CN106967978B - The film and its preparation method and application of gold nano grain assembling - Google Patents
The film and its preparation method and application of gold nano grain assembling Download PDFInfo
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- CN106967978B CN106967978B CN201710304337.5A CN201710304337A CN106967978B CN 106967978 B CN106967978 B CN 106967978B CN 201710304337 A CN201710304337 A CN 201710304337A CN 106967978 B CN106967978 B CN 106967978B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/006—Nanoparticles
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Abstract
The invention discloses a kind of films and its preparation method and application of gold nano grain assembling.Film is to be covered with mutually to stick into thick 200nm-2 μm of film by multilayer gold nano grain in conductive substrates, wherein the partial size of gold nano grain is 30-120nm, is each other≤gap or gap of 10nm；Method is the surface sputtering golden film prior to conductive substrates, obtains the conductive substrates that its surface is covered with golden film, then graphite flake is covered with the conductive substrates of golden film as anode, its surface and is placed in Gold electrolysis liquid for cathode, purpose product is made in the electro-deposition under constant current.Its SERS with higher activity, be extremely easy to widely commercial applications in the quick trace detection to pesticide methyl parathion.
Description
Technical field
The present invention relates to a kind of film and preparation method and purposes, the film of especially a kind of gold nano grain assembling and its
Preparation method and purposes.
Background technique
Due to the resonance property of surface phasmon, noble metal nano structure or micro-nano structure are in Surface-enhanced spectroscopic, especially
In terms of for SERS spectra, have a wide range of applications.In the recent period, people are in order to your gold with surface plasmon resonance property obtained
Belong to micro-nano structure, made some good tries and effort, such as entitled " Facile Fabrication of High-Density
Sub-1-nm Gaps from Au Nanoparticle Monolayers as Reproducible SERS
Substrates ", Adv.Funct.Mater.2016,26, (" simplicity preparation has high density sub-nanometer gap to 8137-8145
Single layer of gold nano-particular film is as repeatable SERS substrate ", " advanced function material ", 8137-8145 of volume 26 in 2016
Page) article.The single layer of gold nano-particular film referred in this article is in being covered in silicon chip substrate by single layer gold nano grain group
The film of dress；Preparation method is the single thin film that gold nano grain assembling is first obtained using liquid level self-assembly method, then by single thin layer
Film is transferred directly to clean silicon chip surface to obtain product.Though this product at 633nm and 785nm there is stronger light to inhale
It receives, but all there is shortcomings with preparation method, firstly, the gold nano grain in product is only single layer, not only constrain
The activity of its SERS, uniformity is also extremely easy to be destroyed by the solution to be measured such as water, to severely impact the equal of its SERS signal
Even property；Secondly, preparation method cannot be obtained with higher SERS activity and by the solution to be measured such as water not destroyed its SERS signal equal
The product of even property.
Summary of the invention
The technical problem to be solved in the present invention place in order to overcome the shortcomings in the prior art, provide it is a kind of it is structurally reasonable,
SERS activity is higher, and the film not assembled by the gold nano grain that the solution to be measured such as water destroys its SERS signal uniformity.
The invention solves another technical problem be that a kind of preparation of the film of above-mentioned gold nano grain assembling is provided
Method.
The invention solves another technical problem be that a kind of purposes of the film of above-mentioned gold nano grain assembling is provided.
To solve technical problem of the invention, used technical solution is that the film of gold nano grain assembling includes lining
The film being made of gold nano grain being covered on bottom, especially:
The substrate is conductive substrates；
The film being made of gold nano grain is that multilayer gold nano grain mutually sticks film forming, the multilayer gold nano
The film thickness that particle mutually sticks the film of film forming is 200nm-2 μm；
The partial size of the gold nano grain is 30-120nm, is each other≤gap or gap of 10nm.
The further improvement of film as gold nano grain assembling:
Preferably, conductive substrates are silicon chip substrate or indium oxide tin glass substrate, or the tin dioxide conductive glass of doping fluorine
Glass substrate.
To solve another technical problem of the invention, another used technical solution is above-mentioned gold nano grain
The preparation method of the film of assembling includes sputtering method, and especially key step is as follows:
Prior to the golden film of the surface sputtering 10-30nm thickness of conductive substrates, the conductive substrates that its surface is covered with golden film are obtained, then
It is that cathode is placed in Gold electrolysis liquid using graphite flake as the conductive substrates that anode, its surface are covered with golden film, in 20-500 μ A/cm2
Constant current under electro-deposition 20-120min, be made gold nano grain assembling film.
The further improvement of the preparation method of film as gold nano grain assembling:
Preferably, before the surface to conductive substrates sputters golden film, ethyl alcohol and deionized water cleaning are first used for.
