CN107034446A - A kind of PECVD device and clean method for possessing cleaning function - Google Patents
A kind of PECVD device and clean method for possessing cleaning function Download PDFInfo
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- CN107034446A CN107034446A CN201710294981.9A CN201710294981A CN107034446A CN 107034446 A CN107034446 A CN 107034446A CN 201710294981 A CN201710294981 A CN 201710294981A CN 107034446 A CN107034446 A CN 107034446A
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- dispersion plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application is related to PECVD device technical field, more particularly to a kind of PECVD device and clean method for possessing cleaning function, to solve present in prior art because the distance of remote plasma clean device transmission cleaning plasma is longer and causes the problem of cleaning efficiency is reduced.By setting the first metal dispersion plate and the second metal dispersion plate in the chamber of PECVD device, and by for the first metal dispersion plate, second metal dispersion plate and metal supporting table connect different power supplys respectively, to form cleaning plasma gas used in the chamber of PECVD device, avoid the defect for cleaning plasma gas used using pipeline by remote plasma clean device in the prior art, evaded cleaning plasma gas used by pipeline may caused by gas loss, improve the utilization rate of cleaning plasma gas used, improve cleaning efficiency.
Description
Technical field
The application is related to PECVD device technical field, more particularly to a kind of PECVD device for possessing cleaning function and cleaning
Method.
Background technology
Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition,
PECVD) method, is for general on substrate (such as semiconductor substrate, solar base plate, Organic Light Emitting Diode substrate and liquid crystal display
Substrate) on deposition film.PECVD mainly makes the gas ionization containing film composed atom by microwave or radio frequency etc., in part
Plasma is formed, and plasma chemistry activity is very strong, it is easy to react, and then deposit on substrate desired
Film；And the film deposition process occurs in the vacuum chamber of PECVD device, wherein, the substrate of film to be deposited is arranged on
In the substrate support pedestal in the vacuum chamber.
Generally, thin film transistor (TFT) TFT passivation layer or gate dielectric layer are used as using the PECVD films deposited, and it is blunt
The film forming yield for changing layer or gate dielectric layer is the key factor for influenceing TFT electrical；However, in deposition process, can not keep away
Film separation, i.e. part film, which occur, for the meeting exempted from can peel off and drop, formation molecule Particle, and numerous molecule meetings
Film forming yield is influenceed, and then, influence TFT electrically and yield of devices.Therefore, the chamber of PECVD device needs regular cleaning, with clear
The influence caused except molecule to film forming yield.At present, can be by configuring the chamber 11 in PECVD device shown in reference picture 1
Remote plasma clean device 12 in addition is cleaned to chamber 11, i.e., by remote plasma clean device 12
The plasma of the free radical containing F is produced, is then inputted using the pipeline 13 of connection to the chamber of PECVD device, in order to etc.
Gas ions are chemically reacted with the molecule in chamber, so as to realize the cleaning treatment to chamber.
However, because the remote plasma clean device used at present is distant at a distance of the chamber of PECVD device, containing F
The transmission range of the plasma of free radical is corresponding longer, and then, during chamber is entered with the inwall of transmission pipeline not
It is evitable to chemically react, as a result cause to enter the free-radical contents reduction in chamber, cleaning efficiency declines.
The content of the invention
The embodiment of the present application provides a kind of PECVD device and clean method for possessing cleaning function, to solve existing skill
Because the distance of remote plasma clean device transmission cleaning plasma is longer and causes cleaning efficiency to drop present in art
Low the problem of.
The embodiment of the present application uses following technical proposals：
A kind of PECVD device for possessing cleaning function, including：Chamber, is used for the gold of supporting substrate in the chamber
Belong to supporting table, in addition to：
The first metal dispersion of the first distance is preset above the metal supporting table and at a distance of the metal supporting table
Plate, and above the first metal dispersion plate and at a distance of the second gold medal of the default second distance of the first metal dispersion plate
Belong to dispersion plate, the first metal dispersion plate is provided with multiple through holes with the second metal dispersion plate；
Wherein, when in cleaning mode, the first metal dispersion plate is grounded with the metal supporting table, and described second
Metal dispersion plate connects the first radio-frequency power supply, and fluoro-gas enters the chamber and by the through hole in first metal point
Fall apart and cleaning free radical contained fluorine used is dissociated between the second metal dispersion plate.
