CN106951608A - Using Computer Simulation by the method for the material temperature of ion beam bombardment - Google Patents
Using Computer Simulation by the method for the material temperature of ion beam bombardment Download PDFInfo
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Abstract
The invention discloses a kind of utilization Computer Simulation by the method for the material temperature of ion beam bombardment, to overcome artificial experiment measurement by the defect of bombardment material temperature inconvenience.The present invention utilizes computer simulation technique, pass through thermodynamics simulation analysis, analog simulation goes out the curve changed over time by the temperature of ion beam bombardment material, only needs to when actually used change by the parameter of bombardment material, just can obtain certain by the temperature curve of bombardment material.The present invention changes the mode conventionally by experiment measurement ion beam bombardment material temperature, technical staff is freed from cumbersome actual thermometric experiment, avoid again and again preparation, the record analysis of test data and the processing of later stage data of actual thermometric experiment, greatly improve the operating efficiency that scientific research personnel studies various material properties using ion beam, it is possible to cause deleterious situation to provide the space prevented in advance to be risen by bombardment material temperature more conveniently.
Description
Technical field
The present invention relates to a kind of method for calculating ion beam bombardment material temperature, belong to Ion beam application technical field.
Background technology
Ion beam is under vacuum, after the ionization room of ion gun is to inert gas ionization, by acceleration, boundling etc.
Step, is obtained with certain speed and with the ion stream of certain beam energy, with the most use is argon ion.Ion beam typically should
In terms of following four：1. ion etching；2. ion beam sputter depositing plated film；3. ion beam sputtering assisted deposition；4. ion
Injection.
During bombardment of the ion beam to material surface, its part momentum transfer is caused on by bombardment material surface
Material surface temperature rises, because the technique is to carry out in a vacuum, so being highly detrimental to radiating (without heat loss through convection, heat
Conduction is also very limited, and radiating is mainly carried out in the way of radiation), this may be to causing to change by the property of bombardment material surface
Become.Therefore, the fuel factor that ion beam bombardment is caused is studied, to carrying for being caused harm by the rising of bombardment material surface temperature
Preceding prevention just seems extremely important.
At present, in the prior art for by the measurement of bombardment material surface temperature, general measurement means are all between experiment
Connect the temperature produced by after measurement ion beam bombardment certain material, and actual thermometric experiment needs to expend longer experiment and prepared
The record analysis of test data and the processing of later stage data are also required to consume a longer time in time, and process of the test,
To causing many troubles, wasting manpower and material resources by the temperature survey of bombardment material in practice.
The content of the invention
In order to solve the above problems, overcome artificial experiment measurement by the inconvenience of bombardment material temperature, the invention provides one
Plant using Computer Simulation by the method for the material temperature of ion beam bombardment, the principle of the invention is to utilize Computer Simulation skill
Art, by thermodynamics simulation analysis, analog simulation goes out the curve changed over time by the temperature of ion beam bombardment material, in reality
Only need to change by the parameter of bombardment material when using, certain is just can obtain by the temperature curve of bombardment material, without every
It is secondary all to do actual thermometric experiment.
The concrete technical scheme that the present invention is used is as follows：
Step one：Calculate ion beam energy density fonction
1st, using ion beam to carrying out etching of fixed place and time by bombardment material, with after bombardment, distinguishing before ion beam bombardment
Using laser interferometer measurement by the face type data of bombardment material surface, the face after bombardment is subtracted using the face type data before bombardment
Type data obtain etch amount, then divided by the etching spent time (i.e. bombardment time), so as to obtain by the unit of bombardment material
Time etch rate (hereinafter referred to as material removal working function)；
Material removes working function=(bombarding above type data-bombardment type data below)/bombardment time；
2nd, material is removed into working function (class Gaussian Profile) and is converted to ion beam energy density fonction, the ion beam
Energy density distribution function can be called directly by next step ANSYS thermodynamics simulation analysis.
