CN106970117A - A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor - Google Patents

A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor Download PDF

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CN106970117A
CN106970117A CN201710188649.4A CN201710188649A CN106970117A CN 106970117 A CN106970117 A CN 106970117A CN 201710188649 A CN201710188649 A CN 201710188649A CN 106970117 A CN106970117 A CN 106970117A
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electrode member
electrode
sensor
zno
gas
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CN106970117B (en
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沈岩柏
陈享享
钟祥熙
李停停
魏德洲
韩聪
崔宝玉
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Northeastern University China
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    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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    • G01N27/127Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles

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Abstract

The present invention relates to a kind of NO based on electrode surface growth in situ nano-ZnO2Sensor, belongs to the gas sensor technical field of one dimension semiconductor metal oxide materials.A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor, it is characterised in that:The sensor be as obtained by the growth in situ ZnO nanowire array on electrode member, wherein, a diameter of 80~100nm of ZnO nano-wire, length is 600nm~1 μm, and the crystal structure of ZnO nano-wire is hexagonal phase wurtzite crystal structure.Gas sensor of the present invention is obtained to NO in 250 DEG C of operating temperature2The peak response of gas, response and recovery time are short, and invertibity and selectivity are good, are the NO with good development prospect2Sensor.

Description

A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor
Technical field
The invention belongs to the gas sensor technical field of one dimension semiconductor metal oxide materials, and in particular to Yi Zhongji In the NO of electrode surface growth in situ ZnO nanowire array2Sensor and preparation method thereof.
Background technology
Nitrogen dioxide (NO2) it is a kind of toxic and harmful gas, mostly come from fuel combustion, industrial processes, city Vehicle exhaust etc..NO2Gas can cause the formation of acid rain and photochemical fog, and human health can be endangered when excessive, causes earth's surface Vegetation deterioration.Therefore to NO2Gas monitor effectively and in real time, can not only be effectively prevented from the hair of potential security incident It is raw, while being also follow-up NO2Gas treatment provides reliable early stage guarantee.
In recent years, the gas sensor based on different gas sensitives and conduction platform is developed rapidly.Common gas Quick material includes:Metal oxide semiconductor, conducting polymer, macromolecule and its compound, metal oxide/macromolecule are combined Material and other new materials etc..These gas sensitives may apply to different transmission units, such as chemical-electrical resistive, table Face sound wave type (SAW), QCM formula (QCM), optic delivery formula, field effect transistor tubular type etc..Passed in these gases In sensor, the chemical-electrical resistive gas sensor based on metal oxide semiconductor material is due to low production cost, Gao Ling Sensitivity, fast-response/resume speed, it is easy to use the features such as, be widely used.Presently commercially available NO2Sensor is used Be SnO mostly2, ZnO or WO3Nano thin-film, nano particle and the micron spherical structure of base are used as gas sensitive.Relative to one Dimension nano material, the gas sensitive structure based on above-mentioned microstructure has that specific surface area is small, the low deficiency of surface-active, so that Cause sensitivity relatively low and response/recovery time is longer.Therefore, more concerns are placed on nanotube, nano wire, received by researcher The synthesis and its application of the monodimension nanometer materials such as rice rod and the one-dimensional material array being made from it are upper, and with nano-wire array Gas sensitive, due to structure is single, specific surface area and the features such as high surface-active, make it most promising gas One of quick material.
ZnO is a kind of important semiconductor material with wide forbidden band, and its energy gap is 3.37eV at room temperature.Based on ZnO nano The gas sensor of linear array is to NO2Gas has excellent air-sensitive performance.Preparing the method for ZnO nanowire array at present has: Catalytic reaction growth method, template, chemical vapour deposition technique, metal organic vapor based on gas-liquid-solid (VLS) mechanism Growth method, wet chemistry method and chemical solution method etc..These methods are typically that ZnO nanowire array is first synthesized on substrate, with The ZnO nanowire array product on substrate is transferred on electrode surface when prepared by gas sensor afterwards, finally carried out again corresponding Gas-sensitive property detection.However, the primary morphology that the preparation flow technique does not only result in ZnO nanowire array product occurs to break It is bad, nor the original air-sensitive performance of ZnO nanowire array product can be reflected exactly.
The content of the invention
For the deficiency for preparing the complicated technique of ZnO nanowire array at present and its existing in terms of gas-sensitive property, this hair It is bright that a kind of NO based on electrode surface growth in situ ZnO nanowire array is provided2Sensor and preparation method thereof, it is therefore an objective to pass through Thermal decomposition method is prepared with advantages of good crystallization, length in electrode surface formation ZnO Seed Layers, then using hydro-thermal method in electrode surface in advance Footpath directly assembles them into sensitivity height, invertibity than high ZnO nanowire array after last thermally treated and burin-in process The NO for the advantages of good, response/recovery is rapid, selectivity is excellent2Sensor, to overcome existing NO2The preparation technology that sensor is present The deficiency such as complicated, response/recovery is slower.The present invention prepares gained NO2Sensor, simplifies, production cost drops with preparation flow It is low, the advantages of produced suitable for big batch metaplasia.
