CN106895707A - A kind of heat treatment substrate, the preparation method and application of substrate have the annealing device of the substrate - Google Patents
A kind of heat treatment substrate, the preparation method and application of substrate have the annealing device of the substrate Download PDFInfo
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- CN106895707A CN106895707A CN201510960176.6A CN201510960176A CN106895707A CN 106895707 A CN106895707 A CN 106895707A CN 201510960176 A CN201510960176 A CN 201510960176A CN 106895707 A CN106895707 A CN 106895707A
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- Prior art keywords
- substrate
- layer
- diffusion impervious
- absorbed layer
- bases
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/0043—Floors, hearths
Abstract
The present invention relates to a kind of substrate, including by heating source radiation wavelength substantially without the material for the absorbing substrate being made, the absorbed layer being made up of the material to heating source radiated wave with high-absorbility, the diffusion impervious layer for stopping the migration of ion and atom included in substrate or absorbed layer, absorbed layer is arranged on substrate, and diffusion impervious layer covering is arranged on absorbed layer.The invention further relates to a kind of preparation method of substrate, successively on substrate by the way of physical vapour deposition (PVD) or chemical vapor deposition deposit absorbent layer and diffusion impervious layer.The present invention also relates to a kind of annealing device, including body, is arranged on intrinsic heating source and foregoing substrate, and heating source is located at the substrate near the side of substrate.Substrate and annealing device in the present invention can realize accurate heat treatment to high-throughout combined material, and treatment effeciency is high.
Description
Technical field
The present invention relates to material heat treatment technical field, more particularly to high flux microcell rapid thermal processing technique field, specifically
It is related to a kind of substrate of heat treatment, has the substrate the invention further relates to the preparation method of the substrate, and a kind of application
Annealing device.
Background technology
Heat treatment is the means that material is passed through into heating, insulation and cooling, to obtain a kind of material of intended tissue and performance
Processing technology, it can all produce material impact to the defect of material, stress, structure, pattern etc., be answered with extensive
With.Various furnace binding, such as tube furnace, batch-type furnace, Muffle furnace being used existing Technology for Heating Processing, such equipment tool more
The characteristics of having heating surface (area) (HS big, it is adaptable to the heat treatment of large area material sample.But generally required during investigation of materials
The experiment of many material samples, multi-parameter is carried out, generally requires to carry out largely using existing annealing device in this case
Experiment, consume substantial amounts of human and material resources and the energy, time and effort consuming.
High flux combined material is prepared with characterization technique as a kind of efficient investigation of materials method, is extensively paid attention in recent years.
It forms combined material chip for deliberation by the integrated thousands of groups of material samples on single small area substrate.
This preparation method can increase substantially material sample and prepare flux, improve Efficiency, but this combined material core
The area of single material sample is generally all smaller on piece, and only micron is to millimeter magnitude sometimes.Application publication number is
The Chinese invention patent application of CN104498677A (Application No. 201510002879.8)《A kind of fast speed heat of high flux microcell
Processing equipment and its heat treatment method》, in its disclosed Equipment for Heating Processing, using laser as irradiated heat source to combination
Material chip carries out microcell heat treatment, realizes that thermal treatment zone is controllable the characteristics of using LASER HEAT TREATMENT rapid heating and cooling, passes through
The intensity and frequency in regulation LASER HEATING source per single material sample in high flux material respectively to heating, it is possible to achieve
The microcell rapid thermal treatment of combined material chip.Due to for heat laser be often with a certain fixed wave length, and
In combinatorial materials libraries have heterogeneity, structure material for the wavelength laser may have different absorption coefficients,
Absorptivity etc., the actual heat treatment process for causing different materials to be experienced under same experimental conditions there may be difference, drop
The reliability of low high flux experiment.
The content of the invention
First technical problem to be solved by this invention be directed to above-mentioned prior art one kind is provided being capable of alternative materials sample
Directly irradiated and heated microcell heat treatment mode, and irradiation luminous energy is changed into by heat energy by standard absorption layer, then
The substrate of material heating is carried out by solid thermal conduction.
Second technical problem to be solved by this invention be directed to above-mentioned prior art provide one kind prepare can carry out light-
Thermal energy is changed, and the method that the substrate of material heating is carried out by heat transfer.
3rd technical problem to be solved by this invention is directed to above-mentioned prior art and provides one kind can utilize above-mentioned lining
Bottom carries out the annealing device of material heat treatment.
The present invention solve technical scheme that above-mentioned first technical problem used for：A kind of substrate, it is characterised in that：Bag
Include including by the irradiation wavelengths to irradiated heat source substantially without absorb material be made substrate, by heating source radiated wave have
Absorbed layer that the material for having high-absorbility and absorption coefficient is made, for stop included in the substrate or absorbed layer from
Described in son, the diffusion impervious layer that migrate to material sample of atom, the absorbed layer and the diffusion impervious layer are stacked and are arranged on
On substrate.
Preferably, the heating parameters of different materials sample are adjusted for convenience, and the absorbed layer is an integral unit or bag
Multiple independent absorptive units are included, multiple absorptive units are spaced setting on the substrate.
In order to reduce influencing each other in each material sample heating process, the diffusion impervious layer is an integral unit or bag
Multiple independent blocking units are included, each blocking unit one absorptive unit of correspondence stacks setting.
According to different material heating requirements, heating parameters are adjusted for convenience, the substrate is at least provided with a laminar substrate
Lamination, at least provided with one layer of absorption lamination, the diffusion impervious layer is at least provided with one layer of barrier laminate for the absorbed layer.
Selectively, every layer of substrate joining is by silicon chip, soda-lime glass, quartz glass, corundum, Pyrex, indigo plant
A kind of or at least two combinations material in jewel, ruby, chalcogenide glass is made；
Every layer absorbs lamination by Si, a-Si, Ge, SiC, SiGe, a-C, GaAs, Ti, SiO2、Au、Ag、W、
Mo、Ti、Cr、Pt、ZnO、TiO2、Cr2O3、Al2O3In it is a kind of or at least two combination materials be made；
Every layer of barrier laminate by Ti bases, Ta bases, W bases, Zr bases, Pt bases, Cr bases, Mo bases, Co bases nitridation
A kind of or at least two combinations material in thing, oxide, silicide is made.
Preferably, the substrate thickness is 0.1mm~5mm；The absorber thickness is 10nm~10 μm, the expansion
It is 10nm~10 μm to dissipate barrier layer thickness.
The present invention solve technical scheme that above-mentioned second technical problem used for：A kind of method prepared by substrate, it is special
Levy is to comprise the following steps：
The substrate that step one, offer are made without the material for absorbing substantially to the irradiation wavelengths in irradiated heat source；
Step 2, the stacking sequentially, respectively according to absorbed layer on substrate on substrate according to absorbed layer and diffusion impervious layer
Distribution design deposit absorbent layer, according to diffusion impervious layer distribution design deposit diffusion barriers.
Preferably, in the step one, the surface of substrate is polished, sandblasting or making herbs into wool pretreatment, in the suction
Before receiving layer deposition, cleaning treatment is carried out to substrate；The absorption is deposited on substrate surface after cleaning treatment after the pre-treatment
Layer and diffusion impervious layer.
The present invention solve technical scheme that above-mentioned 3rd technical problem used for：A kind of annealing device, its feature exists
In：Including substrate as claimed in claim 1, also including the body with accommodating cavity and the accommodating of the body is arranged on
Heating source in chamber, the substrate is arranged in the accommodating cavity of the body.
Preferably, the heating source is that light irradiates element, light irradiation element can be Halogen lamp LED, ultraviolet kind of thread elements,
A kind of in laser diode, synchrotron radiation X-ray light source or at least two combination.
Compared with prior art, the advantage of the invention is that：Heat treatment substrate in the present invention and it is applied to the substrate
Annealing device, heating source is irradiated to the photon energy at substrate by absorbed layer and is converted into heat energy, and then passed by heat
The mode led transfers thermal energy to material sample, so as to realize the heat treatment of material sample.Due to complete at each material sample
The absorbed layer physical property converted to heat energy into luminous energy is always, it is ensured that the controllable precise of heat treatment process parameter, improves high pass
The reliability of discrete microcell heat treatment in amount combined material experiment.According to different object of experiments, different adding, can be set
The absorbed layer of thermal source or different materials, to realize that absorbed layer absorbs the otherness of heat, and then meets a large amount of different materials samples
The heating requirements of product, so as to carry out precise control to the heat treatment of each material sample.Simultaneously can also be by diffusion impervious layer
Ion, the influence of atom pair material sample are included in isolated substrate and absorbed layer.The heat treatment substrate and application have the lining
The annealing device at bottom effectively raises the universality of material heat treatment.The preparation method of substrate can then be made in the present invention
The standby substrate for realizing the effect above.
Brief description of the drawings
Fig. 1 is the structural representation of substrate in embodiment one in the embodiment of the present invention.
Fig. 2 is the structural representation of annealing device in embodiment one in the embodiment of the present invention.
Fig. 3 is the structural representation of substrate in embodiment two in the embodiment of the present invention.
Fig. 4 is the structural representation of substrate in embodiment three in the embodiment of the present invention.
Fig. 5 is the structural representation of substrate in example IV in the embodiment of the present invention.
Specific embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
Embodiment one
As shown in figure 1, the substrate in the present embodiment, including substrate 1, absorbed layer 2 and diffusion impervious layer 3, absorbed layer 2
Setting is stacked with diffusion impervious layer 3 on substrate 1.
According to printing opacity require, substrate 1 can for single layer structure can also for many laminated construction, i.e. substrate 1 at least provided with
One laminar substrate lamination, can be by silicon chip, soda-lime glass, quartz glass, corundum, Pyrex, indigo plant per laminar substrate lamination
A kind of or at least two combined material in jewel, ruby or chalcogenide glass (Chalcogenide glass) is made.
Halogen lamp LED, ultraviolet elements, laser, synchrotron radiation X of the substrate that these materials are made 1 pair as heating source 7
The radiation wavelength of the light such as ray source irradiation element is substantially without absorption.The thickness of substrate 1 can be preferably 0.1mm~5mm
Between any value thickness.
Absorbed layer is used to for the luminous energy that irradiated heat source is sent to be converted into heat energy, and by solid thermal conduction process by the heat
Material sample can be passed to via diffusion impervious layer.The overall sedimentary of absorbed layer 2 one in the present embodiment, absorbed layer 2 by
There is high-absorbility and the material of absorption coefficient to be made the radiated wave of heating source 7.For the purpose of optimizing thermal effectiveness, inhale
Receive the laminated construction that layer 2 could be arranged to individual layer or multilayer, i.e. absorbed layer 2 and at least include one layer of absorption lamination, often
Layer absorbs lamination can be by Si, a-Si, Ge, SiC, SiGe, a-C, GaAs, Ti, SiO2、Au、Ag、W、
Mo、Ti、Cr、Pt、ZnO、TiO2、Cr2O3、Al2O3In a kind of or at least two combined material be made.
The absorbed layer 2 being formed by stacking by multi-layer film material, is easy to experimenter according to the demand of experimental work, by adjusting each suction
The order and material of lamination are received, absorbed layer optical and thermal energy conversion performance and heat-conductive characteristic is modulated.The thickness of absorbed layer 2
The thickness of any value between 10nm~10 μm can be preferably.
Diffusion impervious layer 3 is used to stop included in substrate 1 or absorbed layer 2 ion, atom in heat treatment process to material
Material sample migration, it is to avoid the influence to material sample.Diffusion impervious layer 3 in the present embodiment is an integral unit, according to
The different blocking effect requirement of material sample, the diffusion impervious layer could be arranged to the lamination knot of single layer structure or multilayer
Structure, i.e. diffusion impervious layer 3 at least include one layer of barrier laminate, every layer of barrier laminate can by TiN, TiW, TaSiN,
A kind of or at least two combinations material in TiSiN is made.The diffusion impervious layer 3 being formed by stacking by multi-layer film material,
It is easy to experimenter according to need of work, by adjusting barrier laminate order and material therefor, modulates diffusion impervious layer 3 pairs
The barrier properties and heat-conductive characteristic of atom, ion etc..The thickness of diffusion impervious layer 3 can be preferably 10nm~10 μm it
Between any value thickness.
Method prepared by foregoing substrate is comprised the following steps：
The substrate 1 that step one, offer are made without the material for absorbing substantially to the irradiation wavelengths in irradiated heat source 7, to substrate
1 surface is polished, sandblasting or making herbs into wool are pre-processed, and carry out cleaning treatment to substrate 1；
It is suitable according to stacking for absorbed layer 2, diffusion impervious layer 3 and material sample after step 2, the cleaning treatment of substrate 1
Sequence distinguishes deposit absorbent layer 2, diffusion impervious layer 3 and material sample on substrate 1；
The deposition process of absorbed layer 2 is：On substrate 1 according to absorbed layer 2 distribution design, using physical vapour deposition (PVD),
The films such as chemical vapor deposition, atomizing spraying, piezoelectric ink jet printing, slot coated or thick film deposition mode are sunk on substrate
Product absorbed layer 2；
The deposition process of diffusion impervious layer 3 is：Designed according to the distribution of diffusion impervious layer 3 on substrate 1, using physics
The mode deposit diffusion barriers such as vapour deposition, chemical vapor deposition, atomizing spraying, piezoelectric ink jet printing, slot coated
3。
As shown in Fig. 2 the annealing device in the present invention, including foregoing substrate 100, also including with accommodating cavity
Body 6 and the heating source 7 being arranged in the accommodating cavity of body 6, substrate 100 are arranged in the accommodating cavity of body 6.This
Heating source 7 in embodiment irradiates element for light, and light irradiation element is Halogen lamp LED, ultraviolet kind of thread elements, laser diode, same
Step radiation X ray light source in it is a kind of or at least two combination.The annealing device can also include for control and
Control device and detection means of working environment and working condition etc., realize the heat to multiple material samples in detection accommodating cavity
Treatment control.
When in use, as needed, when in use, the placement order of substrate and material sample can be adopted the annealing device
Mode is stacked with the following two kinds.
As shown in figure 1, the first stacks mode being：Substrate, absorbed layer, diffusion impervious layer, material sample are from bottom to top
Arrangement is stacked, this stacks the substrate of mode when in use, heating source 7 is located at substrate near the side of substrate 1, substrate 1
It is made transparent, then heating source 7 sends light is irradiated and be absorbed by the absorption layer by substrate 1 and be converted to heat, Jin Ertong
Diffusion impervious layer heat transfer is crossed on the material sample placed on the diffusion barrier.
Stacking mode second is：Substrate, material sample, diffusion impervious layer, absorbed layer stack arrangement from bottom to top,
When using, irradiated heat source 7 is arranged close to the side of absorbed layer, then the self-absorption of radiant heating source 7 layer top is to material sample
Product are heated, and the light that absorbed layer absorbs irradiated heat source 7 is irradiated and is converted to heat, and then by way of heat transfer
Heat is passed into material sample by diffusion impervious layer, the heat treatment to material sample is realized.Now to the material of substrate
Required without the transparency.
Heat treatment characteristic and absorbed layer 2 according to different materials sample is different to the thermal absorptivity in different heating source 7,
Matching sets the absorbed layer 2 of suitable heating source 7 and suitable material, and then completes to the accurate heat treated of material sample
Journey.The annealing device is being used, and whole heat treatment process speed is fast, efficiency high.
Embodiment two
As shown in figure 3, the substrate in the present embodiment is used and stacks mode with the first in embodiment one.The present embodiment with
The difference of embodiment one is：Diffusion impervious layer includes multiple independent blocking units 5, and multiple blocking units 5 are distinguished
It is disposed on absorbed layer 2.The diffusion impervious layer is in deposition, it is possible to use mask completes its multiple blocking unit 5 '
Deposition.
A material sample can be placed on each blocking unit 5, institute is in the gap between independent blocking unit 5
In the atmosphere of environment, the thermal insulation between material sample is effectively improved, can so prevent adjacent material sample in heat
Influencing each other in transmittance process, it is ensured that the accuracy of material sample heat treatment.
Embodiment three
As shown in figure 4, the substrate in the present embodiment is used and stacks mode with the first in embodiment one.The present embodiment with
The difference of embodiment one is：Absorbed layer includes multiple independent absorptive units 4, and multiple absorptive units 4 are spaced and set
Put on substrate 1.The absorbed layer is in deposition, it is possible to use mask completes the deposition of its multiple absorptive unit 4.
Material sample corresponds respectively to absorptive unit 4 and is placed on diffusion impervious layer 3.So can be according to different materials
Sample, is respectively provided with the absorptive unit 4 of different materials, and different material samples can also be correspondingly arranged the suction of the different numbers of plies
Receive unit 4.Even if using in the case of a heating source, the absorption of different absorptive unit 4 to radiation wavelength is different,
The heat treatment requirements of the corresponding differentiation for realizing different materials sample.So it is effectively ensured on the basis of save energy
The accuracy of the heat treatment process of different materials sample.
Example IV
As shown in figure 5, the present embodiment and embodiment three are differed only in：Diffusion impervious layer includes multiple blocking units 5,
The correspondence covering of each blocking unit 5 is arranged on an absorptive unit 4.Different material samples can also be correspondingly arranged not
With the absorptive unit 4 and the blocking unit 5 of the different numbers of plies of the number of plies.So can either save energy, it is ensured that different materials sample
The different heat treatment parameter of the correspondence of product, moreover it is possible to prevent adjacent material sample influencing each other in heat transfer process, greatly
The big accuracy that improve material sample heat treatment.
Claims (10)
1. a kind of substrate, it is characterised in that：Including by the irradiation wavelengths to irradiated heat source substantially without absorb material system
Into substrate (1), be made up of the material to heating source radiated wave with high-absorbility and absorption coefficient absorbed layer (2), use
In the diffusion impervious layer (3) for stopping that ion, atom are migrated to material sample included in the substrate (1) or absorbed layer (2),
The absorbed layer (2) and the diffusion impervious layer (3) are stacked and are arranged on the substrate (1).
2. substrate according to claim 1, it is characterised in that：The absorbed layer (2) is an integral unit or bag
Multiple independent absorptive units (4) are included, multiple absorptive units (4) are spaced and are arranged on the substrate (1).
3. substrate according to claim 1 and 2, it is characterised in that：The diffusion impervious layer (3) is overall single for one
Unit or including multiple independent blocking units (5), each blocking unit (5) one absorptive unit (4) of correspondence stacks setting.
4. substrate according to claim 1, it is characterised in that：The substrate (1) is folded at least provided with a laminar substrate
Layer, at least provided with one layer of absorption lamination, the diffusion impervious layer (3) is at least provided with one layer of stop for the absorbed layer (2)
Lamination.
5. substrate according to claim 4, it is characterised in that：Every layer of substrate joining is by silicon chip, sodium calcium glass
One kind in glass, quartz glass, corundum, Pyrex, sapphire, ruby, chalcogenide glass or at least two groups
The material of conjunction is made；
Every layer absorbs lamination by Si, a-Si, Ge, SiC, SiGe, a-C, GaAs, Ti, SiO2、Au、Ag、W、
Mo、Ti、Cr、Pt、ZnO、TiO2、Cr2O3、Al2O3In it is a kind of or at least two combination materials be made；
Every layer of barrier laminate by Ti bases, Ta bases, W bases, Zr bases, Pt bases, Cr bases, Mo bases, Co bases nitridation
A kind of or at least two combinations material in thing, oxide, silicide is made.
6. substrate according to claim 1, it is characterised in that：Substrate (1) thickness is 0.1mm~5mm；
Absorbed layer (2) thickness is 10nm~10 μm, and diffusion impervious layer (3) thickness is 10nm~10 μm.
7. a kind of method that prepared by substrate, it is characterised in that comprise the following steps：
The substrate (1) that step one, offer are made without the material for absorbing substantially to the irradiation wavelengths in irradiated heat source；
Step 2, the stacking sequentially, respectively on substrate (1) on substrate (1) according to absorbed layer (2) and diffusion impervious layer (3)
Deposit diffusion barrier is designed according to distribution design deposit absorbent layer (2) of absorbed layer (2), according to the distribution of diffusion impervious layer (3)
Layer (3).
8. the method that prepared by substrate according to claim 7, it is characterised in that：In the step one, to substrate
(1) surface is polished, sandblasting or making herbs into wool are pre-processed, and before the absorbed layer (2) deposition, substrate (1) is carried out clearly
Wash treatment；The absorbed layer (2) and diffusion impervious layer (3) are deposited on substrate (1) surface after cleaning treatment after the pre-treatment.
9. a kind of annealing device, it is characterised in that：Including substrate as claimed in claim 1 (100), also including tool
The heating source (7) for having the body (6) of accommodating cavity and being arranged in the accommodating cavity of the body (6), the substrate is arranged on described
In the accommodating cavity of body (6).
10. annealing device according to claim 9, it is characterised in that：The heating source (7) irradiates element for light,
The light irradiation element is the one kind or at least two in Halogen lamp LED, ultraviolet, laser, synchrotron radiation X-ray light source
Combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960176.6A CN106895707A (en) | 2015-12-17 | 2015-12-17 | A kind of heat treatment substrate, the preparation method and application of substrate have the annealing device of the substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960176.6A CN106895707A (en) | 2015-12-17 | 2015-12-17 | A kind of heat treatment substrate, the preparation method and application of substrate have the annealing device of the substrate |
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| Publication Number | Publication Date |
|---|---|
| CN106895707A true CN106895707A (en) | 2017-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510960176.6A Pending CN106895707A (en) | 2015-12-17 | 2015-12-17 | A kind of heat treatment substrate, the preparation method and application of substrate have the annealing device of the substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107389427A (en) * | 2017-07-10 | 2017-11-24 | 向勇 | Laser heating method and system |
| CN113764551A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | LED chip transfer method |
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| CN101409221A (en) * | 2007-10-10 | 2009-04-15 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
| CN102227802A (en) * | 2008-11-28 | 2011-10-26 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
| JP2014187163A (en) * | 2013-03-22 | 2014-10-02 | Mitsubishi Materials Corp | Aluminum heat exchanger, heat sink-equipped power module board, and method for manufacturing aluminum heat exchanger |
| CN104498677A (en) * | 2015-01-04 | 2015-04-08 | 宁波英飞迈材料科技有限公司 | Rapid thermal processing equipment for high-throughput microcells and thermal processing method of rapid thermal processing equipment |
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2015
- 2015-12-17 CN CN201510960176.6A patent/CN106895707A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101409221A (en) * | 2007-10-10 | 2009-04-15 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
| CN102227802A (en) * | 2008-11-28 | 2011-10-26 | 住友化学株式会社 | Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
| JP2014187163A (en) * | 2013-03-22 | 2014-10-02 | Mitsubishi Materials Corp | Aluminum heat exchanger, heat sink-equipped power module board, and method for manufacturing aluminum heat exchanger |
| CN104498677A (en) * | 2015-01-04 | 2015-04-08 | 宁波英飞迈材料科技有限公司 | Rapid thermal processing equipment for high-throughput microcells and thermal processing method of rapid thermal processing equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107389427A (en) * | 2017-07-10 | 2017-11-24 | 向勇 | Laser heating method and system |
| CN113764551A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | LED chip transfer method |
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