CN106935666A - A kind of novel photovoltaic material and preparation method and purposes - Google Patents
A kind of novel photovoltaic material and preparation method and purposes Download PDFInfo
- Publication number
- CN106935666A CN106935666A CN201710263720.0A CN201710263720A CN106935666A CN 106935666 A CN106935666 A CN 106935666A CN 201710263720 A CN201710263720 A CN 201710263720A CN 106935666 A CN106935666 A CN 106935666A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic material
- novel photovoltaic
- preparation
- antireflective coating
- ammonium carbonate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000001099 ammonium carbonate Substances 0.000 claims abstract description 27
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 235000012501 ammonium carbonate Nutrition 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 27
- 238000001354 calcination Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- 238000002310 reflectometry Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 11
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 6
- PRKQVKDSMLBJBJ-UHFFFAOYSA-N ammonium carbonate Chemical class N.N.OC(O)=O PRKQVKDSMLBJBJ-UHFFFAOYSA-N 0.000 description 5
- 235000011162 ammonium carbonates Nutrition 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229960004424 carbon dioxide Drugs 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Paints Or Removers (AREA)
Abstract
The invention belongs to photovoltaic material preparation field, more particularly to a kind of novel photovoltaic material and its production and use.From tetraethyl orthosilicate and ammonium carbonate, both are sufficiently mixed under normal temperature, add F127 templates, heating response, washs and be vacuum dried after cooling under an inert atmosphere, to its microwave treatment and calcines, novel photovoltaic material is obtained.Preparation process is simple of the invention, material are cheap and easy to get, and the high transmission rate of novel photovoltaic material determines that it can widely be applied in area of solar cell.
Description
Technical field
The invention belongs to photovoltaic material preparation field, more particularly to a kind of novel photovoltaic material and preparation method thereof and use
On the way.
Background technology
As thin film solar cell technologies constantly develop, efficient thin-film solar cell research obtained it is huge into
Just.All back-contact electrodes (IBC) battery structure of Sunpower companies of U.S. exploitation, the battery back of the body is all designed into by its gate-shaped electrode
Face, both positive and negative polarity cross arrangement, up to 23%, laboratory peak efficiency reaches 24.2% to volume production efficiency.However, Sunpower's is complete
The step of preparation process of back electrode cell structure is very various, and PANASONIC it is also proposed the battery that HIT and IBC is combined, cost
Height certainly will will also turn into the bottleneck that scale of mass production is promoted.Additionally, this kind of preceding surface matte of battery still uses conventional structure, therefore
There is very big room for promotion on preceding surface to the absorption aspect of light.
The preceding surface outermost layer of thin-film solar cells is antireflective coating, the structure touched first as sunshine, and its is anti-
The height for penetrating rate and transmissivity directly determines the photoelectric transformation efficiency of whole solar cell.Current solar battery antireflective film
It is the structure influence using silicon nitride as material, silicon nitride anti-reflecting film compact structure, although light reflectivity is not high, but densification
Light transmittance, causes its light transmittance low.And ultraviolet is high in sunshine medium wave length energy, improve material UV transparent rate into
It is vital one side.The demand increasingly urgent to clean energy resource to meet people, it is necessary to develop a kind of new
Photovoltaic material solves such problem.
The content of the invention
The purpose of the present invention：For the low problem of current silicon nitride anti-reflecting film light transmittance, there is provided a kind of novel photovoltaic material
Material and preparation method thereof, the film is used to substitute traditional silicon nitride anti-reflecting film, and the saturating of solar cell is significantly increased
Light rate.
Technical scheme：A kind of novel photovoltaic material is provided, the preparation method of the material is, from positive silicic acid
, be sufficiently mixed for both under normal temperature by ethyl ester and ammonium carbonate, F127 templates is added, under an inert atmosphere heating response, after cooling
Wash and be vacuum dried, to its microwave treatment and calcine, novel photovoltaic material is obtained.There is provided this novel photovoltaic material simultaneously
Preparation method, concrete operation step includes：
(1) tetraethyl orthosilicate and ammonium carbonate are selected, both is thoroughly mixed uniformly under normal temperature, 1 hour is stood, is obtained
Tetraethyl orthosilicate and ammonium carbonate mixture；
(2) to F127 templates are added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, new mixing is obtained
Compound, new mixture is transferred in tube furnace, is reacted 12~20 hours under the conditions of inert atmosphere, 70~90 DEG C, cooling
After wash, under 80 DEG C of vacuum environments dry 1~2 hour, last microwave treatment, be obtained presoma；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 400~500 DEG C, calcining removes template, system
Obtain novel photovoltaic material.