Calculate ion beam energy density fonction specific method be：
1. the material volume removed in the unit interval=material removes working function × (1.0 × 10-6) × Pixel Dimensions2；
2. in the unit interval bombardment to the amount of ions on material=(ion beam current/1000)/1.602176565 ×
10-19(1.602176565×10-19It is the carried charge of each electronics)；
3. bang within (1 second) in the material volume/unit interval removed in volume=unit interval of an ion remaval material
The amount of ions hit on material；
4. calculate in the unit interval and bombarded in ion beam energy maximum=unit interval to the number of ions on material
The energy (1000~1200 electron-volts) of amount × each ion；ANSYS emulation the inside needs to use ion beam in the unit interval
Energy maximum value parameter, the parameter is used for the maximum for indicating ion beam energy in the unit interval, that is, in ANSYS thermodynamics
Assume that the energy entrained by ion beam does not have any loss to be all converted to heat energy and is delivered to by bombardment material in emulation.
5. ion beam distribution function=[material removal working function × (1.0 × 10 are calculated-6) × Pixel Dimensions2]/
The volume of one ion remaval material；
6. the energy of each ion is 1000~1200 electron-volts, and it is close to calculate ion beam energy according to below equation
Spend distribution function：Ion beam energy density fonction=[energy of ion beam distribution function × each ion ×
(1.602176565×10-19)]/[(Pixel Dimensions/1000) × (Pixel Dimensions/1000)], unit be joule/square metre；
By calculating：Ion beam energy density fonction=88500/exp (({ X }2+{Y}2)/0.081)
Referred both in the above-mentioned unit interval in 1 second.
Step 2：Carry out thermodynamics simulation analysis
Using ANSYS softwares to being modeled by bombardment material, the ion beam energy density point produced by invocation step one
Cloth function carries out thermodynamics simulation analysis, and setting analysis time and selection are by bombardment material model back temperature point, by ANSYS
The selected temperature spot that calculates of software changes over time curve.
The step of ANSYS thermodynamics simulation analysis is specially:
1. the front processor of ANSYS softwares is entered, definition uses heat analysis unit by the cell type of bombardment material model
SOLID90 cell types, it belongs to the solution unit of higher order accuracy.Pyroconductivity, density and the specific heat capacity of definition material this three
Individual parameter, ANSYS thermodynamic analysis is directly closely related with these three parameters of material, and these three parameters lack one just
ANSYS thermodynamics simulation analysis can not be carried out；
2. set up by bombardment material model, it is SOLID90 and division unit grid to specify its cell type；
3. ion beam energy density fonction=88500/exp (({ X that step one is produced are read in using ANSYS softwares
}2+{Y}2)/0.081), X and Y are consequently exerted at the value of ion beam energy density fonction on model node, and then ANSYS can be certainly
It is dynamic to calculate the ion beam energy size for being applied to the point (X, Y).Ion beam energy density fonction, the function is in mathematical table
Up to a upper continuous curve surface function, but in ANSYS thermodynamics simulation processes, because computer model is some node structures
Into ion beam energy density fonction, this continuous curve surface is covered on the model being made up of some nodes, computer meeting
(X, the Y) value for being covered in ion beam energy density fonction on model node is automatically found, is covered in so as to calculate automatically
The size of ion beam energy density fonction on the node.Gauss thermal source form is defined, thermal conversion efficiency system is set in advance
Number is variable coefficient of discharge (0~100%), the ion beam energy maximum × 88500 × hot-cast socket of Gauss thermal source=in the unit interval
Efficiency factor/exp (distance**2/0.081), distance=sqrt (a**2+b**2) therein, a and b are steps one
The value of the Pixel Dimensions of intermediate ion beam；
4. apply Gauss thermal source form to by bombardment material model surface, set initial temperature, set and solve option transient state
Analysis, then heating is solved.
Further, Pixel Dimensions refer to remove working function using several square tiles separating materials, and these are square
The size of shape fritter both horizontally and vertically, unit is millimeter, and the parameter belongs to self-defined, and span is gone according to material
Determine except the size of working function, if material removes working function size within 40mm × 40mm, the big I of Pixel Dimensions
With value 1.5mm, that is, using 1.5mm × 1.5mm square tiles come separating materials remove working function.It is general next
Say, Pixel Dimensions size span is 0.5mm, 1mm, 1.5mm, 2mm.Value is according to being, when material removal working function is big
It is small within 20mm × 20mm, Pixel Dimensions can choose 0.5mm；When material remove working function size 30mm × 30mm with
Interior, Pixel Dimensions can choose 1mm；When material removes working function size within 40mm × 40mm, Pixel Dimensions can be selected
Take 1.5mm；When material removes working function size within 50mm × 50mm, Pixel Dimensions can choose 2mm.
