CN106979830A - Chipless RFID temperature threshold sensor, production method and temperature alarming device - Google Patents
Chipless RFID temperature threshold sensor, production method and temperature alarming device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 38
- 238000001514 detection method Methods 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 18
- 238000007639 printing Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 4
- 238000010276 construction Methods 0.000 abstract 1
- 230000010259 detection of temperature stimulus Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000002360 explosive Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013068 supply chain management Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
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Abstract
The invention discloses chipless RFID temperature threshold sensor, production method and temperature alarming device.It mainly includes matrix, and matrix surface is provided with ELC resonators, and ELC resonator surfaces are covered with the temperature-sensitive material layer that can occur solid-gas reaction.The temperature-sensitive material layer can be poor film.Its production method mainly includes a, selection matrix；B, matrix surface set ELC resonators；C, temperature-sensitive material is covered in ELC resonator surfaces；D, drying.Present invention cost simple in construction is low, and detecting distance is remote.Realize the low-cost wireless detection of temperature alarming information.By the sensitive thin-film material of more emat sensor, series of temperatures threshold sensor can be formed.Due to have the advantages that inexpensive, passive, chipless, can flexible printing, the prospect of this sensor is boundless, is particularly suitable for use in the Internet of Things developed rapidly at present.
Description
Technical Field
The invention relates to the field of temperature sensors, in particular to a chipless RFID temperature threshold sensor, a production method and a temperature alarm device.
Background
The rapid development of the internet of things requires a large number of low-cost sensors. At present, the most temperature detection applications are wired sensors, the wired sensors have the characteristics of high precision and high sensitivity, but the manufacturing process is complex, and meanwhile, a peripheral circuit needs to be connected, so that the size of a detection system is relatively large, and the detection cost is high. On the other hand, most of wired sensors have silicon chips inside, so that the sensors cannot work under severe environmental conditions, such as ultrahigh temperature, ultralow temperature and strong acid-base environment.
In order to solve many problems of the wired sensor, wireless temperature detection technology is being developed in the field.
For example, in sensor technology, 2002, vol 21, No. 4, a wireless temperature sensing system for passive surface acoustic wave resonators is disclosed, which uses the characteristics of the propagation velocity of surface waves and the influence of temperature on the geometric parameters of the resonators to perform wireless temperature detection. Although the technology can carry out wireless temperature detection, the technology needs to be manufactured on a piezoelectric ceramic substrate, the substrate is not bendable and fragile, microelectronic processes such as photoetching and vacuum coating are needed in the manufacturing process, the process is complex, the cost is high, the working frequency range is approximately 87MHz-108MHz, the detection distance is short, and the technology is only suitable for short-distance detection.
For another example, chinese patent 201610436065X discloses a temperature sensor integrated in an RFID tag. Which integrates the temperature sensor completely into the chip of the RFID tag and shares a number of module circuits (including counters, oscillators, RFID tag clocks, digital control circuits, load modulation circuits, etc.) with other modules of the RFID tag chip. The temperature sensor has the disadvantages of excessive applied module circuits, complex production process, relatively high cost, inconvenience for large-scale popularization and use and unsuitability for use in severe environment.
Chinese patent 2016105101949 discloses a multilayer inductance passive wireless LC temperature sensor, which comprises an LC resonance circuit formed by temperature-sensitive inductors and a capacitor, wherein the temperature-sensitive inductors comprise N layers of laminated detection inductors, the detection inductors are connected in series, cover plates are arranged between two adjacent layers of detection inductors and at the top of the topmost detection inductor, and a substrate is arranged at the bottom of the bottommost detection inductor; each layer of detection inductor has the same structure and comprises an inductor die, the inductor die is a spiral groove, and liquid metal alloy is injected into the groove to form a spiral inductor; a metal oxide conformal layer is formed in the groove and on the upper surface of the liquid metal alloy, and the height of the metal oxide conformal layer in the groove is lower than that of the upper surface of the groove; and the capacitance in the LC resonance circuit is formed by connecting the parasitic capacitance between two adjacent layers of detection inductance substances in parallel. The sensor has the following disadvantages: the principle is complex, so that the structure is still complex, and the manufacturing process requirement is high. Resulting in a final cost that is still high.
The various sensors have complex structures and high cost, mainly due to the influence of design concepts. Factors to consider include the ability to sense different temperatures with one sensor and the ability to cycle the sensor multiple times. The design idea causes the complex structure and high cost of the existing various temperature sensors. In some special use environments, the sensor capable of detecting the temperature of a specific threshold value is required to meet the requirement, when the temperature reaches the threshold value, the sensor can detect the temperature and trigger the alarm, and various temperatures do not need to be detected and displayed, and the sensor can be recycled for many times. For example, when transporting explosive articles, the temperature is controlled below the threshold value, the temperature does not need to be detected and displayed in real time, and the alarm can be triggered to give an alarm when the temperature rises to the threshold value. It can be seen that in this application, no complex and costly temperature sensor is required. The existing wireless temperature sensor is still high in manufacturing cost, so that the wireless temperature sensor is difficult to popularize and use on a large scale. The demand of the field of internet of things on low-cost temperature sensors is urgent, so that it is necessary to develop a temperature sensor which meets the demand, is low in cost and simple in production process.
Disclosure of Invention
The invention aims to provide a chipless RFID temperature threshold sensor which is simple in structure and low in cost.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a chipless RFID temperature threshold sensor comprises a substrate, wherein an ELC resonator is arranged on the surface of the substrate, and a temperature sensitive material layer capable of generating solid-gas phase change is covered on the surface of the ELC resonator.
Further, the temperature sensitive material layer is a phenanthrene film.
Further, the substrate is a flexible substrate or a rigid substrate.
The invention also provides a temperature alarm device, which comprises the chipless RFID temperature threshold sensor and an RFID card reader, wherein the RFID card reader is used for transmitting electromagnetic waves to the sensor and receiving reverse electromagnetic waves, the RFID card reader is connected with the detection processing module, the detection processing module is connected with the alarm module, the detection processing module is used for detecting the offset of the resonance frequency in the frequency spectrum of the electromagnetic waves received by the RFID card reader, and when the offset is greater than or equal to a preset value, the detection processing module starts the alarm module.
Further, the temperature sensitive material layer is a phenanthrene film.
Further, the substrate is a flexible substrate or a rigid substrate.
The invention also provides a production method of the chipless RFID temperature threshold sensor, which comprises the following steps:
a. selecting a substrate;
b. an ELC resonator is arranged on the surface of the substrate;
c. covering a temperature sensitive material on the surface of the ELC resonator;
d. and (5) drying.
And further, the temperature sensitive material is phenanthrene powder, in the step c, the phenanthrene powder is placed in a tetrahydrofuran solution, the phenanthrene powder is completely dissolved through magnetic stirring at the temperature of 60 ℃, and in the step d, the phenanthrene powder is dried at the temperature of 40 ℃.
Further, in step a, the substrate is a rigid substrate or a flexible substrate.
The sensor structure of the invention adopts a special electric-coupling LC resonator (ELC resonator), which has the advantages of small volume and high resonance quality factor, wherein the resonator resonates in a UHF frequency band, and the center frequency is 2.45 GHz. Coating a layer of temperature-sensitive organic material Phenanthrene (C) on the surface of an ELC resonator14H10). Phenanthrene is a sublimable substance with polycyclic hydrocarbon groups that can be converted directly from the solid phase to the gas phase without going through an intermediate liquid phase. Sublimation is an endothermic phase change with a phenanthrene phase change enthalpy of 90.5 kj mol-1The phase transition temperature is about 72 ℃. The resonance characteristics of the resonator are influenced by the characteristics of the phenanthrene film, and the composite dielectric constant of the two constituent structures is a main factor determining the resonance frequency.
When broadband electromagnetic waves transmitted by the RFID card reader irradiate the sensor, the sensor has excellent resonance performance and absorbs electromagnetic waves with specific frequency, so that the frequency spectrum characteristics of backscattering waves received by the card reader are changed and are mainly reflected on the amplitude and the phase of a resonance frequency point. When the measured temperature is higher than 72 ℃, the sensitive material film is sublimated, the dielectric constant of the sensor is increased rapidly, the resonance frequency is changed obviously, and the detection of the temperature threshold value can be realized by detecting whether the resonance frequency in the frequency spectrum of the reverse electromagnetic wave received by the card reader is deviated or not.
The invention has the beneficial effects that: simple structure is with low costs, and detection distance is relatively far away. The low-cost wireless detection of the temperature alarm information is realized. By replacing the sensitive film material of the sensor, a series of temperature threshold sensors can be formed. The invention can be used for supply chain management, does not need to continuously detect the temperature in the storage and transportation processes of certain chemicals, medicines, explosives and the like, focuses on a temperature threshold point, and sends alarm information when the temperature of a test environment is higher than the threshold temperature. In particular, as printing and materials technologies have evolved, sensors may be made flexible or may be printed on packaging paper by printing equipment, directly applied to the surface of the shipping package. The sensor has the advantages of low cost, no source, no chip, flexible printing and the like, has very wide prospect, and is particularly suitable for the Internet of things which is rapidly developed at present.
Drawings
FIG. 1 is a cross-sectional view of a sensor structure of the present invention
Fig. 2 is a structural view of an ELC resonator in the sensor of the present invention.
Fig. 3 is an equivalent circuit diagram of an ELC resonator in the sensor of the present invention.
FIG. 4 is a flow chart of the preparation of the temperature sensitive film in the sensor of the present invention.
Fig. 5 is a schematic diagram of a detection system of the sensor of the present invention.
Fig. 6 is a graph of test results for a sensor of the present invention.
Fig. 7 is a schematic view of the temperature warning device of the present invention.
Labeled as: the device comprises a temperature sensitive material layer 1, an ELC resonator 2, a substrate 3, an electromagnetic wave transmitting antenna 4, a sensor 5, an electromagnetic wave receiving antenna 6 and a vector network analyzer 7.
Detailed Description
The invention is further described with reference to the following figures and detailed description.
The cross section of the RFID temperature threshold sensor structure is shown in FIG. 1. In the figure, the substrate 3 can be rigid substrates such as FR4 copper clad laminate, Taconic TLX _8 copper clad laminate and the like or flexible substrates such as PVC, wrapping paper and the like; the black part is a metal layer used for forming the ELC resonator 2, the copper-clad plate is a residual copper conducting layer after wet etching when the copper-clad plate is adopted, and the layer can be a conductive silver paste layer realized in a printing mode when the flexible substrate is adopted. The shaded part is a temperature sensitive material layer 1 coated on the surface of the metal resonator structure, such as a phenanthrene film and the like, and other ionic plastic crystals can also be used.
FIG. 2 is a diagram of an ELC resonator in an RFID sensor. This structure has the following two advantages: in nature, the sensor has supernormal medium characteristics, so that the structure miniaturization and good resonance characteristics are easier to realize, and the sensor performance is favorably improved; structurally, the structure is simple, the height is symmetrical, and the design is simple. Its main structural parameters can be divided into inductance parameters and capacitance parameters: the capacitance parameter comprises the line width g of the upper and lower electrodes of the capacitor1Gap gCAnd a capacitance length LC(ii) a The inductance parameters include length L, width W and line width d1。
After the resonator is excited by an electromagnetic wave vertical to the surface of the resonator, a structure which is positioned in the middle and used for providing a capacitor strongly couples an electric field to drive the whole LC resonance circuit; the loop structures on both sides for providing inductance have a very weak magnetic coupling due to the high structural symmetry.
The ELC resonator is optimally designed by using radio frequency simulation software HFSS, and as a specific example, the following table shows the structural parameters of the resonator with a substrate material of Taconic TLX _8 copper-clad plate and a resonant frequency of 2.45 GHz.
TABLE 1
FIG. 3 is an equivalent circuit diagram of an ELC resonator in an RFID sensor of the present invention. The capacitor is composed of two parts: cg is the gap capacitance generated by the upper and lower electrodes in the middle of the ELC resonator, Cp is the intercellular capacitance generated by the adjacent unit cells when the unit cells are arranged periodically, and the total equivalent capacitance of the two parts is C. The inductance L is the inductance generated by two highly symmetrical inductance loops, and the resonant frequency of the LC parallel resonant circuit can be calculated by equation (1).
The resonance frequency of the resonator is influenced by the equivalent capacitance value according to an equivalent circuit model. The capacitance value is calculated by the formula (2):
in the formula,and L can be calculated from the ELC resonator-related structural parameters,refthe composite dielectric constant of the structure formed by the sensor substrate and the temperature-sensitive film can be calculated by the formula (3):
ref＝1+q1(sub-1)+q2(r-1) (3)
wherein,subis a relative dielectric constant of the substrate,rq is the relative dielectric constant of the temperature-sensitive film1And q is2Are constants related to the structural parameters of the resonator.
When the measured temperature changes, the relative dielectric constant of the temperature sensitive filmrWill change. When the sensitive material adopts phenanthrene, when the temperature is higher than 72 ℃, the film disappears due to the sublimation of the phenanthrene,rdecrease to the relative dielectric constant of air, resulting inrefThe capacitance value C of the ELC resonator decreases, and the resonant frequency changes accordingly. Temperature threshold detection may be achieved by detecting a change in resonant frequency.
As an application example, the following describes a method for preparing the sensor of the present invention, wherein the preparation of the phenanthrene film can refer to fig. 4, and fig. 4 shows a flow for preparing the phenanthrene temperature-sensitive film in the RFID sensor of the present invention. The method specifically comprises the following steps:
a. a substrate is selected.
b. An ELC resonator is provided on the surface of the substrate.
c. The method comprises the steps of firstly, putting phenanthrene powder into tetrahydrofuran solution, wherein 1.78g of phenanthrene powder is dissolved in every 100ml of tetrahydrofuran solution, then, completely dissolving the phenanthrene powder at 60 ℃ through magnetic stirring, generally, completely dissolving the phenanthrene powder within about 20 minutes, and then, covering the solution on the surface of an ELC resonator through a dropping coating method. Besides, the preparation method of the conventional organic thin film such as a spin coating method, a dip coating method and the like can be used, and for the flexible substrate, a screen printing or ink-jet printing method can be adopted, so that the solution is finally covered on the surface of the ELC resonator.
d. Drying at 40 deg.C for 2 hr.
Through the method, the phenanthrene film with a certain thickness, such as about 200um phenanthrene film, can be formed on the surface of the resonator.
Through the analysis, the processes used by the manufacturing method of the sensor are mature processes in the prior art, and the processes are very simple and convenient, so that the production efficiency and the yield of the sensor are very high, and the production cost is very low. The method is favorable for large-scale popularization and application in the existing rapidly developed Internet of things.
If other materials are used for the temperature sensitive material layer 1, the sensor of the present invention can be manufactured by referring to the above manufacturing method.
FIG. 5 is a schematic diagram of an RFID sensor detection system. The two horn antennas are respectively used as an electromagnetic wave transmitting antenna 4 and an electromagnetic wave receiving antenna 6, the two antennas are respectively connected to two ports of a vector network analyzer 7, and the distance between the antenna and the label is more than 5 cm. The sensor 5 is positioned on the electromagnetic wave transmission path and can absorb the electromagnetic wave at the resonance frequency point, so that the receiving end receives the electromagnetic wave with resonance information. By detecting the insertion loss (S in the figure) of the electromagnetic wave21) The rule that the resonance characteristic of the sensor changes along with the temperature can be obtained.
FIG. 6 is a graph of the results of RFID sensor testing in accordance with an embodiment of the present invention. The resonant frequency of the sensor is 2.384GHz at a test temperature of 20 c and 2.449GHz at a test temperature of 80 c, the frequency shift being 65MHz, indicating that the measured temperature has exceeded the threshold temperature.
The application range of the sensor of the present invention is quite broad as described above, and the following describes the use of the sensor of the present invention.
As shown in fig. 7, the present invention can be combined with related devices in the prior art to form a temperature alarm device. The chip-free RFID temperature threshold sensor comprises a chip-free RFID temperature threshold sensor and an RFID card reader, wherein the RFID card reader is used for transmitting electromagnetic waves to the sensor and receiving reverse electromagnetic waves, the RFID card reader is connected with a detection processing module, the detection processing module is connected with an alarm module, the detection processing module is used for detecting the offset of resonance frequency in the frequency spectrum of the electromagnetic waves received by the RFID card reader, the RFID card reader can send read frequency information to the detection processing module through a wireless receiving and transmitting module, when the offset is larger than or equal to a preset value, the detection processing module starts the alarm module, and the detection processing module can be a PC (personal computer) or a singlechip system and the like.
Taking the sensor made of the phenanthrene film as an example, the sensor can be attached to the surface of the shell of an explosive article when the explosive article is transported. When the temperature of the explosive article exceeds the threshold temperature by 72 ℃, the phenanthrene film is sublimated, the capacitance value C in the ELC resonator is reduced, and finally the resonant frequency is changed correspondingly, the RFID card reader can send the read frequency information to the detection processing module through the wireless transceiving module, the detection processing module detects that the offset of the frequency is larger than or equal to a preset value, for example, the frequency in FIG. 6 is offset by 65MHz, and the 65MHz can be used as the preset value. An alarm module is then activated to alarm, for example an audible and visual alarm. Therefore, related personnel can be prompted that the explosive article is in an unstable state and emergency measures need to be taken.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The chipless RFID temperature threshold sensor is characterized by comprising a base body, wherein an ELC resonator is arranged on the surface of the base body, and a temperature sensitive material layer capable of generating solid-gas phase change is covered on the surface of the ELC resonator.
2. The chipless RFID temperature threshold sensor of claim 1, wherein the layer of temperature sensitive material is a phenanthrene film.
3. The chipless RFID temperature threshold sensor of claim 1, wherein the substrate is a flexible substrate or a rigid substrate.
4. The temperature alarm device is characterized by comprising the chipless RFID temperature threshold sensor as claimed in claim 1, and further comprising an RFID card reader, wherein the RFID card reader is used for transmitting electromagnetic waves to the sensor and receiving reverse electromagnetic waves, the RFID card reader is connected with the detection processing module, the detection processing module is connected with the alarm module, the detection processing module is used for detecting the offset of the resonant frequency in the frequency spectrum of the electromagnetic waves received by the RFID card reader, and when the offset is larger than or equal to a preset value, the detection processing module starts the alarm module.
5. A temperature warning device according to claim 4, wherein the layer of temperature sensitive material is a phenanthrene film.
6. The temperature warning device of claim 4, wherein the substrate is a flexible substrate or a rigid substrate.
7. The method of producing a chipless RFID temperature threshold sensor of claim 1, comprising:
a. selecting a substrate;
b. an ELC resonator is arranged on the surface of the substrate;
c. covering a temperature sensitive material on the surface of the ELC resonator;
d. and (5) drying.
8. The production method according to claim 7, wherein the temperature sensitive material is phenanthrene powder, in the step c, the phenanthrene powder is firstly placed in a tetrahydrofuran solution, the phenanthrene powder is completely dissolved by magnetic stirring at 60 ℃, and in the step d, the phenanthrene powder is dried at 40 ℃.
9. The method of claim 7, wherein in step a, the substrate is a rigid substrate or a flexible substrate.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019174097A1 (en) * | 2018-03-16 | 2019-09-19 | 无锡市好达电子有限公司 | Surface acoustic wave material and manufacturing method thereof |
| CN112381199A (en) * | 2020-10-22 | 2021-02-19 | 上海中卡智能卡有限公司 | Disposable passive RFID tag for temperature detection |
| WO2022113553A1 (en) * | 2020-11-25 | 2022-06-02 | コニカミノルタ株式会社 | Sensor tag, and state detecting system |
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