CN107076616A - Method and apparatus for measurement temperature - Google Patents
Method and apparatus for measurement temperature Download PDFInfo
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- CN107076616A CN107076616A CN201580057068.6A CN201580057068A CN107076616A CN 107076616 A CN107076616 A CN 107076616A CN 201580057068 A CN201580057068 A CN 201580057068A CN 107076616 A CN107076616 A CN 107076616A
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- 238000005259 measurement Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000012212 insulator Substances 0.000 claims abstract description 24
- 238000007599 discharging Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 8
- 230000033228 biological regulation Effects 0.000 claims description 7
- 238000004590 computer program Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
- G01J2005/345—Arrays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
It is used for the measurement temperature in the case where using the sensor with the metal insulator semiconductor structure connected as electric capacity the present invention relates to a kind of（T1, T2）Method, the metal insulator semiconductor structure then have depending on temperature automatic discharging（112）.Methods described is included in using at the measurement moment（114）It is carried in the current potential on the electric capacity（116,118）The lower temperature for determining to represent the sensor（T1, T2）Temperature information the step of.
Description
Technical field
The present invention relates to a kind of for the method for measurement temperature, a kind of corresponding device and a kind of corresponding computer journey
Sequence.
Background technology
Infrared radiation can be recorded under the sensor using photoelectricity., must in order to reach enough picture quality herein
The sensor must be cooled down.
The content of the invention
In face of this background, it is used to survey according to described in independent claims, a kind of with scheme introduction described here
The method of amount temperature, in addition a kind of device made in this way and a kind of last corresponding computer program.Favourable sets
Meter scheme is produced from corresponding dependent claims and the following description book.
Infrared radiation can be detected, method is：Measure the temperature for the absorbing surface for absorbing the infrared radiation.
During constant eradiation, put down between the energy for flowing to the energy of the absorbing surface, temperature and being flowed out from the absorbing surface
Weighing apparatus.Said energy flows into the infrared radiation that substantially represent incidence and the temperature for determining the absorbing surface.Energy
Outflow depends on the temperature of the absorbing surface and produced basically by heat transfer.
The way of detection infrared radiation is referred to as surveying radiant heat under using the temperature survey for the object radiated
Principle.Sensor using the principle of the survey radiant heat is referred to as bolometer.
Miniature bolometer can be constituted on the basis of metal-insulator semiconductor-electric capacity.Big advantage exists herein
In：It is sensitive in the temperature for improving three orders of magnitude compared with pn- diodes partly used in miniature bolometer
Property while obtain very high miniaturization potentiality.
On the basis of current measurement or impedance can determined by the measurement under two kinds especially high frequency
On the basis of such sensor is tested and assessed.
When carrying out current measurement the electric current very little and in voltage constant due to the secondary power of electric current and temperature
Relation and test and appraisal circuit in need multiple ten one group of current measuring range.It is determined that, it is necessary to measure twice during impedance.This
Outside, series resistance is ignored in this case.This is for its length is several millimeters of feed line under not big error
It is difficult to put up with.
Current scheme illustrates a kind of test and appraisal principle for being used on the basis of the principle of radiant heat is surveyed carry out temperature survey,
For it is described survey radiant heat principle for used as temperature sensitive component metal-insulator semiconductor-tunnel-
Capacitor.Switch matrix can be abandoned in the case of multiple such capacitors, the switch matrix is passing through current measurement
It is necessary when being tested and assessed.
Introduce a kind of for using the sensor with the metal-insulator semiconductor structure connected as electric capacity
The method of lower measurement temperature, the metal-insulator semiconductor structure has the automatic discharging depending on temperature, wherein described
Method has steps of：
The information that represent the temperature of the sensor is determined under the current potential that the measurement moment is carried on the electric capacity using.
