CN106921012A - High selectivity double frequency band-pass filter - Google Patents
High selectivity double frequency band-pass filter Download PDFInfo
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- CN106921012A CN106921012A CN201710162778.6A CN201710162778A CN106921012A CN 106921012 A CN106921012 A CN 106921012A CN 201710162778 A CN201710162778 A CN 201710162778A CN 106921012 A CN106921012 A CN 106921012A
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- microstrip line
- high selectivity
- frequency band
- short circuit
- pass filter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
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- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention provides a kind of high selectivity double frequency band-pass filter, including two first microstrip lines, input, output end and the second microstrip line for being arranged on dielectric-slab upper surface.The two ends of each first microstrip line are respectively arranged with open-circuited load and short circuit load, and two middle parts of the first microstrip line are connected by the second microstrip line；Wherein on first microstrip line, output end is connected on another first microstrip line for input connection；The two ends of the second microstrip line connect and in same horizontal line with input, output end respectively, and the horizontal line is mutually perpendicular to as the first central axis, the second central axis with the first central axis；The end of short circuit load sets short circuit metallic post, and short circuit metallic post is connected with the ground metal layer for being arranged on dielectric-slab lower surface.High selectivity double frequency band-pass filter of the invention has good inhibition to out of band signal, with high selectivity, introduces noise few, it is to avoid radio-frequency front-end is interfered.
Description
Technical field
The present invention relates to frequency microwave communication technical field, more particularly to a kind of high selectivity double frequency band-pass filter.
Background technology
Wave filter can filter out-of-band noise as a kind of critically important device of radio-frequency front-end, improve the spirit of circuit system
Sensitivity.Microstrip filter is a kind of device for separating different frequency microwave signal.Its Main Function is to suppress not needing
Signal, prevent it from by wave filter, only allowing the signal of needs to pass through.In microwave circuit system, the performance pair of wave filter
The performance indications of circuit system have a great impact.Due to the diversity of communications band in Modern Communication System, prior art
The selectivity of bandpass filter is often inadequate, it is impossible to meets the multifarious demand of communications band, have impact on whole communication system
Performance.
The content of the invention
It is an object of the invention to provide a kind of high selectivity double frequency band-pass filter, it is intended to solve existing bandpass filter
Selectivity technical problem not high.
To achieve the above object, the invention provides a kind of high selectivity double frequency band-pass filter, including dielectric-slab, etching
Two first microstrip lines, input, output end and the second microstrip line in dielectric-slab upper surface and it is arranged on dielectric-slab following table
The ground metal layer in face, the high selectivity double frequency band-pass filter is symmetrical above and below and in second on the first central axis
Heart axis is symmetrical, wherein：
The two ends of each first microstrip line are respectively arranged with open-circuited load and short circuit load, two first microstrip lines
Middle part is connected by the second microstrip line；
One end of the input is disposed therein a middle part for the first microstrip line and the other end of the input extends
To an edge long of dielectric-slab；
One end of the output end is disposed therein another middle part of the first microstrip line and the other end of the output end prolongs
Extend another edge long of dielectric-slab；
The two ends of second microstrip line connect and in same horizontal line with input, output end respectively, the level
Line is mutually perpendicular to as the first central axis, the second central axis with the first central axis；
The end of the short circuit load is provided with short circuit metallic post, and the short circuit metallic post is penetrated from the upper surface of dielectric-slab
To the lower surface of dielectric-slab, and it is connected with the ground metal layer for being arranged on dielectric-slab lower surface.
Preferably, the ground metal layer is the deposited copper metal layer being laid on dielectric-slab lower surface.
Preferably, two first microstrip lines are arranged in parallel on the upper surface of dielectric-slab and on the second center
Axis is symmetrical, and the two ends of second microstrip line are vertically connected between two first microstrip lines.
Preferably, one end of the open-circuited load and the quantity of short circuit load are four, each first microstrip line
Two ends are respectively provided with an open-circuited load and a short circuit load.
