester of diisopropylbenzene (DIPB), di-tert-butyl peroxide, dibenzoyl peroxide, dilauroyl peroxide, perbenzoic acid, peroxide
Change at least one of the special butyl ester of pivalic acid, di-isopropyl peroxydicarbonate, di-cyclohexylperoxy di-carbonate.
The advantage of the invention is that：
1. be from inside to outside sandwich construction in whole silicon-carbon cathode, and the larger component ratio of volumetric expansion is about in each layer
Come higher；The silicone content of internal layer is low, in charging process, and volumetric expansion is small, and the volumetric expansion of its outer layers conduction is small, therefore outer layer
Structure will more be stablized, and silicon-carbon cathode material has more excellent chemical property；
2. containing small molecule monomer in-situ polymerization component in clad, it can effectively improve each group inside clad and divide it
Between, the connection effect between this clad and a upper clad, improve electric conductivity；Because small molecule monomer is easier and clad
It can also be infiltrated in slurry after other components infiltration, uniform mixing, cladding with endothecium structure；And in-situ polymerization be more readily formed it is whole
The conductive network structure of body.
Embodiment
The present invention and its advantage are described in detail with reference to embodiment, but the embodiment party of the present invention
Formula not limited to this.
Comparative example, prepares the silicon-carbon cathode material that particle diameter is 12 μm；
It is prepared by step 1. nuclear structure：100nm silicon grain is selected, it is uniform with conductive agent component (silicon grain content is 90%)
Pelletizing is carried out after mixing, the second particle nuclear structure that particle diameter is about 12 μm is obtained stand-by；
Step 2., as covering material, is coated to the nuclear structure that step 1 is prepared, is carbonized afterwards from pitch,
Obtain the silicon-carbon cathode material that particle diameter is 12 μm.
Embodiment 1, is that the present embodiment comprises the following steps with comparative example difference：
Prepare two layers of clad structure silicon-carbon cathode material that particle diameter is 12 μm：
It is prepared by step 1. nuclear structure：A diameter of 1 μm of synthetic graphite particles are selected as nuclear structure；
It is prepared by the clad slurry of step 2. the 1st:100nm silicon grain is selected, (silicone content is with conductive agent component, pitch
90%) it is well mixed, prepares the 1st clad slurry；
Selection pitch is the 2nd clad slurry.
The nuclear structure particle that step 3. obtains step 1, is coated in the 1st clad slurry, is carbonized afterwards
Obtain the particle that particle diameter is about 12 μm；Coated again in the 2nd clad slurry, carbonization obtains finished silicon Carbon anode
Material；Embodiment 2, difference from Example 1 is, the present embodiment comprises the following steps：
Prepare three layers of clad structure silicon-carbon cathode material that particle diameter is 12 μm：
It is prepared by step 1. nuclear structure：A diameter of 1 μm of synthetic graphite particles are selected as nuclear structure；
It is prepared by the clad slurry of step 2. the 1st:100nm silicon grain is selected, (silicone content is with conductive agent component, pitch
50%) it is well mixed, prepares the first clad slurry；
It is prepared by the 2nd clad slurry:100nm silicon grain is selected, is mixed with conductive agent component, pitch (silicone content is 90%)
Close uniform, prepare the 2nd clad slurry；
Selection pitch is the 3rd clad slurry.
The nuclear structure particle that step 3. obtains step 1, is coated in the 1st clad slurry, is carbonized afterwards
Obtain the particle that particle diameter is about 7 μm；Coated again in the 2nd clad slurry, it is about 12 μ that carbonization, which obtains particle diameter,
M particle, is finally coated, being carbonized obtains finished silicon carbon negative pole material in the 3rd clad slurry；
Remaining is same as Example 1, repeats no more.
Embodiment 3, difference from Example 1 is, the present embodiment comprises the following steps：
Prepare four layers of clad structure silicon-carbon cathode material that particle diameter is 12 μm：
It is prepared by step 1. nuclear structure：A diameter of 1 μm of synthetic graphite particles are selected as nuclear structure；
It is prepared by the clad slurry of step 2. the 1st:100nm silicon grain is selected, (silicone content is with conductive agent component, pitch
50%) it is well mixed, prepares the 1st clad slurry；
It is prepared by the 2nd clad slurry:100nm silicon grain is selected, is mixed with conductive agent component, pitch (silicone content is 70%)
Close uniform, prepare the 2nd clad slurry；
It is prepared by the 3rd clad slurry:100nm silicon grain is selected, is mixed with conductive agent component, pitch (silicone content is 90%)
Close uniform, prepare the 3rd clad slurry；
Selection pitch is the 4th clad slurry.
The nuclear structure particle that step 3. obtains step 1, is coated in the 1st clad slurry, is carbonized afterwards
Obtain the particle that particle diameter is about 5 μm；Coated again in the 2nd clad slurry, it is about 8 μm that carbonization, which obtains particle diameter,
Particle；Coated again in the 3rd clad slurry, carbonization obtains the particle that particle diameter is about 12 μm, finally in the 4th bag
Coated in coating slurry, being carbonized obtains finished silicon carbon negative pole material；
Remaining is same as Example 1, repeats no more.
Embodiment 4, difference from Example 1 is, the present embodiment comprises the following steps：
Prepare three layers of clad structure silicon-carbon cathode material that particle diameter is 15 μm：
Step 1：Prepared by nuclear structure, selection particle diameter is the 200nm sub- silicon of oxidation, Delanium hybrid particles are as once
Grain, wherein the sub- silicone content of oxidation is 10%；CNT, super conductive carbon mix are conductive agent component；By silane coupler,
Primary particle is mixed, and a small amount of N is added afterwards, N- dimethyl pyrrolidone solution is mediated, and obtains primary particle dispersed
Slurry；Conductive agent, PVP are mixed, a small amount of N is added afterwards, N- dimethyl pyrrolidone solution is mediated, and obtains graphene
Dispersed slurry；Two kinds of slurries are uniformly mixed, pelletizing obtains the nuclear structure that particle diameter is 3 μm afterwards；
It is prepared by the clad slurry of step 2. the 1st:The 100nm sub- silicon grain of oxidation is selected, with conductive agent component, pitch, first
Base acrylonitrile (the sub- silicone content of oxidation is 50%) is well mixed, prepares the 1st clad slurry；
It is prepared by the 2nd clad slurry:100nm silicon grain is selected, with conductive agent component, pitch, N, N- dimethyl allenes
Acid amides (the sub- silicone content of oxidation is 90%) is well mixed, prepares the 2nd clad slurry；
Selection pitch is the 3rd clad slurry.
The nuclear structure particle that step 3. obtains step 1, is placed in the solution existed containing catalyst, carries out in situ poly-
Close；It is placed in the 1st clad slurry and is coated again, add catalyst so that the monomer polymerization in clad, carries out afterwards
Carbonization obtains the particle that particle diameter is about 7 μm；Coated again in the 2nd clad slurry, add catalyst so that bag
Monomer polymerization in coating, carbonization obtains the particle that particle diameter is about 15 μm, finally cladding, carbon in the 3rd clad slurry
Change and obtain finished silicon carbon negative pole material；
Embodiment 5, difference from Example 1 is, the present embodiment comprises the following steps：
Prepare 10 layers of clad structure silicon-carbon cathode material that particle diameter is 100 μm：
It is prepared by step 1. nuclear structure：A diameter of 5 μm of synthetic graphite particles are selected as nuclear structure；
It is prepared by the clad slurry of step 2. the 1st:100nm silicon grain is selected, with conductive agent component (Super P), pitch
(silicone content is 10%) is well mixed, and prepares the 1st clad slurry；
It is prepared by the 2nd clad slurry:100nm silicon grain is selected, is mixed with conductive agent component, pitch (silicone content is 20%)
Close uniform, prepare the 2nd clad slurry；
It is prepared by the i-th clad slurry:100nm silicon grain is selected, (silicone content is (i* with conductive agent component, pitch
10) %) it is well mixed, prepare the i-th clad slurry (1≤i≤9)；
Selection pitch is the 10th clad slurry.
The nuclear structure particle that step 3. obtains step 1, is coated in the 1st clad slurry, is carbonized afterwards
Obtain the particle that particle diameter is about 10 μm；……；Coated again in the i-th clad slurry, carbonization obtains particle diameter
About
μm (i*10) particle；……；Finally coated in the 10th clad slurry, being carbonized obtains finished silicon Carbon anode
Material；
Remaining is same as Example 1, repeats no more.
Embodiment 6, difference from Example 1 is, the present embodiment comprises the following steps：
Prepare two layers of clad structure silicon-carbon cathode material that particle diameter is 1 μm：
It is prepared by step 1. nuclear structure：A diameter of 0.2 μm of synthetic graphite particles are selected as nuclear structure；
It is prepared by the clad slurry of step 2. the 1st:50nm silicon grain is selected, with conductive agent component (CNT), pitch
(silicone content is 90%) is well mixed, and prepares the 1st clad slurry；
Selection pitch is the 2nd clad slurry.
The nuclear structure particle that step 3. obtains step 1, is coated in the 1st clad slurry, is carbonized afterwards
Obtain the particle that particle diameter is about 1 μm；Coated again in the 2nd clad slurry, carbonization obtains finished silicon Carbon anode
Material；
Remaining is same as Example 1, repeats no more.
Battery is assembled：It is the silicon-carbon cathode material that comparative example, embodiment 1- embodiments 10 are prepared and conductive agent, Nian Jie
Agent, stirring solvent obtain electrode slurry, apply form negative electrode on a current collector afterwards；By negative electrode and anode electrode
The assembling of (cobalt acid lithium is active material), barrier film obtains naked battery core, and bag is entered afterwards and carries out top side seal, drying, fluid injection, standing, change
Resultant battery is obtained into, shaping, degasification.
Material properties test：
Gram volume is tested：Each embodiment and comparative example silicon carbon material are prepared by following flow in 25 DEG C of environment
Battery core carries out gram volume test：Stand 3min；0.2C constant-current charges are to 4.2V, 4.2V constant-voltage charges to 0.05C；Stand 3min；
0.2C constant-current discharges obtain discharge capacity D1 to 3.0V；Stand 3min；0.2C constant-current discharges are to 3.85V；It is complete after standing 3min
Into volume test, the weight of silicon carbon material, that is, obtain negative pole gram volume, acquired results are shown in Table 1 in D1 divided by negative electricity pole piece.
High rate performance is tested：Each embodiment and comparative example silicon carbon material are prepared by following flow in 25 DEG C of environment
Battery core carry out high rate performance test：Stand 3min；0.2C constant-current charges are to 4.2V, 4.2V constant-voltage charges to 0.05C；Stand
3min；0.2C constant-current discharges obtain discharge capacity D1 to 3.0V；Stand 3min；0.2C constant-current charges to 4.2V, 4.2V constant pressures is filled
Electricity is to 0.05C；Stand 3min；2C constant-current discharges obtain discharge capacity D21 to 3.0V；Stand 3min；High rate performance is completed afterwards
Test, battery high rate performance=D2/D1*100%, acquired results are shown in Table 1.
Loop test:The electricity prepared in 25 DEG C of environment by following flow to each embodiment and comparative example silicon carbon material
Core carries out loop test：Stand 3min；0.2C constant-current charges are to 4.2V, 4.2V constant-voltage charges to 0.05C；Stand 3min；0.2C
Constant-current discharge obtains discharge capacity D1 to 3.0V；3min is stood, " 0.2C constant-current charges to 4.2V, 4.2V constant-voltage charges are extremely
0.05C；Stand 3min；0.2C constant-current discharges obtain discharge capacity Di to 3.0V；3min " is stood to repeat to obtain D300 299 times,
Loop test is completed afterwards, and calculating capability retention is D300/D1*100%, and acquired results are shown in Table 1.
Battery core gram volume, circulation volume conservation rate and high rate performance that table 1, different silicon-carbon cathode materials are prepared
It can be obtained by table 1, silicon-carbon cathode material prepared by the present invention, with more outstanding chemical property：It is i.e. higher
Gram volume, more preferable circulation volume conservation rate and higher high rate performance.Specifically, comparative examples are implemented with embodiment 1-
Example 3 can be obtained, and with the increase of cladding layer number, cycle performance, the high rate performance of battery are obviously improved.Comparative example 2 with
Embodiment 4 can be obtained, when containing monomer in situ polymerization, can further lift the performance of material.It can be obtained by each embodiment, this hair
It is bright that there is universality, it is adapted to various silicon-carbon cathode materials and preparation method thereof.
The announcement and teaching of book according to the above description, those skilled in the art in the invention can also be to above-mentioned embodiment party
Formula is changed and changed.Therefore, the invention is not limited in above-mentioned embodiment, every those skilled in the art exist
Made any conspicuously improved, replacement or modification belong to protection scope of the present invention on the basis of the present invention.This
Outside, although having used some specific terms in this specification, these terms merely for convenience of description, not to the present invention
Constitute any limitation.
Claims (10)
1. a kind of silicon-carbon cathode material, its spy is being, the particle diameter of the silicon-carbon cathode material is D1, and by nuclear structure,
1 clad, the 2nd clad ..., the n-th clad, the (n+1)th clad composition, wherein, n >=2；
Nuclear structure, the 1st clad, the 2nd clad ..., in the n-th clad, the (n+1)th clad, silicon-based compositions content point
Wei not x0%, x1% ..., xn%, xn+1%；
And x0<x1<……<xn,2≤n。
2. a kind of silicon-carbon cathode material described in claim 1, it is characterised in that 0≤x0%<x1%<……<xn%≤
100%, 0≤xn+1%.
3. the silicon-carbon cathode material described in a kind of claim 1, it is characterised in that 1 μm≤D1≤100 μm.
4. the silicon-carbon cathode material described in a kind of claim 1, it is characterised in that the nuclear structure, the 1st clad, the 2nd cladding
Layer ..., in the n-th clad, in addition to non-silicon-based component.
5. the silicon-carbon cathode material described in a kind of claim 4, it is characterised in that the silicon-based compositions are elemental silicon or/and silicon
Oxide；The non-silicon-based component includes conductive agent or/and non-silicon-based negative electrode active material, and the conductive agent includes super lead
At least one of electrical carbon, acetylene black, CNT, Ketjen black, conductive carbon black, graphene, the non-silicon-based negative electrode active material
Matter includes native graphite, Delanium, carbonaceous mesophase spherules, soft carbon, hard carbon, petroleum coke, carbon fiber, thermal decomposed resins carbon, carbonic acid
At least one of lithium, non-silicon alloy material of cathode.
6. the silicon-carbon cathode material described in a kind of claim 1, it is characterised in that the 1st clad, the 2nd cladding
Layer ..., in the n-th clad, the (n+1)th clad, also include the polymerization that traditional clad or/and monomer in situ polymerization are obtained
Thing carbonization component.
