CN106877174A - Three rank distributed feed-back Terahertz quantum cascaded laser structures and preparation method thereof - Google Patents
Three rank distributed feed-back Terahertz quantum cascaded laser structures and preparation method thereof Download PDFInfo
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- CN106877174A CN106877174A CN201710277857.1A CN201710277857A CN106877174A CN 106877174 A CN106877174 A CN 106877174A CN 201710277857 A CN201710277857 A CN 201710277857A CN 106877174 A CN106877174 A CN 106877174A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
The present invention provides a kind of three ranks distributed feed-back Terahertz quantum cascaded laser structure and preparation method thereof, and the structure includes substrate, ridge waveguide area and three rank optical grating constructions；The ridge waveguide area includes bottom electrode, interlayer area and Top electrode successively from bottom to top；The interlayer area includes lower contact layer, active area and upper contact layer successively from bottom to top；The three ranks optical grating construction includes some parallel slits in periodic arrangement, and Top electrode and interlayer area are run through in the gap up and down；Longitudinal duty cycle range of the three ranks optical grating construction is 8% 15%；THz wave is produced in active area, and the modeling effect for passing through three rank optical grating constructions, and longitudinal two ends in ridge waveguide area are coupled in the outgoing from gap in space.The present invention introduces three rank gratings in the waveguiding structure of Terahertz quantum cascaded laser, and smaller far-field divergence angle is obtained by adjusting different grating dutycycles, overcome the far-field divergence angle of three rank gratings presence because phase is mismatched problem bigger than normal.
Description
Technical field
The invention belongs to semiconductor laser field, it is related to a kind of Terahertz quantum cascaded laser of three ranks distributed feed-back
Device structure and preparation method thereof.
Background technology
Terahertz (THz) QCL (Quantum Cascade Laser, QCL) covers the frequency of 1-10Thz
Scope, has the advantages that small volume, lightweight, easy of integration, is a highly important radiation source of Terahertz application field.For
The application catered in fields such as communication, imaging, spectrum analyses sets, it is necessary to be optimized to THz QCL in terms of waveguiding structure
Meter, makes THz QCL have the performances such as single-mode output, low far-field divergence angle, power output high.
Mainly there are two kinds of waveguiding structures, semi-insulating surface plasmon waveguide structure and dual-surface metal waveguide structure at present.
Compared to semi-insulating surface plasmon waveguide structure, dual-surface metal waveguide structure has that pattern restriction factor is high, operating temperature is high
Advantage, but have the disadvantage that diverging is compared in multimode operation, far field.It is smaller in order to have while single-mode output is obtained
Far-field divergence angle, generally introduces optical grating construction in dual-surface metal waveguide.For three rank distributed feed-back THz QCL, by coupled mode
Knowable to theory, eigen mode is enabled to meet phase matched bar when the corresponding effective refractive index of the eigen mode of waveguiding structure is 3
Part, obtains more satisfactory far-field spot.The corresponding effective refractive indexs of three rank distributed feed-back THz QCL for generally making are more than 3,
The maximum screen periods number for having relatively good far-field divergence angle due to causing device is N=neff/(neff- 3), wherein neffIt is device
The corresponding effective refractive index of part eigen mode so that three rank screen periods numbers are more than many THz QCL of maximum screen periods number N
Far-field spot it is poor.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of three ranks distributed feed-back Terahertz
Quantum cascade laser structure and preparation method thereof, for solving, three rank distributed feed-backs in the prior art are Terahertz quantum cascaded to swash
There is phase mismatch in light device, cause far-field divergence angle bigger than normal, the poor problem of far-field spot.
In order to achieve the above objects and other related objects, a kind of three ranks distributed feed-back of present invention offer is Terahertz quantum cascaded
Laser structure, including substrate, the ridge waveguide area being formed on the substrate and three ranks being formed in the ridge waveguide area
Optical grating construction；Wherein：
The ridge waveguide area includes bottom electrode, interlayer area and Top electrode successively from bottom to top；
The interlayer area includes lower contact layer, active area and upper contact layer successively from bottom to top；
The three ranks optical grating construction includes some parallel slits in periodic arrangement, and the gap is run through on described up and down
Electrode and the interlayer area；In the ridge waveguide area, longitudinal duty cycle range of the three ranks optical grating construction is 8%-15%；
THz wave is produced in the active area, and the modeling effect for passing through the three ranks optical grating construction, from the seam
Outgoing at gap, is coupled to longitudinal two ends in the ridge waveguide area in space.
