CN1070010A - The domain twining removing method of potassium iodate crystal - Google Patents

The domain twining removing method of potassium iodate crystal Download PDF

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Publication number
CN1070010A
CN1070010A CN 91106528 CN91106528A CN1070010A CN 1070010 A CN1070010 A CN 1070010A CN 91106528 CN91106528 CN 91106528 CN 91106528 A CN91106528 A CN 91106528A CN 1070010 A CN1070010 A CN 1070010A
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China
Prior art keywords
crystal
domain
twining
pressure
twin
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Granted
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CN 91106528
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Chinese (zh)
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CN1023822C (en
Inventor
尹鑫
吕孟凯
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Shandong University
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Shandong University
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Priority to CN 91106528 priority Critical patent/CN1023822C/en
Publication of CN1070010A publication Critical patent/CN1070010A/en
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Publication of CN1023822C publication Critical patent/CN1023822C/en
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Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The present invention is KIO 3The crystalline domain twining removing method belongs to crystalline post-processing technology field.KIO 3Crystal is a nonlinear optical material, can make the higher optics of effect, and is complicated because of its electricdomain and twin, still do not have the method for domain twining removing at present, uses thereby limited this crystalline, and the inventive method can make KIO 3The crystal domain twining removing provides excellent material for this crystal is made into device and is applied.

Description

The domain twining removing method of potassium iodate crystal
KIO 3The method of crystalline detwinning and electricdomain belongs to crystal post-processing technology field.
KIO 3Crystal is noticeable in the world nonlinear optical material, and its powder laser frequency-doubled effect is higher than present widely used KDP, CDA, LiIO 3, LiN bO 3, crystal such as KTP, be one of crystal that effect is the highest in the present inorganic crystal material, the inside and outside a lot of scholars' (comprising states such as the U.S., the Soviet Union, West Germany, Australia) in native land have made number of research projects to this material.Because the difficulty of this crystal aspect growth, domain twining removing fails to make substantial progress always.1986, Shandong University's crystalline material grew and is of a size of 40 * 18 * 18mm 3Water white macrocrystal makes this crystalline growth obtain important breakthrough, but because the existence and the complicacy thereof of twin and electricdomain never find a kind of method of removing its twin and electricdomain, makes optics thereby limit it.
The present invention seeks to attempt to find a kind of KIO of removing 3Twin in the crystal and electricdomain make this crystal become the monocrystalline on no twin no farmland.
This inventive method is earlier with positive hexagonal prism KIO 3Crystal grinds and is processed into a rectangular parallelepiped, one group of corresponding edge is polished a pair of bottom surface of formation two parallel planess as this rectangular parallelepiped, the pair of parallel rib side of the former positive hexagonal prism that is kept is as the side of this rectangular parallelepiped, grinds at the crystal two ends and the both ends of the surface of perpendicular two parallel planess of rib as this rectangular parallelepiped.Silver slurry is as electrode on two coated on bottom side, and both ends of the surface can be led to light and observed after the fine grinding polishing.This rectangular parallelepiped crystal is placed transparent domain twining removing device, with 50 ℃ heat-up rate per hour it is risen between 235 ℃-250 ℃, constant temperature is after half an hour, and applying pressure in side surface direction is 2-15kg/cm 2Pressure, the high-voltage (complexity on crystal twin and electricdomain is decided) that on the bottom surface, adds 1000-4000V, when electric current increases between the 10-90mA suddenly, rapid depressurization reduces between the 10-50 μ A electric current to 100V-500V, is cooled to 190 ℃-210 ℃ naturally, by the logical light of this crystal one end face direction, when observing domain boundary and twin boundary from the other end and not existing, keep electric field and pressure constant, be cooled to room temperature with 25 ℃ speed per hour.As still can observe domain boundary and twin boundary the time, can be warming up between 235 ℃-250 ℃ again, repeat above process, till this crystal does not exist twin and electricdomain.For avoiding inhomogeneous cracking of this crystal heating, whole heating-cooling process can be placed in No. 300 methyl-silicone oils.
Utilize this inventive method to KIO 3Crystal does not observe electricdomain circle and twin boundary after carrying out the domain twining removing processing under polarizing microscope, along the logical light of end face direction, in the cross-polarized light interference device, can be observed two optical angles is 19.6 °, and does not have the crystal of domain twining removing not observe two optical angles
Embodiment 1. general-KIO 3Crystal grinds into behind the rectangular parallelepiped with 50 ℃ speed per hour and is warming up to 240 ℃, adds 5.8kg/cm after half an hour 2Pressure and 3500V voltage, electric current is uprushed to 40mA, reduces to 300V rapidly, make electric current become 20 μ A, be cooled to 200 ℃ naturally, do not existed, keep electric field and pressure constant through observing crystalline twin boundary and domain boundary, reduce to room temperature with 25 ℃ speed per hour, obtain not having the crystal on twin no farmland.
Embodiment 2. general-KIO 3Crystal is warming up to 238 ℃, adds 4kg/cm after half an hour 2The power of pressure and 1500V voltage, electric current is uprushed to 30mA, step-down is 150v then, keep-up pressure and voltage constant, cool to naturally after 205 ℃ again with 25 ℃ speed per hour and reduce to room temperature, the single crystal on the no twin no farmland of acquisition.

