CN106927813A - A kind of low-loss temperature-stabilized microwave dielectric ceramic - Google Patents
A kind of low-loss temperature-stabilized microwave dielectric ceramic Download PDFInfo
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- CN106927813A CN106927813A CN201710185718.6A CN201710185718A CN106927813A CN 106927813 A CN106927813 A CN 106927813A CN 201710185718 A CN201710185718 A CN 201710185718A CN 106927813 A CN106927813 A CN 106927813A
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Abstract
The invention discloses a kind of high quality factor temperature-stable ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemical composition of the microwave dielectric ceramic is：Bi5Al2GaO12.The preparation method step of the microwave dielectric ceramic is：(1) it is Bi more than 99.9% (percentage by weight) by purity2O3、Al2O3And Ga2O3Starting powder press Bi5Al2GaO12Composition weigh dispensing；(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is absolute ethyl alcohol, after drying in 1050 DEG C of air atmospheres pre-burning 6 hours；(3) after adding binding agent and granulation in powder obtained in step (2), re-compacted shaping is finally sintered 4 hours in 1100~1150 DEG C of air atmospheres；Described binding agent use mass concentration for 5% poly-vinyl alcohol solution, the addition of polyvinyl alcohol accounts for the 3% of powder gross mass.Ceramic post sintering prepared by the present invention is good, and dielectric constant reaches 11.4~12.1, and its quality factor q f values are up to 108000 142000GHz, and temperature coefficient of resonance frequency is small, industrially there is great application value.
Description
Technical field
The present invention relates to dielectric ceramic material, more particularly to for manufacturing ceramic substrate, the resonance that microwave frequency is used
Dielectric ceramic material of microwave device such as device and wave filter and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied in microwave frequency band (mainly UHF and SHF frequency ranges) circuit as dielectric material
And one or more ceramics of function is completed, resonator, wave filter, dielectric substrate and medium are widely used as in modern communication
The components such as wave circuit, are the key foundation materials of modern communication technology, in portable mobile phone, automobile telephone, nothing
The aspects such as rope phone, television satellite recipient and military radar have highly important application, in the small-sized of modern communication instrument
Change, it is integrated during just playing increasing effect.
The dielectric ceramic of microwave frequency band is applied to, the requirement of following dielectric property should be met：(1) seriation permittivity εr
To adapt to the requirement of different frequency and different application occasion；(2) quality factor q value high or low dielectric loss tan δ are reducing
Noise, typically requires Qf >=3000GHz；(3) the temperature coefficient τ of resonant frequencyfIt is as small as possible ensureing the heat that device has had
Stability, typically requires -10ppm/ DEG C≤τf≤+10ppm/℃.Just had tried to electricity from late 1930s in the world
Dielectric material is applied to microwave technology, and prepares TiO2Microwave dielectric filter, but its temperature coefficient of resonance frequency τfIt is too big and
Cannot be practical.Since the seventies in last century, the large-scale development to medium ceramic material is started, according to relative Jie
Electric constant εrSize and the difference using frequency range, can will generally have been developed that and the microwave-medium ceramics developed are divided into 4
Class.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al2O3-TiO2、Y2BaCuO5、MgAl2O4With
Mg2SiO4Deng its εr≤ 20, quality factor q × f >=50000GHz, τf≤10ppm/℃.It is mainly used in microwave base plate and height
End microwave device.
(2) low εrWith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta2O5,BaO-ZnO-Ta2O5Or BaO-
MgO-Nb2O5,BaO-ZnO-Nb2O5System or the hybrid system MWDC materials between them.Its εr=20~35, Q=(1~2)
×104(under f >=10GHz), τf≈0.It is mainly used in humorous as medium in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz
Shake device.
(3) medium εrWith the microwave dielectric ceramic of Q values, mainly with BaTi4O9、Ba2Ti9O20(Zr, Sn) TiO4Etc. for
The MWDC materials of base, its εr=35~45, Q=(6~9) × 103(under f=3~-4GHz), τf≤5ppm/℃.It is main to use
As dielectric resonator device in the microwave military radar and communication system in 4~8GHz frequency ranges.
(4) ε highrAnd the relatively low microwave dielectric ceramic of Q values, it is mainly used in civilian movement in 0.8~4GHz frequency ranges and leads to
News system, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, Kolar, Kato et al. have found and have studied in succession
Perovskite-like tungsten bronze type BaO-Ln2O3—TiO2Serial (Ln=La, Sm, Nd or Pr etc., abbreviation BLT systems), composite perofskite
Structure C aO-Li2O—Ln2O3—TiO2Series, lead base series material, Ca1-xLn2x/3TiO3It is contour εrMicrowave dielectric ceramic,
Wherein BaO-the Nd of BLT systems2O3—TiO2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO3Dielectric constant reaches
To 105.
Due to three performance indications (ε of microwave dielectric ceramicrWith Qf and τf) between be the relation of mutual restriction (see text
Offer：Restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang Xiaohong, Lv Wenzhong, electronic component with
Material, phase March the 3rd in 2005), the single-phase microwave-medium ceramics for meeting three performance requirements are considerably less, and mainly theirs is humorous
Vibration frequency temperature coefficient generally excessive or quality factor it is relatively low and cannot application request.At present to microwave-medium ceramics
Research major part is the summary of experience drawn by many experiments, and microstructure and dielectric are but illustrated without complete theory
The relation of performance, therefore, cannot also be predicted from the composition of compound and structure in theory its temperature coefficient of resonance frequency and
The microwave dielectric properties such as quality factor, explore and (- 10ppm/ DEG C≤τ of near-zero resonance frequency temperature coefficient of exploitationf≤+10ppm/
DEG C) with the serial differing dielectric constant microwave dielectric ceramic of higher figure of merit be those skilled in the art thirst for solving always but
All the time the problem for succeeding is difficult to, which greatly limits the development of microwave dielectric ceramic and device.
The content of the invention
There is good thermal stability and low-loss ultralow dielectric micro-wave dielectric it is an object of the invention to provide one kind
Ceramic material and preparation method thereof.
The chemical composition of microwave dielectric ceramic material of the invention is Bi5Al2GaO12。
The preparation method step of this microwave dielectric ceramic material is：
(1) it is Bi more than 99.9% (percentage by weight) by purity2O3、Al2O3And Ga2O3Starting powder press
Bi5Al2GaO12Composition weigh dispensing.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is absolute ethyl alcohol, at 1050 DEG C after drying
Pre-burning 6 hours in air atmosphere.
(3) after binding agent and granulation are added in the powder obtained in step (2), re-compacted shaping, finally 1100~
Sintered 4 hours in 1150 DEG C of air atmospheres；Described binding agent use mass concentration for 5% poly-vinyl alcohol solution, polyethylene
The addition of alcohol accounts for the 3% of powder gross mass.
Advantages of the present invention：Bi5Al2GaO12Ceramics sinter good below 1150 DEG C, and dielectric constant reaches 11.4~
The temperature coefficient τ of 12.1, especially resonant frequencyfSmall, temperature stability is good；Quality factor q f values are up to 108000-
142000GHz, can be widely used for the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet low temperature and be total to
The technology of burning technology and microwave multilayer device needs, and industrially has great application value.
Specific embodiment
Embodiment：
Table 1 shows 3 specific embodiments and its microwave dielectric property for constituting different sintering temperatures of the invention.Its system
As a result Preparation Method shows that all ceramics are garnet structure list as described above, carried out material phase analysis with X-ray diffraction analysis
Phase；The evaluation of microwave dielectric property is carried out with cylindrical dielectric resonator method.
This ceramics can be widely used for the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet shifting
The technology of the system such as dynamic communication and satellite communication needs.
Table 1：
Claims (1)
1. a kind of high quality factor ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemistry of the microwave dielectric ceramic
Constitute and be：Bi5Al2GaO12；
The preparation method step of the microwave dielectric ceramic is：
(1) it is Bi more than 99.9% (percentage by weight) by purity2O3、Al2O3And Ga2O3Starting powder press Bi5Al2GaO12
Composition weigh dispensing；
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, in 1050 DEG C of air gas after drying
Pre-burning 6 hours in atmosphere；
(3) after adding binding agent and granulation in powder obtained in step (2), re-compacted shaping, finally at 1100~1150 DEG C
Sintered 4 hours in air atmosphere；Described binding agent use mass concentration for 5% poly-vinyl alcohol solution, polyvinyl alcohol adds
Dosage accounts for the 3% of powder gross mass.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1524792A (en) * | 2003-02-28 | 2004-09-01 | 新加坡纳米材料科技有限公司 | Method for preparing crystalline state perovskite compounds powder |
| CN104446381A (en) * | 2014-11-09 | 2015-03-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic InAlMg7O10 and preparation method thereof |
| CN106187160A (en) * | 2016-07-19 | 2016-12-07 | 桂林理工大学 | Low-loss temperature-stabilized microwave dielectric ceramic LiGaSn3o8 |
-
2017
- 2017-03-26 CN CN201710185718.6A patent/CN106927813A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1524792A (en) * | 2003-02-28 | 2004-09-01 | 新加坡纳米材料科技有限公司 | Method for preparing crystalline state perovskite compounds powder |
| CN104446381A (en) * | 2014-11-09 | 2015-03-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic InAlMg7O10 and preparation method thereof |
| CN106187160A (en) * | 2016-07-19 | 2016-12-07 | 桂林理工大学 | Low-loss temperature-stabilized microwave dielectric ceramic LiGaSn3o8 |
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Application publication date: 20170707 |