A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor, the sensor is by electrode member Obtained by upper growth in situ ZnO nanowire array, wherein,
A diameter of 80~the 100nm of ZnO nano-wire, length is 600nm~1 μm, and the crystal structure of ZnO nano-wire is six Square phase wurtzite crystal structure.
In above-mentioned technical proposal, the ZnO nanowire array is NO2Gas gas sensitive.
In above-mentioned technical proposal, gained ZnO nano-wire pattern rule, surface are smooth.
NO of the present invention2Electrode member material described in sensor can be ceramics or gold;Shape can for interdigital, pectination, Plane, tubulose etc., such as earthenware electrode member, plane gold electrode element or interdigital gold electrode element.
In above-mentioned technical proposal, the ZnO nanowire array, which is evenly distributed, is grown in electrode element surface.
Further, NO of the present invention2Sensor prepares gained as follows:
(1) electrode member is immersed in ethanol solution of the concentration for 0.001~0.01M Zinc diacetate dihydrate, dipping 5~ After 20s, 10~30min is dried at a temperature of 40~80 DEG C;This dipping-drying process is repeated 2~5 times;
(2) electrode member is positioned in electric tube furnace, 300~400 DEG C is warming up to simultaneously with the 10 DEG C/min rate of heat addition 10~40min is heat-treated in atmosphere, naturally cools to room temperature;
(3) it is 1 by volume by the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution of same concentrations:1 mixes Close, stir at room temperature, obtain mixed solution, wherein, the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution it is dense Spend for 0.01~0.1M;
(4) mixed solution is transferred in ptfe autoclave inner bag, then by the electricity of gained after step (2) processing Pole element is immersed in the mixed solution, and reactor is placed in drying box after enclosed package, and 12h is reacted at a temperature of 80 DEG C; Question response terminates and naturally cooled to after room temperature, takes out electrode member, washing, then electrode member is transferred in drying box, in 30min is dried at a temperature of 60 DEG C;
(5) dried electrode member is placed in electric tube furnace, 350 are warming up to the 10 DEG C/min rate of heat addition~ 450 DEG C and in atmosphere be heat-treated 2~8h;After electrode member naturally cools to room temperature, air-sensitive test system is welded to Pedestal on be placed on agingtable 6~24h of aging at a temperature of 350~450 DEG C, both.
It is a further object of the present invention to provide above-mentioned NO2The preparation method of sensor, methods described is walked including following techniques Suddenly:
(1) electrode member is immersed in ethanol solution of the concentration for 0.001~0.01M Zinc diacetate dihydrate, dipping 5~ After 20s, 10~30min is dried at a temperature of 40~80 DEG C;This dipping-drying process is repeated 2~5 times;
(2) electrode member is positioned in electric tube furnace, 300~400 DEG C is warming up to simultaneously with the 10 DEG C/min rate of heat addition 10~40min is heat-treated in atmosphere, naturally cools to room temperature;
(3) it is 1 by volume by the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution of same concentrations:1 mixes Close, stir at room temperature, obtain mixed solution, wherein, the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution it is dense Spend for 0.01~0.1M;
(4) mixed solution is transferred in ptfe autoclave inner bag, then by the electricity of gained after step (2) processing Pole element is immersed in the mixed solution, and reactor is placed in drying box after enclosed package, and 12h is reacted at a temperature of 80 DEG C; Question response terminates and naturally cooled to after room temperature, takes out electrode member, washing, then electrode member is transferred in drying box, in 30min is dried at a temperature of 60 DEG C;
(5) dried electrode member is placed in electric tube furnace, 350 are warming up to the 10 DEG C/min rate of heat addition~ 450 DEG C and in atmosphere be heat-treated 2~8h;After electrode member naturally cools to room temperature, air-sensitive test system is welded to Pedestal on be placed on agingtable 6~24h of aging at a temperature of 350~450 DEG C, both.
In above-mentioned technical proposal, in step (1), the drying can be carried out in drying box;The electrode member is in immersion Zinc diacetate dihydrate (Zn (CH3COO)2·2H2O preferably advanced water-filling is washed, ethanol is washed and dried before in ethanol solution).
It is commercially available in the air-sensitive test system and agingtable in step (5) in above-mentioned technical proposal.
In above-mentioned technical proposal, the electricity that electrode element surface has layer of ZnO crystal seed layer is obtained after step (1) and (2) processing Pole element.
In above-mentioned technical proposal, in step (3), preferably by the zinc nitrate hexahydrate aqueous solution and six methines of same concentrations Four amine aqueous solutions are 1 by volume:1 mixing, magnetic agitation 3min, obtains mixed solution at room temperature, wherein, zinc nitrate hexahydrate water The concentration of solution is 0.01~0.1M, and the concentration of the hexamethylenetetramine aqueous solution is 0.01~0.1M.