Preferably, tetraethyl orthosilicate, ammonium carbonate and F127 templates mol ratio are 1~3 in step (1)：1：0.3~
0.8。
Preferably, inert atmosphere is the one kind in nitrogen, helium, argon gas in step (2).
Preferably, the hydro-thermal reaction time is 14~15 hours in step (2).
Obtained novel photovoltaic material of the invention is used to prepare the antireflective coating of thin-film solar cells.
Technique effect of the invention：In the course of reaction of step of the present invention (2), ammonium carbonate heat resolve is into ammonia and two
Carbonoxide, ammonia has reproducibility, and by the high price Si reduction in tetraethyl orthosilicate, carbon dioxide prevents reduction during the course of the reaction
Silicon stack afterwards builds the structure to form densification, and ammonium carbonate has decisive work in material forms special Micro porosity configuration process
With while formation of the template to pore space structure has guiding function.Ultraviolet in the size and sunshine of material is in together
An order of magnitude, ultraviolet can occur diffraction on material, and the light transmittance of material has been significantly increased, and the material is found in practice
The light reflectivity of material is not reduced correspondingly, has been lifted on the contrary.Preparation process is simple of the invention, material are cheap and easy to get,
The high transmission rate of novel photovoltaic material determines that it can widely be applied in area of solar cell.
Brief description of the drawings
Fig. 1 be embodiment 1 prepare novel photovoltaic material TEM figure, the wavelength of ultraviolet between 10nm to 400nm,
Fig. 1 illustrates that the present invention has successfully prepared the material of pore space structure size and ultraviolet wavelength in the same order of magnitude.
Specific embodiment
Embodiment 1
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates and 2mol ammonium carbonates are selected, both are thoroughly mixed in beaker under normal temperature
It is even, 1 hour is stood, tetraethyl orthosilicate and ammonium carbonate mixture is obtained；
(2) to the F127 templates that 0.5mol is added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, obtain
To new mixture, new mixture is transferred in tube furnace, in N2Atmosphere, react 16 hours under the conditions of 80 DEG C, after cooling
Washing, dries 1 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 450 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(1) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
(2) the conventional Si of 2g is coated in FTO glass surfaces3N4Material, then with sol evenning machine with 6000r/min rotating speeds to it
Spin coating 2 minutes, is added drop-wise to the chlorobenzene of 2mL on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of bars
It is heated 15 minutes under part, Si is obtained3N4Antireflective coating.
Using U.S. Lamda 900PE ultraviolet-visible spectrophotometers test novel photovoltaic material antireflective coating and
Si3N4The transmissivity and reflectivity of antireflective coating：Novel photovoltaic material antireflective coating reflectivity is 5%, and transmissivity is 92%；
Si3N4Antireflective coating reflectivity is 7%, and transmissivity is 80%.
Embodiment 2
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates and 1mol ammonium carbonates are selected, both are thoroughly mixed in beaker under normal temperature
It is even, 1 hour is stood, tetraethyl orthosilicate and ammonium carbonate mixture is obtained；
(2) to the F127 templates that 0.3mol is added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, obtain
To new mixture, new mixture is transferred in tube furnace, in N2Atmosphere, react 16 hours under the conditions of 80 DEG C, after cooling
Washing, dries 1 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 450 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(1) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
(2) the conventional Si of 2g is coated in FTO glass surfaces3N4Material, then with sol evenning machine with 6000r/min rotating speeds to it
Spin coating 2 minutes, is added drop-wise to the chlorobenzene of 2mL on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of bars
It is heated 15 minutes under part, Si is obtained3N4Antireflective coating.