Preferably, after being cleaned 1-3 times to the film of gold nano grain obtained assembling using deionized water, in 40-60 DEG C
Lower drying.
Preferably, conductive substrates are silicon chip substrate or indium oxide tin glass substrate, or the tin dioxide conductive glass of doping fluorine
Glass substrate.
Preferably, Gold electrolysis liquid is the aqueous solution of chloraurate of 0.2-10g/L and the polyvinylpyrrolidone of 2-200g/L
(K30) mixed liquor of aqueous solution.
Preferably, polyvinylpyrrolidone is the polyvinylpyrrolidone that its molecular weight is 40000.
To solve another technical problem of the invention, another used technical solution is above-mentioned gold nano grain
The purposes of the film of assembling are as follows:
Using the film of gold nano grain assembling as the active substrate of Surface enhanced Raman scattering, the wavelength of exciting light is used
For the content for the parathion-methyl that the laser Raman spectrometer measurement of 785nm is adhered to thereon.
The further improvement of the purposes of film as gold nano grain assembling:
Preferably, the power of the exciting light of laser Raman spectrometer be 0.1-2mW, time of integration 1-20s.
Beneficial effect compared with the existing technology is:
First, purpose product obtained is characterized using scanning electron microscope, as a result, it can be seen that, purpose product is substrate
On be covered with the film mutually sticked by multi-layer nano particle；Wherein, the film thickness of film is 200nm-2 μm, the grain of nano particle
Diameter is 30-120nm, is each other≤gap or gap of 10nm.It is this that film group is mutually sticked by multi-layer nano particle
The purpose product dressed up, not only due to the surface plasmon resonance property that noble metal micro-nano structure has itself, but also because of gold nano
A large amount of gap or gap between particle and become induction SERS hot spot, the activity of SERS is greatly improved, due also to thin
Film is mutually sticked by multi-layer nano particle, and not only more times of ground improve the activity of its SERS, and it is to be measured molten also to have prevented water etc.
The uniformity of its SERS signal of the dissolved destruction of liquid, more because of the partial size of the gold nano grain of specific dimensions and the thickness of film, and
So that it is had stronger light absorption at exciting light 785nm --- using 785nm laser detection pesticide molecule when, can reduce sharp
Damage of the light to pesticide molecule obtains the SERS spectra of molecule itself, and can also reduce the interference of background signal, to make purpose
Product is provided with high SERS activity, is extremely suitable to the trace detection to pesticide molecule.
Second, using purpose product obtained as SERS active-substrate, through being carried out under various concentration to parathion-methyl
The test of multiple more batches, when the concentration of measured object parathion-methyl is down to 3 × 10–6When mol/L, remain to be effectively detected
Out, and the consistency of its detection and repeated multiple spot and any point in purpose product are all very good.
Third, preparation method is simple, scientific, efficient.It is active higher that structurally reasonable, SERS is not only made, and not by water
Etc. the purpose product that solution to be measured destroys its SERS signal uniformity --- the film of gold nano grain assembling；It also makes it have suitable
In the characteristic for carrying out trace detection to parathion-methyl, more have the characteristics that easy to operate quick；And then make purpose product easily
In widely commercial applications in the quick trace detection to pesticide methyl parathion.
Detailed description of the invention
Fig. 1 is one of the result for using scanning electron microscope (SEM) to be characterized purpose product made from preparation method.Its
In, a figure in Fig. 1 is the SEM image of purpose product, and b figure is the high magnification SEM image of purpose product shown in a schemes；Fig. 1 is shown
The numerous gold nano grains for constituting purpose product out are layered laminate, and there is a large amount of gap or gaps between particle.
Fig. 2 is to be characterized to the purpose product for being attached with various concentration parathion-methyl using laser Raman spectrometer
One of as a result.Curve I in Fig. 2 is containing 10–4The Raman light spectral line of the purpose product of mol/L parathion-methyl, curve II are containing 2
×10–5The Raman light spectral line of the purpose product of mol/L parathion-methyl, curve III are containing 3 × 10–6Mol/L parathion-methyl
The Raman light spectral line of purpose product.
Specific embodiment
Preferred embodiment of the invention is described in further detail with reference to the accompanying drawing.
It buys from market or is voluntarily made first:
As the silicon chip substrate of conductive substrates, indium oxide tin glass substrate and the tin dioxide conductive glass lined for adulterating fluorine
Bottom；
Ethyl alcohol；
Deionized water.