In above-mentioned technical proposal, in step (3) and (4), six hydrations that preferably each configuration 25mL concentration is 0.01~0.1M Zinc nitrate aqueous solution and the hexamethylenetetramine aqueous solution, and both are well mixed to obtain mixed solution;Mixed solution is placed in In 200mL ptfe autoclave inner bags, the electrode member of gained after step (2) processing is then immersed into the mixed solution In, reactor is placed in drying box after enclosed package, 12h is reacted at a temperature of 80 DEG C;Question response terminates and natural cooling To room temperature, electrode member, washing are taken out, then electrode member is transferred in drying box, 30min is dried at a temperature of 60 DEG C;
Gas sensor element of the present invention based on electrode surface growth in situ ZnO nanowire array gas sensitive Heat treatment and burin-in process, in order to keep the structure of gas sensitive and the stabilization of gas sensor performance.
Compared with existing technology of preparing, the features of the present invention and beneficial effect are:
The invention provides a kind of NO based on electrode surface growth in situ ZnO nanowire array2Sensor and its preparation Method.From preparation method, the present invention prepares Seed Layer by thermal decomposition method in electrode surface first, then using hydro-thermal Method is prepared with advantages of good crystallization, the ZnO nanowire array that draw ratio is high, surface-active is strong in electrode surface, last thermally treated And gas sensor is prepared into after burin-in process.The inventive method is prepared simply, and easy to operate, whole flow process is easily achieved, and is had The problem of traditional gas sensor preparation technology is complicated is solved to effect, and is conducive to large-scale industrial production.Pass through the party Gas sensor prepared by method is obtained to NO in 250 DEG C of operating temperature2The peak response of gas, response and recovery time Short, invertibity and selectivity are good, are the NO with good development prospect2Sensor.
Brief description of the drawings
Fig. 1 is the NO based on earthenware electrode element surface growth in situ ZnO nanowire array in embodiment 1~32Pass Sensor component structural representation;Wherein:1:Earthenware;2:Gold electrode;3:Platinum lead;4:Gas sensitive layer;
Fig. 2 be embodiment 1 in ZnO nanowire array X ray diffracting spectrum;
Fig. 3 is the electron scanning micrograph of (a) electrode member and (b) ZnO nanowire array in embodiment 1;
Fig. 4 be embodiment 1 in single ZnO nano-wire transmission electron microscope photo;
Fig. 5 be gas sensor in embodiment 1 in 250 DEG C of operating temperature to various concentrations NO2The dynamic of gas is rung Answer curve map;
Fig. 6 is gas sensor in embodiment 1 sensitivity and NO in 250 DEG C of operating temperature2Between gas concentration Graph of a relation;
Fig. 7 be gas sensor in embodiment 1 in 250 DEG C of operating temperature to the sensitive of various concentrations detected gas Degree;
Fig. 8 is the NO based on plane gold electrode surfaces growth in situ ZnO nanowire array in embodiment 42Sensor member Part structural representation;Wherein:5:Platinum lead;6:Ceramic substrate;7:Gas sensitive layer;8:Gold electrode;9:Adding thermal resistance;
Fig. 9 is the NO based on interdigital gold electrode surfaces growth in situ ZnO nanowire array in embodiment 52Sensor member Part structural representation;Wherein:10:Ceramic substrate;11:Adding thermal resistance;12:Gas sensitive layer;13:Interdigital gold electrode;14:Platinum Lead.
Embodiment
Following non-limiting examples can make one of ordinary skill in the art be more fully understood the present invention, but not with Any mode limits the present invention.
Test method described in following embodiments, is conventional method unless otherwise specified;The reagent, material and set It is standby, unless otherwise specified, commercially obtain.
Air-sensitive test system described in following embodiments is bright Sheng science and technology WS-30A type air-sensitive test systems;The agingtable For bright Sheng science and technology TS-60 type agingtables.
Embodiment 1
NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor element, its structural representation Figure earthenware, gold electrode, platinum lead and air-sensitive material layer as shown in figure 1, be made up of.Gold electrode overlays on ceramic pipe surface, platinum Gold wire is welded on gold electrode surfaces, and gas sensitive is grown in whole earthenware and gold electrode surfaces.Described gas sensitive into It is divided into ZnO nanowire array, it, which is evenly distributed, is grown in electrode element surface, ZnO nano-wire pattern rule, surface are smooth, And with single hexagonal phase wurtzite crystal structure, a diameter of 80~100nm, length is 600nm~1 μm, draw ratio is high.
