CN107068394A - A kind of capacitor device - Google Patents
A kind of capacitor device Download PDFInfo
- Publication number
- CN107068394A CN107068394A CN201710393380.3A CN201710393380A CN107068394A CN 107068394 A CN107068394 A CN 107068394A CN 201710393380 A CN201710393380 A CN 201710393380A CN 107068394 A CN107068394 A CN 107068394A
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- capacitor
- grading ring
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- grading
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- 239000003990 capacitor Substances 0.000 title claims abstract description 161
- 239000012212 insulator Substances 0.000 claims abstract description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 18
- 238000010276 construction Methods 0.000 abstract description 11
- 238000012423 maintenance Methods 0.000 abstract description 11
- 238000009434 installation Methods 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/14—Protection against electric or thermal overload
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The present invention relates to a kind of capacitor device, including being from top to bottom laminated the Capacitor stack constituted, grading shield, the first grading ring, the second grading ring and the 3rd grading ring vertically successively by multiple first capacitor frameworks, multiple second capacitor frameworks and multiple 3rd capacitor frameworks, bridle iron is fixedly installed at the top of Capacitor stack, grading shield is covered on bridle iron;The first grading ring is set with multiple first capacitor frameworks;The second grading ring is set with multiple second capacitor frameworks;The 3rd grading ring is set with multiple 3rd capacitor frameworks;3rd capacitor framework is connected by the first support insulator with low-voltage tube mother, the female C-shaped periphery for being enclosed on the 3rd capacitor framework of low-voltage tube.The present invention is simple in construction, and floor space is small, and installation workload is small, overhauls and easy to maintenance;Processing is simple, and cost is low;The electric-field intensity of capacitor can be reduced, the peak demand at present to high-voltage capacitor device electric-field intensity is met, with good economic benefits prospect.
Description
Technical field
The present invention relates to capacitor technology field, more particularly to a kind of capacitor device.
Background technology
The main waterpower resourses of China concentrate on west area, and main coal, wind-force and solar energy resources concentrate on northwest
Area, main loads center but concentrates on coastal developed regions, therefore China needs to solve long range large capacity transmission, improves me
State's energy development and utilization ratio, it is also desirable to study higher voltage grade technology of transmission of electricity.Extra-high voltage direct-current transmission is world power grid
The important development direction of technology, is the commanding elevation of electric power network technique.Because there is the process of rectification and inversion in extra-high voltage direct-current transmission,
Substantial amounts of harmonic wave will necessarily be produced, it is necessary to install substantial amounts of wave filter, therefore extra-high voltage direct-current transmission engineering DC filter
Development it is particularly interesting.
As direct current transportation is fast-developing in China, extra-high voltage direct-current transmission as long range large capacity transmission crucial skill
Art, it can improve the transmission capacity of system, improve the stability of system, have very big development space in high-end market.
With the fast development of technical merit, ultra-high direct-current transmission voltage more and more higher, transmission capacity are increasing, fed distance is got over
Come more remote.And open air extra-high voltage direct-current filter capacitor device floor space is big, tower height is high, construction cost is also higher.
First bar ± 1100kV extra-high voltage direct-current transmission engineering the high voltage direct current filter capacitors in the world use indoor installation under lateral thinking.Family
Interior installing space is limited, and capacitor device pylon is again of a relatively high, requires stricter to safety net distance around, to prevent capacitor
Apparatus surface produces corona and surrounding devices or building is discharged, while construction cost is also controlled, and then to capacitor device table
Face electric-field intensity proposes higher standard, it is desirable to which capacitor device maximum field intensity is less than 12kV/cm.In summary, capacitor
The electric-field intensity problem of apparatus surface is just than more prominent, it is necessary to further investigate.
It is limited to solve indoor depth of building, in the case that space is limited, solves the problems, such as the corona of capacitor device
(it is required that maximum field strength control is in below 12kV/cm), using conventional increase pipe mother and terminal bulb diameter reduction capacitor dress
The method for putting electric-field intensity, far can not meet the requirement less than 12kV/cm.High voltage direct current filter capacitor will be installed on indoor
Just have to solve this technical barrier.
