CN106920879A - A kind of forming method of the natural nano post film of self assembly - Google Patents
A kind of forming method of the natural nano post film of self assembly Download PDFInfo
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- CN106920879A CN106920879A CN201710166293.4A CN201710166293A CN106920879A CN 106920879 A CN106920879 A CN 106920879A CN 201710166293 A CN201710166293 A CN 201710166293A CN 106920879 A CN106920879 A CN 106920879A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000001338 self-assembly Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 18
- 150000001412 amines Chemical class 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 238000009835 boiling Methods 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims description 17
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000005357 flat glass Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 125000003944 tolyl group Chemical group 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims 2
- 239000002061 nanopillar Substances 0.000 abstract description 16
- 238000003860 storage Methods 0.000 abstract description 14
- 238000002360 preparation method Methods 0.000 abstract description 7
- 230000005669 field effect Effects 0.000 abstract description 6
- 150000003384 small molecules Chemical class 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 11
- 239000002086 nanomaterial Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of forming method of the natural nano post film of self assembly, bulky amine material and wide bandgap semiconductor materials are dissolved in low boiling point solvent respectively, are spin-coated on after blending on substrate and annealing prepares natural nano post film；The application can be widely applied to all kinds of polymer, the generation of the nano-pillar film of solvable small molecule electret type, the application is charge storage layer by using nano-pillar film, greatly improved with organic active layer contact area, so that memory capacity and charge stability are greatly improved, there is huge potential application foreground in organic field effect tube memory, and device preparation cost is reduced, is easy to promote, applied.
Description
Technical field
It is thin the invention belongs to plastic electronic science and technology and industrial technical field, more particularly to a kind of natural nano post of self assembly
The forming method of film.
Background technology
Organic nanoparticles are the important components of nano material, and it has the morphosis of stabilization, can pass through
Polymerization methodses and polymerized monomer design synthesis and prepare from molecular level, and its size easy to control and particle is homogeneous
Property, make it in the skin effect with nano material, quantum size effect, while macro quanta tunnel effect, also with it
His specific function, such as temperature, acid-base value, electric field and magnetic field responsiveness.In recent years, organic nano material has photoelectricity due to it
Property and the controllable extensive concern for causing everybody of micro-nano structure, have been applied to multiple fields, such as in organic effect crystal
The devices such as pipe memory, fiber waveguide, laser.Organic nanostructure based on small molecule is expected to construct the small-sized micro-nano device of novelty
Part, and with unique performance, can supplement or match in excellence or beauty CNT and inorganic nanostructures in micro-nano photoelectric device
Using.
The diversity of structure, easily cutting property, the low feature of assembly cost, so that organic can be showed due to organic molecule
Nano material shows many functions that inorganic or metal nano material cannot possess.Such as organic nano material has due to it
Mechanicalness and be used widely in flexible electronic device, achieved storage wearableization.
The present invention provides a kind of forming method of the natural nano post film of self assembly, can be by regulating and controlling two kinds of doped solutions
Solubility, volume ratio and rotating speed during spin coating regulate and control thickness, size and the height of nano-pillar.Described nano-pillar film energy
The contact area with organic active layer is enough effectively improved, so as to improve depositing for the organic field effect tube memory prepared by it
Storage characteristic, and the features such as with big memory window, speed of photoresponse high, high storage density and data stability high.
The content of the invention
The technical problem of solution：The present invention mainly proposes a kind of forming method of the natural nano post film of self assembly,
Solution has that memory capacity is low, charge stability is low, preparation cost is high in the prior art, using skills such as inconvenient and complex process
Art problem.The preparation side that nano-pillar film layer improves stability with enlarged contact areas can be prepared by aqueous solution green processing
Method, the present invention does not increase large test technique, technical difficulty on the basis of existing universal test sign equipment, there is provided Yi Zhongjian
Single method prepares nano-pillar charge storage layer, with extremely strong universality.
Technical scheme：A kind of forming method of the natural nano post film of self assembly, comprises the following steps：
The first step：Bulky amine material and wide bandgap semiconductor materials are dissolved in low boiling point solvent respectively, concentration is 3mg/mL, made
Obtain bulky amine material solution and wide bandgap semiconductor materials solution；
Second step：Bulky amine material solution that to be prepared in the first step and wide bandgap semiconductor materials solution by volume 1:5 are total to
It is mixed, stand；
3rd step：Gate electrode and gate insulation layer are sequentially formed on substrate, the thickness of gate insulation layer is 300 nm, is made substrate,
Substrate is respectively cleaned by ultrasonic 10min with acetone, ethanol and deionized water successively, and supersonic frequency is 100 KHz, then will with high pure nitrogen
Substrate surface liquid is dried up, and drying in 120 DEG C of baking oven is put into afterwards；
4th step：Clean substrate after by drying processes 3 ~ 5 min using UV ozone；
5th step：The solution that the substrate surface spin coating second step that 4th step is handled well is prepared, spin coating rotating speed is 3000 r/
Min, spin-coating time 30s, thickness control in atmosphere, the good substrate of spin coating are placed in 80 DEG C of baking oven and are dried in 5 ~ 50 nm
Anneal 30 min, and natural nano post film is obtained；
6th step：The pattern of natural nano post film is observed by atomic force microscope, natural nano column diameter height exists
10-20 nm。
As a preferred technical solution of the present invention：The substrate is selected from heavy doping silicon chip, sheet glass or plastics PET,
Gate electrode is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum, and gate insulation layer is selected from silica, aluminum oxide, zirconium oxide, polyphenyl
Ethene PS or polyvinylpyrrolidone PVP.
