CN106899216A - A kind of the level submodules of MMC tri- topology and its capacitance voltage balance control method with direct fault current blocking ability - Google Patents
A kind of the level submodules of MMC tri- topology and its capacitance voltage balance control method with direct fault current blocking ability Download PDFInfo
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- CN106899216A CN106899216A CN201710236010.9A CN201710236010A CN106899216A CN 106899216 A CN106899216 A CN 106899216A CN 201710236010 A CN201710236010 A CN 201710236010A CN 106899216 A CN106899216 A CN 106899216A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
Abstract
The present invention provides a kind of level submodules of MMC tri- with direct fault current blocking ability, can quickly remove dc-side short-circuit fault electric current, so as to avoid AC circuit breaker from acting, shortens DC Line Fault checkout time, improves the stability of a system.A kind of MMC combination capacitor type submodules with direct fault current blocking ability of the present invention mainly include:Switching tube 1, switching tube 2, switching tube 3, switching tube 4, switching tube 5, switching tube 6, diode D7, electric capacity C1 and electric capacity C2;The switching tube 1,2,3,4,5,6 is IGBT and anti-paralleled diode.When transverter is in normal operating condition, the submodule can be operated in bypass, parallel connection, series connection Three models, and 0, U is exported respectivelyC、2UCThree kinds of level voltages.Coordinate its capacitance voltage balance control method, each submodule only needs a voltage sensor to be monitored, therefore in the case where same level number voltage conditions are exported, the quantity of voltage sensor reduces half, at the same time, the capacitance voltage quantity that need to be ranked up also reduces half, greatly reduces the computation burden and complexity of hardware cost and control system, improves the stability of system.
Description
Technical field
The present invention relates to MMC transverters field, especially a kind of level of MMC tri- with direct fault current blocking ability
Submodule topology and its capacitance voltage balance control method.
Technical background
With developing rapidly for Power Electronic Technique, the research of multi-level converter and its correlation technique has been increasingly becoming height
Press the study hotspot of high-power electric application field.Modular multilevel converter (Modular Multilevel
Converter, MMC) as a kind of new multi-level converter topological structure, with its unique structural advantage, overcome biography
The deficiency of system multi-level converter, its modular construction is with good expansibility, in D.C. high voltage transmission, reactive-load compensation etc.
There is good application potential to voltage and power grade requirement occasion higher.
Dc-side short-circuit fault is that direct current transportation is particularly a kind of more serious failure mode in overhead transmission line.Mesh
Before, treatment DC side failure mainly has three kinds of modes:1) event is cut off by alternating current equipment such as AC circuit breaker, AC fuse etc.
Barrier point is contacted with AC system;2) contacting for trouble point and transverter is blocked by DC equipment such as dc circuit breaker etc.;3)
The isolation of DC side failure is realized by the switch motion of power semiconductor in transverter.But first way is due to its machine
The limitation of tool action causes the response time of alternating current equipment long and restarts complexity;The technology of the dc circuit breaker in the second way
It is still immature and cost is high, it is difficult to be applied in Practical Project;Compared to first two mode, the third mode response time is fast,
Can quickly be resumed operation after failure, a kind of effective solution route as treatment MMC-HVDC dc-side short-circuit faults.
Can realize that representative in the sub-modular structure of DC Line Fault protection is full-bridge submodule (Full at present
Bridge Sub-Module, FBSM) and clamp Shuangzi module (Clamp Double Sub-Module, CDSM) structure.It is right
In the N level MMC by full-bridge submodule or clamp Shuangzi module-cascade, the electric capacity quantity of its any bridge arm is N-1.It is right
Measured in real time and sorted per the capacitance voltage of each modular unit of bridge arm, to realize the Balance route of capacitance voltage, per bridge arm
Required voltage sensor quantity is also N-1.For the very big MMC of cascade number, it is necessary to substantial amounts of voltage sensor, while increasing
The complexity of control system, reduces the reliability of system.
The content of the invention
The invention provides a kind of level submodules of MMC tri- topology with direct fault current blocking ability and its electric capacity
Voltage balance control method, can quickly block dc-side short-circuit fault electric current, and reduce required voltage sensor quantity, drop
The complexity of low control system, improves the stability of system.