A kind of NO based on ceramic electrode surface in situ growing ZnO nano-wire array gas sensitive2Sensor and its preparation Method, is followed the steps below:
(1) first by electrode member respectively with deionized water and washes of absolute alcohol 3 times, and hot blast drying is used;
(2) 0.005M Zinc diacetate dihydrate (Zn (CH are prepared3COO)2·2H2O ethanol solution 20mL);
(3) Zn (CH for immersing the electrode member in step (1) in step (2)3COO)2·2H2O ethanol solution, leaching After stain 10s, take out electrode member and transfer them in drying box, 15min is dried at a temperature of 60 DEG C, by this dipping-drying Process is repeated 3 times;
(4) electrode member in step (3) is placed in electric tube furnace, be warming up to 10 DEG C/min heating rate And 20min is heat-treated in atmosphere, be then turned off electric tube furnace power supply, allow it to naturally cool to room temperature, obtain surface and contain by 350 DEG C The electrode member of ZnO Seed Layers;
(5) 0.05M zinc nitrate hexahydrate (Zn (NO are prepared3)2·6H2O) and 0.05M hexamethylenetetramine (HMTA) Each 25mL of the aqueous solution;Then, two kinds of solution are mixed, at room temperature magnetic agitation 3min;
(6) mixed solution by configuration in (5) is transferred in 200mL ptfe autoclave inner bag, then by (4) In the electrode member of the Seed Layer containing ZnO immerse in the mixed solution, reactor is placed in drying box after enclosed package, in 12h is reacted at a temperature of 80 DEG C;Question response terminates and naturally cooled to after room temperature, takes out electrode member, 3 are cleaned with deionized water It is secondary, then electrode member is transferred in drying box, 30min is dried at a temperature of 60 DEG C;
(7) dried electrode member is placed in electric tube furnace, 400 DEG C is warming up to 10 DEG C/min heating rate And 4h is heat-treated in atmosphere;After electrode member naturally cools to room temperature, heater strip is passed through to the earthenware of electrode member, weldering Heater strip and platinum lead are connect to the element base of air-sensitive test system, the aging at a temperature of 400 DEG C is placed on agingtable 12h, it is final to obtain the NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor.
X ray diffracting spectrum based on earthenware electrode element surface growth in situ ZnO nano-wire is as shown in Figure 2.As a result Show, the product generated in electrode surface is single hexagonal phase wurtzite crystal structure, and spreading out without any other impurity Peak is penetrated, shows that crystalline condition is excellent.The scanning electron microscopy of electrode member and the ZnO nanowire array grown in its surface in situ Mirror photo is respectively as shown in Fig. 3 (a) and Fig. 3 (b).It should be apparent that the electrode member by earthenware, gold from Fig. 3 (a) Electrode, platinum lead and air-sensitive material layer composition.It was found from from Fig. 3 (b), the uniform rule of ZnO nano-wire is in array-like distribution On the surface of electrode member, nanowire diameter is 80~100nm, and length is 600nm~1 μm, and draw ratio is high.Single ZnO nano The transmission electron microscope photo of line is as shown in figure 4, the as can be seen from the figure smooth rule in ZnO nano-wire surface, diameter and length Degree respectively may be about 80nm and 1 μm, be consistent with the result of scanning electron microscope diagram piece.
Gas sensor based on ZnO nanowire array is in 250 DEG C of operating temperature to various concentrations NO2The dynamic of gas Response curve is as shown in Figure 5.From figure 5 it can be seen that the gas sensor in 250 DEG C of operating temperature to NO2Gas has Faster response/recovery time, continuously it is being passed through 1~30ppm various concentrations NO2In the reaction time of gas, the gas sensing Device is respectively provided with good response invertibity, and resistance variations are with NO2Incremental trend is presented in the increase of gas concentration, shows Sensitivity is with NO2The increase of gas concentration and increase, its corresponding sensitivity and NO2Relation such as Fig. 6 between gas concentration It is shown.
Gas sensor based on ZnO nanowire array is in 250 DEG C of operating temperature to various concentrations detected gas Sensitivity is as shown in fig. 7, detected gas therein is 1000ppm sulfur dioxide (SO2), hydrogen (H2), ammonia (NH3) and 500ppm formaldehyde (HCHO), methanol (CH3OH), dimethylbenzene (C8H10), and 5ppm NO2Gas.It can be seen that Gas sensor based on ZnO nanowire array is to NO2The sensitivity highest of gas, selectivity preferably, shows in complicated gas To NO under environment2Gas has good identification result and practical application advantage.
Embodiment 2
NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor element, its structural representation Figure earthenware, gold electrode, platinum lead and air-sensitive material layer as shown in figure 1, be made up of.Gold electrode overlays on ceramic pipe surface, platinum Gold wire is welded on gold electrode surfaces, and gas sensitive is grown in whole earthenware and gold electrode surfaces.Described gas sensitive into It is divided into ZnO nanowire array, it is evenly distributed the surface for being grown in electrode member, ZnO nano-wire pattern rule, surface light It is sliding, and with single hexagonal phase wurtzite crystal structure, a diameter of 80~100nm, length is 600nm~1 μm, draw ratio It is high.
