CN106856222A - Based on CH3NH2PbBr3High Performance X-ray sensor of perovskite monocrystalline and preparation method thereof - Google Patents
Based on CH3NH2PbBr3High Performance X-ray sensor of perovskite monocrystalline and preparation method thereof Download PDFInfo
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Abstract
CH is based on the invention discloses one kind3NH2PbBr3High Performance X-ray sensor of perovskite monocrystalline and preparation method thereof, low cost, performance are high, can be used for digital X-ray detection.The sensor includes：1.CH3NH2PbBr3Perovskite single crystalline substrate, is prepared using alternating temperature crystallisation, and monocrystalline has crystalline quality very high, and preparation method is applied to the preparation of extensive substrate；2. it is located at perovskite crystal top and is provided with row electrode, is made up of the conductive material less to X-ray absorption；3. it is located at perovskite crystal lower section and is provided with row electrode, the electrode is mutually perpendicular to row electrode, and is made up of the good metal material of electric conductivity.Due to CH3NH2PbBr3Perovskite single crystalline substrate has larger thickness and atomic number metals higher, and it has photoelectric transformation efficiency higher to X-ray；In addition, CH3NH2PbBr3The recombination rate of photo-generated carrier is smaller in perovskite single crystalline substrate, therefore X ray sensor sensitivity of the invention is higher.
Description
Technical field
The invention belongs to X ray sensor technical field, and in particular to one kind is based on CH3NH2PbBr3Perovskite monocrystalline
High Performance X-ray sensor and preparation method thereof, including the preparation of X-ray photoelectric conversion material, X ray sensor structure and device
Part preparation method.
Background technology
X-ray imaging is important medical diagnosis and treatment technology, therefore studies new x-ray imaging device and imaging
Technology is the target that people constantly pursue.In the important component of x-ray imaging system, it turns X-ray signal to X-ray detector
Electric signal is changed to, is the core of whole system opto-electronic conversion.High Performance X-ray detector needs have spatial resolution higher
And sensitivity, larger imaging area.
Earliest X-ray detection be by direct-film method, but sensitivity of the film to X-ray is very low, when taking pictures
Required roentgen dose X is big.Subsequent people are using the computer X-ray Imaging based on image plate (Imaging Plate, IP)
(Computer Radiography, CR) realizes the digitalized image of X-ray.Image plate is general with containing rare earth element
BaFBr polycrystal powders are made, and the electronics and hole that it can inspire X-ray ionization are stored with capturing state, by reading
The reading of view data is carried out by going out device.
Digital radial imaging art (Digital Radiography, DR) can realize that real-time digital X truly is penetrated
Line imaging, X-ray can be converted directly into digital electric signal by it.Digital X ray detector can be divided into indirect type numeral X again
X-ray detection X and direct-type digital X-ray detect two classes.In indirect type digital X ray detector, x-ray conversion layer will be incident
X-ray is converted to visible fluorescence, fluorescence signal then is converted into charge signal by photodiode array, finally by electric charge
Acquisition Circuit is acquired to charge signal.Used x-ray conversion layer is made up of XRF material.Conventional X-ray
Fluorescent material has Gd2O2S:Tb and CsI:Tl etc..In direct-type digital X ray detector, x-ray conversion layer is directly by incident X
Ray is converted to charge signal, and charge signal is acquired by electric charge Acquisition Circuit.Used x-ray conversion layer be by
Photoconductive material is constituted, and thickness is typically between 100 microns to 800 microns.Conventional photoconductive material mainly has amorphous selenium (a-
Se), mercuric iodixde (HgI2) and lead oxide (PbO) etc..