Claims (7)

1, a kind of domain twining removing method of potassium iodate crystal, belong to crystal post-processing technology field, it is characterized by this crystal is ground into rectangular parallelepiped, put into the domain twining removing device, be warming up to earlier between 235 ℃-250 ℃, constant temperature half an hour, at the side surface direction plus-pressure, direction adds high pressure in the bottom surface, when electric current is uprushed between 10-90mA, rapid depressurization, make electric current between 10-50 μ A, be cooled to naturally in 190 ℃ of-210 ℃ of scopes, when observation twin boundary and domain boundary do not exist, keep electric field and pressure constant, be cooled to room temperature once more, as still can observe twin boundary and domain boundary the time, can again crystal be warming up between 235 ℃-250 ℃, repeat above process, till crystal does not exist twin and electricdomain.
2, the method for claim 1 is characterized by heat-up rate and is per hour 50 ℃.
3, the method for claim 1, it is characterized by the rectangular parallelepiped side that grinds is the pair of parallel rib side that former positive six prismatic crystal are kept.
4, the method for claim 1, it is characterized by in the scope of adding high pressure on the bottom surface is between the 1000V-4000V.
5, the method for claim 1 is characterized by that to add pressure on side surface direction be 2-15Kg/cm 2Between pressure.
6, the method for claim 1 is characterized by rapid depressurization between the 100V-500V.
7, method as claimed in claim is characterized by the cooling rate of reducing to room temperature once more and is per hour 25 ℃.
CN 91106528 1991-08-31 1991-08-31 Domain twining removing method for potassium iodate crystal Expired - Fee Related CN1023822C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 91106528 CN1023822C (en) 1991-08-31 1991-08-31 Domain twining removing method for potassium iodate crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 91106528 CN1023822C (en) 1991-08-31 1991-08-31 Domain twining removing method for potassium iodate crystal

Publications (2)

Publication Number Publication Date
CN1070010A true CN1070010A (en) 1993-03-17
CN1023822C CN1023822C (en) 1994-02-16

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Application Number Title Priority Date Filing Date
CN 91106528 Expired - Fee Related CN1023822C (en) 1991-08-31 1991-08-31 Domain twining removing method for potassium iodate crystal

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CN (1) CN1023822C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101831699A (en) * 2009-03-13 2010-09-15 中国科学院福建物质结构研究所 Non-linear optical crystal of iodic acid barium niobate
CN105350079A (en) * 2015-11-24 2016-02-24 中国科学院福建物质结构研究所 Inorganic compound K2Au(IO3)5 with non-heart structure, and preparation method and application thereof
CN108004594A (en) * 2017-11-28 2018-05-08 中国科学院新疆理化技术研究所 Cesium iodate nonlinear optical crystal and its preparation method and application

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101831699A (en) * 2009-03-13 2010-09-15 中国科学院福建物质结构研究所 Non-linear optical crystal of iodic acid barium niobate
CN101831699B (en) * 2009-03-13 2014-03-05 中国科学院福建物质结构研究所 Non-linear optical crystal of iodic acid barium niobate
CN105350079A (en) * 2015-11-24 2016-02-24 中国科学院福建物质结构研究所 Inorganic compound K2Au(IO3)5 with non-heart structure, and preparation method and application thereof
CN105350079B (en) * 2015-11-24 2018-03-09 中国科学院福建物质结构研究所 Inorganic compound K with non-core structure2Au(IO3)5, preparation method and the usage
CN108004594A (en) * 2017-11-28 2018-05-08 中国科学院新疆理化技术研究所 Cesium iodate nonlinear optical crystal and its preparation method and application

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Publication number Publication date
CN1023822C (en) 1994-02-16

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