A kind of NO based on earthenware electrode element surface growth in situ ZnO nanowire array gas sensitive2Sensor and Its preparation method, is followed the steps below:
(1) first by electrode member respectively with deionized water and washes of absolute alcohol 3 times, and hot blast drying is used;
(2) 0.001M Zinc diacetate dihydrate (Zn (CH are prepared3COO)2·2H2O ethanol solution 20mL);
(3) Zn (CH for immersing the electrode member in step (1) in step (2)3COO)2·2H2O ethanol solution, leaching After stain 20s, take out electrode member and transfer them in drying box, 30min is dried at a temperature of 40 DEG C, by this dipping-drying Process is repeated 5 times;
(4) electrode member in step (3) is placed in electric tube furnace, be warming up to the 10 DEG C/min rate of heat addition And 40min is heat-treated in atmosphere, be then turned off electric tube furnace power supply, allow it to naturally cool to room temperature, obtain surface and contain by 300 DEG C The electrode member of ZnO Seed Layers;
(5) 0.01M zinc nitrate hexahydrate (Zn (NO are prepared3)2·6H2O) and 0.01M hexamethylenetetramine (HMTA) Each 25mL of the aqueous solution;Then, two kinds of solution are mixed, at room temperature magnetic agitation 3min;
(6) mixed solution by configuration in (5) is transferred in 200mL ptfe autoclave inner bag, then by (4) In the electrode member of the Seed Layer containing ZnO immerse in the mixed solution, reactor is placed in drying box after enclosed package, in 12h is reacted at a temperature of 80 DEG C;Question response terminates and naturally cooled to after room temperature, takes out electrode member, 3 are cleaned with deionized water It is secondary, then electrode member is transferred in drying box, 30min is dried at a temperature of 60 DEG C;
(7) dried electrode member is placed in electric tube furnace, 350 DEG C is warming up to 10 DEG C/min firing rate And 8h is heat-treated in atmosphere;After electrode member naturally cools to room temperature, heater strip is passed through to the earthenware of electrode member, weldering Heater strip and platinum lead are connect to the element base of air-sensitive test system, the aging at a temperature of 350 DEG C is placed on agingtable 6h, it is final to obtain the NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor.
After testing, the NO manufactured in the present embodiment based on ZnO nanowire array2Sensor is in 100~350 DEG C of operating temperature Under the conditions of to NO2Gas has good air-sensitive performance.
Embodiment 3
NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor element, its structural representation Figure earthenware, gold electrode, platinum lead and air-sensitive material layer as shown in figure 1, be made up of.Gold electrode overlays on ceramic pipe surface, platinum Gold wire is welded on gold electrode surfaces, and gas sensitive is grown in whole earthenware and gold electrode surfaces.Described gas sensitive into It is divided into ZnO nanowire array, it is evenly distributed the surface for being grown in electrode member, ZnO nano-wire pattern rule, surface light It is sliding, and with single hexagonal phase wurtzite crystal structure, a diameter of 80~100nm, length is 600nm~1 μm, draw ratio It is high.
A kind of NO based on earthenware electrode element surface growth in situ ZnO nanowire array gas sensitive2Sensor and Its preparation method, is followed the steps below:
(1) first by electrode member respectively with deionized water and washes of absolute alcohol 3 times, and hot blast drying is used;
(2) 0.01M Zinc diacetate dihydrate (Zn (CH are prepared3COO)2·2H2O ethanol solution 20mL);
(3) Zn (CH for immersing the electrode member in step (1) in step (2)3COO)2·2H2O ethanol solution, leaching After stain 5s, take out electrode member and transfer them in drying box, 10min is dried at a temperature of 80 DEG C, by this dipping-drying Process is repeated 2 times;
(4) electrode member in step (3) is placed in electric tube furnace, be warming up to the 10 DEG C/min rate of heat addition And 10min is heat-treated in atmosphere, be then turned off electric tube furnace power supply, allow it to naturally cool to room temperature, obtain surface and contain by 400 DEG C The electrode member of ZnO Seed Layers;
(5) 0.1M zinc nitrate hexahydrate (Zn (NO are prepared3)2·6H2) and 0.1M hexamethylenetetramines (HMTA) are water-soluble O Each 25mL of liquid;Then, two kinds of solution are mixed, at room temperature magnetic agitation 3min;
(6) mixed solution by configuration in (5) is transferred in 200mL ptfe autoclave inner bag, then by (4) In the electrode member of the Seed Layer containing ZnO immerse in the mixed solution, reactor is placed in drying box after enclosed package, in 12h is reacted at a temperature of 80 DEG C;Question response terminates and naturally cooled to after room temperature, takes out electrode member, 3 are cleaned with deionized water It is secondary, then electrode member is transferred in drying box, 30min is dried at a temperature of 60 DEG C;
(7) dried electrode member is placed in electric tube furnace, 450 DEG C is warming up to the 10 DEG C/min rate of heat addition And 2h is heat-treated in atmosphere;After electrode member naturally cools to room temperature, heater strip is passed through to the earthenware of electrode member, weldering Heater strip and platinum lead are connect on the element base of air-sensitive test system, the aging at a temperature of 450 DEG C is placed on agingtable 24h, it is final to obtain the NO based on earthenware electrode element surface growth in situ ZnO nanowire array2Sensor.