Preferably, first microstrip line, the second microstrip line, open-circuited load, short circuit load, input, output end are
The metal copper sheet of strip structure.
Preferably, the length of first microstrip line is that 2L1+W=2 × 22.5mm+1.66mm=46.66mm, width are
W1=1.22mm, the length of second microstrip line is L0=9.78mm, width is W0=1.35mm, the input and output
The length at end is L=14.4mm, width and is W=1.66mm.
Preferably, the length of the short circuit load be L2=11mm, width be W2=3mm, the length of the open-circuited load
For L3=11mm, width are W3=1.7mm.
Preferably, the short circuit metallic post is shaped as column.
Preferably, the dielectric-slab is that a kind of thickness of slab is 0.762mm, the pcb board of relative dielectric constant 3.66.
Compared to prior art, high selectivity double frequency band-pass filter of the present invention is loaded with four on two microstrip lines
Individual open-circuited load and four short circuit loads, can be in special frequency band by the length and width for adjusting open-circuited load and short circuit load
Form transmission zero so that the microstrip line of script has filtering performance so that with band logical selectivity higher, can be to band outside
Signal has good inhibition, has high selectivity to passband signal, introduces less noise, it is to avoid radio-frequency front-end is caused to do
Disturb.Relative to existing bandpass filter, four open-circuited loads and four short circuit loads are connected to biography by two first microstrip lines
On system microstrip line, and by changing the length and width of microstrip line, can filter high selectivity double frequency band-pass of the present invention
Ripple device reaches good matching effect in working frequency range.
Brief description of the drawings
Fig. 1 is the surface structure schematic diagram of high selectivity double frequency band-pass filter of the present invention.
Fig. 2 is the lower surface configuration schematic diagram of high selectivity double frequency band-pass filter of the present invention.
Fig. 3 is that high selectivity double frequency band-pass filter of the present invention is illustrated by the S parameter result that electromagnetic simulation software is emulated
Figure.
Specific embodiment
With reference to specific embodiment, the present invention is described in further detail, and following examples are to solution of the invention
Release, the invention is not limited in following examples.
With reference to shown in Fig. 1, Fig. 1 is the surface structure schematic diagram of high selectivity double frequency band-pass filter of the present invention.At this
In embodiment, the high selectivity double frequency band-pass filter includes dielectric-slab 1, etching at two first of the upper surface of dielectric-slab 1
Microstrip line 10, input P1, output end P2 and the second microstrip line 11 and be arranged on dielectric-slab lower surface ground metal layer 14
(referring to Fig. 2).The two ends of each first microstrip line 10 are respectively arranged with open-circuited load 12 and short circuit load 13, two first
The middle part of microstrip line 10 is connected by the second microstrip line 11, and one end of input P1 is disposed therein first microstrip line 10
The other end of middle part and input P1 extends to an edge long of dielectric-slab 1, and one end of output end P2 is disposed therein another
The middle part of the first microstrip line of root 10 and the other end of output end P2 extend to another edge long of pcb board 2.Each short circuit is negative
The end for carrying 13 is provided with short circuit metallic post 130, and the shape of the short circuit metallic post 130 can be column, for example cylinder or
Strip cylindricality.The dielectric-slab 1 is a kind of pcb board, and specific sheet material type is Roger RO4350B, wherein relative dielectric is normal
Number 3.66, thickness of slab is 0.762mm.
The two ends of second microstrip line 11 connect and positioned at same horizontal line ab with input P1, output end P2 respectively
On, the present embodiment is using horizontal line ab as the first central axis ab.High selectivity double frequency band-pass filter of the present invention on
First central axis ab is symmetrical above and below, and symmetrical on the second central axis cd, the first central axis ab and the second center
Axis cd is mutually perpendicular to.Two first microstrip lines 10 are arranged in parallel in the upper surface of dielectric-slab 1 and on the second central shaft
Line cd is symmetrical, and the second microstrip line 11 is mutually connected vertically with two first microstrip lines 10.One end of the open-circuited load 12 and short
One end of road load 13 is arranged on each two ends of the first microstrip line 10 and is interconnected with any angle of intersection.In this implementation
In example, one end of the open-circuited load 12 and one end of short circuit load 13 with mutually orthogonal angle be arranged on each it is first micro-
Two ends with line 10 and be interconnected.
