CN107039187B - A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide - Google Patents
A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide Download PDFInfo
- Publication number
- CN107039187B CN107039187B CN201710249862.1A CN201710249862A CN107039187B CN 107039187 B CN107039187 B CN 107039187B CN 201710249862 A CN201710249862 A CN 201710249862A CN 107039187 B CN107039187 B CN 107039187B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- preparation
- light anode
- solar battery
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide, comprising the following steps: (1) clean transparent FTO electro-conductive glass；(2) deionized water solution, the AgNO of sodium thiosulfate are prepared3Deionized water solution, prepare Ag2Se quantum dot, and be scattered in dehydrated alcohol；(3) TiO is prepared2Conductive film carries out ligand exchange to conductive film surface, obtains the light anode through bifunctional molecule modified, is sensitized Ag2Se quantum dot forms quantum dot sensitized light anode；(4) to dropwise addition electrolyte in the middle part of quantum dot sensitized light anode, electrolyte is allowed to be diffused into the working portion of entire electrode；(5) electrode will be covered to electrolyte, light anode is fixed together with to electrode, obtains quantum dot solar cell.The present invention uses nontoxic Ag2Se quantum dot, and the mode of application ligand exchange improves the coverage rate of quantum dot, improves the photoelectric efficiency of device.
Description
Technical field
The invention belongs to area of solar cell more particularly to a kind of dystopy to adsorb silver selenide (Ag2Se) quantum dot sensitized
The preparation method of solar battery.
Background technique
With increasingly depleted, the emphasis and national economy of cleaning and the utilization of renewable energy as research of fossil energy sources
The lifeblood of development.Representative of the quantum dot solar cell as third generation solar cell has low in cost, manufacture craft letter
Singly, the features such as potential efficient.Quantum dot solar cell (QDSSC) is mainly made of three parts, light anode, electrolyte and to electricity
Pole, light anode are the cores of battery, its preparation is that will have the wide band gap semiconducter film of nanostructure (usually
TiO2) be covered on transparent conducting glass, then one layer of quantum dot is deposited on surface.It is divided from deposition approach, at present quantum
The deposition method of point can be divided mainly into two major classes: in TiO2Direct growth quantum point and the pre-synthesis quantum dot of use on mesoporous film
Adsorb the mode of assembling.Using TiO2The method of direct growth quantum point on mesoporous film, there are quantum dots in semiconductor surface point
The disadvantages of cloth is uneven, preparation time is long, process is cumbersome.And the mode of pre-synthesis quantum dot absorption assembling, it is easy to operate, it can
By controlling the forbidden bandwidth of synthesis condition quantum point, the photoelectric efficiency of quantum dot sensitized solar battery is improved；But
Using this kind of method, have the shortcomings that surface coverage is low, influences the photoelectric efficiency of solar battery.
103594248 A of CN discloses a kind of Bi2S3Quantum dot sensitized TiO2Solar battery preparation method, use
Continuous ionic layer absorption method synthesizes quantum dot sensitizing layer, prepares quantum dot sensitization solar battery.But it is made using this kind of method
Standby quantum dot surface partial size is uneven, and preparation process is cumbersome.
CN102930995 A discloses a kind of quantum dot modification organic inorganic hybridization solar battery and preparation method thereof,
Using continuous ionic layer absorption method in TiO2CdSe quantum dot is generated on nanometer stick array and organic polymer is deposited above
P3HT.But this method higher cost is used, and synthesis process is complicated, prepare TiO if you need to hydro-thermal method2Nanometer rods.
102364648 A of CN discloses a kind of quantum dot-TiO of sulfydryl bridging molecules bonding2Nano compound light anode
Preparation method, using the quantum dot-TiO of hydro-thermal method synthesis sulfydryl bridging molecules bonding2Complex light anode, but measured in this method
The preparation process of son point is more complex, and needs the reaction condition of high temperature and pressure, is unfavorable for promoting and applying.