Further, it is necessary to set the thermal conversion efficiency of ion beam energy density fonction in thermodynamics simulation analysis
Coefficient, that is, the thermal conversion efficiency coefficient defined in ANSYS are variable coefficient of discharge (scope is 0~100%), and the coefficient is to use
To adjust the difference size between the temperature logs that actual temperature logs and thermodynamics simulation analysis are obtained, the value of the coefficient should
Accomplish that simulated temperature measurement curve and actual temperature logs error are minimum as far as possible.
The reason for defining ion beam thermal conversion efficiency coefficient is that the energy (including heat energy) entrained by ion beam is a part of
It is directly passed to by bombardment material, the kinetic energy of ion is transformed into heat energy transmission by another part by the collision between atom
Be comprehensively a thermal conversion efficiency coefficient both heat transfers to by bombardment material, the effect of the coefficient be indicated for from
How many is converted to heat energy and passed to by bombardment material for energy entrained by beamlet.
Further, before the ANSYS in step 2 4. is solved, setting application Gauss thermal source total time is 30 minutes, typically
Ion beam, which carries out fixed point 15 minutes materials of bombardment to the surface of material, can just reach thermally-stabilised, therefore maximum setting 30 minutes is
Enough.
By using above-mentioned technical proposal, the present invention can realize following technique effect：
The analog simulation method of the present invention changes the mode conventionally by experiment measurement ion beam bombardment material temperature, and
It is that, by thermodynamics simulation analysis, analog simulation goes out by the temperature versus time curve of ion beam bombardment material, for not
Same bombardment material, need to only change three parameters of material can obtain the temperature variation curve of this kind of material.Experiment proves that,
The result that the inventive method is tested with actual thermometric only exists slight error.
Being applicable for the inventive method, can free technical staff from cumbersome actual thermometric experiment, it is to avoid
Preparation, the record analysis of test data and the processing of later stage data of actual thermometric experiment, greatly improve section again and again
Grind the operating efficiency that personnel study various material properties using ion beam.Further, since some materials can face material at high temperature
Expect the change of characteristic, thus the present invention application can with it is more convenient be to be risen to cause deleterious situation to carry by bombardment material temperature
For the space prevented in advance.
Brief description of the drawings
Fig. 1 is the schematic device of actual thermometric experiment in the embodiment of the present invention.
Fig. 2 is that have two actual points for measuring temperature, one in the point for measuring temperature schematic diagram of actual thermometric experiment in the embodiment of the present invention, figure
Individual is the A points for measuring temperature positioned at ion beam center, and another is the B points for measuring temperature of 20 millimeters of distance center.
Fig. 3 is the temperature of two points for measuring temperature A and B of actual thermometric experiment in the embodiment of the present invention with ion gun and filament
Heat radiation time increased temperature profile.
Fig. 4 is ANSYS thermal simulations emulation and actual thermometric experimental result comparison diagram in the embodiment of the present invention, and C represents ANSYS
A points for measuring temperature are simulated, D represents ANSYS simulation B points for measuring temperature.
Mark and represent in figure：1. ion gun body；2. converge ion beam；3. by bombardment material；4. five temp probes.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
The process for obtaining temperature logs using the inventive method is as follows：
Step one：Calculate ion beam energy density fonction
1st, using ion beam to carrying out etching of fixed place and time, etch period 1.5 minutes by bombardment material.In ion beam bombardment
After preceding and bombardment, using laser interferometer measurement by the face type data of bombardment material surface, subtracted using the face type data before bombardment
The face type data gone after bombardment obtain etch amount again divided by the etching spent time is so that when obtaining the unit by bombardment material
Between etch rate (hereinafter referred to as material removal working function)；
Material removes working function=(bombarding above type data-bombardment type data below)/bombardment time；
2nd, material is removed working function (class Gaussian Profile) and is converted to ion beam energy density fonction, the distribution letter
Number can be called directly by next step ANSYS sunykatuib analyses.
