CN106873315B - A kind of via layer OPC modeling methods - Google Patents
A kind of via layer OPC modeling methods Download PDFInfo
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- CN106873315B CN106873315B CN201710157106.6A CN201710157106A CN106873315B CN 106873315 B CN106873315 B CN 106873315B CN 201710157106 A CN201710157106 A CN 201710157106A CN 106873315 B CN106873315 B CN 106873315B
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- line width
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of via layer OPC modeling methods, by being sampled on wafer, line width metric data of the acquisition sampling figure in multiple directions respectively, establish the sampling figure and its one-to-one file between the line width metric data of above-mentioned multiple directions of resolution chart, the sampling figure that resolution chart is found out by model fitting operation emulates data in the line width of above-mentioned multiple directions, finally, carry out the fitting and calibration of OPC model, make the OPC model after calibration emulation line width and actual amount survey line it is wide between difference be less than modelling technique specification, obtain OPC model, preferably characterize the overall condition of via process, improve the precision of via layer OPC model.
Description
Technical field
The present invention relates to optical proximity effect amendment (optical proximity correction：Opc) field, especially
It is to be related to via layer OPC modeling methods.
Background technology
With the sustainable development of integrated circuit, manufacturing technology constantly towards smaller size develop, lithographic process at
The main bottleneck developed to smaller characteristic size for limitation integrated circuit.In the semiconductor manufacturing of deep-submicron, characteristic size
It has been far smaller than the wavelength of light source.Due to the diffraction effect of light, cause to be projected in silicon chip draw above shape and design object figure
Shape differs greatly, and this phenomenon is known as optical approach effect (Optical Proximity Effect, OPE), including line
Wide variation, the sphering of corner, the situations such as shortening of line length.In order to compensate for the influence that OPE is generated, designer needs according to certain
Rule, the plate-making work of reticle is carried out after directly modifying on the basis of design object figure again.This is corrected
Process is known as photoetching Proximity effect correction (Optical Proximity Correction, OPC), such as line tail is modified as hammering into shape
The figure etc. of head (hammer head) etc.Figure after OPC can be formed and script using the influence of OPE on silicon chip
The close figure of design object figure.The design object of OPC is that the litho pattern after photoetching is practical as close as user
The targeted graphical intentionally got.In general 0.18 micron and its lithographic process below, which need to be aided with OPC, just can be obtained preferably
Photoetching quality.During OPC, need to detect modified effect using software emulation, and according to simulation result iteration
OPC model is changed, therefore the precision of model is most important.
For the technique of via layer, with the continuous reduction of line width, the processing technology difficulty of via layer is increasingly
Greatly, this also leads to the picture quality of via layer also worse and worse, often will appear through-hole and disappears or the defects of through-hole merges.At this
In the case of sample, the precision of OPC model and good figure predictive ability are particularly important.The OPC modelings of via layer at present, generally
For, as shown in Figure 1, using on some through-hole structure of resolution chart, the line width measuring value on a direction is obtained, is passed through
The fitting operation of optical parameter and statistical parameter finds the scheme of model residual volume minimum of allowing, to establish OPC model.It is above-mentioned
Method is in larger lithographic process, and since via hole image is insensitive to OPE, the pattern of the through-hole of obtained resolution chart is symmetrical
Property it is high, be approximately round, therefore, the line width measuring value on a direction of one through-hole structure of use of the prior art can react
The overall condition of technique, still, as lithographic process is smaller and smaller, the pattern of the through-hole of obtained resolution chart is by other factors
Influence becomes to deviate considerably from circle, as shown in Figure 1, the resolution chart of through-hole becomes deformity, therefore, the prior art leads to one
Pore structure carries out the OPC modeling methods of the line width sampling of single direction, and the precision of the OPC model of acquisition is not enough to reaction process
Overall condition.
The patent of application number 201310654729.6, it is proposed that a kind of OPC model calibration method based on area provides more
For accurate OPC model, yield when follow-up manufacture through-hole is effectively improved.But there is essence in the OPC model calibration based on area
The problem of degree and efficiency, on the one hand, area is unable to the process condition of W-response through-hole；On the other hand, OPC model calibration process
In need a large amount of operation time, whole efficiency relatively low the calculating of area.
Invention content
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of via layer OPC modeling methods are provided,
Line width by carrying out different directions respectively to sampling through-hole structure samples so that while ensureing computational efficiency, also improves
The precision of via layer OPC model.
To achieve the above object, technical scheme is as follows：
A kind of via layer OPC modeling methods, include the following steps：
Step S01：Design via layer resolution chart；
Step S02：Photoetching is carried out to wafer；
Step S03：It is sampled on wafer, according to the property in irregular shape of sampling figure, acquisition respectively can characterize
Sample the line width metric data of the multiple directions of the true shape of figure；
Step S04：Establish resolution chart sampling figure and its between the line width metric data of above-mentioned multiple directions
One-to-one file；
Step S05：Operation is fitted to line width metric data, finds out the sampling figure of resolution chart in above-mentioned multiple sides
To line width emulate data；
Step S06：Each sampling figure that step S05 is obtained is carried out successively in the line width emulation data of above-mentioned multiple directions
Calibration, if respectively difference of the sampling figure between the corresponding line width metric data of the line width emulation data of above-mentioned multiple directions
Value is respectively less than modelling technique specification, thens follow the steps S07；Otherwise, return to step S05 corrects line width and emulates data.
Step S07：Export OPC model.
Preferably, in the step S03, the line width metric data in 2~5 directions is acquired.
Preferably, in the step S03, further include handling the line width metric data of acquisition, filter out insincere
Sampled point metric data.
Preferably, in step S06, each sampling figure line width corresponding in the line width emulation data in some direction
The computational methods of phase difference between metric data are：First, it calculates line width of each sampling figure in some direction and emulates data
Difference between corresponding line width metric data is as original residual error；Secondly, above-mentioned original residual error is calculated
The root mean square of square value or cube value.
Preferably, in the step S03, the sample graph just as when include several one-dimensional patterns and several X-Y schemes.
Preferably, the one-dimensional pattern and the X-Y scheme include several different pattern image.
It can be seen from the above technical proposal that the present invention samples the line width of several different directions of figure by online acquisition
Metric data can obtain more accurate OPC model, preferably characterize the overall condition of via process.This improves logical
The precision of aperture layer OPC model.
Description of the drawings
Fig. 1 is the via layer OPC modeling datas sampling schematic diagram of the prior art.
Fig. 2 is the via layer OPC modeling method flow charts of one embodiment of the invention.
Fig. 3 is the via layer OPC modeling datas sampling schematic diagram of one embodiment of the invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, the specific implementation mode of the present invention is described in further detail.
It should be noted that in following specific implementation modes, when embodiments of the present invention are described in detail, in order to clear
Ground indicates the structure of the present invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid in this, as limitation of the invention to understand.
In specific implementation mode of the invention below, referring to Fig. 2, Fig. 2 is the via layer OPC modeling methods of the present invention
Flow chart, and Fig. 3 is combined, the further profound understanding present invention.The invention discloses a kind of via layer OPC modeling methods, including
Following steps：
Step S01 designs via layer resolution chart.
Via layer resolution chart generally comprises but is not limited to one-dimensional array, two-dimensional array, 3*3 arrays, 5*5 arrays, two dimension
The figure of dislocation array, is used for distortion behavior of the comprehensive collection photoetching process under various figures.The present embodiment is used such as Fig. 3 institutes
Show two dimension dislocation array be used as via layer resolution chart, 201 for the present invention misplace array via layer layout patterns, 202
It is the via layer resolution chart of the present invention, purpose is that resolution chart 202 maximumlly meets layout patterns 201.
Step S02：Photoetching is carried out to wafer.Mask is made with the resolution chart that step S01 is obtained, and light is carried out to wafer
It carves.
Step S03, is sampled on wafer, and according to the property in irregular shape of sampling figure, acquisition respectively can characterize
Sample the line width metric data of the multiple directions of the true shape of figure.
In the prior art, the line width measurement in one direction of a through-hole structure is only acquired to the through-hole structure of identical size
Data cannot characterize the processing situation of the through-hole of deformity well.The present invention is by increasing the number of metric data come preferably
Characterize the processing situation of through-hole.Specifically, after resolution chart design, photoetching process is carried out, and up-sample in wafer, in crystalline substance
The sampling figure sampled on circle can include several one-dimensional patterns and several X-Y schemes, these one-dimensional patterns and two simultaneously
It may include several different pattern image again to tie up figure, about acquires hundreds to thousands and samples figure, collects all adopt
The line width data of master drawing shape.Since the deformity of each sampling figure does not have symmetry distribution, according to the shape of sampling figure
Scrambling, respectively acquisition can characterize the line width metric data more than a direction of the true shape of sampling figure, preferably
For 2~5 directions, in the present embodiment, as shown in 203 in Fig. 3, according to the property in irregular shape of sampling figure, collection capacity
The direction of measured data is that there are three the line width numerical value in direction as test altogether for horizontal direction, vertical direction and 45 degree of oblique angles direction
The online line width metric data of figure samples the true shape of figure with more accurate characterization, thus it is guaranteed that each sample graph
Shape is all characterized well.
Due to that can have error during the measurement of wafer, pass through and the line width metric data of acquisition is carried out
Processing, filters out the metric data of incredible sampled point, improves the accuracy of sampling.Specifically, it may be used and adopted to same
Several different repetitive unit positions of master drawing shape average after repeatedly measuring, and are fluctuated during the multiple measurement of removal
The metric data of larger sampled point, and removal are significantly less than the metric data of the sampled point of design rule size.
Step S04, establish each sampling figure of resolution chart with its above-mentioned multiple directions line width metric data it
Between one-to-one file.
One-to-one file is established between resolution chart and line width metric data, for being transported in subsequent models fitting
The distortion behavior of signal is calculated in calculation.
Step S05：Operation is fitted to line width metric data, finds out each sampling figure of resolution chart above-mentioned more
The line width in a direction emulates data.
According to each sampling figure measured in the line width metric data of multiple directions, simulates and obtain initial OPC model.Meter
It calculates in the initial OPC model with the corresponding figure of sampling figure in multiple directions identical with its line width metric data
Line width emulates data.
Step S06：Each sampling figure that step S05 is obtained is carried out successively in the line width emulation data of above-mentioned multiple directions
Calibration, if respectively difference of the sampling figure between the corresponding line width metric data of the line width emulation data of above-mentioned multiple directions
Value is respectively less than modelling technique specification, thens follow the steps S07；Otherwise, return to step S05 corrects line width and emulates data.
Step S07：Export OPC model.
Initial OPC model is calibrated, compares, finds out just in the line width metric data of different directions with sampling figure
Each of beginning OPC model samples difference of the figure between the corresponding line width metric data of the line width emulation data of different directions
Value, the difference need to meet the modelling technique specification of the industry, and otherwise return to step S05 continues iteration, recycle above-mentioned steps, until
The modelling technique specification for meeting the industry obtains final more accurate OPC model.
Wherein, the phase difference between the corresponding line width metric data of line width emulation data can be that line width emulates data
Subtract its corresponding line width metric data, or line width emulates the equal of the difference of the corresponding line width metric data of data
Root, or can accurately reflect the mathematical expression that the two is distinguished by other and be calculated.In the present embodiment, line width emulates data
The computational methods of phase difference between corresponding line width metric data are：First, calculate each sampling figure at some
The line width in direction emulates the corresponding original residual error between the line width metric data of the direction of data.For example,
MeasCD1, measCD2 ... measCDn are respectively the 1st sampling figure, and n-th of sampling figure of the 2nd sampling figure ... is at certain
The line width metric data in a direction, modelCD1, modelCD2 ... modelCDn are respectively the 1st sampling figure, the 2nd sampling
Line width of n-th of the sampling figure of figure ... in above-mentioned direction emulates data, then each samples the line width of figure in a certain direction
Emulation data and line width metric data between original residual error MRE1, MRE2 ... MREn be respectively：
MRE1=modelCD1-measCD1
MRE2=modelCD2-measCD2
MREn=modelCDn-measCDn
Secondly, the square value of above-mentioned original residual error or the root mean square of cube value are calculated.Specifically, it may be used following
Formula：M=[(MRE12)2+(MRE22)2+...+(MREn2)2]1/2Or M=[(MRE13)2+(MRE23)2+...+(MREn3
)2]1/2。
Using above-mentioned calibration method, the line width emulation data to each sampling figure in remaining direction are calibrated successively.
OPC model is established with after verification, and output carries out layout patterns amendment, and photoetching process distortion phenomenon is repaiied in realization
Just.
It can be seen from the above technical proposal that the present invention acquires several not Tongfangs by the acquisition figure to resolution chart
To line width metric data, establish the one-to-one correspondence file between resolution chart and the line width metric data of all directions, pass through
Model fitting operation finds out sampling figure and finally carries out OPC model in the line width emulation data of several above-mentioned different directions
Fitting and calibration, the difference between keeping the emulation line width of the OPC model after calibration and actual amount survey line wide are advised less than modelling technique
Lattice obtain OPC model, preferably characterize the overall condition of via process.This improves the precision of via layer OPC model.
Above-described to be merely a preferred embodiment of the present invention, the embodiment is not to be protected to limit the patent of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention are protected, similarly should be included in
In protection scope of the present invention.
Claims (5)
1. a kind of via layer OPC modeling methods, it is characterised in that：Include the following steps：
Step S01：Design via layer resolution chart；
Step S02：Photoetching is carried out to wafer；
Step S03：It is sampled on wafer, according to the property in irregular shape of sampling figure, acquisition respectively can characterize sampling
The line width metric data of the multiple directions of the true shape of figure, wherein the line width metric data is the sampling each side of figure
Upward line width numerical value；
Step S04：Establish resolution chart sampling figure and its between the line width metric data of above-mentioned multiple directions one by one
Corresponding file；
Step S05：Operation is fitted to line width metric data, finds out the sampling figure of resolution chart in above-mentioned multiple directions
Line width emulates data；
Step S06：School is carried out successively in the line width emulation data of above-mentioned multiple directions to each sampling figure that step S05 is obtained
Standard, if respectively phase difference of the sampling figure between the corresponding line width metric data of the line width emulation data of above-mentioned multiple directions
Respectively less than modelling technique specification, thens follow the steps S07；Otherwise, return to step S05 corrects line width and emulates data, wherein is described
The calculating side of phase difference of each sampling figure between the corresponding line width metric data of the line width emulation data in some direction
Method is：First, each sampling figure is calculated between the corresponding line width metric data of the line width emulation data in some direction
Difference is as original residual error；Secondly, the square value of above-mentioned original residual error or the root mean square of cube value are calculated；
Step S07：Export OPC model.
2. via layer OPC modeling methods according to claim 1, which is characterized in that in the step S03, acquisition 2~5
The line width metric data in a direction.
3. according to the via layer OPC modeling methods described in claim 1, which is characterized in that in the step S03, further include
The line width metric data of acquisition is handled, the metric data of incredible sampled point is filtered out.
4. according to the via layer OPC modeling methods described in claim 1, which is characterized in that described to adopt in the step S03
Master drawing just as when include several one-dimensional patterns and several X-Y schemes.
5. according to the via layer OPC modeling methods described in claim 4, which is characterized in that the one-dimensional pattern and described two
It includes several different pattern image to tie up figure.
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| US11630396B2 (en) | 2018-08-14 | 2023-04-18 | Asml Netherlands B.V. | Model calibration and guided metrology based on smart sampling |
| KR102585099B1 (en) * | 2018-08-31 | 2023-10-06 | 에이에스엠엘 네델란즈 비.브이. | Measurement methods and devices |
| CN111427240B (en) * | 2020-03-25 | 2021-06-04 | 合肥晶合集成电路股份有限公司 | Method for establishing optical data correction model |
| CN112541205B (en) * | 2020-12-01 | 2022-12-30 | 泉芯集成电路制造(济南)有限公司 | Modeling method |
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| CN1368661A (en) * | 2001-02-06 | 2002-09-11 | 联华电子股份有限公司 | Optical nearby correcting method based on contact hole model |
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