CN107091686A - A kind of acoustic resonator of use multi-layer-coupled phonon crystal - Google Patents
A kind of acoustic resonator of use multi-layer-coupled phonon crystal Download PDFInfo
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- CN107091686A CN107091686A CN201710323448.0A CN201710323448A CN107091686A CN 107091686 A CN107091686 A CN 107091686A CN 201710323448 A CN201710323448 A CN 201710323448A CN 107091686 A CN107091686 A CN 107091686A
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- 239000013078 crystal Substances 0.000 title claims abstract description 93
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
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Abstract
The invention belongs to acoustic function devices field, disclose a kind of acoustic resonator of use multi-layer-coupled phonon crystal, formed by multiple different scattering object sizes are nested with the two-dimension phonon crystal of different crystalline lattice coefficient, from the inside to the outside, first layer phonon crystal is to be made up of center for 3 × 3 scattering volume arrays of single-point vacancy defect, second layer phonon crystal is made up of 2 × 2 scattering volume arrays, third layer phonon crystal is to be made up of center for 3 × 3 scattering volume arrays of single-point vacancy defect, 4th layer of phonon crystal is to be made up of center for 5 × 5 scattering volume arrays of multiple spot vacancy defect.The present invention can realize the efficient detection and capture of faint sound wave;Compared with the single phonon crystal of same volume, multi-layer-coupled phonon crystal has stronger acoustic localization effect, higher acoustic pressure multiplication factor.
Description
Technical field
The invention belongs to novel acoustic function element field, and in particular to a kind of sound wave of use multi-layer-coupled phonon crystal
Resonator, for realizing efficient detection, sensing and capture to faint sound wave.
Background technology
Phonon crystal is as a kind of new synthetic material or structure, because it is with unique acoustic band gap characteristic
It is used to design, develops sound insulation and noise reduction material (such as:Chinese invention patent CN104389935A, CN104141722A,
CN104538019A etc.).In addition, correlative study in the recent period shows that the pass-band performance of phonon crystal contains abundant physical effect,
Wherein acoustic localization effect is received significant attention.Because acoustic localization effect has the characteristics of sound wave capture, acoustic pressure are amplified,
So the acoustic resonator based on phonon crystal can be developed using the effect.The production of current phonon crystal acoustic localization effect
Life mainly has three kinds of modes:(1) vacancy defect is manufactured, that is, removes the cycle of scattering object in some scattering objects, destruction phonon crystal
Property;(2) incorporation impurity or other scattering objects, break the purity and spatial symmetry of phonon crystal;(3) unsymmetrical knot is designed
Structure.Because stronger acoustic pressure amplifying power is one of important indicator of acoustic resonator superperformance, need to strengthen phonon
The acoustic localization ability of crystal.The acoustic localization effect produced for three of the above type, increasing the number of scattering object is
Current relatively effective means.However, scattering object, which increases, means the increase of phonon crystal overall volume, in addition with scattering
Body number increases, and the enhancing effect of acoustic localization harmony pressure amplifying power constantly weakens.How in limited device volume
In the range of, it is that the weight of acoustic resonator is developed using phonon crystal to realize powerful acoustic localization effect, sound wave amplifying power
Want one of problem.
The content of the invention
Above-mentioned condition based on prior art, the invention discloses a kind of sound wave resonance of use multi-layer-coupled phonon crystal
Device, the efficient detection that faint sound wave is realized with this, sensing and capture.
It is of the invention to be realized by following technical proposals, a kind of acoustic resonator of use multi-layer-coupled phonon crystal, by
Multiple different scattering object sizes are nested with the two-dimension phonon crystal of different crystalline lattice coefficient to be formed.
Specifically, including four layers of two-dimension phonon crystal, from the inside to the outside, it by center is that single-point is empty that first layer phonon crystal, which is,
3 × 3 scattering volume arrays of position defect are constituted, and second layer phonon crystal is made up of 2 × 2 scattering volume arrays, and third layer phonon is brilliant
Ti Shiyou centers for single-point vacancy defect 3 × 3 scattering volume arrays constitute, the 4th layer of phonon crystal be by center be multiple spot room
5 × 5 scattering volume arrays of defect are constituted.
The scattering object that four layers of photonic crystal structure are selected all is sound-hard material PMMA and cross-sectional area is all circle, its
Lattice shape is square, and substrate is air.When Acoustic Wave Propagation enters the acoustic resonator, first and second layer of phonon crystal
Cross-couplings effect occurs for the imperfect tape of passband and third and fourth layer of phonon crystal, causes the sound wave of multiple scattering in first layer sound
Strong in-phase stacking effect occurs in sub- germ nucleus cavity, and acoustic pressure is exaggerated strongly, acoustic energy is accumulated at this, so that
Form extremely strong acoustic localization effect, acoustic pressure amplifying power.