It should be noted that the edge long that this implementation defines dielectric-slab 1 refers to the medium parallel with the second central axis cd
Two edges of plate 1.Interval is separated between two first microstrip lines 10, the spacing distance is equal to the length of the second microstrip line 11.
When one end of open-circuited load 12 and one end of short circuit load 13 are connected to the two ends of the first microstrip line 10 in mutually perpendicular manner,
The distance between open-circuited load 12 and short circuit load 13 are less than the spacing distance between two first microstrip lines 10.Due to two
The two ends of one microstrip line 10 are provided with an open-circuited load 12 and a short circuit load 13, therefore high selectivity of the present invention
Double frequency band-pass filter has four open-circuited loads 12 and four short circuit loads 13.Four open-circuited loads 12 and four short circuit loads
13 cause that high selectivity double frequency band-pass filter of the present invention possesses two stopbands in any working frequency range, so that this
Inventing the high selectivity double frequency band-pass filter has dual frequency characteristics, with band logical selectivity higher.
In the present embodiment, the first microstrip line 10, the second microstrip line 11, open-circuited load 12, short circuit load 13, input
P1, output end P2 are the metal copper sheet of strip structure.High selectivity double frequency band-pass filter of the present invention is relative to existing
Bandpass filter, four open-circuited loads 12 and four short circuit loads 13 are connected to the second microstrip line by two first microstrip lines 12
On 11, and by changing the length and width of microstrip line, high selectivity double frequency band-pass filter of the present invention can be made to exist
Good matching effect is reached in working frequency range.
The present invention realizes double frequency with working band in 2.61GHz to 3.23GHz and in 4.75GHz to 5.02GHz
As a example by characteristic, by be arranged on for specific embodiment the first microstrip line 10 of the upper surface of dielectric-slab 1, the second microstrip line 11,
Open-circuited load 12, short circuit load 13, input P1, the length and width of output end P2.In the present embodiment, the first microstrip line 10
Length be 2L1+W=2 × 22.5mm+1.66mm=46.66mm, the width of the first microstrip line 10 is W1=1.22mm.Second
The length of microstrip line 11 is L0=9.78mm, and the width of the second microstrip line 11 is W0=1.35mm.The input P1 and output
The width that the length of end P2 is L=14.4mm, input P1 and output end P2 is W=1.66mm.The open-circuited load 12
Length be L3=11mm, the width of open-circuited load 12 is W3=1.7mm；The length of short circuit load 13 is L2=11mm, short circuit
The width of load 13 is W2=3mm.It should be noted that generally um grades of the metal copper thickness being arranged on pcb board, therefore
The present invention is not to the first microstrip line 10, the second microstrip line 11, open-circuited load 12, short circuit load 13, input P1, output end P2
Metal copper thickness be any limitation as, have no effect on the characteristic of high selectivity double frequency band-pass filter of the present invention.
With reference to shown in Fig. 2, Fig. 2 is the lower surface configuration schematic diagram of high selectivity double frequency band-pass filter of the present invention.At this
In embodiment, the short circuit metallic post 130 of each end of short circuit load 13 is penetrated to dielectric-slab 1 from the upper surface of dielectric-slab 1
Lower surface, is connected to the ground metal layer 14 of the lower surface of dielectric-slab 1, and ground metal layer 14 is the lower surface of dielectric-slab 1 that is laid in
Deposited copper metal layer.
