CN106862553B - A kind of cleaning method of metal nanometer line - Google Patents
A kind of cleaning method of metal nanometer line Download PDFInfo
- Publication number
- CN106862553B CN106862553B CN201710166404.1A CN201710166404A CN106862553B CN 106862553 B CN106862553 B CN 106862553B CN 201710166404 A CN201710166404 A CN 201710166404A CN 106862553 B CN106862553 B CN 106862553B
- Authority
- CN
- China
- Prior art keywords
- protective layer
- nanometer line
- metal nanometer
- chloride
- nitrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/024—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
- C23G5/036—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds having also nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a kind of cleaning methods of metal nanometer line,Including coating procedure,Cleaning process,Dispersion step and clearing process,It is characterized in that the cleaning method of the metal nanometer line forms layer protective layer on metal nanometer line surface,The protective layer effectively prevents the heavy of metal nanometer line when subsequent filtering and washing and gathers,Then filtering and washing removes solvent,Organic polymer and inorganic salts,The finally protective layer on removal metal nanometer line surface,The beneficial effects of the invention are as follows the quick of the metal nanometer line,High-efficiency washing technique,Overcoming centrifuge washing, time-consuming,It is cumbersome,The low disadvantage of efficiency,The protective layer effectively prevents the heavy of metal nanometer line when subsequent filtering and washing and gathers,Realize the quick of metal nanometer line,High-efficiency washing,Efficiently avoid the film forming phenomenon occurred during filtration washing,Improve the yield and quality of product.
Description
Technical field
The invention belongs to technical field of nano material, relate more specifically to a kind of cleaning method of metal nanometer line.
Background technology
Tin indium oxide（ITO）It is to quote widest transparent electrode material at present, main application is in display screen, touch screen
Deng in the related technology.But ITO is more crisp, and of high cost, therefore the alternative materials for developing ITO have become trend.Research has shown that metal
（Such as silver, copper）Nano wire not only has good conductive property, but also small-size effect, the quantum effect shown due to it
Answer, high-ratio surface effect and with the characteristics such as unique optics, electricity, can be widely applied to transparent conductive electrode, Flexible Displays
The fields such as screen, surface enhanced Raman technique, function nano device.
Currently, metal nanometer line mostly uses wet method preparation, contains a large amount of organic polymers more, influence its electric conductivity, it can not
It is directly used in the preparation of conductive film.Therefore metal nanometer line need to be washed, in the case where ensureing not occurring heavy poly-, removal
The a large amount of organic polymers in surface.It is cleaned generally using centrifuge washing, filtration washing etc..Time-consuming for centrifuge washing, cumbersome,
Efficiency is low, limits large-scale application of the metal nanometer line on flexible transparent conductive film.Filtration washing is efficient, but metal
Nano wire is easily heavy to be polymerized to film, and is unable to redisperse after forming a film.
It was attempted before by the armor coated protection purpose that reaches, China patent of invention CN104299721A is disclosed
A kind of optical property improving film by cleaning after the protective layer that metal nanowire thin-films surface coats a thin layer, the patent
The purpose of middle protective layer is that falling off for metal nanometer line is prevented in follow-up cleaning process, is then ensureing the same of electric conductivity
When, the optical property of film is improved, which belongs to finished metal nano wire later stage maintenance technology.
However, in metal nanometer line production process, when metal nanometer line masterbatch cleaned when conventional filter, how to keep away
Exempt from metal nanometer line and form film, and then efficiently remove a large amount of organic polymers in masterbatch, further increases metal nanometer line
Performance the problem of it is extremely urgent.Therefore it is badly in need of developing a kind of quick clear technique of metal nanometer line, effectively reduces metal and receive
The price of rice noodles accelerates commercialization process of the metal nanometer line on flexible transparent conductive film.
Invention content
The quick of metal nanometer line, high-efficiency washing side are realized with improved filtering and washing technique the present invention provides a kind of
Method.The technique overcomes the centrifuge washing disadvantage that time-consuming, cumbersome, efficiency is low, while during avoiding filtration washing
The film forming phenomenon of appearance.Layer protective layer is formed on metal nanometer line surface in the invention, when efficiently avoiding filtering and washing
The heavy of metal nanometer line gathers.