As known from the above, the grafting method of quantum dot has great meaning to the photoelectric properties for improving quantum dot solar cell
Justice, a kind of synthetic method of simultaneous selection is simple, the suitable narrow band gap quantum dot of band gap is also particularly important.
Summary of the invention
The technical problem to be solved by the present invention is to it is simply different to overcome the deficiencies of the prior art and provide a kind of synthetic method
Position absorption silver selenide (Ag2Se) the preparation method of quantum dot sensitized solar battery, gained quantum dot sensitization solar battery grain
Diameter is controllable, and photoelectric properties are preferable.
The technical solution used to solve the technical problems of the present invention is that a kind of dystopy adsorbs silver selenide (Ag2Se) quantum dot
The preparation method of sensitization solar battery, comprising the following steps:
(1) transparent FTO electro-conductive glass is cleaned, electrically conducting transparent substrate is obtained；
(2) Na is prepared respectively2SeSO3Deionized water solution, the AgNO of (sodium thiosulfate)3Deionized water solution, use
Water phase co-electrodeposition method prepares Ag2Se quantum dot, and be scattered in dehydrated alcohol, obtain Ag2Se quantum dot ethanol solution；
(3) TiO is prepared using sol-gel method2Conductive film carries out ligand to conductive film surface by immersion way
Exchange, obtains the light anode through bifunctional molecule modified, is sensitized Ag using direct absorption method2Se quantum dot forms quantum dot
It is sensitized light anode；
(4) to electrolyte is added dropwise in the middle part of quantum dot sensitized light anode obtained by step (3), electrolysis is allowed using solution diffusion
Liquid is diffused into the working portion of entire electrode；
(5) electrode will be covered to the electrolyte of step (4), light anode is fixed together with to electrode with clip, is obtained
To quantum dot solar cell.
Above-mentioned preparation method, it is preferred that in the step (1), cleaning way are as follows: successively using deionized water, anhydrous
Ethyl alcohol, 15 ~ 20 min of isopropanol ultrasonic vibration, after concussion, using ozone oxidation surface organic group.
Above-mentioned preparation method, it is preferred that in the step (2), Ag2The preparation method of Se quantum dot: AgNO is used3's
Deionized water solution is as silver-colored source, Na2SeSO3Deionized water solution be selenium source, polyvinylpyrrolidone (PVP) as dispersion
Agent, 3- mercaptopropionic acid (3-MPA) are used as surface stabilizer；
Surface stabilizer and dispersing agent are added into the deionized water solution of silver nitrate, and ammonium hydroxide is added and adjusts pH to 10.1
~ 10.8, add selenium source, be stirred to react 5 ~ 10 min(and synthesize quantum dot in water phase), centrifuge separation, by obtained solid quantum
Point particle is scattered in dehydrated alcohol, obtains Ag2Se quantum dot ethanol solution.
Above-mentioned preparation method, it is preferred that in the step (2), the control of the deionized water solution concentration of silver nitrate for 2 ~
10 mmol/L。Na2SeSO3In sodium thiosulfate and silver nitrate solution in the deionized water solution of (sodium thiosulfate)
AgNO3Molar ratio be 1:(2 ~ 5).The mass ratio of silver nitrate in the additional amount and silver nitrate solution of dispersing agent be (0.15 ~
1.7): 1.The additional amount and AgNO of surface stabilizer3Deionized water solution volume ratio be (0.05 ~ 0.15): 1.
Above-mentioned preparation method, it is preferred that in the step (2), gained Ag2The concentration of Se quantum dot ethanol solution
For 4 ~ 10 mmol/L.
Above-mentioned preparation method, it is preferred that in the step (3), detailed process are as follows: spin-coating method is used, it will
TiO2The FTO conductive glass surface that slurry for rotary coating is cleaned up in step (1), is allowed to form uniform ground film, be subsequently placed in
Through 400~450 DEG C of 30~60min of temperature calcination in Muffle furnace, cools to room temperature with the furnace, obtain TiO2Light anode；By gained TiO2
24 ~ 36 h(of acetonitrile solution that light anode immerses bifunctional molecule grafts bifunctional molecule), washes of absolute alcohol, leaching are used after taking-up
Enter Ag obtained by step (2)224 ~ 36 h are in Se quantum dot ethanol solution to get quantum dot sensitized light anode.
Above-mentioned preparation method, it is preferred that in the step (3), bifunctional molecule includes but is not limited to mercaptopropionic acid (3-
MPA), cysteine, hydrogen thioglycolic acid (i.e. thioacetic acid writes a Chinese character in simplified form TGA) etc..Solvent is acetonitrile, when bifunctional molecule selects half
When cystine, saturated solution is selected；When selecting mercaptopropionic acid, hydrogen thioglycolic acid, control volumetric concentration is 10 ~ 20%.
Above-mentioned preparation method, it is preferred that in the step (4), electrolyte be polysulfide electrolyte, main component and
Concentration: Na2The control of S concentration is 1.5 ~ 2.5 mol/L, and the control of S simple substance is 1.5 ~ 2.5 mol/L, is dissolved in deionized water.
Above-mentioned preparation method, it is preferred that be platinum electrode or CuS electrode to electrode in the step (5).
Ag is prepared using water phase co-electrodeposition method first2The quantum dot sensitized liquid of Se, then on conductive substrates using spin-coating method
Prepare TiO2Semi-conducting electrode, to TiO2The progress of semi-conductor electricity pole surface application bifunctional molecule is ligand modified, using directly absorption
Method carries out Ag2Se is quantum dot sensitized；Finally to electrolyte is added dropwise in the middle part of electrode, electrolyte is allowed to be diffused into entirely using diffusion
Electrode covers electrode and fixation, that is, can be made into quantum dot sensitized solar battery.The present invention uses nontoxic Ag2Se quantum dot,
And the mode of application ligand exchange improves the coverage rate of quantum dot, improves the photoelectric efficiency of device.
Ag2Se is one of silver-colored chalcogenide, and band gap is in 0.07 ~ 0.15 eV(R. Dalven, R.
Gill, Phys. Rev. 159 (1995) 645-649), there are good photo-thermal and photoelectric properties, element is nontoxic, and this hair
Bright to synthesize quantum dot using co-electrodeposition method, method is easy, practical.Size by adjusting particle changes the forbidden band of quantum dot
Width, while being added and matching vegetative grafting step, optimization quantum dot improves be sensitized broad stopband in the distribution at wide bandgap semiconductor interface
The coverage rate of semiconductor, to improve the photoelectric properties of quantum dot solar cell.
Compared with the prior art, the advantages of the present invention are as follows:
Ag is synthesized using water phase co-electrodeposition method2Se quantum dot, synthetic method is simple, and preparation is convenient, nontoxic, and partial size
Controllably, the quantum dot that different band gap can be synthesized, corresponding to different extinction wave bands；Synthesized quantum dot is made using mercaptopropionic acid
For surface dispersant, and mercaptopropionic acid is commonly used for the difunctional connection molecule of quantum dot and light anode, is conducive to quantum dot sensitized
The progress of process improves area coverage；To synthesis TiO2Light anode carries out ligand exchange, with bifunctional molecule modification broad stopband half
Conductive surface can be further improved quantum dot to the level of coverage of light anode, improve the photoelectricity of quantum dot sensitized solar battery
Performance.
Detailed description of the invention
Fig. 1 is that the embodiment of the present invention 1 prepares resulting Ag2The quantum dot sensitized TiO of Se2The FESEM of photoanode surface schemes.
Specific embodiment
To facilitate the understanding of the present invention, present invention work more comprehensively, is meticulously described below in conjunction with preferred embodiment,
But the protection scope of the present invention is not limited to the following specific embodiments.
Unless otherwise defined, all technical terms used hereinafter and the normally understood meaning of those skilled in the art
It is identical.Technical term used herein is intended merely to the purpose of description specific embodiment, is not intended to the limitation present invention
Protection scope.