Alternatively, when in depositional model, the first metal dispersion plate is connected with the second metal dispersion plate
Two radio-frequency power supplies, the metal supporting table ground connection, film forming gas enter the chamber and by the through hole in first gold medal
Deposition plasma gas used is dissociated between category dispersion plate and the metal supporting table.
Alternatively, the edge of the first metal dispersion plate is contacted with the inner wall insulation of the chamber, and is fixed on described
In chamber.
Alternatively, the edge of the second metal dispersion plate is contacted with the inner wall insulation of the chamber, and is fixed on described
In chamber or slidably set in the cavity.
Alternatively, in addition to：It is arranged on above the first metal dispersion plate and is dielectrically separated from plate；
The edge of the second metal dispersion plate is dielectrically separated from plate insulated contact with described, and is fixed on described be dielectrically separated from
On plate or slidably it is arranged on described be dielectrically separated from plate.
Alternatively, it is described to be dielectrically separated from plate, institute between the first metal dispersion plate and the second metal dispersion plate
The corresponding part in nip domain is provided with through hole.
Alternatively, the span of the default second distance is 300mil-2000mil.
Alternatively, the through hole in the first metal dispersion plate and the through hole mutual dislocation in the second metal dispersion plate
Set.
A kind of clean method of PECVD device, including：
The first metal dispersion plate in the chamber of PECVD device and metal supporting table are grounded, and the second metal is divided
Fall apart the first radio-frequency power supply of connection；
Vacuumize process is carried out to the chamber；
Fluoro-gas is filled with into the chamber of PECVD device, to cause the fluoro-gas in first metal dispersion
Cleaning free radical contained fluorine used is dissociated between plate and the second metal dispersion plate, free radical contained fluorine used in the cleaning passes through
Through hole on first metal dispersion plate and the second metal dispersion plate, which is diffused to, carries out cleaning treatment in chamber.
Alternatively, methods described also includes：
After cleaning treatment is completed, the first metal dispersion plate is connected second with the second metal dispersion plate and penetrated
Frequency power, and the metal supporting table is grounded；
To carrying out vacuumize process in the chamber；
Film forming gas are filled with into the chamber of PECVD device, to cause the film forming gas in first metal dispersion
Deposition plasma gas used, and the deposition film in the metal supporting table are formed between plate and the metal supporting table.
At least one above-mentioned technical scheme that the embodiment of the present application is used can reach following beneficial effect：
By setting the first metal dispersion plate and the second metal dispersion plate in the chamber of PECVD device, and by for
First metal dispersion plate, the second metal dispersion plate and metal supporting table connect different power supplys respectively, with PECVD device
Form cleaning plasma gas used in chamber, it is to avoid pipeline is utilized by remote plasma clean device in the prior art
The defect of plasma gas used is cleaned in conveying, and having evaded cleaning plasma gas used may be caused by pipeline
Gas loss, improves the utilization rate of cleaning plasma gas used, improves cleaning efficiency.Moreover, the present invention can be same
Do not realizing cleaning respectively in the same time in the chamber of PECVD device and into film process, improving the use effect of PECVD device
Rate.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen
Schematic description and description please is used to explain the application, does not constitute the improper restriction to the application.In the accompanying drawings：
Fig. 1 is the principle schematic cleaned in the prior art to PECVD device；
Fig. 2 a kind of possesses one of structural representation of PECVD device of cleaning function to be provided in an embodiment of the present invention；
Fig. 3 is the two of a kind of structural representation for the PECVD device for possessing cleaning function provided in an embodiment of the present invention；
Fig. 4 is a kind of rough schematic of PECVD device provided in an embodiment of the present invention；
Fig. 5 is a kind of clean method step schematic diagram of PECVD device provided in an embodiment of the present invention.
