CN107017552A - Based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers - Google Patents
Based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers Download PDFInfo
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- CN107017552A CN107017552A CN201710384485.2A CN201710384485A CN107017552A CN 107017552 A CN107017552 A CN 107017552A CN 201710384485 A CN201710384485 A CN 201710384485A CN 107017552 A CN107017552 A CN 107017552A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
- H01S3/0623—Antireflective [AR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1621—Solid materials characterised by an active (lasing) ion transition metal cobalt
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Abstract
The present invention discloses a kind of based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, including pumping source, output coupling optical fiber, coupling focusing double lens, Nd3+:GYSGG crystal, Co2+:MgAl2O4Crystal and outgoing mirror, wherein, the pump light that pumping source is sent delivers to coupling by output coupling optical fiber and focuses on double lens, and focusing on double lens focusing by coupling enters Nd3+:GYSGG crystal；The Nd3+:The exiting side correspondence Co of GYSGG crystal2+:MgAl2O4The light incident side of crystal, and Co2+:MgAl2O4The light incident side of the exiting side correspondence outgoing mirror of crystal.Such a laser structure can realize that 1.3 mu m waveband dual-wavelength lasers are exported, and simple and compact for structure, price economy material benefit.
Description
Technical field
It is more particularly to a kind of to be based on Co the invention belongs to solid-state laser field2+:MgAl2O4Passive Q-adjusted 1.3 μm it is attached
Nearly dual wavelength Nd3+:GYSGG lasers.
Background technology
1.3 μm of laser are in optical fiber and transmit low dispersion and low-loss region, and water to the wave band of laser absorption coefficient compared with
Greatly, fiber optic communication and laser medicine field be can apply to.And 1.3 μm of laser can be combined with frequency doubling technology, obtain red
Laser is exported.Therefore, the laser of 1.3 mu m wavebands of research has important Practical significance.At present, laser crystal is such as：Nd:
YVO4、Nd:GdVO4And Nd:YAG etc. can obtain 1.3 μm of laser, but such laser largely belongs to 1.3 mu m wavebands
Single-wavelength operation.In addition to 1.3 μm of Single wavelengths, the pulse laser of 1.3 μm of wavelengths is in laser spectroscopy, laser thunder
Reach, the generation of THz ripples, there is prior application value in terms of laser medicine, increasingly cause scientific research personnel's in recent years
Note.
Nd3+:The full name of GYSGG crystal is the gadolinium-yttrium-scandium-gallium garnet of Nd ion doped, is formed by Czochralski grown.It is
The novel laser crystal invented by Chinese Academy of Sciences's Xi'an ray machine, with very good radioresistance characteristic, has potential in space
Application value.With traditional Nd:YAG crystal phases ratio, its fluorescent line is wider, fluorescence lifetime is longer, stimulated emission cross section more
It is small, the pulse width of compression pulse laser is more beneficial for, the single pulse energy and peak power of pulse laser is improved.It is most heavy
That want is Nd3+:The fluorescence spectrum of GYSGG crystal has multiple obvious emission peaks in 1.3 mu m wavebands, it is easy to can realize double wave
Long running, refers to document " Continuous-wave Nd:GYSGG laser around 1.3μm”(Laser
Phys.Lett.,9,491-495,2012)
Co2+:MgAl2O4The full name of crystal is the magnesium aluminate spinel for mixing cobalt ions, Co2+Have very wide in 1.3~1.5 mu m wavebands
Absorption band, very big absorption cross-section, the Excited-state Absorption loss of longer lifetime of excited state and very little.Co2+:MgAl2O4It is brilliant
Body is the optimal saturable absorber of human eye safe waveband, is satisfied while it is also that 1.3 mu m waveband laser devices are ideal
And absorber, refer to document " Eye-safe 1.55 μm of passively Q-switched Er, Yb:GdAl3(BO3)4diode-pumped laser”(Opt.Lett.,41,918-921,2016)
The content of the invention
The main object of the present invention, is to provide a kind of based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG
Laser, it can realize that 1.3 mu m waveband dual-wavelength lasers are exported, and simple and compact for structure, price economy material benefit.
The secondary objective of the present invention, is to provide a kind of based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG
Laser, it can mitigate fuel factor, reduce Nd3+:Limitation of the GYSGG crystal thermal lensing effect to laser output power.
In order to reach above-mentioned purpose, solution of the invention is：
One kind is based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, including pumping source, output coupling
Optical fiber, coupling focus on double lens, Nd3+:GYSGG crystal, Co2+:MgAl2O4Crystal and outgoing mirror, wherein, the pump that pumping source is sent
Pu light delivers to coupling by output coupling optical fiber and focuses on double lens, and focusing on double lens focusing by coupling enters Nd3+:GYSGG crystal；
The Nd3+:The exiting side correspondence Co of GYSGG crystal2+:MgAl2O4The light incident side of crystal, and Co2+:MgAl2O4The outgoing of crystal
The light incident side of side correspondence outgoing mirror.
Above-mentioned pumping source is semiconductor laser.
The output wavelength of above-mentioned semiconductor laser is 880nm or 808nm.
