CN107086050A - A kind of pump body structure and electronic installation for many time-program(me) memories - Google Patents
A kind of pump body structure and electronic installation for many time-program(me) memories Download PDFInfo
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- CN107086050A CN107086050A CN201610087267.8A CN201610087267A CN107086050A CN 107086050 A CN107086050 A CN 107086050A CN 201610087267 A CN201610087267 A CN 201610087267A CN 107086050 A CN107086050 A CN 107086050A
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- pump
- clock
- body structure
- pump body
- resistance
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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Abstract
The present invention provides a kind of pump body structure and electronic installation for many time-program(me) memories.The pump body structure includes：Voltage detection unit, is configurable for the multiple different voltages of detection；Pump clock selecting unit, is configurable for the voltage detected based on the voltage detector, using resistance selection come controlling pump output clock frequency；And pump clock generating unit, the pump clock output frequency based on pump clock selecting unit output is configurable for generate pump clock.The pump body structure for many time-program(me) memories of the present invention can generate different pump clocks for very wide voltage range, so as to reduce power consumption.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which one kind is deposited for many time-program(me)s
The pump body structure and electronic installation of reservoir.
Background technology
MTP (multiple-time-programmable) memory is current emerging non-volatile memory
Device.In addition to the programmed and erased to memory cell, it is also to being read correctly for data of memory cell
Whole memory key operation.With the increase of application demand, low supply voltage low-power consumption has become
The design and developing direction of nonvolatile storage.Because the various parasitic capacitances on bit line are not with work
Make the reduction of voltage and the decline of operating current and reduced.
For MTP (many time-program(me)s) memory application for wide-range power, it is necessary to consider pin
To the pump drivability of the power supply of all scopes.For low VCC scopes, it is necessary to meet the pump rule of program
Model and remove some performances, and for high VCC situation, it is necessary to minimize power consumption and Leakage Current.
Accordingly, it is desirable to provide a kind of pump body structure, to solve issue noted above at least in part.
The content of the invention
In view of the shortcomings of the prior art, the pump body structure for many time-program(me) memories of the invention is directed to
Very wide voltage range can generate different pump clocks, so as to reduce power consumption.The present invention is by detecting electricity
Source, and change pump clock to minimize the pump interval for same pump performance according to the power supply detected
(pump gap)。
Embodiments of the invention provide a kind of pump body structure for many time-program(me) memories, the pump housing
Structure includes：Voltage detection unit, is configurable for the multiple different voltages of detection；Pump clock selecting
Unit, is configurable for the voltage detected based on the voltage detector, utilizes resistance selection
Carry out controlling pump output clock frequency；And pump clock generating unit, when being configurable for being based on the pump
The pump clock output frequency of clock selecting unit output generates pump clock.
Exemplarily, the pump clock output frequency and the impedance of the resistance are inversely proportional.
Exemplarily, the pump clock selecting unit includes the first resistor and first switch being connected in parallel,
One end of wherein described first resistor is connected with the source electrode of the first switch, the first resistor it is another
One end is connected with the drain electrode of the first switch.
Exemplarily, the pump clock selecting unit also includes second resistance and the second switch being connected in parallel,
One end of wherein described second resistance is connected with the source electrode of the second switch, the second resistance it is another
One end is connected with the drain electrode of the second switch.
Another embodiment of the present invention provides a kind of method for pump body structure, and methods described includes：Inspection
Survey multiple different temperature；And based on the temperature detected, biased using multiple different references
Carry out controlling pump output biasing.
Another embodiment of the present invention provides a kind of electronic installation, including described is deposited for many time-program(me)s
The pump body structure of reservoir.
The pump body structure for many time-program(me) memories of the present invention is directed to very wide voltage range can be with
The different pump clock of generation, so as to reduce power consumption.
Brief description of the drawings
By the way that the embodiment of the present invention is described in more detail with reference to accompanying drawing, it is of the invention above-mentioned and
Other purposes, feature and advantage will be apparent.Accompanying drawing is used for providing to the embodiment of the present invention
Further understand, and constitute a part for specification, be used to explain this together with the embodiment of the present invention
Invention, is not construed as limiting the invention.In the accompanying drawings, identical reference number typically represents phase
With part or step.