The content of the invention
It is an object of the invention to provide a kind of capacitor device, technical problem to be solved is:Managed using conventional increase
The method that female and terminal bulb diameter reduces capacitor device electric-field intensity, far can not meet the requirement less than 12kV/cm.
The technical scheme that the present invention solves above-mentioned technical problem is as follows:A kind of capacitor device, including by the multiple first electricity
Container frame, multiple second capacitor frameworks and multiple 3rd capacitor frameworks electric capacity that from top to bottom vertical stacking is constituted successively
Steel is fixedly installed at the top of device tower, grading shield, the first grading ring, the second grading ring and the 3rd grading ring, the Capacitor stack
Bearing, the grading shield is covered on the bridle iron;The first grading ring is set with multiple first capacitor frameworks;Multiple institutes
State and be set with the second grading ring on the second capacitor framework;The 3rd is set with multiple 3rd capacitor frameworks to press
Ring;The capacitor framework of bottom is connected by the first support insulator with low-voltage tube mother in multiple 3rd capacitor frameworks,
The periphery of female C-shaped the 3rd capacitor framework for being enclosed on correspondence Capacitor stack bottom of the low-voltage tube.
The beneficial effects of the invention are as follows:The present apparatus is simple in construction, and no complex component, floor space is small, on-site installation work
Amount is small, overhauls and easy to maintenance;Low to manufacturing technique requirent, production and processing is simple, and cost is low;
Grading shield, the first grading ring, the second grading ring, the 3rd grading ring and low-voltage tube mother can constitute equal laminated structure, can drop
The low electric-field intensity of capacitor, meets the peak demand at present to high-voltage capacitor device electric-field intensity, with good economy
Benefit prospect.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement.
Further, grading shield institute band current potential is high-pressure side inlet wire current potential, first grading ring, the second grading ring and
3rd grading ring institute band current potential is capacitor framework current potential, and the female institute's band current potential of the low-voltage tube is low-pressure end line potential.
Beneficial effect using above-mentioned further scheme is:The electric-field intensity of Capacitor stack can be reduced, electric capacity is effectively prevented
Device tower surface produces corona, meets at present to UHV Transmission Engineering power capacitor apparatus electric-field intensity, with good economy
Benefit prospect.
Further, first grading ring, the second grading ring and the 3rd grading ring are Fang Huan, first grading ring
Outside dimensions is less than the outside dimensions of grading shield, and the outside dimensions of second grading ring is less than the outer chi of the first grading ring
Very little, the outside dimensions of the 3rd grading ring is less than the outside dimensions of the second grading ring, and the female outside dimensions of the low-voltage tube is small
In or equal to the 3rd grading ring outside dimensions.
Beneficial effect using above-mentioned further scheme is:Grading shield, the first grading ring, the second grading ring, the 3rd press
Female simple in construction of ring and low-voltage tube, no complex component, floor space is small, and on-site installation work amount is small, maintenance and easy to maintenance;
Low to manufacturing technique requirent, production and processing is simple, and cost is low.
Further, in multiple 3rd capacitor frameworks top the 3rd capacitor framework and its next 3rd capacitor
Framework is set with the 3rd grading ring;Eight the 3rd capacitor frameworks below two the 3rd capacitor frameworks in correspondence top, often
The bottom of two the 3rd capacitor frameworks is set with the 3rd grading ring;Nine below eight the 3rd capacitor frameworks of correspondence
Individual 3rd capacitor framework, the bottom of every three the 3rd capacitor frameworks is set with the 3rd grading ring.
Beneficial effect using above-mentioned further scheme is:Multiple 3rd grading rings can reduce the electric-field strength of Capacitor stack
Degree, effectively prevents Capacitor stack surface from producing corona, meets at present to UHV Transmission Engineering power capacitor apparatus electric-field strength
Degree, with good economic benefits prospect.