The numerical aperture 0.22 of above-mentioned output coupling optical fiber, 200 μm of fibre core.
Above-mentioned coupling focuses on double lens and is made up of two convex mirrors, and the sphere of two convex mirrors is oppositely arranged, two convex surfaces
The plane of mirror is coated with pump light 880nm high transmittance films respectively as light incident side and exiting side, the both side surface of two convex mirrors, burnt
Away from for 40mm.
The output end face of above-mentioned output coupling optical fiber is located at the focal position for focusing on coupling double lens light incident side.
Above-mentioned Nd3+:The incident side surface of GYSGG crystal is coated with 880nm, 1060nm anti-reflection film, 1342nm high-reflecting films；Outgoing
Side surface is coated with pump light 880nm, 1060nm, 1330nm anti-reflection film.
Above-mentioned Nd3+:GYSGG crystal is centrally located at the focal position that coupling focuses on double lens exiting side.
Above-mentioned Co2+:MgAl2O4The light incident side and exiting side of crystal are coated with 1330nm anti-reflection film, and 1330nm's is initial
Transmitance is 85%.
Above-mentioned Co2+:MgAl2O4The middle part correspondence Nd of the light incident side of crystal3+:The light carry-out bit of GYSGG crystal exiting side
Put.
The incident side surface of above-mentioned outgoing mirror is coated with 1060nm anti-reflection films, 1330nm reflectivity is 85%, exiting side table
Face is coated with 1330nm anti-reflection films.
The light incident side middle part of above-mentioned outgoing mirror and Co2+:MgAl2O4The radiation output position of crystal exiting side is corresponding.
After such scheme, the present invention utilizes Co2+:MgAl2O4The saturable absorption characteristic of crystal realize it is passive Q-adjusted,
Using Nd3+:GYSGG laser crystals realize that 1.3 mu m waveband dual wavelength (1321nm, 1336nm) laser are exported, and can be applied to laser
Ranging and fiber optic communication etc..
The present invention has following improve：
(1) Nd is used3+:GYSGG crystal, it is possible to achieve 1.3 mu m waveband dual-wavelength lasers are exported；
(2)Co2+:MgAl2O4Crystal can be reduced to 10ns as saturable absorber, pulse width, with acousto-optic Q modulation phase
Than structure is simpler compact, the more economical material benefit of price；
(3) using 880nm diode-end-pumpeds source, it can mitigate fuel factor using with band pump mode, reduce Nd3 +:Limitation of the GYSGG crystal thermal lensing effect to laser output power.
Brief description of the drawings
Fig. 1 is the structure chart of the present invention.
Embodiment
Below with reference to accompanying drawing, technical scheme and beneficial effect are described in detail.
As shown in figure 1, the present invention provides a kind of based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG laser
Device, including pumping source 1, output coupling optical fiber 2, coupling focusing double lens 3, Nd3+:GYSGG crystal 4, Co2+:MgAl2O4Crystal 5
With outgoing mirror 6, introduce separately below.
The pumping source 1 is semiconductor laser, output wavelength 880nm, power output 15W, fiber coupling output.
The numerical aperture 0.22 of the output coupling optical fiber 2,200 μm of fibre core.
The coupling focuses on double lens 3 and is made up of two parameter identical convex mirrors, and the sphere of two convex mirrors is relative to be set
Put, outwards, and focus is located on same horizontal line plane, and it is high that the both side surfaces of two convex mirrors is coated with pump light 880nm
Permeable membrane, focal length is 40mm, and the output end face of output coupling optical fiber 2 is located at the focal position for focusing on the coupling light incident side of double lens 3.
The Nd3+:The incident side surface of GYSGG crystal 4 is coated with 880nm, 1060nm anti-reflection film, 1342nm high-reflecting films；Go out
Penetrate side surface and be coated with pump light 880nm, 1060nm, 1330nm anti-reflection film.Nd3+The doping concentration 1-at.% of ion, length
10mm.Indium foil wraps up Nd3+:GYSGG crystal, semiconductor cooler cools and controls temperature (15 DEG C).Nd3+:GYSGG crystal 4
It is centrally located at the focal position that coupling focuses on the exiting side of double lens 3.
The Co2+:MgAl2O4The size of crystal 5 is 3 × 3 × 1mm3, thickness is 1mm, incident side surface and exiting side table
Face is coated with 1330nm anti-reflection film, and 1330nm initial transmission is 85%.Above-mentioned saturable absorber Co2+:MgAl2O4It is brilliant
The middle part correspondence Nd of the light incident side of body 53+:The radiation output position of the exiting side of GYSGG crystal 4.
The incident side surface of the outgoing mirror 6 is coated with 1060nm anti-reflection films, 1330nm reflectivity is about 85%, exiting side
Surface is coated with 1330nm anti-reflection films.The light incident side middle part of the outgoing mirror 6 and Co2+:MgAl2O4The light of the exiting side of crystal 5 is defeated
Out position is corresponding.