After testing, the NO manufactured in the present embodiment based on ZnO nanowire array2Sensor is right under the conditions of 100~350 DEG C NO2Gas has good air-sensitive performance.
Embodiment 4
NO based on plane gold electrode surfaces growth in situ ZnO nanowire array2Sensor element, its electrode member front Shown in structural representation such as Fig. 8 (a), it is made up of ceramic substrate, gold electrode, platinum lead and air-sensitive material layer, gold electrode is overlayed on Ceramic base plate surface, platinum lead is welded on above gold electrode, and gas sensitive is grown in whole ceramic substrate and gold electrode surfaces. (shown in such as Fig. 8 (b)) is made up of adding thermal resistance and platinum lead at the electrode member back side.Described gas sensitive composition is received for ZnO Nanowire arrays, it is evenly distributed the front for being grown in electrode member, and ZnO nano-wire pattern rule, surface are smooth, and with single One hexagonal phase wurtzite crystal structure, a diameter of 80~100nm, length is 600nm~1 μm, and draw ratio is high.
A kind of NO based on plane gold electrode surfaces growth in situ ZnO nanowire array gas sensitive2Sensor and its system Preparation Method, is followed the steps below:
(1) first by electrode member respectively with deionized water and washes of absolute alcohol 3 times, and hot blast drying is used;
(2) 0.005M Zinc diacetate dihydrate (Zn (CH are prepared3COO)2·2H2O ethanol solution 20mL);
(3) Zn (CH for immersing the electrode member in step (1) in step (2)3COO)2·2H2O ethanol solution, leaching After stain 10s, take out electrode member and transfer them in drying box, 15min is dried at a temperature of 60 DEG C, by this dipping-drying Process is repeated 3 times;
(4) electrode member in step (3) is placed in electric tube furnace, be warming up to the 10 DEG C/min rate of heat addition And 20min is heat-treated in atmosphere, be then turned off electric tube furnace power supply, allow it to naturally cool to room temperature, obtain surface and contain by 350 DEG C The electrode member of ZnO Seed Layers;
(5) 0.05M zinc nitrate hexahydrate (Zn (NO are prepared3)2·6H2O) and 0.05M hexamethylenetetramine (HMTA) Each 25mL of the aqueous solution;Then, two kinds of solution are mixed, at room temperature magnetic agitation 3min;
(6) mixed solution of configuration in (5) is moved into 200mL ptfe autoclave inner bag, then by (4) The electrode member of the Seed Layer containing ZnO immerse in the mixed solution, reactor is placed in drying box after enclosed package, in 80 12h is reacted at a temperature of DEG C;Question response terminates and naturally cooled to after room temperature, takes out electrode member, is cleaned with deionized water 3 times, Electrode member is transferred in drying box again, 30min is dried at a temperature of 60 DEG C;
(7) dried electrode member is placed in electric tube furnace, 400 DEG C is warming up to the 10 DEG C/min rate of heat addition And 4h is heat-treated in atmosphere;After electrode member naturally cools to room temperature, electrode member is welded to air-sensitive test system On element base, the aging 12h at a temperature of 400 DEG C is placed on agingtable, it is final to obtain in situ based on plane gold electrode surfaces The NO of growing ZnO nano-wire array2Sensor.
After testing, the NO manufactured in the present embodiment based on ZnO nanowire array2Sensor is right under the conditions of 100~350 DEG C NO2Gas has good air-sensitive performance.
Embodiment 5
NO based on interdigital gold electrode surfaces growth in situ ZnO nanowire array2Sensor element, its structural representation is such as Shown in Fig. 9, electrode member front is made up of ceramic substrate, interdigital gold electrode, platinum lead and air-sensitive material layer, wherein interdigital gold Electrode overlays on ceramic substrate front, and platinum lead is welded on above interdigital gold electrode, adding thermal resistance overlays on the ceramic substrate back side, gas Quick Material growth is in ceramic substrate and interdigital gold electrode surfaces.Described gas sensitive composition is ZnO nanowire array, and its is uniform Ground is distributed the front for being grown in electrode member, and ZnO nano-wire pattern rule, surface are smooth, and with the fine zinc of single hexagonal phase Ore deposit crystal structure, a diameter of 80~100nm, length is 600nm~1 μm, and draw ratio is high.
A kind of NO based on interdigital gold electrode surfaces growth in situ ZnO nanowire array gas sensitive2Sensor and its system Preparation Method, is followed the steps below:
(1) first by electrode member respectively with deionized water and alcohol washes 3 times, and hot blast drying is used;
(2) 0.005M Zinc diacetate dihydrate (Zn (CH are prepared3COO)2·2H2O ethanol solution 20mL);
(3) Zn (CH for immersing the electrode member in step (1) in step (2)3COO)2·2H2O ethanol solution, leaching After stain 10s, take out electrode member and transfer them in drying box, 15min is dried at a temperature of 60 DEG C, by this dipping-drying Process is repeated 3 times;
(4) electrode member in step (3) is placed in electric tube furnace, be warming up to the 10 DEG C/min rate of heat addition And 20min is heat-treated in atmosphere, be then turned off electric tube furnace power supply, allow it to naturally cool to room temperature, obtain surface and contain by 350 DEG C The electrode member of ZnO Seed Layers;
(5) 0.05M zinc nitrate hexahydrate (Zn (NO are prepared3)2·6H2O) and 0.05M hexamethylenetetramine (HMTA) Each 25mL of the aqueous solution;Then, two kinds of solution are mixed, at room temperature magnetic agitation 3min;
(6) mixed solution of configuration in (5) is moved into 200mL ptfe autoclave inner bag, then by (4) The electrode member of the Seed Layer containing ZnO immerse in the mixed solution, reactor is placed in drying box after enclosed package, in 80 12h is reacted at a temperature of DEG C;Question response terminates and naturally cooled to after room temperature, takes out electrode member, is cleaned with deionized water 3 times, Electrode member is transferred in drying box again, 30min is dried at a temperature of 60 DEG C;
(7) dried electrode member is placed in electric tube furnace, 400 DEG C is warming up to the 10 DEG C/min rate of heat addition And 4h is heat-treated in atmosphere;After electrode member naturally cools to room temperature, electrode member is welded to air-sensitive test system On element base, the aging 12h at a temperature of 400 DEG C is placed on agingtable, it is final to obtain in situ based on interdigital gold electrode surfaces The NO of growing ZnO nano-wire array2Sensor.
After testing, the NO manufactured in the present embodiment based on ZnO nanowire array2Sensor is right under the conditions of 100~350 DEG C NO2Gas has good air-sensitive performance.

Claims (6)

1. a kind of NO based on electrode surface growth in situ nano-ZnO2Sensor, it is characterised in that:The sensor be by On electrode member obtained by growth in situ ZnO nanowire array, wherein,
A diameter of 80~the 100nm of ZnO nano-wire, length is 600nm~1 μm, and the crystal structure of ZnO nano-wire is hexagonal phase Wurtzite crystal structure.
2. sensor according to claim 1, it is characterised in that:The ZnO nanowire array is gas sensitive, and its is uniform Ground distribution is grown in electrode element surface.
3. sensor according to claim 1, it is characterised in that:The material of the electrode member is ceramics or gold.
4. sensor according to claim 1, it is characterised in that:The electrode member is tubulose, plane, pectination or interdigital Electrode member.
5. sensor according to claim 1, it is characterised in that:The electrode member is tubular ceramic electrode member, put down Face gold electrode element or interdigital gold electrode element.
6. the preparation method of sensor described in claim 1, it is characterised in that:Including following processing steps:
(1) electrode member is immersed in ethanol solution of the concentration for 0.001~0.01M Zinc diacetate dihydrate, impregnates 5~20s Afterwards, 10~30min is dried at a temperature of 40~80 DEG C;This dipping-drying process is repeated 2~5 times;
(2) electrode member is positioned in electric tube furnace, 300~400 DEG C is warming up to and in sky with the 10 DEG C/min rate of heat addition 10~40min is heat-treated in gas, room temperature is naturally cooled to;
(3) it is 1 by volume by the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution of same concentrations:1 mixing, room Stirred under temperature, obtain mixed solution, wherein, the concentration of the zinc nitrate hexahydrate aqueous solution and the hexamethylenetetramine aqueous solution is 0.01~0.1M;
(4) mixed solution is transferred in ptfe autoclave inner bag, then by the electrode member of gained after step (2) processing Part is immersed in the mixed solution, and reactor is placed in drying box after enclosed package, and 12h is reacted at a temperature of 80 DEG C;Treat anti- It should terminate and naturally cool to after room temperature, take out electrode member, washing, then electrode member is transferred in drying box, in 60 DEG C At a temperature of dry 30min;
(5) dried electrode member is placed in electric tube furnace, 350~450 is warming up to the 10 DEG C/min rate of heat addition DEG C and in atmosphere be heat-treated 2~8h;After electrode member naturally cools to room temperature, the base of air-sensitive test system is welded to 6~24h of aging at a temperature of 350~450 DEG C is placed on agingtable on seat, both.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107817279A (en) * 2017-09-28 2018-03-20 东北大学 A kind of NO based on electrode surface growth in situ NiO nano thin-films2Sensor
CN108492909A (en) * 2018-04-13 2018-09-04 中国工程物理研究院化工材料研究所 Mono-crystalline structures Co3O4Nano-wire array fibrous electrodes material and preparation method thereof
CN108956714A (en) * 2018-06-29 2018-12-07 五邑大学 ZnO/Si Nano/micron column array sensitive material and preparation method thereof and sensor
CN109580726A (en) * 2018-12-12 2019-04-05 北京化工大学 A method of direct growing ZnO nano-wire prepares gas sensor on the electrode
CN110261445A (en) * 2019-07-12 2019-09-20 东北大学 One kind growing nanometer In based on nonmetallic mineral electrode substrate surface in situ2O3Room temperature NO2Sensor and preparation method
CN110412086A (en) * 2019-08-02 2019-11-05 东北大学 One kind being based on perovskite structure ZnSnO3Isopropanol gas sensor of nanosphere and preparation method thereof
CN110498440A (en) * 2019-07-11 2019-11-26 江苏大学 A kind of zinc oxide air-sensitive membrane material, preparation method and applications
CN112763549A (en) * 2020-12-28 2021-05-07 光华临港工程应用技术研发(上海)有限公司 Preparation method of gas sensor and gas sensor
CN114993972A (en) * 2022-05-27 2022-09-02 江南大学 ZnO nanowire and NO 2 Gas sensor, its preparation and application
WO2023060742A1 (en) * 2021-10-15 2023-04-20 光华临港工程应用技术研发(上海)有限公司 Gas-sensitive nanomaterial having branched nanowire structure, preparation method therefor and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103880064A (en) * 2014-03-24 2014-06-25 济南大学 Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube
CN103713019B (en) * 2013-12-23 2015-09-16 浙江大学 Nano combined resistance type thin film gas sensor of zinc paste/polypyrrole and preparation method thereof
CN103400878B (en) * 2013-07-30 2016-04-06 天津大学 A kind of zinc-oxide nano pencil array electrode and its preparation method and application
CN107064218A (en) * 2016-10-31 2017-08-18 扬州大学 Based on reduced graphene semiconductor room temperature nitrogen dioxide sensor preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400878B (en) * 2013-07-30 2016-04-06 天津大学 A kind of zinc-oxide nano pencil array electrode and its preparation method and application
CN103713019B (en) * 2013-12-23 2015-09-16 浙江大学 Nano combined resistance type thin film gas sensor of zinc paste/polypyrrole and preparation method thereof
CN103880064A (en) * 2014-03-24 2014-06-25 济南大学 Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube
CN107064218A (en) * 2016-10-31 2017-08-18 扬州大学 Based on reduced graphene semiconductor room temperature nitrogen dioxide sensor preparation method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
丁会云: "水热法制备ZnO纳米棒工艺的优化", 《《中国优秀硕士学位论文全文数据库 工程科技I辑》》 *
张瑜: "不同维度的ZnO的水热合成及气敏性能研究", 《《中国优秀硕士学位论文全文数据库 工程科技I辑》》 *
陈伟良: "ZnO基纳米棒阵列气敏材料合成与性能", 《中国优秀硕士学位论文全文数据库 工程科技I辑》 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107817279A (en) * 2017-09-28 2018-03-20 东北大学 A kind of NO based on electrode surface growth in situ NiO nano thin-films2Sensor
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CN108956714A (en) * 2018-06-29 2018-12-07 五邑大学 ZnO/Si Nano/micron column array sensitive material and preparation method thereof and sensor
CN108956714B (en) * 2018-06-29 2021-01-12 五邑大学 ZnO/Si nano/micro column array sensitive material, preparation method thereof and sensor
CN109580726A (en) * 2018-12-12 2019-04-05 北京化工大学 A method of direct growing ZnO nano-wire prepares gas sensor on the electrode
CN110498440A (en) * 2019-07-11 2019-11-26 江苏大学 A kind of zinc oxide air-sensitive membrane material, preparation method and applications
CN110261445A (en) * 2019-07-12 2019-09-20 东北大学 One kind growing nanometer In based on nonmetallic mineral electrode substrate surface in situ2O3Room temperature NO2Sensor and preparation method
CN110412086A (en) * 2019-08-02 2019-11-05 东北大学 One kind being based on perovskite structure ZnSnO3Isopropanol gas sensor of nanosphere and preparation method thereof
CN112763549A (en) * 2020-12-28 2021-05-07 光华临港工程应用技术研发(上海)有限公司 Preparation method of gas sensor and gas sensor
WO2023060742A1 (en) * 2021-10-15 2023-04-20 光华临港工程应用技术研发(上海)有限公司 Gas-sensitive nanomaterial having branched nanowire structure, preparation method therefor and application thereof
CN114993972A (en) * 2022-05-27 2022-09-02 江南大学 ZnO nanowire and NO 2 Gas sensor, its preparation and application
CN114993972B (en) * 2022-05-27 2023-08-11 江南大学 ZnO nanowire and NO 2 Gas sensor, its preparation and application

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