Sensor can be referred to as sensor pixel（Sensorpixel）And can regularly it be arranged by largely
The part of sensor matrices that sensor pixel is constituted, image-type.Metal-insulator semiconductor structure can include
At least one metal level, at least one semiconductor layer and at least one be arranged between the metal level and the semiconductor layer
Insulating barrier or separation layer.The insulating barrier separates the metal level with the semiconductor layer.With the rising of temperature, pass through
The separation layer produces the tunnel current risen.If loading current potential between the metal level and the semiconductor layer and inciting somebody to action
The metal-insulator semiconductor structure is used as capacitor, then by the capacitor and the voltage difference that is loaded separately after
The tunnel current causes the decline of the current potential.Hotter, the tunnel current is bigger.Because knowing the relation,
The decline of the current potential represents the temperature caused.
Methods described can have it is described measurement the moment before carry out charging the step of, the step of the charging in
The electric capacity is charged to take-off potential.The current potential can be detected at the measurement moment on the electric capacity.By institute
The take-off potential of definition, can define the datum quantity for the voltage drop（Referenz）.
Methods described can have the separated step carried out before the measurement moment, in the separated step
The electric capacity is at least connected at the separated moment in side without current potential.Can between moment and the measurement moment in described separate
The duration is measured to wait one.It can separately start the voltage drop by described.The measurement duration can be with having
Temperature to be measured matches.
Furthermore, it is possible to use processing regulation（Verarbeitungsvorschrift）It is lower to determine the temperature information.Place
Manage function（Verarbeitungsfunktion）The pass between temperature and the current potential described in the measurement moment can be depicted in
System.The processing regulation can be such as stored in numerical tabular.The temperature can be rapidly tried to achieve by handling regulation.
The processing regulation can be described by voltage drop caused by the automatic discharging depending on temperature.The processing regulation
It can be preserved in the form of formula.It is possible thereby to realize high precision.
Methods described can have follows it is described measurement the moment after electric discharge the step of, the step of the electric discharge in
The electric capacity is discharged into equilibrium potential.This equilibrium potential is produced in the following manner：The institute under this balanced voltage
Stating tunnel current can not be maintained again.
The step of methods described can have another determination, the step of another described determination in using following
At the time of another current potential for being carried on the electric capacity under determine another temperature information.Each other successively accompanied by multiple
The step of determining, can detect temperature changing process.
In addition, scheme described here provides a kind of apparatus for measuring temperature, the device is configured to
The step of implementing, manipulate or realize a kind of flexible program of method described here in corresponding mechanism.Pass through the present invention
, it is this in the form of device realize implementation flexible program, the present invention based on task can also soon and effectively be solved
Certainly.
Device can refer to a kind of electric instrument herein, the electric instrument processing sensor signal and accordingly output control
Signal and/or data-signal.Described device can have interface, and the interface can be according to hardware mode and/or software mode
To constitute.In the embodiment according to hardware mode, the interface such as can be so-called system-ASIC including institute
State a part for the extremely different function of device.But it is also possible that the interface has the integrated switch electricity of itself
Road is made up of discrete component at least in part.In the embodiment according to software mode, the interface can be with
It is software module, the software module is existed on microcontroller in addition to other modules.
Described device can mutually be coupled with the sensor or including the sensor.
Also advantageously a kind of computer program product or computer program with program code, described program code
Machine readable carrier or storage medium, such as semiconductor memory, harddisk memory or optical storage can be stored in
It is used to implement, realize simultaneously on device and especially when described program product or program are performed on computer or device
And/or the step of method of person's manipulation as described in one of embodiment described above.
Brief description of the drawings
Scheme described here is exemplarily explained in detail below by way of accompanying drawing.Accompanying drawing is shown：
Fig. 1 is the diagram for the curve for being used for the current potential measured to temperature according to a kind of embodiment of the present invention；
Fig. 2 is a kind of embodiment according to the present invention for the flow chart of the method measured to temperature；
Fig. 3 is a kind of embodiment according to the present invention for the block diagram of the device measured to temperature；And
Fig. 4 is a kind of embodiment according to the present invention for the diagram of the switching frequency measured to temperature.