Except there is a special instruction, the various reagents used in the present invention, raw material be can commodity commercially or
Person can the product as made from well known method.
Embodiment 1:
The dystopy of the present embodiment adsorbs silver selenide (Ag2Se) the preparation method of quantum dot sensitized solar battery, including with
Lower step:
(1) preparation of transparent conductive substrate: selecting transparent FTO electro-conductive glass, successively immerse deionized water, dehydrated alcohol,
15 min of ultrasonic vibration in isopropanol after concussion, using the organic group of ozone oxidation FTO conductive glass surface, is obtained
Electrically conducting transparent substrate.
(2) Ag is prepared using water phase co-electrodeposition method2Se quantum dot: 6 mL, 8 mmol/L silver nitrate is added in there-necked flask
Deionized water solution adds 0.8 mL3- mercaptopropionic acid and 5 mg polyvinylpyrrolidones, and be added ammonium hydroxide adjust pH to
10.5,10 min are stirred, the deionized water solution of 6 mL, 4 mmol/L sodium thiosulfate is added, continue to stir 10min, from
Ag is obtained after heart separation2Se quantum dot (average grain diameter is measured as 6.24 nm), and by resulting Ag2Se quantum dot is scattered in 3 mL
In dehydrated alcohol, the Ag that concentration is 4 mmol/L is obtained2Se quantum dot ethanol solution；
(3) quantum dot sensitized light anode is prepared: using spin-coating method, by TiO2Slurry for rotary coating is cleaned in step (1)
Clean FTO conductive glass surface, is allowed to form uniform ground film, is subsequently placed in Muffle furnace and is warming up at 450 DEG C of roastings
50 min are managed, cool to room temperature with the furnace, obtain TiO2Light anode；Again by gained TiO2Light anode is placed in the mercapto that volumetric concentration is 10%
24 h are impregnated in the acetonitrile solution of base propionic acid (3-MPA), are sufficiently cleaned after taking-up with dehydrated alcohol, then are soaked in step (2) institute
Obtain Ag2For 24 hours to get quantum dot sensitized light anode in Se quantum dot ethanol solution.
(4) it prepares quantum dot sensitization solar battery device: weighing S and Na according to a certain percentage2S is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains electrolyte-polysulfide electrolyte,
It is added dropwise in the resulting quantum dot sensitized light anode of step (3), allows electrolyte to be diffused into entire electrode using solution diffusion
Working portion；
(5) CuS electrode will be covered to the electrolyte of step (4), will be fixed light anode together with to electrode with clip,
Obtain dystopy absorption silver selenide (Ag2Se) quantum dot sensitized solar battery.
Test the resulting Ag of the present embodiment2The performance of the quantum dot sensitized solar battery of Se: in room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity are 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric conversion efficiency be 4.5%.
Embodiment 2:
The dystopy of the present embodiment adsorbs silver selenide (Ag2Se) the preparation method of quantum dot sensitized solar battery, including with
Lower step:
(1) preparation of transparent conductive substrate: selecting transparent FTO electro-conductive glass, successively immerse deionized water, dehydrated alcohol,
20 min of ultrasonic vibration in isopropanol, after concussion, using the organic group of ozone oxidation FTO conductive glass surface.
(2) Ag is prepared using water phase co-electrodeposition method2Se quantum dot: 6 mL, 8 mmol/L silver nitrate is added in there-necked flask
Deionized water solution adds 0.8 mL3- mercaptopropionic acid and 5 mg polyvinylpyrrolidones, and be added ammonium hydroxide adjust pH to
10.5,10 min are stirred, 6 mL, 4 mmol/L Na is added2SeSO3Deionized water solution, continue stir 10min, centrifugation
Ag is obtained after separation2Se solid quantum dot particle (average grain diameter is measured as 7.13 nm), and by resulting Ag2Se solid quantum dot
Particle is scattered in 3 mL dehydrated alcohols, obtains the Ag that concentration is 8 mmol/L2Se quantum dot ethanol solution；
(3) quantum dot sensitized light anode is prepared: using spin-coating method, by TiO2Slurry for rotary coating is cleaned in step (1)
Clean FTO conductive glass surface, is allowed to form uniform ground film, is subsequently placed in Muffle furnace and is warming up at 450 DEG C of roastings
50 min are managed, cool to room temperature with the furnace, obtain TiO2Light anode；Again by gained TiO2Light anode is placed in the hydrogen that volumetric concentration is 20%
30 h are impregnated in the acetonitrile solution of thioglycolic acid (TGA), are sufficiently cleaned after taking-up with dehydrated alcohol, then are soaked in step (2) institute
Obtain Ag230 h are in Se quantum dot ethanol solution to get quantum dot sensitized light anode.
(4) it prepares quantum dot sensitization solar battery device: weighing S and Na according to a certain percentage2S is dissolved in deionization
In water, Na2The control of S concentration is 2 mol/L, and the control of S simple substance is 2 mol/L, obtains electrolyte-polysulfide electrolyte, will be electric
Solution drop is added in the resulting quantum dot sensitized light anode of step (3), allows electrolyte to be diffused into entirely using solution diffusion
The working portion of electrode.
(5) CuS covers to the electrolyte of step (4) electrode, is fixed light anode together with to electrode with clip,
Obtain quantum dot solar cell.
Test the resulting Ag of the present embodiment2The performance of the quantum dot sensitized solar battery of Se: in room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity are 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric conversion efficiency be 5.1%.
Comparative example 1:
In this comparative example, it is not added ligand modified lower using direct absorption method preparation Ag2The quantum dot sensitized light anode of Se:
(1) preparation of transparent conductive substrate: selecting transparent FTO electro-conductive glass, successively immerse deionized water, dehydrated alcohol,
15 min of ultrasonic vibration in isopropanol, after concussion, using the organic group of ozone oxidation FTO conductive glass surface.
(2) Ag is prepared using water phase co-electrodeposition method2Se quantum dot: 6 mL, 8 mmol/L silver nitrate water is added in there-necked flask
Solution adds 0.8 mL3- mercaptopropionic acid and 5mg polyvinylpyrrolidone, and ammonium hydroxide is added and adjusts pH to 10.5, stirring 10
Min adds the deionized water solution of 6 mL, 4 mmol/L sodium thiosulfate, continues to stir 10min, obtain after centrifuge separation
Ag2Se quantum dot (average grain diameter is measured as 6.24 nm), and by resulting Ag2Se quantum dot is scattered in 3 mL dehydrated alcohols,
Obtain the Ag that concentration is 4 mmol/L2Se quantum dot ethanol solution；
(3) quantum dot sensitized light anode is prepared: using spin-coating method, by TiO2Slurry for rotary coating is cleaned in step (1)
Clean FTO conductive glass surface, is allowed to form uniform ground film, is subsequently placed in Muffle furnace and is warming up at 450 DEG C of roastings
50 min are managed, cool to room temperature with the furnace, obtain TiO2Light anode；Again by gained TiO2Light anode is soaked in obtained by step (2)
Ag224 h in Se quantum dot ethanol solution, obtain quantum dot sensitized light anode.
(4) it prepares quantum dot sensitization solar battery device: weighing S and Na according to a certain percentage2S is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains liquid electrolyte, is added dropwise in step
(3) in resulting quantum dot sensitized light anode, electrolyte is allowed to be diffused into the working portion of entire electrode using solution diffusion.
(5) CuS electrode is covered to electrolyte, light anode is fixed together with to electrode with clip, obtains quantum dot
Solar battery.
Test the resulting Ag of this comparative example2The performance of the quantum dot sensitized solar battery of Se: in room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity are 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric conversion efficiency be 2.7%.
Comparative example 2
In this comparative example, Ag is prepared using continuous ionic layer method2The quantum dot sensitized light anode of Se:
(1) preparation of transparent conductive substrate: selecting transparent FTO electro-conductive glass, successively immerse deionized water, dehydrated alcohol,
20 min of ultrasonic vibration in isopropanol, using the organic group of ozone oxidation FTO conductive glass surface.
(2) quantum dot sensitized light anode is prepared: using spin-coating method, by TiO2Slurry for rotary coating is in cleaning up
FTO conductive glass surface is allowed to form uniform ground film, is subsequently placed in Muffle furnace and is warming up to 450 DEG C of calcination process 50
Min obtains TiO2Light anode；At 25 DEG C, the TiO that will prepare2Light anode is soaked in the AgNO of 0.1 mol/L3Solution one divides
Clock is warming up to 50 DEG C, then is soaked in the Na of 0.3mol/L2SeSO3One hour in solution, repeat aforesaid operations 4 times, until light
Anode surface deposits one layer of Ag completely2Se quantum dot particle, obtains Ag2Se is sensitized light anode.
(4) it prepares quantum dot sensitization solar battery device: weighing S and Na according to a certain percentage2S is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains liquid electrolyte, is added dropwise in step
(3) in resulting quantum dot sensitized light anode, electrolyte is allowed to be diffused into the working portion of entire electrode using solution diffusion.
(5) CuS electrode is covered to electrolyte, light anode is fixed together with to electrode with clip, obtains quantum dot
Solar battery.
Test the resulting Ag of the present embodiment2The performance of the quantum dot sensitized solar battery of Se: in room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity are 100 mW/cm2, effective illuminating area is 0.25 cm2When photoelectric conversion efficiency be 3.1%.
To sum up, dystopy provided by the present invention adsorbs Ag2The preparation method of the quantum dot sensitized solar battery of Se, compared to
Without quantum dot solar cell prepared by ligand modified quantum dot sensitized solar battery and other modes, prepared amount
The photoelectric efficiency of the solar energy electrical part of son point sensitization is higher.Therefore, method provided by the present invention is not only easy to operate, at
This is cheap, and is improved using the photoelectric properties of the quantum dot solar cell of this method preparation.
Claims (8)
1. a kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide, which is characterized in that including following step
It is rapid:
(1) transparent FTO electro-conductive glass is cleaned, electrically conducting transparent substrate is obtained；
(2) deionized water solution, the AgNO of sodium thiosulfate are prepared respectively3Deionized water solution, using water phase be co-deposited legal system
Standby Ag2Se quantum dot, and be scattered in dehydrated alcohol, obtain Ag2Se quantum dot ethanol solution；
In the step (2), Ag2The preparation method of Se quantum dot: AgNO is used3Deionized water solution as silver-colored source,
Na2SeSO3Deionized water solution be selenium source, polyvinylpyrrolidone as dispersing agent, 3- mercaptopropionic acid as surface-stable
Agent；
Surface stabilizer and dispersing agent are added into the deionized water solution of silver nitrate, and be added ammonium hydroxide adjust pH to 10.1 ~
10.8, selenium source is added, 5 ~ 10 min are stirred to react, is centrifugated, disperses dehydrated alcohol for obtained solid quantum dot particle
In solution, Ag is obtained2Se quantum dot ethanol solution；
In the step (2), the deionized water solution concentration control of silver nitrate is 2 ~ 10 mmol/L；Sodium thiosulfate go from
The AgNO in sodium thiosulfate and silver nitrate solution in sub- aqueous solution3Molar ratio be 1:(2 ~ 5)；The additional amount of dispersing agent with
The mass ratio of silver nitrate in silver nitrate solution is (0.15 ~ 1.7): 1；The additional amount and AgNO of surface stabilizer3Deionization
The volume ratio of aqueous solution is (0.05 ~ 0.15): 1；
(3) TiO is prepared using sol-gel method2Conductive film carries out ligand exchange to conductive film surface by immersion way,
The light anode through bifunctional molecule modified is obtained, is sensitized Ag using direct absorption method2Se quantum dot forms quantum dot sensitized light
Anode；
(4) to dropwise addition electrolyte in the middle part of quantum dot sensitized light anode obtained by step (3), electrolyte is allowed to expand using solution diffusion
It is scattered to the working portion of entire electrode；
(5) electrode will be covered to the electrolyte of step (4), will be fixed light anode together with to electrode with clip, the amount of obtaining
Son point solar battery.
2. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as described in claim 1, feature exist
In, in the step (1), cleaning way are as follows: successively use deionized water, dehydrated alcohol, isopropanol ultrasonic vibration 15 ~ 20
Min, after concussion, using ozone oxidation surface organic group.
3. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 1 or 2, feature
It is, in the step (2), gained Ag2The concentration of Se quantum dot ethanol solution is 4 ~ 10 mmol/L.
4. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 1 or 2, feature
It is, in the step (3), detailed process are as follows: spin-coating method is used, by TiO2Slurry for rotary coating is dry in step (1) cleaning
Net FTO conductive glass surface, is allowed to form uniform ground film, is subsequently placed in Muffle furnace and roasts through 400~450 DEG C of temperature
30~60min is burnt, room temperature is cooled to the furnace, obtains TiO2Light anode；By gained TiO2The acetonitrile that light anode immerses bifunctional molecule is molten
24 ~ 36 h of liquid uses washes of absolute alcohol after taking-up, immerse Ag obtained by step (2)224 ~ 36 in Se quantum dot ethanol solution
H is to get quantum dot sensitized light anode.
5. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 4, feature exist
In in the step (3), bifunctional molecule is at least one of mercaptopropionic acid, cysteine, hydrogen thioglycolic acid.
6. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 5, feature exist
In in the step (3), solvent is acetonitrile, when bifunctional molecule selects cysteine, selects saturated solution；When selection mercapto
When base propionic acid, hydrogen thioglycolic acid, control volumetric concentration is 10 ~ 20%.
7. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 1 or 2, feature
It is, in the step (4), electrolyte is polysulfide electrolyte, main component and concentration: Na2The control of S concentration for 1.5 ~
The control of 2.5 mol/L, S simple substance is 1.5 ~ 2.5 mol/L, is dissolved in deionized water.
8. the preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide as claimed in claim 1 or 2, feature
It is, is platinum electrode or CuS electrode to electrode in the step (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710249862.1A CN107039187B (en) | 2017-04-17 | 2017-04-17 | A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710249862.1A CN107039187B (en) | 2017-04-17 | 2017-04-17 | A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107039187A CN107039187A (en) | 2017-08-11 |
| CN107039187B true CN107039187B (en) | 2019-07-16 |
Family
ID=59535290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710249862.1A Expired - Fee Related CN107039187B (en) | 2017-04-17 | 2017-04-17 | A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107039187B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112108157B (en) * | 2019-06-20 | 2023-05-12 | 天津城建大学 | Ag (silver) alloy 2 S quantum dot sensitized nano leaf-shaped InVO 4 Method for producing film |
| CN115512972B (en) * | 2022-08-18 | 2023-11-03 | 河北大学 | Preparation method of quasi-solid electrolyte for quantum dot sensitized solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995273A (en) * | 2007-01-09 | 2007-07-11 | 南开大学 | Synthesis method of core/shell type cadmium telluride/cadmium sulfide water-soluble quantum dot |
| CN101026199A (en) * | 2007-03-26 | 2007-08-29 | 浙江大学 | Method for for preparing cadmiumsulfide quantum dot sensitized porous titanium dioxide photoelectrode |
| CN101404215A (en) * | 2008-09-09 | 2009-04-08 | 上海拓引数码技术有限公司 | Production method for semiconductor quantum point-contained dye sensitization battery |
| CN103484121A (en) * | 2013-09-07 | 2014-01-01 | 桂林理工大学 | Method for preparing near infrared fluorescent Ag2Se colloid semiconductor nanocrystals by adopting normal-temperature aqueous phase process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335345B2 (en) * | 2004-05-24 | 2008-02-26 | Drexel University | Synthesis of water soluble nanocrystalline quantum dots and uses thereof |
