CN106994627A - Composition for polishing and its manufacture method and magnetic Ginding process - Google Patents

Composition for polishing and its manufacture method and magnetic Ginding process Download PDF

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Publication number
CN106994627A
CN106994627A CN201710214337.6A CN201710214337A CN106994627A CN 106994627 A CN106994627 A CN 106994627A CN 201710214337 A CN201710214337 A CN 201710214337A CN 106994627 A CN106994627 A CN 106994627A
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magnetic
composition
polishing
alkyl
particle
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CN201710214337.6A
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CN106994627B (en
Inventor
玉田修
玉田修一
森永均
菱田翔太
安井大祐
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Fujimi Inc
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Fujimi Inc
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Priority claimed from JP2017044074A external-priority patent/JP6220090B2/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/005Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to composition for polishing and its manufacture method and magnetic Ginding process.The present invention provides the composition for polishing and magnetic Ginding process that magnetic-particle is not susceptible to oxidation.Antioxidant, the He Shui of oxidation of the composition for polishing (1) containing magnetic-particle, for suppressing magnetic-particle.Magnetic field is applied to the composition for polishing (1) and the magnetic grain cluster (3) containing magnetic-particle is formed, makes magnetic grain cluster (3) contact grinding object thing (5) and grinding object thing (5) is ground.

Description

Composition for polishing and its manufacture method and magnetic Ginding process
Technical field
The present invention relates to composition for polishing and its manufacture method and magnetic Ginding process
Background technology
It is used as the Ginding process (such as minute surface finishing) finished with high accuracy to the surface of material, it is known to magnetic Ginding process.Magnetic Ginding process is to use in magnetic field to occur in magnetic fluid, magnetic viscosity fluid, magnetic fluid-mixing etc. Slurry obtained from nonmagnetic abrasive grains are mixed in the functional fluid of reaction as composition for polishing Ginding process, Magnetic field is applied to composition for polishing and magnetic grain cluster is formed, makes magnetic grain cluster as milling tool and contacts grinding object thing, thus enter Row grinding.
For example Patent Document 1 discloses using containing magnetic-particle, abrasive grains, for making the particle of colloid size steady The magnetic Ginding process of the composition for polishing of fixed stabilizer, the additive for adjusting viscosity and carrier fluid.In addition, specially The magnetic Ginding process for using particle decentralized mixed function fluid as composition for polishing is disclosed in sharp document 2.
But, for the composition for polishing disclosed in patent document 1,2, as magnetic-particle iron powder can because with water Contact etc. and aoxidized in composition for polishing, therefore have the grinding performance of composition for polishing through when reduce the problem of.In addition, Hydrogen can be produced due to the oxidation of iron powder, therefore there is also problem in terms of security.
Disclose to suppress the oxidation of magnetic-particle, be coated to the protective layer of polymeric material etc. in patent document 3,4 The technology on the surface of magnetic-particle, but its effect can not say fully.Further, since magnetic-particle is coated to protective layer, therefore also The problem of cost in need, time.
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Application Publication 2002-544318 publications
Patent document 2:Japanese Unexamined Patent Publication 2010-214505 publications
Patent document 3:Japanese Unexamined Patent Publication 2005-40944 publications
Patent document 4:Japanese Unexamined Patent Publication 2007-326183 publications
The content of the invention
Problems to be solved by the invention
Therefore, problem of the invention is, solving the problem of prior art as described above has, there is provided magnetic-particle It is not susceptible to the composition for polishing and its manufacture method and magnetic Ginding process of oxidation.
The solution used to solve the problem
In order to solve foregoing problems, the purport of the composition for polishing of a scheme of the invention is, containing being magnetic Grain, antioxidant, the He Shui of oxidation for suppressing magnetic-particle.
In addition, the purport of the magnetic Ginding process of the yet another aspect of the present invention is that it is grinding using said one scheme The magnetic Ginding process that mill is ground with composition to grinding object thing, the Ginding process includes following process:Ground to described Mill composition apply magnetic field and formed containing magnetic-particle magnetic grain cluster, make magnetic grain cluster contact grinding object thing and to grinding pair As thing is ground.
And then, the purport of the manufacture method of the composition for polishing of yet another aspect of the invention is, it is that manufacture is above-mentioned The method of the composition for polishing of one scheme, the manufacture method includes the 1st composition containing magnetic-particle and contains water The 2nd composition mixing process.
The effect of invention
The magnetic-particle of the composition for polishing of the present invention is not susceptible to oxidation.In addition, the composition for polishing of the present invention Manufacture method can obtain magnetic-particle be not susceptible to oxidation composition for polishing.And then, magnetic Ginding process of the invention Because magnetic-particle is not susceptible to oxidation, therefore, it is possible to the grinding finished with high accuracy to grinding object thing.
Brief description of the drawings
The figure of one embodiment of the magnetic Ginding process of Fig. 1 to illustrate the invention.
Description of reference numerals
1 composition for polishing
3 magnetic grain cluster
5 grinding object things
Embodiment
An embodiment of the invention is described in detail.It should be noted that following embodiment is shown One of the present invention, but the present invention is not limited to present embodiment.Furthermore it is possible to add various changes to following embodiment Or improve, the forms which are added various changes or improvement can also be included in the present invention.
The composition for polishing of present embodiment contain magnetic-particle, oxidation for suppressing magnetic-particle it is anti-oxidant Agent and water.If applying magnetic field to the composition for polishing of present embodiment, the magnetic-particle worked as abrasive particle is along magnetic strength Line is arranged in chain and forms magnetic grain cluster.Magnetic grain cluster works as milling tool, therefore the grinding group of present embodiment Compound can be used for magnetic Ginding process.That is, if while applying magnetic field to the composition for polishing of present embodiment while making magnetic grain Cluster and grinding object thing contact and relatively move it, then grinding (the example that can be finished with high accuracy to grinding object thing Such as minute surface finishing).
For example, using the composition for polishing of present embodiment can be used in the magnetic Ginding process of milling cutter.It is right In milling cutter, for example, form bar-shaped, possess the magnetic field generation section (such as permanent magnet, electromagnet) for producing magnetic field on top, and And possess the rotary driving part for rotating magnetic field generation section.The composition for polishing of present embodiment is set to be attached to milling cutter Top, after making to form magnetic grain cluster in composition for polishing in magnetic field generation section generation magnetic field, makes the top for being attached to milling cutter The composition for polishing contact grinding object thing at end.Then, while rotating magnetic field generation section by rotary driving part, while making grinding , can be to grinding by the sliding contact of magnetic grain cluster and grinding object thing when the top of cutter is relatively moved with grinding object thing Mill object is ground.
And then, the anti-oxidant of oxidation for suppressing magnetic-particle is contained due to the composition for polishing of present embodiment Agent, therefore magnetic-particle is not susceptible to the oxidation caused by water, oxygen, oxidant etc..Therefore, because the saturated magnetization of magnetic-particle Intensity be maintained it is higher, therefore magnetic grinding in composition for polishing be not susceptible to grind performance through when reduce.Need Bright, the mechanism is obtained by supposition, and the present invention is not by any restriction of above-mentioned mechanism.
In addition, for the composition for polishing of present embodiment, magnetic-particle is not susceptible to oxidation, therefore long-term preservation It is possibly realized.And then, the generation for occurring the hydrogen caused by the oxidation of magnetic-particle is not easy to, therefore the grinding of present embodiment is used Composition it is safe.
And then, by the effect of antioxidant, the aggregation of magnetic-particle when not applying magnetic field is suppressed, therefore for this The composition for polishing of embodiment, is not susceptible to the aggregation of magnetic-particle, even if being assembled, redispersibility is also excellent.
Hereinafter, in more detail to present embodiment composition for polishing, magnetic Ginding process etc. are illustrated.
1. on grinding object thing
Material to grinding object thing is not particularly limited, for example, can enumerate:Metal, alloy, oxide, resin etc.. As the concrete example of metal, it can enumerate:Iron, copper, aluminium, titanium, zirconium, ruthenium, tungsten etc..As the concrete example of alloy, it can enumerate:Aluminium Alloy, ferroalloy (stainless steel etc.), magnesium alloy, titanium alloy, copper alloy, evanohm, cobalt alloy etc..It is used as the tool of metal oxide Style, can be enumerated:Aluminum oxide, zirconium oxide, silica, magnesia, titanium oxide, gallium oxide, yittrium oxide, germanium oxide etc..To gold The form of category oxide is not limited, can also in addition to ceramic material, crystalline material (sapphire, crystal etc.), glass Occurs the material that oxidation is generated for aforementioned metal, foregoing alloy.As the concrete example of resin, it can enumerate:Super Engineering is moulded Material, such as polyphenylene sulfone resins (PPSU), polyphenylene sulfide (PPS), polyether-ether-ketone resin (PEEK), polyamide-imide resin (PAI).Particularly preferred alloy, metal oxide among these.Alternatively, it is also possible to include the grinding objects of a variety of materials Thing, for example, can occur the grinding pair that oxidation forms metal oxide for a part (such as surface) for metal or alloy As thing.
2. on magnetic-particle
As magnetic-particle, for example, it can enumerate:The particle being made up of hard magnetic material, soft magnetic material.As by The particle that soft magnetic material is constituted, can enumerate ferromagnetic particle, paramagnetic particle.Material to magnetic-particle is not special Limit, for example, can enumerate:Iron, nickel, cobalt and their oxide (iron oxide such as magnet body), their nitride, it Alloy.Alternatively, it is also possible to use the magnetic-particle for including the rare earth metals such as samarium, neodymium, cerium.Among these, from magnetic it is larger, From the viewpoint of processing easily, preferably iron, nickel, cobalt and their oxide, their alloy.
It should be noted that magnetic-particle can be used singly or in combination of two or more.In addition, at this In invention, magnetic refers to sense magnetic field, for example, refer to the property being attracted to a magnet.
Average 1 particle diameter of magnetic-particle is preferably less than 200 μm, more preferably less than 150 μm.Average 1 particle diameter is At less than 200 μm, magnetic-particle is dispersed excellent in composition for polishing.In addition, average 1 particle diameter of magnetic-particle is excellent Elect more than 0.01 μm, more preferably more than 1 μm as.When average 1 particle diameter is more than 0.01 μm, there can be sufficient magnetic.
In addition, for average 1 particle diameter of magnetic-particle, in the situation for the finishing grinding for especially paying attention to surface quality Under, preferably less than 15 μm, more preferably less than 10 μm, more preferably less than 5 μm.If magnetic-particle is average 1 time Particle diameter is such scope, then can suppress the cut of grinding object thing and obtain smooth surface.In addition, paying attention to processing effect In the case of the coarse-fine processing grinding of rate or coarse-fine processing/middle finishing grinding, preferably more than 10 μm, more preferably 20 μm Above, more preferably more than 50 μm.If average 1 particle diameter of magnetic-particle is such scope, can be with very High efficiency is ground.It should be noted that average 1 particle diameter of magnetic-particle can for example be based on determining by BET method The specific surface area of magnetic-particle calculate.Alternatively, it is also possible to be measured by dynamic light scattering method.
Formerly implement and carry out paying attention to finishing grinding of surface quality etc. after the middle finishing grinding for paying attention to processing efficiency Point multiple stages be ground in the case of, the magnetic-particle that average 1 particle diameter is different can be used in each stage.
The content of magnetic-particle in the composition for polishing of present embodiment is preferably below 80 mass %, more preferably Below 60 mass %.When the content of magnetic-particle is below 80 mass %, the stability for ensuring composition for polishing, stream can be played The effect of dynamic property and the maintenance grinding precision thus brought.In addition, the magnetic-particle in the composition for polishing of present embodiment Content be preferably more than 10 mass %, more preferably more than 20 mass %.When the content of magnetic-particle is more than 10 mass %, Improvement grinding rate, the effect of surface quality can be played.
3. on antioxidant
Also antioxidant is added in common composition for polishing, but the situation of common composition for polishing is in order at suppression The purpose of the oxidation of grinding object thing processed and add antioxidant.On the other hand, in the present invention, it is in order at suppression magnetic-particle Oxidation purpose and add antioxidant.Therefore, to suppressing the species of the effective antioxidant of oxidation in grinding of the invention It is different from being in common composition for polishing with composition, the antioxygen of the oxidation for suppressing metal grinding object thing Agent is unsuitable for the composition for polishing of the present invention sometimes.
Magnetic-particle dissolves or produced gas etc. because of oxidation sometimes.Therefore, it can oxidation by magnetic-particle, Dissolving or the generation etc. of gas and the level for learning the effect of the antioxidant added in composition for polishing.In the present invention, Antioxidant magnetic-particle adsorption or react, so as to suppress the oxidation, dissolving, gas of magnetic-particle Produce etc..
, for example can be with as long as the oxidation that can suppress magnetic-particle is just not particularly limited for the species of antioxidant Enumerate:Alkenylsuccinic derivatives, dipyridyl derivatives, phenanthroline derivative, triazole derivative, benzotriazole derivatives, And do not have the amine of carbon-to-carbon multiple bond in molecule.
Alkenylsuccinic derivatives can include the compound shown in following formula (1), (2) or (3).
The R of compound shown in above-mentioned formula (1)1And R2Hydrogen atom or straight-chain or branched are represented independently of one another Alkenyl of the carbon number below 20.Wherein, R1And R2It is asynchronously hydrogen atom.When the carbon number of alkenyl is more than 20, there is antioxidant in water Dissolubility reduction tendency.When carbon number is less than 4, the cost increase of the manufacturing process of antioxidant, it is difficult to realize economic life Production, therefore R1And R2Carbon number lower limit preferably 4.Specifically, as preferred alkenyl, it can enumerate:Pentenyl, hexenyl, Heptenyl, octenyl, nonenyl, decene base, undecenyl, dodecenyl succinic, tridecylene base, tetradecene base, 15 Carbene base, hexadecene base, heptadecene base, vaccenic acid base, 19 carbene bases, eicosylene base, tertiary hexenyl, 2- ethyls Hexenyl, 2,4,6- trimethyls heptenyl, 2,4,6,8- tetramethyl nonenyls etc..
The X of compound shown in above-mentioned formula (1)1Represent independently of one another hydrogen atom or cation (such as sodium ion, potassium from The cation of the amine such as the metal ions such as son or ammonium ion, monoethanol ammonium ion, quaternary ammonium ion).X1For the feelings of ion (cation) Under condition, X1With reference to COO bases be also ion (anion).
The R of compound shown in above-mentioned formula (2)11And R14Hydrogen atom or straight-chain or branched are represented independently of one another Alkenyl of the carbon number below 20.Wherein, R11And R14It is asynchronously hydrogen atom.When the carbon number of alkenyl is more than 20, there is antioxidant The tendency of dissolubility reduction in water.When carbon number is less than 4, the cost increase of the manufacturing process of antioxidant, it is difficult to realize warp The production of Ji, therefore R11And R14Carbon number lower limit preferably 4.Specifically, alkenyl preferably and the change shown in above-mentioned formula (1) The R of compound1And R2Situation it is identical.
R12And R13Alkenyl, the hydroxyl alkane of alkyl, carbon number below 10 of hydrogen atom, carbon number below 10 are represented independently of one another Base, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)n-CH2CH2) or polyoxypropylene base (- (CH OH2CHCH3O)m- CH2CHCH3OH).The n of above-mentioned polyoxyethylene groups represents the average addition molal quantity of oxyethylene group, is more than 1 and less than 19.On The m for stating polyoxypropylene base represents the average addition molal quantity of oxypropylene group, is more than 1 and less than 19.
Wherein, in order to dissolubility, dispersiveness of the compound imparting in water shown in above-mentioned formula (2), preferably R12And R13 At least one of be hydroxy alkyl, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)n-CH2CH2OH) or polyoxypropylene base (- (CH2CHCH3O)m-CH2CHCH3OH)。
More preferably R12And R13In any one be hydroxy alkyl or hydroxyalkenyl group, more preferably hydroxyl of the carbon number below 5 Alkyl.The easiness obtained from raw material, the hydroxy alkyl of carbon number 2 or 3 is optimal.Hydroxy alkyl can be straight chain It is any number of in shape, branched.The number for the hydroxyl that hydroxy alkyl, hydroxyalkenyl group have can be 1, or 2 More than.
The X of compound shown in above-mentioned formula (2)11Represent hydrogen atom or cation (metal such as sodium ion, potassium ion from The cation of the amine such as son or ammonium ion, monoethanol ammonium ion, quaternary ammonium ion).X11In the case of ion (cation), X11Institute With reference to COO bases also be ion (anion).
The R of compound shown in above-mentioned formula (3)31And R36Hydrogen atom or straight-chain or branched are represented independently of one another Alkenyl of the carbon number below 20.Wherein, R31And R36It is asynchronously hydrogen atom.When the carbon number of alkenyl is more than 20, there is antioxidant to exist The tendency of dissolubility reduction in water.When carbon number is less than 4, the cost increase of the manufacturing process of antioxidant, it is difficult to realize economic Production, therefore R31And R36Carbon number lower limit preferably 4.Specifically, alkenyl preferably and the chemical combination shown in above-mentioned formula (1) The R of thing1And R2Situation it is identical.
R32、R33、R34And R35Represent independently of one another alkenyl of the alkyl, carbon number below 10 of hydrogen atom, carbon number below 10, Hydroxy alkyl, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)r-CH2CH2) or polyoxypropylene base (- (CH OH2CHCH3O)s- CH2CHCH3OH).The r of above-mentioned polyoxyethylene groups represents the average addition molal quantity of oxyethylene group, is more than 1 and less than 19.On The s for stating polyoxypropylene base represents the average addition molal quantity of oxypropylene group, is more than 1 and less than 19.
Wherein, in order to dissolubility, dispersiveness of the compound imparting in water shown in above-mentioned formula (3), preferably R32、R33、 R34And R35At least one of be hydroxy alkyl, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)r-CH2CH2) or polyoxy third OH Alkenyl (- (CH2CHCH3O)s-CH2CHCH3OH)。
More preferably R32、R33、R34And R35In any one be hydroxy alkyl or hydroxyalkenyl group, more preferably carbon number 5 with Under hydroxy alkyl.The easiness obtained from raw material, the hydroxy alkyl of carbon number 2 or 3 is optimal.Hydroxy alkyl can be with To be any number of in straight-chain, branched.The number for the hydroxyl that hydroxy alkyl, hydroxyalkenyl group have can be 1, can also For more than 2.
As the concrete example of the alkenylsuccinic derivatives shown in above-mentioned formula (1), it can enumerate:Pentenyl butanedioic acid, oneself Alkenyl succinic acid, heptenyl succinic acid, ocentyl succinic, nonenyl succinic acid, decenyl succinic acid, undecenyl amber Acid, dodecenyl succinic acid, tridecylene base butanedioic acid, tetradecenyl succinic acid, 15 octadecenyl succinics acid, 16 carbon Alkenyl succinic acid, heptadecene base butanedioic acid, octadecenyl succinic acid, 19 octadecenyl succinics acid, eicosylene base amber Acid, tertiary hexenyl succinic acid, 2- ethyl hexyls alkenyl succinic acid, 2,4,6- trimethyls heptenyl succinic acid, 2,4,6,8- tetramethyls Nonenyl succinic acid or their salt.
As the concrete example of the alkenylsuccinic derivatives shown in above-mentioned formula (2), it can enumerate:Double (the 2- hydroxyl second of N, N- Base) pentenyl succinamic acid, N, N- double (2- hydroxyethyls) hexenyl succinamic acid, N, double (2- hydroxyethyls) heptene of N- Base succinamic acid, N, N- double (2- hydroxyethyls) octenyl succinic amic acid, N, double (2- hydroxyethyls) the nonenyl ambers of N- Amic acid, N, N- double (2- hydroxyethyls) decenyl succinic amic acid, N, double (2- hydroxyethyls) the undecenyl succinyls of N- Amino acid, N, N- double (2- hydroxyethyls) dodecenyl succinic amic acid, N, double (2- hydroxyethyls) the tridecylene base ambers of N- Amic acid, N, N- double (2- hydroxyethyls) tetradecenyl succinic amic acid, N, double (2- hydroxyethyls) the 15 carbene base ambers of N- Amber amic acid, N, N- double (2- hydroxyethyls) hexadecenyl succinic amic acid, N, double (2- hydroxyethyls) the heptadecene bases of N- Succinamic acid, N, N- double (2- hydroxyethyls) octadecenyl succinic amic acid, N, double (2- hydroxyethyls) 19 carbenes of N- Base succinamic acid, N, double (2- hydroxyethyls) the eicosylene base succinamic acids of N-, N, double (3- hydroxypropyls) pentenyls of N- Succinamic acid, N, N- double (2- hydroxypropyls) octenyl succinic amic acid, N, double (3- hydroxypropyls) octenyl succinyls of N- Amino acid, N, N- double (3- hydroxypropyls) dodecenyl succinic amic acid, N, double (3- hydroxypropyls) 15 octadecenyl succinics of N- Amic acid, N- (2- hydroxyethyls) pentenyl succinamic acid, N- (2- hydroxyethyls) octenyl succinic amic acid, N- (2- hydroxyls Base ethyl) dodecenyl succinic amic acid, the octadecenyl succinic amic acids of N- (2- hydroxyethyls) 15, N- (3- hydroxypropyls) Pentenyl succinamic acid, N- (2- hydroxypropyls) octenyl succinic amic acid, N- (3- hydroxypropyls) octenyl succinic acid amides Acid, N- (3- hydroxypropyls) dodecenyl succinic amic acid, the octadecenyl succinic amic acids of N- (3- hydroxypropyls) 15, N, N- Double (polyoxyethylene) octenyl succinic amic acids, N, double (polyoxypropylene) the octenyl succinic amic acids of N-, N, double (the polyoxy second of N- Alkene) dodecenyl succinic amic acid, N, double (polyoxypropylene) the dodecenyl succinic amic acids of N-, N, double (methyl) octenes of N- Base succinamic acid, N, double (ethyl) the octenyl succinic amic acids of N-, N- (ethyl) octenyl succinic amic acid.
As the concrete example of the alkenylsuccinic derivatives shown in above-mentioned formula (3), it can enumerate:Double (the 2- hydroxyl second of N, N- Base) pentenyl succinamide, N, N- double (2- hydroxyethyls) hexenyl succinamide, N, double (2- hydroxyethyls) the heptenyl ambers of N- Amber acid amides, N, N- couples of (2- hydroxyethyls) octenyl succinic acid amides, N, N- double (2- hydroxyethyls) nonenyl succinamide, N, N- Double (2- hydroxyethyls) decenyl succinic acid amides, N, N- double (2- hydroxyethyls) undecenyl succinamide, N, double (the 2- hydroxyls of N- Base ethyl) dodecenyl succinic acid amides, N, double (2- hydroxyethyls) the tridecylene base succinamides of N-, N, double (the 2- hydroxyls of N- Ethyl) tetradecenyl succinic acid amides, N, N- double (2- hydroxyethyls) 15 octadecenyl succinic acid amides, N, double (the 2- hydroxyl second of N- Base) hexadecenyl succinic acid amides, N, double (2- hydroxyethyls) the heptadecene base succinamides of N-, N, N- is double (2- hydroxyethyls) Octadecenyl succinic acid amides, N, N- double (2- hydroxyethyls) 19 octadecenyl succinic acid amides, N, double (the 2- hydroxyethyls) two of N- Ten octadecenyl succinic acid amides, N, N- double (3- hydroxypropyls) pentenyl succinamide, N, double (2- hydroxypropyls) the octenyl ambers of N- Amber acid amides, N, N- double (3- hydroxypropyls) octenyl succinic acid amides, N, double (3- hydroxypropyls) the dodecenyl succinic acid amides of N-, N, N- double (3- hydroxypropyls) 15 octadecenyl succinic acid amides, N- (2- hydroxyethyls) pentenyl succinamide, N- (2- hydroxyl second Base) octenyl succinic acid amides, N- (2- hydroxyethyls) dodecenyl succinic acid amides, the carbene base ambers of N- (2- hydroxyethyls) 15 Amber acid amides, N- (3- hydroxypropyls) pentenyl succinamide, N- (2- hydroxypropyls) octenyl succinic acid amides, N- (3- hydroxyls third Base) octenyl succinic acid amides, N- (3- hydroxypropyls) dodecenyl succinic acid amides, the carbene base ambers of N- (3- hydroxypropyls) 15 Amber acid amides, N, double (polyoxyethylene) the octenyl succinic acid amides of N-, N, double (polyoxypropylene) the octenyl succinic acid amides of N-, N, N- are double (polyoxyethylene) dodecenyl succinic acid amides, N, double (polyoxypropylene) the dodecenyl succinic acid amides of N-, N, N, N '-three (2- Hydroxyethyl) octenyl succinic acid amides, N, N, N ', N '-four (2- hydroxyethyls) octenyl succinic acid amides, N, N, N ', N '-four (2- hydroxypropyls) octenyl succinic acid amides, N, N, N ', N '-four (3- hydroxypropyls) octenyl succinic acid amides.
In order to improve dissolubility, dispersiveness of the alkenylsuccinic derivatives in water, above-mentioned formula (1), (2) institute can be used The X for the compound shown1、X11、X21It is used as cation (metal ion such as sodium ion, potassium ion or ammonium ion, monoethanol ammonium The cation of the amine such as ion, quaternary ammonium ion).In such a case, it is possible to by being compounded X in composition for polishing1、X11、X21 For the compound of hydrogen atom, the alkaline matter for occurring neutralization reaction with carboxyl is added thereto reacts it, by X1、X11、X21 It is converted into metal ion or cation.
As alkaline matter, for example, it can enumerate:The hydroxide of the alkali metal such as sodium hydroxide, potassium hydroxide.In addition may be used To enumerate:MEA, diethanol amine, triethanolamine, ethylenediamine, diethylenetriamines, trien, methylamine, diformazan Amine, trimethylamine, ethamine, diethylamine, triethylamine, n-butylamine, di-n-butylamine, tri-n-butylamine, tert-butylamine, ethylenediamine, N- ethyl second Diamines, diethylenetriamines, trien, 1,2- diaminopropanes, TMAH, cyclohexylamine, N, N, N ', N '-tetramethylethylenediamine, pyrrolidines, piperidines, piperazine, pyridine, pyrazine, 1,2- cyclohexanediamine, 1,4- cyclohexanediamine, single isopropanol Amine, diisopropanolamine (DIPA), triisopropanolamine, N, N- double (2- hydroxyethyls)-N- cyclo-hexylamines, N, N, N ', (the 2- hydroxyl second of N '-four Base) ethylenediamine, N, N, N ', N '-four (2- hydroxyethyls) -1,6- hexamethylene diamines, dicyclohexyl amine, cyclohexyldi, Morpholine, 2-amino-2-methyl-1-propanol, monoethanol diisopropanolamine (DIPA), N, N- dimethylethanolamines, N, N- diethyl ethylene diamines Deng amine.
Dipyridyl derivatives can contain the compound shown in following formula (4).
It should be noted that the R of the compound shown in above-mentioned formula (4)41、R42、R43、R44、R45、R46、R47And R48Each Independently represent hydrogen atom, alkyl, alkenyl, phenyl, hydroxyl, amino, carboxyl, sulfo group, nitro, halogen group, hydroxy alkyl, hydroxyl Base alkenyl, alkyl amino, alkenyl amino, carboxyalkyl, carboxyalkenyl, alkyl sulfobetaines, alkenyl sulfo group, alkyl nitro, alkenyl nitre Base, alkoxy, acetyl group, alkylether radicals, alkenyl ether, haloalkyl, haloalkenyl group.
As the concrete example of dipyridyl derivatives, it can enumerate:2,2 '-bipyridyl, 4,4 '-dimethanol -2,2 '-connection pyrrole Pyridine, 5,5 '-dicarboxylic acids -2,2 '-bipyridyl, 3- hydroxyls -4,4 '-dimethyl -2,2 '-bipyridyl, 6- methoxyl groups -2,2 '-connection pyrrole Pyridine, 3,3 '-dihydroxy -2,2 '-bipyridyl, 6,6 '-dihydroxy -2,2 '-bipyridyl, 3- carboxyls -2,2 '-bipyridyl, 4- carboxyls - 2,2 '-bipyridyl, -2,2 '-bipyridyl of 6- carboxyls, the bromo- 2,2 '-bipyridyls of 6-, the chloro- 2,2 '-bipyridyls of 6-, 6,6 '-diaminourea - The 2,2 '-dipyridyl derivatives such as 2,2 '-bipyridyl, 6,6 '-dimethyl -2,2 '-bipyridyl, 6,6 '-two sulfones -2,2 '-bipyridyl And its salt.
Phenanthroline derivative can include the compound shown in following formula (5).
It should be noted that the R of the compound shown in above-mentioned formula (5)51、R52、R53、R54、R55、R56、R57And R58Each Independently represent hydrogen atom, alkyl, alkenyl, phenyl, hydroxyl, amino, carboxyl, sulfo group, nitro, halogen group, hydroxy alkyl, hydroxyl Base alkenyl, alkyl amino, alkenyl amino, carboxyalkyl, carboxyalkenyl, alkyl sulfobetaines, alkenyl sulfo group, alkyl nitro, alkenyl nitre Base, alkoxy, acetyl group, alkylether radicals, alkenyl ether, haloalkyl, haloalkenyl group.
As the concrete example of phenanthroline derivative, it can enumerate:The adjacent phenodiazines of the chloro- 1,10- of 1,10- phenanthrolenes, 2- Miscellaneous phenanthrene, the chloro- 1,10- phenanthrolenes of 5-, the bromo- 1,10- phenanthrolenes of 2-, the bromo- 1,10- phenanthrolenes of 3-, 5- bromo- 1, The bromo- 1,10- phenanthrolenes of 10- phenanthrolenes, 3,8- bis-, 2,9- dimethyl -1,10- phenanthrolenes, 2,9- dimethyl - The adjacent phenodiazine of 4,7- diphenyl -1,10- phenanthrolenes, 3,4,7,8- tetramethyl -1,10- phenanthrolenes, 5- amino -1,10- Miscellaneous phenanthrene, the adjacent diaza of 4,7- dihydroxy -1,10- phenanthrolenes, 3,4,7,8- tetrahydroxy -1,10- phenanthrolenes, 1,10- Phenanthrene -2,9- dicarboxylic acids, 5- nitro -1,10- phenanthrolene -2,9- dicarboxylic acids, 1,10- phenanthrolene -2,9- disulfonic acid, 4, 7- diphenyl -1,10- phenanthrolene -2,9- disulfonic acid, 1,10- phenanthrolene -5,6- diketone and its salt and its water Compound.
As triazole derivative, compound and its salt with triazole structure can be enumerated.As specific example, for example It can enumerate:1,2,3- triazoles, 1,2,4- triazoles, 1- methyl isophthalic acids, 2,4- triazoles, 3- nitro -1,2,4- triazoles, 1H-1,2,4- Triazole -3- mercaptan, 4- (1,2,4- triazol-1-yls) phenol, methyl isophthalic acid H-1,2,4- triazole -3- carboxylates, 1,2,4- triazoles -3- Carboxylic acid, 1,2,4- triazole -3- carboxylate methyl esters, 3- amino -1H-1,2,4- triazoles, 3- amino -5- benzyl -4H-1,2,4- triazoles, 3- amino -5- methyl -4H-1,2,4- triazoles, 3- amino -1,2,4- triazole -5- mercaptan, 3,5- diaminostilbenes H-1,2,4- tri- The bromo- 5- nitros -1,2,4- triazoles of azoles, 3-, 4- amino -1,2,4- triazoles, 4- amino -3,5- dipropyl -4H-1,2,4- triazoles, 4- amino -3,5- dimethyl -4H-1,2,4- triazoles, 4- amino -3,5- diheptyl -4H-1,2,4- triazoles, 5- methyl isophthalic acids, 2,4- Triazole -3,4- diamines.
As benzotriazole derivatives, compound and its salt with BTA structure can be enumerated.As specific Example, for example, can enumerate:BTA, 2,2 '-[[(methyl isophthalic acid H- BTA -1- bases) methyl] imino group] diethanols, 5- chlorobenzotriazoles, 1H- BTA -1- methanol, 5- methyl isophthalic acid H- BTAs, 5- nitrobenzene and triazolams, 5- carboxyl benzos Triazole, 5- amino BTA, 5,6- dimethyl -1H- BTAs, 1- (1 ", 2 '-dicarboxyethyl) BTA, 1- [N, Double (hydroxyethyl) amino methyls of N-] BTA, 1- [double (hydroxyethyl) amino methyls of N, N-] -5- methylbenzotrazoles, 1- [double (hydroxyethyl) amino methyls of N, N-] -4- methylbenzotrazoles.
, for example can be comprising shown in following formula (6), (7), (8), (9) as the amine for not having carbon-to-carbon multiple bond in molecule Compound.
It should be noted that the R of the compound shown in above-mentioned formula (6)61、R62、R63Be each independently hydrogen atom, alkyl, Or hydroxy alkyl, or it is each independently carboxyalkyl, phosphonic acids alkyl or sulfonic alkyl.R61、R62、R63Can with carbon atom that This is bonded and forms cyclic structure (cyclic alkane).Wherein, R61、R62、R63It is hydrogen atom when this three is different.R61、R62、R63Institute The carbochain having can be straight-chain, or branched.If R61、R62、R63At least one of be hydroxy alkyl, then magnetic The antioxidant effect of property particle is uprised, therefore preferably.The number for the hydroxyl that hydroxy alkyl has can be 1, or 2 More than individual.
As the concrete example of the compound shown in above-mentioned formula (6), for example, it can enumerate:Methylamine, dimethylamine, trimethylamine, second Amine, diethylamine, triethylamine, n-butylamine, tert-butylamine, dibutylamine, tri-butylamine, MEA, diethanol amine, triethanolamine, Single Propanolamine, 3- methylamino -1,2- propane diols, diisopropanolamine (DIPA), nitrilo trimethylene phosphonic acids, NTA, 3, The propionic acid of 3 ', 3 "-nitrilo- three, pyrrolidines, 1- crassitudes, 2- crassitudes, 1- ethyl pyrrolidines, 2- N-ethyl pyrrole Ns Alkane, 1- (2- hydroxyethyls) pyrrolidines, 2- (hydroxymethyl) pyrrolidines, 2- (2- hydroxyethyls) -1- crassitudes, piperidines, 3,5- lupetidines, 2- ethyl piperidines, pipecoline, 4- methyl piperidines, 1- piperidine ethanols, 1- ethanol -4- propanol piperidines, The peaceful alcohol of 3- quinolines, cyclohexylamine, N, N- double (2- hydroxyethyls) isopropanolamine, N, N- dimethylethanolamines.
The R of compound shown in above-mentioned formula (7)71、R72、R73、R74Hydrogen atom, alkyl or hydroxyl alkane are represented independently of one another Base.R71、R72、R73、R74Can be so that carbon atom bonds together and forms cyclic structure (cyclic alkane).Chemical combination shown in above-mentioned formula (7) The R of thing75Represent carbon number more than 2 and less than 10 alkylidene.R71、R72、R73、R74、R75The carbochain being had can for straight-chain, It is any number of in branched, ring-type.If R71、R72、R73、R74At least one of be hydroxy alkyl, then magnetic-particle is anti-oxidant Effect is uprised, therefore preferably.The number for the hydroxyl that hydroxy alkyl has can be 1, or more than 2.
As the concrete example of the compound shown in above-mentioned formula (7), for example, it can enumerate:Ethylenediamine, N- methyl ethylenediamines, N- Ethylethylenediamine, N, N- dimethyl-ethylenediamines, N, N- diethyl ethylenediamines, N, N '-diethyl ethylenediamine, N, N, N ', N '-tetramethyl Base ethylenediamine, 1,2- diaminopropanes, 2- methyl isophthalic acids, 2- propane diamine, N- (2- hydroxyethyls) ethylenediamine, N, N '-bis- (2- hydroxyls Ethyl) ethylenediamine, N- (2- hydroxypropyls) ethylenediamine, N, N, N ', N '-four (2- hydroxyethyls) ethylenediamine, 1,3- diaminourea third Alkane, 2,2- dimethyl -1,3- propane diamine, 2- methyl isophthalic acids, 3- propane diamine, N- methyl isophthalic acids, 3- propane diamine, N, N- dimethyl -1,3- Propane diamine, N, N- diethyl -1,3- propane diamine, N, N- double (2- hydroxyethyls) -1,3- diaminopropanes, piperazine, 1- methyl piperazines Piperazine, 1- ethyl piperazidines, N, the double (2- of N '-dimethyl piperazine, 1- (2- hydroxyethyls) piperazine, 4- methyl piperazine -1- ethanol, 1,4- Hydroxyethyl) piperazine, 1,2- cyclohexanediamine, 1,4- cyclohexanediamine.
The R of compound shown in above-mentioned formula (8)81、R82、R83、R84、R85Hydrogen atom, alkyl or hydroxyl are represented independently of one another Base alkyl.R81、R82、R83、R84、R85Can be so that carbon atom bonds together and forms cyclic structure (cyclic alkane).Above-mentioned formula (8) institute The R for the compound shown86、R87Represent carbon number more than 2 and less than 10 alkylidene.R81、R82、R83、R84、R85、R86、R87Had Carbochain can be straight-chain, branched, ring-type in it is any number of.If R81、R82、R83、R84、R85At least one of be hydroxyl Alkyl, then the antioxidant effect of magnetic-particle uprise, therefore preferably.The number for the hydroxyl that hydroxy alkyl has can be 1, It can also be more than 2.
As the concrete example of the compound shown in above-mentioned formula (8), for example, it can enumerate:Diethylenetriamines, N, N, N ', N ", N "-five methyl diethylentriamine, N, N, N ', N ", N "-five (2- hydroxypropyls) diethylenetriamines, 3,3 '-diaminourea Dipropylamine, N- (3- aminopropyls)-N- methyl isophthalic acids, 3- propane diamine, N '-[3- (dimethylamino) propyl group]-N, N- dimethyl- 1,3- propane diamine, the azepine hendecanes of 2,6,10- trimethyls -2,6,10- three, N- (2- amino-ethyls) piperazine, the azepines of 1,4,7- tri- Cyclononane, N, N, N ', N ", N "-five (2- hydroxypropyls) diethylenetriamines.
The R of compound shown in above-mentioned formula (9)91、R92、R93、R94、R95、R96Independently of one another represent hydrogen atom, alkyl, Or hydroxy alkyl.R91、R92、R93、R94、R95、R96Can be so that carbon atom bonds together and forms cyclic structure (cyclic alkane).It is above-mentioned The R of compound shown in formula (9)97、R98、R99Represent carbon number more than 2 and less than 10 alkylidene.R91、R92、R93、R94、R95、 R96、R97、R98、R99The carbochain being had can be any number of in straight-chain, branched, ring-type.If R91、R92、R93、R94、 R95、R96At least one of be hydroxy alkyl, then the antioxidant effect of magnetic-particle is uprised, therefore preferably.Hydroxy alkyl is had The number of some hydroxyls can be 1, or more than 2.
As the concrete example of the compound shown in above-mentioned formula (9), for example, it can enumerate:Trien, N, N, N ', N ", N " ', N " '-hexamethyl trien, 1,4- double (3- aminopropyls) piperazine, Cyclens.
Alkenylsuccinic derivatives, dipyridyl derivatives, phenanthroline derivative, triazole derivative, BTA derive Also alkenyl succinic acid, 2,2 '-bipyridyl, 1,10- phenanthrolenes, triazole, BTA are included in thing.Antioxidant can be single Solely it is used singly, or in combination of two or more kinds.
The content of antioxidant in the composition for polishing of present embodiment is preferably below 5 mass %, is more preferably 1 Below quality %.When the content of antioxidant is below 5 mass %, the surface and maintenance that can play protection grinding object thing are ground Grind the effect of speed.In addition, the content of the antioxidant in the composition for polishing of present embodiment is preferably 0.01 mass % Above, more preferably more than 0.1 mass %.The content of antioxidant be more than 0.01 mass % when, magnetic-particle it is anti-oxidant Excellent effect.
4. on water
The composition for polishing of present embodiment contain liquid medium as by magnetic-particle, antioxidant etc. it is each into The decentralized medium or solvent dispersed or dissolved.Species to liquid medium is not particularly limited, and can enumerate water, organic solvent Deng, from explosion-proof countermeasure, reduce environmental pressure from the viewpoint of, preferably comprise water.From the resistance for suppressing the effect to other each compositions From the viewpoint of hindering, the water of impurity is not preferably contained as far as possible.Specifically, preferably impurity is being eliminated using ion exchange resin The pure water, ultra-pure water or distilled water of foreign matter are eliminated after ion by filter.
5. on nonmagnetic abrasive grains
The composition for polishing of present embodiment can also contain nonmagnetic abrasive grains.If composition for polishing contains Nonmagnetic abrasive grains, then when forming magnetic grain cluster to composition for polishing application magnetic field, abrasive grains and magnetic-particle Magnetic grain cluster, therefore grinding performance, the grinding rate raising of the composition for polishing of present embodiment, and grinding pair are formed together As the surface quality of the surface to be polished of thing becomes better.
Species to abrasive grains is not particularly limited, for example, can enumerate:Inorganic particle, organic granular, organic-inorganic Composite particles.As the concrete example of inorganic particle, it can enumerate:By silica, aluminum oxide, ceria, titanium dioxide etc. Particle, silicon nitride particle, silicon-carbide particle, the boron nitride particle of metal oxide formation., can as the concrete example of organic granular To enumerate polymethyl methacrylate (PMMA) particle.Abrasive grains can be used alone, can also be applied in combination 2 kinds with On.Further, it is possible to use commercially available product, can also use composite.Among above-mentioned abrasive grains, more preferably silica, oxidation Aluminium.
And then, abrasive grains can implement surface modification.Implementing the abrasive grains of surface modification can for example pass through The metals such as aluminium, titanium, zirconium or their oxide are mixed with abrasive particle, the metals such as aluminium, titanium, zirconium or the oxide-doped of them is arrived The surface of abrasive particle;Organic acid is immobilized on the surface of abrasive particle to obtain.It is special among the abrasive grains for implementing surface modification Not You Xuanshi immobilization have the colloidal silica of organic acid.
Immobilization of the organic acid on the surface of colloidal silica for example can be by making the chemical functional groups key of organic acid Close on the surface of colloidal silica to carry out.It will not only be realized by making colloidal silica and organic acid simply coexist Immobilization of the organic acid on colloidal silica.If a kind of sulfonic acid as organic acid is immobilized in into colloidal silica On silicon, then it can for example pass through " Sulfonic acid-functionalized silica through quantitative Method described in oxidation of thiol groups ", Chem.Commun.246-247 (2003) is carried out.It is specific and Speech, makes 3-mercaptopropyi trimethoxy silane etc. have the silane coupler of sulfydryl with after colloidal silica coupling, using peroxide Change hydrogen by sulfhydryl oxidase, it is hereby achieved that in the surface immobilized colloidal silica for having sulfonic acid.
Or, if carboxylic acid is immobilized on colloidal silica, for example, it can pass through " Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”,Chemistry Letters,3,228-229 (2000) method described in is carried out.Specifically, the silane coupler containing photoreactivity 2- p-Nitrobenzyls and colloidal state two are made After silica coupling, light irradiation is carried out, it is hereby achieved that the surface immobilized colloidal silica for having a carboxylic acid.
Alternatively, it is also possible to use such disclosed in Japanese Unexamined Patent Publication 4-214022 publications, addition basic aluminium salt or alkali Property zirconates and the cationic silica manufactured.
Average 1 particle diameter of abrasive grains is preferably less than 100 μm, more preferably less than 50 μm.Average 1 particle diameter is At less than 100 μm, magnetic-particle is settled in the preservation of the composition for polishing of pulp-like, also easy redisperse. In addition, average 1 particle diameter of abrasive grains be preferably more than 5nm, more preferably more than 10nm, more preferably 50nm with On.If average 1 particle diameter of abrasive grains is such scope, efficiently grinding object thing can be ground.
In the case where paying attention to the finishing grinding of surface quality, average 1 particle diameter of abrasive grains is preferably 1000nm Below, below 500nm, more preferably below 300nm are more preferably.If average 1 particle diameter of abrasive grains is so Scope, then can not only realize efficient grinding, and can further suppress to be ground using composition for polishing Cut is produced on the surface of grinding object thing after mill.
In addition, in the case where paying attention to the middle finishing grinding of processing efficiency, average 1 particle diameter of abrasive grains is preferably More than 1 μm, more preferably more than 5 μm, more preferably more than 10 μm.If average 1 particle diameter of abrasive grains is so Scope, then can be ground with very high efficiency.
Average 1 particle diameter of abrasive grains is calculated for example based on the specific surface area of the abrasive grains determined by BET method. Alternatively, it is also possible to be measured by dynamic light scattering method.
Formerly implement and carry out paying attention to finishing grinding of surface quality etc. after the middle finishing grinding for paying attention to processing efficiency Point multiple stages be ground in the case of, the abrasive grains that average 1 particle diameter is different can be used in each stage.
The content of abrasive grains in the composition for polishing of present embodiment is preferably below 40 mass %, more preferably Below 20 mass %.When the content of abrasive grains is below 40 mass %, the stability for ensuring composition for polishing, stream can be played The effect of dynamic property and the maintenance grinding precision thus brought.In addition, the abrasive grains in the composition for polishing of present embodiment Content be preferably more than 1 mass %, more preferably more than 5 mass %., can when the content of abrasive grains is more than 1 mass % Playing improves grinding rate, the effect of surface quality.
6. the pH on composition for polishing
The pH of the composition for polishing of present embodiment is not particularly limited.Wherein, can according to the species of antioxidant To be set to more than 5, more than 7 can also be set to.In addition, kinds of the pH of the composition for polishing of present embodiment according to antioxidant Class can be set to be less than 14, can also be set to less than 12.PH is not likely to produce magnetic-particle for the composition for polishing of the scope Aggregation, efficiently can be ground to grinding object thing.It should be noted that using situation of the iron powder as magnetic-particle Under, the pH of composition for polishing is more preferably more than 5 and less than 12, more preferably more than 7 and less than 12.
The pH of composition for polishing can be adjusted by adding pH adjusting agent.In order to which the pH of composition for polishing is adjusted To desired value, the pH adjusting agent used as needed can be any number of in acid and alkali, alternatively, it is also possible to be inorganization It is any number of in compound and organic compound.
For the concrete example of the alkali as pH adjusting agent, it can enumerate:The hydroxide of alkali metal or its salt, alkaline-earth metal Hydroxide or its salt, quaternary ammonium hydroxide or its salt, ammonia, amine etc..
As the concrete example of alkali metal, potassium, sodium etc. can be enumerated.In addition, as the concrete example of alkaline-earth metal, can enumerate Calcium, strontium etc..And then, as the concrete example of salt, it can enumerate:Carbonate, bicarbonate, sulfate, acetate etc..And then, make For the concrete example of quaternary ammonium, tetramethyl-ammonium, tetraethyl ammonium, tetrabutylammonium etc. can be enumerated.
As quaternary phosphonium hydroxides ammonium compounds, comprising quaternary ammonium hydroxide or its salt, as concrete example, it can enumerate:Tetramethyl Ammonium hydroxide, tetraethyl ammonium hydroxide, TBAH etc..
And then, as the concrete example of amine, it can enumerate:Methylamine, dimethylamine, trimethylamine, ethamine, diethylamine, triethylamine, second Diamines, MEA, N- (beta-aminoethyl) monoethanolamine, hexamethylene diamine, diethylenetriamines, trien, nothing Water piperazine, piperazine hexahydrate, 1- (2- amino-ethyls) piperazine, N methyl piperazine, guanidine etc..
For the acid as pH adjusting agent, it can enumerate:Inorganic acid, organic acid.It is used as the concrete example of inorganic acid, Ke Yiju Go out:Sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, phosphoric acid etc..In addition, as the concrete example of organic acid, can enumerate: Formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-Methyl Butyric Acid, n-caproic acid, 3,3- acid dimethyls, 2 Ethylbutanoic acid, 4- methylpents Sour, positive enanthic acid, 2 methyl caproic acid, caprylic acid, 2 ethyl hexanoic acid, benzoic acid, glycolic, salicylic acid, glyceric acid, oxalic acid, the third two The carboxylic acids such as acid, butanedioic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, Organic sulfuric acid such as methanesulfonic acid, ethyl sulfonic acid, isethionic acid etc..These pH adjusting agents can be used alone, and can also combine makes Use two or more.
7. the electrical conductivity on composition for polishing
Electrical conductivity to the composition for polishing of present embodiment is not particularly limited, preferably below 20mS/cm, more preferably Below 10mS/cm, further preferred below 5mS/cm.When electrical conductivity is such scope, magnetic-particle is less susceptible to aoxidize, Therefore, it is possible to the life-span of further extension composition for polishing.Electrical conductivity can be by the salinization that is added in composition for polishing Species, addition of compound etc. are further controlled.
8. on other additives
In the composition for polishing of present embodiment can as needed so that add oxidant (for example contain halogen atom Oxidant), complexing agent, anticorrosive metal agent, surfactant, water soluble polymer, preservative, other additions such as mould inhibitor Agent.Hereinafter, other additives are illustrated.
(1) on oxidant
Oxidant can be included in the composition for polishing of present embodiment.Species to oxidant is not particularly limited, As an example, it can enumerate:Hydrogen peroxide, peracetic acid, percarbonate, carbamide peroxide, perchlorate, persulfate etc..But It is, in order to which the content for suppressing the oxidant in the oxidation of magnetic-particle, the composition for polishing of present embodiment is preferably 10 matter Measure below %, more preferably below 5 mass %.Moreover, in the case where using iron powder as magnetic-particle, composition for polishing Further preferably contain substantially no oxidant.
Refer at least it is intended that it does not contain oxidant it should be noted that containing substantially no oxidant.Therefore, herein The concept of the described composition for polishing for containing substantially no oxidant can be derived from raw material, system comprising inevitably containing Method etc. is micro, and (such as the molar concentration of the oxidant in composition for polishing is 0.0005 mole/below L, preferably 0.0001 rubs You following, more preferably 0.00001 mole/below L, particularly preferred 0.000001 mole/below L) oxidant grinding group Compound.
(2) on anticorrosive metal agent
Anticorrosive metal agent can be contained in the composition for polishing of present embodiment.In order to suppress the corruption of grinding object thing Erosion, by adding anticorrosive metal agent, can prevent the dissolving of metal.By using anticorrosive metal agent, grinding can be suppressed The deterioration of the surface roughness on the surface of object etc..
Workable anticorrosive metal agent is not particularly limited, preferably hetero ring type compound.To in hetero ring type compound First number of heterocycle be not particularly limited.In addition, hetero ring type compound can be monocyclic compound, or with fused rings Polycyclic compound.Anticorrosive metal agent can be used singly or in combination of two or more.In addition, anti-corrosion of metal Erosion agent can use commercially available product, can also use composite.And then, can also use to have prevents magnetic-particle oxidation effectiveness Anticorrosive.
As the concrete example for the heterocyclic compound that can serve as anticorrosive metal agent, it can enumerate:Azole compounds, pyrazoles Compound, imidazolium compounds, triazole compounds, tetrazole compound, pyridine compounds, pyrazine compound, pyridazine compound, benzazole Compound, indolizine compounds, benzazolyl compounds, iso-indoles compound, indazole compound, purine compound, quinolizine compound, quinoline Quinoline compound, isoquinoline compound, naphthyridine compounds, phthalazine compound, quinoxaline compounds, quinazoline compound, cinnolines Compound, buterizine compound, thiazolium compounds, isothiazole compounds, oxazole compounds, isoxazole compounds, furazan chemical combination The nitrogen-containing heterocycle compounds such as thing.
If enumerating more specifically example, as the example of pyrazole compound, it can enumerate:1H- pyrazoles, 4- nitros -3- Pyrazole carboxylic acid, 3,5- pyrazole carboxylic acids, 3- amino-5-phenyls pyrazoles, 5- amino -3- Phenylpyrazoles, 3,4,5- tribromos pyrazoles, 3- ammonia Base pyrazoles, 3,5- dimethyl pyrazoles, 3,5- dimethyl -1- hydroxymethylpyrazolcompounds, 3- methylpyrazoles, 1- methylpyrazoles, 3- amino - 5- methylpyrazoles, 4- amino-pyrazoles simultaneously chloro- 1H- pyrazolos [3,4-D] pyrimidine of [3,4-d] pyrimidine, Allopurinol, 4-, 3,4- dihydroxies Base -6- methylpyrazoles simultaneously (3,4-B)-pyridine, 6- methyl isophthalic acid H- pyrazolos [3,4-b] pyridine -3- amine etc..
As the example of imidazolium compounds, it can enumerate:Imidazoles, 1- methylimidazoles, 2-methylimidazole, 4-methylimidazole, 1,2- dimethyl pyrazoles, 2-ethyl-4-methylimidazole, 2 isopropyl imidazole, benzimidazole, 5,6- dimethylbenzimidazoles, 2- Aminobenzimidazole, 2-Chlorobenzimidazole, 2- tolimidazoles, 2- (1- ethoxys) benzimidazole, 2- hydroxybenzimidazoles, 2-Phenylbenzimidazole, 2,5- dimethylbenzimidazoles, 5- tolimidazoles, 5- nitrobenzimidazoles, 1H- purine etc..
As the example of triazole compounds, it can enumerate:1,2,3- triazoles, 1,2,4- triazoles, 1- methyl isophthalic acids, 2,4- triazoles, Methyl isophthalic acid H-1,2,4- triazole -3- carboxylates, 1,2,4- triazole -3- carboxylic acids, 1,2,4- triazole -3- carboxylic acid methyls, 1H-1,2,4- Triazole -3- mercaptan, 3,5- diaminostilbene H-1,2,4- triazoles, 3- amino -1,2,4- triazole -5- mercaptan, 3- amino -1H-1,2, 4- triazoles, 3- amino -5- benzyl -4H-1,2,4- triazoles, 3- amino -5- methyl -4H-1,2,4- triazoles, 3- nitros -1,2,4- The bromo- 5- nitros -1,2,4- triazoles of triazole, 3-, 4- (1,2,4- triazol-1-yls) phenol, 4- amino -1,2,4- triazoles, 4- amino - 3,5- dipropyl -4H-1,2,4- triazoles, 4- amino -3,5- dimethyl -4H-1,2,4- triazoles, 4- amino -3,5- diheptyls - 4H-1,2,4- triazoles, 5- methyl isophthalic acids, 2,4- triazole -3,4- diamines, 1H- BTAs, I-hydroxybenzotriazole, 1- aminobenzenes And the chloro- 1H- BTAs of triazole, 1- carboxyl benzotriazoles, 5-, 5- nitro -1H- BTAs, 5- carboxyl -1H- BTAs, 5- methyl isophthalic acid H- BTAs, 5,6- dimethyl -1H- BTAs, 1- (1 ', 2 '-dicarboxyethyl) BTA, 1- [N, Double (ethoxy) amino methyls of N-] BTA, 1- [double (ethoxy) amino methyls of N, N-] -5- methylbenzotrazoles, 1- [N, Double (ethoxy) amino methyls of N-] -4- methylbenzotrazoles etc..
As the example of tetrazole compound, it can enumerate:1H-TETRAZOLE, 5- methyl tetrazolium, 5- Aminotetrazoles, 5- phenyl four Azoles etc..
As the example of indazole compound, it can enumerate:1H- indazoles, 5- amino-1 h-indazoles, 5- nitro -1H- indazoles, 5- hydroxyl -1H- indazoles, 6- amino-1 h-indazoles, 6- nitro -1H- indazoles, 6- hydroxyl -1H- indazoles, 3- carboxyl -5- methyl isophthalic acids H- Indazole etc..
As the example of benzazolyl compounds, it can enumerate:1H- indoles, 1- Methyl-1H-indoles, 2- Methyl-1H-indoles, 3- Methyl-1H-indoles, 4- Methyl-1H-indoles, 5- Methyl-1H-indoles, 6- Methyl-1H-indoles, 7- Methyl-1H-indoles, 4- Amino -1H- indoles, 5- amino -1H- indoles, 6- amino -1H- indoles, 7- amino -1H- indoles, 4- hydroxyl -1H- indoles, 5- hydroxyls Base -1H- indoles, 6- hydroxyl -1H- indoles, 7- hydroxyl -1H- indoles, 4- methoxyl group -1H- indoles, 5- methoxyl group -1H- indoles, 6- Methoxyl group -1H- indoles, 7- methoxyl group -1H- indoles, the chloro- 1H- indoles of 4-, the chloro- 1H- indoles of 5-, the chloro- 1H- indoles of 6-, 7- are chloro- 1H- indoles, 4- carboxyl -1H- indoles, 5- carboxyl -1H- indoles, 6- carboxyl -1H- indoles, 7- carboxyl -1H- indoles, 4- nitros - 1H- indoles, 5- nitro -1H- indoles, 6- nitro -1H- indoles, 7- nitro -1H- indoles, 4- itrile group -1H- indoles, 5- itrile groups - 1H- indoles, 6- itrile group -1H- indoles, 7- itrile group -1H- indoles, 2,5- dimethyl -1H- indoles, 1,2- dimethyl -1H- indoles, 1,3- dimethyl -1H- indoles, 2,3- dimethyl -1H- indoles, 5- amino -2,3- dimethyl -1H- indoles, 7- ethyl -1H- Yin Diindyl, 5- (amino methyl) indoles, 2- methyl -5- amino -1H- indoles, 3- hydroxymethyl -1H- indoles, 6- isopropyl -1H- Yin Diindyl, 5- chloro-2-methyl -1H- indoles etc..
Preferred heterocyclic compound is triazole compounds, particularly preferred 1H- BTAs, 5- methyl isophthalic acid H- benzene among these And triazole, 5,6- dimethyl -1H- BTAs, 1- [N, N- double (ethoxy) amino methyls] -5- methylbenzotrazoles, 1- [N, Double (ethoxy) amino methyls of N-] -4- methylbenzotrazoles, 1,2,3- triazoles, 1,2,4- triazoles.
These heterocyclic compounds are high to the chemisorbed power or physical absorption power on the surface of grinding object thing, therefore, it is possible to The surface of grinding object thing forms more firm diaphragm.This is carried out making the composition for polishing using present embodiment It is favourable in terms of the flatness raising on the surface of the grinding object thing after grinding.
The content of anticorrosive metal agent in composition for polishing is preferably more than 0.0001 mass %, more preferably More than 0.0005 mass %.As anticorrosive metal agent is more containing quantitative change, the dissolving of metal can be prevented, difference in height can be improved Elimination property.In addition, the content of the anticorrosive metal agent in composition for polishing is preferably below 1 mass %, is more preferably 0.5 matter Measure below %, more preferably below 0.1 mass %.As the content of anticorrosive metal agent tails off, grinding rate is improved.
(3) on surfactant
Surfactant can be contained in the composition for polishing of present embodiment.Surfactant is due to by grinding Surface to be polished afterwards assigns hydrophily, makes the cleaning efficiency of the surface to be polished after grinding good, therefore, it is possible to prevent dirt in quilt Attachment of abradant surface etc..The species of Surfactant is not particularly limited, and can be anionic surfactant, cation It is any number of in property surfactant, amphoteric surfactant and nonionic surfactant.These surfactants can be with 1 kind is used alone, two or more can also be applied in combination.
As the example of anionic surfactant, it can enumerate:It is polyoxyethylene alkyl ether acetic acid, polyxyethylated Sulfuric ester, alkyl sulfate, polyoxyethylene alkyl ether sulfuric acid, alkyl ether sulfate, alkyl benzene sulphonate, alkyl phosphate, polyoxy second Allylic alkylation phosphate, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic, alkyl naphthalene sulfonic acid, alkyl diphenyl base ether disulfonic acid, And their salt etc..
As the example of cationic surfactant, it can enumerate:Alkyl trimethyl ammonium salt, alkyl dimethyl ammonium salt, alkane Base benzyl dimethyl ammonium salt, alkylamine salt etc..
As the example of amphoteric surfactant, it can enumerate:Alkyl betaine, alkyl amine oxide etc..
As the example of nonionic surfactant, it can enumerate:Polyoxyethylene alkyl ether, polyoxyalkylene alkyl Ether, sorbitan fatty acid ester, fatty acid glyceride, polyoxyethylene fatty acid ester, polyoxyethylene alkyl amine, alkyl chain triacontanol Acid amides etc..
The content of surfactant in composition for polishing is preferably more than 0.0001 mass %, is more preferably 0.001 More than quality %.As surfactant is more containing quantitative change, the cleaning efficiency of the surface to be polished after grinding is further improved.Separately Outside, the content of the surfactant in composition for polishing is preferably below 1 mass %, is more preferably below 0.1 mass %.With The content for surfactant tails off, and surfactant is the residual quantity of surface to be polished is reduced, cleaning efficiency further improves.
(4) on water soluble polymer
Water soluble polymer can be contained in the composition for polishing of present embodiment.If being added in composition for polishing Water soluble polymer, then the redispersibility of magnetic-particle and abrasive grains become better.Species to water soluble polymer does not have It is particularly limited to, as concrete example, can enumerates:It is poly styrene sulfonate, polyisoprene sulfonate, polyacrylate, poly- Maleic acid, poly- itaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycereol, PVP, isoprene sulfonic acid with Copolymer, PVP-acrylic copolymer, the PVP-vinyl acetate of acrylic acid are common Polymers, the salt of naphthalene sulfonic acids-formaline condensates, diallyl amine hydrochlorate-sulfur dioxide copolymer, carboxymethyl cellulose, Salt, hydroxyethyl cellulose, hydroxypropyl cellulose, alpha-cellulose, β-cellulose, gamma cellulose, the side chain of carboxymethyl cellulose form sediment Powder, chitosan, chitosan salt.These water soluble polymers can be used singly or in combination of two or more.
The content of water soluble polymer in composition for polishing is preferably more than 0.0001 mass %, is preferably 0.001 More than quality %.As water soluble polymer is more containing quantitative change, the redispersibility of magnetic-particle and abrasive grains becomes better. In addition, the content of the water soluble polymer in composition for polishing is preferably below 1 mass %, more preferably 0.1 mass % with Under.Tailed off with the content of water soluble polymer, residual quantity of the macromolecule in surface to be polished is reduced, cleaning efficiency is further carried It is high.
(5) on preservative, mould inhibitor
Preservative, mould inhibitor can be contained in the composition for polishing of present embodiment.To the kind of preservative and mould inhibitor Class is not particularly limited, as concrete example, can enumerate:MIT, the different thiophenes of 5- chloro-2-methyls -4- The isothiazoline system such as oxazoline -3- ketone preservative, parabens, phenoxetol etc..These preservatives and mould inhibitor It can be used singly or in combination of two or more.
9. the manufacture method on composition for polishing
Manufacture method to the composition for polishing of present embodiment is not particularly limited, for example, can be by by magnetic Each composition such as particle, antioxidant stirs mixing to manufacture in water.Temperature during to each composition being mixed is not particularly limited, It is preferred that more than 10 DEG C and less than 40 DEG C, in order to improve dissolution velocity, it can be heated.In addition, to incorporation time also without spy Do not limit.
Or can also be by preparing the 1st composition containing magnetic-particle and the 2nd composition containing water respectively in addition, by institute Two-component mixing is stated to manufacture composition for polishing.Now, antioxidant can be contained in the 1st composition, can also be contained in In 2nd composition, it can also be contained in two-component.Or, antioxygen can be added in the mixture of the 1st composition and the 2nd composition Agent, can also mix the 1st composition and the 2nd composition and antioxidant simultaneously.
If magnetic-particle is contacted with water, the oxidation of magnetic-particle, therefore the mixing of the 1st composition and the 2nd composition can be promoted It is preferred that being carried out before the grinding of grinding object thing, more preferably carried out at the time point as close possible to grinding beginning period.Tool For body, the mixing of the 1st composition and the 2nd composition is carried out preferably before 1 week when starting is ground and afterwards, more preferably opened in grinding Carry out, carry out further preferably before 24 hours when starting are ground and afterwards before 2 days during the beginning and afterwards, it is particularly preferably in sight Carried out before grinding will be started (such as before 1 hour and afterwards, before 30 minutes and afterwards).
If the process for entering to be about to the 1st composition and the mixing of the 2nd composition before it will start grinding, will not be promoted substantially The oxidation of magnetic-particle, thus will not occur substantially the grinding performance of composition for polishing through when reduce.Therefore, if used The composition for polishing so manufactured is ground to grinding object thing, then can carry out finishing to grinding object thing with high accuracy The grinding of work.In addition, also the yield of hydrogen can be suppressed on a small quantity.And then, due in advance by the 1st composition of preparation and the 2nd Composition is retained separately, and is mixed before it will start grinding, therefore storage stability is very excellent, can also protect for a long time Deposit.
10. on magnetic Ginding process
The Ginding process of the grinding object thing of composition for polishing using present embodiment is not particularly limited, this reality The magnetic grain cluster of brush can be formed by applying for magnetic field along magnetic induction line by applying the composition for polishing of mode, therefore can be used for magnetic Ginding process.
By applying magnetic field, formed after the magnetic grain cluster containing magnetic-particle, connect making magnetic grain cluster in composition for polishing On the basis of the surface to be polished for touching grinding object thing, make one or both of grinding object thing and magnetic grain cluster mobile, make magnetic grain The surface to be polished sliding contact of cluster and grinding object thing.Then, due to magnetic grain cluster contact with the surface to be polished of grinding object thing The shear stress at position, the surface to be polished of grinding object thing is ground.Because magnetic grain cluster can also follow the shape of complexity, bumps Shape and deform, therefore the grinding of plane can not only be realized, can also realize the grinding in the face of 3D shape.
Herein, reference picture 1, is illustrated to one of magnetic Ginding process.The magnetic lapping device shown in Fig. 1 possesses:With Container 10 in receiving composition for polishing 1, the magnetic field in the application of composition for polishing 1 magnetic field to being contained in container 10 apply Portion 12, the maintaining part 14 for keeping grinding object thing 5, the first drive division for rotating the axis of rotation 16 with the link of maintaining part 14 18th, it rotatably connected the plectane 20 of the axis of rotation 16 and rotate plectane 20 so that the second drive that maintaining part 14 revolves round the sun Dynamic portion 22.
Magnetic field applying unit 12 is arranged on the discoideus grinding flat plate 24 for being arranged at the bottom of container 10, enabling right The composition for polishing 1 for being contained in container 10 applies magnetic field.For grinding flat plate 24, as long as can be to being contained in grinding for container 10 Mill applies magnetic field with composition 1, then can be arranged in container 10, can also be arranged at outside container 10.To magnetic field applying unit 12 Be constructed without be particularly limited to, can be for example made up of permanent magnet, electromagnet.In the example in fig 1, magnetic field applying unit 12 is by forever Magnet is constituted, and multiple permanent magnets are provided with grinding flat plate 24.Intensity to the magnetic field of application is not particularly limited, can be with The surface magnetic flux density in the face contacted among magnetic field applying unit 12 with magnetic grain cluster 3 is more than 100mT and below 3000mT (i.e. 1000 More than Gauss and below 300000 Gausses) mode be adjusted.
(it is designated as sometimes below " vertical in addition, pointing to the direction perpendicular relative to the plate face of grinding flat plate 24 with magnetic induction line Direction ") mode, all permanent magnets are installed in the way of making magnetic pole of the same race towards the same direction side of vertical direction and ground Polish plate 24.Therefore, the magnetic grain cluster 3 formed in composition for polishing 1 is perpendicular in the plate face relative to grinding flat plate 24 Side is upwardly extended.But it is also possible to will in the way of magnetic induction line sensing is in horizontal direction relative to the plate face of grinding flat plate 24 Permanent magnet is installed on grinding flat plate 24.For example, be divided into make S poles (can also be N poles) towards a direction side of vertical direction (for example Upper side) and install permanent magnet and make S poles (can also be N poles) towards the other direction side (such as lower side) of vertical direction And install permanent magnet, for adjacent permanent magnet, if make S extremely mutually point to vertical direction opposite direction, magnetic induction line The plate face that can be pointed to relative to grinding flat plate 24 is in horizontal direction.
By the grinding object thing 5 for being held in maintaining part 14 with the interval for being spaced apart vertical direction with grinding flat plate 24 and Configuration.Now, the vertical direction between grinding object thing 5 and grinding flat plate 24 connects at intervals of grinding object thing 5 and magnetic grain cluster 3 Tactile size.Then, the axis of rotation 16 being extends in the vertical direction is rotated using the first drive division 18, and is driven using second Portion 22 makes to rotate in parallel plectane 20 with grinding flat plate 24.Because the axis of rotation 16 is arranged on the center more outward footpath than plectane 20 Side, therefore by rotating the axis of rotation 16 while rotating plectane 20, grinding object thing 5 (maintaining part 14) can be made relative In the plate face keeping parallelism of grinding flat plate 24 and one side rotation, while revolution.First drive division 18 and the second drive division 22 It can be such as made up of motor.
By the spinning motion and revolution motion of such grinding object thing 5, grinding object thing 5 is contacted simultaneously with magnetic grain cluster 3 Relatively moved, therefore the surface to be polished of magnetic grain cluster 3 and grinding object thing 5 carries out sliding contact, so as to right with high accuracy The surface to be polished of grinding object thing 5 is finished (such as minute surface finishing).
It should be noted that being used as magnetic lapping device, it is possible to use CNC grinding attachments.In addition, Fig. 1 magnetic lapping device It is to make the composition or make magnetic field applying unit in contrast to this that grinding object thing 5 is moved but magnetic field applying unit 12 is not moved The magnetic lapping device for the composition that 12 movements but grinding object thing 5 are not moved.Or or make grinding object thing 5 and magnetic field The magnetic lapping device for the composition that both applying units 12 are moved.
It can formerly implement and pay attention to after coarse-fine processing/middle finishing grinding of processing efficiency, implement to pay attention to surface quality Finishing grinding etc., point multiple stages are ground.
(embodiment)
Embodiment described below, more specifically the present invention will be described.First, it is various anti-on what is shown in table 1~6 Oxidant, investigation suppresses performance and suppression the gathering as the iron particle of magnetic-particle of the oxidation of the iron particle as magnetic-particle The performance of collection.Evaluation method is illustrated below.
Appropriate potassium hydroxide or nitric acid are added in the mass parts of antioxidant 0.25, the mixture of the mass parts of water 59.75 and PH is adjusted to 9.5, and then adds the mass parts of iron particle 40 of average 13 μm of particle diameter, prepares slurry.
Slurry 400g is contained in capacity 500mL container, it is small to preserve 72 at each temperature in 23 DEG C, 35 DEG C, 43 DEG C Shi Hou, the hydrogen determined with detector (GP-1000 of RIKEN KEIKI Co., Ltd.s) in the gas in container is dense Degree.Show the result in table 1~6.It should be noted that by the gas in the container after being preserved 72 hours at 35 DEG C of temperature It is qualified that situation of the density of hydrogen less than 0.01 volume % is designated as.
Then, slurry 400g is contained in capacity 500mL container, 72 is preserved at each temperature in 23 DEG C, 35 DEG C, 43 DEG C Hour.Then, due to generating the aggregation precipitum of iron particle, therefore container is vibrated, the thus aggregation to iron particle is sunk Drop thing whether evaluated by broken and redisperse.Show the result in table 1~6.It should be noted that in table 1~6, by iron The situation of the broken simultaneously redisperse of the aggregation precipitum of grain is represented with symbol "○", by the situation of non-redisperse symbol "×" table Show.It is qualified that the situation of the aggregation precipitum redisperse generated after the preservation 72 hours of 35 DEG C of temperature is designated as.
[table 1]
[table 2]
[table 3]
[table 4]
[table 5]
[table 6]
From table 1~6, for alkenylsuccinic derivatives, dipyridyl derivatives, phenanthroline derivative, Triazole Do not have the amine of carbon-to-carbon multiple bond in biological, benzotriazole derivatives and molecule, the generation of hydrogen is few, it is suppressed that magnetic-particle Oxidation.In addition we know, the aggregation precipitum energy redisperse of iron particle.
On the other hand, for the common phosphoric acid based compound of the anticorrosive as iron, benzothiazole derivant, in gold Category grinding in be used as antioxidant nitrogen-containing compound (terazole derivatives, pyrazole derivatives, imdazole derivatives, indole derivatives, Hydrazine derivate), the conventional surfactant, the water soluble polymer that are used for used in the composition for polishing that magnetic is ground etc., The performance for suppressing the oxidation of magnetic-particle and the performance for the aggregation for suppressing magnetic-particle are low.
Then, the correlation to the concentration and the effect above (oxidizing and depressing effect and aggregation inhibition) of antioxidant is entered Row is evaluated.Evaluation method in addition to this different point of the concentration of antioxidant, it is other as described above.Show the result in table 7.
[table 7]
As shown in Table 7, derive for alkenylsuccinic derivatives, dipyridyl derivatives, phenanthroline derivative, triazole Do not have the amine of carbon-to-carbon multiple bond in thing, benzotriazole derivatives and molecule, concentration is higher, and the effect above is more improved.With this Relatively, for the conventional antioxidant being used for used in the composition for polishing that magnetic is ground, even if improving concentration, also no The effect for the level that can be used on to practicality.
Then, evaluate effect during a variety of antioxidants is applied in combination.Evaluation method is except using a variety of antioxygens Agent this point beyond, it is other as described above.Show the result in table 8.
[table 8]
Then, magnetic grinding is carried out to various grinding object things using various composition for polishing, determines grinding rate (unit For μm/minute).In addition, whether producing hydrogen, the magnetic-particle assembled after grinding whether redisperse being adjusted during to grinding Look into.And then, gloss and damage to the surface to be polished of grinding object thing are evaluated.
For the evaluation of redispersibility, the composition for polishing used in grinding is collected, by same with the situation of table 1~6 The preceding method (preservation condition is 35 DEG C, 72 hours) of sample is carried out.Then, the amounts of hydrogen of generation is less than to 0.01 volume % feelings Condition is evaluated as hydrogen " not producing ".In addition, the magnetic-particle in the composition for polishing after grinding is easily divided again by vibration Scattered situation is evaluated as redispersibility " good ", and the redisperse based on vibration is insufficient but can realize the degree that has no problem Scattered situation is evaluated as redispersibility "available", and the situation for generating the aggregation for being easily detected by vibrating redisperse is evaluated as again Dispersed " bad ".
For grinding rate, the quality of the grinding object thing before and after being ground with electronics balance measurement is obtained by its difference.It is right In the gloss of the surface to be polished of grinding object thing, the situation for obtaining minute surface is evaluated as " good ", minute surface but observable will be obtained Situation about being hazed to part is evaluated as "available", and the situation that minute surface is not obtained is evaluated as " bad ".For the quilt of grinding object thing The cut of abradant surface, will can not be evaluated as " not producing " with the situation of the damage visually confirmed, be possible to visually confirm Situation of the quantity within 5 of damage be evaluated as "available", be possible to using the quantity of damage visually confirmed as more than 6 Situation is evaluated as " bad ".
Composition for polishing is the slurry by obtaining as follows:The mass parts of magnetropism particle 50, the mass of abrasive grains 11.9 Appropriate hydrogen is added in part, the mass parts of antioxidant 0.157, the mass parts of alpha-cellulose 1.25, the mixture of the mass parts of water 36.693 Potassium oxide or nitric acid, pH are adjusted in table 9~23 described such.Wherein, on recording numerical value in the column of oxidant Embodiment, is used as oxidant, the only hydrogen peroxide containing the amount shown in table 9~23.In addition, the column on water soluble polymer In be sky column embodiment, do not contain alpha-cellulose.
Magnetic-particle is carbonyl iron or is atomized iron, described in its average 1 particle diameter such as table 9~23.Abrasive grains are two It is described in silica or aluminum oxide, its average 2 particle diameters such as table 9~23.Antioxidant is as shown in table 9~23.
It should be noted that the TA of table 9~23 is 1,2,4- triazoles, BTA is BTA, and OSAA is N, double (the 2- hydroxyls of N- Base ethyl) octenyl succinic amic acid (ocentyl succinic diglycollic amide), BTYE is 2,2 '-[[(methyl isophthalic acid H- benzos three Azoles -1- bases) methyl] imino group] diethanol, PT is 1,10- phenanthrolenes.
[table 9]
[table 10]
[table 11]
[table 12]
[table 13]
[table 14]
[table 15]
[table 16]
[table 17]
[table 18]
[table 19]
[table 20]
[table 21]
[table 22]
[table 23]
Magnetic grinding is carried out using these composition for polishing.The lapping device used is that EGURO LTD. CNC is ground The device that the machine of cutting is transformed, its structure is same with the device shown in Fig. 1.In addition, grinding object thing is with anodic oxygen The test film of the aluminum of change epithelium, brass C2600 test film, brass C2801 test film, SUS304 experiment The test film for test film or PPSU (PPSU) system that piece, SUS316 test film, aluminium 6063 are made.These test films For length of side 60mm, the plate of thickness 8mm square shape.Grinding condition is as follows.
By grinding object thing for the aluminum with anodic oxide coating test film in the case of result of the test be shown in table 9 ~13, the result of the test in the case of for brass C2600 test film is shown in table 14, by for brass C2801 experiment Result of the test in the case of piece is shown in table 15, and the result of the test in the case of the test film for SUS304 is shown in into table 16, Result in the case of test film for SUS316 is shown in table 17, the result in the case of the test film that will be made for aluminium 6063 Table 18~21 is shown in, the result in the case of the test film that will be made for PPSU (PPSU) is shown in table 22,23.
<Grinding condition>
Grinding object thing and the distance on grinding flat plate surface:2mm
Revolution speed:10rpm
Rotational velocity:250rpm
The consumption of composition for polishing:600g
Milling time:30 minutes
The surface magnetic flux density of permanent magnet:350mT
As shown in table 7~23, in the case of the composition for polishing for having used each embodiment, grinding rate is high, and energy The generation of hydrogen is enough prevented, and then, the redispersibility of the magnetic-particle of aggregation is good.And then, it is used as the iron powder of magnetic-particle In the case that average 1 particle diameter is less than 10 μm, the gloss of the surface to be polished of grinding object thing is especially good, has obtained not producing The suitable surface to be polished of damage.On the other hand, it is known that in the case of the composition for polishing for having used comparative example, hydrogen is produced Gas, it is impossible to prevent the oxidation of magnetic-particle.In addition, the magnetic-particle of aggregation lacks redispersibility.

Claims (18)

1. a kind of composition for polishing, its contain magnetic-particle, the antioxidant of oxidation for suppressing the magnetic-particle and Water.
2. composition for polishing according to claim 1, wherein, also containing nonmagnetic abrasive grains.
3. composition for polishing according to claim 1 or 2, wherein, the antioxidant be alkenylsuccinic derivatives, It is multiple without carbon-to-carbon in dipyridyl derivatives, phenanthroline derivative, triazole derivative, benzotriazole derivatives and molecule It is at least one kind of in the amine of key.
4. composition for polishing according to claim 3, wherein, the alkenylsuccinic derivatives comprising following formula (1), (2) or the compound shown in (3),
The R of compound shown in above-mentioned formula (1)1And R2Hydrogen atom or the carbon number of straight-chain or branched are represented independently of one another Less than 20 alkenyl, X1Hydrogen atom or cation, R are represented independently of one another1And R2It is asynchronously hydrogen atom,
The R of compound shown in above-mentioned formula (2)11And R14Hydrogen atom or the carbon of straight-chain or branched are represented independently of one another Alkenyl of the number below 20, R12And R13Represent independently of one another alkenyl of the alkyl, carbon number below 10 of hydrogen atom, carbon number below 10, Hydroxy alkyl, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)n-CH2CH2) or polyoxypropylene base (- (CH OH2CHCH3O)m- CH2CHCH3OH), R11And R14It is asynchronously hydrogen atom, the n of above-mentioned polyoxyethylene groups represents that the average addition of oxyethylene group rubs That number, is more than 1 and less than 19, the m of above-mentioned polyoxypropylene base represents the average addition molal quantity of oxypropylene group, is more than 1 And less than 19, in addition, the X of the compound shown in above-mentioned formula (2)11Hydrogen atom or cation are represented,
And then, the R of the compound shown in above-mentioned formula (3)31And R36Hydrogen atom or straight-chain or branched are represented independently of one another Alkenyl of the carbon number below 20, R32、R33、R34And R35Alkyl, the carbon number 10 of hydrogen atom, carbon number below 10 are represented independently of one another Following alkenyl, hydroxy alkyl, hydroxyalkenyl group, polyoxyethylene groups (- (CH2CH2O)r-CH2CH2OH) or polyoxypropylene base (- (CH2CHCH3O)s-CH2CHCH3OH), R31And R36It is asynchronously hydrogen atom, the r of above-mentioned polyoxyethylene groups represents oxyethylene group Average addition molal quantity, be more than 1 and less than 19, the s of above-mentioned polyoxypropylene base represents that the average addition of oxypropylene group rubs That number, is more than 1 and less than 19.
5. composition for polishing according to claim 3, wherein, the dipyridyl derivatives are comprising shown in following formula (4) Compound,
Wherein, the R of the compound shown in above-mentioned formula (4)41、R42、R43、R44、R45、R46、R47And R48Represent that hydrogen is former independently of one another Son, alkyl, alkenyl, phenyl, hydroxyl, amino, carboxyl, sulfo group, nitro, halogen group, hydroxy alkyl, hydroxyalkenyl group, alkyl ammonia Base, alkenyl amino, carboxyalkyl, carboxyalkenyl, alkyl sulfobetaines, alkenyl sulfo group, alkyl nitro, alkenyl nitro, alkoxy, acetyl Base, alkylether radicals, alkenyl ether, haloalkyl, haloalkenyl group.
6. composition for polishing according to claim 3, wherein, the phenanthroline derivative includes following formula (5) institute The compound shown,
Wherein, the R of the compound shown in above-mentioned formula (5)51、R52、R53、R54、R55、R56、R57And R58Represent that hydrogen is former independently of one another Son, alkyl, alkenyl, phenyl, hydroxyl, amino, carboxyl, sulfo group, nitro, halogen group, hydroxy alkyl, hydroxyalkenyl group, alkyl ammonia Base, alkenyl amino, carboxyalkyl, carboxyalkenyl, alkyl sulfobetaines, alkenyl sulfo group, alkyl nitro, alkenyl nitro, alkoxy, acetyl Base, alkylether radicals, alkenyl ether, haloalkyl, haloalkenyl group.
7. composition for polishing according to claim 3, wherein, do not have the amine bag of carbon-to-carbon multiple bond in the molecule Containing the compound shown in following formula (6), (7), (8) or (9),
The R of compound shown in above-mentioned formula (6)61、R62、R63Hydrogen atom, alkyl or hydroxy alkyl are each independently, or respectively From independently being carboxyalkyl, phosphonic acids alkyl or sulfonic alkyl, R61、R62、R63Can be so that carbon atom bonds together and forms ring-type Alkane, but R61、R62、R63It is hydrogen atom when this three is different,
The R of compound shown in above-mentioned formula (7)71、R72、R73、R74Hydrogen atom, alkyl or hydroxy alkyl are represented independently of one another, R71、R72、R73、R74Can be so that carbon atom bond together and forms cyclic alkane, the R of the compound shown in above-mentioned formula (7)75Represent carbon Number more than 2 and less than 10 alkylidene,
The R of compound shown in above-mentioned formula (8)81、R82、R83、R84、R85Hydrogen atom, alkyl or hydroxyl alkane are represented independently of one another Base, R81、R82、R83、R84、R85Can so that carbon atom bonds together and forms cyclic alkane, compound shown in above-mentioned formula (8) R86、R87Carbon number more than 2 and less than 10 alkylidene are represented,
The R of compound shown in above-mentioned formula (9)91、R92、R93、R94、R95、R96Hydrogen atom, alkyl or hydroxyl are represented independently of one another Base alkyl, R91、R92、R93、R94、R95、R96Can be so that carbon atom bond together and forms cyclic alkane, the change shown in above-mentioned formula (9) The R of compound97、R98、R99Represent carbon number more than 2 and less than 10 alkylidene.
8. according to composition for polishing according to any one of claims 1 to 7, wherein, the magnetic-particle contain iron, nickel, And it is at least one kind of in cobalt.
9. according to composition for polishing according to any one of claims 1 to 8, wherein, pH is more than 5 and less than 12.
10. according to composition for polishing according to any one of claims 1 to 8, wherein, pH is more than 7 and less than 12.
11. according to composition for polishing according to any one of claims 1 to 10, wherein, contain substantially no oxidant.
12. a kind of magnetic Ginding process, the composition for polishing any one of its usage right requirement 1~11 is to grinding object Thing is ground, and the Ginding process includes following process:Magnetic field is applied to the composition for polishing and formed containing described The magnetic grain cluster of magnetic-particle, makes the magnetic grain cluster contact the grinding object thing and be ground to the grinding object thing.
13. magnetic Ginding process according to claim 12, wherein, the grinding object thing contains alloy and metal oxide At least one of.
14. magnetic Ginding process according to claim 12, wherein, the grinding object thing contains aluminium alloy, ferroalloy, magnesium It is at least one kind of in alloy and titanium alloy.
15. magnetic Ginding process according to claim 12, wherein, the grinding object thing contain aluminum oxide, zirconium oxide and It is at least one kind of in silica.
16. magnetic Ginding process according to claim 12, wherein, the grinding object thing includes the part on its surface Formed by metal oxide, other parts are formed by alloy.
17. the magnetic Ginding process according to any one of claim 12~16, wherein, by containing the magnetic-particle 1 composition and the 2nd composition containing the water were mixed before the grinding of the grinding object thing, thus manufactured the grinding group Compound, is ground using the composition for polishing of manufacture to the grinding object thing.
18. a kind of manufacture method of composition for polishing, it is the grinding group any one of manufacturing claims 1~11 The method of compound, the manufacture method includes and mixes the 1st composition containing the magnetic-particle and the 2nd composition containing the water The process of conjunction.
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