Using U.S. Lamda 900PE ultraviolet-visible spectrophotometers test novel photovoltaic material antireflective coating and
Si3N4The transmissivity and reflectivity of antireflective coating：Novel photovoltaic material antireflective coating reflectivity is 4%, and transmissivity is 92%；
Si3N4Antireflective coating reflectivity is 8%, and transmissivity is 82%.
Embodiment 3
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates and 3mol ammonium carbonates are selected, both are thoroughly mixed in beaker under normal temperature
It is even, 1 hour is stood, tetraethyl orthosilicate and ammonium carbonate mixture is obtained；
(2) to the F127 templates that 0.8mol is added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, obtain
To new mixture, new mixture is transferred in tube furnace, in N2Atmosphere, react 16 hours under the conditions of 80 DEG C, after cooling
Washing, dries 1 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 450 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(1) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
(2) the conventional Si of 2g is coated in FTO glass surfaces3N4Material, then with sol evenning machine with 6000r/min rotating speeds to it
Spin coating 2 minutes, is added drop-wise to the chlorobenzene of 2mL on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of bars
It is heated 15 minutes under part, Si is obtained3N4Antireflective coating.
Using U.S. Lamda 900PE ultraviolet-visible spectrophotometers test novel photovoltaic material antireflective coating and
Si3N4The transmissivity and reflectivity of antireflective coating：Novel photovoltaic material antireflective coating reflectivity is 6%, and transmissivity is 90%；
Si3N4Antireflective coating reflectivity is 8%, and transmissivity is 79%.
Embodiment 4
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates and 2mol ammonium carbonates are selected, both are thoroughly mixed in beaker under normal temperature
It is even, 1 hour is stood, tetraethyl orthosilicate and ammonium carbonate mixture is obtained；
(2) to the F127 templates that 0.5mol is added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, obtain
To new mixture, new mixture is transferred in tube furnace, in N2Atmosphere, react 12 hours under the conditions of 70 DEG C, after cooling
Washing, dries 1 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 400 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(1) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
(2) the conventional Si of 2g is coated in FTO glass surfaces3N4Material, then with sol evenning machine with 6000r/min rotating speeds to it
Spin coating 2 minutes, is added drop-wise to the chlorobenzene of 2mL on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of bars
It is heated 15 minutes under part, Si is obtained3N4Antireflective coating.
Using U.S. Lamda 900PE ultraviolet-visible spectrophotometers test novel photovoltaic material antireflective coating and
Si3N4The transmissivity and reflectivity of antireflective coating：Novel photovoltaic material antireflective coating reflectivity is 7%, and transmissivity is 88%；
Si3N4Antireflective coating reflectivity is 8%, and transmissivity is 81%.
Embodiment 5
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates and 2mol ammonium carbonates are selected, both are thoroughly mixed in beaker under normal temperature
It is even, 1 hour is stood, tetraethyl orthosilicate and ammonium carbonate mixture is obtained；
(2) to the F127 templates that 0.5mol is added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, obtain
To new mixture, new mixture is transferred in tube furnace, in N2Atmosphere, react 20 hours under the conditions of 90 DEG C, after cooling
Washing, dries 1 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 500 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(1) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
(2) the conventional Si of 2g is coated in FTO glass surfaces3N4Material, then with sol evenning machine with 6000r/min rotating speeds to it
Spin coating 2 minutes, is added drop-wise to the chlorobenzene of 2mL on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of bars
It is heated 15 minutes under part, Si is obtained3N4Antireflective coating.
Using U.S. Lamda 900PE ultraviolet-visible spectrophotometers test novel photovoltaic material antireflective coating and
Si3N4The transmissivity and reflectivity of antireflective coating：Novel photovoltaic material antireflective coating reflectivity is 8%, and transmissivity is 89%；
Si3N4Antireflective coating reflectivity is 7%, and transmissivity is 81%.