Further, each first capacitor framework, the second capacitor framework and the 3rd capacitor framework include electric capacity
Device group, supporter and multiple second support insulators, multiple second support insulators and capacitor bank are placed in the supporter
Upper end, multiple second support insulators around the capacitor bank, the supporter by multiple second support insulators with
Multiple supporters connection above it, and the first capacitor framework at the top of Capacitor stack by multiple second support insulators with
Bridle iron is connected.
Beneficial effect using above-mentioned further scheme is:First grading ring, the second grading ring and the 3rd grading ring difference
On the supporter for being sleeved on correspondence capacitor framework, simple in construction, no complex component, floor space is small, on-site installation work amount
It is small, overhaul and easy to maintenance.
Further, the quantity of first grading ring is 1~3, and the quantity of second grading ring is 1~5, described
3rd grading ring quantity is 1~19.
Further, the lower end of the Capacitor stack is provided with multiple 3rd support insulators, each described 3rd pillar
The bottom of insulator is provided with footing piece, and each described footing piece is fixedly connected by foundation bolt with earth's surface.
Beneficial effect using above-mentioned further scheme is:Simple in construction, no complex component, floor space is small, steadiness
By force;On-site installation work amount is small, overhauls and easy to maintenance.
Brief description of the drawings
Fig. 1 is a kind of front view of capacitor device of the invention;
Fig. 2 is the front view of grading shield of the present invention;
Fig. 3 is the front view of the first grading ring of the invention;
Fig. 4 is the top view of the first grading ring of the invention;
Fig. 5 is the front view of the second grading ring of the invention;
Fig. 6 is the top view of the second grading ring of the invention;
Fig. 7 is the front view of the 3rd grading ring of the invention;
Fig. 8 is the top view of the 3rd grading ring of the invention;
Fig. 9 is the female front view of low-voltage tube of the present invention;
Figure 10 is the female top view of low-voltage tube of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1st, Capacitor stack, the 101, first capacitor framework, the 102, second capacitor framework, the 103, the 3rd capacitor framework,
104th, capacitor bank, 105, supporter, the 106, second support insulator;
2nd, grading shield, the 3, first grading ring, the 4, second grading ring, the 5, the 3rd grading ring, 6, bridle iron, the 7, first pillar is exhausted
Edge, 8, low-voltage tube it is female, the 9, the 3rd support insulator, 10, footing piece, 11, foundation bolt.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in Figures 1 to 10, a kind of capacitor device, including by multiple first capacitor frameworks 101, multiple second electricity
Container frame 102 and multiple 3rd capacitor frameworks 103 from top to bottom vertical stacking is constituted successively Capacitor stack 1, grading shield
2nd, the first grading ring 3, the second grading ring 4 and the 3rd grading ring 5, the top of the Capacitor stack 1 are fixedly installed bridle iron 6,
The grading shield 2 is covered on the bridle iron 6;The first grading ring 3 is set with multiple first capacitor frameworks 101;It is multiple
The second grading ring 4 is set with the second capacitor framework 102;It is set with multiple 3rd capacitor frameworks 103
3rd grading ring 5;In multiple 3rd capacitor frameworks 103 the capacitor framework of bottom by the first support insulator 7 with
Low-voltage tube mother 8 connects, C-shaped the 3rd capacitor framework 103 for being enclosed on correspondence Capacitor stack 1 bottom of low-voltage tube mother 8 it is outer
Enclose.
The present apparatus is simple in construction, and no complex component, floor space is small, and on-site installation work amount is small, overhauls and easy to maintenance;
Low to manufacturing technique requirent, production and processing is simple, and cost is low;
Grading shield 2, the first grading ring 3, the second grading ring 4, the 3rd grading ring 5 and low-voltage tube mother 8 can constitute equal laminated structure,
The electric-field intensity of Capacitor stack 1 can be reduced, effectively prevents the surface of Capacitor stack 1 from producing corona, is met at present to UHV transmission
Engineering power capacitor apparatus electric-field intensity, with good economic benefits prospect.
In above-described embodiment, the institute of the grading shield 2 band current potential is high-pressure side inlet wire current potential, first grading ring 3, second
Grading ring 4 and the institute of the 3rd grading ring 5 band current potential are capacitor framework current potential, and the female 8 institute band current potentials of the low-voltage tube bring out for low pressure
Line current potential.
The electric-field intensity of Capacitor stack 1 can be reduced, effectively prevents the surface of Capacitor stack 1 from producing corona, is met at present to spy
High voltage power transmission engineering power capacitor apparatus electric-field intensity, with good economic benefits prospect.
In above-described embodiment, first grading ring 3, the second grading ring 4 and the 3rd grading ring 5 are Fang Huan, and described
The outside dimensions of one grading ring 3 is less than the outside dimensions of grading shield 2, and the outside dimensions of second grading ring 4 is equal less than first
The outside dimensions of pressure ring 3, the outside dimensions of the 3rd grading ring 5 is less than the outside dimensions of the second grading ring 4, the low-voltage tube
The outside dimensions of mother 8 is less than or equal to the outside dimensions of the 3rd grading ring 5.
First grading ring 3, the second grading ring 4 and the 3rd grading ring 5 are square structure, and edge is circular arc,
Constitute ring-type;The outside dimensions of first grading ring 3, the second grading ring 4 and the 3rd grading ring 5 be its edge length and width,
It is exactly that the length of the first grading ring 3 is less than the length of grading shield 2, the width of the first grading ring 3 is less than the width of grading shield 2;With
And second the length of grading ring 4 be less than the length of the first grading ring 3, the width of the second grading ring 4 is less than the first grading ring 3
Width;And the 3rd the length of grading ring 5 be less than the length of the second grading ring 4, the width of the 3rd grading ring 5 presses less than second
The width of ring 4;
Grading shield 2, the first grading ring 3, the second grading ring 4, the 3rd grading ring 5 and low-voltage tube mother 8 it is simple in construction, without multiple
Miscellaneous part, floor space is small, and on-site installation work amount is small, overhauls and easy to maintenance;It is low to manufacturing technique requirent, production and processing letter
Single, cost is low.
In above-described embodiment, two the 3rd capacitor frameworks 103 at top are equal in multiple 3rd capacitor frameworks 103
It is set with the 3rd grading ring 5;Eight the 3rd capacitor frameworks 103 of the lower section of the 3rd capacitor framework of two, top of correspondence 103, often
The bottom of two the 3rd capacitor frameworks 103 is set with the 3rd grading ring 5;Eight the 3rd capacitor frameworks 103 of correspondence
Nine the 3rd capacitor frameworks 103 of lower section, the bottom of every three the 3rd capacitor frameworks 103 is set with one the 3rd and pressed
Ring 5.
Two the 3rd capacitor frameworks 103 of the top are set with the 3rd in multiple 3rd capacitor frameworks 103
Grading ring 5;
Two be set with the 3rd grading ring 5 the 3rd capacitor framework 103 eight the 3rd electric capacity being sequentially connected of lower end
Four the 3rd grading rings 5 are set with device framework 103, eight the 3rd capacitor frameworks 103, from top to bottom second the 3rd
Capacitor framework 103, the 4th the 3rd capacitor framework 103, the 6th the 3rd capacitor framework 103, the 8th the 3rd electric capacity
Device framework 103 is set with the 3rd grading ring 5;
Nine the 3rd capacitor frameworks 103 of the lower section of eight the 3rd capacitor frameworks of correspondence 103, nine the 3rd capacitors
Three the 3rd grading rings 5 are set with framework 103, the 3rd the 3rd capacitor framework 103, the 6th the 3rd electricity from top to bottom
The 3rd grading ring 5 is set with container frame 103, the 9th the 3rd capacitor framework 103.
Multiple 3rd grading rings 5 can reduce the electric-field intensity of Capacitor stack 1, effectively prevent the surface of Capacitor stack 1 from producing electricity
It is dizzy, meet at present to UHV Transmission Engineering power capacitor apparatus electric-field intensity, with good economic benefits prospect.