High selectivity double frequency band-pass filter of the present invention passes through said structure design, by conventional microstrip line
Four open-circuited loads 12 and four short circuit loads 13 are loaded with, by the length and width that adjust open-circuited load 12 and short circuit load 13
Degree can form transmission zero in particular job frequency band so that the microstrip line of script has filtering performance, can be to out of band signal
There is good inhibition, there is high selectivity to passband signal, introduce less noise, it is to avoid radio-frequency front-end is interfered.
With reference to shown in Fig. 3, Fig. 3 is the S that high selectivity double frequency band-pass filter of the present invention is emulated by electromagnetic simulation software
Parametric results schematic diagram.Usually, usually, bandpass filter allows different frequency bands signal to enter system, filters out of band signal
Or noise.From figure 3, it can be seen that in 2.61GHz to 3.23GHz and in 4.75GHz to 5.02GHz, it is of the present invention
High selectivity double frequency band-pass filter reflectance factor (| S11 |) below -10dB, illustrate the high selectivity double frequency band-pass filter
Ripple device can be operated in 2.61GHz to 3.23GHz and in 4.75GHz to 5.02GHz, therefore can realize dual frequency characteristics.
At 2.13GHz, the transmission characteristic (| S21 |) of high selectivity double frequency band-pass filter of the present invention can reach -35.8dB,
At 4.13GHz, | S21 | can reach -50.6dB, and at 5.27GHz, | S21 | can reach -34dB, so Gao Xuan of the present invention
Selecting property double frequency band-pass filter has high selectivity.It follows that high selectivity double frequency band-pass filter of the invention can be right
Out of band signal has good inhibition, has high selectivity to passband signal, introduces less noise, it is to avoid radio-frequency front-end is made
Into interference, therefore the performance of microwave circuit can be greatly improved.
High selectivity double frequency band-pass filter of the present invention is loaded with four Hes of open-circuited load 12 on two microstrip lines
Four short circuit loads 13, biography can be formed by the length and width for adjusting open-circuited load 12 and short circuit load 13 in special frequency band
Defeated zero point so that the microstrip line of script has filtering performance, so that with band logical selectivity higher.High selection of the present invention
Property double frequency band-pass filter relative to existing bandpass filter, four open-circuited loads 12 and four short circuit loads 13 are passed through two
First microstrip line 12 is connected on conventional microstrip line, and by changing the length and width of microstrip line, can make institute of the present invention
State high selectivity double frequency band-pass filter and good matching effect is reached in working frequency range.
The preferred embodiments of the present invention are these are only, the scope of the claims of the invention is not thereby limited, it is every to utilize this hair
Equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (9)
1. two first micro-strips of a kind of high selectivity double frequency band-pass filter, including dielectric-slab, etching in dielectric-slab upper surface
Line, input, output end and the second microstrip line and be arranged on dielectric-slab lower surface ground metal layer, it is characterised in that institute
State high selectivity double frequency band-pass filter symmetrical above and below and symmetrical on the second central axis on the first central axis, its
In：
The two ends of each first microstrip line are respectively arranged with open-circuited load and short circuit load, two middle parts of the first microstrip line
Connected by the second microstrip line；
One end of the input is disposed therein a middle part for the first microstrip line and the other end of the input extends to Jie
One edge long of scutum；
One end of the output end is disposed therein another middle part of the first microstrip line and the other end of the output end is extended to
Another edge long of dielectric-slab；
The two ends of second microstrip line connect and in same horizontal line with input, output end respectively, and the horizontal line is made
It is the first central axis, the second central axis is mutually perpendicular to the first central axis；
The end of the short circuit load is provided with short circuit metallic post, and the short circuit metallic post is penetrated to Jie from the upper surface of dielectric-slab
The lower surface of scutum, and be connected with the ground metal layer for being arranged on dielectric-slab lower surface.
2. high selectivity double frequency band-pass filter according to claim 1, it is characterised in that the ground metal layer is deposited
It is located at the deposited copper metal layer on dielectric-slab lower surface.