In one embodiment of the present invention, the shape of cross section of phonon crystal scattering object can be selected else as triangle, four-bladed vane
Type.
In one embodiment of the present invention, phonon crystal diffuser material can be selected else as steel, plastics, plank.
In one embodiment of the present invention, the lattice shape of phonon crystal can be selected else as triangle, rectangle.
In one embodiment of the present invention, the space dimensionality of phonon crystal can be selected else as three-dimensional, and each phonon crystal is three-dimensional
Nest together.
In one embodiment of the present invention, the phonon crystal number of plies can increase to five layers, six layers.
The features of the present invention and advantage are:
(1) multi-layer-coupled photonic crystal structure is used, it is possible to achieve the efficient detection of faint sound wave and capture.With same volume
Single phonon crystal compare, multi-layer-coupled phonon crystal has stronger acoustic localization effect, higher acoustic pressure times magnification
Number.
(2) compared with the single photonic crystal structure with same sound pressure amplifying power, the multi-layer-coupled phonon of use is brilliant
Body structure has smaller volume, has saved space and cost.
(3) due to the symmetry of structure, the multi-layer-coupled photonic crystal structure used can be with significant response multiple directions
Sound wave.
According to These characteristics, it can apply to the efficient detection, sensing and capture of faint sound wave.
Brief description of the drawings
Fig. 1 is the acoustic resonator three dimensional structure diagram of the present invention;
Fig. 2 is the acoustic resonator two-dimensional structure schematic diagram of the present invention;
Fig. 3 is the two-dimensional structure schematic diagram of first layer phonon crystal in the present invention;
Fig. 4 is the two-dimensional structure schematic diagram of second layer phonon crystal in the present invention;
Fig. 5 is the two-dimensional structure schematic diagram of third layer phonon crystal in the present invention;
Fig. 6 is the two-dimensional structure schematic diagram of the 4th layer of phonon crystal in the present invention;
In accompanying drawing:First layer phonon crystal 1, second layer phonon crystal 2, third layer phonon crystal 3, the 4th layer of phonon crystal
4.First layer phonon crystal 1 comprising scattering object 1-1,1-2 ..., 1-8 and cavity 1-9, second layer phonon crystal 2 includes scattering object
2-1,2-2,2-3,2-4 and cavity 2-5, third layer phonon crystal 3 comprising scattering object 3-1,3-2 ..., 3-8 and cavity 3-9, the
Four layers of phonon crystal 4 comprising scattering object 4-1,4-2 ..., 4-16 and cavity 4-17.
Embodiment
The present invention is further clarified below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, using multi-layer-coupled photonic crystal structure acoustic resonator by first layer phonon crystal 1,
Second layer phonon crystal 2, third layer phonon crystal 3, the 4th layer of nesting of phonon crystal 4 are formed.As shown in Fig. 1 and Fig. 3-6, first
Layer phonon crystal 1 is positioned in the cavity 2-5 of second layer phonon crystal 2, and it is brilliant that second layer phonon crystal 2 is positioned over third layer phonon
In the cavity 3-9 of body 3, third layer phonon crystal 3 is positioned in the cavity 4-17 of the 4th layer of phonon crystal 4.
First layer phonon crystal 1 comprising scattering object 1-1,1-2 ..., 1-8 and cavity 1-9, scattering object 1-1,1-2 ..., 1-8
By 3 × 3 arrays.Second layer phonon crystal 2 includes scattering object 2-1,2-2,2-3,2-4 and cavity 2-5, scattering object 2-1,2-2,2-
3rd, 2-4 presses 2 × 2 arrays.Third layer phonon crystal 3 comprising scattering object 3-1,3-2 ..., 3-8 and cavity 3-9, scattering object 3-1,3-
2nd ..., 3-8 presses 3 × 3 arrays.4th layer of phonon crystal 4 comprising scattering object 4-1,4-2 ..., 4-16 and cavity 4-17, scattering object
4-1,4-2 ..., 4-16 press 5 × 5 arrays.Scattering object 1-1,1-2 ..., 1-8,2-1,2-2,2-3,2-4,3-1,3-2 ..., 3-
8th, 4-1,4-2 ..., 4-16 material be PMMA;Cavity 1-9,2-5,3-9,4-17 material are air.