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described corresponding accompanying drawing.Obviously, described embodiment is only the application one
Section Example, rather than whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under the premise of creative work, belong to the scope of the application protection.
Below in conjunction with accompanying drawing, the technical scheme that each embodiment of the application is provided is described in detail.
Embodiment one
As shown in Fig. 2 being a kind of structural representation for the PECVD device for possessing cleaning function provided in an embodiment of the present invention
Figure, the PECVD device mainly includes：Chamber 21, is used for the metal supporting table 25 of supporting substrate in chamber 21；Wherein, chamber
The shape of room 21 is not limited, and can be typically rectangular box construction.
In addition, the PECVD device also includes：Positioned at the top of metal supporting table 25 and at a distance of metal supporting table 25 default first
First metal dispersion plate 27 of distance, and preset positioned at the top of the first metal dispersion plate 27 and at a distance of the first metal dispersion plate 27
Second metal dispersion plate 28 of second distance, the first metal dispersion plate 27 and the second metal dispersion plate 28 are provided with multiple through holes
H.As shown in Figure 2, from only existing in the prior art unlike film forming plasma generating area, the chamber of the PECVD device
21 are greatly classified into two regions by the first metal dispersion plate 27, the second metal dispersion plate 28 and metal supporting table 25, wherein,
Region between first metal dispersion plate 27 and the second metal dispersion plate 28 can be defined as cleaning plasma generating region, the
Region between one metal dispersion plate 27 and metal supporting table 25 can be defined as film forming plasma generating area.
When needing the PECVD device being set to cleaning mode, the first metal dispersion plate 27 connects with metal supporting table 25
Ground, the second metal dispersion plate 28 connects the first radio-frequency power supply R1, between the first metal dispersion plate 27 and the second metal dispersion plate 28
Produce electric field, fluoro-gas enter chamber 21 and by through hole H the first metal dispersion plate 27 and the second metal dispersion plate 28 it
Between cleaning plasma generating region be dissociated into cleaning free radical contained fluorine used, and the first metal dispersion plate 27 is supported with metal
Equipotentiality between platform 25, has no electric field, thus the film forming plasma generating area is at this moment and in the absence of the operation of deposition film,
Only it is that cleaning free radical contained fluorine used chemically reacts in chamber 21, realizes the cleaning treatment to chamber 21.
Referring now still to Fig. 2, the PECVD device for possessing cleaning function also includes：Air inlet positioned at the side of chamber 21
22, positioned at the opposite side of chamber 21 and the exhaust outlet 24 of the pump housing 23 is connected with, and, for supporting metal supporting table 25 and energy
Enough so that the support column 26 that metal supporting table 25 is moved up and down in chamber 21；Air inlet 22 can be located at the top of chamber 21
Portion, correspondingly, exhaust outlet 24 are located at the bottom of chamber 21, and the exhaust outlet 24 is typically connected with the pump housing 23 for vacuumizing, its
In, the type of the pump housing 23 is not limited.In addition, the support column 26 in the PECVD device can connect control unit, to realize support
Post 26 is moved in arrow direction, and then, it is ensured that the metal supporting table 25 for supporting substrate can be moved up and down；Specifically
Ground, the way of realization for the control unit that control support column 26 is moved is not limited, and can be mechanical lifting movement control
Mode.
Alternatively, in this application, because the region between the first metal dispersion plate 27 and metal supporting table 25 can determine
Justice is film forming plasma generating area, therefore, is being that chamber 21 carries out cleaning using cleaning plasma generating region
Afterwards, film-forming process can also be performed in chamber 21 using film forming plasma generating area.Specifically, when need by
When PECVD device is set to depositional model, the first metal dispersion plate 27 is connected the second radio-frequency power supply with the second metal dispersion plate 28
R2, metal supporting table 25 is grounded, and produces electric field between the first metal dispersion plate 27 and metal supporting table 25, film forming gas are by entering
Gas port 22 enters chamber 21 and the film forming plasma generating area between the first metal dispersion plate 27 and metal supporting table 25
It is dissociated into and deposits plasma gas used, and equipotentiality between the first metal dispersion plate 27 and the second metal dispersion plate 28, have no electricity
, thus the cleaning plasma generating region is at this moment and in the absence of cleaning operation, is only to produce area in film forming plasma
Domain carries out the operation of deposition film to the substrate surface in metal supporting table 25, realizes Film forming operations.
