CN107065332A - A kind of Fanout line structure, display panel and its manufacture method - Google Patents
A kind of Fanout line structure, display panel and its manufacture method Download PDFInfo
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- CN107065332A CN107065332A CN201710079287.5A CN201710079287A CN107065332A CN 107065332 A CN107065332 A CN 107065332A CN 201710079287 A CN201710079287 A CN 201710079287A CN 107065332 A CN107065332 A CN 107065332A
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 14
- 239000004744 fabric Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
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- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of Fanout line structure, display panel and its manufacture method.Wherein, the Fanout line structure includes：The fan-out line that a plurality of length differs；Every the fan-out line includes the first wiring layer, at least partly described fan-out line includes the second wiring layer, and an insulating barrier is included between second wiring layer and first wiring layer, the two ends of second wiring layer are electrically connected in the diverse location of first wiring layer；The impedance of a plurality of fan-out line is identical.In the embodiment of the present invention, the impedance of fan-out line is reduced by two-layer wiring, it is identical that realization is respectively fanned out to line impedence, enhances display effect.
Description
Technical field
The present invention relates to display technology field, espespecially a kind of Fanout line structure, display panel and its manufacture method.
Background technology
Display panel is the important component of liquid crystal display device, under the cooperation of backlight module and drive circuit, is shown
Show that panel can show that the picture of people's needs.
Display panel 101 includes thin film transistor (TFT) (TFT) array 102 and the drive circuit mould for driving tft array
Block 103, to realize the corresponding corresponding signal line (example being applied in tft array 102 of the signal output of drive circuit module 103
Such as data wire or grid line) on, it is necessary to be correspondingly connected to using fan-out line 104 from a certain output pin of drive circuit module 103
On a certain signal wire of tft array 102.The setting area of fan-out line 104 is then referred to as " fanout area (Fan-out Area) ".
However, from signal wire distance of the output pin of drive circuit module 103 to tft array 102 be it is inconsistent, must
The length of fan-out line 104 can be so caused to differ larger, therefore the impedance being easily caused between a plurality of fan-out line of fanout area is uneven
It is even, cause distorted signals, longer fan-out line distorted signals is more serious, be desirable so as to influence the display effect of display panel
Avoid as far as possible.
The content of the invention
In order to solve the above-mentioned technical problem, the invention provides a kind of Fanout line structure, display panel and its manufacture method,
Avoid being fanned out to line impedence inequality, influence the display effect of display panel.
In order to reach the object of the invention, the invention provides a kind of Fanout line structure, including：
The fan-out line that a plurality of length differs；
Every fan-out line includes the first wiring layer, and at least partly described fan-out line includes the second wiring layer, and described
An insulating barrier is included between second wiring layer and first wiring layer, the two ends of second wiring layer are electrically connected in institute
State the diverse location of the first wiring layer；
The impedance of a plurality of fan-out line is identical.
Optionally, in a plurality of fan-out line, in addition to the length most short corresponding fan-out line of the first wiring layer, remaining is fanned out to
Line includes the second wiring layer.
Optionally, in a plurality of fan-out line, every fan-out line includes the second wiring layer.
Optionally, described at least part fan-out line refers to including the second wiring layer：At least partly described fan-out line bag
One or more second wiring layers are included, and the two ends of each second wiring layer are electrically connected in the different positions of first wiring layer
Put.
Optionally, the first wiring layer of different length, the total length for all second wiring layers being connected electrically is different.
Optionally, second wiring layer is located at the surface of first wiring layer of its electrical connection.
Optionally, one end of second wiring layer is connected to the first position of first wiring layer, second cloth
The other end of line layer is connected to the second place of first wiring layer, and the length of second wiring layer is equal to described first
Length of the first position described in wiring layer to the second place.
Optionally, one end of second wiring layer is connected to the first position of first wiring layer, second cloth
The other end of line layer is connected to the second place of first wiring layer, and the length of second wiring layer is less than described first
Length of the first position described in wiring layer to the second place.
The embodiment of the present invention also provides a kind of display panel, including drive circuit module and thin film transistor (TFT) array, and
Above-mentioned Fanout line structure, the Fanout line structure is used to connect the drive circuit module and the thin film transistor (TFT) array.
The embodiment of the present invention also provides a kind of manufacture method of display panel, including：
The substrate for being preset with fanout area is provided；
The first conductive layer is formed by depositing in the default fanout area, first is obtained in first Conductive Layer Etch
Wiring layer；
The first insulating barrier is covered in first conductive layer surface；
The second conductive layer is formed by depositing in first surface of insulating layer, the is obtained in second Conductive Layer Etch
Two wiring layers；
The second insulating barrier is covered in second conductive layer surface；
And, the two ends position of second wiring layer is performed etching on second insulating barrier, forms described
Second exposed portion of the second wiring layer, needs the position being electrically connected with second wiring layer to enter in first wiring layer
Row etching, forms the first exposed portion of first wiring layer, in the described first exposed portion and described second for needing to electrically connect
Conducting film is covered between exposed portion.
In Fanout line structure provided in an embodiment of the present invention, pass through partial sector one second cloth in parallel in the first wiring layer
Line layer, so as to reduce the resistance of distal end fan-out line, and by adjusting the length of the second wiring layer, can cause each fan-out line
Impedance is basically identical, so as to realize impedance uniformity, therefore, during using Fanout line structure formation display panel, it shows
Effect can be improved.Also, the fan-out line of the Fanout line structure need not additionally increase being fanned out to needed for Fanout line structure
The width in area, is highly suitable to be applied in narrow frame display.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and obtained in claim and accompanying drawing.
Brief description of the drawings
Accompanying drawing is used for providing further understanding technical solution of the present invention, and constitutes a part for specification, with this
The embodiment of application is used to explain technical scheme together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is existing display panel schematic diagram；
Fig. 2 is Fanout line structure schematic diagram of the embodiment of the present invention；
Fig. 3 for the embodiment of the present invention Fanout line structure in be not provided with the second wiring layer fan-out line sectional view；
Fig. 4 be Fanout line structure of the embodiment of the present invention in be provided with the second wiring layer fan-out line sectional view.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with accompanying drawing to the present invention
Embodiment be described in detail.It should be noted that in the case where not conflicting, in the embodiment and embodiment in the application
Feature can mutually be combined.
Fig. 2 is the schematic diagram of the Fanout line structure of one embodiment of the invention.In this embodiment, Fanout line structure 20 is set
In fanout area between drive circuit module and tft array, the Fanout line structure 20 is used for certain driving circuit module
Multiple pins 300 are correspondingly connected in many signal lines 400 of tft array, so that, the drive circuit module can drive this
The corresponding region of many signal lines of tft array, realizes display function.For convenience of description, example is given including 5 in fig. 2
The Fanout line structure of bar fan-out line 100, i.e. fan-out line 100-1,100-2,100-3,100-4,100-5, fan-out line 100 it is specific
Bar number is not restricted, according to drive circuit module the size in the tft array region driven can be needed to set.
In this embodiment, the length of a plurality of fan-out line 100 differs, for example, positioned at middle fan-out line 100-3 length most
Short, the length of other fan-out lines of fan-out line 100-3 both sides increases successively, i.e. fan-out line 100-4, fan-out line 100-5 length
Increase successively, fan-out line 100-2, fan-out line 100-1 length also increase successively.
Every fan-out line 100 of correspondence, as shown in Fig. 2 one first wiring layer 110 is provided with, a plurality of fan-out line 100-1,
The length of the first wiring layer 110 set respectively on 100-2,100-3,100-4,100-5 differs, namely their length not phase
Together.
In an embodiment of the present invention, the first wiring layer 110 of different fan-out lines 100 can be made of identical material,
And their width, thickness are also essentially identical, therefore, the impedance of the first wiring layer 110 of the different length of different fan-out lines 100
Differ.
At least part fan-out line 100 includes the second wiring layer 120, is wrapped between the second wiring layer 120 and the first wiring layer 110
Containing an insulating barrier, the two ends of the second wiring layer 120 are electrically connected in the diverse location of the first wiring layer 110, i.e., the second wiring
Layer is parallel to a section of the first wiring layer 100.It should be noted that for the second wiring layer of clearer displaying in Fig. 2
120, the position of the second wiring layer 120 is offset, second wiring layer 120 can be located at the first wiring layer 110 just on
Side.Certainly, the second wiring layer 120 can also be located at the position in Fig. 2.Certainly, the wiring direction of the second wiring layer 120 can also
It is inconsistent with the first wiring layer 110.
The electrical connection of first wiring layer 110 and the second wiring layer 120 realized by a conducting film 130, the conducting film 130
Resistance is generally much smaller than the resistance of the first wiring layer and the second wiring layer, such as, is the first wiring layer 110 and the second wiring layer
The 1/10 of 120,1/100 etc., so as to ignore.Certainly, if the resistance ratio of conducting film 130 is larger, consideration is needed to lead
Influence of the resistance of electrolemma 130 to the resistance of fan-out line 100, now, need to consider resistance, the conducting film of the first wiring layer 110
The resistance of 130 resistance, the second wiring layer 120, to determine the length of the second wiring layer 120.
The length of second wiring layer 120 can be in parallel with it the first wiring layer 110 parallel blocks (i.e. the first wiring layer
The section in parallel with the second wiring layer 120 in 110) length is identical, can also differ.In an embodiment of the present invention, second
The length of wiring layer 120 is equal to the parallel blocks length of its first wiring layer 110 in parallel.In an alternative embodiment of the invention,
The length of wiring layer 120 is less than the parallel blocks length of its wiring layer 110 in parallel.Certainly, the application not limited to this, wiring layer
120 length can also be more than the length of the parallel blocks of its first wiring layer 110 in parallel.
Because the second wiring layer 120 is in parallel with a section of the first wiring layer 110, the all-in resistance of fan-out line is the first cloth
Line layer 110 removes the resistance of parallel blocks, and the first wiring layer 110 and the parallel resistance sum of the second wiring layer 120, and the impedance is small
The resistance of first wiring layer 110 when not the second wiring layer 120 in parallel, therefore, the impedance of fan-out line can be reduced, and it hinders
The size of anti-reduction by the second wiring layer 120 resistivity and length, and the resistivity of the first wiring layer 110 and first wiring
Carry out section length in parallel to determine with the second wiring layer 120 in layer 110.In the second wiring layer 120 of each fan-out line and
In the case of the resistivity identical of one wiring layer 110, especially by the length of the second wiring layer 120 and the first wiring layer 100 and second
Wiring layer 120 carries out the influence of the length of the section of parallel connection.
Second wiring layer 120 can be one, such as the second wiring layer 120 on fan-out line 100-1 and 100-4, second
Wiring layer 120 can also be multiple, for example, being provided with two the second wiring layers on fan-out line 100-2 and 100-5, certainly, also may be used
To be three, four etc..It is all in Fanout line structure 20 to be provided with the fan-out line 100 of the second wiring layer 120, the second wiring layer
120 can all be one, can also all be multiple, or, there is second wiring layer 120 on the fan-out line of part, be partly fanned out to
There are multiple second wiring layers 120 on line.According to the resistance of the first wiring layer 110 of every fan-out line 100, it may be determined that every fan
The length of second wiring layer 120 of outlet 100 (in the case of for multiple second wiring layers, refers to multiple second wiring layers
Total length) so that the impedance between 100-1,100-2,100-3,100-4,100-5 is identical or impedance contrast from each other
Value is less than given threshold, namely realize every fan-out line 100 of fan-out structure 20 impedance is identical or impedance contrast from each other
Value is less than given threshold.In one embodiment, in a plurality of fan-out line 100 for being provided with the second wiring layer 120, different length are arranged on
The length of the second wiring layer 120 on first wiring layer 110 of degree is different, so, can adjust the fan-out line of different length
Impedance uniformity between 100.
Preferably, the impedance of a plurality of fan-out line 100 is set to impedance with most short fan-out line basically identical, Ye Jiqi
He adjusts setting by fan-out line on the basis of the impedance of most short fan-out line, makes the impedance basic one of they and most short fan-out line 1004
Cause.Therefore, in one embodiment, the second wiring layer 120 can be not provided with to most short fan-out line 100-3, and for others
Fan-out line 100-1,100-2,100-4,100-5 are respectively provided with the second wiring layer 120, that is to say, that except length most short fan-out line
Outside 100-3, remaining a plurality of fan-out line is provided with second wiring layer 120 in parallel with a section on first wiring layer 110.
Under which, the method for calculating the length of the second wiring layer 120 is as follows：
Assuming that the resistivity of the first wiring layer 110 is ρGResistivity with the second wiring layer is ρS, most short fan-out line 100
Resistance is R1.Include the fan-out line of the second wiring layer 120 to any, the length of its first wiring layer 110 is L0, the second wiring layer
120 length is L, and the length of the first wiring layer 110 and the parallel blocks of the second wiring layer 120 is L, to cause fan-out line electricity
Resistance is consistent with the resistance R1 of most short fan-out line, then：
So as to
From the fan-out line of above formula, distal end, L0 is bigger, then L is bigger, i.e., the second required wiring layer 120 in parallel
Length it is longer.
It should be noted that in other embodiments, the second cloth can also be set in length most short fan-out line 100-3
Line layer 120 is to reduce most short fan-out line 100-3 impedance, so that the impedance of every fan-out line of Fanout line structure 100 is entered
One step unanimously reduces.Now, the second wiring layer 120 is provided with all fan-out lines.
Fig. 3 is is not provided with the sectional view of the fan-out line of the second wiring layer in the Fanout line structure of the embodiment of the present invention, Fig. 4 is
The sectional view of the fan-out line of second wiring layer is provided with Fanout line structure of the embodiment of the present invention.
As shown in figure 3, the fan-out line 100 for being not provided with the second wiring layer 120 includes cloth First Line layer 110, the first insulating barrier
140 and second insulating barrier 150.
As shown in figure 4, being provided with the fan-out line 100 of the second wiring layer 120 includes the first wiring layer 110, the first wiring layer
The second wiring layer 120 on the first insulating barrier 140 on 110, insulating barrier 140, and, second on the second wiring layer 120 is exhausted
Edge layer 150, the first wiring layer 110 and the second wiring layer 120 are electrically connected by conducting film 130, and conducting film 130 can be ITO (oxygen
Change indium tin) the ITO wirings that are made of material, the wiring direction of the first wiring layer 110 and the second wiring layer 120 is essentially identical.
It should be noted that it is clear in order to show in Fig. 4, by the first wiring layer 110 and the tie point of the second wiring layer 120
The distance between be exaggerated, drafting it is distant, the two actual distance can be very close to so that the second wiring layer
120 is consistent with the section length for the first wiring layer 110 that it is electrically connected.
In other embodiments of the present invention, one the 3rd wiring layer, the 3rd wiring layer and the first wiring layer 110 can be set
It is in parallel with the second wiring layer 120, so as to further reduce the resistance of fan-out line.3rd wiring layer can also be located at the first wiring
The lower section of layer 110, is electrically connected with the first wiring layer 110, and there is an insulating barrier between the first wiring layer 110, or, positioned at the
On two wiring layers, and in the presence of an insulating barrier between the second wiring layer.The length of 3rd wiring layer can be set as needed, be made
The impedance for obtaining each fan-out line is identical.
In the embodiment of the present invention, reach that reduction is fanned out to by partial sector one second wiring layer in parallel in the first wiring layer
The purpose of line impedence, and make it that the impedance of each fan-out line is identical by the length for adjusting the second wiring layer, so as to realize fan-out line
Impedance uniformity, therefore, during using Fanout line structure formation display panel, its display effect can be improved.In addition,
When in another transport layer that the second wiring layer is arranged on the first wiring layer, fan-out line occupied area is not increased, the fan-out line
The fan-out line of structure need not additionally increase the width of the fanout area needed for Fanout line structure, be highly suitable to be applied for narrow frame and show
Show in device.
The embodiment of the present invention also provides a kind of display panel, including drive circuit module and thin film transistor (TFT) array, and
Above-mentioned Fanout line structure, the Fanout line structure is used to connect the drive circuit module and the thin film transistor (TFT) array.
The embodiment of the present invention also provides a kind of manufacture method of display panel, including：
The substrate for being preset with fanout area is provided；
The first conductive layer is formed by depositing in the default fanout area, first is obtained in first Conductive Layer Etch
Wiring layer 110；
The first insulating barrier 140 is covered in first conductive layer surface；
The second conductive layer is formed by depositing in first surface of insulating layer, the is obtained in second Conductive Layer Etch
Two wiring layers 120；
The second insulating barrier 150 is covered in second conductive layer surface；
And, the two ends position of second wiring layer 120 is performed etching on second insulating barrier 150, shape
Into the second exposed portion 160 of second wiring layer, need to be electrically connected with second wiring layer in first wiring layer
The position connect is performed etching, and forms the first exposed portion 170 of first wiring layer, exposed in need to electrically connect described first
Conducting film 130 is covered between portion 170 and the second exposed portion 160.With reference to Fig. 4.Performed etching on the second insulating barrier 150,
Come so that a part for the second wiring layer 120 is exposed, i.e., exposed portion 160-1,160-2, carried out in the position for needing to electrically connect
Etching a so that part for the first wiring layer 110, which is exposed, to be come, i.e., exposed portion 170-1,170-2, in the position for needing to electrically connect
Conducting film 130 is covered, specifically, conducting film 130 is covered between exposed portion 160-1 and exposed portion 170-1, in exposed portion 160-
Conducting film 130 is covered between 2 and exposed portion 170-2.Wherein, conducting film 130 can ITO (tin indium oxide) material be made
ITO is connected up.
Although disclosed herein embodiment as above, described content be only readily appreciate the present invention and use
Embodiment, is not limited to the present invention.Technical staff in any art of the present invention, is taken off not departing from the present invention
On the premise of the spirit and scope of dew, any modification and change, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of Fanout line structure, it is characterised in that including：
The fan-out line that a plurality of length differs；
Every fan-out line includes the first wiring layer, and at least partly described fan-out line includes the second wiring layer, and described second
Include an insulating barrier between wiring layer and first wiring layer, the two ends of second wiring layer are electrically connected in described the
The diverse location of one wiring layer；
The impedance of a plurality of fan-out line is identical.
2. Fanout line structure as claimed in claim 1, it is characterised in that in a plurality of fan-out line, except length is most short by
Outside the corresponding fan-out line of one wiring layer, remaining fan-out line includes the second wiring layer.
3. Fanout line structure as claimed in claim 1, it is characterised in that in a plurality of fan-out line, every fan-out line is wrapped
Include the second wiring layer.
4. Fanout line structure as claimed in claim 1, it is characterised in that at least part fan-out line includes the second cloth
Line layer refers to：At least partly described fan-out line includes one or more second wiring layers, and the two ends difference of each second wiring layer
It is electrically connected to the diverse location of first wiring layer.
5. Fanout line structure as claimed in claim 4, it is characterised in that the first wiring layer of different length, is connected electrically
All second wiring layers total length it is different.
6. Fanout line structure as claimed in claim 1, it is characterised in that second wiring layer is located at the described of its electrical connection
The surface of first wiring layer.
7. Fanout line structure as claimed in claim 1, it is characterised in that one end of second wiring layer is connected to described
The first position of one wiring layer, the other end of second wiring layer is connected to the second place of first wiring layer, and institute
The length for stating the second wiring layer is equal to length of the first position to the second place described in first wiring layer.
8. Fanout line structure as claimed in claim 1, it is characterised in that one end of second wiring layer is connected to described
The first position of one wiring layer, the other end of second wiring layer is connected to the second place of first wiring layer, and institute
The length for stating the second wiring layer is less than length of the first position to the second place described in first wiring layer.
9. a kind of display panel, it is characterised in that including drive circuit module and thin film transistor (TFT) array, and such as claim
1 to 8 any described Fanout line structure, the Fanout line structure is used to connect the drive circuit module and the film crystal
Pipe array.
10. a kind of manufacture method of display panel, it is characterised in that including：
The substrate for being preset with fanout area is provided；
The first conductive layer is formed by depositing in the default fanout area, obtaining first in first Conductive Layer Etch connects up
Layer；
The first insulating barrier is covered in first conductive layer surface；
The second conductive layer is formed by depositing in first surface of insulating layer, the second cloth is obtained in second Conductive Layer Etch
Line layer；
The second insulating barrier is covered in second conductive layer surface；
And, the two ends position of second wiring layer is performed etching on second insulating barrier, forms described second
Second exposed portion of wiring layer, needs the position being electrically connected with second wiring layer to be carved in first wiring layer
Erosion, forms the first exposed portion of first wiring layer, in the described first exposed portion for needing to electrically connect and described second exposed
Conducting film is covered between portion.
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| CN108649039A (en) * | 2018-06-01 | 2018-10-12 | 深圳市华星光电技术有限公司 | Array substrate, display panel and display device |
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Application publication date: 20170818 |