CN106876517A - A kind of method of pore removal after polysilicon chip diffusion - Google Patents
A kind of method of pore removal after polysilicon chip diffusion Download PDFInfo
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- CN106876517A CN106876517A CN201510921399.1A CN201510921399A CN106876517A CN 106876517 A CN106876517 A CN 106876517A CN 201510921399 A CN201510921399 A CN 201510921399A CN 106876517 A CN106876517 A CN 106876517A
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- pore
- silicon chip
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- chip
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- 239000011148 porous material Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000009792 diffusion process Methods 0.000 title claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012188 paraffin wax Substances 0.000 claims abstract description 7
- 239000007921 spray Substances 0.000 claims abstract description 6
- 239000001993 wax Substances 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 3
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 3
- 239000003643 water by type Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 6
- 210000005056 cell body Anatomy 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 235000008216 herbs Nutrition 0.000 abstract description 10
- 210000002268 wool Anatomy 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000012634 fragment Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses the method for pore removal after a kind of diffusion of polysilicon chip, it in turn includes the following steps：Pore silicon chip after diffusion is carried out into wax spray mask process；Use HNO3The silicon chip unmasked areas pore is removed with HF mixed liquors；The silicon chip paraffin mask residue is removed with KOH and BDG mixed liquors；The silicon chip is cleaned with deionized water and is dried.Pore can not only be removed the beneficial effects of the invention are as follows by above-mentioned corrosion process, silicon wafer suede state will not be changed, ensure that matte is normal；Reflectance reduction, and silicon slice corrosion amount only increases 1.5mg~1.7mg, farthest ensure that silicon chip original thickness, will not excessively cause silicon chip thinning because of etching extent so as to fragment rate phenomenon high in production process, so as to overcome because making herbs into wool and diffusion behind efficiency are low, fragment rate is high, time-consuming again, increase production cost problem.
Description
Technical field
The present invention relates to crystal silicon solar batteries piece manufacture field, pore after being spread more particularly to a kind of polysilicon chip
The method of removal.
Background technology
Polycrystalline silicon solar cell manufacturing process flow includes making herbs into wool, diffusion, etching, plated film, silk-screen printing, sintering, classification
Detection, wherein the purpose for spreading is to be internally formed the heart PN junction of polycrystalline silicon solar cell in silicon chip, in this operation by
In by external environment condition cleanliness factor and diffusion environment cleanliness harmful effect in itself, it is easy to which silicon chip surface occurs after causing diffusion
Pore phenomenon, such silicon chip flows into later process, can produce because outward appearance degrades, resultant battery piece outward appearance causes after plated film
Defective work.
At present, treatment of doing over again directly is done for pore silicon chip after diffusion, after its handling process of doing over again for that will spread first
The making herbs into wool again of pore silicon chip, erodes surface PN junction and pore region, is then diffused treatment, and the method is because again
Making herbs into wool is corroded to silicon chip so that matte becomes big, reflectivity is raised, so that efficiency reduction；Etching extent increases during making herbs into wool again
So that silicon chip can be thinning, silicon chip fragment rate is caused to increase, and making herbs into wool, again dissipation period time loss again, cause yield to drop
It is low, so as to increased production cost.
The content of the invention
It is an object of the invention to provide the method for pore removal after a kind of diffusion of polysilicon chip, overcome because of making herbs into wool again
And diffusion behind efficiency it is low, fragment rate is high, time-consuming, increase production cost problem.
In order to solve the above-mentioned technical problem, after the technical solution that the present invention is used is to provide a kind of polysilicon chip diffusion
The method of pore removal, it comprises the following steps：
S1. pore silicon chip after diffusion is carried out into wax spray mask process；
S2. HNO is used3The silicon chip unmasked areas pore is removed with HF mixed liquors；
S3. the silicon chip paraffin mask residue is removed with BDG mixed liquors with KOH；
S4. the silicon chip is cleaned with deionized water and is dried.
Wherein S1 according to printed pattern needs, can mask into different graphic, specific method is, printing and silk screen grid line pattern
The same organic material mask is used as corrosion barrier layer；
Wherein S2 HNO3It is HF with the mixed liquor allocation ratio of HF：HNO3：DI-water=1:9:16, the specific side of preparation of mixed liquor
Method is：First to 140L deionized waters are added in cell body, the HF that 9L concentration is 49% is subsequently adding, it is 69% to add 80L concentration
HNO3, the reaction time is 60s~70s, and reaction temperature is 15 ± 2 DEG C, and corrosion depth is controlled in 15nm~30nm；
Wherein S3 KOH and BDG mixed liquor allocation ratios KOH：BDG：DI-water=1:4:60, the specific preparation method of mixed liquor
For：First to 120L deionized waters are added in cell body, the KOH that 2L concentration is 48% is subsequently adding, it is 99.7% to add 8L concentration
BDG, the reaction time is 80s~90s, and reaction temperature is 25 ± 5 DEG C；
After wherein S4 deionized waters clean the silicon chip, dried, 30 DEG C~50 DEG C of drying temperature, drying time 5s~10s.
The beneficial effects of the invention are as follows：Pore can not only be removed by above-mentioned corrosion process, silicon chip suede will not be changed
Surface state, ensure that matte is normal；Reflectance reduction, and silicon slice corrosion amount only increases 1.5mg~1.7mg, farthest
Silicon chip original thickness is ensure that, will not excessively cause silicon chip thinning because of etching extent so as to fragment rate phenomenon high in production process, from
And overcome because making herbs into wool and diffusion behind efficiency are low, fragment rate is high, time-consuming again, increase production cost problem.
Brief description of the drawings
Fig. 1 present invention provides the process chart of technical scheme
The matte shape appearance figure that Fig. 2 is processed pore after polysilicon chip diffusion again using existing process
The matte shape appearance figure that Fig. 3 is prepared using the method for pore removal after the polysilicon chip diffusion of present invention offer
The reflectivity comparison diagram of the polysilicon chip that Fig. 4 is prepared using the technical scheme that existing process and the present invention are provided.
Specific embodiment
The technical scheme that the present invention is provided is described in further detail below in conjunction with the accompanying drawings.
In the present embodiment, the skill that the silicon chip of pore is used using existing process and the present invention after being spread to polysilicon
Art scheme is respectively processed, and the experimentation and experimental result to two kinds of experimental programs are analyzed separately below.
Experiment one：The silicon chip of pore carries out making herbs into wool again after being spread to polysilicon using existing process, erodes surface
PN junction and pore region, are then diffused treatment, and the matte shape appearance figure of the silicon chip after treatment is as shown in Fig. 2 reflectivity
Data it is as shown in Figure 4.The silicon chip of pore carries out making herbs into wool post-etching amount again after being spread to polysilicon using the technical program
0.12g。
Experiment two：The technical side that the method removed using pore after a kind of polysilicon chip diffusion that the present invention is provided is used
Case, comprises the following steps that：
Step 1：Pore polysilicon chip by wax spray equipment according to printed pattern needs, into corresponding scheme by mask after spreading
Shape, specific method is that pore silicon chip after diffusion is printed into the organic material as silk screen grid line pattern by wax spray equipment
Mask, mask grid line width be 250nm as corrosion barrier layer, because pore shows as irregularities point on silicon chip after diffusion
Cloth, during paraffin mask, a portion pore can be covered by paraffin mask grid line, a part of outside mask grid region, pin
A part of pore can be covered by paraffin mask grid line, is covered by gate electrode line after plated film printing, finished appearance is acted normally,
Another part pore carries out solution ratio removal pore outside mask grid region according to S2, and the wherein reaction time is
65s, reaction temperature is 15 DEG C, and corrosion depth is 20nm.
Step 2：By after wax spray equipment mask, the diffusion pore silicon chip that mask is completed is in HF/HNO3In corrosive liquid
Unmasked areas is corroded, wherein HNO3, HF corrosion liquid preparation method be：To first adding 140L deionizations in cell body
Water, add HF that 9L concentration is 49%, add the HNO that 80L concentration is 69%3, the reaction time is 60s, and reaction temperature is 15
DEG C, corrosion depth control 20nm.
Step 3：By HNO3After HF mixing corrosions, KOH, BDG removal silicon chip surface are carried out to the silicon chip porous
Silicon and silicon chip surface paraffin, the preparation method of specific KOH, BDG liquid is：First to adding 120L deionized waters, again in cell body
2L concentration is added to be 48% KOH, add the BDG that 8L concentration is 99.7%, the reaction time is 85s, reaction temperature is 25 DEG C.
The contrast situation of two kinds of mattes of technical scheme, reflectivity and photoelectric transformation efficiencies is as shown in the table.Thus
Know, the photoelectric transformation efficiency of pore silicon chip slightly has raising after the diffusion of the technical scheme treatment that the present invention is provided.By above-mentioned
The implementation of embodiment, pore is effectively removed after silicon chip diffusion, and it is from technique, in quality and raw to ensure that silicon chip
It is satisfied by requiring on product.
Claims (5)
1. a kind of method that pore is removed after polysilicon chip diffusion, it comprises the following steps：
S1. pore silicon chip after diffusion is carried out into wax spray mask process；
S2. HNO is used3The silicon chip unmasked areas pore is removed with HF mixed liquors；
S3. the silicon chip paraffin mask residue is removed with BDG mixed liquors with KOH；
S4. the silicon chip is cleaned with deionized water and is dried.
2. the method that pore is removed after a kind of polysilicon chip diffusion according to claim 1, it is characterised in that：Described
S1 according to printed pattern needs, can mask into different graphic, specific method is, prints the organic material as silk screen grid line pattern
Material mask is used as corrosion barrier layer.
3. the method that pore is removed after a kind of polysilicon chip diffusion according to claim 1, it is characterised in that：Described
S2 HNO3It is HF with the mixed liquor allocation ratio of HF：HNO3：DI-water=1:9:16, the specific preparation method of mixed liquor is：First to
140L deionized waters are added in cell body, the HF that 9L concentration is 49% is subsequently adding, the HNO that 80L concentration is 69% is added3, reaction
Time is 60s~70s, and reaction temperature is 15 ± 2 DEG C, and corrosion depth is controlled in 15nm~30nm.
4. the method that pore is removed after a kind of polysilicon chip diffusion according to claim 1, it is characterised in that：Described
S3 KOH and BDG mixed liquor allocation ratios KOH：BDG：DI-water=1:4:60, the specific preparation method of mixed liquor is：First to groove
120L deionized waters are added in body, the KOH that 2L concentration is 48% is subsequently adding, the BDG that 8L concentration is 99.7% is added, during reaction
Between be 80s~90s, reaction temperature be 25 ± 5 DEG C.
5. the method that pore is removed after a kind of polysilicon chip diffusion according to claim 1, it is characterised in that：Described
After S4 deionized waters clean the silicon chip, dried, 30 DEG C~50 DEG C of drying temperature, drying time 5s~10s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510921399.1A CN106876517A (en) | 2015-12-14 | 2015-12-14 | A kind of method of pore removal after polysilicon chip diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510921399.1A CN106876517A (en) | 2015-12-14 | 2015-12-14 | A kind of method of pore removal after polysilicon chip diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876517A true CN106876517A (en) | 2017-06-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510921399.1A Pending CN106876517A (en) | 2015-12-14 | 2015-12-14 | A kind of method of pore removal after polysilicon chip diffusion |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3559283A (en) * | 1969-06-16 | 1971-02-02 | Dionics Inc | Method of producing air-isolated integrated circuits |
| CN102945894A (en) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | Preparation method of aluminum oxide passivation film and back electrode of crystalline silicon solar cell |
| CN103208560A (en) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | Method for processing crystalline silicon solar cell paraffin mask |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
| CN104282799A (en) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | Technology for manufacturing IBC battery interdigitated structure by adopting reverse mask etching |
-
2015
- 2015-12-14 CN CN201510921399.1A patent/CN106876517A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3559283A (en) * | 1969-06-16 | 1971-02-02 | Dionics Inc | Method of producing air-isolated integrated circuits |
| CN102945894A (en) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | Preparation method of aluminum oxide passivation film and back electrode of crystalline silicon solar cell |
| CN103208560A (en) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | Method for processing crystalline silicon solar cell paraffin mask |
| CN104282799A (en) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | Technology for manufacturing IBC battery interdigitated structure by adopting reverse mask etching |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
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Application publication date: 20170620 |