As a preferred technical solution of the present invention：Low boiling point solvent is toluene in the first step.
As a preferred technical solution of the present invention：Spin coating process in 5th step is to carry out in atmosphere, empty
Air humidity degree is 40-50%.
As a preferred technical solution of the present invention：The bulky amine material uses ternary toroidal molecule, and broad-band gap is partly led
Body material uses trimethylolpropane.
Beneficial effect：A kind of forming method of the natural nano post film of self assembly of the present invention uses above technical side
Case compared with prior art, with following technique effect：1st, the present invention provides a kind of shape of the natural nano post film of self assembly
Into method, can be on the premise of being tested using AFM general at present, it is not necessary to increase extra analysis test
System, can preferably test out the pattern of nano-pillar film, there is preferable effect of visualization；What the 2nd, the present invention was provided is this from group
The forming method of the natural nano post film of dress, process complexity can be not being increased and in letter using simple spin coating proceeding
On the premise of prepared by single equipment, the contact area between increase charge storage layer and organic active layer is deposited to design with height
A kind of feasible thinking of offer is promoted in the commercialization for storing up the organic transistor memory of density；3rd, the composite can be widely applied to each
Birds of the same feather flock together compound, the generation of the nano-pillar film of solvable small molecule electret type；4th, the present invention is electricity by using nano-pillar film
Lotus accumulation layer, greatly improves with organic active layer contact area so that memory capacity and charge stability obtain very big carrying
Rise, there is huge potential application foreground in organic field effect tube memory, and reduce device preparation cost, just
In popularization, application；5th, the thickness of nano-pillar, size and height adjustable, so as to improve the organic field effect tube prepared by it
The storage characteristics of memory, and with spies such as big memory window, speed of photoresponse high, high storage density and data stability high
Point；6th, large test technique, technical difficulty are not increased on the basis of existing universal test sign equipment, there is provided a kind of simple
Method prepares nano-pillar charge storage layer, with extremely strong universality, is easy to promote, applies；7th, suggestion addition experimental data is made
Be beneficial effect, auditor's later stage examine in more can intuitively understand the technique effect of the application.
Brief description of the drawings：
The nano-pillar membrane structure schematic diagram that Fig. 1 is used by present example；
Fig. 2 is the AFM photos of the organic charge accumulation layer with nanometer rod structure in embodiment 1.
Specific embodiment
Specific embodiment of the invention is described in further detail with reference to Figure of description：
Embodiment 1
As depicted in figs. 1 and 2, the first step：By ternary toroidal molecule WG3It is dissolved in without extra except the organic solvent toluene of water process
In, concentration is 3mg/mL, it is uniformly dispersed, and trimethylolpropane TMP is dissolved in and removes the organic of water process without extra
In solvent toluene, solution concentration is 3 mg/ml, stands 24 h, it is uniformly dispersed；
Second step：The WG that will be configured in the first step3Solution and trimethylolpropane TMP solution by volume 1:5 blendings, rock
Stood after even, it is uniformly dispersed；
3rd step：Highly doped silicon layer and silicon dioxide layer are sequentially formed on heavy doping silicon chip, the thickness of silicon dioxide layer is 300
Nm, is made substrate, and substrate is respectively cleaned by ultrasonic 10min with acetone, ethanol, deionized water successively, and supersonic frequency is 100 KHz, then
Substrate surface liquid is dried up with high pure nitrogen ensure that substrate surface is clean, drying in 120 DEG C of baking oven is put into afterwards；
4th step：Clean substrate after by drying processes 3 ~ 5 min using UV ozone；
5th step：In air humidity is 40-50% air, the substrate surface spin coating second step that the 4th step is handled well is configured
Solution, spin coating rotating speed is the slow-speed of revolution 3000 r/min, spin-coating time 30s, thickness control in 50 nm, in atmosphere, by spin coating
Good substrate is placed on the min of drying and annealing 30 in 80 DEG C of baking oven, and natural nano post film is obtained, and AFM photos are as shown in Figure 2；
6th step：The pattern of natural nano post film is observed by atomic force microscope, natural nano column diameter height exists
10-20 nm, are presented the geometry of rule, and surface is smooth, even thickness crystal structure.
All test results show, a kind of forming method of the natural nano post film of self assembly involved in the present invention,
Preparation process is simple to operate, with low cost, and main processes are completed in the solution, energy saving, and can be given birth on a large scale
Product is applied in organic effect memory.