Alternatively, the substrate includes N-shaped GaAs substrates.
Alternatively, doped with Si in the N-shaped GaAs substrates, wherein, Si doping concentration scopes are 2 × 1018~5 ×
1018cm-3。
Alternatively, the thickness range of the substrate is 100~240 μm.
Alternatively, transverse width of the transverse width of the Top electrode less than the active area.
Alternatively, the Top electrode is located at the center of the active area upper surface, and the transverse width of the Top electrode is
The 50%~95% of the transverse width of the active area.
Alternatively, the transverse width of the active area is sub-wavelength dimensions.
Alternatively, the transverse width in the gap is the 50%~95% of the transverse width of the Top electrode.
Alternatively, the Top electrode is longitudinally wide longitudinally wide less than the active area.
Alternatively, the distance between longitudinal first end of the Top electrode and the active area longitudinal direction first end for 50~
150μm；Longitudinally the distance between second end is 50~150 μm with the active area at longitudinally second end of the Top electrode.
The present invention also provides a kind of preparation method of three ranks distributed feed-back Terahertz quantum cascaded laser structure, including such as
Lower step：
S1：One substrate is provided, sequentially form from bottom to top on the substrate etching barrier layer, upper contact layer, active area,
Lower contact layer and the first bonding metal layer；
S2：A substrate is provided, surface forms the second bonding metal layer over the substrate；
S3：By first bonding metal layer and the second bonding metal layer by the substrate and the substrate bonding；Institute
State the first bonding metal layer and the second bonding metal layer collectively forms bottom electrode；
S4：The thinning substrate, and the substrate and the etching barrier layer are removed, the upper contact layer is thinned to pre-
If thickness；Then layer surface is contacted on described and forms Top electrode；Wherein, the lower contact layer, active area and upper contact layer structure
Into interlayer area, the bottom electrode, interlayer area and Top electrode constitute ridge waveguide area；
S5：The ridge waveguide area is etched, three rank optical grating constructions are formed in the ridge waveguide area, wherein, the three ranks light
Grid structure includes some parallel slits in periodic arrangement, and the Top electrode and the interlayer area are run through in the gap up and down.
Alternatively, in the step S5, a hard mask layer is formed on ridge waveguide area surface first, then described
The opening corresponding with the three ranks optical grating construction is formed in hard mask layer, then the ridge waveguide area is carried out by the opening
Etching, obtains the gap.
Alternatively, first bonding metal layer and the second bonding metal layer include Ti/Au composite beds.
Alternatively, also including step S6：The substrate surface after thinning forms backplate.
Alternatively, also including step S7：Will dissociate laser tube core, by indium sheet be welded on copper it is heat sink on, using gold
Wire bond line realizes electrical pumping.
As described above, three ranks distributed feed-back Terahertz quantum cascaded laser structure of the invention and preparation method thereof, tool
There is following beneficial effect：The present invention introduces three rank gratings in the waveguiding structure of Terahertz quantum cascaded laser, and passes through
Different grating dutycycles are adjusted to obtain smaller far-field divergence angle.Improved by the regulation of the dutycycle to three rank gratings
The effective refractive index of grating waveguide overcomes the remote of three rank gratings presence because phase is mismatched to meet phase-matching condition
Field angle of divergence problem bigger than normal, the periodicity of grating can be increased the Gaussian spot less than 15 ° × 15 ° is obtained simultaneously, and is increased
Plus the periodicity of grating is obtained in that than larger coupled power.
Brief description of the drawings
Fig. 1 a are shown as the generalized section of three ranks distributed feed-back Terahertz quantum cascaded laser structure of the invention.
Fig. 1 b are shown as the schematic three dimensional views of three ranks distributed feed-back Terahertz quantum cascaded laser structure of the invention.
Fig. 2 a- Fig. 2 e are shown as three rank DFB THz QCL far fields result of calculations of different longitudinal dutycycle gratings.