In above-described embodiment, each first capacitor framework 101, the second capacitor framework 102 and the 3rd capacitor frame
Frame 103 includes capacitor bank 104, supporter 105 and multiple second support insulators 106, multiple second support insulators 106
The upper end of the supporter 105 is placed in capacitor bank 104, multiple second support insulators 106 are around the capacitor bank
104, the supporter 105 is connected by multiple second support insulators 106 with multiple supporters 105 above it, and electric capacity
The first capacitor framework 101 at the top of device tower 1 is connected by multiple second support insulators 106 with bridle iron 6.
First grading ring 3, the second grading ring 4 and the 3rd grading ring 5 are set in the supporter of correspondence capacitor framework
Simple in construction on 105, no complex component, floor space is small, and on-site installation work amount is small, overhauls and easy to maintenance.
In above-described embodiment, the quantity of first grading ring 3 is 1~3, the quantity of second grading ring 4 for 1~
5, the quantity of the 3rd grading ring 5 is 1~19.
In above-described embodiment, the lower end of the Capacitor stack 1 is provided with multiple 3rd support insulators 9, described in each
The bottom of 3rd support insulator 9 is provided with footing piece 10, and each described footing piece 10 passes through foundation bolt 11 and earth's surface
It is fixedly connected.
Simple in construction, no complex component, floor space is small, and steadiness is strong;On-site installation work amount is small, maintenance and maintenance side
Just.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (7)
1. a kind of capacitor device, it is characterised in that:Including by multiple first capacitor frameworks (101), multiple second capacitors
Framework (102) and multiple 3rd capacitor frameworks (103) are vertical from top to bottom successively to be laminated the Capacitor stack (1) constituted, presses
(2), the first grading ring (3), the second grading ring (4) and the 3rd grading ring (5) are covered, the top of the Capacitor stack (1), which is fixed, to be set
Bridle iron (6) is equipped with, the grading shield (2) is covered on the bridle iron (6);Covered on multiple first capacitor frameworks (101)
Equipped with the first grading ring (3);The second grading ring (4) is set with multiple second capacitor frameworks (102);It is multiple described
The 3rd grading ring (5) is set with 3rd capacitor framework (103);Bottom in multiple 3rd capacitor frameworks (103)
Capacitor framework is connected by the first support insulator (7) with low-voltage tube female (8), and the low-voltage tube female (8) is C-shaped to be enclosed on correspondence
The periphery of the 3rd capacitor framework (103) of Capacitor stack (1) bottom.
2. a kind of capacitor device according to claim 1, it is characterised in that:Grading shield (2) the institute band current potential is high pressure
Inlet wire current potential is held, first grading ring (3), the second grading ring (4) and the 3rd grading ring (5) institute band current potential are capacitor framework
Current potential, the low-voltage tube female (8) institute band current potential is low-pressure end line potential.
3. a kind of capacitor device according to claim 1, it is characterised in that:First grading ring (3), the second grading ring
(4) and the 3rd grading ring (5) is Fang Huan, the outside dimensions of first grading ring (3) is less than the outer chi of grading shield (2)
Very little, the outside dimensions of second grading ring (4) is less than the outside dimensions of the first grading ring (3), the 3rd grading ring (5)
Outside dimensions is less than the outside dimensions of the second grading ring (4), and the outside dimensions of the low-voltage tube female (8) is equal less than or equal to the 3rd
The outside dimensions of pressure ring (5).
4. a kind of capacitor device according to claim 1, it is characterised in that:Multiple 3rd capacitor frameworks (103)
The 3rd capacitor framework (103) at middle top and its next 3rd capacitor framework (103) are set with the 3rd grading ring (5);
Eight the 3rd capacitor frameworks (103) below two the 3rd capacitor frameworks (103) in correspondence top, the capacitor of each two the 3rd
The bottom of framework (103) is set with the 3rd grading ring (5);Nine below eight the 3rd capacitor frameworks (103) of correspondence
Individual 3rd capacitor framework (103), the bottom of every three the 3rd capacitor frameworks (103) is set with the 3rd grading ring
(5)。
5. a kind of capacitor device according to claim 1, it is characterised in that:Each first capacitor framework (101),
Two capacitor frameworks (102) and the 3rd capacitor framework (103) include capacitor bank (104), supporter (105) and multiple the
Two support insulators (106), multiple second support insulators (106) and capacitor bank (104) are placed in the supporter (105)
Upper end, multiple second support insulators (106) are around the capacitor bank (104), and the supporter (105) passes through multiple the
Two support insulators (106) are connected with multiple supporters (105) above it, and the first capacitor at the top of Capacitor stack (1)
Framework (101) is connected by multiple second support insulators (106) with bridle iron (6).