In embodiments of the present invention, by setting the first metal dispersion plate and the second gold medal in the chamber of PECVD device
Belong to dispersion plate, and by connecting different electricity respectively for the first metal dispersion plate, the second metal dispersion plate and metal supporting table
Source, to form cleaning plasma gas used in the chamber of PECVD device, it is to avoid pass through remote plasma in the prior art
Body cleaning device cleans the defect of plasma gas used using pipeline, has evaded cleaning plasma gas used and has passed through pipe
Road is conveyed and possible caused gas loss, is improved the utilization rate of cleaning plasma gas used, is improved cleaning efficiency.And
And, the present invention can not realize cleaning respectively and into film process, improve in the same time in the chamber of same PECVD device
The service efficiency of PECVD device.
Alternatively, in embodiments of the present invention, referring now still to shown in Fig. 2, edge and the chamber 21 of the first metal dispersion plate 27
Inner wall insulation contact, and be fixed in chamber 21.Due in the present invention, it is necessary to by chamber be greatly classified into two it is relative but
It is not the region definitely isolated, therefore, the edge of the first metal dispersion plate 27 needs to contact with the inwall of chamber 21, but examines
It is also metal material to consider chamber 21 general, short-circuit chamber during in order to avoid connecting radio-frequency power supply for the first metal dispersion plate 27
21, in the edge of the first metal dispersion plate 27 insulation sleeve can be set to ensure that the inner wall insulation with chamber 21 is contacted.
Alternatively, in embodiments of the present invention, the set-up mode of the second metal dispersion plate is more flexible, specifically there may be
Following two set-up modes：
Mode 1, shown in reference picture 2, the edge of the second metal dispersion plate 28 is contacted with the inner wall insulation of chamber 21, and fixed
In chamber 21 or slidably it is arranged in chamber 21.
Specifically, the second metal dispersion plate 28 could be arranged to it is similar with the first metal dispersion plate 27, correspondingly, second
The edge of metal dispersion plate 28 is contacted with the inner wall insulation of chamber 21；And the second metal dispersion plate 28 can be fixed on chamber 21
In, i.e., the inwall of chamber 21 is fixed on by welding or other clamping lock modes；Or, the second metal dispersion plate 28 is with slidably shape
State is arranged in chamber 21, i.e., the second metal dispersion plate 28 can be slided up and down in the inner wall surface of chamber 21, can specifically be led to
The mode for crossing slideway or mechanical elevating is realized.
Mode 2, shown in reference picture 3, the PECVD also includes in setting：It is arranged on the exhausted of the top of the first metal dispersion plate 27
Edge division board 29；The edge of second metal dispersion plate 28 is dielectrically separated from plate 29 with being dielectrically separated from the insulated contact of plate 29, and being fixed on
It is arranged on above or slidably and is dielectrically separated from plate 29.
Specifically, the second metal dispersion plate 28 is not a whole face, and is less than the plate of the cross section of chamber 21
Shape structure, and in order to avoid the second metal dispersion plate 28 is vacantly set, the second metal dispersion plate 28 can be arranged on absolutely
On edge division board 29, similarly, the second metal dispersion plate 28 can be fixed on and be dielectrically separated from plate 29, i.e., by welding or its
His clamping lock mode, which is fixed on, is dielectrically separated from the inner side of plate 29；Or, the second metal dispersion plate 28 is arranged on absolutely with slidably state
On edge division board 29, i.e., the second metal dispersion plate 28 can be slided up and down being dielectrically separated from the inner surface of plate 29, specifically can be with
Realized by way of slideway or mechanical elevating.
