CN107056276A - Bismuth ferrite based dielectric film for high density energy storage and its preparation method and application - Google Patents
Bismuth ferrite based dielectric film for high density energy storage and its preparation method and application Download PDFInfo
- Publication number
- CN107056276A CN107056276A CN201710193321.1A CN201710193321A CN107056276A CN 107056276 A CN107056276 A CN 107056276A CN 201710193321 A CN201710193321 A CN 201710193321A CN 107056276 A CN107056276 A CN 107056276A
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- Prior art keywords
- bismuth ferrite
- dielectric film
- ferrite based
- energy storage
- ferrous acid
- Prior art date
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 162
- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 159
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 158
- 238000004146 energy storage Methods 0.000 title claims abstract description 120
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims description 78
- 239000002253 acid Substances 0.000 claims description 63
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 62
- -1 bismuthino Chemical group 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 57
- 239000000843 powder Substances 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 30
- 230000007704 transition Effects 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 21
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 20
- 238000004549 pulsed laser deposition Methods 0.000 claims description 20
- 230000036961 partial effect Effects 0.000 claims description 19
- 238000000498 ball milling Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 16
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 11
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 claims description 11
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 3
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 3
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 3
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 125
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 34
- 239000000463 material Substances 0.000 description 14
- 229910052712 strontium Inorganic materials 0.000 description 12
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 11
- 239000010955 niobium Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000005621 ferroelectricity Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 229910002902 BiFeO3 Inorganic materials 0.000 description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 description 4
- 150000001621 bismuth Chemical class 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000012491 analyte Substances 0.000 description 2
- 230000005303 antiferromagnetism Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010020852 Hypertonia Diseases 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- PACGUUNWTMTWCF-UHFFFAOYSA-N [Sr].[La] Chemical compound [Sr].[La] PACGUUNWTMTWCF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- IGPAMRAHTMKVDN-UHFFFAOYSA-N strontium dioxido(dioxo)manganese lanthanum(3+) Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])(=O)=O IGPAMRAHTMKVDN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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Abstract
The invention discloses a kind of for bismuth ferrite based dielectric film of high density energy storage and its preparation method and application, it is characterised in that the thin dielectric film chemical composition formula is (1 x) BiFeO3‑xSrTiO3, wherein, x is molar fraction, and 0<x<1.The thin dielectric film has excellent energy-storage property, and energy storage density is up to 70.3J/cm3, and with 70% high energy storage efficiency.
Description
Technical field
The invention belongs to dielectric substance field, the ferrous acid bismuthino of high density energy storage specifically, the present invention relates to
Thin dielectric film and its preparation method and application.
Background technology
Dielectric capacitor is close with the power of its quick charge/discharge rates and superelevation as main passive storage device
Degree, is widely used in electronic circuit, it is possible to achieve the work(such as separated by direct communication, coupling, bypass, filtering, resonant tank, energy conversion
Energy.But its relatively low energy storage density turns into the bottleneck that it further develops and applied.Commercialized dielectric substance storage at present
Can density only about 2J/cm3, one or two low order of magnitude compared with electrochemical capacitor or battery.Therefore, exploring has high storage
The dielectric substance of energy density is always the area research focus.
Ceramic membrane dielectric has big dielectric constant and high disruptive field intensity, close as being most hopeful to obtain high energy storage
The dielectric substance system of degree, simultaneously because its small volume, good mechanical property, resistance to elevated temperatures are excellent, is expected in devices small
Applied under change, integrated and extreme condition.Had been carried out at present in major class lead zirconate titanate (PZT) base film dielectric
30~60J/cm3High energy storage density.It is wherein representative as：Zhongqiang Hu etc. utilize chemical deposition legal system
Standby Pb0.96La0.04Zr0.98Ti0.02O3It is anti-ferroelectric thin film used that there is 61J/cm3Energy storage density, and in room temperature to 225 degrees Celsius of models
Enclose interior retention property stable；Guangliang Hu etc. are prepared using pulse laser sediment method
Pb0.92La0.08Zr0.52Ti0.48O3Relaxor ferroelectric film can then realize 31J/cm3Energy storage density, it is and Celsius to 180 in room temperature
Retention property is stable in the range of degree.But the lead contained in these materials has larger harm to health and environment, after discarding
It is not disposable.Therefore, exploitation is with the unleaded of big dielectric constant, high breakdown field strength, high energy storage density and good temperature stability
Thin film dielectric material turns into the current urgent task in the field.
The content of the invention
It is contemplated that at least solving one of technical problem in correlation technique to a certain extent.Therefore, the present invention
One purpose is that proposition is a kind of for bismuth ferrite based dielectric film of high density energy storage and its preparation method and application.The electricity
Dielectric film has excellent energy-storage property, and energy storage density is up to 70.3J/cm3, and with 70% high energy storage efficiency.
In one aspect of the invention, to propose a kind of bismuth ferrite based dielectric for high density energy storage thin by the present invention
Film, embodiments in accordance with the present invention, the thin dielectric film chemical composition formula is (1-x) BiFeO3-xSrTiO3, wherein, x is
Molar fraction, and 0<x<1.
Inventor's discovery, bismuth ferrite (BiFeO3) belong to one kind of multi-iron material, with ferroelectricity and anti-ferromagnetism, and companion
With weak ferromagnetism, its ferroelectricity is due to that Bi ions have caused by lone pair electrons, and its iron electric polarization is higher than in theory
100uC/cm2, but it is difficult to prepare pure bismuth ferrite to be due to, wherein there is secondary phase and various defects, causes to be difficult to measure
Its real iron electric polarization, the iron electric polarization generally measured in bismuth ferrite ceramics only has several uC/cm2；Strontium titanates (SrTiO3)
It is a kind of widely used electric function ceramic material with typical perovskite structure, is damaged with dielectric constant height, dielectric
The advantages of low, heat endurance is good is consumed, is widely used in electronics, machinery and ceramic industry.Thus, both are formed into solid solution (1-
x)BiFeO3-xSrTiO3(x is molar fraction, 0<x<1), by regulating and controlling x value, resulting thin dielectric film has excellent
Ferroelectric properties and insulating property (properties), its disruptive field intensity is up to 3~4MV/cm, and energy storage density is up to 70.3J/cm3, and with 70%
High energy storage efficiency.Experiment proves that this bismuth ferrite based dielectric film has larger dielectric constant, less dielectric concurrently and damaged simultaneously
Consumption, higher disruptive field intensity and excellent energy-storage property, are that one kind is hopeful to be applied to embedded capacitor, electrostatic energy storage member device
The material in the fields such as part, Pulse Power Techniques.
In addition, the bismuth ferrite based dielectric film according to the above embodiment of the present invention for high density energy storage can also have
There are following supplementary features：
In some embodiments of the invention, the thickness of the bismuth ferrite based dielectric film for high density energy storage is
150nm-2μm.Thus, the growth quality for improving thin dielectric film, the energy-storage property for improving thin dielectric film are conducive to.
In some embodiments of the invention, the bismuth ferrite based dielectric film for high density energy storage enters at Fe
Row is transition element doped.Thus, the insulating property (properties) of film can be improved, the energy-storage property of thin dielectric film is further improved.
In some embodiments of the invention, the doping of the transition elements is 0.1wt%-2.0wt%.Thus, may be used
That further improves thin dielectric film punctures property and energy-storage property.
In another invention of the present invention, the present invention, which is proposed, a kind of prepares the above-mentioned ferrous acid bismuthino for high density energy storage
The method of thin dielectric film, embodiments in accordance with the present invention, methods described includes：
(1) by Bi2O3、Fe2O3、SrCO3、TiO2Mix is carried out with transition elements oxide of mutually MeO, to obtain ferrous acid
Bismuthino raw material；
(2) the bismuth ferrite based raw material and organic solvent are subjected to ball milling, drying and screening process successively, to obtain iron
Sour bismuthino powder；
(3) the bismuth ferrite based powders are subjected to preheating, to obtain bismuth ferrite based ceramic powder body；
(4) the bismuth ferrite based ceramic powder body and adhesive are granulated and compressing tablet process, to obtain ferrous acid bismuthino
Ceramic disks；
(5) the ferrous acid bismuthino ceramic disks are carried out burying burning processing, to obtain ferrous acid bismuthino ceramic target；
(6) the ferrous acid bismuthino ceramic target is subjected to pulsed laser deposition processing and annealing, to be used for
The bismuth ferrite based dielectric film of high density energy storage.
Preparation according to embodiments of the present invention is used for the method for the bismuth ferrite based dielectric film of high density energy storage by inciting somebody to action
Bi2O3、Fe2O3、SrCO3、TiO2With transition elements oxide of mutually MeO be mixed with obtaining bismuth ferrite based raw material, transition elements
Doping can reduce bismuth ferrite based dielectric film leakage lead；By the way that bismuth ferrite based powders are carried out into preheating, can produce one is
The physical-chemical reaction of row, can improve the composition and its institutional framework of bismuth ferrite based powders, improve the performance of bismuth ferrite based powders；
The characteristics of bismuth ferrite based dielectric film for high density energy storage obtained by this method be leadless environment-friendly, high-voltage resistance capability it is strong,
With excellent energy-storage property.Bismuth ferrite has very strong ferroelectricity, and its spontaneous polarization strength is up to 100 μ C/cm2, it is leaded
The excellent substitute of ferroelectric material.Strontium titanates is tendency Ferroelectric body, is paraelectric phase under normal temperature, with dielectric loss is low, electric leakage
The characteristics of flowing small.Both are formed into solid solution (1-x) BiFeO3-xSrTiO3(x is molar fraction, 0<x<1), by regulating and controlling x's
Value, and appropriate preparation method and parameter are used, the disruptive field intensity of the thin dielectric film of preparation is up to 3~4MV/cm, and energy storage is close
Degree is up to 70.3J/cm3, and with 70% high energy storage efficiency.Experiment proves that this bismuth ferrite based dielectric film has concurrently simultaneously
Larger dielectric constant, less dielectric loss, higher disruptive field intensity and excellent energy-storage property, is that one kind is hopeful application
Material in fields such as embedded capacitor, electrostatic energy storage component, Pulse Power Techniques.
In addition, the side according to the above embodiment of the present invention for preparing the bismuth ferrite based dielectric film for high density energy storage
Method can also have following supplementary features：
In some embodiments of the invention, in step (1), Me in the transition elements oxide of mutually be selected from Mn,
At least one of Sc, Cr, Ni, Nb.Thus, be conducive to improving the growth quality and insulation energy of bismuth ferrite based dielectric film
Power, is conducive to improving energy-storage property.
In some embodiments of the invention, in step (1), the composition of the bismuth ferrite based raw material is (1-x)
Bi1.1Fe(1-y)MeyO3xSrTiO3, wherein, 0<x<1,0.001<y<0.02.Thus, it can further improve bismuth ferrite based dielectric
The energy-storage property of film.
In some embodiments of the invention, in step (2), the organic solvent is selected from absolute ethyl alcohol, propyl alcohol, different
At least one of propyl alcohol and ethylene glycol.Thus, be conducive to obtaining bismuth ferrite based powders.In some embodiments of the invention,
In step (2), the time of the ball-milling treatment is 11-13 hours.Thus, be conducive to obtaining bismuth ferrite based powders.
In some embodiments of the invention, in step (2), the particle diameter of the bismuth ferrite based powders is 100-500nm.
Thus, be conducive to obtaining bismuth ferrite based powders.
In some embodiments of the invention, in step (3), the temperature of the preheating is 750-800 degrees Celsius,
Time is 3.5-4.5 hours.Thus, be conducive to obtaining bismuth ferrite based ceramic powder body.
In some embodiments of the invention, in step (4), described adhesive be selected from polyvinyl alcohol, polyvinyl alcohol,
At least one of polyethylene glycol, tetraethyl orthosilicate and hydroxypropyl methyl cellulose.Thus, be conducive to obtaining ferrous acid bismuth-based ceramics
Disk.
In some embodiments of the invention, in step (4), the pressure of the compressing tablet process is 10-14MPa.Thus,
Be conducive to obtaining ferrous acid bismuthino ceramic disks.
In some embodiments of the invention, in step (4), a diameter of 0.8- of the ferrous acid bismuthino ceramic disks
1.2 inches, thickness is 3-6mm.Thus, be conducive to obtaining ferrous acid bismuthino ceramic disks.
In some embodiments of the invention, in step (5), the temperature for burying burning processing is Celsius for 1050-1150
Degree, the time is 35-45 minutes.Thus, be conducive to obtaining ferrous acid bismuthino ceramic target.
In some embodiments of the invention, in step (6), the parameter of the pulsed laser deposition processing is：Reaction
Cavity background vacuum is not higher than 5 × 10-6Mbar, base reservoir temperature is 700-800 degrees Celsius during deposition, and cavity partial pressure of oxygen is 1-
5Pa, it is 1-10sccm to lead to oxygen flow, and laser energy is 1-2.5J/cm2.Thus, it can further improve bismuth ferrite based dielectric
The energy-storage property of film.
In some embodiments of the invention, in step (6), the temperature of the annealing is 450-550 degrees Celsius,
Partial pressure of oxygen is 200-800mbar, and the time of annealing is 25-35min.Thus, it can further improve bismuth ferrite based dielectric
The energy-storage property of film.
In an additional aspect of the present invention, the present invention proposes a kind of energy storage device, and the energy storage device includes above-mentioned use
It is used for the bismuth ferrite based dielectric of high density energy storage in the bismuth ferrite based dielectric film of high density energy storage or the above-mentioned preparation of use
The bismuth ferrite based dielectric film for high density energy storage that the method for film is obtained.Thus, it is remarkably improved energy storage device
Energy-storage property.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the side according to an embodiment of the invention for preparing the bismuth ferrite based dielectric film for high density energy storage
Method schematic flow sheet；
Fig. 2 is the structure and test schematic diagram of embodiment 1-6 bismuth ferrite based dielectric films；
Fig. 3 is the profile scanning electron microscope of the gained bismuth ferrite based dielectric film of embodiment 1；
Fig. 4 is the dielectric constant and dielectric loss spectrogram of the bismuth ferrite based dielectric film prepared in embodiment 1-3；
Fig. 5 is the disruptive field intensity distribution spectrogram of the bismuth ferrite based dielectric film prepared in embodiment 1-3；
Fig. 6 is the energy storage density spectrogram of the bismuth ferrite based dielectric film prepared in embodiment 1-3；
Fig. 7 is the ferroelectric hysteresis loop spectrogram of the bismuth ferrite based dielectric film prepared in embodiment 3.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and be not considered as limiting the invention.
In one aspect of the invention, to propose a kind of bismuth ferrite based dielectric for high density energy storage thin by the present invention
Film, embodiments in accordance with the present invention, above-mentioned thin dielectric film chemical composition formula is (1-x) BiFeO3-xSrTiO3, wherein, x is
Molar fraction, and 0<x<1.
Inventor's discovery, bismuth ferrite (BiFeO3) belong to one kind of multi-iron material, with ferroelectricity and anti-ferromagnetism, and companion
With weak ferromagnetism, its ferroelectricity is due to that Bi ions have caused by lone pair electrons, and its iron electric polarization is higher than in theory
100uC/cm2, but it is difficult to prepare pure bismuth ferrite to be due to, wherein there is secondary phase and various defects, causes to be difficult to measure
Its real iron electric polarization, the iron electric polarization generally measured in bismuth ferrite ceramics only has several uC/cm2.Strontium titanates (SrTiO3)
It is a kind of widely used electric function ceramic material with typical perovskite structure, is damaged with dielectric constant height, dielectric
The advantages of low, heat endurance is good is consumed, is widely used in electronics, machinery and ceramic industry.Thus, both are formed into solid solution (1-
x)BiFeO3-xSrTiO3(x is molar fraction, 0<x<1), by regulating and controlling x value, the disruptive field intensity of resulting thin dielectric film
Up to 3~4MV/cm, energy storage density is up to 70.3J/cm3, and with 70% high energy storage efficiency.Experiment proves this bismuth ferrite
Based dielectric film has larger dielectric constant, less dielectric loss, higher disruptive field intensity and excellent energy storage concurrently simultaneously
Performance, is a kind of material for being hopeful to be applied to the fields such as embedded capacitor, electrostatic energy storage component, Pulse Power Techniques.
According to one embodiment of present invention, for high density energy storage bismuth ferrite based dielectric film thickness not by
Especially limitation, those skilled in the art can be selected according to actual needs, according to the specific embodiment of the present invention, be used
In high density energy storage bismuth ferrite based dielectric film thickness can be 150nm-2 μm.Inventor has found, if ferrous acid bismuthino is electric
The thickness of dielectric film is too low, then the insulating properties of bismuth ferrite based dielectric film is deteriorated, and is unfavorable for puncturing and is carried with energy-storage property
Rise；And if the thickness of bismuth ferrite based dielectric film is too high, being unfavorable for the miniaturization application of energy storage device.Thus, using this
Apply for that the thickness of the bismuth ferrite based dielectric film proposed is remarkably improved the insulating properties of bismuth ferrite based dielectric film, have simultaneously
Beneficial to the miniaturization application of energy storage device.
According to still a further embodiment, the bismuth ferrite based dielectric film for high density energy storage is in Fe progress
It is transition element doped.Specifically, in bismuth ferrite sill, Fe easily occurs for Fe elements3+→Fe2+Transformation and produce a large amount of oxygen
Room, causes material leakage current to increase.By transition element doped in Fe progress, the transformation of Fe elements can be suppressed, lifted
The insulating property (properties) of bismuth ferrite based dielectric film, so as to further lift energy-storage property.
According to still another embodiment of the invention, the doping of transition elements is not particularly restricted, people in the art
Member can be selected according to actual needs, and according to the specific embodiment of the present invention, the doping of transition elements can be
0.1wt%-2.0wt%.Inventor has found that, if transition element doped amount is too low, the inhibition to Fe element transformations is not obvious,
It is unfavorable for being lifted the insulating property (properties) of bismuth ferrite based dielectric film.And if transition element doped amount is too high, transition member can be caused
The appearance of plain dephasign, is also unfavorable for being lifted the insulating property (properties) and energy-storage property of bismuth ferrite based dielectric film.Thus, using this Shen
The doping for the transition elements that please be proposed can be obviously improved the insulating property (properties) and energy-storage property of bismuth ferrite based dielectric film.
According to still another embodiment of the invention, the species of doped chemical is not particularly restricted, those skilled in the art
Can be selected according to actual needs, according to the present invention a specific embodiment, doped chemical can be selected from Mn,
At least one of Sc, Cr, Ni, Nb.Inventor has found that the doping of such transition elements can lift bismuth ferrite based dielectric film
Insulating property (properties), so as to significantly improve the energy-storage property of the thin dielectric film.
In another invention of the present invention, the present invention, which is proposed, a kind of prepares the above-mentioned ferrous acid bismuthino for high density energy storage
The method of thin dielectric film, embodiments in accordance with the present invention, with reference to Fig. 1, this method includes：
S100：By BiFeO3With SrTiO3Mix is carried out with transition elements Me
In the step, Bi2O3、Fe2O3、SrCO3、TiO2Mix is carried out with transition elements oxide of mutually MeO, to obtain
Bismuth ferrite based raw material.Thus, Bi can be made2O3、Fe2O3、SrCO3、TiO2It is sufficiently mixed with transition elements oxide of mutually MeO, consolidate
Solution (1-x) BiFeO3-xSrTiO3(x is molar fraction, 0<x<1).Inventor has found that bismuth ferrite has very strong ferroelectricity,
Its spontaneous polarization strength is up to 100 μ C/cm2, it is the excellent substitute of leaded ferroelectric material.Strontium titanates is tendency Ferroelectric body,
It is paraelectric phase under normal temperature, with the characteristics of dielectric loss is low, leakage current is small.Solid solution (1-x) BiFeO of formation3-xSrTiO3(x
For molar fraction, 0<x<1) can be by regulating and controlling x value, and appropriate preparation method and parameter are used, prepare ferrous acid bismuthino
Thin dielectric film, the disruptive field intensity of the thin dielectric film of preparation is up to 3~4MV/cm, and energy storage density is up to 70.3J/cm3, and have
There is a 70% high energy storage efficiency, and transition elements Me doping can reduce the leakage of bismuth ferrite based dielectric film and lead, so as to enter one
Step improves its energy-storage property.
According to one embodiment of present invention, the Me in transition elements oxide of mutually is not particularly restricted, art technology
Personnel can be selected according to actual needs, according to the specific embodiment of the present invention, the Me in transition elements oxide of mutually
Can be selected from least one of Mn, Sc, Cr, Ni, Nb.Inventor has found that such transition elements Me doping can be notable
The film leakage of reduction bismuth ferrite based dielectric is led, so as to further improve the energy-storage property of gained thin dielectric film.
According to still a further embodiment, the composition of bismuth ferrite based raw material is not particularly restricted, art technology
Personnel can be selected according to actual needs, and according to the specific embodiment of the present invention, the composition of bismuth ferrite based raw material can
Think (1-x) Bi1.1Fe(1-y)MeyO3xSrTiO3, wherein, 0<x<1,0.001<y<0.02.Inventor has found, with SrTiO3Ratio
Example increase, the ferroelectric property decrease of bismuth ferrite based dielectric film, polarizability reduction, but insulating properties and disruptive field intensity lifting.
In SrTiO3Ratio be 70% when, the combination property of bismuth ferrite based dielectric film is the most excellent, and disruptive field intensity is reachable
3.85MV/cm, energy storage density is up to 70.3J/cm3, and with 70% high energy storage efficiency.Wherein, Bi elements excessive 10% can
Make up volatilization.
S200：Bismuth ferrite based raw material and organic solvent are subjected to ball milling, drying and screening process successively
In the step, bismuth ferrite based raw material and organic solvent are subjected to ball milling, drying and screening process successively, to obtain
Bismuth ferrite based powders.Thus, the contact area of each composition in bismuth ferrite based raw material can further be increased.
According to one embodiment of present invention, the type of organic solvent is not particularly restricted, those skilled in the art
It can be selected according to actual needs, according to the specific embodiment of the present invention, organic solvent can be selected from anhydrous second
At least one of alcohol, absolute ethyl alcohol, propyl alcohol, isopropanol and ethylene glycol.
According to still a further embodiment, the time of ball-milling treatment is not particularly restricted, those skilled in the art
Member can be selected according to actual needs, and according to the specific embodiment of the present invention, the time of ball-milling treatment can be 11-
13 hours.Inventor has found that, if Ball-milling Time is too short, bismuth ferrite based raw material particle size is excessive, it is difficult to be sufficiently mixed；And if
Ball-milling Time is long, then processing cost is raised, and the particle size of bismuth ferrite based raw material will not continue to reduce.Thus, using this
The ball-milling treatment time that application is proposed is conducive to the mixing of bismuth ferrite based raw material abundant, while reducing processing cost.
According to still another embodiment of the invention, the particle diameter of bismuth ferrite based powders is not particularly restricted, the skill of this area
Art personnel can be selected according to actual needs, according to the specific embodiment of the present invention, the particle diameter of bismuth ferrite based powders
Can be 100-500nm.Inventor has found that, if the particle diameter of bismuth ferrite based powders is too small, its superficial attractive forces is excessive, and shaping is tired
Difficulty, and high processing costs；And if the particle diameter of bismuth ferrite based powders is excessive, each composition can not be sufficiently mixed, and sintering activity is not
It is enough.Thus, the particle diameter proposed using the application can ensure that bismuth ferrite based powders have suitable absorption affinity and sintering activity.
S300：Bismuth ferrite based powders are subjected to preheating
In the step, bismuth ferrite based powders are subjected to preheating, to obtain bismuth ferrite based ceramic powder body.Invention human hair
It is existing, by the way that bismuth ferrite based powders are carried out into preheating, a series of physical-chemical reaction will be produced, volatility is excluded organic
Thing, the crystallization water, analyte etc., and feed particles are densified, the composition and its institutional framework of bismuth ferrite based powders can be improved, subtracted
The volume contraction of few follow-up sintering process, improves the performance of product.
According to one embodiment of present invention, the condition of preheating is not particularly restricted, those skilled in the art
It can be selected according to actual needs, according to the specific embodiment of the present invention, the temperature of preheating can be 750-
780 degrees Celsius, the time can be 3.5-4.5 hours.Inventor's discovery, can not be abundant if burn-in time is too short, temperature is too low
Exclude volatile organic matter, the crystallization water, analyte etc.；And if burn-in time is long, temperature is too high, high processing costs, and can
Side reaction can be produced.Thus, the preheating condition proposed using the application is conducive to fully excluding in bismuth ferrite based powders
Volatile materials and reduction processing cost.
S400：Bismuth ferrite based ceramic powder body and adhesive are granulated and compressing tablet process
In the step, bismuth ferrite based ceramic powder body and adhesive are granulated and compressing tablet process, to obtain bismuth ferrite
Base ceramic disks.Thus, the ferrous acid bismuthino ceramic disks for meeting pulsed laser deposition can be made.
According to one embodiment of present invention, the type of adhesive is not particularly restricted, and those skilled in the art can
To be selected according to actual needs, according to the specific embodiment of the present invention, adhesive can be selected from polyvinyl alcohol, gather
At least one of ethylene glycol, tetraethyl orthosilicate and hydroxypropyl methyl cellulose.
According to still a further embodiment, the pressure of compressing tablet process is not particularly restricted, those skilled in the art
Member can be selected according to actual needs, and according to the specific embodiment of the present invention, the pressure of compressing tablet process can be 10-
14MPa.Inventor has found that, if the hypotony of compressing tablet process, the consistency for the ferrous acid bismuthino ceramic disks suppressed not enough is managed
Think；And if the hypertonia of compressing tablet process, easily cause danger and after release probably due to ferrous acid bismuthino ceramic disks elasticity return
Bounce big generation slabbing.Thus, the pressure of the compressing tablet process proposed using the application is conducive to obtaining the ferrous acid bismuthino of high-quality
Ceramic disks.
According to still another embodiment of the invention, the diameter of ferrous acid bismuthino ceramic disks can be 0.8-1.2 inches, thickness
Can be 4-6mm.
S500：Ferrous acid bismuthino ceramic disks are carried out to bury burning processing
In the step, ferrous acid bismuthino ceramic disks are carried out to bury burning processing, to obtain ferrous acid bismuthino ceramic target.Invention
People is had found, ferrous acid bismuthino ceramic disks are carried out to bury burning processing, the volatilization of Bi elements in sintering process can be reduced, be conducive to carrying
Rise the growth quality and energy-storage property of bismuth ferrite based dielectric film.
According to one embodiment of present invention, the condition for burying burning processing is not particularly restricted, those skilled in the art
It can be selected according to actual needs, according to the specific embodiment of the present invention, the temperature for burying burning processing can be 1050-
1150 degrees Celsius, the time can be 35-45 minutes.Inventor has found that temperature is too low, the time is too short if burying burning, will cause ferrous acid
Not enough, reaction is incomplete, target poor performance for bismuth-based ceramics target sintered density；And if bury burning temperature be too high, overlong time,
Cost rise is prepared, and is also easy to produce excessive grain and is grown up and secondary recrystallization, causes target degradation.Thus, using this Shen
The burning treatment conditions of burying that please be proposed are remarkably improved the performance of ferrous acid bismuthino ceramic target, while preparation cost can be reduced.
S600：Ferrous acid bismuthino ceramic target is subjected to pulsed laser deposition processing and annealing
In the step, ferrous acid bismuthino ceramic target is subjected to pulsed laser deposition processing and annealing, to be used
In the bismuth ferrite based dielectric film of high density energy storage.Specifically, using the ferrous acid bismuthino ceramic target of laser bombardment, make its into
Divide and conductive single crystal substrate is diffused into stoichiometric proportion, extension is made under suitable base reservoir temperature, partial pressure of oxygen and annealing conditions
Thin dielectric film.Conductive single crystal substrate is selected from pure strontium titanates (SrTiO3), lanthanum aluminate (LaAlO3), magnesium aluminate (MgAl2O4) and
Extension perovskite ABO on the monocrystalline of at least one of magnesia3Structural conductive film, such as nickel acid lanthanum (LaNiO3), lanthanum strontium manganate,
Cobalt acid lanthanum-strontium, or the strontium titanate monocrystal that niobium adulterates.
According to one embodiment of present invention, the parameter of pulsed laser deposition processing is not particularly restricted, this area
Technical staff can be selected according to actual needs, according to the specific embodiment of the present invention, pulsed laser deposition processing
Parameter can be：Reaction cavity background vacuum is not higher than 5 × 10-6Mbar, base reservoir temperature is that 700-800 is Celsius during deposition
Degree, cavity partial pressure of oxygen is 1-5Pa, and it is 1-10sccm to lead to oxygen flow, and laser energy is 1-2.5J/cm2.Inventor's discovery,
Under above-mentioned parameter, bismuth ferrite based dielectric film is with suitable speed epitaxial growth, the bismuth ferrite based dielectric film matter of gained
Amount is high, is conducive to improving the dielectric and energy-storage property of film.
According to still a further embodiment, the condition of annealing is not particularly restricted, those skilled in the art
Member can be selected according to actual needs, and according to the specific embodiment of the present invention, the temperature of annealing can be
450-550 degrees Celsius, partial pressure of oxygen can be 200-800mbar, and the time of annealing can be 25-35min.Invention human hair
Existing, under the above parameters, the Lacking oxygen in bismuth ferrite based dielectric film is fully made up, and is conducive to improving the insulation of film
Ability and energy-storage property.
Preparation according to embodiments of the present invention is used for the method for the bismuth ferrite based dielectric film of high density energy storage by inciting somebody to action
BiFeO3With SrTiO3With transition elements Me be mixed with obtaining bismuth ferrite based raw material, the doping of transition elements can reduce iron
Sour bismuthino thin dielectric film leakage is led；By the way that bismuth ferrite based powders are carried out into preheating, a series of physical chemistry can be produced anti-
Should, the composition and its institutional framework of bismuth ferrite based powders can be improved, the performance of bismuth ferrite based powders is improved；Use obtained by this method
The characteristics of the bismuth ferrite based dielectric film of high density energy storage be leadless environment-friendly, high-voltage resistance capability it is strong, with excellent energy storage
Performance.Bismuth ferrite has very strong ferroelectricity, and its spontaneous polarization strength is up to 100 μ C/cm2, it is the outstanding of leaded ferroelectric material
Substitute.Strontium titanates is tendency Ferroelectric body, is paraelectric phase under normal temperature, with the characteristics of dielectric loss is low, leakage current is small.By two
Person forms solid solution (1-x) BiFeO3-xSrTiO3(x is molar fraction, 0<x<1), by regulating and controlling x value, and use suitably
Preparation method and parameter, the disruptive field intensity of the thin dielectric film of preparation is up to 3~4MV/cm, and energy storage density is up to 70.3J/cm3,
And with 70% high energy storage efficiency.Experiment prove this bismuth ferrite based dielectric film have concurrently simultaneously larger dielectric constant,
Less dielectric loss, higher disruptive field intensity and excellent energy-storage property, be one kind be hopeful be applied to embedded capacitor,
The material in the fields such as electrostatic energy storage component, Pulse Power Techniques.It should be noted that above-mentioned be directed to for high density energy storage
Feature and advantage described by bismuth ferrite based dielectric film, which are equally applicable to the preparation, is used for the ferrous acid bismuthino of high density energy storage
The method of thin dielectric film, here is omitted.
In an additional aspect of the present invention, the present invention proposes a kind of energy storage device, embodiments in accordance with the present invention, the storage
Energy device includes the above-mentioned bismuth ferrite based dielectric film for high density energy storage or is used for high density energy storage using above-mentioned preparation
Bismuth ferrite based dielectric film the obtained bismuth ferrite based dielectric film for high density energy storage of method.Thus, it can show
Write the energy-storage property for improving energy storage device.It should be noted that the above-mentioned bismuth ferrite based dielectric being directed to for high density energy storage
Film and the feature and advantage prepared described in method for the bismuth ferrite based dielectric film of high density energy storage are equally fitted
For the energy storage device, here is omitted.Specifically, the energy storage device can for dielectric capacitor, embedded capacitor,
Electrostatic energy storage component, pulse power element or the device further developed and assembled based on above-mentioned device.
Below with reference to specific embodiment, present invention is described, it is necessary to which explanation, these embodiments are only description
Property, without limiting the present invention in any way.
The method of testing of sample properties is as follows in following embodiments：Pass through direct-current ion sputtering side on film sample
Method prepares round metal electrode (a diameter of 100~400 μm, thickness about 100nm).Dielectric properties test uses Agilent company of the U.S.
The E4990A electric impedance analyzers of production, disruptive field intensity and ferroelectric hysteresis loop use Radiant Tech. companies of the U.S.
Precision Premier II ferroelectricities tester is tested, and energy storage density and efficiency are calculated by ferroelectric hysteresis loop and obtained.The present invention's
The structure and test schematic diagram of bismuth ferrite based dielectric film are as shown in Figure 2.
Embodiment 1
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.30) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 700 degrees Celsius, cavity partial pressure of oxygen during deposition
For 1.3Pa, it is 1.5sccm to lead to oxygen flow, and laser energy is 1.7J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 500mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 450nm, Fig. 3 show the section of bismuth ferrite based dielectric film
Scanning electron microscope (SEM) photograph, it can be found that film has good epitaxial quality, surface roughness small, film is fine and close, uniform, zero defect,
Be conducive to the raising of insulating capacity and energy-storage property.Fig. 4-6 respectively show Jie of bismuth ferrite based dielectric film (x=0.30)
Electric constant, dielectric loss, disruptive field intensity and energy storage density.The performance of the bismuth ferrite based dielectric film reaches following index：
The dielectric constant of bismuth ferrite based dielectric film and loss respectively 255 and 0.028 under 1kHz, disruptive field intensity is 2.77MV/cm,
Energy storage density reaches 21.8J/cm3。
Embodiment 2
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.45) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 700 degrees Celsius, cavity partial pressure of oxygen during deposition
For 1.3Pa, it is 1.5sccm to lead to oxygen flow, and laser energy is 1.7J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 500mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 450nm, Fig. 4-6 respectively show bismuth ferrite based dielectric film
(x=0.45) dielectric constant, dielectric loss, disruptive field intensity and energy storage density.The performance of the bismuth ferrite based dielectric film reaches
To following index：The dielectric constant of bismuth ferrite based dielectric film and loss are respectively 300 and 0.029, breakdown field at 1 khz
It is 3.38MV/cm by force, energy storage density reaches 35.6J/cm3。
Embodiment 3
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.60) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 700 degrees Celsius, cavity partial pressure of oxygen during deposition
For 1.3Pa, it is 1.5sccm to lead to oxygen flow, and laser energy is 1.7J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 500mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 450nm, Fig. 4-6 respectively show bismuth ferrite based dielectric film
(x=0.60) dielectric constant, dielectric loss, disruptive field intensity and energy storage density.Fig. 7 illustrates the bismuth ferrite based dielectric film
Ferroelectric hysteresis loop under different electric-field intensity.The performance of the bismuth ferrite based dielectric film reaches following index：Iron at 1 khz
The dielectric constant of sour bismuthino thin dielectric film and loss respectively 256 and 0.022, disruptive field intensity is 3.85MV/cm, energy storage density
Reach 70.3J/cm3, energy storage efficiency is up to 70%.
Embodiment 4
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.45) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 700 degrees Celsius, cavity partial pressure of oxygen during deposition
For 2.6Pa, it is 2sccm to lead to oxygen flow, and laser energy is 1.4J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 800mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 500nm, the performance of the bismuth ferrite based dielectric film reach as
Lower index：Under the conditions of test field strength is 2MV/cm, energy storage density reaches 20.9J/cm3, energy storage efficiency is 52%.
Embodiment 5
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.75) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 700 degrees Celsius, cavity partial pressure of oxygen during deposition
For 1.3Pa, it is 1sccm to lead to oxygen flow, and laser energy is 1.7J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 500mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 500nm, the performance of the bismuth ferrite based dielectric film reach as
Lower index：The dielectric constant of bismuth ferrite based dielectric film and loss are respectively 187 and 0.020 at 1 khz, and disruptive field intensity is
4.46MV/cm, energy storage density reaches 70.0J/cm3, energy storage efficiency is up to 68%.
Embodiment 6
By raw material Fe2O3、SrCO3、Bi2O3、TiO2And MnO2By (1-x) Bi1.1Fe0.995Mn0.005O3-xSrTiO3(x=
0.60) chemical formula carries out dispensing, drying after being medium ball milling 12 hours using absolute ethyl alcohol, sieves, and obtained powder is Celsius in 760
Spend pre-burning and obtain bismuth ferrite based ceramic powder body in 4 hours.5% (mass percent) concentration is added into bismuth ferrite based ceramic powder body
PVA solution is granulated, and about 1 inch of diameter, thickness about 5mm ferrous acid bismuthino ceramic disks are pressed under 12MPa tablet press machines.Insulation row
After PVA, ferrous acid bismuthino ceramic disks seal at 1100 degrees celsius bury burning 40min obtain ferrous acid bismuthino ceramic target.
Using pulsed laser deposition technique, using laser bombardment ferrous acid bismuthino ceramic target, make its composition with stoichiometry
Than the strontium titanates conductive single crystal substrate for being diffused into niobium doping, extension thin dielectric film is made.The parameter of pulsed laser deposition technique
Including：Reaction cavity background vacuum is not higher than 5 × 10-6mbar；Base reservoir temperature is 800 degrees Celsius, cavity partial pressure of oxygen during deposition
For 2.6Pa, it is 2sccm to lead to oxygen flow, and laser energy is 1.6J/cm2.Deposition terminate after, film 500 degrees Celsius,
Anneal 30min under 800mbar partials pressure of oxygen, is then cooled to room temperature with 10 degrees Celsius/min speed.
Obtained bismuth ferrite based dielectric film thickness about 540nm, the performance of the bismuth ferrite based dielectric film reach as
Lower index：The dielectric constant of bismuth ferrite based dielectric film and loss are respectively 275 and 0.020 at 1 khz, and disruptive field intensity is
Under conditions of 3.6MV/cm, energy storage density reaches 51J/cm3, energy storage efficiency is up to 64%.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the not be the same as Example or the feature of example and non-be the same as Example or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (10)
1. a kind of bismuth ferrite based dielectric film for high density energy storage, it is characterised in that the thin dielectric film chemistry into
It is (1-x) BiFeO to divide formula3-xSrTiO3, wherein, x is molar fraction, and 0<x<1.
2. thin dielectric film according to claim 1, it is characterised in that the ferrous acid bismuthino electricity for high density energy storage
The thickness of dielectric film is 150nm-2 μm.
3. thin dielectric film according to claim 1 or 2, it is characterised in that the bismuth ferrite for high density energy storage
Based dielectric film is transition element doped in Fe progress；
Optional, the doping of the transition elements is 0.1wt%-2.0wt%.
4. a kind of method for preparing thin dielectric film any one of claim 1-3, it is characterised in that including：
(1) by Bi2O3、Fe2O3、SrCO3、TiO2Mix is carried out with transition elements oxide of mutually MeO, to obtain ferrous acid bismuthino
Raw material；
(2) the bismuth ferrite based raw material and organic solvent are subjected to ball milling, drying and screening process successively, to obtain bismuth ferrite
Based powders；
(3) the bismuth ferrite based powders are subjected to preheating, to obtain bismuth ferrite based ceramic powder body；
(4) the bismuth ferrite based ceramic powder body and adhesive are granulated and compressing tablet process, to obtain ferrous acid bismuth-based ceramics
Disk；
(5) the ferrous acid bismuthino ceramic disks are carried out burying burning processing, to obtain ferrous acid bismuthino ceramic target；
(6) the ferrous acid bismuthino ceramic target is subjected to pulsed laser deposition processing and annealing, it is highly dense to obtain being used for
Spend the bismuth ferrite based dielectric film of energy storage.
5. method according to claim 4, it is characterised in that in step (1), the Me in the transition elements oxide of mutually
At least one of for selected from Mn, Sc, Cr, Ni, Nb；
Optional, the composition of the bismuth ferrite based raw material is (1-x) Bi1.1Fe(1-y)MeyO3xSrTiO3, wherein, 0<x<1,0.001
<y<0.02。
6. the method according to claim 4 or 5, it is characterised in that in step (2), the organic solvent is selected from nothing
At least one of water-ethanol, propyl alcohol, isopropanol and ethylene glycol；
Optional, the time of the ball-milling treatment is 11-13 hours；
Optional, the particle diameter of the bismuth ferrite based powders is 100-500nm.
7. the method according to any one of claim 4-6, it is characterised in that in step (3), the preheating
Temperature is 750-800 degrees Celsius, and the time is 3.5-4.5 hours.
8. the method according to any one of claim 4-7, it is characterised in that in step (4), described adhesive is choosing
From at least one of polyvinyl alcohol, polyethylene glycol, tetraethyl orthosilicate and hydroxypropyl methyl cellulose；
Optional, the pressure of the compressing tablet process is 10-14MPa；
Optional, a diameter of 0.8-1.2 inches of the ferrous acid bismuthino ceramic disks, thickness is 3-6mm；
Optional, in step (5), the temperature for burying burning processing is 1050-1150 degrees Celsius, and the time is 30-45 minutes.
9. the method according to any one of claim 4-8, it is characterised in that in step (6), the pulse laser sinks
Accumulating the parameter handled is：Reaction cavity background vacuum is not higher than 5 × 10-6Mbar, base reservoir temperature is that 700-800 is Celsius during deposition
Degree, cavity partial pressure of oxygen is 1-5Pa, and it is 1-10sccm to lead to oxygen flow, and laser energy is 1-2.5J/cm2；
Optional, the temperature of the annealing is 450-550 degrees Celsius, and partial pressure of oxygen is 200-800mbar, annealing when
Between be 15-35min.
10. a kind of energy storage device, it is characterised in that the energy storage device includes being used for any one of claim 1-3
The bismuth ferrite based dielectric film of high density energy storage is used for height using what the method any one of claim 4-9 was obtained
The bismuth ferrite based dielectric film of density energy storage.
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| WO2018177019A1 (en) * | 2017-03-28 | 2018-10-04 | 清华大学 | Bismuth ferrite-based dielectric thin film for high-density energy storage, preparation method therefor and use thereof |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102086119B (en) * | 2010-12-09 | 2013-03-20 | 华中科技大学 | Method for preparing room-temperature multiferroic BiFeO3-SrTiO3 sosoloid ceramics |
| CN103343315B (en) * | 2013-06-04 | 2016-07-06 | 南京理工大学 | A kind of doped bismuth ferrite semiconductor film material and preparation method thereof |
| CN104387058A (en) * | 2014-11-07 | 2015-03-04 | 北方工业大学 | Preparation method of bismuth ferrite-based multiferroic ceramic |
| CN107056276A (en) * | 2017-03-28 | 2017-08-18 | 清华大学 | Bismuth ferrite based dielectric film for high density energy storage and its preparation method and application |
-
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-
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Non-Patent Citations (1)
| Title |
|---|
| HAO PAN等: "BiFeO3-SrTiO3 thin film as a new lead-free relaxor-ferroelectric capacitor with", 《JOURNAL OF MATERIALS CHEMISTRY》 * |
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