The invention provides a kind of level submodules of MMC tri- topology with direct fault current blocking ability, including open
Close pipe 1, switching tube 2, switching tube 3, switching tube 4, switching tube 5, switching tube 6, diode D7, electric capacity C1 and electric capacity C2;Electric capacity C1
Voltage be UC1, the voltage of electric capacity C2 is UC2;The colelctor electrode of switching tube 1 is connected with the positive pole of electric capacity C1, the transmitting of switching tube 1
Pole is connected with the colelctor electrode of switching tube 6, and the emitter stage of switching tube 2 is connected with the colelctor electrode of the negative pole of electric capacity C1, switching tube 5, opens
The colelctor electrode for closing pipe 2 is connected with the emitter stage of switching tube 3, the emitter stage of switching tube 6, and the colelctor electrode of switching tube 3 is with electric capacity C2's
The negative electrode connection of positive pole, diode D7, the emitter stage of switching tube 4 is connected with the emitter stage of the negative pole of electric capacity C2, switching tube 5, opens
The colelctor electrode for closing pipe 4 is connected with the anode of diode D7.
The described level submodules of MMC tri- topology, switching tube 1 is insulated gate bipolar transistor T1 and anti-paralleled diode
D1, switching tube 2 is insulated gate bipolar transistor T2 and anti-paralleled diode D2, and switching tube 3 is insulated gate bipolar transistor
T3 and anti-paralleled diode D3, switching tube 4 is insulated gate bipolar transistor T4 and anti-paralleled diode TD, and switching tube 5 is exhausted
Edge grid bipolar transistor T5 and anti-paralleled diode D5, switching tube 6 is insulated gate bipolar transistor T6 and the pole of inverse parallel two
Pipe D6.
The described level submodules of MMC tri- topology, the emitter stage of switching tube 1 is switched as the positive pole of submodule output end
The colelctor electrode of pipe 4 as submodule output end negative pole, output voltage is Uout, the reference direction of submodule input current i with it is described
Output voltage UoutReference direction it is identical, UC1=UC2=capacitance voltage rated value Ucref。
The described level submodules of MMC tri- topology, can be operated in bypass, parallel connection, series connection three under normal operating conditions
The pattern of kind, exports three kinds of level voltages (0, UcrefAnd 2Ucref):Zero level is exported under bypass mode;Under paralleling model, two electric capacity
Voltage is identical, output voltage Uout=UC1=UC2=Ucref;Output voltage U under series modelout=UC1+UC2=2Ucref.When event
When barrier occurs, all IGBT of locking, the described level submodules of MMC tri- topology output voltage is 2UcrefOr-Ucref, so as to reach
The purpose of rapid locking fault current.
Capacitance voltage balance control method based on above-mentioned sub-modular structure, comprises the following steps:
Step one:The capacitance voltage of electric capacity C1 in often each submodule of bridge arm is measured, original input voltage sequence is generated
[Vi]1×(N-1)/2=[VC1VC2…VCk…VC(N-1)/2];
Step 2:To submodule capacitor voltage [Vi]1×(N-1)/2It is ranked up from high to low, its corresponding submodule sequence number
Also will rearrangement, formation sequence [NSM1]1×(N-1)/2, and by [NSM1]1×(N-1)/2In each element replicate produce
[NSM2]1×(N-1);
Step 3:For any bridge arms of MMC, the modulator approach such as approach using carrier wave stacking, phase-shifting carrier wave or nearest level
Obtain bridge arm voltage reference valueThe submodule electric capacity number n of input as needed for the subsequent time bridge arm;
Step 4:The submodule electric capacity number n that should be put into according to required by step 3 and bridge arm current direction, generate each son
The capacitance switch status switch [X] of module1×(N-1)=[X1X11X2X22…XkXkk…X(N-1)/2X(N-1)/2(N-1)/2], wherein XkIt is electricity
Hold CkOn off state, X11It is electric capacity CkkOn off state;
Step 5:Submodule capacitance switch status switch [X] according to obtained by step 41×(N-1), acquisition submodule of tabling look-up
Output voltage, generates IGBT trigger pulses.
In the step 4, if bridge arm current Iarm<0, formation sequence [NV]1×(N-1)=[1 1 ... 100 ... 0], its
The number of middle element 1 is equal to the submodule electric capacity number n that should be put into;If bridge arm current Iarm>0, formation sequence [NV]1×(N-1)=
[0 0 ... 011 ... 1], the wherein number of element 1 are equal to the submodule electric capacity number n that should be put into.By sequence [NV]1×(N-1)With
Step 2 sequence [the NSM2]1×(N-1)In corresponding element be multiplied one by one the new ordered series of numbers [N of generationSM3]1×(N-1), and by its odd even
Element sepatation, respectively obtains odd numbered sequences [NSM4]1×(N-1)/2With even order [NSM5]1×(N-1)/2If k is equal to [NSM4]1×(N-1)/2
Middle either element, then Xk=1, otherwise Xk=0;If k is equal to [NSM5]1×(N-1)/2Middle either element, then Xkk=1, otherwise Xkk=0.