In aforesaid way 1 and mode 2, the second metal dispersion plate 28 is set to slidably, it is thus possible to according to
Process requirements extend adjustable parameter, for example, default second distance is adjusted by adjusting the position of the second metal dispersion plate 28, with
Optimize the PECVD and size, concentration, speed of plasma gas etc. used in the cleaning produced are set, be easy to carry out cleaning operation
Effectively control.
Referring now still to shown in Fig. 3, in order to ensure that it (is fluorine-containing etc. that fluoro-gas farthest is dissociated into free radical contained fluorine
Ionized gas), it is to avoid the region that fluoro-gas enters beyond cleaning plasma generating region from both sides, plate can be dielectrically separated from
29 extend to the top of chamber 21.
In embodiments of the present invention, in order to ensure produce cleaning of plasma gas preferably diffuse to the two of chamber 21
Side, will can be dielectrically separated from plate 29, the corresponding portion in folded region between the first metal dispersion plate 27 and the second metal dispersion plate 28
Set up separately and be equipped with through hole, be i.e. net region.
In embodiments of the present invention, the span for presetting second distance is 300mil-2000mil (mil).And preset
First distance can be set according to the size of chamber or the demand of technique, be generally fixed.
Alternatively, can be sufficiently into the chamber below the first metal dispersion plate in order to ensure to clean plasma gas used
The through hole mutual dislocation that room is carried out in through hole and the second metal dispersion plate in cleaning treatment, the first metal dispersion plate is set.
Below, the structure of PECVD device is illustrated with the example shown in Fig. 4, is can be achieved in the diagram comprising a kind of
The circuit that cleaning mode switches with depositional model both of which, and the circuit is only a kind of example, is not intended as implementation of the present invention
The restriction of example.
First metal dispersion plate 27 connects a single-pole double-throw switch (SPDT) S1 by wire, and switch S1 moved end can the company of being allocated to
Radio-frequency power supply RF2 one end b1 is met, ground connection one end a1 can also be allocated to；Second metal dispersion plate 28 connects a hilted broadsword by wire
Commutator S2, the switch S2 moved end can be allocated to connection radio-frequency power supply RF1 one end a2, can also be allocated to connection radio frequency electrical
Source RF2 one end b2；Metal supporting table 25 is grounded all the time.
When switching to cleaning mode, the switch S1 of the first metal dispersion plate 27 connection is allocated to a1, the second metal dispersion plate
28 are allocated to a2；
When switching to depositional model, the switch S1 of the first metal dispersion plate 27 connection is allocated to b1, the second metal dispersion plate
The switch S2 of 28 connections is allocated to b2.
In addition, the application can also be provided only with a radio-frequency power supply RF system, realized by designing on-off circuit pair
Different metal dispersion plate applies different radio frequency power supply RF purpose, wherein, the supply frequency of radio-frequency power supply RF systems is adjustable, with suitable
With different voltage requirements.
By the embodiment of the present invention, cleaning plasma gas used can be formed in the chamber of PECVD device, it is to avoid
Clean the defect of plasma gas used using pipeline by remote plasma clean device in the prior art, evade
Gas loss caused by cleaning plasma gas used is possible by pipeline, improves cleaning plasma gas used
Utilization rate, improves cleaning efficiency.Moreover, the present invention can respectively not realized in the same time in the chamber of same PECVD device
Clean and into film process, improve the service efficiency of PECVD device.
Embodiment two
Similarly, present invention also offers a kind of clean method of PECVD device, shown in reference picture 5, this method is mainly wrapped
Include：
Step 51：The first metal dispersion plate in the chamber of PECVD device and metal supporting table are grounded, and by second
Metal dispersion plate connects the first radio-frequency power supply.
Step 52：Vacuumize process is carried out to chamber.
Specifically, the pump housing of the exhaust ports in the chamber is opened, vacuumize process is carried out.
Step 53：Fluoro-gas is filled with into the chamber of PECVD device, to cause the fluoro-gas in first gold medal
Cleaning free radical contained fluorine used, fluorine-containing freedom used in the cleaning are dissociated between category dispersion plate and the second metal dispersion plate
Base is diffused to by the through hole on the first metal dispersion plate and the second metal dispersion plate and cleaning treatment is carried out in chamber.
