CN107068823A - The InGaAs quantum dots of growth on gaas substrates and preparation method thereof - Google Patents
The InGaAs quantum dots of growth on gaas substrates and preparation method thereof Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 102
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 60
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000011435 rock Substances 0.000 claims abstract description 40
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052785 arsenic Inorganic materials 0.000 claims description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 238000007872 degassing Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005424 photoluminescence Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 38
- 238000004020 luminiscence type Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 229960002415 trichloroethylene Drugs 0.000 description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses the InGaAs quantum dots of growth on gaas substrates, include GaAs (115) A substrates, InGaAs quantum dot layers, GaAs cap rocks, In nanostructured layers and graphene coating successively from the bottom to top.The invention also discloses the preparation method of the InGaAs quantum dots of above-mentioned growth on gaas substrates.The InGaAs quantum dots of growth prepared by the present invention on gaas substrates, greatly improve the photoluminescence intensity of InGaAs quantum dots, and preparation method is simple, cost is relatively low, is a kind of effective ways for the high density InGaAs quantum dots for preparing strong photoluminescence intensity.
Description
Technical field
The present invention relates to quantum dot and preparation method thereof, more particularly to grow InGaAs quantum dots on gaas substrates and
Its preparation method.
Background technology
With the development for preparing high-quality self-organized quantum dot technology, semiconductor-quantum-point is in quantum optices, monochromatic light sub-light
Source, the application study in terms of quantum communications is increasingly aroused people's interest.Quantum dot is a kind of zero dimension material, and it has class
Like the discrete energy levels of atom, while realizing the limitation to carrier on three-dimensional, cause carrier energy in three dimensions
Quantization on degree and there is discrete energy levels, show the shell structurre level characteristic of some similar atoms.Quantum dot it is a variety of new
Singularity matter makes it be had broad application prospects in many fields, such as quantum dot single-photon light source, is tied quantum dot Intermediate Gray more
Solar cell etc..One stabilization, the single-photon source of high brightness, as a kind of new type light source, are inherently spectroscopy and quantum information
Many applications are brought in field, such as：Tandom number generator, weak absorption measurement, linear optics calculating, quantum-key distribution and amount
Son storage etc..But, the quantum dot grown at present is due to the heterogeneity (multimode of defect in quantum dot, and quantum dot size
Effect) etc. factor influence, its luminous intensity is generally relatively low, limits further applying for quantum dot.Therefore research how
High density InGaAs quantum dots with high luminous intensity are prepared using self-organizing method, its optical property will be improved for future
The extensive use of quantum dot in the devices has highly important directive significance.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, GaAs linings are grown in it is an object of the invention to provide one kind
InGaAs quantum dots on bottom, photoluminescence intensity is high.
Another object of the present invention is to provide the preparation method of the InGaAs quantum dots of above-mentioned growth on gaas substrates.
The purpose of the present invention is achieved through the following technical solutions：
The InGaAs quantum dots of growth on gaas substrates, include GaAs (115) A substrates, InGaAs successively from the bottom to top
Quantum dot layer, GaAs cap rocks, In nanostructured layers and graphene coating.
The density of InGaAs quantum dots is 2 × 10 in the InGaAs quantum dot layers10-8×1010cm-2；InGaAs quantum
The average height of point is 5-10 nanometers, and average diameter is 10-25 nanometers.
The thickness of the GaAs cap rocks is 4-10 nanometers.
The average diameter of In nanostructureds is 20-80 nanometers in the In nanostructured layers.
The thickness of the graphene coating is 0.4-2.5 nanometers, including 1-5 layer graphenes.
The preparation method of the InGaAs quantum dots of growth on gaas substrates, comprises the following steps：
(1) GaAs (115) A substrates are cleaned；
(2) degasification is carried out to GaAs (115) A substrates and deoxidation is pre-processed；
(3) in GaAs (115) A Grown InGaAs quantum dot layers；
(4) GaAs cap rocks are covered on InGaAs quantum dot layers；
(5) In nanostructured layers are deposited on GaAs cap rocks surface；
(6) a layer graphene cap rock is covered in In nanostructureds layer surface.
Step (3) GaAs (115) A Grown InGaAs quantum dot layers, be specially：
Using molecular beam epitaxial growth InGaAs quantum dots, indium source temperature is 700-810 DEG C, gallium source temperature in growth course
For 800-1000 DEG C, arsenic source temperature is 270-300 DEG C, and underlayer temperature is 450-550 DEG C, and growth time is 8-20s.