The present invention provides a kind of forming method of the natural nano post film of self assembly, can use original general at present
On the premise of sub- force microscope is tested, it is not necessary to increase extra analysis of test system, can preferably test out nano-pillar film
Pattern, have preferable effect of visualization；The forming method of the natural nano post film of this self assembly that the present invention is provided, adopts
Can not increased process complexity and on the premise of the preparation of simple equipment, increase electric charge and deposit with simple spin coating proceeding
Contact area between reservoir and organic active layer, is the commercialization of organic transistor memory of the design with high storage density
Promote and a kind of feasible thinking is provided；The composite can be widely applied to all kinds of polymer, the nanometer of solvable small molecule electret type
The generation of post film；The present invention is charge storage layer by using nano-pillar film, is carried significantly with organic active layer contact area
It is high so that memory capacity and charge stability are greatly improved, and have huge in organic field effect tube memory
Big potential application foreground, and device preparation cost is reduced, it is easy to promote, applies；The thickness of nano-pillar, size and height
It is adjustable, so that improve the storage characteristics of the organic field effect tube memory prepared by it, and with big memory window, bloom
The features such as response speed, high storage density and data stability high；Do not increase on the basis of existing universal test sign equipment
Large test technique, technical difficulty, there is provided a kind of simple method prepares nano-pillar charge storage layer, with extremely strong pervasive
Property, it is easy to promote, applies；Suggestion addition experimental data as beneficial effect, auditor's later stage examine in more can intuitively understand
The technique effect of the application.
Embodiments of the present invention are explained in detail above in conjunction with accompanying drawing, but the present invention is not limited to above-mentioned implementation
Mode, in the ken that those of ordinary skill in the art possess, can also be on the premise of present inventive concept not be departed from
Make a variety of changes.
Claims (5)
1. the forming method of the natural nano post film of a kind of self assembly, it is characterised in that comprise the following steps：
The first step：Bulky amine material and wide bandgap semiconductor materials are dissolved in low boiling point solvent respectively, concentration is 3mg/mL, made
Obtain bulky amine material solution and wide bandgap semiconductor materials solution；
Second step：Bulky amine material solution that to be prepared in the first step and wide bandgap semiconductor materials solution by volume 1:5 are total to
It is mixed, stand；
3rd step：Gate electrode and gate insulation layer are sequentially formed on substrate, the thickness of gate insulation layer is 300 nm, is made substrate,
Substrate is respectively cleaned by ultrasonic 10min with acetone, ethanol and deionized water successively, and supersonic frequency is 100 KHz, then will with high pure nitrogen
Substrate surface liquid is dried up, and drying in 120 DEG C of baking oven is put into afterwards；
4th step：Clean substrate after by drying processes 3 ~ 5 min using UV ozone；
5th step：The solution that the substrate surface spin coating second step that 4th step is handled well is prepared, spin coating rotating speed is 3000 r/
Min, spin-coating time 30s, thickness control in atmosphere, the good substrate of spin coating are placed in 80 DEG C of baking oven and are dried in 5 ~ 50 nm
Anneal 30 min, and natural nano post film is obtained；
6th step：The pattern of natural nano post film is observed by atomic force microscope, natural nano column diameter height exists
10-20 nm。
2. the forming method of the natural nano post film of self assembly according to claim 1, it is characterised in that：The substrate
Selected from heavy doping silicon chip, sheet glass or plastics PET, gate electrode is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum, gate insulation layer
Selected from silica, aluminum oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP.
3. the forming method of the natural nano post film of self assembly according to claim 1, it is characterised in that：Described first
Low boiling point solvent is toluene in step.
4. the forming method of the natural nano post film of self assembly according to claim 1, it is characterised in that：Described 5th
Spin coating process in step is to carry out in atmosphere, and air humidity is 40-50%.
5. the forming method of the natural nano post film of self assembly according to claim 1, it is characterised in that：The steric hindrance
Amine material uses ternary toroidal molecule, and wide bandgap semiconductor materials use trimethylolpropane.
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| CN201710166293.4A CN106920879A (en) | 2017-03-20 | 2017-03-20 | A kind of forming method of the natural nano post film of self assembly |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105646529A (en) * | 2016-01-15 | 2016-06-08 | 南京邮电大学 | Fluorenyl windmill grid material and preparation and application method thereof |
| CN106098942A (en) * | 2016-07-29 | 2016-11-09 | 南京邮电大学 | A kind of nano-pillar structure organic field effect tube memorizer and preparation method thereof |
-
2017
- 2017-03-20 CN CN201710166293.4A patent/CN106920879A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105646529A (en) * | 2016-01-15 | 2016-06-08 | 南京邮电大学 | Fluorenyl windmill grid material and preparation and application method thereof |
| CN106098942A (en) * | 2016-07-29 | 2016-11-09 | 南京邮电大学 | A kind of nano-pillar structure organic field effect tube memorizer and preparation method thereof |
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Application publication date: 20170704 |