Calculate ion beam energy density fonction specific method be：
1. material volume=material that (1 second) removes in the unit interval removes working function × (1.0 × 10-6) × pixel chi
It is very little2；
2. in the unit interval (1 second) bombardment to the amount of ions on material=(ion beam current/1000)/
1.602176565×10-19(1.602176565×10-19It is the carried charge of each electronics)；
3. (1 in material volume/unit interval that (1 second) removes in volume=unit interval of an ion remaval material
Second) bombard to the amount of ions on material；
4. calculate in the unit interval bombardment in (1 second) of (1 second) ion beam energy maximum=in the unit interval and arrive material
On amount of ions × each ion energy (1000~1200 electron-volts)；
5. ion beam distribution function=[material removal working function × (1.0 × 10 are calculated-6) × Pixel Dimensions2]/
The volume of one ion remaval material；
6. the energy of each ion is 1000~1200 electron-volts, and it is close to calculate ion beam energy according to below equation
Spend distribution function：
Ion beam energy density fonction=[energy × (1.602176565 of ion beam distribution function × each ion
×10-19)]/[(Pixel Dimensions/1000) × (Pixel Dimensions/1000)], unit be joule/square metre；
By calculating：Ion beam energy density fonction=88500/exp (({ X }2+{Y}2)/0.081)。
Step 2：Carry out thermodynamics simulation analysis
Using ANSYS softwares to being modeled by bombardment material, the ion beam energy density point produced by invocation step one
Cloth function carries out thermodynamics simulation analysis, and setting analysis time and selection are by bombardment material model back temperature point, by ANSYS
The selected temperature spot that calculates of software changes over time curve.
The step of ANSYS thermodynamics simulation analysis is specially:
1. the front processor of ANSYS softwares is entered, definition uses heat analysis unit by the cell type of bombardment material model
SOLID90 cell types；Pyroconductivity, density and the specific heat capacity parameter of definition material；
2. set up by bombardment material model, it is SOLID90 and division unit grid to specify its cell type；
3. ion beam energy density fonction=88500/exp (({ X that step one is produced are read in using ANSYS softwares
}2+{Y}2)/0.081), X and Y are consequently exerted at the value of ion beam energy density fonction on model node, and then ANSYS can be certainly
It is dynamic to calculate the ion beam energy size for being applied to the point (X, Y).Gauss thermal source form is defined, thermal conversion efficiency system is set in advance
Number is variable coefficient of discharge (0~100%), ion beam energy maximum (the 88500) × hot-cast socket of Gauss thermal source=in the unit interval
Efficiency factor/exp (distance**2/0.081), distance=sqrt (a**2+b**2) therein, a and b are steps one
Intermediate ion beam Pixel Dimensions size；
4. apply Gauss thermal source form to model surface, specify initial temperature (10 degrees Celsius of environment temperature), set and solve
Option transient analysis, then heating is solved.Before ANSYS solutions, setting application Gauss thermal source total time is 30 minutes, typically
Ion beam, which carries out fixed point 15 minutes materials of bombardment to the surface of material, can just reach thermally-stabilised, therefore maximum setting 30 minutes is
Enough.
In order to verify the inventive method, carry out below by the actual thermometric experiment of the back temperature of ion beam bombardment material：
Subjects：Diameter 100mm, thickness 5mm quartz glass disk.
Temperature measuring device：WZP-PT100 temperature sensors, U.S.'s control MEACON digital readout temperature controllers.
Process of the test：Fixed point bombardment is carried out to quartz glass disk using the focused ion beam of 20~30 milliamperes of line, Hong
Hitting a little has two, and A points for measuring temperature are located at disk back side center, B points for measuring temperature distance center point 20mm, target distance 12CM, ion gun
Running parameter is shown in Table 1.