Fig. 1 is the schematic block diagram of usual pump body structure of the prior art；
Fig. 2 is the schematic block diagram of the pump body structure for many time-program(me) memories according to the present invention；
Fig. 3 shows for the pump body structure for many time-program(me) memories according to embodiments of the invention
Meaning property block diagram；
Fig. 4 is the clock selecting block schematic circuit according to embodiments of the invention；
Fig. 5 is the imitative of the pump body structure for many time-program(me) memories according to embodiments of the invention
The schematic diagram of true result；
Fig. 6 is the schematic diagram of the electronic installation according to embodiments of the invention；And
Fig. 7 is the schematic diagram of the another electronic installation according to embodiments of the invention.
Embodiment
Become apparent in order that obtaining the object, technical solutions and advantages of the present invention, below with reference to accompanying drawings in detail
Thin description is according to example embodiment of the invention.Obviously, described embodiment is only the one of the present invention
Section Example, rather than whole embodiments of the invention, it should be appreciated that the present invention is not by described herein
The limitation of example embodiment.Based on the embodiment of the present invention described in the present invention, those skilled in the art exist
All other embodiment obtained by not paying in the case of creative work should all fall into the guarantor of the present invention
Within the scope of shield.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or layer when, its can directly on other elements or layer, it is adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element or layer between two parties.On the contrary, when element is claimed
For " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other members
When part or layer, then in the absence of element or layer between two parties.Although it should be understood that term first, the can be used
2nd, the third various elements of description, part, area, floor and/or part, these elements, part, area,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish element, part,
Area, floor or part and another element, part, area, floor or part.Therefore, the present invention is not being departed from
Under teaching, the first element discussed below, part, area, floor or part be represented by the second element,
Part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ",
" ... on ", " above " etc., it can for convenience describe and be used so as in description figure herein
A shown element or feature and other elements or the relation of feature.It should be understood that except shown in figure
Orientation beyond, spatial relationship term be intended to also including the use of the different orientation with the device in operation.Example
Such as, if device upset in accompanying drawing, then, it is described as " below other elements " or " its it
Under " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, example
Property term " ... below " and " ... under " may include it is upper and lower two orientation.Device can additionally take
Correspondingly explained to (being rotated by 90 ° or other orientations) and spatial description language as used herein.
The purpose of term as used herein is only that description specific embodiment and not as the limit of the present invention
System.Herein in use, " one " of singulative, " one " and " described/should " be also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " comprising ",
When in this specification in use, determining the feature, integer, step, operation, element and/or part
Presence, but be not excluded for one or more other features, integer, step, operation, element, part
And/or the presence or addition of group.Herein in use, term "and/or" includes any of related Listed Items
And all combinations.
In order to thoroughly understand the present invention, detailed step and detailed knot will be proposed in following description
Structure, to explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but
In addition to these detailed descriptions, the present invention can also have other embodiment.
First, pump body structure usual in the prior art is introduced.
Fig. 1 is the schematic block diagram of usual pump body structure of the prior art.
As shown in figure 1, usual pump body structure includes multiple modular pumps, pump clock, and pump control mechanism.
It is biased using the pump of the clock of fixed frequency and generation with 4 phases.In 10% excursion
Source condition, under the conditions of high VCC, by fixed pump clock, very big power consumption is not had.
Pump body structure shown in Fig. 1 utilizes +/- the 10% of power supply, therefore by identical pump clock, can be with
Do not vary widely.But, for a wide range of application, VCC needs to cover from 1.8V to 3.6V
Scope.Under the power bracket, pump drivability may be very different.It means that at least for
Low VCC conditions design pump, and for high VCC situations, pump output is very strong, and can to regulation
Device sets target level to produce burden, therefore the biasing of peak value pump and current drain occurs.This main original
Because being, under low power supply and high source condition, identical pump clock has been used.
The present invention's provides a kind of pump body structure for many time-program(me) memories.The pump body structure is utilized
Voltage detecting and different clocks, available for wide range of power supply, and with low-power consumption.
Below, reference picture 2 come specifically describe the present invention a kind of pump housing for many time-program(me) memories
Structure.
Fig. 2 is the schematic block diagram of the pump body structure for many time-program(me) memories according to the present invention.
As shown in Fig. 2 the pump body structure of the embodiment of the present invention includes：
Voltage detection unit, is configurable for the multiple different voltages of detection；
Pump clock selecting unit, is configurable for the voltage detected based on the voltage detector,
Using resistance selection come controlling pump output clock frequency；And
Pump clock generating unit, is configurable for the pump exported based on the pump clock selecting unit
Output clock frequency generates pump clock.
, can between low VCC2 and high VCC2 for wide pump voltage (1.8V~3.6V) scope
With corresponding different pump drivability and current loss.Voltage detection unit in the present embodiment is realized
For many detections, it means that VCC2 levels can detect different clock frequencies, for example, low VCC2 feelings
Under shape, using faster frequency, and medium VCC2, then using intermediate frequency, and high VCC2 situations
Under, the slower frequency of use.These operations be as detected by VCC2 bias detections, and can be from
Dynamic change frequency.
Voltage detection unit in the present embodiment can be usual voltage detection unit, unlike, institute
What is carried out is the detection of multivoltage level.Detection level in the present embodiment can with the more than three stage, and
And can control more clock frequencies.Final pump output is more stablized than the pump output in conventional method.
VCC detection circuits use usual method, and it generates the signal of many steps.These signals enter
Enter the clock frequency block in pump clock generating unit, wherein generating the clock cycle, and utilize resistance selection.
Corresponding clock resistance option is selected by different detection level signals.Voltage detecting is automatically generated
, and these signals automatically control clock cycle resistance selection.
Exemplarily, the pump clock output frequency and the impedance of the resistance are inversely proportional.For example, higher
Impedance produce slower clock, and lower impedance produces faster clock.
Pump clock generating unit in the present embodiment can be usual clock generating unit.In the present embodiment
Resistance selection mean there are different controlled clock frequencies.Mainly, the VCC2 of wide scope, by not
With voltage detecting and corresponding clock frequency realize different controlled pump output level.
In the present embodiment, by voltage detecting and flexible clock control, there is provided for wide scope
The low power dissipation design of voltage application.For minimum Power Supplies Condition and highest Power Supplies Condition, pump can be optimized
Drivability and power consumption.In addition, in the present embodiment, for different source bias, using different
Clock.Power detection can generate different signals and automatically control pump housing selection.
Embodiment one
Fig. 3 shows for the pump body structure for many time-program(me) memories according to embodiments of the invention
Meaning property block diagram.
As shown in figure 3, the pump body structure for many time-program(me) memories in the present invention includes multiple lists
First pump, pump clock, VCC2 detections, clock selecting, pump bias regulator, and the generation of pump clock.
Compared with usual pump body structure, which are added VCC2 detections and clock selecting, it is used for according to difference
Voltage generates different clock frequencies.That is, for low VCC and high VCC scopes, change different
Pump clock.Power consumption and the lower peak point current of acquisition can be reduced by so doing.Detecting different VCC water
After flat, by aforesaid operations, clock and VCC can be minimized.Unlike this, usual pump housing knot
Structure, for a wide range of application (VCC needs to cover the scope from 1.8V to 3.6V), passes through phase
Same pump clock, pump drivability may be very different.It means that coming at least for low VCC conditions
Pump is designed, and for high VCC situations, pump output is very strong, and target level can be set to adjuster
Burden is produced, therefore the biasing of peak value pump and current drain occurs.
VCC detection circuits use usual method, and it generates many step (VD33, VD30, VD26
Deng) signal.The clock frequency block that these signals enter in pump clock generating unit, wherein generating clock
Cycle, and utilize resistance selection.Corresponding clock resistance is selected by different detection level signals
Option.What voltage detecting was automatically generated, and these signals automatically control clock cycle resistance selection.
Because for low VCC, to high VCC scopes, pump drivability is different, therefore in high VCC
In situation, use slower clock cycle and lower pump drivability, so as to obtain lower power consumption.
In low VCC situations, it is possible to increase clock simultaneously uses higher drivability.The pump drivability of minimum
It is low VCC situations, and high VCC conditions need to consider low-power consumption and lower output peak bias.It is main
Strategic point, the varying level marked off for wide VCC scopes and the unlike signal detected, using not
The same clock cycle.Unlike this, usual pump configuration illustrate only a kind of clock for all power supplys,
Thus for high Power Supplies Condition, pump drivability is excessive.
In the present embodiment, by voltage detecting and flexible clock control, there is provided for wide scope
The low power dissipation design of voltage application.For minimum Power Supplies Condition and highest Power Supplies Condition, pump can be optimized
Drivability and power consumption.In addition, in the present embodiment, for different source bias, using different
Clock.Power detection can generate different signals and automatically control pump housing selection.
The main concept of the present embodiment is to be directed to wide range of power supply application, in order to provide low-power consumption, is made
With the pump housing led come controlling pump, and this control is to detect to realize by VCC.Usual VCC
Detection can generate many VCC levels and the different clock cycle applied.Therefore, high VCC situations
Under, using low frequency, and under low VCC situations, use high-frequency.Therefore, for the total of all scopes
Power consumption is not varied widely.It can reduce the peak point current under the conditions of high VCC.
Embodiments of the invention are under high Power Supplies Condition, with lower loss, and low peak pump is biased, with
And the electric current of activity.Meanwhile, for different Power Supplies Conditions, with the similar pump rate of climb.Power supply
Detection and flexible clock control cause the detection level for having many for wide range of power supply, for institute
The power level detected, produces different pump clocks, and defined and changed by most slow and minimum level
Pump cycle is all the time become.
Fig. 4 is the schematic circuit of the clock selecting block according to embodiments of the invention.
As shown in figure 4, clock selecting block includes the circuit in usual clock generation unit point and the present embodiment
Selected section.Using voltage detection signal (VD26~VD33), according to different signals change frequency and
Pump drivability.By using PMOS, resistance option value causes the different clock cycle.
VCC detection circuits use usual method, and it generates many step (VD33, VD30, VD26
Deng) signal.The clock frequency block that these signals enter in pump clock generating unit, wherein generating clock
Cycle, and utilize resistance selection.Corresponding clock resistance is selected by different detection level signals
Option.What voltage detecting was automatically generated, and these signals automatically control clock cycle resistance selection.
In the present embodiment, main operating point is to enter " PBIAS " (source bias) knee level,
Under the knee level, clock frequency (for example, CLK1 and CLK2 shown in Fig. 4) can be changed.
Certainly, the circuit may also include more resistance and switch, to control more clock frequencies.
VD23, VD26, VD30 and VD36 signal are the voltage detecting output for each source bias
Signal.The default value of these signals is " L ", it means that be not loaded into any resistance R1, R2, R3,
R4.If detecting VD26, VD26 is changed into " L ", and this causes R2 resistance to be added into PBIAS
Pattern, so that cause the increase of PBIAS levels, thus CLK1 and CLK2 are slower than acquiescence.This meaning
Taste, which higher VD detected values, will cause slower clock, and so as to reduce the drivability of pump.
Exemplarily, the pump clock selecting unit includes the first resistor being connected in parallel (such as institute in Fig. 4
Show R1) and first switch, wherein one end of the first resistor is connected with the source electrode of the first switch,
The other end of the first resistor is connected with the drain electrode of the first switch.
Exemplarily, the pump clock selecting unit also includes the second resistance being connected in parallel (in such as Fig. 4
Shown R2) and second switch, wherein one end of the second resistance is connected with the source electrode of the second switch
Connect, the other end of the second resistance is connected with the drain electrode of the second switch.
Exemplarily, the pump clock selecting unit also includes the 3rd resistor being connected in parallel (in such as Fig. 4
Shown R3) and the 3rd switch, wherein one end of the 3rd resistor is connected with the source electrode of the described 3rd switch
Connect, the other end of the 3rd resistor is connected with the drain electrode of the described 3rd switch.
Exemplarily, the pump clock selecting unit also includes the 4th resistance being connected in parallel (in such as Fig. 4
Shown R4) and the 4th switch, wherein one end of the 4th resistance is connected with the source electrode of the described 4th switch
Connect, the other end of the 4th resistance is connected with the drain electrode of the described 4th switch.Herein, voltage detecting
Level can be more than four-stage.That is, the pump clock selecting unit in the present embodiment can include more
Resistance and switch are to tackle broader voltage range.
Embodiments of the invention are under high Power Supplies Condition, with lower loss, and low peak pump is biased, with
And the electric current of activity.Meanwhile, for different Power Supplies Conditions, with the similar pump rate of climb.Power supply
Detection and flexible clock control cause the detection level for having many for wide range of power supply, for institute
The power level detected, produces different pump clocks, and defined and changed by most slow and minimum level
Pump cycle is all the time become.
Fig. 5 is the imitative of the pump body structure for many time-program(me) memories according to embodiments of the invention
The schematic diagram of true result.As shown in figure 5, the pump rate of climb is close to low VCC conditions, therefore in height
Under the conditions of VCC, current loss is smaller than usual situation.During the first pump is biased, setting level is higher than
Peak value and stablize afterwards, because under the conditions of high VCC, pump drivability is very high.Fig. 4 show by
The different clocks cycle (5~20MHz) that VCC detection signals are generated.Also, pump sets the time similar
In situation slower low VCC rather than faster.
Embodiment two
Yet another embodiment of the present invention provides a kind of electronic installation, and the electronic installation includes embodiment one
The described pump body structure for many time-program(me) memories.
Fig. 6 is the schematic diagram of the electronic installation according to embodiments of the invention.Fig. 7 is according to the present invention's
The schematic diagram of the another electronic installation of embodiment.
As shown in Figure 6 to 7, the electronic installation of the present embodiment can be tablet personal computer (in such as Fig. 6
Shown device 600) and mobile phone (device 700 as shown in Figure 7).In addition, the electricity of the present embodiment
Sub-device also includes but is not limited to, notebook computer, net book, game machine, television set, VCD, DVD,
Any electronic product such as navigator, camera, video camera, recording pen, MP3, MP4, PSP is set
It is standby, or any intermediate products including the semiconductor devices.
The electronic installation of the embodiment of the present invention, the above-mentioned pump body structure due to having used, thus equally have
Above-mentioned advantage.
Although describing example embodiment by reference to accompanying drawing here, it should be understood that above-mentioned example embodiment is only
It is exemplary, and is not intended to limit the scope of the invention to this.Those of ordinary skill in the art can
To make various changes and modifications wherein, it is made without departing from the scope of the present invention and spirit.It is all these to change
Become and modification is intended to be included within the scope of the present invention required by appended claims.
Claims (5)
1. a kind of pump body structure for many time-program(me) memories, it is characterised in that the pump housing knot
Structure includes：
Voltage detection unit, is configurable for the multiple different voltages of detection；
Pump clock selecting unit, is configurable for the voltage detected based on the voltage detector,
Using resistance selection come controlling pump output clock frequency；And
Pump clock generating unit, is configurable for the pump exported based on the pump clock selecting unit
Output clock frequency generates pump clock.
2. pump body structure according to claim 1, it is characterised in that the pump clock output frequency
Impedance with the resistance is inversely proportional.
3. pump body structure according to claim 1 or 2, it is characterised in that the pump clock selecting
Unit includes the first resistor and first switch that are connected in parallel, wherein one end of the first resistor with it is described
The source electrode of first switch is connected, and the other end of the first resistor is connected with the drain electrode of the first switch
Connect.
4. pump body structure according to claim 3, it is characterised in that the pump clock selecting unit
Also include the second resistance that is connected in parallel and second switch, wherein one end of the second resistance and described the
The source electrode of two switches is connected, and the other end of the second resistance is connected with the drain electrode of the second switch.
5. it is used for many time-program(me) memories a kind of electronic installation, including described in one of claim 1-4
Pump body structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087267.8A CN107086050A (en) | 2016-02-16 | 2016-02-16 | A kind of pump body structure and electronic installation for many time-program(me) memories |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087267.8A CN107086050A (en) | 2016-02-16 | 2016-02-16 | A kind of pump body structure and electronic installation for many time-program(me) memories |
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| CN107086050A true CN107086050A (en) | 2017-08-22 |
Family
ID=59614716
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| CN201610087267.8A Pending CN107086050A (en) | 2016-02-16 | 2016-02-16 | A kind of pump body structure and electronic installation for many time-program(me) memories |
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| JPS62262118A (en) * | 1986-05-08 | 1987-11-14 | Nec Corp | One chip microcomputer |
| US20100171545A1 (en) * | 2005-09-29 | 2010-07-08 | Kim Jae-Il | High voltage generator and word line driving high voltage generator of memory device |
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Application publication date: 20170822 |
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