The present invention solve above-mentioned technical problem specific technical solution be：The cleaning method of the metal nanometer line, packet
Include coating procedure, cleaning process, dispersion step and clearing process, which is characterized in that the coating procedure, cleaning process, dispersion
Process and clearing process carry out successively；
The coating procedure is：Layer protective layer is formed on metal nanometer line surface, the protective layer includes inorganic oxide
Object protective layer, inorganic salts protective layer or organic matter protective layer, the inorganic oxide protective layer material includes but not limited to dioxy
SiClx, titanium dioxide, copper oxide, di-iron trioxide, zinc oxide, magnesia or aluminium oxide, the inorganic salts protective layer material packet
Calcium carbonate, magnesium carbonate, barium carbonate or zinc carbonate are included but are not limited to, the organic matter protective layer material includes but not limited to hexadecane
Base trimethyl ammonium chloride, cetyl trimethylammonium bromide, triphenylphosphine, cetylpyridinium chloride or hexadecyl pyrrole
Pyridine；
The method for forming the inorganic oxide protective layer is at least one kind, including thermal decomposition method or Hydrolyze method；The heat
Decomposition method step is：Metal nanometer line slurry is uniformly mixed with solvent, inorganic oxide protective layer predecessor is added, waits for that its is molten
Auxiliary agent I is added after solution and forms protective layer, filters metal nanometer line of the cleaning containing protective layer with solvent, heat point is carried out under certain temperature
Solution forms inorganic oxide protective layer；The Hydrolyze method step is：Metal nanometer line slurry is uniformly mixed with solvent, nothing is added
Machine protective oxide film predecessor waits for that auxiliary agent I is added in it after mixing, forms inorganic oxide protective layer；Described in being formed
Inorganic salts protective coating step is：Metal nanometer line slurry is uniformly mixed with solvent, inorganic salts protective layer predecessor is added, waits for
It is added auxiliary agent I after dissolving and forms inorganic salts protective layer；Forming the organic matter protective coating step is：Metal nanometer line is starched
Material is uniformly mixed with solvent, and organic matter protective layer predecessor is added, and mixing forms one layer of organic matter protective layer after a certain period of time；
The cleaning process is：The metal nanometer line containing protective layer is cleaned with solvent, obtains cleaning materials；Cleaning way is
Filtering and washing；
The dispersion step is：Metal nanometer line containing matcoveredn is uniformly mixed with dispersant solution, point
Powder be at least one kind, including anion surfactant, cationic surfactant, nonionic surfactant, both sexes from
Sub- surfactant, salt and organic polymer；The anion surfactant is at least one kind, including detergent alkylate
Sodium sulfonate, 1-isobutyl-3,5-dimethylhexylphosphoric acid sylvite, dodecyl alcohol polyoxyethylene ether sodium sulfate or lauryl sodium sulfate；Cation form
Face activating agent is at least one kind, including hexadecyltrimethylammonium chloride, cetyl trimethylammonium bromide, dimethyl
Base benzyl ammonium chloride or dodecylpyridine chloride ammonium；Nonionic surfactant is at least one kind, including polyvinylpyrrolidine
Ketone, alkyl phenol polyoxyethylene ether, methyl stearate polyoxyethylene ether, polyoxyethylene stearic acid ester, tween or sapn；Amphoteric ion
Surfactant is at least one kind, including dodecyl alanine, alkyl dimethyl sulfoethyl glycine betaine, alkyl dimethyl hydroxyl
Propyl phosphate ester glycine betaine or alkyl dimethyl betaine；Salt be at least one kind, including sodium chloride, sodium bromide, sodium citrate,
Sodium acetate or sodium oxalate；Organic polymer is at least one kind, including polyvinyl alcohol, polyoxyethylene, hydroxy-methyl cellulose, polyphenyl
Vinyl sulfonate or amino alkyl acrylates copolymer；
The clearing process is：The protective layer on metal nanometer line surface is purged using dissolution method, the dissolution method
For the metal nanometer line dispersion liquid for containing matcoveredn to be uniformly mixed with auxiliary agent II, the supernatant that inclines is stood, after must washing down
Metal nanometer line.
Further, in the coating procedure, metal nanometer line slurry concentration is 0.01-50mg/ml；Metal nanometer line with
The mass ratio of protective layer predecessor is（1:0.01）-（1:50）；The volume ratio of metal nanometer line slurry and solvent is（1:0.1）-
（1:50）；Protective layer predecessor and the mass ratio of auxiliary agent I are（1:0.01）-（1:10）；Heat decomposition temperature is 30-1500 DEG C.