Submodule output voltage described in step 5 and the configuration of IGBT trigger pulses are as follows:
If Xk=0, Xkk=0, then submodule output voltage VSM=0, IGBT trigger pulse:T1k=0, T2k=1, T3k=0,
T4k=1, T5k=1, T6k=1;
If Xk=1, Xkk=0 or Xk=0, Xkk=1, then submodule output voltage VSM=Ucref, IGBT trigger pulses:T1k
=1, T2k=0, T3k=1, T4k=1, T5k=1, T6k=1;
If Xk=1, Xkk=1, then submodule output voltage VSM=2Ucref, IGBT trigger pulses:T1k=1, T2k=1, T3k
=1, T4k=1, T5k=0, T6k=0.
Compared with the existing three level submodules for possessing direct fault current blocking ability, advantage of the invention is:It is right
In the N level MMC of the new sub-module cascade, the submodule quantity of its any bridge arm is (N-1)/2, due to each submodule
The voltage of two electric capacity is identical in block, and it is also (N-1)/2 that the voltage sensor quantity needed for per bridge arm is, only traditional submodule institute
Need the 50% of number of sensors, the required capacitance voltage quantity being ranked up also reduces half, greatly reduce hardware into
The computation burden and complexity of sheet and control system, improve the stability of system.
Brief description of the drawings
Fig. 1 is a kind of level submodules of MMC tri- topology with direct fault current blocking ability of the present invention;
Fig. 2 a, 2b, 2c are respectively a kind of level submodules of MMC tri- with direct fault current blocking ability of the present invention and open up
Flutter under limit 1,2,3 three kind of mode of operation;
Fig. 3 is a kind of level submodule topological circuit lockings of MMC tri- with direct fault current blocking ability of the present invention
Two mode of operations afterwards;
Fig. 4 a, 4b, 4c are a kind of level submodules of MMC tri- topology with direct fault current blocking ability of the present invention
Capacitance voltage balance control method flow chart.
Specific embodiment
For present disclosure and feature is expanded on further, specific embodiment of the invention is carried out below in conjunction with accompanying drawing
Illustrate, but implementation not limited to this of the invention.If there is not specified control process below, being those skilled in the art can
Realized with reference to existing control technology.
Reference picture 1, a kind of described level submodule topological structure bags of MMC tri- with direct fault current blocking ability
Include switching tube 1, switching tube 2, switching tube 3, switching tube 4, switching tube 5, switching tube 6, diode D7, electric capacity C1 and electric capacity C2;Electricity
The voltage for holding C1 is UC1, the voltage of electric capacity C2 is UC2;The colelctor electrode of switching tube 1 is connected with the positive pole of electric capacity C1, switching tube 1
Emitter stage is connected with the colelctor electrode of switching tube 6, and the emitter stage of switching tube 2 connects with the colelctor electrode of the negative pole of electric capacity C1, switching tube 5
Connect, the colelctor electrode of switching tube 2 is connected with the emitter stage of the emitter stage of switching tube 3, switching tube 6, the colelctor electrode and electric capacity of switching tube 3
The negative electrode connection of the positive pole, diode D7 of C2, the emitter stage of switching tube 4 connects with the emitter stage of the negative pole of electric capacity C2, switching tube 5
Connect, the colelctor electrode of switching tube 4 is connected with the anode of diode D7.
Switching tube 1 is insulated gate bipolar transistor T1 and anti-paralleled diode D1, and switching tube 2 is brilliant insulated gate bipolar
Body pipe T2 and anti-paralleled diode D2, switching tube 3 is insulated gate bipolar transistor T3 and anti-paralleled diode D3, switching tube 4
It is insulated gate bipolar transistor T4 and anti-paralleled diode TD, switching tube 5 is insulated gate bipolar transistor T5 and inverse parallel
Diode D5, switching tube 6 is insulated gate bipolar transistor T6 and anti-paralleled diode D6.
The emitter stage of switching tube 1 as submodule output end positive pole, the colelctor electrode of switching tube 4 is used as submodule output end
Negative pole, output voltage is Uout, the reference direction of submodule input current i and the output voltage UoutReference direction phase
Together, UC1=UC2=capacitance voltage rated value Ucref。
A kind of reference picture 2, the level submodules of MMC tri- topology with direct fault current blocking ability is normally being transported
There are three kinds of mode of operations during row:
Pattern 1:As shown in Figure 2 a, controlling switch pipe 2,4,5,6 is turned on, and switching tube 1,3 is turned off.The submodule is operated in
Bypass mode, output voltage Uout=0.As the submodule input current i>When 0, current flow paths as shown by the solid line in the drawings,
Electric current i flows through T6, T2, T5 and D4, and electric capacity C1 and electric capacity C2 are bypassed;As the submodule input current i<When 0, current flowing
As shown in phantom in FIG., electric current i flows through T4, D5, D2 and D6 in path, and electric capacity C1 and electric capacity C2 are bypassed.
Pattern 2:As shown in Figure 2 b, controlling switch pipe 1,3,4,5,6 is turned on, and switching tube 2 is turned off.The submodule is operated in
Paralleling model, output voltage Uout=Ucref.As the submodule input current i>When 0, solid line institute in current flow paths such as figure
Show, electric current i flows through D1, T5 and D4, charged to electric capacity C1, flow through T6, D3 and D4, charged to electric capacity C2;When the submodule is defeated
Enter electric current i<When 0, as shown in phantom in FIG., electric current i flows through T4, D5 and T1 to current flow paths, electric capacity C1 electric discharges, flow through T4,
T3 and D6, electric capacity C2 discharge.
Pattern 3:As shown in Figure 2 c, controlling switch pipe 1,2,3,4 is turned on, and switching tube 5,6 is turned off.The submodule is operated in
Series model, output voltage Uout=2Ucref.As the submodule input current i>When 0, solid line in current flow paths such as figure
Shown, electric current i flows through D1, D2, D3 and D4, is charged to electric capacity C1 and electric capacity C2;As the submodule input current i<When 0, electricity
As shown in phantom in FIG., electric current i flows through T4, T3, T2 and T1 to stream circulation path, and electric capacity C1 and electric capacity C2 discharges.
A kind of level submodules of MMC tri- topology with direct fault current blocking ability, when being operated in pattern 2,
Two capacitance voltages are controlled in phase same level, during into subsequent work pattern 3, the initial voltage of two capacitors by being connected in parallel
And current flow paths are identical, therefore capacitance voltage is still consistent, even if there is little deviation in two capacitance voltages, this deviation
Also will be eliminated when paralleling model next time starts, therefore each submodule only needs a voltage sensor to be monitored.
When controller detects direct-current short circuit fault-signal, all IGBT of locking MMC, described one kind has DC Line Fault electricity
The level submodules of MMC tri- topology of flow resistance cutting capacity has two kinds of fault modes.
Fault mode 1:As shown in figure 3 by the solid lines, fault current i>0, electric current flows through D1, D2, D3 and D4, to electric capacity C1 and electricity
Hold C2 to charge, the submodule output voltage Uout=2Ucref。
Fault mode 2:As shown by dotted lines in figure 3, fault current i<0, electric current flows through D7, D5, D2 and D6, is filled to electric capacity C2
Electricity, the submodule output voltage Uout=-Ucref。
It can be seen that, when an error occurs, all IGBT of locking, regardless of bridge arm current direction, all can be to the submodule
Charged, so as to reach the purpose of quick lock fault current.
Reference picture 4a, the capacitance voltage balance control method based on above-mentioned sub-modular structure, comprises the following steps:
Step one:The capacitance voltage of electric capacity C1 in often each submodule of bridge arm is measured, original input voltage sequence is generated
[Vi]1×(N-1)/2=[VC1VC2…VCk…VC(N-1)/2];
Step 2:To submodule capacitor voltage [Vi]1×(N-1)/2It is ranked up from high to low, its corresponding submodule sequence number
Also will rearrangement, formation sequence [NSM1]1×(N-1)/2, and by [NSM1]1×(N-1)/2In each element replicate produce
[NSM2]1×(N-1);
Step 3:For any bridge arms of MMC, the modulator approach such as approach using carrier wave stacking, phase-shifting carrier wave or nearest level
Obtain bridge arm voltage reference valueThe submodule electric capacity number n of input as needed for the subsequent time bridge arm;
Step 4:The submodule electric capacity number n that should be put into according to required by step 3 and bridge arm current direction, generate each son
The capacitance switch status switch [X] of module1×(N-1)=[X1X11X2X22…XkXkk…X(N-1)/2X(N-1)/2(N-1)/2], wherein XkIt is electricity
Hold CkOn off state, X11It is electric capacity CkkOn off state;
Step 5:Submodule capacitance switch status switch [X] according to obtained by step 41×(N-1), acquisition submodule of tabling look-up
Output voltage, generates IGBT trigger pulses.
Such as Fig. 4 b, in the step 4, if bridge arm current Iarm<0, formation sequence [NV]1×(N-1)=[1 1 ... 10
0 ... 0], wherein the number of element 1 is equal to the submodule electric capacity number n that should be put into;If bridge arm current Iarm>0, formation sequence
[NV]1×(N-1)=[0 0 ... 011 ... 1], the wherein number of element 1 are equal to the submodule electric capacity number n that should be put into.By sequence
[NV]1×(N-1)With the step 2 sequence [NSM2]1×(N-1)In corresponding element be multiplied one by one the new ordered series of numbers of generation
[NSM3]1×(N-1), and its odd-even element is separated, respectively obtain odd numbered sequences [NSM4]1×(N-1)/2And even order
[NSM5]1×(N-1)/2If k is equal to [NSM4]1×(N-1)/2Middle either element, then Xk=1, otherwise Xk=0;If k is equal to [NSM5]1×(N-1)/2
Middle either element, then Xkk=1, otherwise Xkk=0.
Such as Fig. 4 c, submodule output voltage described in step 5 and the configuration of IGBT trigger pulses are as follows:
If Xk=0, Xkk=0, then submodule output voltage VSM=0, IGBT trigger pulse:T1k=0, T2k=1, T3k=0,
T4k=1, T5k=1, T6k=1;
If Xk=1, Xkk=0 or Xk=0, Xkk=1, then submodule output voltage VSM=Ucref, IGBT trigger pulses:T1k
=1, T2k=0, T3k=1, T4k=1, T5k=1, T6k=1;
If Xk=1, Xkk=1, then submodule output voltage VSM=2Ucref, IGBT trigger pulses:T1k=1, T2k=1, T3k
=1, T4k=1, T5k=0, T6k=0.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by embodiment limit
System, other any Spirit Essences new without departing from this implementations and the change made under principle, modification, replacement, combine, it is simple
Change, should be equivalent substitute mode, be included in protection scope of the present invention.
Claims (7)
1. a kind of level submodules of MMC tri- with direct fault current blocking ability are topological, it is characterised in that including switching tube
1st, switching tube 2, switching tube 3, switching tube 4, switching tube 5, switching tube 6, diode D7, electric capacity C1 and electric capacity C2;The electricity of electric capacity C1
It is U to pressC1, the voltage of electric capacity C2 is UC2;The colelctor electrode of switching tube 1 is connected with the positive pole of electric capacity C1, the emitter stage of switching tube 1 with
The colelctor electrode connection of switching tube 6, the emitter stage of switching tube 2 is connected with the colelctor electrode of the negative pole of electric capacity C1, switching tube 5, switching tube 2
Colelctor electrode be connected with the emitter stage of switching tube 3, the emitter stage of switching tube 6, the colelctor electrode of switching tube 3 and the positive pole of electric capacity C2,
The negative electrode connection of diode D7, the emitter stage of switching tube 4 is connected with the emitter stage of the negative pole of electric capacity C2, switching tube 5, switching tube 4
Colelctor electrode be connected with the anode of diode D7.
2. a kind of level submodules of MMC tri- with direct fault current blocking ability according to claim 1 are topological, its
It is characterised by:The switching tube 1 is insulated gate bipolar transistor T1 and anti-paralleled diode D1, and switching tube 2 is double insulated gate
Bipolar transistor T2 and anti-paralleled diode D2, switching tube 3 is insulated gate bipolar transistor T3 and anti-paralleled diode D3, is opened
It is insulated gate bipolar transistor T4 and anti-paralleled diode TD to close pipe 4, switching tube 5 be insulated gate bipolar transistor T5 with it is anti-
Parallel diode D5, switching tube 6 is insulated gate bipolar transistor T6 and anti-paralleled diode D6.
3. a kind of level submodules of MMC tri- with direct fault current blocking ability according to claim 1 are topological, its
It is characterised by:The emitter stage of switching tube 1 as the submodule output end positive pole, the colelctor electrode of switching tube 4 is used as the son
The negative pole of module output end, output voltage is Uout, reference direction and the output voltage U of the submodule input current iout
Reference direction it is identical.
4. a kind of level submodules of MMC tri- with direct fault current blocking ability according to claim 1 are topological, its
It is characterised by:UC1=UC2=capacitance voltage rated value Ucref。
5. a kind of capacitance voltage balance control method of the level submodule topological structures of MMC tri- based on as described in right 1~3,
It is characterised in that it includes following steps:
Step one:The capacitance voltage of electric capacity C1 in often each submodule of bridge arm is measured, original input voltage sequence is generated
[Vi]1×(N-1)/2=[VC1VC2…VCk…VC(N-1)/2];
Step 2:To submodule capacitor voltage [Vi]1×(N-1)/2It is ranked up from high to low, its corresponding submodule sequence number also will
Rearrangement, formation sequence [NSM1]1×(N-1)/2, and by [NSM1]1×(N-1)/2In each element replicate produce
[NSM2]1×(N-1);
Step 3:For any bridge arms of MMC, the modulator approach such as approach using carrier wave stacking, phase-shifting carrier wave or nearest level and obtain
Bridge arm voltage reference value The submodule electric capacity number n of input as needed for the subsequent time bridge arm;
Step 4:The submodule electric capacity number n that should be put into according to required by step 3 and bridge arm current direction, generate each submodule
Capacitance switch status switch [X]1×(N-1)=[X1 X11 X2 X22…Xk Xkk…X(N-1)/2X(N-1)/2(N-1)/2], wherein XkIt is electricity
Hold CkOn off state, X11It is electric capacity CkkOn off state;
Step 5:Submodule capacitance switch status switch [X] according to obtained by step 41×(N-1), acquisition submodule output of tabling look-up
Voltage, generates IGBT trigger pulses.
6. capacitance voltage balance control method according to claim 4, it is characterised in that:In the step 4, if bridge
Arm electric current Iarm<0, formation sequence [NV]1×(N-1)=[1 1 ... 100 ... 0], the wherein number of element 1 are equal to the son that should be put into
Module capacitance number n;If bridge arm current Iarm>0, formation sequence [NV]1×(N-1)=[0 0 ... 011 ... 1], wherein element 1
Number is equal to the submodule electric capacity number n that should be put into.By sequence [NV]1×(N-1)With the step 2 sequence [NSM2]1×(N-1)In
Corresponding element is multiplied generates new ordered series of numbers [N one by oneSM3]1×(N-1), and its odd-even element is separated, respectively obtain odd numbered sequences
[NSM4]1×(N-1)/2With even order [NSM5]1×(N-1)/2If k is equal to [NSM4]1×(N-1)/2Middle either element, then Xk=1, otherwise Xk
=0;If k is equal to [NSM5]1×(N-1)/2Middle either element, then Xkk=1, otherwise Xkk=0.
7. capacitance voltage balance control method according to claim 4, it is characterised in that:Submodule output described in step 5
Voltage and the configuration of IGBT trigger pulses are as follows:
If Xk=0, Xkk=0, then submodule output voltage VSM=0, IGBT trigger pulse:T1k=0, T2k=1, T3k=0, T4k=
1, T5k=1, T6k=1;
If Xk=1, Xkk=0 or Xk=0, Xkk=1, then submodule output voltage VSM=Ucref, IGBT trigger pulses:T1k=1,
T2k=0, T3k=1, T4k=1, T5k=1, T6k=1;
If Xk=1, Xkk=1, then submodule output voltage VSM=2Ucref, IGBT trigger pulses:T1k=1, T2k=1, T3k=1,
T4k=1, T5k=0, T6k=0.
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CN108900103A (en) * | 2018-08-23 | 2018-11-27 | 中国能源建设集团广东省电力设计研究院有限公司 | The converter power module and inverter for having DC Line Fault self-cleaning ability |
CN114024458A (en) * | 2021-11-08 | 2022-02-08 | 华北电力大学(保定) | Capacitor voltage balance control method and current converter |
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CN114024458B (en) * | 2021-11-08 | 2023-10-10 | 华北电力大学(保定) | Capacitor voltage balance control method and converter |
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