Comparative example 1
Prepare novel photovoltaic material：
(1) 1mol tetraethyl orthosilicates are selected, to the F127 templates that 0.5mol is added in tetraethyl orthosilicate, is mixed
Thing, mixture is transferred in tube furnace, in N2Atmosphere, react 16 hours under the conditions of 80 DEG C, washed after cooling, in 80 DEG C of vacuum
Dried 1 hour under environment, last microwave treatment, presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 450 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
Prepare novel photovoltaic material antireflective coating and Si3N4Antireflective coating：
(3) 2g novel photovoltaic materials are coated in FTO glass surfaces, then it is revolved with 6000r/min rotating speeds with sol evenning machine
Apply 2 minutes, the chlorobenzene of 2mL is added drop-wise on the macropore antireflection film material thin layer for rotating after 1 minute, in 150 DEG C of conditions
Under it is heated 15 minutes, novel photovoltaic material antireflective coating is obtained；
The saturating of novel photovoltaic material antireflective coating is tested using U.S. Lamda 900PE ultraviolet-visible spectrophotometers
Penetrate rate and reflectivity：Novel photovoltaic material antireflective coating reflectivity is 25%, and transmissivity is 69%.
Claims (6)
1. a kind of novel photovoltaic material, it is characterised in that the preparation method of the nano material is：From tetraethyl orthosilicate and carbon
, be sufficiently mixed for both under normal temperature by sour ammonium, adds F127 templates, under an inert atmosphere heating response, and washing is simultaneously true after cooling
Sky is dried, and to its microwave treatment and is calcined, and novel photovoltaic material is obtained.
2. a kind of preparation method of novel photovoltaic material as claimed in claim 1, it is characterised in that described preparation method bag
Include：
(1) tetraethyl orthosilicate and ammonium carbonate are selected, both is thoroughly mixed uniformly under normal temperature, 1 hour is stood, positive silicon is obtained
Acetoacetic ester and ammonium carbonate mixture；
(2) to F127 templates are added in tetraethyl orthosilicate obtained in step (1) and ammonium carbonate mixture, new mixing is obtained
Thing, new mixture is transferred in tube furnace, is reacted 12~20 hours under the conditions of inert atmosphere, 70~90 DEG C, after cooling
Washing, dries 1~2 hour, last microwave treatment under 80 DEG C of vacuum environments, and presoma is obtained；
(3) presoma obtained in step (2) is calcined 2 hours under the conditions of 400~500 DEG C, calcining removes template, is obtained new
Type photovoltaic material.
3. the preparation method of novel photovoltaic material as claimed in claim 2, it is characterised in that tetraethyl orthosilicate in step (1),
Ammonium carbonate and F127 templates mol ratio are 1~3：1：0.3~0.8.
4. the preparation method of novel photovoltaic material as claimed in claim 2, it is characterised in that inert atmosphere is in step (2)
One kind in nitrogen, helium, argon gas.
5. the preparation method of novel photovoltaic material as claimed in claim 2, it is characterised in that in step (2) during hydro-thermal reaction
Between be 14~15 hours.
6. a kind of purposes of novel photovoltaic material as claimed in claim 1, it is characterised in that the photovoltaic material is used to prepare
The antireflective coating of thin-film solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710263720.0A CN106935666B (en) | 2017-04-21 | 2017-04-21 | A kind of photovoltaic material and preparation method and purposes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710263720.0A CN106935666B (en) | 2017-04-21 | 2017-04-21 | A kind of photovoltaic material and preparation method and purposes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106935666A true CN106935666A (en) | 2017-07-07 |
| CN106935666B CN106935666B (en) | 2019-05-03 |
Family
ID=59438322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710263720.0A Active CN106935666B (en) | 2017-04-21 | 2017-04-21 | A kind of photovoltaic material and preparation method and purposes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106935666B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103277A (en) * | 2018-07-27 | 2018-12-28 | 五邑大学 | A kind of UV photodetector and preparation method thereof based on ZnO nano grid |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1226684A (en) * | 1998-02-20 | 1999-08-25 | 中国科学院山西煤炭化学研究所 | Preparation of membrane for preventing injury from laser beam |
| JP2004289034A (en) * | 2003-03-25 | 2004-10-14 | Canon Inc | Treatment method for zinc oxide film and method for manufacturing photovoltaic element using same |