Because X-ray energy is converted directly into electric signal by direct-type digital X ray detector, can without middle
See fluorescence conversion process, therefore it can have detectivity higher.Because the penetration capacity of X-ray is very strong, in order to carry
The absorptivity of X-ray high, the photoconductive layer of direct-type digital X ray detector is generally thicker.These photoconductive layers have amorphous
Or polycrystalline structure, photo-generated carrier can be combined in photoconductive layer, photo-generated carrier it is compound with photoconductive thickness
The increase of degree and increase sharply.Therefore, in direct-type digital X ray detector, improve X-ray absorption rate and reduce photoproduction load
There is contradiction, it is necessary to explore new photoelectric conversion material and device architecture to improve detector sensitivity in the recombination rate for flowing son.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention to provide a kind of based on CH3NH2PbBr3Calcium
High Performance X-ray sensor of titanium ore monocrystalline and preparation method thereof, the X ray sensor has that detectivity is high, imaging surface
Product is big, the advantage that sensor construction is simple and preparation cost is cheap.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
One kind is based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, including for opto-electronic conversion
CH3NH2PbBr3Perovskite single crystalline substrate, the perovskite single crystalline substrate top is uniformly laterally arranged and has some row electrodes, described
Perovskite single crystalline substrate lower section is uniformly laterally arranged and has several columns electrode, is mutually perpendicular to the row electrode；
The perovskite single crystalline substrate upper and lower is respectively parallel front and rear cover plate, and the section of the front and rear cover plate is more than institute
State the section of perovskite single crystalline substrate；The front and rear cover plate removes the peripheral edge portion beyond the perovskite single crystalline substrate, uniformly
It is arranged with some lead electrodes in parallel, connection corresponding with the row-column electrode on column direction of being expert at respectively.
Further, the perovskite single crystalline substrate is prepared using alternating temperature crystallisation：
A) methylamine water solution and hydrobromic acid aqueous solution, according in molar ratio 1：1.2, mix in 0 DEG C of water-bath, question response
After end, 10 minutes are stood；
B) solution after reaction is poured into rotary evaporation platform to be evaporated, collects the white powder for separating out；By white powder ether
After cleaning, suction out excess diethyl ether and add excess ethyl alcohol；Alcohol suspending liquid importing rotary evaporation platform is evaporated again, is obtained
CH3NH3Br powders；；
C) CH for obtaining will above be reacted3NH3Br powders, are dissolved in dimethylformamide according to the concentration of 1mol/L, stir
Mix and ultrasound, be completely dissolved it；
D) 1 is weighed：The PbBr of 1 mol ratio2, it is poured slowly into the made solution of step c), by stirring and ultrasound, treat that its is complete
CL, obtains as clear as crystal solution.
E) solution that step d) is obtained is carried out into heating water bath, the initial temperature of water-bath is not higher than 20 DEG C；
F) first stage heating is carried out, heating rate is 0.5 DEG C/min, until solution reaches 60 DEG C；
G) when temperature reaches 60 DEG C, keeping temperature is constant, until starting single nucleus occur in solution；There is single crystalline substance
Its slow growth 30 minutes is continued waiting for after core；
H) improving heating power carries out second stage heating, and heating rate is 0.2 DEG C/min, until solution reaches 65 DEG C；
I) keeping temperature improves heating power and carries out phase III heating after constant 30 minutes, again after reaching 65 DEG C, rises
Warm speed is 0.2 DEG C/min, until reaching 70 DEG C, now monocrystalline enters rapid growth stage；
J) constant 30 minutes of keeping temperature after reaching 70 DEG C, heating power is improved again carries out fourth stage heating, heats up
Speed is 0.1 DEG C/min, until solution reaches 80 DEG C；Enough time is reacted at such a temperature, until crystalline size reaches design
It is required that.
Further, the row electrode uses the conductive material of X-ray weak absorbing, including tin indium oxide.In order to reduce row
The absorption of electrode pair X-ray, using the conductive material less to X-ray absorption.
Further, the row electrode is using the metal material for having electric conductivity, including gold.
Further, the front and rear cover plate is with plastics or ceramics as material.
Based on CH3NH2PbBr3The preparation method of the High Performance X-ray sensor of perovskite monocrystalline, comprises the following steps
1) row-column electrode is prepared in perovskite single crystalline substrate；
2) extraction electrode corresponding with the row-column electrode is prepared on front and rear cover plate；
3) front and rear cover plate with lead electrode is packaged with perovskite single crystalline substrate, constitutes the X ray sensor.
Further, row electrode is prepared by mask sputtering method in the perovskite single crystalline substrate top surface, the row electrode
With strip pattern.
Further, row electrode is prepared in the perovskite single crystalline substrate underrun mask sputtering method, the row electrode
With strip pattern, and it is mutually perpendicular to row electrode.Row, column electrode is all strip pattern electrode, and is arranged in a mutually vertical manner, and is formed
The passive type addressing circuit of probe unit, is achieved in sensing unit addressing.
Further, sputtered on the front and rear cover plate or the evaporation extraction electrode corresponding with the row-column electrode.
Beneficial effect：The present invention provide based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline and its
Preparation method, compared with prior art, has the advantage that：
1. the present invention uses CH3NH2PbBr3Perovskite monocrystalline as photoelectric conversion layer, by the control to monocrystalline growing process
System, it is easy to obtain perovskite monocrystalline of the thickness at 100 microns to 2 millimeters, can more fully hereinafter absorb the X-ray of incidence.Together
When, the perovskite crystal contains lead atom, can capture more x-ray photons, improves the photoelectric transformation efficiency of X-ray.
2. of the present invention based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline is crystallized using alternating temperature
Method prepares CH3NH2PbBr3Perovskite monocrystalline, it is to avoid the lamination problem of crystal in growth course, and multiple crystal grain are simultaneously raw
The race problem for producing long, improves the quality of perovskite monocrystalline.Meanwhile, by controlling growth time, area can be obtained and reached
To 100 millimeters × 100 millimeters, perovskite monocrystalline of the thickness more than 2 millimeters reaches the practical requirement of X ray sensor.
3. of the present invention based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline is using using calcium titanium
Ore deposit monocrystalline is as photoelectric sensing layer, and the mobility of photo-generated carrier is very high.Meanwhile, when photo-generated carrier is freely transmitted in monocrystalline
Between it is long.Therefore, in perovskite mono crystalline photovoltaic conversion layer, the recombination rate of photo-generated carrier is very low.Again with above two advantage phases
With reference to X ray sensor proposed by the invention has detectivity very high.
4. due to proposed by the present invention based on CH3NH2PbBr3The High Performance X-ray sensor unit photoproduction of perovskite monocrystalline
Electric current can reach tens of nas, it is possible to using the output of simple passive matrix addressing circuit realiration detectable signal, device
Part simple structure, significantly reduces the preparation cost of sensor.
Brief description of the drawings
Fig. 1 is X ray sensor structure chart of the invention；
Wherein have：CH3NH2PbBr3It is perovskite single crystalline substrate 1, row electrode 2, row electrode 3, lead electrode 4, back shroud 5, preceding
Cover plate 6；
Fig. 2 is the profile of Fig. 1；
Fig. 3 is the XRD of prepared perovskite single crystalline substrate in the present invention；
Fig. 4 be the present invention to voltage be 40kV, electric current for 400uA x-ray source X-ray switch response characteristic figure.
Specific embodiment
The present invention is further described below in conjunction with the accompanying drawings.
The present invention provides a kind of low cost, performance X ray sensor high, can be used for digital X-ray detection.Such as Fig. 1
It show a kind of based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, the sensor includes：
1.CH3NH2PbBr3Perovskite single crystalline substrate.The perovskite crystal is prepared using alternating temperature crystallisation, and monocrystalline has crystallization very high
Quality, and preparation method is applied to the preparation of extensive substrate.2. it is located at perovskite crystal top and is provided with row electrode, the electrode
By the conductive material less to X-ray absorption, such as ito transparent electrode material is constituted.3. perovskite crystal lower section is located to be provided with
Row electrode, the electrode is mutually perpendicular to row electrode, and by the good metal material of electric conductivity, such as Au is constituted.Due to
CH3NH2PbBr3Perovskite single crystalline substrate has larger thickness and atomic number metals higher, and it has higher to X-ray
Photoelectric transformation efficiency.In addition, CH3NH2PbBr3The recombination rate of photo-generated carrier is smaller in perovskite single crystalline substrate, therefore this
Invention propose based on CH3NH2PbBr3The X ray sensor sensitivity of perovskite monocrystalline is higher.
Embodiment
It is proposed by the present invention based on CH with reference to Fig. 13NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, the biography
Sensor includes：CH3NH2PbBr3Perovskite single crystalline substrate 1, sets row electrode 2, in perovskite in the top of perovskite single crystalline substrate 1
Crystal lower section sets row electrode 3, and the front and rear cover plate 5,6 with lead electrode 4 is packaged with perovskite single crystalline substrate 1, constitutes X and penetrates
Line sensor.
For X-ray absorption rate in existing digital X-ray sensor and the conflicting problem of photo-generated carrier recombination rate,
CH of the present invention3NH2PbBr3Perovskite single crystalline substrate is used for the opto-electronic conversion of x-ray, can obtain probe response degree higher.