Further, the inorganic oxide protective layer predecessor is at least one kind, including copper nitrate, copper sulphate, chlorine
Change copper, calcium chloride, calcium nitrate, magnesium chloride, magnesium nitrate, iron chloride, ferric nitrate, zinc nitrate, zinc chloride, aluminium chloride, aluminum nitrate, sulphur
Sour aluminium, barium nitrate, barium chloride, butyl titanate, isopropyl titanate, titanium sulfate, titanium tetrachloride, tetraethyl orthosilicate or positive silicic acid first
Ester, the thickness for forming inorganic oxide protective layer are more than 1nm；The inorganic salts protective layer predecessor is at least one kind, including
Copper nitrate, copper sulphate, copper chloride, calcium chloride, calcium nitrate, magnesium chloride, magnesium nitrate, iron chloride, ferric nitrate, zinc nitrate, zinc chloride,
Aluminium chloride, aluminum nitrate, aluminum sulfate, barium nitrate or barium chloride form inorganic salts protective layer thickness and are more than 1nm；The organic matter
Protective layer predecessor is at least one kind, including hexadecyltrimethylammonium chloride, cetyl trimethylammonium bromide, triphenyl
Phosphine, cetylpyridinium chloride or brocide.
Further, the auxiliary agent I is at least one kind, including deionized water, sodium hydroxide, potassium hydroxide, sodium carbonate, carbon
Sour hydrogen sodium, phosphoric acid or sulfuric acid；Auxiliary agent II is at least one kind, including hydrochloric acid, nitric acid, sulfuric acid, acetic acid, ammonium hydroxide, ammonium chloride, sulfuric acid
Ammonium, ammonium nitrate, potassium hydroxide or sodium hydroxide.
Further, the dispersion step, a concentration of 0.01-100mg/ml of dispersant solution；Corresponding metal nanometer line slurry
The volume of material and the volume ratio of solvent are（1:0.1）-（1:50）.
Further, described to be in cleaning process, protective layer predecessor and the mass ratio of auxiliary agent II（1:0.01）-（1：
10）.
Further, the solvent is at least one kind, including deionized water, ethyl alcohol, isopropanol, ether, acetone, hexamethylene
Or dimethylformamide.
Further, the metal nanometer line is at least one kind, including nano silver wire, copper nano-wire, nanowires of gold, platinum are received
Rice noodles and above-mentioned mixing form nano wire.
Further, the metal nanometer line is at least one kind, including nano silver wire, copper nano-wire, nanowires of gold, platinum are received
Rice noodles and above-mentioned mixing form nano wire.
The beneficial effects of the invention are as follows：The present invention develops a kind of quick, the high-efficiency washing technique of metal nanometer line, overcomes
The centrifuge washing disadvantage that time-consuming, cumbersome, efficiency is low, while it is existing to avoid the film forming occurred during filtration washing
As.Layer protective layer is formed on metal nanometer line surface first, which effectively prevents gold when subsequent filtering and washing
Belong to the heavy poly- of nano wire, then filtering and washing removal solvent, organic polymer and inorganic salts, finally remove metal nanometer line surface
Protective layer, realize quick, the high-efficiency washing of metal nanometer line.
Subordinate list explanation：
Subordinate list 1 is that filtering and washing and centrifuge washing, conventional filtering and washing Contrast on effect are improved in the present invention
Specific implementation mode：
Detail is just for the sake of that can fully understand the embodiment of the present invention in the description of the present invention, but conduct
It will be appreciated by those skilled in the art that the implementation of the present invention is not limited to these details.In addition, well known structure and function does not have
It is described in detail or shows, to avoid the main points of the embodiment of the present invention have been obscured.For the ordinary skill people of this field
For member, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
The specific implementation mode of the present invention：
Embodiment 1：
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml absolute ethyl alcohols, 50mg metatitanic acids four are added
Butyl ester, is added 250mg deionized waters after mixing, and metal nanometer line surface forms layer of titanium dioxide protective layer.
2. metal nanometer line of the filtering and washing containing titanium dioxide protective layer is cleaned with deionized water cleaning filter cake
Object；Cleaning materials is scattered in again in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.
3. 0.5gNaOH is added in the mixed liquor obtained into above-mentioned step 2, after mixing, the supernatant that inclines is stood,
Metal nanometer line after must washing down.