The present invention operation principle be：The 880nm pump lights that semiconductor laser is sent, it is defeated by output coupling optical fiber
Go out, and double lens focusing is focused on using coupling and enter Nd3+:GYSGG crystal；Under the excitation of pump light, laser crystal Nd3+:
GYSGG realizes population inversion, in laserresonator and Co2+:MgAl2O4Under the collective effect of saturable absorber, produce narrow
The 1.3 μm neighbouring double-wavelength pulse laser of pulsewidth, high-peak power.Because input mirror is coated with 1060nm high transmittance films, therefore can be with
Effectively suppress the resonance of 1060nm laser.
What time need explanation below：
1) present invention replaces actively Q-switched using passive Q-adjusted technology, and the simpler compact, price of structure is lower.Co2+:
MgAl2O4Crystal is as saturable absorber, and pulse width can be reduced to 10ns, compared with acousto-optic Q modulation, and structure is simpler
It is compact, the more economical material benefit of price.
2) laser crystal uses Nd3+:GYSGG crystal, it is possible to achieve 1.3 mu m waveband dual-wavelength lasers are exported；
3) 880nm diode-end-pumpeds source can use wavelength for 808nm semiconductor laser.
The technological thought of above example only to illustrate the invention, it is impossible to which protection scope of the present invention is limited with this, it is every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme each falls within the scope of the present invention
Within.
Claims (10)
1. one kind is based on Co2+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, it is characterised in that：Including pumping
Source, output coupling optical fiber, coupling focus on double lens, Nd3+:GYSGG crystal, Co2+:MgAl2O4Crystal and outgoing mirror, wherein, pump
The pump light that Pu source is sent delivers to coupling by output coupling optical fiber and focuses on double lens, and focusing on double lens focusing by coupling enters
Nd3+:GYSGG crystal；The Nd3+:The exiting side correspondence Co of GYSGG crystal2+:MgAl2O4The light incident side of crystal, and Co2+:
MgAl2O4The light incident side of the exiting side correspondence outgoing mirror of crystal.
2. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The pumping source is that output wavelength is 880nm or 808nm semiconductor laser.
3. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The coupling focuses on double lens and is made up of two convex mirrors, and the sphere of two convex mirrors is oppositely arranged, two convex mirrors it is flat
Face is coated with pump light 880nm high transmittance films respectively as light incident side and exiting side, the both side surface of two convex mirrors, and focal length is
40mm。
4. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The output end face of the output coupling optical fiber is located at the focal position for focusing on coupling double lens light incident side.
5. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The Nd3+:The incident side surface of GYSGG crystal is coated with 880nm, 1060nm anti-reflection film, 1342nm high-reflecting films；Exiting side table
Face is coated with pump light 880nm, 1060nm, 1330nm anti-reflection film.
6. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The Nd3+:GYSGG crystal is centrally located at the focal position that coupling focuses on double lens exiting side.
7. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The Co2+:MgAl2O4The light incident side and exiting side of crystal are coated with 1330nm anti-reflection film, 1330nm initial transmission
For 85%.
8. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The Co2+:MgAl2O4The middle part correspondence Nd of the light incident side of crystal3+:The radiation output position of GYSGG crystal exiting side.
9. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature exists
In：The incident side surface of the outgoing mirror is coated with 1060nm anti-reflection films, 1330nm reflectivity is 85%, and outgoing side surface is coated with
1330nm anti-reflection films.
10. Co is based on as claimed in claim 12+:MgAl2O4Passive Q-adjusted dual wavelength Nd3+:GYSGG lasers, its feature
It is：The light incident side middle part of the outgoing mirror and Co2+:MgAl2O4The radiation output position of crystal exiting side is corresponding.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107440795A (en) * | 2017-09-04 | 2017-12-08 | 哈尔滨工程大学 | A kind of feedback light thermal cure instrument of dual wavelength excitation |
Citations (2)
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|---|---|---|---|---|
| CN102637995A (en) * | 2012-04-25 | 2012-08-15 | 天津大学 | Dual-wavelength or multi-wavelength laser with adjustable power proportion |
| CN105048275A (en) * | 2015-08-25 | 2015-11-11 | 湖北捷讯光电有限公司 | Solid-state laser of human eye safety output |
-
2017
- 2017-05-26 CN CN201710384485.2A patent/CN107017552A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637995A (en) * | 2012-04-25 | 2012-08-15 | 天津大学 | Dual-wavelength or multi-wavelength laser with adjustable power proportion |
| CN105048275A (en) * | 2015-08-25 | 2015-11-11 | 湖北捷讯光电有限公司 | Solid-state laser of human eye safety output |
Non-Patent Citations (1)
| Title |
|---|
| HONG-YI LIN, ET AL.: "Nd:GYSGG laser at 1331.6 nm passively Q-switched by a Co:MgAl2O4 crystal", 《OPTICAL MATERIALS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107440795A (en) * | 2017-09-04 | 2017-12-08 | 哈尔滨工程大学 | A kind of feedback light thermal cure instrument of dual wavelength excitation |
| CN107440795B (en) * | 2017-09-04 | 2019-09-03 | 哈尔滨工程大学 | A kind of feedback light thermal cure instrument of dual wavelength excitation |
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