CH3NH2PbBr3Perovskite method for preparing single crystal is：
A) by methylamine water solution and hydrobromic acid aqueous solution, according in molar ratio 1：1.2, mix in 0 DEG C of water-bath, treat anti-
After should terminating, 10 minutes are stood.
B) solution after reaction is poured into rotary evaporation platform to be evaporated, collects the white powder for separating out.By white powder ether
After cleaning, suction out excess diethyl ether and add excess ethyl alcohol.Alcohol suspending liquid importing rotary evaporation platform is evaporated again, is obtained
CH3NH3Br powders.
C) CH for obtaining will above be reacted3NH3Br powders, CH is dissolved according to the concentration of 1mol/L3NH3Br is dissolved in diformazan
In base formamide (DMF), stirred using glass bar and ultrasound, be completely dissolved it.
D) 1 is weighed：The PbBr of 1 mol ratio2, it is poured slowly into the made solution of step c), by stirring and ultrasound, treat that its is complete
CL, obtains as clear as crystal solution.
E) solution that step d) is obtained is carried out into heating water bath, the initial temperature of water-bath is not higher than 20 DEG C.
F) first stage heating is carried out, heating rate is 0.5 DEG C/min, until solution reaches 60 DEG C.
G) when temperature reaches 60 DEG C, keeping temperature is constant, until starting single nucleus occur in solution.There is single crystalline substance
Its slow growth 30 minutes is continued waiting for after core.
H) improving heating power carries out second stage heating, and heating rate is 0.2 DEG C/min, until solution reaches 65 degree.
I) keeping temperature improves heating power and carries out phase III heating after constant 30 minutes, again after reaching 65 degree, rises
Warm speed is 0.2 DEG C/min, until reaching 70 DEG C, now monocrystalline enters rapid growth stage.
J) constant 30 minutes of keeping temperature after reaching 70 DEG C, heating power is improved again carries out fourth stage heating, heats up
Speed is 0.1 DEG C/min, until solution reaches 80 DEG C.Enough time is reacted at such a temperature, until crystalline size reaches design
It is required that.
The lead electrode of X ray sensor row, column electrode proposed by the present invention and cover plate all can by mask evaporation or
It is prepared by sputtering.Wherein row electrode is made up of the conductive material less to X-ray absorption, such as ITO.Other electrodes are by electric conductivity
Excellent metal material is constituted.
It is the top view with reference to Fig. 1 with reference to Fig. 2.
It is the CH prepared using the inventive method with reference to Fig. 33NH2PbBr3Perovskite crystal X ray diffracting spectrum.Due to figure
In peak point between intensity there is the multiple proportion of positive integer, control PDF cards understand that the surface of the crystal only exists
(100) crystal face states, can thereby determine that the material that the present invention grows is monocrystalline.
With reference to Fig. 4 be in the present invention single detected pixel when -0.1V is biased, the when m- electric current under pulsed X-ray irradiation
Response curve, it is possible thereby to find the photogenerated current of single detected pixel can be responded with X-ray pulse.
It is proposed by the present invention a kind of based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline has highly sensitive
The characteristics of degree, high current gain.Contrast classical amorphous selenium X-ray flat panel detector, perovskite monocrystalline used in the present invention
In carrier mobility 140cm2v-1s-1, carrier lifetime is 1 μ s, and the carrier mobility of amorphous selenium is 0.1cm2v-1s-1
Carrier lifetime is 10ns, therefore the exciton diffusion length of perovskite monocrystalline can reach more than 1000 times of traditional amorphous selenium.
And when X-ray is detected, absorption coefficient is determined by the atomic number Z of absorbing material, the atomic number 82 of Pb is more than the 78 of Se,
Its effective absorber thickness in 60KV only needs 200um, far below the 900um of amorphous selenium.Therefore it is proposed by the present invention to be based on
CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, its detection circuit bias voltage is only 0.1V, far below amorphous
The 30V biass of selenium detector.Photoelectric conversion layer thickness reduces 80% than amorphous selenium detector, and the sensitivity to X-ray is improved
More than 10 times.