Below in the advantageous embodiment description of the present invention, being in shown in a different accompanying drawings and class
Identical or similar reference are used like the element of effect, wherein abandoning the repetitive description for these elements.
Embodiment
Fig. 1 is shown to be used for temperature T1 according to a kind of embodiment of the present invention, the voltage for the current potential 104 that T2 is measured
The diagram of curve 100,102.The voltage curve 100,102 show in the graph come, the chart on its abscissa
Show the time and show voltage on its ordinate.
100,102 pairs of the voltage curve is used for metal-insulator-half of measurement temperature according to scheme described here
Conductor structure（MIS）Use for represent feature.Here, the metal-insulator semiconductor structure connects as electric capacity
Connect.In order to measure, first by voltage VDDOn the feed line for being loaded into the metal-insulator semiconductor structure.Thus will
The capacitor being made up of metal-insulator semiconductor structure is charged to defined take-off potential in the charging stage 106
108。
At the separated moment 110, by the feed line of the capacitor and the voltage VDDSeparate.In the another of the capacitor
Earthing potential GND is loaded on individual contact.Now due to the metal-insulator in the metal-insulator semiconductor structure
Tunnel current in body-semiconductor structure and start voltage drop 112.The tunnel current depends on temperature.Thus the voltage
Drop 112 is similarly dependent on temperature.Voltage 104 on the capacitor in different time interval scopes with being not dependent on temperature
Go straight down to by designing the minimum value V determined0.The voltage drop 112 extraly depends on the water of the take-off potential 108
It is flat.
By the temperature dependence, the metal-insulator semiconductor structure is by its temperature at the measurement moment 114
With different current potentials 116,118.In described separate predetermined survey is waited between moment 110 and the measurement moment 114
Measure the duration 120.
In the scheme introduced herein, measured at the measurement moment 114 in the metal-insulator semiconductor structure
Different current potentials 116,118.Since it is known the voltage drop 112, the measurement duration 120 and the temperature-independent are closed
System, it is possible to the temperature of the metal-insulator semiconductor structure is inferred to from the current potential 116,118.
In one embodiment, it is described measurement the moment 114 after reset the moment 122 at make the metal-insulator-
Voltage 104 on semiconductor structure resets.In other words, the capacitor being made up of the metal-insulator semiconductor structure is made
Short circuit.Thus equilibrium potential 124 is loaded on the joint of the capacitor（=0V）.
The measuring principle introduced based on MIS electric capacity, due to automatic discharging caused by the tunnel current depending on temperature
112.The MIS electric capacity is charged to known current potential V in advanceDD108.The tunnel current for depending strongly on temperature is being incited somebody to action
The electric capacity and supply voltage cause automatic discharging 112 after separating 110.The remaining voltage after the regular hour 120
116,118 are used as measurement signal, and the temperature T1, T2 are extracted from the measurement signal.The voltage measurement passes through following
Mode becomes easy：Measurement range is highly precisely aware of in the preparatory stage.Maximum confirmable voltage passes through VDD
To determine, minimum voltage V0Produced from a kind of voltage, at this voltage the tunnel current collapse.Figure 1 illustrates
Exemplary signal curve 100,102.
In other words, Fig. 1 show voltage curve 100,102 together with charging 106, it is integrated（Integrieren）112 or
Say 122 these steps of the electric discharge 112 carried out by the tunnel current and optional reset.Here it is shown that with charging rank
The time/voltage chart of section 106, integration phase 112 and optional reseting stage 122.Will be described in the charging stage 106
Electric capacity is charged to predetermined current potential VDD108.In the integration phase 112, the voltage 104 of the electric capacity is depending on temperature
From the current potential V under degreeDD108 drop to reference potential V0.Decline as the said index of voltage 104.The decline 112
Time constant depends on temperature.The temperature T1, T2Bigger, the current potential 104 is with regard to declining faster.In the integration phase 112
The middle input predetermined measurement moment 114.At the measurement moment 114, the electric capacity is in different temperature T1And T2When have
Different current potentials 116,118.Make the capacitance short-circuit in the reseting stage 122 and the current potential 104 rapidly declines
To zero.
In order to improve sensitiveness, the current potential V can be improvedDD.But, this is by the metal-insulator-halfbody body knot
The limitation of the breakdown voltage of the insulator layer of structure.The voltage in the range of 5V is enough in principle.
Fig. 2 shows the flow chart for the method 200 for being used for measurement temperature according to a kind of embodiment of the present invention.Methods described
200 can use with as electric capacity come metal-insulator connecting, with the automatic discharging depending on temperature-partly lead
The sensor of body structure gets off implementation.Methods described 200 have determine step 202, the step of the determination in using
Determination represents the temperature information of the temperature of the sensor under the current potential that the measurement moment is carried on the electric capacity.
The step 204 of the charging before the measurement moment is performed in one embodiment, the step of the charging
It is middle that the electric capacity is charged to take-off potential.The current potential is detected on the electric capacity at the measurement moment.
In another embodiment, the separated step 206 before the measurement moment is performed, in the separated step
The electric capacity is at least connected in side without current potential at the separated moment in rapid.Here, separating moment and the measurement described
Waiting one measures the duration between moment.
In one embodiment, there is methods described 200 one to follow the step of the electric discharge after the measurement moment
208.In the step 208 of the electric discharge, the electric capacity is discharged into equilibrium potential.
The step of methods described 200, can repeat, for using followed by the time of at be carried in the electric capacity
Another current potential under obtain at least another temperature information.
Fig. 3 shows a kind of block diagram of embodiment apparatus for measuring temperature 300 according to the present invention.Described device
300 are configured to manipulate sensors for measuring temperature 302.In described device 300, it can perform as such as in Fig. 2
Shown in as method.
The sensor 302 such as has nine respectively by a metal-insulator semiconductor structure come structure herein
Into electric capacity 304, the electric capacity with three rows and three matrixes arranged to arrange.Each row passes through row conductor Z1, Z2, Z3 phases
Connection.Each row are connected by column wire S1, S2, S3.
The row conductor Z1, Z2, Z3 are correspondingly connected in the way of it can change with ground wire.Here, in this reality
Apply in example, n- channels-Metal-oxide-semicondutor-field-effect transistor 306 is used as switch.The column wire S1, S2, S3 phases
Should ground again by n- channels-Metal-oxide-semicondutor-field-effect transistor 306 in the way of it can change and ground connection
Line is connected or p- channels-Metal-oxide-semicondutor-field-effect transistor 308 with by way of can changing and electric
Position VDD is connected.N- channels-Metal-oxide-semicondutor-the field-effect transistor 306 can be referred to as NMOS TG or
Person says NMOS transmission gates.P- channels-Metal-oxide-semicondutor-the field-effect transistor 308 can be referred to as PMOS TG
PMOS transmission gates in other words.N- channels-Metal-oxide-semicondutor-the field-effect transistor 306 and p- channels-gold
Category-Oxidc-Semiconductor-field-effect transistor 308 is configured to corresponding current potential being coupled on the matrix.The row
Wire S1, S2, S3 are extraly correspondingly connected with the operational amplifier 310 of high impedance.The operational amplifier 310 is used for
Carry out voltage measurement.In the output end of the operational amplifier 310, respectively it is used for the mechanism 312 determined by one to intercept
State the current potential of one of the electric capacity 304 that arranges accordingly.The mechanism 312 for being used to determine is configured to using in the measurement
Moment is carried in temperature information 314 under the current potential on the electric capacity 304.Here, the temperature information 314 represent it is described
The temperature of one of the electric capacity 304 of sensor 302.
The device 300 for being used to measure is logically divided into the portion for the part 316 of operation and for test and appraisal
Divide 318.Here, the part 318 for being used to test and assess includes the n- channels-Metal-oxide-semicondutor-field effect transistor
Pipe 306 and p- channels-Metal-oxide-semicondutor-field-effect transistor 308.The operational amplifier 310 is formed in
Interface between the part 316 for being used to run and the part 318 for being used to test and assess.
It is described in detail by means of the Part portions from miniature bolometer array 302.S1 to S3 represents
The column wire, Z1 to Z3 represents the row conductor.
The ASIC 100 can be advantageous to manufacture with almost every kind of ASIC process costs.
Figure 3 illustrates the row conductor Z1, Z2, the engagement on Z3 and column wire S1, S2, S3 Line technology
（Abschluss）.
It only exemplarily have selected the number of shown electric capacity 304.According to described scheme, the sensor
302 have at least one electric capacity 304.The sensor 302 can also come as a part for the device 300 for being used to measure
Understand.
Fig. 4 shows the diagram for the switching frequency 400 for being used for measurement temperature according to a kind of embodiment of the present invention.It is described to open
Close frequency 400 can be as than implementing on the device for being used to measure as illustrated in Figure 3.The switching frequency
400 show as temporal process.Shown at this in the row of the switching frequency 400 for the every of the sensor
Individual column wire S1, S2, S3 and each row conductor Z1 for the sensor, Z2, Z3 manipulation.
Be shown in which, how the sensor to be charged to line by line in the charging stage 106 defined in
Then start on current potential VDD and line by line the voltage drop 112.After the temperature survey is terminated, make all row
Wire S1, S2, S3 and row conductor Z1, Z2, Z3 reset 122.
In other words, a kind of basis in the automatic discharging that electric capacity is carried out by the tunnel current depending on temperature is shown
The principle of the upper temperature survey for carrying out position resolution.
Test and appraisal principle 400 is constituted by the step 106 charged, the step 112 of automatic discharging and the step of reading.In step
All electric capacity are charged to V in 106DDThat is, all column wires are placed in VDDAbove and by all row conductors it is applied to ground electricity
Line（0V）On.In the step 112 of the automatic discharging, start the automatic discharging, method is：Floating ground（floatend）If
Put or separate the feed line.The voltage is read in the step of the reading line by line.Therefore, the row are led
On the amplifier for being connected to the progress voltage measurement line high impedance.The row conductor is successively applied on ground wire.
Alternatively resetted, all current potentials are applied on 0V when resetting.
In order to which the time of measuring is kept into constant in all pixels, can also time delay it implement each stage.
The time of measuring corresponds to the time used in being discharged for use by the tunnel current.The timing diagram of this point in Fig. 4
Shown in table.Here, showing the current potential on the row conductor or column wire in each beat.F describes floating herein
The current potential and f of high impedancemDescribe the current potential of the floating measured by operational amplifier.Therefore, as connected in figure 3
The end of the row conductor and column wire.
It only exemplarily have selected embodiment described and being shown in the drawings.Different embodiments can be with complete
It is combined with each other entirely or on each feature.A kind of embodiment can also be supplemented by the feature of another embodiment.
In addition, method described here step can be repeated and to be performed with described order different.
, can be to this such as if the "and/or" that a kind of embodiment is included between fisrt feature and second feature is coupled
Understood in this place：So that the embodiment not only has the fisrt feature but also with described the in one embodiment
Two features, and only either there is fisrt feature in other embodiments or only there is the second feature.
Claims (11)
1. for using with as electric capacity（304）Come the sensor of metal-insulator semiconductor structure connected（302）
Lower measurement temperature（T1, T2）Method（200）, the metal-insulator semiconductor structure has puts depending on the automatic of temperature
Electricity（112）, wherein methods described（200）Have steps of：
Using at the measurement moment（114）It is carried in the electric capacity（304）On current potential（116,118）It is lower to determine（202）Represent
The sensor（302）Temperature（T1, T2）Temperature information（314）.
2. the method as described in claim 1（200）, with the measurement moment（114）The charging carried out before（106）'s
Step（204）, the step of the charging in by the electric capacity（304）It is charged to take-off potential（108）, wherein in the measurement
Moment（114）In the electric capacity（304）Upper detection current potential（116,118）.
3. the method as any one of preceding claims（200）, with the measurement moment（114）Carry out before
Separated step（206）, at the separated moment in the separated step（110）By the electric capacity（304）At least side without
Connect, wherein separating the moment described current potential（110）With the measurement moment（114）Between waiting one measure the duration
（120）.
4. the method as any one of preceding claims（200）, wherein the step of the determination（202）In exist in addition
The temperature information is determined using processing regulation is lower（314）, wherein processing function is depicted in the measurement moment（114）Described
Temperature（T1, T2）With the current potential（104）Between relation.
5. the method as described in claim 4（200）, wherein the step of the determination（202）Described in processing regulation describe
By with temperature（T1, T2）Voltage drop caused by related automatic discharging（112）.
6. the method as any one of preceding claims（200）, with following at the measurement moment（114）Afterwards
Electric discharge（122）The step of（208）, the step of the electric discharge in the electric capacity is discharged into equilibrium potential（124）.
7. the method as any one of preceding claims（200）, the step of with another determination（202）, described
In the step of another determination at the time of using following（114）It is carried in the electric capacity（304）On another current potential
（116,118）Lower another temperature information of determination（314）.
8. for using with as electric capacity（304）Come the sensor of metal-insulator semiconductor structure connected（302）
Lower measurement temperature（T1, T2）Device（300）, the wherein device（300）With following characteristics：
For using at the measurement moment（114）It is carried in the electric capacity（304）On current potential（116,118）Lower determination represents
The sensor（302）Temperature（T1, T2）Temperature information（314）Mechanism（318）.
9. the device as described in claim 8（300）, the device has including described in addition is used as electric capacity（304）Come what is connected
The sensor of metal-insulator semiconductor structure（302）.
10. computer program, the computer program is configured for, implement the method as any one of preceding claims
All steps.
11. machine readable storage medium, it has the computer program as described in claim 10 being stored thereon.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014221270.7 | 2014-10-21 | ||
| DE102014221270.7A DE102014221270A1 (en) | 2014-10-21 | 2014-10-21 | Method and device for measuring a temperature |
| PCT/EP2015/069630 WO2016062434A1 (en) | 2014-10-21 | 2015-08-27 | Method and device for measuring a temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107076616A true CN107076616A (en) | 2017-08-18 |
Family
ID=54056181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580057068.6A Pending CN107076616A (en) | 2014-10-21 | 2015-08-27 | Method and apparatus for measurement temperature |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3209984A1 (en) |
| CN (1) | CN107076616A (en) |
| DE (1) | DE102014221270A1 (en) |
| WO (1) | WO2016062434A1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030082842A1 (en) * | 2001-10-31 | 2003-05-01 | National Taiwan University | On-chip temperature sensor formed of MOS tunneling diode |
| CN1898538A (en) * | 2004-10-18 | 2007-01-17 | 松下电器产业株式会社 | Infrared sensor and infrared sensor array |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5736744B2 (en) * | 2010-01-26 | 2015-06-17 | セイコーエプソン株式会社 | Thermal sensor device and electronic equipment |
-
2014
- 2014-10-21 DE DE102014221270.7A patent/DE102014221270A1/en not_active Withdrawn
-
2015
- 2015-08-27 CN CN201580057068.6A patent/CN107076616A/en active Pending
- 2015-08-27 WO PCT/EP2015/069630 patent/WO2016062434A1/en active Application Filing
- 2015-08-27 EP EP15757472.4A patent/EP3209984A1/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030082842A1 (en) * | 2001-10-31 | 2003-05-01 | National Taiwan University | On-chip temperature sensor formed of MOS tunneling diode |
| CN1898538A (en) * | 2004-10-18 | 2007-01-17 | 松下电器产业株式会社 | Infrared sensor and infrared sensor array |
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| Publication number | Publication date |
|---|---|
| EP3209984A1 (en) | 2017-08-30 |
| WO2016062434A1 (en) | 2016-04-28 |
| DE102014221270A1 (en) | 2016-04-21 |
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Application publication date: 20170818 |