-
2017
- 2017-04-17 CN CN201710249862.1A patent/CN107039187B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995273A (en) * | 2007-01-09 | 2007-07-11 | 南开大学 | Synthesis method of core/shell type cadmium telluride/cadmium sulfide water-soluble quantum dot |
| CN101026199A (en) * | 2007-03-26 | 2007-08-29 | 浙江大学 | Method for for preparing cadmiumsulfide quantum dot sensitized porous titanium dioxide photoelectrode |
| CN101404215A (en) * | 2008-09-09 | 2009-04-08 | 上海拓引数码技术有限公司 | Production method for semiconductor quantum point-contained dye sensitization battery |
| CN103484121A (en) * | 2013-09-07 | 2014-01-01 | 桂林理工大学 | Method for preparing near infrared fluorescent Ag2Se colloid semiconductor nanocrystals by adopting normal-temperature aqueous phase process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107039187A (en) | 2017-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110479379B (en) | Covalent organic framework material catalyst based on loaded Ru nanoparticles and preparation method and application thereof | |
| CN104465118B (en) | Honeycomb structure graphene/ZnO nanorod composite film, manufacturing method and application | |
| CN106498372B (en) | Light deposition prepares Bi/BiVO4The method of composite photoelectric anode material | |
| CN106521547B (en) | A kind of TiO2/RGO/C3N4The Preparation method and use of combination electrode | |
| CN110560105B (en) | Preparation of nickel phosphide-loaded sulfur indium zinc nano microsphere composite material and application of composite material in photocatalytic hydrogen production | |
| CN107376944B (en) | Application of transition metal sulfide loaded Mn-Cd-S solid solution in aspect of photocatalytic hydrogen production | |
| CN109355673B (en) | Au-Ag/Ag2S heterojunction nano hydrogen evolution catalyst and preparation method thereof | |
| CN103265065B (en) | Preparation method of graded zinc stannate macroporous materials | |
| CN108502859A (en) | A kind of photochemical method for preparation of combination electrode | |
| CN108147472A (en) | A kind of preparation method of hollow cobalt sulfide microspherical catalyst | |
| Jin et al. | Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells | |
| CN103871750B (en) | Anatase TiO2 nanometer tree array and application of anatase TiO2 nanometer tree array to solar cell preparation | |
| CN107039187B (en) | A kind of preparation method of the dystopy absorption quantum dot sensitized solar battery of silver selenide | |
| Li et al. | Effect of visible light irradiation on hydrogen production by CoNi2S4/CdWO4 controllable flower spherical photocatalyst | |
| CN110681874B (en) | Preparation method and hydrogen evolution application of silver-nickel nanocluster | |
| CN105719836A (en) | Preparation method of dye-sensitized solar battery cobalt-nickel sulfide counter electrode | |
| CN107675200A (en) | A kind of modified g C3N4Quantum dot/TiO2Nano wire light anode and its application | |
| Tian et al. | Facile synthesis of Ag2Se quantum dots and their application in Dye/Ag2Se co-sensitized solar cells | |
| CN104952626B (en) | It is a kind of nanocrystalline to electrode and preparation method thereof | |
| Sun et al. | Preparation and photoelectric properties of Bi doped ZnO nanoarrays | |
| Yong et al. | Conformal coating of CdS onto flexible enokitake-like standing gold nanowire arrays for omnidirectional low-light-intensity photocatalysis | |
| CN104282440B (en) | Method for preparing sulfur group quantum dot sensitization oxide semiconductor photo-anode | |
| Li et al. | Improved performance of quantum dot-sensitized solar cells by full-spectrum utilization | |
| CN108823602A (en) | A kind of vulcanization ruthenium particulate composite, preparation method and the usage | |
| CN108538607A (en) | Type II heterojunction WO3-ZnWO4Thin-film photoelectric anode, preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190716 Termination date: 20200417 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |