CN107065058A - Thin-film material as Terahertz and infrared light polarization modulation and preparation method thereof - Google Patents
Thin-film material as Terahertz and infrared light polarization modulation and preparation method thereof Download PDFInfo
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- CN107065058A CN107065058A CN201710266022.6A CN201710266022A CN107065058A CN 107065058 A CN107065058 A CN 107065058A CN 201710266022 A CN201710266022 A CN 201710266022A CN 107065058 A CN107065058 A CN 107065058A
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- nano
- antimony
- terahertz
- thin
- erbium
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- 239000000463 material Substances 0.000 title claims abstract description 41
- 230000010287 polarization Effects 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000002070 nanowire Substances 0.000 claims abstract description 31
- ZWYQVOZZNFTGDE-UHFFFAOYSA-N antimony erbium Chemical compound [Sb].[Er] ZWYQVOZZNFTGDE-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000002131 composite material Substances 0.000 abstract description 4
- 229910005542 GaSb Inorganic materials 0.000 description 21
- 230000000694 effects Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000002114 nanocomposite Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002872 contrast media Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229940125730 polarisation modulator Drugs 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
Abstract
The invention discloses a kind of thin-film material as Terahertz and infrared light polarization modulation and preparation method thereof.The thin-film material is specially：The nano-wire array of embedded antimony erbium in the matrix of gallium antimonide, the direction of nano-wire array is vertical or parallel with stromal surface, and when the volume by volume concentration of antimony erbium is 10%, the direction of nano-wire array is perpendicular to stromal surface；When the volume by volume concentration of antimony erbium is 15 25%, nano-wire array is oriented parallel to stromal surface, the method that the present invention passes through molecular beam epitaxy, obtain the composite of the embedded nano thread structure with semimetal property in a semiconductor material, this material can be used as the Terahertz and infrared polarizer of wideband, and can be carried out with the Terahertz based on III-V group semi-conductor material and infrared electro device integrated.
Description
Technical field
The present invention relates to it is a kind of can as polarization of electromagnetic wave device thin-film material, in particular, it is related to one kind can
Terahertz and the nano composite film and preparation method thereof of infrared waves Polarization Modulation for wafer size.
Background technology
Available Terahertz polarizer is largely all made of metal gate in the market.Because being by machinery
The method of processing is made, and the least limit of metal gate spacing is 10 microns, in terahertz wave band (for example, more than 3THz's
Electromagnetic wave) because wavelength ratio metal gate spacing is ten times greater, therefore substantially reduce polarization extinction ratio.Scientific research personnel is generally with thin
Film is deposited and the method for lithography process manufactures the infrared polarizer with high frequency Terahertz, and the requirement to transparent substrates is often limited
Its application in several Terahertzs to 20THz wave bands.
Because the small size of low-dimensional materials can produce special physical property, nanometer technology is widely used in today.
In terms of the electrical and optical properties of designing material, growth, size and the geometry for being accurately controlled low-dimensional materials are to close very much
One step of key.The synthetically produced method of many low dimensional structures needs template or catalyst.By the method for molecular beam epitaxy, I
Can regulate and control rare earth element it is formed nanostructured in semi-conducting material matrix to obtain continuous semimetal/semiconductor multiple
Condensation material.The metal Nano structure of embedded monocrystalline in semiconductor substrate, can be in the feelings without the crystal mass for destroying matrix
The effectively property of controlled material under condition, so that meeting material is applying upper demand.At present, ErAs nano particles are wide
General research, the combination of itself and III-As semiconductors, in Terahertz photomixer, Schottky diode, composite enhanced n-
The enhancing of tunneling effect and high efficiency thermoelectric materials quality factor carries in ErAs-p diodes, high-efficiency multi-junction solar cell
The application of high aspect has very high potentiality.
From the point of view of in terms of a lot, ErSb:GaSb is optimal semimetal-semiconductor system.ErSb and GaSb lattice
Mismatch is 0.2% (ErAs:GaAs systems are that 1.53%), and ErSb/GaSb band arrangement is more suitable for P-type semiconductor material
The application of material.But, this material is not fully developed also so far.
The content of the invention
It is an object of the invention to provide a kind of thin-film material with polarization modulation capabilities, this material is applied to wideband
The modulation of Terahertz and infrared light polarization, and can be carried out with the photoelectric device based on III-V group semi-conductor material integrated.This
Another purpose of invention is to provide the preparation method of the nano composite film.
The technical solution adopted by the present invention is as follows：
Thin-film material as Terahertz and infrared light polarization modulation, it is characterised in that embedded in the matrix of gallium antimonide
The nano-wire array of antimony erbium, the direction of nano-wire array is vertical or parallel with stromal surface, when the volume ratio of antimony erbium is dense
Spend for 10% when, the direction of nano-wire array is perpendicular to stromal surface；When the volume by volume concentration of antimony erbium is 15-25%, receive
Nanowire arrays are oriented parallel to stromal surface.
The antimony erbium nano wire is monocrystalline and has semimetal property, a diameter of 5-7 nanometers, the spacing between nano wire
For 10-20 nanometers.
The preparation method of thin-film material of the present invention as Terahertz and infrared light polarization modulation, specific steps include：
(1) GaAs or antimony arsenide substrate of (100) crystal face are provided；
(2) surface de-oxidation processing is first passed through over the substrate, then passes through the method for molecular beam epitaxy, growth buffering
Layer；
(3) on the cushion, the method being co-deposited using molecular beam epitaxy grows the gallium antimonide of Er ions, obtains
The thin-film material of antimony erbium nano-wire array is embedded with gallium antimonide matrix；Wherein, growth temperature is 530 DEG C, and growth rate is
Between 0.1 μm/hr to 1 μm/hr.
The invention provides a kind of new nano composite film, have the advantage that：
(1) spacing of the semimetal nano wire prepared is in nanometer scale, and the thickness of whole material can be in nanometer to micro-
Adjusted between rice, have polarization effect to 0.2THz to 100THz electromagnetic wave.
(2) because the nano composite film of the present invention is based on the commonly used Group III-V semiconductor of photoelectric device
On, therefore made polarizer can be integrated with THz devices or infrared electro device well, including quanta cascade swashs
Light device and vertical cavity surface surface emitting laser etc..
(3) using the preparation method of the present invention, by improving the continuity and arrangement degree of nano wire, polarization extinction ratio can be more
One step is improved.It can also be extended to other rear-earth-doped III-V materials simultaneously.
(4) because surface plasma body resonant vibration, semimetal nanostructured such as nano dot, nanorod and nanowire can be very strong
Infrared waves absorb strongly in.The characteristics of this is similar to conductor synthetic material can be using on the solar cell, to improve light
Absorptivity.This synthetic material, can also prepare infrared plasma-based device after appropriate design as Meta Materials.
Brief description of the drawings
Fig. 1 is the operation principle schematic diagram that polarizer is made in nano composite film of the present invention.
Fig. 2 is ErSb:The schematic cross-section of GaSb multilayer materials, substrate is GaAs, and (a) is ErSb volume by volume concentration mark
Know figure, from bottom to up, ErSb concentration is constantly raised；(b)ErSb:The TEM figures of GaSb multilayer materials, (c) and (d) is each layer
TEM image in two groups of vertical crystal orientation.
Fig. 3 is transmittance test result of the ErSb nano wires to different polarization light of horizontal growth in illustration, comprising parallel
Nano wire direction and the test in vertical nano-wire direction.The test data of GaSb contrast materials is equally also provided (bottom black line).
It can be seen that in 0.7THz to 70THz, the material has very strong polarization effect.
Embodiment
The present invention will be further described in detail with specific embodiment below in conjunction with the accompanying drawings.
The invention provides a kind of method for controllable growth by molecular beam epitaxy, self-assembled growth is not in GaSb matrix
With ErSb nanostructureds.Specific preparation method is as follows：
By solid-state source molecular beam epitaxy in (100) crystal face gallium arsenide substrate of selection, pass through the side of thermal evaporation first
Method removes surface oxide layer, and the thick GaAs buffer layers of one layer of 200nm are grown at 580 DEG C so that epitaxial surface is smooth, afterwards
Growth temperature is set to 530 DEG C, gallium antimonide stress release layer thick one layer of 60nm of growth.The present embodiment devises a multilayer knot
The ErSb of structure:GaSb samples, pass through the ErSb to different levels of doping:The GaSb layers of growth machine that is characterized with Knowing material
System, and demonstrate and can regulate and control the formation of different ErSb nanostructureds by the incorporation for adjusting ErSb.Each layer of ErSb:
GaSb is grown by way of co-deposition, i.e., Er, Ga and Sb baffle plate are opened and grown simultaneously.
Sandwich construction manufactured in the present embodiment is as shown in Fig. 2 the ErSb of 5 layers of difference Er doping concentrations:GaSb structure
(ErSb volume by volume concentration is respectively 1%, 3%, 7% and 20%), between every layer one layer of growth undoped with GaSb, with to boundary
Face is distinguished by.Section TEM schemes as shown in Figure 2 b, to show the different nanostructureds formed under different ErSb concentration.Two hang down
Nogata is to the nanostructured enlarged drawing of ([110] and [- 110]) as shown in Fig. 2 c and Fig. 2 d.The situation for being 1% in Er concentration
Under, solubility limit has been reached, therefore Er and Sb form nano particle (ErSb nethermost as shown in Figure 2:GaSb
Layer).Improved with Er concentration, the density and size of nano particle are being improved, form short distance arrangement (reciprocal the in such as Fig. 2
Two layers of ErSb:GaSb layers).
When Er concentration reaches 7% or so, ErSb clusters align along direction of growth adjust automatically, form longer bar-shaped
Structure (such as Fig. 2 centres ErSb:Shown in GaSb layers).When Er concentration reaches 10% or so, club shaped structure starts along growth
Direction forms continuous nano wire (such as Fig. 2 second layer ErSb under upper:Shown in GaSb layers).When Er concentration reaches 20%
During left and right, the orientation of nano wire have rotated 90 degree, and (such as Fig. 2 is under upper along level [- 110] direction for the direction of nano wire
One layer of ErSb:Shown in GaSb), this nano wire THz wave incident to surface has strong polarization effect.When Er concentration
When reaching 20%, total does not find obvious defect, shows that material possesses good crystal mass.It there is no indication that
The growth of last layer and the formation of nanostructured are influenceed by next layer, and showing on this composite can further extension be such as
Integrated opto-electronic device structure etc..
ErSb 2 microns thick to the nano thread structure with ErSb horizontal directions:GaSb nano composite films enter
Row light transmittance is measured, using GaSb materials as contrast.When light polarization direction is parallel to nano wire, light of the material to 100THz or so
There is obvious absorption；And when light polarization direction is perpendicular to nano wire, material has very strong suction to 0.2THz to 100THz light
Receive, transmissivity substantially reduces (as shown in Figure 3), so as to obtain polarization effect.
Therefore, the ErSb of this nano thread structure with ErSb horizontal directions:GaSb nano composite films are demonstrate,proved
There is very strong polarization effect in fact, and cover very wide frequency range (0.2THz to 100THz), can act as wideband
The light polarization modulator of Terahertz and infrared light.And it is expected to combine with similar Group III-V semiconductor photoelectric device, example
Such as it is operated in the QCL of Terahertz or infrared band.
The high-sequential arrangement of nano wire and electrical conductance cause the ErSb of the present invention:This composites of GaSb can with it is red
The outer electromagnetic wave strong effect for arriving terahertz wave band, although the thickness of this material only has 100nm to 2 microns, than related light
Several small orders of magnitude of wavelength.By the continuity and arrangement degree, the thin-film material of this structure that further improve nano wire
Higher polarization extinction ratio can be reached.
Claims (3)
1. the thin-film material as Terahertz and infrared light polarization modulation, it is characterised in that the embedded antimony in the matrix of gallium antimonide
Change the nano-wire array of erbium, the direction of nano-wire array is vertical or parallel with stromal surface, when the volume by volume concentration of antimony erbium
For 10% when, the direction of nano-wire array is perpendicular to stromal surface；When the volume by volume concentration of antimony erbium is 15-25%, nanometer
Linear array is oriented parallel to stromal surface.
2. the thin-film material according to claim 1 as Terahertz and infrared light polarization modulation, it is characterised in that described
Antimony erbium nano wire is monocrystalline and has semimetal property, a diameter of 5-7 nanometers, and the spacing between nano wire is 10-20 nanometers.
3. the preparation method of the thin-film material as claimed in claim 1 as Terahertz and infrared light polarization modulation, its feature exists
In specific steps include：
(1) GaAs or antimony arsenide substrate of (100) crystal face are provided；
(2) surface de-oxidation processing is first passed through over the substrate, then passes through the method for molecular beam epitaxy, grown buffer layer；
(3) on the cushion, the method being co-deposited using molecular beam epitaxy grows the gallium antimonide of Er ions, obtains in antimony
The thin-film material of antimony erbium nano-wire array is embedded with gallium matrix；Wherein, growth temperature is 530 DEG C, and growth rate is 0.1 μ
Between m/hr to 1 μm/hr.
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| CN201710266022.6A CN107065058B (en) | 2017-04-21 | 2017-04-21 | Thin-film material and preparation method thereof as Terahertz and infrared light polarization modulation |
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| CN201710266022.6A CN107065058B (en) | 2017-04-21 | 2017-04-21 | Thin-film material and preparation method thereof as Terahertz and infrared light polarization modulation |
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| CN107065058B CN107065058B (en) | 2019-03-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979996A (en) * | 2019-03-27 | 2019-07-05 | 南京大学 | A kind of semimetal/semiconductor Schottky knot and preparation method thereof and Schottky diode |
| CN111830616A (en) * | 2019-04-16 | 2020-10-27 | 致晶科技（北京）有限公司 | Achromatic phase retarder made of crystal and manufacturing method |
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| CN101876722A (en) * | 2009-04-28 | 2010-11-03 | 住友化学株式会社 | Wire-grid polarizer |
| CN101923185A (en) * | 2010-08-17 | 2010-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz wave quasi-optics polaroid sheet and preparation method thereof |
| KR20150033927A (en) * | 2013-09-25 | 2015-04-02 | 엘지디스플레이 주식회사 | Polarizing sheet with quantum rod and method of fabricating the same, and liquid crystal display device including the same |
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2017
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| CN101876722A (en) * | 2009-04-28 | 2010-11-03 | 住友化学株式会社 | Wire-grid polarizer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979996A (en) * | 2019-03-27 | 2019-07-05 | 南京大学 | A kind of semimetal/semiconductor Schottky knot and preparation method thereof and Schottky diode |
| CN111830616A (en) * | 2019-04-16 | 2020-10-27 | 致晶科技（北京）有限公司 | Achromatic phase retarder made of crystal and manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN107065058B (en) | 2019-03-22 |
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