Alternatively, the PECVD device can also realize film-forming process, specifically after cleaning treatment is carried out to chamber：
After cleaning treatment is completed, the first metal dispersion plate is connected the second radio frequency electrical with the second metal dispersion plate
Source, and the metal supporting table is grounded；
Vacuumize process is carried out to the chamber, that is, opens the pump housing of the exhaust ports in the chamber, is vacuumized
Processing；
The air inlet in the chamber is opened, film forming gas are filled with into the chamber of PECVD device, to cause the film forming
Gas forms deposition plasma gas used between the first metal dispersion plate and the metal supporting table, and in the gold
Belong to deposition film in supporting table.
It should be understood by those skilled in the art that, embodiments of the invention can be provided as method, system or computer program
Product.Therefore, the present invention can be using the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.Moreover, the present invention can be used in one or more computers for wherein including computer usable program code
The computer program production that usable storage medium is implemented on (including but is not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
The present invention is the flow with reference to method according to embodiments of the present invention, equipment (system) and computer program product
Figure and/or block diagram are described.It should be understood that can be by every first-class in computer program instructions implementation process figure and/or block diagram
Journey and/or the flow in square frame and flow chart and/or block diagram and/or the combination of square frame.These computer programs can be provided
The processor of all-purpose computer, special-purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce
A raw machine so that produced by the instruction of computer or the computing device of other programmable data processing devices for real
The device for the function of being specified in present one flow of flow chart or one square frame of multiple flows and/or block diagram or multiple square frames.
These computer program instructions, which may be alternatively stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that the instruction being stored in the computer-readable memory, which is produced, to be included referring to
Make the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or
The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that in meter
Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented processing, thus in computer or
The instruction performed on other programmable devices is provided for realizing in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in individual square frame or multiple square frames.
In a typical configuration, computing device includes one or more processors (CPU), input/output interface, net
Network interface and internal memory.
Internal memory potentially includes the volatile memory in computer-readable medium, random access memory (RAM) and/or
The forms such as Nonvolatile memory, such as read-only storage (ROM) or flash memory (flash RAM).Internal memory is computer-readable medium
Example.
Computer-readable medium includes permanent and non-permanent, removable and non-removable media can be by any method
Or technology come realize information store.Information can be computer-readable instruction, data structure, the module of program or other data.
The example of the storage medium of computer includes, but are not limited to phase transition internal memory (PRAM), static RAM (SRAM), moved
State random access memory (DRAM), other kinds of random access memory (RAM), read-only storage (ROM), electric erasable
Programmable read only memory (EEPROM), fast flash memory bank or other memory techniques, read-only optical disc read-only storage (CD-ROM),
Digital versatile disc (DVD) or other optical storages, magnetic cassette tape, the storage of tape magnetic rigid disk or other magnetic storage apparatus
Or any other non-transmission medium, the information that can be accessed by a computing device available for storage.Define, calculate according to herein
Machine computer-readable recording medium does not include temporary computer readable media (transitory media), such as data-signal and carrier wave of modulation.
It should also be noted that, term " comprising ", "comprising" or its any other variant are intended to nonexcludability
Comprising so that process, method, commodity or equipment including a series of key elements are not only including those key elements, but also wrap
Include other key elements being not expressly set out, or also include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that wanted including described
Also there is other identical element in process, method, commodity or the equipment of element.
Embodiments herein is the foregoing is only, the application is not limited to.For those skilled in the art
For, the application can have various modifications and variations.It is all any modifications made within spirit herein and principle, equivalent
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (10)
1. a kind of PECVD device for possessing cleaning function, including：Chamber, is used for the metal of supporting substrate in the chamber
Supporting table, it is characterised in that also include：
The first metal dispersion plate of the first distance is preset above the metal supporting table and at a distance of the metal supporting table, with
And the second metal point of second distance is preset above the first metal dispersion plate and at a distance of the first metal dispersion plate
Fall apart, the first metal dispersion plate is provided with multiple through holes with the second metal dispersion plate；
Wherein, when in cleaning mode, the first metal dispersion plate is grounded with the metal supporting table, second metal
Dispersion plate connects the first radio-frequency power supply, and fluoro-gas enters the chamber and by the through hole in the first metal dispersion plate
Cleaning free radical contained fluorine used is dissociated between the second metal dispersion plate.