Then:
Embodiment 1
The specific steps of preparation are as follows:
After first cleaning conductive substrates using ethyl alcohol and deionized water, in the golden film of the surface of conductive substrates sputtering 10nm thickness；
Wherein, conductive substrates are indium oxide tin glass substrate, obtain the conductive substrates that its surface is covered with golden film.Again using graphite flake as sun
The conductive substrates that pole, its surface are covered with golden film are that cathode is placed in Gold electrolysis liquid, in 20 μ A/cm2Constant current under electro-deposition
It is dry at 40 DEG C after being used for deionized water cleaning 1 time after 120min；Wherein, Gold electrolysis liquid is the gold chloride of 0.2g/L
The mixed liquor of aqueous solution and the aqueous povidone solution of 200g/L, polyvinylpyrrolidone therein are that its molecular weight is
The film for being similar to gold nano grain assembling shown in FIG. 1 is made in 40000 polyvinylpyrrolidone.
Embodiment 2
The specific steps of preparation are as follows:
After first cleaning conductive substrates using ethyl alcohol and deionized water, in the golden film of the surface of conductive substrates sputtering 15nm thickness；
Wherein, conductive substrates are indium oxide tin glass substrate, obtain the conductive substrates that its surface is covered with golden film.Again using graphite flake as sun
The conductive substrates that pole, its surface are covered with golden film are that cathode is placed in Gold electrolysis liquid, in 140 μ A/cm2Constant current under electro-deposition
It is dry at 45 DEG C after being used for deionized water cleaning 2 times after 95min；Wherein, Gold electrolysis liquid is the gold chloride of 2.5g/L
The mixed liquor of aqueous solution and the aqueous povidone solution of 150g/L, polyvinylpyrrolidone therein are that its molecular weight is
The film for being similar to gold nano grain assembling shown in FIG. 1 is made in 40000 polyvinylpyrrolidone.
Embodiment 3
The specific steps of preparation are as follows:
After first cleaning conductive substrates using ethyl alcohol and deionized water, in the golden film of the surface of conductive substrates sputtering 20nm thickness；
Wherein, conductive substrates are indium oxide tin glass substrate, obtain the conductive substrates that its surface is covered with golden film.Again using graphite flake as sun
The conductive substrates that pole, its surface are covered with golden film are that cathode is placed in Gold electrolysis liquid, in 260 μ A/cm2Constant current under electro-deposition
It is dry at 50 DEG C after being used for deionized water cleaning 2 times after 70min；Wherein, Gold electrolysis liquid is the gold chloride water of 5g/L
The mixed liquor of the aqueous povidone solution of solution and 100g/L, polyvinylpyrrolidone therein are that its molecular weight is
The film of gold nano grain assembling as shown in Figure 1 is made in 40000 polyvinylpyrrolidone.
Embodiment 4
The specific steps of preparation are as follows:
After first cleaning conductive substrates using ethyl alcohol and deionized water, in the golden film of the surface of conductive substrates sputtering 25nm thickness；
Wherein, conductive substrates are indium oxide tin glass substrate, obtain the conductive substrates that its surface is covered with golden film.Again using graphite flake as sun
The conductive substrates that pole, its surface are covered with golden film are that cathode is placed in Gold electrolysis liquid, in 380 μ A/cm2Constant current under electro-deposition
It is dry at 55 DEG C after being used for deionized water cleaning 3 times after 45min；Wherein, Gold electrolysis liquid is the gold chloride of 7.5g/L
The mixed liquor of aqueous solution and the aqueous povidone solution of 50g/L, polyvinylpyrrolidone therein are that its molecular weight is
The film for being similar to gold nano grain assembling shown in FIG. 1 is made in 40000 polyvinylpyrrolidone.
Embodiment 5
The specific steps of preparation are as follows:
After first cleaning conductive substrates using ethyl alcohol and deionized water, in the golden film of the surface of conductive substrates sputtering 30nm thickness；
Wherein, conductive substrates are indium oxide tin glass substrate, obtain the conductive substrates that its surface is covered with golden film.Again using graphite flake as sun
The conductive substrates that pole, its surface are covered with golden film are that cathode is placed in Gold electrolysis liquid, in 500 μ A/cm2Constant current under electro-deposition
It is dry at 60 DEG C after being used for deionized water cleaning 3 times after 20min；Wherein, Gold electrolysis liquid is the gold chloride water of 10g/L
The mixed liquor of the aqueous povidone solution of solution and 2g/L, polyvinylpyrrolidone therein are that its molecular weight is
The film for being similar to gold nano grain assembling shown in FIG. 1 is made in 40000 polyvinylpyrrolidone.
The silicon chip substrate as conductive substrates is selected respectively again or adulterates the tin dioxide conductive glass substrate of fluorine, in repetition
Embodiment 1-5 is stated, the film of gold nano grain assembling shown in FIG. 1 has equally been made as or has been similar to.
The purposes of the film of gold nano grain assembling are as follows:
Using the film of gold nano grain assembling as the active substrate of Surface enhanced Raman scattering, the wavelength of exciting light is used
For the content for the parathion-methyl that the laser Raman spectrometer measurement of 785nm is adhered to thereon, result as shown in Figure 2 is obtained；Its
In, the power of the exciting light of laser Raman spectrometer is 0.1-2mW, time of integration 1-20s.