The ion gun running parameter table of table 1
Step one：As shown in Figure 1 and Figure 2, one piece of thickness about 5mm quartz glass plate is prepared.The one side of sheet material draws one directly
(depending on size of the size of this circle according to ion beam spot area coverage, this experiment intermediate ion beam spot diameter, is about for footpath about 40mm circle
100mm, the size span of the circle is in 0~100mm), using resistant to elevated temperatures gluing firm two temp probes, the circle center is put
A temp probe is put, a temp probe is placed on circle.Because it is symmetrical that circle is presented in the Temperature Distribution produced by ion beam spot
Distribution, thus can also the center of circle one temp probe of each distribution equidistant up and down, therefore the quantity of temp probe can be with
Between two to five.The signal wire of temp probe is divided into vacuum house line and vacuum outside wire, is worn by vacuum connector
Vacuum-chamber wall is crossed to be attached.
Step 2：Start vavuum pump to vacuum chamber, when vacuum reaches 10-3During this rank of Pa, to vacuum chamber
Inert gas (being usually argon gas) is discharged, flow 10SCCM can now start radio-frequency ion source, the radio frequency work(of radio-frequency ion source
Rate is at 100~130 watts, and beam can be in 1000~1200 electron volts, and accelerating potential neutralizes filament electronic stream about at 100~110 volts
100~200 milliamperes, vacuum now is 2.5 × 10-2~3.5 × 10-2Pa, 20~30 milliamperes of ion beam current now.
Step 3：After ion beam is produced, ion gun is moved to and stopped at the 12CM of bombardment sheet material, the center of ion beam
Need just to be pointed to the temp probe at center, now ion gun mouthful distance is by bombardment material surface 12CM.According to different materials
Sheet material, the stabilization time of temp probe measured temperature differs, it is slow the need for more than ten minutes, fast general one or two minute can be steady
It is fixed.The temperature value of two temp probes after record is stable, at interval of 1 minute record once.
Actual thermometric experimental result is as follows：
Fig. 3 is the temperature of A points for measuring temperature and B points for measuring temperature with ion gun and filament heat radiation time increased temperature curve
Figure, initial temperature is all 13 DEG C, and vacuum is 1.9 × 10-3Pa.Need to be beforehand with A points for measuring temperature and B points for measuring temperature with neutralization filament heat
The increased temperature profile of radiated time, because ion beam is needed during the work to neutralize during the electron stream that filament produces comes
With the positive charge of ion beam institute band, otherwise ion beam can because accumulate too many positive charge on nonconducting dielectric material and can not be just
Often work.And a large amount of radiant heat can be produced during work by neutralizing filament, so as to influence whether to emulate in ANSYS thermodynamics
In only there was only ion beam to the fuel factor that is produced by bombardment material, so the experiment of actual thermometric is needed the generation of neutralization filament
Fuel factor forecloses.
ANSYS heat analysis simulated tests, environment temperature is 10 DEG C, and ion beam energy conversion coefficient is 1.5%, is removed simultaneously
The influence of filament heat radiation is neutralized, that is, is subtracted in the same time and to be neutralized the material temperature that filament causes and rise.ANSYS heating power
Learn and do not consider to rise the temperature caused by the material by ion beam bombardment with filament in ion gun in simulation analysis, so
In actual thermometric experiment, environment temperature is 10 DEG C, and the temperature of A points for measuring temperature and B points for measuring temperature in Fig. 4 is all subtracted out neutralization filament and shone
Temperature rise influence caused by penetrating, is shown in Fig. 3.
Above-mentioned actual thermometric experimental result is compared with the simulation result of the inventive method, referring to Fig. 4.C represents ANSYS
A points for measuring temperature are simulated, D represents ANSYS simulation B points for measuring temperature.A and C in Fig. 4 represent the temperature song positioned at ion beam spot central point
Line, temperature error has 10 degrees Celsius of error on the 15th minute, before 12 minutes this two temperature curves coincide it is relatively good.In Fig. 4
B and D curves represent the temperature profile gone out positioned at ion beam spot central point 20mm, it is relatively good that the trend of the two is coincide,
But there is 10 degrees Celsius of error, because the modeling of this method Computer is to employ the model simplified.ANSYS heat
The temperature curve that the temperature curve and experimental record temp probe that Mechanics Simulation is obtained are obtained can have some errors, but overall
Trend is the same.Because temperature field is more complicated in vacuum environment, the emulation of ANSYS thermodynamics is built upon Utopian temperature
Spend on the basis of field, therefore there are some errors.General error is within 10 degree Celsius ranges, and this is for by the material of ion beam bombardment
Material can reach for 200 degrees Celsius that error 5% is acceptable.
