CN106898655A - Thin film transistor (TFT), array base palte and display panel - Google Patents
Thin film transistor (TFT), array base palte and display panel Download PDFInfo
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- CN106898655A CN106898655A CN201710172101.0A CN201710172101A CN106898655A CN 106898655 A CN106898655 A CN 106898655A CN 201710172101 A CN201710172101 A CN 201710172101A CN 106898655 A CN106898655 A CN 106898655A
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- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 239000012212 insulator Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 100
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 244000154870 Viola adunca Species 0.000 description 24
- 235000005811 Viola adunca Nutrition 0.000 description 24
- 235000013487 Viola odorata Nutrition 0.000 description 24
- 235000002254 Viola papilionacea Nutrition 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- 244000131316 Panax pseudoginseng Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 244000172533 Viola sororia Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Abstract
This application discloses thin film transistor (TFT), array base palte and display panel.One specific embodiment of thin film transistor (TFT) includes：Grid, active layer, source electrode and drain electrode；Wherein, grid is formed at gate metal layer, and active layer is formed at oxide semiconductor layer, and source electrode and drain electrode are formed at Source and drain metal level, and Source and drain metal level is located at side of the oxide semiconductor layer away from gate metal layer, and source electrode and drain electrode are in contact with active layer；Gate insulator is provided between grid and active layer；Gate insulator is λ to any wavelength1Light transmitance be less than to any wavelength be λ2Light transmitance；Wherein 400nm≤λ1≤ 480nm, 480nm ＜ λ2≤780nm.Using the scheme of the application, the stability of thin film transistor (TFT) can be lifted.
Description
Technical field
The application is related to display technology field, and in particular to thin film transistor (TFT), array base palte and display panel.
Background technology
TFT (Thin Film Transistor, thin film transistor (TFT)) LCDs has that brightness is high, low in energy consumption, the life-span
Long the advantages of, it is widely used in display field.TFT generally includes the active layer for providing carrier.Connect in the grid of TFT
When receiving voltage signal, carrier is migrated in the raceway groove of active layer.
A kind of existing TFT uses oxide semiconductor (such as indium gallium zinc oxide) as active layer material, this material
Material has carrier mobility higher.But because oxide semiconductor is more sensitive to the blue violet light of visible light wave range, work as indigo plant
During the active layer for injecting TFT that purple light is provided by backlight, the stability of TFT declines, so as to have impact on display effect.
The content of the invention
In order to solve one or more technical problems that above-mentioned background section is mentioned, this application provides film crystal
Pipe, array base palte and display panel.
On the one hand, this application provides a kind of thin film transistor (TFT), including：Grid, active layer, source electrode and drain electrode；Wherein, grid
Pole is formed at gate metal layer, and active layer is formed at oxide semiconductor layer, and source electrode and drain electrode are formed at Source and drain metal level, source and drain
Metal level is located at side of the oxide semiconductor layer away from gate metal layer, and source electrode and drain electrode are in contact with active layer；Grid
Gate insulator is provided between active layer；Gate insulator is λ to any wavelength1Light transmitance be less than to any wavelength
It is λ2Light transmitance；Wherein 400nm≤λ1≤ 480nm, 480nm ＜ λ2≤780nm。
Second aspect, this application provides a kind of array base palte, including above-mentioned thin film transistor (TFT).
The third aspect, this application provides a kind of display panel, including above-mentioned array base palte.
Thin film transistor (TFT), array base palte and display panel that the application is provided, light of the gate insulator to royal purple optical band
Transmitance less than to the transmitance of its all band visible ray so that be incident to the light of the blue violet light of the active layer of thin film transistor (TFT)
It is strong to decline, so as to improve the stability of thin film transistor (TFT).
Brief description of the drawings
Non-limiting example is described in detail with reference to what the following drawings was made by reading, other features,
Objects and advantages will become more apparent upon：
Fig. 1 is the structural representation of one embodiment of the thin film transistor (TFT) according to the application；
Fig. 2 is the path schematic diagram that light transmits the active layer into thin film transistor (TFT) shown in Fig. 1；
Fig. 3 is the structural representation of another embodiment of the thin film transistor (TFT) according to the application；
Fig. 4 is the path schematic diagram that light transmits the active layer into thin film transistor (TFT) shown in Fig. 3；
Fig. 5 is a kind of transmitance frequency spectrum simulation curve of thin film transistor (TFT) of the embodiment of the present application；
Fig. 6 is the structural representation of one embodiment of the array base palte according to the application；
Fig. 7 is the structural representation of one embodiment of the display panel according to the application.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that, in order to
Be easy to description, be illustrate only in accompanying drawing to about the related part of invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Fig. 1 is refer to, it illustrates the structural representation of one embodiment of the thin film transistor (TFT) according to the application.
As shown in figure 1, thin film transistor (TFT) 100 includes grid 101, active layer 102, source electrode 103 and drain electrode 104.Wherein,
Grid 101 is formed at gate metal layer 11, and active layer 102 is formed at oxide semiconductor layer 12,104 shapes of source electrode 103 and drain electrode
Into in Source and drain metal level 13.Above-mentioned gate metal layer 11 can be formed at the side of substrate 10, and Source and drain metal level 13 is located at oxidation
Away from the side of gate metal layer 11, and source electrode 103 and drain electrode 104 be in contact thing semiconductor layer 12 with active layer 102.
Gate insulator 14 is provided between grid 101 and active layer 102, the gate insulator 14 can be by silicon nitride material
Material, silicon oxide material or the mixture by silicon nitride and Si oxide are formed.Gate insulator 14 is for any wavelength
It is λ1Light transmitance be less than to any wavelength be λ2Light transmitance；Wherein 400nm≤λ1≤ 480nm, 480nm ＜ λ2
≤780nm.400nm to 480nm is the royal purple optical band of visible ray, generally in liquid crystal display panel, the light that backlight sends
Line is incident to the grid direction of thin film transistor (TFT) from substrate 10, and above-mentioned gate insulator 14 is less than to the transmitance of royal purple optical band
To the transmitance of its all band visible ray, then the light of each wave band is by after gate insulator 14, the decay journey of royal purple luminous intensity
Degree is big compared with the attenuation degree of other wave band luminous intensities, and the oxide of thin film transistor active layer is partly led so as to weaken blue violet light
The influence of the stability of body.
In some optional implementations, above-mentioned gate insulator 14 can be higher than to other by royal purple absorptivity
The material of the absorptivity of band of light is formed, or the material by the reflectivity to blue violet light higher than the reflectivity to other band of light
Formed.
Alternatively, the material of above-mentioned gate insulator 14 is silica.
Light is when above-mentioned gate insulator layer surface is incident to, it may occur that reflection and transmission.In other optional realizations
In mode, gate insulator 14 can be designed as follows：The thickness of gate insulator is d, and gate insulator is to wavelength
It is λ1Light refractive index be n10, gate insulator is λ to wavelength2Light refractive index be n20；For arbitrary λ1, λ2, it is full
Foot：
Wherein, [a] represents the positive integer for being not more than a,Or
In the present embodiment, the thickness d and its refractive index n of gate insulator can be selected10And n20, make in its satisfaction
Formula (1), (2), (3), so, be incident to the intensity of each band of light of gate insulator it is identical when, (wavelength is λ to blue violet light1)
Intensity of reflected light (wavelength is λ more than other band of light2) intensity of reflected light, according to law of conservation of energy, blue violet light it is saturating
The transmitted intensity of the intensity less than other band of light of light, i.e. gate insulator is penetrated to be less than to other ripples the transmissivity of blue violet light
The transmissivity of Duan Guang.
Royal purple light transmission in meeting above formula (1), (2), the gate insulator of (3) is explained further below in conjunction with Fig. 2 small
In the principle of the transmissivity of other band of light.Fig. 2 is that light transmits the path of the active layer into thin film transistor (TFT) shown in Fig. 1 and shows
It is intended to.
As shown in Fig. 2 the light 20 that sends of backlight is with normal angle of incidence to gate insulator 14, and it is exhausted in grid
There is reflection and transmit in two surfaces 201 and 202 of edge layer 14, can be with wherein 201 can be the surface with gate contact, 202
It is the surface contacted with active layer.Light surface 201 reflected light 21 with by gate insulator after in the anti-of surface 202
Light 22 is penetrated for same frequency, the two-beam line with constant phase difference, this two-beam line can be interfered, the intensity of interference light
With the cosine value cos δ positive correlations of the phase difference δ of two beam reflected lights.Assuming that being incident to each wave band on the surface 201 of gate insulator
The intensity of light is identical, then intensity and phase difference positive correlation of the light of each wave band by the interference light after two secondary reflections.
It is λ for wavelength1Light, the phase difference of two beam reflected lightsIt is λ for wavelength2Light,
The phase difference of two beam reflected lights
According to the characteristic of cos functions, when above formula (1), (2), (3) are met, the ＞ cos δ 2 of cos δ 1, then wavelength is λ1Two
The interference strength of beam reflected light is λ more than wavelength2Two beam reflected lights interference strength, namely wavelength be λ1Light reflection
Luminous intensity is λ more than wavelength2Light intensity of reflected light so that wavelength be λ1The transmitance of light be less than wavelength
λ2Light transmitance.
Alternatively, on the premise of above formula (1), (2), (3) are met, the value of δ 2 is bigger, then cos δ 2 are smaller, reflected light
Interference light intensity is smaller, then correspondingly transmitted intensity is bigger.In order to ensure the display panel comprising above-mentioned thin film transistor (TFT)
Transmitance, can as far as possible increase δ 2 and (for example increases n on the premise of above formula (1), (2), (3) are met20And/or increase is d), with
Reduce influence of the gate insulator to the transmitance of other color visibles in addition to blue violet light.
Similarly, in some optional implementations, when the thickness and refractive index of gate insulator meet equation below
(4), when (5), (6), the ＞ cos δ 2 of cos δ 1, gate insulator is λ for the transmissivity of the blue violet light of λ 1 is less than to wavelength to wavelength2
Its all band visible ray transmissivity：
Wherein, [b] represents the positive integer for being not more than b,Or
Alternatively, on the premise of above formula (4), (5), (6) are met, the value of δ 2 is smaller, then cos δ 2 are smaller, reflected light
Interference light intensity is smaller, then correspondingly transmitted intensity is bigger.In order to ensure the display panel comprising above-mentioned thin film transistor (TFT)
Transmitance, can as far as possible reduce δ 2 and (for example reduces n on the premise of above formula (4), (5), (6) are met20And/or reduction is d), with
Reduce influence of the gate insulator to the transmitance of other color visibles in addition to blue violet light.
Fig. 3 is refer to, it illustrates the structural representation of another embodiment of the thin film transistor (TFT) according to the application.
Similar with Fig. 1, thin film transistor (TFT) 300 shown in Fig. 3 includes grid 301, active layer 302, source electrode 303 and drain electrode
304.Wherein, grid 301 is formed at gate metal layer 31, and active layer 302 is formed at oxide semiconductor layer 32, the He of source electrode 303
Drain electrode 304 is formed at Source and drain metal level 33.Above-mentioned gate metal layer 31 can be formed at the side of substrate 30, Source and drain metal level 33
Positioned at oxide semiconductor layer 32 away from gate metal layer 31 side, and source electrode 303 and drain electrode 304 connect with active layer 302
Touch.
Gate insulator 34 is provided between grid 301 and active layer 302, the gate insulator 34 insulate including first grid
Layer 341 and second grid insulating barrier 342.Wherein, second grid insulating barrier 342 is located at first grid insulating barrier 341 away from grid
The side of metal level 31.That is, first grid insulating barrier 341 is in contact with gate metal layer 31, second grid insulating barrier
342 are in contact with oxide semiconductor layer 32.
In the present embodiment, first grid insulating barrier 341 is λ for any wavelength1Light refractive index be more than second gate
Pole insulating barrier 342 is λ for any wavelength1Light refractive index；And first grid insulating barrier 341 is λ for any wavelength2
Light refractive index more than second grid insulating barrier 342 for any wavelength be λ2Light refractive index, wherein 400nm≤λ1≤
480nm, 480nm ＜ λ2≤780nm。
Herein, the material of first grid insulating barrier 341 can be silicon nitride, and the material of second grid insulating barrier 342 can
Think silica.Any wavelength of first grid insulating barrier 341 pairs is λ3Light refractive index be n1, second grid insulating barrier 342
It is λ for any wavelength3Light refractive index be n2, 1.88≤n1≤ 2.15,1.45≤n2≤1.60；Wherein, 400nm≤λ3≤
780nm.That is, in visible light wave range, the refractive index of first grid insulating barrier 341 is more than second grid insulating barrier 342
Refractive index.Also, as wavelength increases, the refractive index of first grid insulating barrier 341 is gradually reduced, second grid insulating barrier
341 refractive index is gradually reduced.
Further, any wavelength of above-mentioned first grid insulating barrier 341 pairs is λ1Light transmitance be higher than to any ripple
A length of λ2Light transmitance；Any wavelength of above-mentioned second grid insulating barrier 342 pairs is λ1Light transmitance be higher than to any ripple
A length of λ2Light transmitance.So, the light of each band of light strongly consistent is exhausted by first grid insulating barrier, second grid
When edge layer is incident to the active layer of thin film transistor (TFT), the light of the light intensity less than the light of other visible light wave ranges of the blue violet light of transmission
By force so that the light intensity for being incident to the blue violet light of active layer declines, protection can be formed to the oxide semiconductor of active layer, so that
Lift the stability of thin film transistor (TFT).
With continued reference to Fig. 4, it illustrates the path signal that light transmits the active layer into thin film transistor (TFT) shown in Fig. 3
Figure.
As shown in figure 4, light 40 is with normal angle of incidence to gate insulator, and in first grid insulating barrier 341
There is reflection and transmit in first surface 401 and second surface 402, wherein first surface 401 can be to be connect with gate metal layer 31
Tactile surface, second surface 402 can be the surface contacted with second grid insulating barrier 342.Light occurs in first surface 401
The reflected light 41 of the generation after reflection and the reflected light 42 produced after second surface 402 reflects are interfered, interference light
Intensity and two beam reflected lights 41 and 42 phase difference δ ' cosine value cos δ ' positive correlations.
Assuming that the thickness of first grid insulating barrier is d1, first grid insulating barrier is λ to wavelength1The refractive index of light be
n11, first grid insulating barrier is λ to wavelength2Light refractive index be n12, it is λ for wavelength1Light, sent out in first surface 401
Give birth to the reflected light 41 of the generation after reflection and after second surface 402 reflects from the first table of first grid insulating barrier 341
The phase difference of the reflected light 42 of face outgoingIt is λ for wavelength2Light, occur in first surface 401
The phase difference of the reflected light 41 of the generation after reflection and the reflected light 42 produced after second surface 402 reflects
For arbitrary λ1, λ2, when meet as following formula (7), (8), (9) when, first surface 401 reflect after generation
Reflected light 41 and after second surface 402 reflects produce reflected light 42 interfere after interference light in, blue violet light
Interference light intensity more than its all band visible ray interference light intensity：
Wherein, [x] represents the positive integer for being not more than x,Or
The refractive index parameter n of above-mentioned first grid insulating barrier 341 can be then determined according to formula (7), (8), (9)11、n12With
Thickness parameter d1So that the intensity for being incident to blue violet light in the light of the second insulating barrier 342 is strong less than its all band visible ray
Degree.
Alternatively, on the premise of above formula (7), (8), (9) are met, less refractive index n can be selected12With less thickness
Degree d1, so that increase δ 2 ', to reduce the light of visible light wave range of the first grid insulating barrier to wavelength between 480nm to 780nm
Intensity of reflected light, so as to increase the transmitted intensity of other visible light wave ranges in addition to blue violet light, lift the utilization rate of backlight.
Similarly, in some optional implementations, when the thickness and refractive index of first grid insulating barrier 341 meet as follows
When formula (10), (11), (12), the ＞ cos δ 2 ' of cos δ 1 ', first grid insulating barrier 341 is λ to wavelength1Blue violet light transmission
It is λ that rate is less than to wavelength2Its all band visible ray transmissivity：
Wherein, [x] represents the positive integer for being not more than x,Or
Alternatively, on the premise of above formula (10), (11), (12) are met, larger refractive index n can be selected12With it is larger
Thickness d1, so that reduce δ 2 ', to reduce visible light wave range of the first grid insulating barrier to wavelength between 480nm to 780nm
Light intensity of reflected light, so as to increase the transmitted intensity of other visible light wave ranges in addition to blue violet light, lift the profit of backlight
With rate.
Light is incident to after second grid insulating barrier 342 by the second surface 402 of first grid insulating barrier 341,
Reflected at the 3rd surface 403 that second grid insulating barrier 342 is contacted with active layer, reflected light is by second grid insulating barrier
342 are incident to first grid insulating barrier 341, and the reflected light 44 is with the generation reflection in second surface and in first grid insulating barrier
The reflected light 43 of interior propagation is interfered, the phase difference δ of interference light intensity and two beam reflected lights 43 and 44 " cosine value cos δ "
Positive correlation.
Assuming that the thickness of second grid insulating barrier is d2, first grid insulating barrier is λ to wavelength1The refractive index of light be
n21, first grid insulating barrier is λ to wavelength2Light refractive index be n22, it is λ for wavelength1Light, reflected light 43 and reflected light
44 phase differenceIt is λ for wavelength2Light, the phase difference of reflected light 43 and reflected light 44
In some optional implementations, for arbitrary λ1, λ2, when meeting such as following formula (13), (14), (15),
There is the reflected light 43 for reflecting and being propagated in first grid insulating barrier at second surface 402 and reflected simultaneously by the 3rd surface 403
The reflected light 44 transmitted to first grid insulating barrier interfere after interference light in, the interference light intensity of blue violet light is more than it
The interference light intensity of all band visible ray：
Wherein, [y] represents the positive integer for being not more than y,Or
The refractive index parameter n of above-mentioned second grid insulating barrier 342 can be then determined according to formula (13), (14), (15)21、n22
With thickness parameter d2So that it is incident to the intensity of the intensity less than its all band visible ray of blue violet light in the light of active layer.
Alternatively, on the premise of above formula (13), (14), (15) are met, less refractive index n can be selected22It is smaller
Thickness d2, so as to increase δ 2 ", to reduce visible light wave range of the second grid insulating barrier to wavelength between 480nm to 780nm
Light intensity of reflected light, so as to increase the transmitted intensity of other visible light wave ranges in addition to blue violet light, lift the profit of backlight
With rate
Similarly, in some optional implementations, when the thickness and refractive index of second grid insulating barrier 342 meet as follows
When formula (16), (17), (18), cos δ 1 " ＞ cos δ 2 ", second grid insulating barrier 342 is the transmission of the blue violet light of λ 1 to wavelength
It is the transmissivity of its all band visible ray of λ 2 that rate is less than to wavelength：
Wherein, [y] represents the positive integer for being not more than y,Or
Alternatively, on the premise of above formula (16), (17), (18) are met, larger refractive index n can be selected22With it is larger
Thickness d2, so as to reduce δ 2 ", to reduce visible light wave range of the second grid insulating barrier to wavelength between 480nm to 780nm
Light intensity of reflected light, so as to increase the transmitted intensity of other visible light wave ranges in addition to blue violet light, lift the profit of backlight
With rate.
In some optional implementations, the refractive index ginseng of first grid insulating barrier 341 and second grid insulating barrier 342
Number n11、n12、n21、n22With thickness parameter d1、d2Can meet：
Wherein, [z] represents the positive integer for being not more than z,Or
At this moment, vertical incidence light 40 is anti-with through the 3rd surface 403 in the reflected light 41 that first surface 401 occurs reflection generation
After penetrating by the interference light of the reflected light 45 of the outgoing of first surface 401 in, wavelength is λ1Light interference light intensity higher than wavelength be λ2
Light interference light intensity, then, it is seen that after by whole gate insulator 34, the transmitance of blue violet light can less than other for light
The transmitance of the light of optical band is seen, so as to improve the stability of the oxide semiconductor of the active layer of thin film transistor (TFT).
Similarly, in some optional implementations, when first grid insulating barrier 341 and second grid insulating barrier 342
Refractive index parameter n11、n12、n21、n22With thickness parameter d1、d2When meeting following (22), (23), the condition of (24), it is also possible to make
Transmitance of the transmitance of blue violet light less than the light of other visible light wave ranges：
Wherein, [z] represents the positive integer for being not more than z,Or
Herein, it is λ for wavelength1Light, the phase difference of reflected light 41 and reflected light 45
It is λ for wavelength2Light, the phase difference of reflected light 41 and reflected light 45
Above-mentioned each implementation can make visible ray by after gate insulator transmission, royal purple light transmission rate is less than other
The transmitance of wave band visible ray, realizes the choosing of the spectral range of oxide semiconductor material to being incident to thin film transistor (TFT)
Select, decline the royal purple luminous intensity larger to the stability influence of oxide semiconductor material, improve the steady of thin film transistor (TFT)
It is qualitative.
Alternatively, the thickness d 2 of the thickness d 1 of above-mentioned first grid insulating barrier and second grid insulating barrier can be in following model
Enclose middle selection：As 70nm≤d1≤90nm, 90nm≤d2≤110nm；As 200nm≤d1≤220nm, 100nm≤d2≤
150nm, or 270nm≤d2≤300nm；As 75nm≤d1≤85nm, 105nm≤d2≤115nm；When 200nm≤d1≤
During 210nm, 105nm≤d2≤115nm, or 270nm≤d2≤280nm.
Fig. 5 is refer to, it illustrates a kind of transmitance frequency spectrum simulation curve of thin film transistor (TFT) of the embodiment of the present application.Its
In with the material of the first grid insulating barrier in above-described embodiment as silicon nitride, thickness is 80nm, the material of second grid insulating barrier
Expect to be silica, thickness is for as a example by 110nm, each wave band visible ray for testing out same intensity using simulation software is golden by grid
Category layer is incident to the light intensity curve of outgoing after gate insulator to active layer.Abscissa is wavelength (λ), and ordinate is by first
Transmitance (Tr) after gate insulator and second grid insulating barrier.As can be seen that in royal purple optical band (400nm-
480nm), transmitance is less than 92%, and mean transmissivity is 89.1%；In its all band, transmitance is more than 92%, mean transmissivity
It is 97.6%.It can be seen that, above-mentioned first grid insulating barrier and second grid insulating barrier while royal purple light transmission rate is reduced, to it
The transmitance of all band light has small influence, so as to avoid display while the stability of thin film transistor (TFT) is lifted
Overall brightness be affected.
The embodiment of the present application additionally provides a kind of array base palte, including above-described embodiment thin film transistor (TFT).Fig. 6 show
The structural representation of one embodiment of the array base palte according to the application.
As shown in fig. 6, array base palte 600 include a plurality of scan line 601 for extending in a first direction, it is a plurality of in a second direction
The data wire 602 that extension intersects with scan line 601, and positioned at the multiple intersected to form by scan line 601 and data wire 602
Multiple pixel electrodes 603 in pixel region.Array base palte 600 also includes the multiple thin film transistor (TFT)s 604 being arranged in array, respectively
Thin film transistor (TFT) 604 can be the thin film transistor (TFT) of above-described embodiment.The grid of each thin film transistor (TFT) 604 and a scan line
601 electrical connections, the source electrode of each thin film transistor (TFT) 604 is electrically connected with a data line 602, the leakage of each thin film transistor (TFT) 604
Pole electrically connects with corresponding pixel electrode 603.
In display, each scan line 601 provides Continuity signal, each row film crystal to each row thin film transistor (TFT) 604 successively
Pipe 604 is sequentially turned on.When a line thin film transistor (TFT) 604 is turned on, row thin film transistor (TFT) company is transmitted respectively per data line 602
The display drive signals of the pixel electrode for connecing, thin film transistor (TFT) 604 transmits to corresponding pixel corresponding display drive signals
Electrode, it is achieved thereby that the scanning of array base palte shows.
The embodiment of the present application additionally provides a kind of display panel, including above-mentioned array base palte.The display panel can be such as
Liquid crystal display panel 700 shown in Fig. 7, including the array base palte 71 described by examples above, with array base palte 71
The color membrane substrates 72 being arranged oppositely and the liquid crystal 73 seen between 72 positioned at array base palte 71 and color film.The direction of arrow in Fig. 7
Represent the incident direction of the light that the backlight of liquid crystal display panel 700 is provided.The light that backlight is provided is being incident to array
Before the active layer of the thin film transistor (TFT) on substrate 71, the intensity of blue violet light declines, such that it is able to having for protective film transistor
Active layer material, lifts the stability of thin film transistor (TFT), and then lift the stability of display panel work.
Above description is only the preferred embodiment and the explanation to institute's application technology principle of the application.People in the art
Member is it should be appreciated that involved invention scope in the application, however it is not limited to the technology of the particular combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where the inventive concept is not departed from, is carried out by above-mentioned technical characteristic or its equivalent feature
Other technical schemes for being combined and being formed.Such as features described above has similar work(with (but not limited to) disclosed herein
The technical scheme that the technical characteristic of energy is replaced mutually and formed.
Claims (17)
1. a kind of thin film transistor (TFT), it is characterised in that including：Grid, active layer, source electrode and drain electrode；
Wherein, the grid is formed at gate metal layer, and the active layer is formed at oxide semiconductor layer, the source electrode and institute
State drain electrode and be formed at Source and drain metal level, the Source and drain metal level is located at the oxide semiconductor layer away from the gate metal layer
Side, and the source electrode and the drain electrode be in contact with the active layer；
Gate insulator is provided between the grid and the active layer；
The gate insulator is λ to any wavelength1Light transmitance be less than to any wavelength be λ2Light transmitance；
Wherein 400nm≤λ1≤ 480nm, 480nm ＜ λ2≤780nm。
2. thin film transistor (TFT) according to claim 1, it is characterised in that the thickness of the gate insulator is d, the grid
Pole insulating barrier is λ to wavelength1Light refractive index be n10, the gate insulator is λ to wavelength2Light refractive index be n20；
For arbitrary λ1, λ2, meet：
Wherein, [a] represents the positive integer for being not more than a,Or
3. thin film transistor (TFT) according to claim 1, it is characterised in that the thickness of the gate insulator is d, the grid
Pole insulating barrier is λ to wavelength1Light refractive index be n10, the gate insulator is λ to wavelength2Light refractive index be n20；
For arbitrary λ1, λ2, meet：
Wherein, [b] represents the positive integer for being not more than b,Or
4. the thin film transistor (TFT) according to claim any one of 1-3, it is characterised in that the material of the gate insulator is
Silica.
5. thin film transistor (TFT) according to claim 1, it is characterised in that the gate insulator includes first grid insulation
Layer and second grid insulating barrier；
The second grid insulating barrier is located at side of the first grid insulating barrier away from the gate metal layer；
The first grid insulating barrier is λ for any wavelength1Light refractive index more than the second grid insulating barrier for appoint
Meaning wavelength is λ1Light refractive index；
The first grid insulating barrier is λ for any wavelength2Light refractive index more than the second grid insulating barrier for appoint
Meaning wavelength is λ2Light refractive index.
6. thin film transistor (TFT) according to claim 5, it is characterised in that the first grid insulating barrier is to any wavelength
λ1Light transmitance be higher than to any wavelength be λ2Light transmitance；
The second grid insulating barrier is λ to any wavelength1Light transmitance be higher than be to any wavelength λ2Light transmission
Rate.
7. thin film transistor (TFT) according to claim 5, it is characterised in that the first grid insulating barrier is for any wavelength
It is λ3Light refractive index be n1, the second grid insulating barrier is λ for any wavelength3Light refractive index be n2, 1.88≤
n1≤ 2.15,1.45≤n2≤1.60；
Wherein, 400nm≤λ3≤780nm。
8. thin film transistor (TFT) according to claim 5, it is characterised in that the thickness of the first grid insulating barrier is d1, institute
It is λ that first grid insulating barrier is stated to wavelength1Light refractive index be n11, the first grid insulating barrier is λ to wavelength2Light
Refractive index is n12；
For arbitrary λ1, λ2, meet：
Wherein, [x] represents the positive integer for being not more than x,Or
9. thin film transistor (TFT) according to claim 5, it is characterised in that the thickness of the first grid insulating barrier is d1, institute
It is λ that first grid insulating barrier is stated to wavelength1Light refractive index be n11, the first grid insulating barrier is λ to wavelength2Light
Refractive index is n12；
For arbitrary λ1, λ2, meet：
Wherein, [x] represents the positive integer for being not more than x,Or
10. thin film transistor (TFT) according to claim 5, it is characterised in that the thickness of the second grid insulating barrier is d2,
The second grid insulating barrier is λ to wavelength1Light refractive index be n21, the second grid insulating barrier is λ to wavelength2Light
Refractive index be n22；For arbitrary λ1, λ2, meet：
Wherein, [y] represents the positive integer for being not more than y,Or
11. thin film transistor (TFT)s according to claim 5, it is characterised in that the thickness of the second grid insulating barrier is d2,
The second grid insulating barrier is λ to wavelength1Light refractive index be n21, the second grid insulating barrier is λ to wavelength2Light
Refractive index be n22；For arbitrary λ1, λ2, meet：
Wherein, [y] represents the positive integer for being not more than y,Or
12. thin film transistor (TFT)s according to claim 5, it is characterised in that the thickness of the first grid insulating barrier is d1,
The first grid insulating barrier is λ to wavelength1Light refractive index be n11, the first grid insulating barrier is λ to wavelength2Light
Refractive index be n12；The thickness of the second grid insulating barrier is d2, the second grid insulating barrier is λ to wavelength1Light
Refractive index is n21, the second grid insulating barrier is λ to wavelength2Light refractive index be n22；For arbitrary λ1, λ2, meet：
Wherein, [z] represents the positive integer for being not more than z,Or
13. thin film transistor (TFT)s according to claim 5, it is characterised in that the thickness of the first grid insulating barrier is d1,
The first grid insulating barrier is λ to wavelength1Light refractive index be n11, the first grid insulating barrier is λ to wavelength2Light
Refractive index be n12；The thickness of the second grid insulating barrier is d2, the second grid insulating barrier is λ to wavelength1Light
Refractive index is n21, the second grid insulating barrier is λ to wavelength2Light refractive index be n22；For arbitrary λ1, λ2, meet：
Wherein, [z] represents the positive integer for being not more than z,Or
14. thin film transistor (TFT)s according to claim 5, it is characterised in that the thickness of the first grid insulating barrier is d1,
The thickness of the second grid insulating barrier is d2；
As 70nm≤d1≤90nm, 90nm≤d2≤110nm；
As 200nm≤d1≤220nm, 100nm≤d2≤150nm, or 270nm≤d2≤300nm；
As 75nm≤d1≤85nm, 105nm≤d2≤115nm；
As 200nm≤d1≤210nm, 105nm≤d2≤115nm, or 270nm≤d2≤280nm.
15. thin film transistor (TFT)s according to claim 5, it is characterised in that the material of the first grid insulating barrier is nitrogen
SiClx, the material of the second grid insulating barrier is silica.
16. a kind of array base paltes, it is characterised in that including the thin film transistor (TFT) as described in claim any one of 1-15.
17. a kind of display panels, it is characterised in that including array base palte as claimed in claim 16.
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| CN103109360A (en) * | 2011-08-26 | 2013-05-15 | 松下电器产业株式会社 | Thin film transistor array fabrication method, thin film transistor array, and display device |
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