Step (4) is described to cover GaAs cap rocks on InGaAs quantum dot layers, is specially：
On InGaAs quantum dot layers, using molecular beam epitaxial growth GaAs cap rocks, the gallium source temperature in growth course is
800-950 DEG C, arsenic source temperature is 250-350 DEG C, and underlayer temperature is 350-500 DEG C, and growth time is 200-350s.
Step (5) is described to deposit In nanostructured layers on GaAs cap rocks surface, is specially：
The work(of electron beam in In nanostructured layers, growth course is deposited on GaAs cap rocks surface using electron-beam evaporation mode
Rate is 65-90W, and underlayer temperature is 400-600 DEG C, and growth time is 200-350s.
Step (6) is described to cover a layer graphene cap rock in In nanostructureds layer surface, is specially：
Graphene film is prepared on copper foil using chemical vapor deposition：Using methane as precursor in growth course,
Growth atmosphere is the mixed gas of hydrogen and argon gas, and mixed proportion is 1:1, the growth temperature in growth course is 900~1050
DEG C, growth time is 5~30 minutes.Afterwards in graphene film surface spin coating PMMA, using FeCl3Solution corrosion falls copper foil,
The surface that graphene film is transferred to In nanostructureds is shifted using wet method, stone is got rid of using acetone and ethanol alternating cleaning
The PMMA of black alkene film surface.
Compared with prior art, the present invention has advantages below and beneficial effect：
(1) present invention using MBE methods on GaAs (115) A substrates by growing InGaAs quantum dots, and is covering GaAs
In nanostructureds are grown after cap rock, graphene is transferred to the surface of In nanostructureds afterwards, because In local surfaces etc. are from sharp
Member and the effect of intercoupling of InGaAs quantum dot excitonic luminescences, the luminescence generated by light that can significantly improve InGaAs quantum dots are strong
Degree；Simultaneously as there is the very strong effect of intercoupling between In nanostructureds and graphene, in the covering of In nanostructured surfaces
After graphene, there is also the effect of intercoupling between graphene and InGaAs quantum dots, while graphene can significantly improve In
Local electric field intensity around nanostructured.This strong local electric field can significantly improve electronics-sky in InGaAs quantum dots
The radiative recombination rate in cave pair, therefore the InGaAs quantum dot light photoluminescence luminous intensities that prepare of the present invention are significantly carried
It is high.
(2) preparation method of the invention is easy and effective, and cost is relatively low, and enhancing effect is obvious.
Brief description of the drawings
Fig. 1 is the structural representation of the InGaAs quantum dots of the growth of embodiments of the invention 1 on gaas substrates.
Fig. 2 is the flow of the preparation method of the InGaAs quantum dots of the growth of embodiments of the invention 1 on gaas substrates
Figure.
Fig. 3 shines for the AFM for growing InGaAs quantum dots on gaas substrates of embodiments of the invention 1
Piece.
Fig. 4 is the scanning electron microscope diagram after the In nanostructureds covering graphene of embodiments of the invention 1.
Fig. 5 is covering In nanostructureds for the InGaAs quantum dots grown on gaas substrates of embodiments of the invention 1
Photoluminescence front and rear and after In nanostructured surfaces cover graphene.
Embodiment
With reference to embodiment, the present invention is described in further detail, but the implementation of the present invention is not limited to this.
As shown in figure 1, the InGaAs quantum dots of the growth of the present embodiment on gaas substrates, include successively from the bottom to top
GaAs substrates 1, InGaAs quantum dot layers 2, GaAs cap rocks 3, In nanostructured layers 4 and graphene cap rock 5.
As shown in Fig. 2 the preparation method of the InGaAs quantum dots of the growth of the present embodiment on gaas substrates, including it is following
Step：
(1) GaAs (115) A substrates are cleaned：
GaAs (115) A substrates are cleaned 10 minutes in trichloro ethylene, acetone, EtOH Sonicate successively, remove surface organic matter,
Dried up after being finally cleaned by ultrasonic 15 minutes in deionized water with nitrogen；
(2) GaAs (115) A substrates carry out degasification and deoxidation pretreatment：Send into the pre- degasification of molecular beam epitaxy system Sample Room
Half an hour, growth room is sent into after completing degasification, under the protection of arsenic line, high annealing removes the oxidation film layer of substrate surface, its
The temperature in arsenic source is 270 DEG C in middle deoxidation process, and underlayer temperature is 600 DEG C, and the time is 10 minutes；
(3) GaAs (115) A Grown InGaAs quantum dot layers：Using molecular beam epitaxial growth InGaAs quantum dots,
Gallium source temperature is 950 DEG C in growth course, and indium source temperature is 800 DEG C, and arsenic source temperature is 300 DEG C, and underlayer temperature is 510 DEG C, raw
It is 12s for a long time；
As shown in figure 3, the density of InGaAs quantum dots is 2.5 × 10 in the InGaAs quantum dot layers of the present embodiment10cm-2,
The average height of quantum dot is 9 nanometers, and average diameter is 15 nanometers；
(4) GaAs cap rocks are covered on InGaAs quantum dot layers：Using molecular beam epitaxial growth GaAs cap rocks, growth course
In gallium source temperature be 880 DEG C, arsenic source temperature be 290 DEG C, underlayer temperature be 450 DEG C, growth time is 300s；GaAs cap rocks
Thickness is 8 nanometers；
(5) In nanostructured layers are deposited on GaAs cap rocks surface：Grown using electron-beam evaporation mode, it is electric in growth course
The power of beamlet is 80W, and underlayer temperature is 460 DEG C, and growth time is 250s；The average diameter of the In nanostructureds is received for 35
Rice, as shown in Figure 4.
(6) In nanostructureds layer surface covering graphene cap rock：Graphene is grown using chemical vapour deposition technique, is grown
Using methane as precursor in journey, growth atmosphere is the mixed gas of hydrogen and argon gas, and mixed proportion is 1:1, growth course
In growth temperature be 1000 DEG C, growth time be 20 minutes.In graphene film surface spin coating PMMA, using FeCl3Solution
Copper foil is eroded, the surface that graphene film is transferred to In nanostructureds is then shifted using wet method, using acetone and ethanol
Alternately the PMMA on graphene film surface is got rid of in cleaning.
Fig. 5 is the photoluminescence spectrum of the high density InGaAs quantum dots before and after covering In nanostructureds, and spectrum is in room temperature bar
Tested under part, it can be seen that to the InGaAs quantum dots of direct growth on GaAs (115) A substrates, in photoluminescence spectrum
With substrate it is luminous based on, it is very faint corresponding to the luminescence generated by light of InGaAs quantum dots.And work as and covered in InGaAs quantum dot surfaces
Cover after In nanostructureds, the excitonic luminescence intensity of InGaAs quantum dots is significantly improved, the relative covering In nanostructureds of luminous intensity
It is preceding to improve 100 times.And after graphene is covered in In nanostructured surfaces, the photoluminescence intensity of InGaAs quantum dots is further
Enhancing.
In nanostructureds are grown after InGaAs quantum dot surfaces covering GaAs cap rocks, due to In local surface phasmons
With the effect of intercoupling of quantum dot excitonic luminescence, the photoluminescence intensity of InGaAs quantum dots can be significantly improved.When
After GaAs cap rock superficial growth In nanostructureds, the excitonic luminescences of InGaAs quantum dots with fast transfer and can excite metal In innings
Field surface phasmon, and after In local surface phasmons are excited, strong local electricity can be formed around In nano particles
, single-layer graphene is covered in In nano grain surfaces afterwards, the thickness of graphene is 0.5 nanometer.In In nanostructured surfaces
Cover after graphene, there is very strong intercoupling effect between one side In nanostructureds and graphene, at the same graphene and
There is also the effect of intercoupling between InGaAs quantum dots, this effect of intercoupling can further improve In nanostructureds week
The local electric field intensity enclosed.This strong local electric field can significantly improve the radiation of electron-hole pair in InGaAs quantum dots
Recombination rate, therefore the InGaAs quantum dot light photoluminescence luminous intensities that prepare of the present invention are significantly improved.
Embodiment 2
The preparation method of the InGaAs quantum dots of the growth of the present embodiment on gaas substrates, comprises the following steps：
(1) GaAs (115) A substrates are cleaned：
GaAs (115) A substrates are cleaned 10 minutes in trichloro ethylene, acetone, EtOH Sonicate successively, remove surface organic matter,
Dried up after being finally cleaned by ultrasonic 15 minutes in deionized water with nitrogen；
(2) GaAs (115) A substrates carry out degasification and deoxidation pretreatment：Send into the pre- degasification of molecular beam epitaxy system Sample Room
Half an hour, growth room is sent into after completing degasification, under the protection of arsenic line, high annealing removes the oxidation film layer of substrate surface, its
The temperature in arsenic source is 285 DEG C in middle deoxidation process, and underlayer temperature is 600 DEG C, and the time is 10 minutes；
(3) GaAs (115) A Grown InGaAs quantum dot layers：Using molecular beam epitaxial growth InGaAs quantum dots,
Gallium source temperature is 950 DEG C in growth course, and indium source temperature is 800 DEG C, and arsenic source temperature is 300 DEG C, and underlayer temperature is 510 DEG C, raw
It is 15s for a long time；
The density of InGaAs quantum dots is 3 × 10 in the InGaAs quantum dot layers of the present embodiment10cm-2, quantum dot is averaged
It highly it is 5 nanometers, average diameter is 10 nanometers；
(4) GaAs cap rocks are covered on InGaAs quantum dot layers：Using molecular beam epitaxial growth GaAs cap rocks, growth course
In gallium source temperature be 880 DEG C, arsenic source temperature be 290 DEG C, underlayer temperature be 450 DEG C, growth time is 300s；GaAs cap rocks
Thickness is 8 nanometers；
(5) In nanostructured layers are deposited on GaAs cap rocks surface：Grown using electron-beam evaporation mode, it is electric in growth course
The power of beamlet is 80W, and underlayer temperature is 460 DEG C, and growth time is 250s；The average diameter of the In nanostructureds is received for 35
Rice.
(6) In nanostructureds layer surface covering graphene cap rock：Graphene is grown using chemical vapour deposition technique, is grown
Using methane as precursor in journey, growth atmosphere is the mixed gas of hydrogen and argon gas, and mixed proportion is 1:1, growth course
In growth temperature be 1050 DEG C, growth time be 20 minutes.Graphene is single-layer graphene, and thickness is about 0.5 nanometer, afterwards
In graphene film surface spin coating PMMA, using FeCl3Solution corrosion falls copper foil, is then shifted using wet method by graphene film
The surface of In nanostructureds is transferred to, the PMMA for getting rid of graphene film surface is alternately cleaned using acetone and ethanol.
The test result of the high density InGaAs quantum dots for the luminescence generated by light that this implementation is prepared is similar to Example 1,
It will not be repeated here.
Embodiment 3
The preparation method of the InGaAs quantum dots of the growth of the present embodiment on gaas substrates, comprises the following steps：
(1) GaAs (115) A substrates are cleaned：
GaAs (115) A substrates are cleaned 10 minutes in trichloro ethylene, acetone, EtOH Sonicate successively, remove surface organic matter,
Dried up after being finally cleaned by ultrasonic 10 minutes in deionized water with nitrogen；
(2) GaAs (115) A substrates carry out degasification and deoxidation pretreatment：Send into the pre- degasification of molecular beam epitaxy system Sample Room
Half an hour, growth room is sent into after completing degasification, under the protection of arsenic line, high annealing removes the oxidation film layer of substrate surface, its
The temperature in arsenic source is 280 DEG C in middle deoxidation process, and underlayer temperature is 600 DEG C, and the time is 10 minutes；
(3) GaAs (115) A Grown InGaAs quantum dot layers：Using molecular beam epitaxial growth InGaAs quantum dots,
Gallium source temperature is 970 DEG C in growth course, and indium source temperature is 810 DEG C, and arsenic source temperature is 300 DEG C, and underlayer temperature is 510 DEG C, raw
It is 13s for a long time；
The density of InGaAs quantum dots is 2.7 × 10 in the InGaAs quantum dot layers of the present embodiment10cm-2, quantum dot it is flat
Height is 10 nanometers, and average diameter is 25 nanometers；
(4) GaAs cap rocks are covered on InGaAs quantum dot layers：Using molecular beam epitaxial growth GaAs cap rocks, growth course
In gallium source temperature be 880 DEG C, arsenic source temperature be 290 DEG C, underlayer temperature be 450 DEG C, growth time is 300s；GaAs cap rocks
Thickness is 8 nanometers；
(5) In nanostructured layers are deposited on GaAs cap rocks surface：Grown using electron-beam evaporation mode, it is electric in growth course
The power of beamlet is 80W, and underlayer temperature is 460 DEG C, and growth time is 250s；The average diameter of the In nanostructureds is received for 35
Rice.
(6) In nanostructureds layer surface covering graphene cap rock：Graphene is grown using chemical vapour deposition technique, is grown
Using methane as precursor in journey, growth atmosphere is the mixed gas of hydrogen and argon gas, and mixed proportion is 1:1, growth course
In growth temperature be 1050 DEG C, growth time be 40 minutes.The number of plies of graphene is layer 2-3, and thickness is 0.8-1.5 nanometers.
In graphene film surface spin coating PMMA, using FeCl3Solution corrosion falls copper foil, is then shifted using wet method by graphene film
The surface of In nanostructureds is transferred to, the PMMA for getting rid of graphene film surface is alternately cleaned using acetone and ethanol.
The test result of the high density InGaAs quantum dots for the luminescence generated by light that this implementation is prepared is similar to Example 1,
It will not be repeated here.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by the embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. the InGaAs quantum dots of growth on gaas substrates, it is characterised in that include GaAs (115) A successively from the bottom to top and serve as a contrast
Bottom, InGaAs quantum dot layers, GaAs cap rocks, In nanostructured layers and graphene coating.
2. the InGaAs quantum dots of growth according to claim 1 on gaas substrates, it is characterised in that the InGaAs
The density of InGaAs quantum dots is 2 × 10 in quantum dot layer10-8×1010cm-2；The average height of InGaAs quantum dots is 5-10
Nanometer, average diameter is 10-25 nanometers.
3. the InGaAs quantum dots of growth according to claim 1 on gaas substrates, it is characterised in that the GaAs lids
The thickness of layer is 4-10 nanometers.
4. the InGaAs quantum dots of growth according to claim 1 on gaas substrates, it is characterised in that described In nanometers
The average diameter of In nanostructureds is 20-80 nanometers in structure sheaf.
5. the InGaAs quantum dots of growth according to claim 1 on gaas substrates, it is characterised in that the graphene
The thickness of coating is 0.4-2.5 nanometers, including 1-5 layer graphenes.
6. the preparation method of the InGaAs quantum dots of growth on gaas substrates, it is characterised in that comprise the following steps：
(1) GaAs (115) A substrates are cleaned；
(2) degasification is carried out to GaAs (115) A substrates and deoxidation is pre-processed；
(3) in GaAs (115) A Grown InGaAs quantum dot layers；
(4) GaAs cap rocks are covered on InGaAs quantum dot layers；
(5) In nanostructured layers are deposited on GaAs cap rocks surface；
(6) a layer graphene cap rock is covered in In nanostructureds layer surface.
7. the preparation method of the InGaAs quantum dots of growth according to claim 6 on gaas substrates, it is characterised in that
Step (3) GaAs (115) A Grown InGaAs quantum dot layers, be specially：
Using molecular beam epitaxial growth InGaAs quantum dots, indium source temperature is 700-810 DEG C in growth course, and gallium source temperature is
800-1000 DEG C, arsenic source temperature is 270-300 DEG C, and underlayer temperature is 450-550 DEG C, and growth time is 8-20s.
8. the preparation method of the InGaAs quantum dots of growth according to claim 6 on gaas substrates, it is characterised in that
Step (4) is described to cover GaAs cap rocks on InGaAs quantum dot layers, is specially：
On InGaAs quantum dot layers, using molecular beam epitaxial growth GaAs cap rocks, the gallium source temperature in growth course is 800-
950 DEG C, arsenic source temperature is 250-350 DEG C, and underlayer temperature is 350-500 DEG C, and growth time is 200-350s.
9. the preparation method of the InGaAs quantum dots of growth according to claim 6 on gaas substrates, it is characterised in that
Step (5) is described to deposit In nanostructured layers on GaAs cap rocks surface, is specially：
Using electron-beam evaporation mode, the power of electron beam is in GaAs cap rocks surface deposition In nanostructured layers, growth course
65-90W, underlayer temperature is 400-600 DEG C, and growth time is 200-350s.
10. the preparation method of the InGaAs quantum dots of growth according to claim 6 on gaas substrates, its feature exists
In step (6) is described to cover a layer graphene cap rock in In nanostructureds layer surface, is specially：
Graphene film is prepared on copper foil using chemical vapor deposition：Precursor, growth are used as using methane in growth course
Atmosphere is the mixed gas of hydrogen and argon gas, and mixed proportion is 1:1, the growth temperature in growth course is 900~1050 DEG C, raw
It is 5~30 minutes for a long time；Afterwards in graphene film surface spin coating PMMA, using FeCl3Solution corrosion falls copper foil, using wet
Method shifts the surface that graphene film is transferred to In nanostructureds, and it is thin to get rid of graphene using acetone and ethanol alternating cleaning
The PMMA on film surface.
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