| CN101995589A (en) * | 2009-08-14 | 2011-03-30 | 比亚迪股份有限公司 | Method for preparing silica antireflective film |
| CN102153290A (en) * | 2010-12-03 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | Method for preparing porosity-adjustable nano porous antireflection film by doping organic template |
| CN102584024A (en) * | 2012-01-19 | 2012-07-18 | 蚌埠玻璃工业设计研究院 | Preparation method of efficient increased-transmission and antireflection glass |
-
2017
- 2017-04-21 CN CN201710263720.0A patent/CN106935666B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1226684A (en) * | 1998-02-20 | 1999-08-25 | 中国科学院山西煤炭化学研究所 | Preparation of membrane for preventing injury from laser beam |
| JP2004289034A (en) * | 2003-03-25 | 2004-10-14 | Canon Inc | Treatment method for zinc oxide film and method for manufacturing photovoltaic element using same |
| CN101995589A (en) * | 2009-08-14 | 2011-03-30 | 比亚迪股份有限公司 | Method for preparing silica antireflective film |
| CN102153290A (en) * | 2010-12-03 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | Method for preparing porosity-adjustable nano porous antireflection film by doping organic template |
| CN102584024A (en) * | 2012-01-19 | 2012-07-18 | 蚌埠玻璃工业设计研究院 | Preparation method of efficient increased-transmission and antireflection glass |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103277A (en) * | 2018-07-27 | 2018-12-28 | 五邑大学 | A kind of UV photodetector and preparation method thereof based on ZnO nano grid |
| CN109103277B (en) * | 2018-07-27 | 2020-06-12 | 五邑大学 | Ultraviolet photoelectric detector based on ZnO nano grid and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106935666B (en) | 2019-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108906111B (en) | Self-assembly carbon nitride copolymerized photocatalytic composite material and preparation method and application thereof | |
| CN105126796B (en) | A kind of preparation method of Fluorin doped sheet black titanium dioxide nano material | |
| CN101752093B (en) | Preparation method for photonic crystal structure film electrode of dye solar cell | |
| CN103170358B (en) | Porous g-C3N4 photocatalyst and preparation method thereof | |
| CN105047826B (en) | A kind of perovskite solar cell that cadmium sulfide is mixed in calcium titanium ore bed and preparation method thereof | |
| CN102779864A (en) | Cadmium telluride thin-film battery and manufacturing method thereof | |
| CN103434215B (en) | Super-hydrophilic anti-reflection coated glass and preparation method thereof | |
| CN105957966A (en) | REO (rare earth oxide) down-conversion material perovskite solar cell and preparation method | |
| CN106972104A (en) | A kind of perovskite solar cell preparation method of alkali metal fluoride doping | |
| CN101777430B (en) | Preparation method for titanium dioxide membrane used as dye-sensitized solar cell photo-anode | |
| CN108597887A (en) | A method of preparing hollow ball-shape titania/graphene composite material | |
| CN107130256A (en) | Boron doping carbonitride modified titanic oxide complex light electrode and preparation method thereof, application | |
| CN111573632A (en) | Strip-shaped PbSe/ZnSe heterojunction nano material and preparation method and application thereof | |
| CN109638164B (en) | SnO for water treatment 2 Thin film and preparation method of perovskite solar cell thereof | |
| CN107799316A (en) | A kind of PbS quantum is sensitized TiO2The preparation method and applications of film | |
| CN104701416A (en) | Method for preparing black silicon by use of silicon dioxide photoresist mask | |
| CN106935666A (en) | A kind of novel photovoltaic material and preparation method and purposes | |
| CN103866314B (en) | The preparation method and application of visible light-responded black titanium dioxide nano thin-film | |
| CN111564325B (en) | Composite titanium dioxide mesoporous film electrode material and preparation method thereof | |
| CN102013329B (en) | Method for improving optical energy conversion rate of dye sensitized solar cell | |
| JP2002314108A (en) | Solar cell | |
| CN107342364A (en) | A kind of UV photodetector of zinc oxide polyaniline sandwich structure and preparation method thereof | |
| CN105489381A (en) | Light scattering layer of dye-sensitized solar cell and preparation method of light scattering layer | |
| CN105895376A (en) | Yttrium oxide composite ordered titanium dioxide photo-anode and preparation and application | |
| CN106449099B (en) | A kind of preparation method and photo-anode film based on ZnO nano powder photo-anode film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |