CN106877662A - A kind of tri-state Boost circuit and its modulator approach - Google Patents
A kind of tri-state Boost circuit and its modulator approach Download PDFInfo
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- CN106877662A CN106877662A CN201710214481.XA CN201710214481A CN106877662A CN 106877662 A CN106877662 A CN 106877662A CN 201710214481 A CN201710214481 A CN 201710214481A CN 106877662 A CN106877662 A CN 106877662A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
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- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of tri-state Boost circuit and its modulator approach, and methods described includes：Open the power switch pipe and the two-way switch pipe；When being zero by the electric current of second inductance, the two-way switch pipe is turned off；When maximum is reached by the electric current of first inductance, the power switch pipe is turned off so that the rectifying tube conducting；When predetermined time of the rectifying tube before conducting is terminated, the two-way switch pipe is opened；When the electric current by first inductance is equal to by the electric current of second inductance, the rectifying tube, modulation terminates are turned off.The present invention is improved by the basis of traditional Boost circuit, and provides a kind of modulator approach of tri-state Boost circuit, makes inductive current inside afterflow, so as to reduce inductance ripple current, reduces core loss, improves the efficiency of Boost circuit.
Description
Technical field
The present invention relates to electronic technology field, more particularly, to a kind of tri-state Boost circuit and its modulator approach.
Background technology
At present, as energy crisis is increasingly sharpened, the power supply for possessing higher efficiency turns into necessity.In low-voltage, high-current
In occasion, switching tube loss and inductive current are lost the overwhelming majority for constituting circuit loss, and reducing this partition losses will save
Substantial amounts of heat waste is saved, the conversion efficiency of stable operation, circuit topology and the safety of working environment for switching device have
Significance.
Traditional Boost circuit is used widely because that can realize boosting, but traditional Boost circuit due to
Inductance core loss is big, and synchronous rectifier has hard turn-off power loss so that traditional Boost circuit cannot meet efficiency density
It is required that high application.
The content of the invention
The present invention provides a kind of a kind of tri-state Boost electricity for overcoming above mentioned problem or solving the above problems at least in part
Road and its modulator approach.
According to an aspect of the present invention, there is provided a kind of tri-state Boost circuit, including：
Tie point, the second branch road, the 3rd branch road and the 4th branch road, the tie point and second branch circuit parallel connection,
Second branch road is connected with the 3rd branch road, the 4th branch road and the 3rd branch circuit parallel connection；
Wherein, the tie point includes：Electric capacity and rectifying tube, the electric capacity and the rectifying tube are connected；
Second branch road includes：Power switch pipe；
3rd branch road includes：First inductance；
4th branch road includes：Second inductance and two-way switch pipe, second inductance and the two-way switch pipe string
Connection.
Wherein, the two-way switch pipe includes：
First switch pipe and second switch pipe；
Wherein, the source electrode of the first switch pipe is connected and the first switch pipe with the primary side of first inductance
Drain electrode be connected with the secondary side of second inductance；
The source electrode of the second switch pipe is connected with the secondary side of first inductance, the drain electrode of the second switch pipe with
The primary side connection of second inductance.
According to another aspect of the present invention, the present invention provides a kind of modulator approach of tri-state Boost circuit, including：
S1, open the power switch pipe and the two-way switch pipe；
S2, when being zero by the electric current of second inductance, turn off the two-way switch pipe；
S3, when maximum is reached by the electric current of first inductance, turn off the power switch pipe so that the rectification
Pipe is turned on；
S4, the predetermined time when the rectifying tube before conducting is terminated, open the two-way switch pipe；
S5, when the electric current by first inductance is equal to by the electric current of second inductance, turn off the rectification
Pipe, modulation terminates.
Wherein, step S1 includes：
Open the power switch pipe and the two-way switch pipe；
It is determined that the current changing rate and the current changing rate by second inductance that pass through first inductance.
Wherein, step S2 includes：
Based on the first current changing rate calculating formula, it is determined that by the electric current of second inductance；
When being zero by the electric current of second inductance, the two-way switch pipe is turned off.
Wherein, the first current changing rate calculating formula is：
Wherein, iLIt by the electric current of first inductance, t is time, u to beDCFor the voltage source voltage, L are described the
One inductance size, iLrIt is electric current, the L by second inductancerIt is the second inductance size.
Wherein, iLrIt is electric current, the L by second inductancerIt is the second inductance size.
Wherein, step S3 includes：
Based on the second current changing rate calculating formula, it is determined that by the electric current of first inductance；
When maximum is reached by the electric current of first inductance, the power switch pipe is turned off so that the rectifying tube
Conducting.
Wherein, the second current changing rate calculating formula is：
Wherein, uDS4=iL*RDS(on)、uDCIt is the voltage source voltage, u0It is initial voltage, RDSBe (on) conducting resistance,
T is time, iLrIt by the electric current of second inductance, L is the first inductance size, L to berIt is the second inductance size.
Wherein, step S5 includes：
Based on the second current changing rate calculating formula, it is determined that by the electric current of first inductance and by second inductance
Electric current；
When the electric current by second inductance is equal to by the electric current of first inductance, the rectifying tube is turned off,
Modulation terminates.
Wherein, after step S5, also include：
The interval accounting situation of the tri-state Boost circuit is obtained, the interval accounting of the tri-state Boost circuit is：
t2-t0=DcT
t5-t2=DdisT
t0-t5=DfT
DcT+DdisT+DfT=1
Wherein, DcT is first induction charging interval, DdisT is first inductive discharge interval, DfT is described the
One inductance and second inductance inside circulation interval, t0It is step S1 moment, t2It is step S3 moment, t5It is the step S5 moment.
The present invention is improved by the basis of traditional Boost circuit, and provides a kind of tune of tri-state Boost circuit
Method processed, makes inductive current inside afterflow, so as to reduce inductance ripple current, reduces core loss, improves Boost circuit
Efficiency.
Brief description of the drawings
Fig. 1 is a kind of tri-state Boost circuit figure provided in an embodiment of the present invention；
Fig. 2 is a kind of tri-state Boost circuit modulator approach flow chart provided in an embodiment of the present invention；
Fig. 3 is tri-state Boost circuit t provided in an embodiment of the present invention0Moment modulates schematic diagram；
Fig. 4 is tri-state Boost circuit t provided in an embodiment of the present invention1Moment modulates schematic diagram；
Fig. 5 is tri-state Boost circuit t provided in an embodiment of the present invention2Moment modulates schematic diagram；
Fig. 6 is tri-state Boost circuit t provided in an embodiment of the present invention3Moment modulates schematic diagram；
Fig. 7 is tri-state Boost circuit t provided in an embodiment of the present invention4Moment modulates schematic diagram；
Fig. 8 is tri-state Boost circuit t provided in an embodiment of the present invention5Moment modulates schematic diagram；
Fig. 9 is driving and the current waveform schematic diagram of tri-state Boost circuit provided in an embodiment of the present invention；
Figure 10 is operating efficiency schematic diagram data after tri-state Boost circuit provided in an embodiment of the present invention modulation；
Figure 11 is operating efficiency schematic diagram data after traditional Boost circuit modulation provided in an embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
Fig. 1 is a kind of tri-state Boost circuit figure provided in an embodiment of the present invention, including：
Tie point, the second branch road, the 3rd branch road and the 4th branch road, the tie point and second branch circuit parallel connection,
Second branch road is connected with the 3rd branch road, the 4th branch road and the 3rd branch circuit parallel connection；
Wherein, the tie point includes：Electric capacity and rectifying tube, the electric capacity and the rectifying tube are connected；
Second branch road includes：Power switch pipe；
3rd branch road includes：First inductance；
4th branch road includes：Second inductance and two-way switch pipe, second inductance and the two-way switch pipe string
Connection.
Specifically, as shown in figure 1, tie point includes：Output capacitance C0With power MOSFET tube Q2, the output capacitance
C0With power MOSFET tube Q2Series connection, wherein, the power MOSFET tube Q2As described rectifying tube；
Second branch road includes：Power MOSFET tube Q1, the power MOSFET tube Q1As described power switch pipe；
3rd branch road includes：Main inductance L, the main inductance L are first inductance；
4th branch road includes：Auxiliary induction Lr, power MOSFET tube Qr1And power MOSFET tube Qr2, the auxiliary induction Lr
As described second inductance, the power MOSFET tube Qr1With power MOSFET tube Qr2As described two-way switch pipe.
It should be noted that tri-state Boost circuit is due to main inductance L and auxiliary induction LrInside circulation, relative to biography
The Boost circuit pattern of system, increased a control freedom degree, therefore when can change the inside circulation of tri-state Boost circuit
Between, circuit is controlled.
The embodiment of the present invention is improved by Boost circuit topology, introduces the inside circulation of tri-state Boost circuit
Time makes inductive current inside afterflow, so as to reduce inductance ripple current, reduces inductance core loss, improves Boost circuit work
Make efficiency.
On the basis of embodiment described in Fig. 1, the two-way switch pipe includes：
First switch pipe and second switch pipe；
Wherein, the source electrode of the first switch pipe is connected and the first switch pipe with the primary side of first inductance
Drain electrode be connected with the secondary side of second inductance；
The source electrode of the second switch pipe is connected with the secondary side of first inductance, the drain electrode of the second switch pipe with
The primary side connection of second inductance.
Specifically, the first switch pipe is embodied in power MOSFET tube Qr1, the second switch pipe specific manifestation
It is power MOSFET tube Qr2, the power MOSFET tube Qr1Source electrode be connected and described with the primary side of the main inductance L
MOSFET pipes Qr1Drain electrode and the auxiliary induction LrSecondary side connection；
The power MOSFET tube Qr2Source electrode be connected with the secondary side of the main inductance L, the power MOSFET tube Qr2
Drain electrode and the auxiliary induction LrPrimary side connection.
On the basis of embodiment described in Fig. 1, Fig. 2 is a kind of tri-state Boost circuit modulation provided in an embodiment of the present invention
Method, including S1 to S5：
S1, open the power switch pipe and the two-way switch pipe；
S2, when being zero by the electric current of second inductance, turn off the two-way switch pipe；
S3, when maximum is reached by the electric current of first inductance, turn off the power switch pipe so that the rectification
Pipe is turned on；
S4, the predetermined time when the rectifying tube before conducting is terminated, open the two-way switch pipe；
S5, when the electric current by first inductance is equal to by the electric current of second inductance, turn off the rectification
Pipe, modulation terminates.
In S1, as shown in figure 3, Fig. 3 is tri-state Boost circuit t provided in an embodiment of the present invention0Moment modulates schematic diagram,
In default t0At the moment, open power switch pipe Q1, power MOSFET tube Qr1And power MOSFET tube Qr2So that main inductance L because
The electric current for bearing forward voltage and passing through main inductance L starts to increase, auxiliary induction LrBecause bearing negative voltage, by auxiliary induction
Electric current LrElectric current start reduce.
In S2, as shown in figure 4, Fig. 4 is tri-state Boost circuit t provided in an embodiment of the present invention1Moment modulates schematic diagram,
As the electric current L by auxiliary inductionrWhen being reduced to 0, switch-off power MOSFET pipes Qr1And power MOSFET tube Qr2, now the moment be
t1So that only main inductance L electric currents under forward voltage effect increase, and store energy, and circuit is opened into common Boost circuit master
Close stage is closed, keeps constant by the current changing rate of main inductance L.
In S3, as shown in figure 5, Fig. 5 is tri-state Boost circuit t provided in an embodiment of the present invention2Moment modulates schematic diagram,
When reaching maximum, switch-off power switching tube Q by the electric current of main inductance L1, now the moment is t2So that synchronous rectifier Q2's
Body diode afterflow, Q2Pipe both end voltage is dropped to close to 0V, as shown in fig. 6, Fig. 6 is tri-state provided in an embodiment of the present invention
Boost circuit t3Moment modulates schematic diagram, t3Timing synchronization rectifying tube Q2Conducting.
In S4, as shown in fig. 7, Fig. 7 is tri-state Boost circuit t provided in an embodiment of the present invention4Moment modulates schematic diagram,
As synchronous rectifier Q2Conducting, main inductance L is being preset because bearing backward voltage so that being gradually reduced by the electric current of main inductance L
T4At the moment, open power MOSFET tube Qr1And power MOSFET tube Qr2So that auxiliary induction LrLead to because bearing forward voltage
Cross auxiliary induction LrElectric current rise, and pass through main inductance L electric current continue decline.
In S5, as shown in figure 8, Fig. 8 is tri-state Boost circuit t provided in an embodiment of the present invention5Moment modulates schematic diagram,
When by auxiliary induction LrElectric current be equal to during by the electric current of main inductance L, input is reversely flowed into order to avoid output current straight
Stream voltage source DC, shut-off synchronous rectifier Q2, i.e. synchronous rectifier Q2Body diode without reverse recovery loss, realize zero electricity
Stream shut-off.
A kind of modulator approach of tri-state Boost circuit is the embodiment of the invention provides, by modulating tri-state Boost circuit
Internal circulation time so that inductive current inside afterflow, so as to reduce inductance ripple current, under making synchronous rectification tube current nature
Turned off after dropping to zero, eliminate reverse recovery loss.
On the basis of embodiment described in Fig. 2, step S1 includes：
Open the power switch pipe and the two-way switch pipe；
It is determined that the current changing rate and the current changing rate by second inductance that pass through first inductance.
On the basis of embodiment described in Fig. 2, step S2 includes：
Based on the first current changing rate calculating formula, it is determined that by the electric current of second inductance；
When being zero by the electric current of second inductance, the two-way switch pipe is turned off.
On the basis of above-described embodiment, the first current changing rate calculating formula is：
Wherein, iLIt by the electric current of first inductance, t is time, u to beDCFor the voltage source voltage, L are described the
One inductance size, iLrIt is electric current, the L by second inductancerIt is the second inductance size.
On the basis of embodiment described in Fig. 2, step S3 includes：
Based on the second current changing rate calculating formula, it is determined that by the electric current of first inductance；
When maximum is reached by the electric current of first inductance, the power switch pipe is turned off so that the rectifying tube
Conducting.
The body diode conducting of the rectifying tube, the voltage of the rectifying tube is 0.
It should be noted that the synchronous rectifier Q2Body diode conducting, the voltage of synchronous rectifier is 0 this section
Time is extremely short, is to prevent power switch pipe Q1With synchronous rectifier Q2Shoot through and the Dead Time that adds.
The embodiment of the present invention by adding Dead Time, so as to prevent power switch pipe Q1With synchronous rectifier Q2It is straight-through short
Road, increased the stability of tri-state Boost circuit modulation.
On the basis of embodiment described in Fig. 2, the second current changing rate calculating formula is：
Wherein, uDS4=iL*RDS(on)、uDCIt is the voltage source voltage, u0It is initial voltage, RDSBe (on) conducting resistance,
T is time, iLrIt by the electric current of second inductance, L is the first inductance size, L to berIt is the second inductance size.
On the basis of embodiment described in Fig. 2, step S5 includes：
Based on the second current changing rate calculating formula, it is determined that by the electric current of first inductance and by second inductance
Electric current；
When the electric current by second inductance is equal to by the electric current of first inductance, the rectifying tube is turned off,
Modulation terminates.
Specifically, after modulation terminates, by auxiliary induction LrElectric current with by the electric current of main inductance L in power MOSFET
Pipe Qr1With power MOSFET tube Qr2Middle formation inside circulation, due to Qr1With Qr2Channel resistance it is minimum, so pass through auxiliary induction
LrElectric current be basically unchanged with by the electric current of main inductance L, main inductance L and auxiliary induction LrBoth end voltage sum close to 0.
On the basis of embodiment described in Fig. 2, after step S5, also include：
The interval accounting situation of the tri-state Boost circuit is obtained, the interval accounting of the tri-state Boost circuit is：
t2-t0=DcT
t5-t2=DdisT
t0-t5=DfT
DcT+DdisT+DfT=1
Wherein, DcT is first induction charging interval, DdisT is first inductive discharge interval, DfT is described the
One inductance and second inductance inside circulation interval, t0It is step S1 moment, t2It is step S3 moment, t5It is the step S5 moment.
It should be noted that compared to traditional Boost circuit, tri-state Boost circuit is due to increased auxiliary induction Lr、
Power MOSFET tube Qr1With power MOSFET tube Qr2The two-way switch pipe of composition, in stable state, the work period, (duration T) was divided into
Three main interval, i.e. main inductance L chargings interval DcT, main inductance L discharge ranges DdisT, main inductance L and auxiliary induction LrCirculation
Interval DfT.During main inductance L electric current circulation, electric current is in main inductance L, power MOSFET tube Qr1, power MOSFET tube Qr2With it is auxiliary
Help inductance LrMiddle circulation, power switch pipe Q1, synchronous rectifier Q2It is turned off, power MOSFET tube Qr1, power MOSFET tube Qr2
It is open-minded.Ignore Dead Time and switching transients process, interval accounting meets following formula：
t2-t0=DcT
t5-t2=DdisT
t0-t5=DfT
DcT+DdisT+DfT=1
Wherein, t0It is step S1 moment, t2It is step S3 moment, t5It is the step S5 moment.
It is understood that due to DdisT is constant, therefore can avoid the rapid of traditional Boost circuit monocycle output energy
Become, the negative tune of output voltage hyperharmonic is less prone to.
Specifically, if voltage source nominal input voltage is 30V, rated output voltage is 50V, and frequency is 50kHz, main inductance
L selections are 42 μ H, auxiliary induction LrIt is 2 μ H, output capacitance C0It is 80 μ F, resistive load is 10 Ω, and main inductance L discharge times are controlled
It is made as constant duty ratio DdisT is equal to 0.3, tri-state Boost circuit is modulated according to the drive waveforms figure shown in Fig. 9, Fig. 9
It is the drive waveforms schematic diagram of tri-state Boost circuit, the core loss of inductance is calculated according to formula：
P=Kfe0fαΔBβV
Wherein, Kfe0For material coefficient, α ≈ 1.2-1.7, β ≈ 2.6-2.8, B are magnetic induction intensity.
As shown in Figure 10, traditional Boost circuit modulation behind efficiency is as schemed for tri-state Boost circuit efficiency by inputoutput test after modulation
Shown in 11, contrast can be obtained, and the efficiency after the modulation of tri-state Boost circuit is better than traditional Boost circuit modulation behind efficiency.
The embodiment of the present invention by increasing the inside circulation time of tri-state Boost circuit, so as to reduce current ripples so that
The efficiency of the reduction of magnetic induction intensity variable quantity, core loss reduction, and the tri-state Boost circuit after similarity condition modulated
It is better than traditional Boost circuit.
Finally, the present processes are only preferably embodiment, are not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc. should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of tri-state Boost circuit, it is characterised in that including：
Tie point, the second branch road, the 3rd branch road and the 4th branch road, the tie point and second branch circuit parallel connection, it is described
Second branch road is connected with the 3rd branch road, the 4th branch road and the 3rd branch circuit parallel connection；
Wherein, the tie point includes：Electric capacity and rectifying tube, the electric capacity and the rectifying tube are connected；
Second branch road includes：Power switch pipe；
3rd branch road includes：First inductance；
4th branch road includes：Second inductance and two-way switch pipe, second inductance and the two-way switch pipe are connected.
2. circuit according to claim 1, it is characterised in that the two-way switch pipe includes：
First switch pipe and second switch pipe；
Wherein, the source electrode of the first switch pipe be connected with the primary side of first inductance and the first switch pipe leakage
Pole is connected with the secondary side of second inductance；
The source electrode of the second switch pipe is connected with the secondary side of first inductance, the drain electrode of the second switch pipe with it is described
The primary side connection of the second inductance.
3. the modulator approach of a kind of a kind of tri-state Boost circuit according to claim 1 or 2, it is characterised in that including：
S1, open the power switch pipe and the two-way switch pipe；
S2, when being zero by the electric current of second inductance, turn off the two-way switch pipe；
S3, when maximum is reached by the electric current of first inductance, turn off the power switch pipe so that the rectifying tube is led
It is logical；
S4, the predetermined time when the rectifying tube before conducting is terminated, open the two-way switch pipe；
S5, when the electric current by first inductance is equal to by the electric current of second inductance, turn off the rectifying tube, adjust
System terminates.
4. method according to claim 3, it is characterised in that step S1 includes：
Open the power switch pipe and the two-way switch pipe；
It is determined that the current changing rate and the current changing rate by second inductance that pass through first inductance.
5. method according to claim 3, it is characterised in that step S2 includes：
Based on the first current changing rate calculating formula, it is determined that by the electric current of second inductance；
When being zero by the electric current of second inductance, the two-way switch pipe is turned off.
6. method according to claim 5, it is characterised in that the first current changing rate calculating formula is：
Wherein, iLIt by the electric current of first inductance, t is time, u to beDCFor the voltage source voltage, L are the described first electricity
Sense size, iLrIt is electric current, the L by second inductancerIt is the second inductance size.
7. method according to claim 3, it is characterised in that step S3 includes：
Based on the second current changing rate calculating formula, it is determined that by the electric current of first inductance；
When maximum is reached by the electric current of first inductance, the power switch pipe is turned off so that the rectifying tube conducting.
8. method according to claim 7, it is characterised in that the second current changing rate calculating formula is：
Wherein, uDS4=iL*RDS(on)、uDCIt is the voltage source voltage, u0It is initial voltage, RDS(on) for conducting resistance, t are
Time, iLrIt by the electric current of second inductance, L is the first inductance size, L to berIt is the second inductance size.
9. method according to claim 8, it is characterised in that step S5 includes：
Based on the second current changing rate calculating formula, it is determined that the electric current and the electricity by second inductance that pass through first inductance
Stream；
When the electric current by second inductance is equal to by the electric current of first inductance, the rectifying tube, modulation are turned off
Terminate.
10. method according to claim 9, it is characterised in that after step S5, also include：
The interval accounting situation of the tri-state Boost circuit is obtained, the interval accounting of the tri-state Boost circuit is：
t2-t0=DcT
t5-t2=DdisT
t0-t5=DfT
DcT+DdisT+DfT=1
Wherein, DcT is first induction charging interval, DdisT is first inductive discharge interval, DfT is the described first electricity
Sense and second inductance inside circulation interval, t0It is step S1 moment, t2It is step S3 moment, t5It is the step S5 moment.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103269160A (en) * | 2013-05-29 | 2013-08-28 | 盐城工学院 | Three-state direct current-direct current converter and control method thereof |
| CN104578773A (en) * | 2014-12-30 | 2015-04-29 | 西安理工大学 | Soft switching circuit for bidirectional DC/DC (direct current/direct current) converter and control method |
| CN106208698A (en) * | 2016-08-09 | 2016-12-07 | 中南大学 | It is provided with four switch Buck Boost circuit and control methods thereof of Sofe Switch |
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2017
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103269160A (en) * | 2013-05-29 | 2013-08-28 | 盐城工学院 | Three-state direct current-direct current converter and control method thereof |
| CN104578773A (en) * | 2014-12-30 | 2015-04-29 | 西安理工大学 | Soft switching circuit for bidirectional DC/DC (direct current/direct current) converter and control method |
| CN106208698A (en) * | 2016-08-09 | 2016-12-07 | 中南大学 | It is provided with four switch Buck Boost circuit and control methods thereof of Sofe Switch |
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