2. equipment as claimed in claim 1, it is characterised in that
When in depositional model, the first metal dispersion plate is connected the second radio-frequency power supply with the second metal dispersion plate,
The metal supporting table ground connection, film forming gas enter the chamber and by the through hole in the first metal dispersion plate and institute
State and deposition plasma gas used is dissociated between metal supporting table.
3. equipment as claimed in claim 1, it is characterised in that the edge of the first metal dispersion plate is interior with the chamber
Wall insulated contact, and fix in the cavity.
4. the equipment as described in claim any one of 1-3, it is characterised in that the edge of the second metal dispersion plate with it is described
The inner wall insulation of chamber is contacted, and fixation is set in the cavity in the cavity or slidably.
5. the equipment as described in claim any one of 1-3, it is characterised in that also include：It is arranged on first metal dispersion
Plate is dielectrically separated from above plate；
The edge of the second metal dispersion plate is dielectrically separated from plate insulated contact with described, and is fixed on described be dielectrically separated from plate
Or slidably it is arranged on described be dielectrically separated from plate.
6. equipment as claimed in claim 5, it is characterised in that described to be dielectrically separated from plate, the first metal dispersion plate with
The folded corresponding part in region is provided with through hole between the second metal dispersion plate.
7. equipment as claimed in claim 1, it is characterised in that the span of the default second distance is 300mil-
2000mil。
8. equipment as claimed in claim 1, it is characterised in that through hole and second gold medal in the first metal dispersion plate
The through hole mutual dislocation belonged in dispersion plate is set.
9. a kind of clean method of PECVD device, it is characterised in that including：
The first metal dispersion plate in the chamber of PECVD device and metal supporting table are grounded, and by the second metal dispersion plate
Connect the first radio-frequency power supply；
Vacuumize process is carried out to the chamber；
Be filled with fluoro-gas into the chamber of PECVD device, with cause the fluoro-gas the first metal dispersion plate with
Cleaning free radical contained fluorine used is dissociated between the second metal dispersion plate, free radical contained fluorine used in the cleaning passes through first
Through hole on metal dispersion plate and the second metal dispersion plate, which is diffused to, carries out cleaning treatment in chamber.
10. method as claimed in claim 9, it is characterised in that methods described also includes：
After cleaning treatment is completed, the first metal dispersion plate is connected the second radio frequency electrical with the second metal dispersion plate
Source, and the metal supporting table is grounded；
Vacuumize process is carried out to the chamber；
Be filled with film forming gas into the chamber of PECVD device, with cause the film forming gas the first metal dispersion plate with
Deposition plasma gas used, and the deposition film in the metal supporting table are formed between the metal supporting table.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113066740A (en) * | 2021-03-26 | 2021-07-02 | 长江存储科技有限责任公司 | Semiconductor equipment and cleaning method |
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| CN101880867A (en) * | 2010-07-02 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma enhanced chemical vapor deposition device |
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| TW561196B (en) * | 2001-01-22 | 2003-11-11 | Anelva Corp | Cleaning method for CVD system |
| WO2004049421A1 (en) * | 2002-11-27 | 2004-06-10 | Tokyo Electron Limited | Method for cleaning substrate processing chamber |
| CN1638026A (en) * | 2004-01-07 | 2005-07-13 | 松下电器产业株式会社 | Substrate processing apparatus and cleaning method therefor |
| CN101333652A (en) * | 2007-06-29 | 2008-12-31 | 宝山钢铁股份有限公司 | Method for preparing SixOyFz coatings on organic precoated metal plate |
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Application publication date: 20170811 |