6. a kind of capacitor device according to claim 1, it is characterised in that:The quantity of first grading ring (3) be 1~
3, the quantity of second grading ring (4) is 1~5, and the 3rd grading ring (5) quantity is 1~19.
7. according to a kind of any one of claim 1 to 6 capacitor device, it is characterised in that:Under the Capacitor stack (1)
End is provided with multiple 3rd support insulators (9), and the bottom of each the 3rd support insulator (9) is provided with footing piece
(10), each described footing piece (10) is fixedly connected by foundation bolt (11) with earth's surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710393380.3A CN107068394A (en) | 2017-05-27 | 2017-05-27 | A kind of capacitor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710393380.3A CN107068394A (en) | 2017-05-27 | 2017-05-27 | A kind of capacitor device |
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Publication Number | Publication Date |
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CN107068394A true CN107068394A (en) | 2017-08-18 |
Family
ID=59617394
Family Applications (1)
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CN201710393380.3A Pending CN107068394A (en) | 2017-05-27 | 2017-05-27 | A kind of capacitor device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113871218A (en) * | 2021-09-24 | 2021-12-31 | 桂林电力电容器有限责任公司 | Machining and assembling method for inclined tower power capacitor bank |
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CN201877825U (en) * | 2010-12-18 | 2011-06-22 | 桂林电力电容器有限责任公司 | Multi-tower high-voltage direct-current filter capacitor device |
CN201878009U (en) * | 2010-11-16 | 2011-06-22 | 扬州市鑫源电气有限公司 | High-capacity capacitor tower |
CN201966612U (en) * | 2011-01-31 | 2011-09-07 | 桂林电力电容器有限责任公司 | Multi-tower suspension type high voltage direct current filter capacitor device |
WO2012088676A1 (en) * | 2010-12-29 | 2012-07-05 | 荣信电力电子股份有限公司 | 66kv light-controlled water-cooled thyristor valve bank |
CN202856374U (en) * | 2012-10-09 | 2013-04-03 | 上海思源电力电容器有限公司 | Novel capacitor tower for alternating-current filtering or parallel compensation |
CN206789430U (en) * | 2017-05-27 | 2017-12-22 | 桂林电力电容器有限责任公司 | A kind of capacitor device |
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2017
- 2017-05-27 CN CN201710393380.3A patent/CN107068394A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201878009U (en) * | 2010-11-16 | 2011-06-22 | 扬州市鑫源电气有限公司 | High-capacity capacitor tower |
CN201877825U (en) * | 2010-12-18 | 2011-06-22 | 桂林电力电容器有限责任公司 | Multi-tower high-voltage direct-current filter capacitor device |
WO2012088676A1 (en) * | 2010-12-29 | 2012-07-05 | 荣信电力电子股份有限公司 | 66kv light-controlled water-cooled thyristor valve bank |
CN201966612U (en) * | 2011-01-31 | 2011-09-07 | 桂林电力电容器有限责任公司 | Multi-tower suspension type high voltage direct current filter capacitor device |
CN202856374U (en) * | 2012-10-09 | 2013-04-03 | 上海思源电力电容器有限公司 | Novel capacitor tower for alternating-current filtering or parallel compensation |
CN206789430U (en) * | 2017-05-27 | 2017-12-22 | 桂林电力电容器有限责任公司 | A kind of capacitor device |
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CN113871218A (en) * | 2021-09-24 | 2021-12-31 | 桂林电力电容器有限责任公司 | Machining and assembling method for inclined tower power capacitor bank |
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Application publication date: 20170818 |