CN107010947A - Lead-free ferroelectric ceramics material with critical brusque-switch effect and preparation method thereof - Google Patents

Lead-free ferroelectric ceramics material with critical brusque-switch effect and preparation method thereof Download PDF

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CN107010947A
CN107010947A CN201710302249.1A CN201710302249A CN107010947A CN 107010947 A CN107010947 A CN 107010947A CN 201710302249 A CN201710302249 A CN 201710302249A CN 107010947 A CN107010947 A CN 107010947A
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critical
lead
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brusque
ferroelectric ceramics
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CN107010947B (en
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周昌荣
黎清宁
许积文
杨玲
袁昌来
曾卫东
陈国华
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Guilin University of Electronic Technology
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Abstract

The invention discloses a kind of Lead-free ferroelectric ceramics material with critical brusque-switch effect and preparation method thereof, material prescription is:Bi1/2Na1/2Ti0.85(Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3;Pass through B and Ti4+Compound ion (the Li of the identical chemical valence of ion1/4Nb3/4)4+, and different chemical valence compound ion (Zr1/2Zn1/2)3+, strictly with 1:2 ratio, replaces Ti at B4+Ion, produce different charged defects types, the arrangement of adjacent cell Defect Ordering is formed, the powered electricdomain (non-room or Lithium ions compensation effect) of electronics and hole offset-type is produced, thus the huge coping behavior of electric field induction of special critical switching effect occurs.The huge strain property that product is induced through experiment measurement with electric field is made, dependent variable is up to S%=0.47%, while having in critical switching electric fieldsE CThe huge strains of=56kV/cm occur, and the Δ in very narrow field regimeEComplete strain occurs for=2kV/cm, in critical zone, strain variation rateαUp to 2.8 × 103.These performances yet there are no report, can be in special applications.

Description

Lead-free ferroelectric ceramics material with critical brusque-switch effect and preparation method thereof
Technical field
The present invention relates to the Lead-free ferroelectric ceramics material of driving application, specifically a kind of ABO3Type perovskite structure, has Bismuth-sodium titanate (BNT) base Lead-free ferroelectric ceramics material of critical brusque-switch effect and preparation method thereof.
Background technology
Ferroelectric material is wide due to characteristics such as its excellent dielectricity, piezoelectricity, electrostriction and performance Modulatory characters It is general to be applied to the electronic components such as sensor, actuator, micro positioner, transducer, as intelligence structure (smart Structure), Micro Electro Mechanical System (MEMS), bionical device (smart devices), compound and gradient function device The core material of leading-edge fields such as (composite and functionally grade device).Leaded ferroelectric material tool There is excellent electric property, but unleaded environmental requirement forces people to explore lead-free with all strength.Bismuth-sodium titanate (BNT) base is unleaded Ceramics have stronger ferroelectricity, very with potentiality to be exploited, are to obtain one of material of extensive concern.Current BNT bases are unleaded The good piezoelectric performance of ceramics, electric field induce huge strain, and high energy-storage property all has been reported that, but with critical brusque-switch effect Electric field induce the BNT base ceramics of huge strain to have not been reported.
The content of the invention
It is an object of the invention to provide a kind of ABO3Type perovskite structure, induces huge strain, and have simultaneously with electric field Bismuth-sodium titanate (BNT) base Lead-free ferroelectric ceramics material of critical brusque-switch effect and preparation method thereof.
A kind of Lead-free ferroelectric ceramics material with critical brusque-switch effect of the present invention, is formulated and is:Bi1/2Na1/2Ti0.85 (Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3
Pass through B and Ti4+Compound ion (the Li of the identical chemical valence of ion1/4Nb3/4)4+, and different chemical valence compound ions (Zr1/2Zn1/2)3+, strictly with 1:2 ratio, replaces Ti at B4+Ion, produces different charged defects types, forms phase vincial faces Born of the same parents' Defect Ordering is arranged, and produces the powered electricdomain (non-room or Lithium ions compensation effect) of electronics and hole offset-type, thus is gone out The electric field of existing special critical switching effect induces huge coping behavior.
The preparation method of the above-mentioned Lead-free ferroelectric ceramics material with critical brusque-switch effect, comprises the following steps:
(1)According to Bi1/2Na1/2Ti0.85(Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3 Stoichiometry to weigh purity respectively equal For 99.99% raw material Bi2O3、Na2CO3、Li2CO3、Nb2O5、ZnO、ZrO2And TiO2, it is well mixed;
(2)Well mixed raw material is fitted into ball grinder, by abrading-ball of zirconium oxide, absolute ethyl alcohol be medium ball milling 12 hours, Separate abrading-ball, the infrared drying at 60 DEG C, in 835 DEG C in high alumina crucible(Insulation is synthesized for 8 hours;
(3)The powder progress secondary ball milling of synthesis infrared drying at 12 hours, 60 DEG C, then in 920 DEG C of insulations 4 in high alumina crucible Hour roasting;
(4)The PVA solution granulation of material quality 5% will be added in roasting powder;
(5)In 100Mpa cold isostatic compactions after granulation;
(6)The material of shaping sinters porcelain for 5 hours into 1100 DEG C of insulations, and thickness 0.4mm is worn on two sides, polishing, and then two sides is plated Product is made in silver electrode.
The huge strain property that products obtained therefrom is induced through experiment measurement with electric field, dependent variable has simultaneously up to S%=0.47% Have in critical switching electric fieldsE CThe huge strains of=56kV/cm occur, and the Δ in very narrow field regimeE=2kV/cm occurs complete Strain, in critical zone, strain variation rateαUp to 2.8 × 103.These performances yet there are no report, can be in special field Close application.
Brief description of the drawings
Fig. 1 is the strain curve figure of Lead-free ferroelectric ceramics material of the embodiment of the present invention.
Embodiment
Present invention is further described with reference to embodiment and accompanying drawing, but is not with the restriction of the present invention.
Embodiment
The Lead-free ferroelectric ceramics material with critical brusque-switch effect is prepared, step is as follows:
(1)According to Bi1/2Na1/2Ti0.85(Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3 Stoichiometry to weigh purity respectively equal For 99.99% raw material Bi2O3、Na2CO3、Li2CO3、Nb2O5、ZnO、ZrO2And TiO2, it is well mixed;
(2)Well mixed raw material is fitted into ball grinder, by abrading-ball of zirconium oxide, absolute ethyl alcohol be ball-milling medium, fully mix Close ball milling 12 hours(Fixed value still has scope), separate abrading-ball, by raw mixture at 60 DEG C infrared drying, then in high alumina Synthesized within 8 hours in 835 DEG C of insulations in crucible;
(3)Synthetic powder secondary ball milling infrared drying at 12 hours, 60 DEG C, then in high alumina crucible in 920 DEG C be incubated 4 hours Roasting;
(4)The PVA solution granulation of material quality 5% will be added in roasting powder;
(5)In 100Mpa cold isostatic compactions after granulation;
(6)The material of shaping sinters porcelain for 5 hours into 1100 DEG C of insulations, and thickness 0.4mm is worn on two sides, polishing, and then two sides is plated Product is made in silver electrode.
Reference picture 1, is made product by embodiment and carries out electrical property measurement, as a result as follows:

Claims (2)

1. a kind of Lead-free ferroelectric ceramics material with critical brusque-switch effect, it is characterised in that:The ceramic material formula is: Bi1/2Na1/2Ti0.85(Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3
2. the preparation method of the Lead-free ferroelectric ceramics material described in claim 1, it is characterised in that comprise the following steps:
(1)According to Bi1/2Na1/2Ti0.85(Li1/4Nb3/4)0.05(Zr1/2Zn1/2)0.10O3 Stoichiometry weigh purity respectively and be 99.99% raw material Bi2O3、Na2CO3、Li2CO3、Nb2O5、ZnO、ZrO2And TiO2, it is well mixed;
(2)Well mixed raw material is fitted into ball grinder, by abrading-ball of zirconium oxide, absolute ethyl alcohol be medium ball milling 12 hours, Abrading-ball is separated, the infrared drying at 60 DEG C is synthesized for 8 hours in high alumina crucible in 835 DEG C of insulations;
(3)The powder progress secondary ball milling of synthesis infrared drying at 12 hours, 60 DEG C, then in 920 DEG C of insulations 4 in high alumina crucible Hour roasting;
(4)The PVA solution granulation of material quality 5% will be added in roasting powder;
(5)In 100Mpa cold isostatic compactions after granulation;
(6)The material of shaping sinters porcelain for 5 hours into 1100 DEG C of insulations, and thickness 0.4mm is worn on two sides, polishing, and then two sides is plated Product is made in silver electrode.
CN201710302249.1A 2017-05-02 2017-05-02 Lead-free ferroelectric ceramic material with critical abrupt switching effect and preparation method thereof Expired - Fee Related CN107010947B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561090A (en) * 1994-07-19 1996-10-01 Korea Institute Of Science And Technology Dielectric ceramic composition for high frequencies and method for preparation of the same
CN101200369A (en) * 2007-07-27 2008-06-18 桂林电子科技大学 Titanium niobic zincic acid bismuth sodium system leadless piezo-electric ceramic and preparation method thereof
CN101857436A (en) * 2010-06-12 2010-10-13 中国地质大学(武汉) Potassium-sodium niobate base lead-free piezoelectric ceramic powder and preparation method thereof
CN103964844A (en) * 2014-05-21 2014-08-06 宁波大学 Dielectric energy storage ceramic material and preparation method thereof
CN104072129A (en) * 2014-04-18 2014-10-01 济南大学 B-position equivalent zirconium doped sodium bismuth titanate film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561090A (en) * 1994-07-19 1996-10-01 Korea Institute Of Science And Technology Dielectric ceramic composition for high frequencies and method for preparation of the same
CN101200369A (en) * 2007-07-27 2008-06-18 桂林电子科技大学 Titanium niobic zincic acid bismuth sodium system leadless piezo-electric ceramic and preparation method thereof
CN101857436A (en) * 2010-06-12 2010-10-13 中国地质大学(武汉) Potassium-sodium niobate base lead-free piezoelectric ceramic powder and preparation method thereof
CN104072129A (en) * 2014-04-18 2014-10-01 济南大学 B-position equivalent zirconium doped sodium bismuth titanate film
CN103964844A (en) * 2014-05-21 2014-08-06 宁波大学 Dielectric energy storage ceramic material and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
刘维良等: "《先进陶瓷工艺学》", 31 August 2004, 武汉理工大学出版社 *
汪济奎等: "《新型功能材料导论》", 31 October 2014, 华东理工大学出版社 *

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