The invention is not restricted to above-described embodiment, all are belonged to using the technical scheme of equivalent or equivalence replacement formation
The scope of protection of present invention.
Claims (4)
1. a kind of utilization Computer Simulation is by the method for the material temperature of ion beam bombardment, it is characterised in that including as follows
Step：
Step one：Calculate ion beam energy density fonction
(1) use ion beam by bombardment material to carrying out etching of fixed place and time, with after bombardment, distinguishing before the ion beam bombardment
The face type data by bombardment material surface are measured, the face type data subtracted using the face type data before bombardment after bombardment are obtained
Etch amount, then divided by the etching spent time, working function is removed by the material of bombardment material so as to obtain；
(2) material removal working function is converted into ion beam energy density fonction：
1. the material volume removed in the unit interval=material removes working function × (1.0 × 10-6) × Pixel Dimensions2；
2. bombarded in the unit interval to the amount of ions on material=(ion beam current/1000)/1.602176565 × 10-19；
3. bombarded in the material volume/unit interval removed in volume=unit interval of an ion remaval material onto material
Amount of ions；
4. calculate in the unit interval in ion beam energy maximum=unit interval bombardment to the amount of ions on material ×
The energy of each ion；
5. ion beam distribution function=[material removal working function × (1.0 × 10 are calculated-6) × Pixel Dimensions2]/mono-
The volume of ion remaval material；
6. ion beam energy density fonction=[energy of ion beam distribution function × each ion × (1.602176565 ×
10-19)]/[(Pixel Dimensions/1000) × (Pixel Dimensions/1000)]=88500/exp (({ X }2+{Y}2)/0.081)；
Step 2：Carry out thermodynamics simulation analysis
(1) pyroconductivity of definition material, density and specific heat capacity；
(2) set up by bombardment material model；
(3) the ion beam energy density fonction that step one is produced is read in
=88500/exp (({ X }2+{Y}2)/0.081), X and Y are consequently exerted at ion beam energy Density Distribution letter on model node
Several values, obtains the ion beam energy size of the point (X, Y)；Gauss thermal source form is defined, setting thermal conversion efficiency coefficient to be can
Variation coefficient, the ion beam energy maximum × 88500 × thermal conversion efficiency coefficient/exp of Gauss thermal source=in the unit interval
(distance**2/0.081), distance=sqrt (a**2+b**2) therein, a and b are the pictures of step one intermediate ion beam
The value of plain size；
(4) apply Gauss thermal source form to by bombardment material model surface, set initial temperature, set and solve option transient state point
Analysis, then heating is solved.
2. according to the method described in claim 1, it is characterized in that, the Pixel Dimensions remove working function according to the material
Size is set：
If material removes working function size within 20mm × 20mm, Pixel Dimensions value is 0.5mm；
If material removes working function size within 30mm × 30mm, Pixel Dimensions value is 1mm；
If material removes working function size within 40mm × 40mm, Pixel Dimensions value is 1.5mm；
If material removes working function size within 50mm × 50mm, Pixel Dimensions value is 2mm.
3. method according to claim 1 or 2, it is characterized in that, the scope of thermal conversion efficiency coefficient described in step 2 (3)
0~100%, and the value of the thermal conversion efficiency coefficient should make thermodynamics simulation analysis temperature logs bent with actual thermometric
Line error is minimum.
4. method according to claim 1 or 2, it is characterized in that, before the solution of step 2 (4), setting applies Gauss
Thermal source total time is 30 minutes.
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| CN105200518A (en) * | 2015-10-14 | 2015-12-30 | 西北工业大学 | Method for preparing lead selenide polycrystalline film on basis of oxygen ion beam assisted deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109670223A (en) * | 2018-12-07 | 2019-04-23 | 山西太钢不锈钢股份有限公司 | A kind of method of grinding roller of vertical mill precision positioning |
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