Obviously, those skilled in the art can to film and preparation method thereof that gold nano grain of the invention assembles and
Purposes carries out various modification and variations without departing from the spirit and scope of the present invention.If in this way, to these modifications of the invention
Within the scope of the claims of the present invention and its equivalent technology with modification, then the present invention is also intended to encompass these changes and becomes
Including type.
Claims (9)
1. a kind of film of gold nano grain assembling, including the film being made of gold nano grain being covered on substrate, feature
It is:
The substrate is conductive substrates；
The film being made of gold nano grain is that multilayer gold nano grain mutually sticks film forming, the multilayer gold nano grain
The film thickness for mutually sticking the film of film forming is 200nm-2 μm；
The partial size of the gold nano grain is 30-120nm, is each other≤gap or gap of 10nm.
2. the film of gold nano grain assembling according to claim 1, it is characterized in that conductive substrates are silicon chip substrate or oxygen
Change indium tin glass substrate, or the tin dioxide conductive glass substrate of doping fluorine.
3. a kind of preparation method of the film of the assembling of gold nano grain described in claim 1, including sputtering method, it is characterised in that main
Want that steps are as follows:
Prior to the golden film of the surface sputtering 10-30nm thickness of conductive substrates, the conductive substrates that its surface is covered with golden film are obtained, then by stone
Ink sheet is that cathode is placed in Gold electrolysis liquid as the conductive substrates that anode, its surface are covered with golden film, in 20-500 μ A/cm2Perseverance
The film of gold nano grain assembling is made in electro-deposition 20-120min under constant current.
4. the preparation method of the film of gold nano grain assembling according to claim 3, it is characterized in that conductive substrates
Surface sputtering golden film before, be first used for ethyl alcohol and deionized water cleaning.
5. the preparation method of the film of gold nano grain assembling according to claim 3, it is characterized in that Jenner obtained
It is dry at 40-60 DEG C after the film of rice grain assembling is cleaned 1-3 times using deionized water.
6. the preparation method of the film of gold nano grain assembling according to claim 3, it is characterized in that conductive substrates are silicon
Piece substrate or indium oxide tin glass substrate, or the tin dioxide conductive glass substrate of doping fluorine.
7. the preparation method of the film of gold nano grain assembling according to claim 3, it is characterized in that Gold electrolysis liquid is
The mixed liquor of the aqueous povidone solution of the aqueous solution of chloraurate and 2-200g/L of 0.2-10g/L.
8. the preparation method of the film of gold nano grain assembling according to claim 7, it is characterized in that polyvinylpyrrolidine
Ketone is the polyvinylpyrrolidone that its molecular weight is 40000.
9. a kind of purposes of the film of the assembling of gold nano grain described in claim 1, it is characterised in that:
Using the film of gold nano grain assembling as the active substrate of Surface enhanced Raman scattering, it is using the wavelength of exciting light
The content for the parathion-methyl that the laser Raman spectrometer measurement of 785nm is adhered to thereon.
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| CN108982632A (en) * | 2018-07-26 | 2018-12-11 | 大连大学 | A kind of flexible electrode and preparation method thereof based on flower-like nanometer gold structure |
| CN109722683B (en) * | 2019-01-04 | 2020-09-25 | 中国科学院合肥物质科学研究院 | Gold nanostructure with conical surface and preparation method and application thereof |
| CN110579461A (en) * | 2019-05-15 | 2019-12-17 | 上海交通大学 | Preparation method and application of SERS performance detection biosensor |
| CN110487831B (en) * | 2019-07-30 | 2022-01-07 | 西南交通大学 | Preparation method of speckles and method and equipment for preparing gold nanoparticle coating speckles |
| CN111518874A (en) * | 2020-06-10 | 2020-08-11 | 青岛科技大学 | Raman enhanced substrate, preparation method thereof and method for detecting miRNA (micro ribonucleic acid) |
| CN113668029B (en) * | 2021-08-27 | 2023-03-10 | 安徽大学 | Film formed by rough gold nanoparticles and preparation method and application thereof |
| CN114672858B (en) * | 2022-04-27 | 2023-09-19 | 安徽大学 | Nano gold film for enhancing Raman scattering activity and preparation method thereof |
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|---|---|---|---|---|
| CN102944545A (en) * | 2012-12-05 | 2013-02-27 | 江西师范大学 | Nano-gold surface-enhanced Raman active substrate with layered three-dimensional structure and method for preparing same |
| CN105174194A (en) * | 2015-08-06 | 2015-12-23 | 中国科学院合肥物质科学研究院 | Gold micro-nano structure array and preparation method as well as application thereof |
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