3. high selectivity double frequency band-pass filter according to claim 1, it is characterised in that two first microstrip lines
It is arranged in parallel on the upper surface of dielectric-slab and symmetrical on the second central axis, the two ends of second microstrip line
It is vertically connected between two first microstrip lines.
4. high selectivity double frequency band-pass filter according to claim 1, it is characterised in that one end of the open-circuited load
Four are with the quantity of short circuit load, the two ends of each first microstrip line are respectively provided with an open-circuited load and a short circuit
Load.
5. high selectivity double frequency band-pass filter according to claim 1, it is characterised in that first microstrip line,
Two microstrip lines, open-circuited load, short circuit load, input, output end are the metal copper sheet of strip structure.
6. high selectivity double frequency band-pass filter according to claim 5, it is characterised in that the length of first microstrip line
Spend for 2L1+W=2 × 22.5mm+1.66mm=46.66mm, width are W1=1.22mm, the length of second microstrip line is
L0=9.78mm, width are W0=1.35mm, and the length of the input and output end is L=14.4mm, width and is W=
1.66mm。
7. high selectivity double frequency band-pass filter according to claim 6, it is characterised in that the length of the short circuit load
For L2=11mm, width are W2=3mm, the length of the open-circuited load is L3=11mm, width is W3=1.7mm.
8. high selectivity double frequency band-pass filter according to claim 1, it is characterised in that the shape of the short circuit metallic post
Shape is column.
9. the high selectivity double frequency band-pass filter according to any one of claim 1 to 8, it is characterised in that the medium
Plate is that a kind of thickness of slab is 0.762mm, the pcb board of relative dielectric constant 3.66.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710162778.6A CN106921012B (en) | 2017-03-18 | 2017-03-18 | Highly selective double frequency band-pass filter |
| PCT/CN2017/107192 WO2018171179A1 (en) | 2017-03-18 | 2017-10-21 | Dual-band bandpass filter with high selectivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710162778.6A CN106921012B (en) | 2017-03-18 | 2017-03-18 | Highly selective double frequency band-pass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106921012A true CN106921012A (en) | 2017-07-04 |
| CN106921012B CN106921012B (en) | 2019-03-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710162778.6A Expired - Fee Related CN106921012B (en) | 2017-03-18 | 2017-03-18 | Highly selective double frequency band-pass filter |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106921012B (en) |
| WO (1) | WO2018171179A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018171179A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Dual-band bandpass filter with high selectivity |
| WO2018171231A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Dual-band band-pass filter based on open loads and short-circuit loads |
| CN112055914A (en) * | 2018-05-08 | 2020-12-08 | 索尼公司 | Filter circuit and communication apparatus |
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| US20080252400A1 (en) * | 2005-09-29 | 2008-10-16 | Kabushiki Kaisha Toshiba | Filter and radio communication device using the same |
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- 2017-03-18 CN CN201710162778.6A patent/CN106921012B/en not_active Expired - Fee Related
- 2017-10-21 WO PCT/CN2017/107192 patent/WO2018171179A1/en active Application Filing
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| US20080252400A1 (en) * | 2005-09-29 | 2008-10-16 | Kabushiki Kaisha Toshiba | Filter and radio communication device using the same |
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| CN206673067U (en) * | 2017-03-18 | 2017-11-24 | 深圳市景程信息科技有限公司 | Double frequency band-pass filter based on open-circuited load and short circuit load |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018171179A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Dual-band bandpass filter with high selectivity |
| WO2018171231A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Dual-band band-pass filter based on open loads and short-circuit loads |
| CN112055914A (en) * | 2018-05-08 | 2020-12-08 | 索尼公司 | Filter circuit and communication apparatus |
| US11374295B2 (en) | 2018-05-08 | 2022-06-28 | Sony Group Corporation | Filter circuit and communication device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018171179A1 (en) | 2018-09-27 |
| CN106921012B (en) | 2019-03-26 |
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