Another embodiment, the shape of cross section of each phonon crystal scattering object can be triangle, cross template, for substituting
It is circular.
Another embodiment, each phonon crystal diffuser material can use steel, plastics, plank.
Another embodiment, the lattice shape of each phonon crystal can select triangle, rectangle.
Another embodiment, the space dimensionality of phonon crystal can be three-dimensional, make on the phonon crystal of above-mentioned two dimension arrangement
Three-dimensional extended.
Another embodiment, the phonon crystal number of plies can increase to five layers, six layers, even more many, to obtain putting for needs
Big coefficient.
In above-mentioned example, when incident acoustic wave sequentially passes through the 4th layer of phonon crystal 4, third layer phonon crystal 3, second layer sound
When sub- crystal 2, first layer phonon crystal 1, because multiple scattering occurs for Bragg effect, multiple scattering sound wave is formed.When each layer
When coupling intersection occurs for the passband of the band structure of phonon crystal, the multiple scattering ripple produced through each layer phonon crystal scattering process
Generation coupling, finally forms the in-phase stacking of multiple scattering ripple, acoustic pressure is by consumingly in first layer phonon crystal cavity
Amplification, sound wave are limited in herein, so as to form strong acoustic localization effect.Hereby it is achieved that to the efficient of faint sound wave
Detection, sensing and capture.
Claims (7)
1. a kind of acoustic resonator of use multi-layer-coupled phonon crystal, it is characterized in that:By multiple different scattering object sizes and not
Two-dimension phonon crystal nesting with lattice coefficient is formed.
2. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Including four layer two
Phonon crystal is tieed up, from the inside to the outside, first layer phonon crystal is to be made up of center for 3 × 3 scattering volume arrays of single-point vacancy defect,
Second layer phonon crystal is made up of 2 × 2 scattering volume arrays, and it is the 3 of single-point vacancy defect by center that third layer phonon crystal, which is,
× 3 scattering volume arrays are constituted, and the 4th layer of phonon crystal is to be made up of center for 5 × 5 scattering volume arrays of multiple spot vacancy defect.
3. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Phonon crystal
Scattering object uses one kind in sound-hard material PMMA, steel, plastics, plank.
4. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Phonon crystal
Scattering object shape of cross section is circular, triangle or cross template.
5. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Phonon crystal
Lattice shape is square, triangle or rectangle, and substrate is air.
6. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Two-dimension phonon is brilliant
Body is substituted with three-dimensional phonon crystal.
7. the acoustic resonator of use multi-layer-coupled phonon crystal according to claim 1, it is characterized in that:Phonon crystal layer
Number increases to five layers or six layers.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110417371A (en) * | 2019-06-25 | 2019-11-05 | 武汉大学 | Thin film bulk acoustic wave resonator based on phonon crystal |
CN112491379A (en) * | 2020-10-21 | 2021-03-12 | 电子科技大学 | Surface acoustic wave resonator with phononic crystal reflector |
CN113015619A (en) * | 2019-02-28 | 2021-06-22 | 松下知识产权经营株式会社 | Laminate and crystal |
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CN106130403A (en) * | 2016-07-11 | 2016-11-16 | 武汉理工大学 | A kind of composite line defect phonon crystal wide frequency division cloth vibration energy regeneration system |
CN206862489U (en) * | 2017-05-09 | 2018-01-09 | 国网江西省电力公司电力科学研究院 | A kind of acoustic resonator using multi-layer-coupled phonon crystal |
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Patent Citations (3)
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US8094023B1 (en) * | 2008-03-10 | 2012-01-10 | Sandia Corporation | Phononic crystal devices |
CN106130403A (en) * | 2016-07-11 | 2016-11-16 | 武汉理工大学 | A kind of composite line defect phonon crystal wide frequency division cloth vibration energy regeneration system |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113015619A (en) * | 2019-02-28 | 2021-06-22 | 松下知识产权经营株式会社 | Laminate and crystal |
CN110417371A (en) * | 2019-06-25 | 2019-11-05 | 武汉大学 | Thin film bulk acoustic wave resonator based on phonon crystal |
CN110417371B (en) * | 2019-06-25 | 2022-06-14 | 宁波华彰企业管理合伙企业(有限合伙) | Film bulk acoustic resonator based on phononic crystal |
CN112491379A (en) * | 2020-10-21 | 2021-03-12 | 电子科技大学 | Surface acoustic wave resonator with phononic crystal reflector |
CN112491379B (en) * | 2020-10-21 | 2024-03-22 | 电子科技大学 | Surface acoustic wave resonator with phonon crystal reflector |
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