Case study on implementation 2
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml isopropanols, four fourth of 50mg metatitanic acids is added
Ester, is added 250mg deionized waters after mixing, and metal nanometer line surface forms layer of silicon dioxide protective layer.
2. metal nanometer line of the filtering and washing containing silicon dioxide layer of protection is cleaned with deionized water cleaning filter cake
Object；Cleaning materials is scattered in again in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.
3. 0.5gNaOH is added in the mixed liquor obtained into above-mentioned step 2, after mixing, the supernatant that inclines is stood,
Metal nanometer line after must washing down.
Case study on implementation 3
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml deionized waters, 50mg magnesium nitrates are added,
250mg sodium hydroxides are added after mixing, metal nanometer line surface forms one layer of magnesium hydroxide protective layer.
2. the metal nanometer line of the hydrogeneous mgo protection layer of filtering and washing is cleaned with deionized water cleaning filter cake
Object；Cleaning materials is scattered in again in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.
3. 0.5g hydrochloric acid is added in the mixed liquor obtained into above-mentioned step 2, after mixing, the supernatant that inclines is stood,
Metal nanometer line after must washing down.
Case study on implementation 4
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml deionized waters, 50mg calcium chloride is added,
250mg sodium carbonate is added after mixing, metal nanometer line surface forms one layer of calcium carbonate protective layer.
2. the metal nanometer line of filtering and washing calcium carbonate protective layer obtains cleaning materials with deionized water cleaning filter cake；
Cleaning materials is roasted at 900 DEG C, obtains the metal nanometer line containing calcium oxide protective layer.By the metal containing calcium oxide protective layer
Nano wire is scattered in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.
3. 0.5g hydrochloric acid is added in the mixed liquor obtained into above-mentioned step 2, after mixing, the supernatant that inclines is stood,
Metal nanometer line after must washing down.
Case study on implementation 5
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml deionized waters, 50mg barium nitrates are added,
250mg sodium carbonate is added after mixing, metal nanometer line surface forms one layer of barium carbonate protective layer.
2. the metal nanometer line of filtering and washing protective layer containing barium carbonate obtains cleaning materials with deionized water cleaning filter cake；
Cleaning materials is scattered in again in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.
3. 0.5g hydrochloric acid is added in the mixed liquor obtained into above-mentioned step 2, after mixing, the supernatant that inclines is stood,
Metal nanometer line after must washing down.
Case study on implementation 6
1. metal nanometer line slurry 5mg/ml 100ml are uniformly mixed with 100ml deionized waters, 50mg chlorinations ten are added
Six alkyl pyridines are uniformly mixed, and metal nanometer line surface forms one layer of cetylpyridinium chloride protective layer.
2. the metal nanometer line of filtering and washing chloride containing cetyl pyridinium protective layer is obtained with deionized water cleaning filter cake
To cleaning materials；Cleaning materials is scattered in again in 100ml 0.1mg/ml aqueous povidone solutions, is uniformly mixed.It stands
Incline supernatant, the metal nanometer line after must washing down.
Comparative example 1：
Centrifugal washing：Metal nanometer line is mixed with certain solvent, filtering and washing.Filter cake is scattered in and centainly contains PVP
Solution in, stirring, filter cake film forming, can not stir evenly.
Comparative example 2:
Conventional filtering and washing method：Metal nanometer line is mixed with certain solvent, centrifuge washing.It is redispersible to centrifuge product.But
This method efficiency is low.
In order to more intuitively show the product advantage of the present invention, it is special with the present invention improve filtering and washing and centrifuge washing,
Conventional filtering and washing Contrast on effect：
Subordinate list：
1 present invention of table and centrifuge washing, conventional filtering and washing Contrast on effect
In terms of the result of contrast test：
The yield of the present invention and the metal nanometer line of centrifugal washing production is respectively 99.99%, 98.00%, and routine is taken out
Filter washing method yield is 0%, but centrifugal washing can only small lot cleaning, production efficiency is relatively low.
The present invention：Without film forming phenomenon, redispersible is good；Efficiently, be conducive to high-volume to clean.
Comparative example：Centrifuge washing, without heavy poly- phenomenon, redispersible is good；But it is inefficient, it can only small lot cleaning.
Conventional filtering and washing forms a film after suction filtration, not redispersible.
In summary：This method shows advantage outstanding in yield, production efficiency and result, has essence outstanding
Property feature and significant progress.
Claims (9)
1. a kind of cleaning method of metal nanometer line, including coating procedure, cleaning process, dispersion step and clearing process, special
Sign is that the coating procedure, cleaning process, dispersion step and clearing process carry out successively；
The coating procedure is：Layer protective layer is formed on metal nanometer line surface, the protective layer includes that inorganic oxide is protected
Sheath, inorganic salts protective layer or organic matter protective layer, the inorganic oxide protective layer material include but not limited to silica,
Titanium dioxide, copper oxide, di-iron trioxide, zinc oxide, magnesia or aluminium oxide, the inorganic salts protective layer material include but not
It is limited to calcium carbonate, magnesium carbonate, barium carbonate or zinc carbonate, the organic matter protective layer material includes but not limited to cetyl front three
Ammonium chloride, cetyl trimethylammonium bromide, triphenylphosphine, cetylpyridinium chloride or brocide；
The method for forming the inorganic oxide protective layer is at least one kind, including thermal decomposition method or Hydrolyze method；The thermal decomposition
Method step is：Metal nanometer line slurry is uniformly mixed with solvent, inorganic oxide protective layer predecessor is added, after its dissolving
Auxiliary agent I is added and forms protective layer, filters metal nanometer line of the cleaning containing protective layer with solvent, thermal decomposition shape is carried out under certain temperature
At inorganic oxide protective layer；The Hydrolyze method step is：Metal nanometer line slurry is uniformly mixed with solvent, inorganic oxygen is added
Compound protective layer predecessor waits for that auxiliary agent I is added in it after mixing, forms inorganic oxide protective layer；It is inorganic described in being formed
Salt protective coating step is：Metal nanometer line slurry is uniformly mixed with solvent, inorganic salts protective layer predecessor is added, waits for that its is molten
Auxiliary agent I is added after solution and forms inorganic salts protective layer；Forming the organic matter protective coating step is：By metal nanometer line slurry with
Solvent is uniformly mixed, and organic matter protective layer predecessor is added, and mixing forms one layer of organic matter protective layer after a certain period of time；
The cleaning process is：The metal nanometer line containing protective layer is cleaned with solvent, obtains cleaning materials；Cleaning way is to filter
Washing；
The dispersion step is：Metal nanometer line containing matcoveredn is uniformly mixed with dispersant solution, the dispersant
It is at least a kind of, including anion surfactant, cationic surfactant, nonionic surfactant, amphoteric ion table
Face activating agent, salt and organic polymer；The anion surfactant is at least one kind, including dodecyl benzene sulfonic acid
Sodium, 1-isobutyl-3,5-dimethylhexylphosphoric acid sylvite, dodecyl alcohol polyoxyethylene ether sodium sulfate or lauryl sodium sulfate；Cationic surface is lived
Property agent be at least one kind, including hexadecyltrimethylammonium chloride, cetyl trimethylammonium bromide, dodecyl dimethyl benzyl
Ammonium chloride or dodecylpyridine chloride ammonium；Nonionic surfactant is at least one kind, including polyvinylpyrrolidone, alkane
Base phenol polyethenoxy ether, methyl stearate polyoxyethylene ether, polyoxyethylene stearic acid ester, tween or sapn；Amphoteric ion surface
Activating agent is at least one kind, including dodecyl alanine, alkyl dimethyl sulfoethyl glycine betaine, alkyl dimethyl hydroxypropyl
Phosphate ester glycine betaine or alkyl dimethyl betaine；Salt is at least one kind, including sodium chloride, sodium bromide, sodium citrate, acetic acid
Sodium or sodium oxalate；Organic polymer is at least one kind, including polyvinyl alcohol, polyoxyethylene, hydroxy-methyl cellulose, polystyrene
Sulfonate or amino alkyl acrylates copolymer；
The clearing process is：The protective layer on metal nanometer line surface is purged using dissolution method, the dissolution method is will
Metal nanometer line dispersion liquid containing matcoveredn is uniformly mixed with auxiliary agent II, stands the supernatant that inclines, the metal after must washing down
Nano wire.
2. the cleaning method of metal nanometer line according to claim 1, it is characterised in that in the coating procedure, metal is received
Rice noodles slurry concentration is 0.01-50mg/ml；The mass ratio of metal nanometer line and protective layer predecessor is（1:0.01）-（1:50）；
The volume ratio of metal nanometer line slurry and solvent is（1:0.1）-（1:50）；Protective layer predecessor and the mass ratio of auxiliary agent I are（1:
0.01）-（1:10）；Heat decomposition temperature is 30-1500 DEG C.
3. the cleaning method of metal nanometer line according to claim 1, it is characterised in that the inorganic oxide protection
Layer predecessor is at least one kind, including copper nitrate, copper sulphate, copper chloride, calcium chloride, calcium nitrate, magnesium chloride, magnesium nitrate, chlorination
Iron, ferric nitrate, zinc nitrate, zinc chloride, aluminium chloride, aluminum nitrate, aluminum sulfate, barium nitrate, barium chloride, butyl titanate, isopropanol
Titanium, titanium sulfate, titanium tetrachloride, tetraethyl orthosilicate or methyl orthosilicate, the thickness for forming inorganic oxide protective layer are more than
1nm；The inorganic salts protective layer predecessor is at least one kind, including copper nitrate, copper sulphate, copper chloride, calcium chloride, nitric acid
Calcium, magnesium chloride, magnesium nitrate, iron chloride, ferric nitrate, zinc nitrate, zinc chloride, aluminium chloride, aluminum nitrate, aluminum sulfate, barium nitrate or chlorine
Change barium, forms inorganic salts protective layer thickness and be more than 1nm；The organic matter protective layer predecessor is at least one kind, including 16
Alkyl trimethyl ammonium chloride, cetyl trimethylammonium bromide, triphenylphosphine, cetylpyridinium chloride or hexadecyl
Pyridine.
4. the cleaning method of metal nanometer line according to claim 1, it is characterised in that the auxiliary agent I is at least one kind,
Including deionized water, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium bicarbonate, phosphoric acid or sulfuric acid；Auxiliary agent II is at least one kind, packet
Include hydrochloric acid, nitric acid, sulfuric acid, acetic acid, ammonium hydroxide, ammonium chloride, ammonium sulfate, ammonium nitrate, potassium hydroxide or sodium hydroxide.
5. the cleaning method of metal nanometer line according to claim 1, it is characterised in that the dispersion step, dispersant are molten
A concentration of 0.01-100mg/ml of liquid；The volume of corresponding metal nanometer line slurry and the volume ratio of solvent are（1:0.1）-（1:50）.
6. the cleaning method of metal nanometer line according to claim 1, it is characterised in that described in cleaning process, protective layer
The mass ratio of predecessor and auxiliary agent II is（1:0.01）-（1：10）.
7. the cleaning method of the metal nanometer line according to claim 1-6, it is characterised in that the solvent is at least one kind,
Including deionized water, ethyl alcohol, isopropanol, ether, acetone, hexamethylene or dimethylformamide.
8. the cleaning method of the metal nanometer line according to claim 1-6 any one, it is characterised in that the metal is received
Rice noodles are at least one kind, including nano silver wire, copper nano-wire, nanowires of gold, Pt nanowires and above-mentioned mixing form nano wire.
9. the cleaning method of metal nanometer line according to claim 7, it is characterised in that the metal nanometer line is at least
One kind, including nano silver wire, copper nano-wire, nanowires of gold, Pt nanowires and above-mentioned mixing form nano wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710166404.1A CN106862553B (en) | 2017-03-20 | 2017-03-20 | A kind of cleaning method of metal nanometer line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710166404.1A CN106862553B (en) | 2017-03-20 | 2017-03-20 | A kind of cleaning method of metal nanometer line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106862553A CN106862553A (en) | 2017-06-20 |
| CN106862553B true CN106862553B (en) | 2018-08-14 |
Family
ID=59173246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710166404.1A Active CN106862553B (en) | 2017-03-20 | 2017-03-20 | A kind of cleaning method of metal nanometer line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106862553B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108001073A (en) * | 2017-12-01 | 2018-05-08 | 易靖峰 | A kind of writing brush cleaner and writing brush cleaning method for protecting pen hair |
| CN109102919B (en) * | 2018-08-24 | 2020-12-01 | 山东圣泉新材料股份有限公司 | Composite conductive film and preparation method and application thereof |
| CN109805453B (en) * | 2019-03-11 | 2022-07-26 | 南京银纳新材料科技有限公司 | Manufacturing method of electronic cigarette heating assembly based on metal nanowires |
| CN110918554A (en) * | 2019-12-04 | 2020-03-27 | 郑州工程技术学院 | Metal nanowire washs and uses dispersion equipment |
| CN113477639B (en) * | 2021-06-25 | 2022-06-10 | 武钢集团昆明钢铁股份有限公司 | Method for cleaning ferric trichloride stains |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012060776A1 (en) * | 2010-07-19 | 2012-05-10 | National University Of Singapore | Metal nanowires, nanomesh and a method of fabrication |
| CN103433503A (en) * | 2013-08-19 | 2013-12-11 | 中国科学院合肥物质科学研究院 | Preparing method of ultra-long silver nanowire |
| CN104299721A (en) * | 2014-09-05 | 2015-01-21 | 中国科学院合肥物质科学研究院 | Method for improving optical property of metal nanowire transparent conductive film through cleaning treatment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101334601B1 (en) * | 2011-10-11 | 2013-11-29 | 한국과학기술연구원 | Metal nanowire with high linearity, fabrication method of the same and transparent conducting film comprising the same |
-
2017
- 2017-03-20 CN CN201710166404.1A patent/CN106862553B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012060776A1 (en) * | 2010-07-19 | 2012-05-10 | National University Of Singapore | Metal nanowires, nanomesh and a method of fabrication |
| CN103433503A (en) * | 2013-08-19 | 2013-12-11 | 中国科学院合肥物质科学研究院 | Preparing method of ultra-long silver nanowire |
| CN104299721A (en) * | 2014-09-05 | 2015-01-21 | 中国科学院合肥物质科学研究院 | Method for improving optical property of metal nanowire transparent conductive film through cleaning treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106862553A (en) | 2017-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106862553B (en) | A kind of cleaning method of metal nanometer line | |
| Tian et al. | Unconventional aluminum ion intercalation/deintercalation for fast switching and highly stable electrochromism | |
| TWI508922B (en) | Compositions and methods for growing copper nanowires | |
| TW201422536A (en) | Method for producing silver nanowires using ionic liquid | |
| CN105776187A (en) | Method for green environmental-protection preparation of high-concentration ultra-clean graphene dispersion liquid | |
| CN102110489A (en) | Ultrathin film of transparent high-strength and high-conductivity electrical self-supporting carbon nano-tube and preparation method thereof | |
| CN104785794B (en) | A kind of uniform nano silver wire preparation method of draw ratio | |
| CN107814380B (en) | Utilize the method for shear thickening system removing preparing graphite alkene | |
| CN106564890B (en) | The method of salt-mixture up-stripping preparing graphite alkene | |
| TW201200469A (en) | Etch patterning of nanostructure transparent conductors | |
| Mohanadas et al. | A copper-based metal-organic framework/tungsten trioxide with improved coloration efficiency for electrochromic application | |
| CN106783214B (en) | A kind of preparation method and application of hollow graphite alkene fiber electrode | |
| WO2019141260A1 (en) | Method for manufacturing surface-roughened silver nanowire | |
| TW201330011A (en) | Synthesis of cupronickel nanowires and their application in transparent conducting films | |
| CN102241985A (en) | Wet etching solution composition for transparent conductive film | |
| Ren et al. | Effect of isopropanol on the micellization of binary mixture containing amino sulfonate amphoteric surfactant in aqueous solution: mixing with sodium dodecylbenzene sulfonate | |
| CN105537615A (en) | Method of preparing silver nanowires in different diameters with one-pot process | |
| CN104108700A (en) | Graphene material powder and preparation method | |
| CN103482614A (en) | Preparation method of graphene-ZnO nanoparticle composite material | |
| CN102463351B (en) | Methods for preparing silver nano-particles and conductive nano-film of silver nano-particles | |
| CN105304209B (en) | Method of manufacturing transparent conductive film on color filter | |
| Megouda et al. | Investigation of morphology, reflectance and photocatalytic activity of nanostructured silicon surfaces | |
| CN1328962A (en) | Method for preparing nanometer titanium dioxide micropowder | |
| TWI709448B (en) | Nanowire and production method thereof, nanowire dispersion and transparent and electrically conductive film | |
| CN107601487A (en) | A kind of modified graphene and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 272100 A5 building, Chongwen Avenue research and production base, Jining hi tech Zone, Shandong Patentee after: Shandong lett Nano Technology Co., Ltd. Address before: 272100 A5 building, Chongwen Avenue research and production base, Jining hi tech Zone, Shandong Patentee before: Jining Leader Nano Technology Co., Ltd. |