7. the silicon-carbon cathode material described in a kind of claim 6, it is characterised in that traditional clad is that traditional clad is former
Material charing is obtained；Traditional clad raw material be phenolic resin, melamine resin, Vinylidene Chloride, pitch, polyethylene, stearic acid,
It is PVC, polyacrylonitrile, natural rubber, butadiene-styrene rubber, butadiene rubber, EP rubbers, polyethylene, polypropylene, polyamide, poly- to benzene
In naphthalate, nano cupric oxide, nano magnesia, nano-titanium oxide, nano aluminium oxide, nano-graphite, graphite flake
At least one；The monomer includes esters of acrylic acid, methyl acrylic ester, styrene, acrylonitrile, methacrylonitrile, poly-
Ethylene glycol dimethacrylate, polyethyleneglycol diacrylate, divinylbenzene, trimethylol propane trimethyl acrylic acid
Ester, methyl methacrylate, N, N- DMAAs, N- acryloyl morpholines, methyl acrylate, ethyl acrylate, propylene
Acid butyl ester, positive Hexyl 2-propenoate, 2- cyclohexyl acrylates, dodecyl acrylate, GDMA, polyethylene glycol
Dimethylacrylate, polyethylene glycol dimethacrylate, neopentylglycol diacrylate, 1,6-HD diacrylate
Ester, tetraethylene glycol diacrylate, tri (propylene glycol) diacrylate, ethoxyquin tetramethylol methane tetraacrylate, the third oxidation season
Penta tetrol acrylate, double-Glycerin tetraacrylate, pentaerythritol triacrylate, trimethylol propane trimethyl
Acrylate, glycerol propoxylate triacrylate, three (2- ethoxys) isocyanuric acid triacrylate trimethylolpropane tris third
Olefin(e) acid ester, propoxylation trimethylolpropane trimethacrylate, ethoxylated trimethylolpropane triacrylate, ethoxylation
In trimethylolpropane trimethacrylate, ethoxylated trimethylolpropane triacrylate, tetramethylol methane tetraacrylate
It is at least one.
8. the preparation method of the silicon-carbon cathode material described in a kind of claim 1, it is characterised in that mainly comprise the following steps：
Step 1, selection silicon-based compositions content is x0% nuclear structure particle is standby；
Step 2, it is respectively x to prepare silicon-based compositions content1% ..., xn%, xn+1% the 1st clad slurry, the 2nd clad
Slurry ..., the n-th clad slurry, the (n+1)th clad slurry it is standby, wherein, n >=2；
Step 3, nuclear structure particle step 1 obtained, is coated in the 1st clad slurry, is carbonized afterwards；Exist again
Coated, be carbonized ... until carbonization after being coated in the (n+1)th clad slurry, that is, obtain finished product in 2nd clad slurry
Silicon-carbon cathode material；
Or
Step 3 ', the nuclear structure particle that step 1 is obtained, the 1st clad slurry prepared successively in step 2, the 2nd cladding
Layer slurry ..., coated in the n-th clad slurry, the (n+1)th clad slurry, it is negative that finally carbonization obtains finished silicon carbon
Pole material.
9. the preparation method of the silicon-carbon cathode material described in a kind of claim 8, it is characterised in that in the i-th clad slurry also
Include traditional clad raw material or/and polymer monomer, 1≤i≤n+1.
10. the preparation method of the silicon-carbon cathode material described in a kind of claim 9, it is characterised in that when in i-th clad
During containing polymer monomer, in step 3 after corresponding ith encapsulation steps, inducer need to be added and promote polymer monomer
In-situ polymerization formation polymer.
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| CN111977658A (en) * | 2020-08-26 | 2020-11-24 | 成都新柯力化工科技有限公司 | Method for continuously producing silicon-carbon negative electrode material of lithium battery |
| CN114195116A (en) * | 2020-09-02 | 2022-03-18 | 北京清创硅谷科技有限公司 | Carbon-silicon composite material and preparation method thereof |
| WO2023217240A1 (en) * | 2022-05-13 | 2023-11-16 | 陕西埃普诺新能源科技有限公司 | Cavity-customized carbon-silicon composite material, and preparation method therefor and use thereof |
| EP4365979A1 (en) * | 2022-11-07 | 2024-05-08 | Hon Hai Precision Industry Co., Ltd. | Silicon-carbon composite material, preparation method thereof and preparation method of silicon-carbon composite negative electrode slurry |
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