Fig. 2 f are shown as the situation of change of Cycle Length corresponding with Fig. 2 a- Fig. 2 e and modal loss.
Fig. 3 a are shown as the modal loss figure of device A, and wherein its resonant frequency is 4.1702THz.
Fig. 3 b are shown as Ey distributions of the device A in the corresponding chambers of resonant frequency 4.1702THz.
Fig. 4 is shown as the ESEM of three rank distributed feed-back Terahertz quantum cascaded laser structures of present invention making
Figure, wherein the one of bottom are device A.
Fig. 5 is shown as the far-field spot figure of the device A for measuring.
Component label instructions
1 substrate
2 bottom electrodes
3 times contact layers
4 active areas
Contact layer on 5
6 Top electrodes
7 three rank optical grating constructions
8 gold thread bonding regions
9 absorb border area
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages of the invention and effect easily.The present invention can also be by specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Refer to Fig. 1 to Fig. 5.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with relevant component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random change during its actual implementation, and its
Assembly layout kenel is likely to increasingly complex.
Embodiment one
In order to solve the unmatched problem of phase of three rank distributed feed-back Terahertz quantum cascaded lasers presence, the present invention
By changing the structure of waveguide, propose that a kind of Terahertz quantum cascaded laser that power output is high, far-field divergence angle is small makes
Scheme.Fig. 1 a and Fig. 1 b are referred to, three ranks distributed feed-back Terahertz quantum cascaded laser structure of the invention is respectively indicated as
Generalized section and schematic three dimensional views, including substrate 1, the ridge waveguide area that is formed on the substrate 1 and be formed at described
Three rank optical grating constructions 7 in ridge waveguide area；Wherein：
The ridge waveguide area includes bottom electrode 2, interlayer area and Top electrode 6 successively from bottom to top；
The interlayer area includes lower contact layer 3, active area 4 and upper contact layer 5 successively from bottom to top；
The three ranks optical grating construction 7 includes some parallel slits in periodic arrangement, and the gap is up and down through described
Top electrode 2 and the interlayer area；In the ridge waveguide area, longitudinal duty cycle range of the three ranks optical grating construction 7 is 8%-
15%；
THz wave is produced in the active area, and the modeling effect for passing through the three ranks optical grating construction 7, from the seam
Outgoing at gap, is coupled to longitudinal two ends in the ridge waveguide area in space.
Specifically, one-level, second-order diffraction that the THz wave produced in the active area 4 is produced in ridge waveguide area are from light
It is coupled out in grid, three order diffractions provide negative-feedback.The electromagnetic wave being coupled out forms low diverging at the two ends of waveguide longitudinal direction
Far-field spot.
It is pointed out that " longitudinal direction " refers to that, along the ridge extending direction of ridge waveguide, " transverse direction " refers in level in the present invention
The direction vertical with " longitudinal direction " on face.A plurality of gap in the three ranks optical grating construction 7 is parallel with " transverse direction ".
As an example, the substrate 1 includes N-shaped GaAs substrates, the lower contact layer 3 is highly doped n-type GaAs layers, described
Active area 4 is that GaAs MQWs cascade active area, and the upper contact layer 5 is highly doped n-type GaAs layers.
Specifically, the thickness range of the substrate 1 is 100~240 μm.In the present embodiment, the thickness of the N-shaped GaAs substrates
Degree is preferably 150 μm.Radiating when relatively thin substrate can be conducive to device to work, improves device operating temperature.
Specifically, doped with Si in the N-shaped GaAs substrates, wherein, Si doping concentration scopes are 2 × 1018~5 ×
1018cm-3, preferably 2 × 1018cm-1.The main purpose of Si doping is the substrate 1 is formed with the Top electrode of its top sputtering
Ohmic contact.
Specifically, transverse width of the transverse width of the Top electrode 6 less than the active area 4, the Top electrode 6 it is vertical
It is longitudinally wide less than the active area 4 to width.As an example, the Top electrode 6 is located in the upper surface of the active area 4
The heart, and the Top electrode 6 transverse width be the active area 4 transverse width 50%~95%, the Top electrode 6 it is vertical
It is 50~150 μm to the distance between longitudinal first end of first end and the active area 4, second end of longitudinal direction of the Top electrode 6
Longitudinally the distance between second end is 50~150 μm with the active area 4.In the present embodiment, the transverse width of the active area 4
It is sub-wavelength dimensions, the ratio that the width of the Top electrode 6 is preferably the width for occupying source region is 80%, ridge waveguide area upper table
100 μm are respectively stayed not covered by the Top electrode 6 in face longitudinal direction two ends.Herein, sub-wavelength dimensions refer to and are equal to or slightly less than to swash
The wavelength of the THz wave that light device is produced.
Wherein, the area that ridge waveguide area upper surface longitudinal direction two ends and both lateral sides two ends are not covered by the Top electrode 6
Domain is used as absorbing border area 9, the generation for suppressing higher order mode.
Specifically, in the three ranks optical grating construction 7, the transverse width in the gap is the transverse width of the Top electrode 6
50%~95%.
In order to determine the specific dutycycle of grating, be according to specific periodicity to device architecture Comsol software modelings
Emulation, magnetic distribution data of the eigen mode that will be calculated at grating gap carry out near-far with Matlab softwares
Convert and obtain the corresponding far-field distribution figure of different grating dutycycles.
As an example, Fig. 2 a- Fig. 2 e are shown as different longitudinal dutycycles (respectively 8%, 10%, 12%, 13%, 15%)
Three rank DFB THz QCL far fields result of calculations of grating, its abscissa Phi represents far-field spot in the horizontal angle of divergence of waveguide,
Ordinate Theta represents the angle of divergence of the far-field spot in waveguide longitudinal direction；Fig. 2 f are shown as Cycle Length corresponding with Fig. 2 a- Fig. 2 e
With the situation of change of modal loss.In the present embodiment, the relatively good waveguide of selection far-field spot pattern (as shown in Figure 5) is corresponding
Grating dutycycle is applied on device design and fabrication.
As an example, making devices A, wherein, device A ridge waveguides area overall width is 187.5 μm, and Top electrode width is 150 μ
M, is 12% for the grating dutycycle that device A chooses, and the width of grating is 120 μm, and the Cycle Length of grating is 32.7 μm,
Ridge waveguide area has 33 cycles altogether, and ridge waveguide goes to longitudinal two ends to have two Fabry Perots of Cycle Length (F-P) per side in addition
Alveolus is used as gold thread bonding region 8, for gold thread bonding.
Fig. 3 (a) is the modal loss figure of device A, can be 4.1702THz in the hope of its resonant frequency, and corresponding pattern is damaged
Consumption is minimum, and Fig. 3 (b) is the Ey distributions in the corresponding chamber of resonant frequency of device A, and its abscissa X represents the coordinate of waveguide longitudinal direction,
Ordinate Z represents the horizontal coordinate of waveguide.
Three ranks distributed feed-back Terahertz quantum cascaded laser structure of the invention can make laser resonator frequency correspondence
Effective refractive index close to even equal to 3, meet phase-matching condition, increase the periodicity of three rank gratings, while being compared
Preferable far-field spot.
Embodiment two
The present invention also provides a kind of preparation method of three ranks distributed feed-back Terahertz quantum cascaded laser structure, including such as
Lower step：
Step S1 is first carried out：One substrate is provided, sequentially form from bottom to top on the substrate etching barrier layer, on connect
Contact layer, active area, lower contact layer and the first bonding metal layer.
As an example, the step S1 includes：
S1-1：With Semi-insulating GaAs wafer as substrate, grown on the substrate about using molecular beam epitaxy (MBE)
The Al of 400 nanometer thickness0.5Ga0.5As etching barrier layers；
S1-2：MBE grows contact layer on the highly doped n-type GaAs of about 400 nanometer thickness on the etching barrier layer, its work
With being metal and GaAs is formed unalloyed Ohmic contact；
S1-3：The MBE growths AlGaAs/GaAs alternate multiple periodic structure active areas on the contact layer, thickness is about
10 microns；
S1-4：MBE grows contact layer under about 50 nanometers of highly doped n-type GaAs on the active area；
S1-5：The bonding metal layer of magnetron sputtering first on the lower contact layer.
Then step S2 is performed：A substrate is provided, surface forms the second bonding metal layer over the substrate.
Specifically, using highly doped n-type GaAs wafers as substrate, in the highly doped n-type GaAs substrate top surface magnetic
Control the second bonding metal layer of sputtering.In the present embodiment, first bonding metal layer and the second bonding metal layer include Ti/Au
Composite bed.As an example, in the Ti/Au composite beds, Ti thickness degree is about 20nm, Au thickness degree is about 500nm.
Then step S3 is performed：By first bonding metal layer and the second bonding metal layer by the substrate with it is described
Substrate bonding；First bonding metal layer and the second bonding metal layer collectively form bottom electrode.
Specifically, carrying out Au-Au bonding chips at high temperature under high pressure, this technology is well known to those skilled in the art, this
Place repeats no more.
Then step S4 is performed again：The thinning substrate, and the substrate and the etching barrier layer are removed, on described
Contact layer is thinned to preset thickness；Then layer surface is contacted on described and forms Top electrode；Wherein, the lower contact layer, active
Area and upper contact layer constitute interlayer area, and the bottom electrode, interlayer area and Top electrode constitute ridge waveguide area.
As an example, carrying out mechanical reduction and wet etching removal Semi-insulating GaAs base by the wafer material after para-linkage
Plate, 10s cleans up etching barrier layer in being then immersed in the hydrofluoric acid of 40% concentration (HF) solution, then uses H3PO4:
H2O2:H2O is 1:1:Upper contact layer is thinned to 200nm by 25 solution from 400nm.Then photoetching, electron beam evaporation, stripping are passed through
From etc. step make Ti/Au (20/350nm) Top electrode.
Then step S5 is performed again：The ridge waveguide area is etched, three rank optical grating constructions are formed in the ridge waveguide area, its
In, the three ranks optical grating construction includes some parallel slits in periodic arrangement, and the Top electrode is run through in the gap up and down
And the interlayer area.
Specifically, forming a hard mask layer on ridge waveguide area surface first, then formed in the hard mask layer
The opening corresponding with the three ranks optical grating construction, then the ridge waveguide area is performed etching by the opening, obtain described
Gap.
As an example, growing at a temperature of 120 DEG C one layer 1.5 μm of Si by ICPCVD methods3N4Dry etching is done to cover firmly
Film layer.Whole ridge waveguide area part is protected with photoresist by photoetching, wafer is put into RIE machines to Si3N4Windowing
Mouthful, etching gas include CF4, then wafer is put into ICP etching machines (Oxford 180) and realizes GaAs semiconductor etchings, do
The gas of method etching uses Cl2And Ar2, in order to obtain the side wall of relative smooth, selective etching temperature is 45 DEG C.In order to improve device
The thermal characteristics of part, using the method for mechanical lapping by N-shaped GaAs substrate thinnings to 150 μm.
Further, also including step S6：The substrate surface after thinning forms backplate.As an example, adopting
With magnetron sputtering backplate (Ti/Au, 20/200nm).
Further, also including step S7：The laser tube core that will be dissociated, by indium sheet be welded on copper it is heat sink on, and adopt
Electrical pumping is realized with spun gold bonding wire.Copper is heat sink can to help laser to radiate.
As shown in figure 4, being shown as sweeping for three rank distributed feed-back Terahertz quantum cascaded laser structures of present invention making
Electron microscope is retouched, wherein the one of bottom is device A, and the far-field pattern of its test is Fig. 5, and measuring its far-field divergence angle size is
14.5°×13.5°.It can be seen that, the far-field divergence angle existed because phase is mismatched instant invention overcomes three rank gratings is bigger than normal
Problem.
In sum, the present invention introduces three rank gratings in the waveguiding structure of Terahertz quantum cascaded laser, and leads to
Cross and adjust different grating dutycycles to obtain smaller far-field divergence angle.Changed by the regulation of the dutycycle to three rank gratings
The effective refractive index of kind grating waveguide overcomes what three rank gratings existed because phase is mismatched to meet phase-matching condition
Far-field divergence angle problem bigger than normal, the periodicity of grating can be increased the Gaussian spot less than 15 ° × 15 ° is obtained simultaneously.Institute
So that the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should be covered by claim of the invention.
Claims (15)
1. a kind of three ranks distributed feed-back Terahertz quantum cascaded laser structure, it is characterised in that including substrate, be formed at it is described
Ridge waveguide area on substrate and three rank optical grating constructions being formed in the ridge waveguide area；Wherein：
The ridge waveguide area includes bottom electrode, interlayer area and Top electrode successively from bottom to top；
The interlayer area includes lower contact layer, active area and upper contact layer successively from bottom to top；
The three ranks optical grating construction includes some parallel slits in periodic arrangement, and the Top electrode is run through in the gap up and down
And the interlayer area；In the ridge waveguide area, longitudinal duty cycle range of the three ranks optical grating construction is 8%-15%；
THz wave is produced in the active area, and the modeling effect for passing through the three ranks optical grating construction, from the gap
Outgoing, is coupled to longitudinal two ends in the ridge waveguide area in space.
2. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
Substrate includes N-shaped GaAs substrates.
3. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 2, it is characterised in that：It is described
Doped with Si in N-shaped GaAs substrates, wherein, Si doping concentration scopes are 2 × 1018~5 × 1018cm-3。
4. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
The thickness range of substrate is 100~240 μm.
5. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
Transverse width of the transverse width of Top electrode less than the active area.
6. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 5, it is characterised in that：It is described
Top electrode be located at the active area upper surface center, and the Top electrode transverse width be the active area transverse width
50%~95%.
7. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
The transverse width of active area is sub-wavelength dimensions.
8. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
The transverse width in gap is the 50%~95% of the transverse width of the Top electrode.
9. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 1, it is characterised in that：It is described
Top electrode it is longitudinally wide longitudinally wide less than the active area.
10. three ranks distributed feed-back Terahertz quantum cascaded laser structure according to claim 9, it is characterised in that：Institute
The distance between longitudinal first end of Top electrode and active area longitudinal direction first end are stated for 50~150 μm；The Top electrode
Longitudinally the distance between second end is 50~150 μm with the active area at longitudinal direction the second end.
11. a kind of preparation methods of three ranks distributed feed-back Terahertz quantum cascaded laser structure, it is characterised in that including as follows
Step：
S1：One substrate is provided, sequentially form from bottom to top on the substrate etching barrier layer, upper contact layer, active area, under connect
Contact layer and the first bonding metal layer；
S2：A substrate is provided, surface forms the second bonding metal layer over the substrate；
S3：By first bonding metal layer and the second bonding metal layer by the substrate and the substrate bonding；Described
One bonding metal layer and the second bonding metal layer collectively form bottom electrode；
S4：The thinning substrate, and the substrate and the etching barrier layer are removed, the upper contact layer is thinned to default thickness
Degree；Then layer surface is contacted on described and forms Top electrode；Wherein, the lower contact layer, active area and upper contact layer constitute folder
Floor area, the bottom electrode, interlayer area and Top electrode constitute ridge waveguide area；
S5：The ridge waveguide area is etched, three rank optical grating constructions are formed in the ridge waveguide area, wherein, the three ranks grating knot
Structure includes some parallel slits in periodic arrangement, and the Top electrode and the interlayer area are run through in the gap up and down.
The preparation method of 12. three ranks distributed feed-back Terahertz quantum cascaded laser structures according to claim 11, its
It is characterised by：In the step S5, a hard mask layer is formed on ridge waveguide area surface first, then in the hard mask
The opening corresponding with the three ranks optical grating construction is formed in layer, then the ridge waveguide area is performed etching by the opening,
Obtain the gap.
The preparation method of 13. three ranks distributed feed-back Terahertz quantum cascaded laser structures according to claim 11, its
It is characterised by：First bonding metal layer and the second bonding metal layer include Ti/Au composite beds.
The preparation method of 14. three ranks distributed feed-back Terahertz quantum cascaded laser structures according to claim 11, its
It is characterised by：Also include step S6：The substrate surface after thinning forms backplate.
The preparation method of 15. three ranks distributed feed-back Terahertz quantum cascaded laser structures according to claim 11, its
It is characterised by：Also include step S7：Will dissociate laser tube core, by indium sheet be welded on copper it is heat sink on, using spun gold bonding wire
Realize electrical pumping.
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