The above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (9)
1. it is a kind of to be based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, it is characterised in that：Including for photoelectricity
The CH of conversion3NH2PbBr3Perovskite single crystalline substrate (1), perovskite single crystalline substrate (1) top is uniformly laterally arranged and has some
Row electrode (2), perovskite single crystalline substrate (1) lower section is uniformly laterally arranged and has several columns electrode (3), with the row electrode
(2) it is mutually perpendicular to；
Perovskite single crystalline substrate (1) upper and lower is respectively parallel front and rear cover plate (5,6), the front and rear cover plate (5,6)
Section of the section more than the perovskite single crystalline substrate (1)；The front and rear cover plate (5,6) removes the perovskite single crystalline substrate
(1) peripheral edge portion beyond, being uniformly laterally arranged has some lead electrodes (4), with ranks electricity on column direction of being expert at respectively
Pole (2,3) correspondence is connected.
2. according to claim 1 based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, its feature exists
In：The perovskite single crystalline substrate (1) is prepared using alternating temperature crystallisation：
A) methylamine water solution and hydrobromic acid aqueous solution, according in molar ratio 1：1.2, mix in 0 DEG C of water-bath, question response terminates
Afterwards, 10 minutes are stood；
B) solution after reaction is poured into rotary evaporation platform to be evaporated, collects the white powder for separating out；White powder is cleaned with ether
Afterwards, suction out excess diethyl ether and add excess ethyl alcohol；Alcohol suspending liquid importing rotary evaporation platform is evaporated again, is obtained
CH3NH3Br powders；
C) CH for obtaining will above be reacted3NH3Br powders, are dissolved in dimethylformamide according to the concentration of 1mol/L, and stirring is simultaneously
Ultrasound, is completely dissolved it；
D) 1 is weighed：The PbBr of 1 mol ratio2, it is poured slowly into the made solution of step c), by stirring and ultrasound, treat that it is completely molten
Solution, obtains as clear as crystal solution.
E) solution that step d) is obtained is carried out into heating water bath, the initial temperature of water-bath is not higher than 20 DEG C；
F) first stage heating is carried out, heating rate is 0.5 DEG C/min, until solution reaches 60 DEG C；
G) when temperature reaches 60 DEG C, keeping temperature is constant, until starting single nucleus occur in solution；After there is single nucleus
Continue waiting for its slow growth 30 minutes；
H) improving heating power carries out second stage heating, and heating rate is 0.2 DEG C/min, until solution reaches 65 DEG C；
I) keeping temperature improves heating power and carries out phase III heating after constant 30 minutes, again after reaching 65 DEG C, and heat up speed
Rate is 0.2 DEG C/min, until reaching 70 DEG C, now monocrystalline enters rapid growth stage；
J) constant 30 minutes of keeping temperature after reaching 70 DEG C, heating power is improved again carries out fourth stage heating, heating rate
It it is 0.1 DEG C/min, until solution reaches 80 DEG C；Enough time is reacted at such a temperature, until crystalline size reaches design and wants
Ask.
3. according to claim 1 based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, its feature exists
In：The row electrode (2) uses the conductive material of X-ray weak absorbing, including tin indium oxide.
4. according to claim 1 based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, its feature exists
In：The row electrode (3) is using the metal material for having electric conductivity, including gold.
5. according to claim 1 based on CH3NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline, its feature exists
In：The front and rear cover plate (5,6) is with plastics or ceramics as material.
6. any described based on CH according to claim 1 to 53NH2PbBr3The High Performance X-ray sensor of perovskite monocrystalline
Preparation method, it is characterised in that：Comprise the following steps
1) row-column electrode (2,3) is prepared in perovskite single crystalline substrate (1)；
2) extraction electrode (4) corresponding with the row-column electrode (2,3) is prepared on front and rear cover plate (5,6)；
3) front and rear cover plate (5,6) with lead electrode (4) is packaged with perovskite single crystalline substrate (1), constitutes X-ray sensing
Device.
7. according to claim 6 based on CH3NH2PbBr3The preparation side of the High Performance X-ray sensor of perovskite monocrystalline
Method, it is characterised in that：Row electrode (2), row electricity are prepared by mask sputtering method in perovskite single crystalline substrate (1) top surface
Pole (2) is with strip pattern.
8. according to claim 6 based on CH3NH2PbBr3The preparation side of the High Performance X-ray sensor of perovskite monocrystalline
Method, it is characterised in that：Row electrode (3), row electricity are prepared in perovskite single crystalline substrate (1) the underrun mask sputtering method
Pole (3) is mutually perpendicular to strip pattern with row electrode.
9. according to claim 6 based on CH3NH2PbBr3The preparation side of the High Performance X-ray sensor of perovskite monocrystalline
Method, it is characterised in that：Draw corresponding with the row-column electrode (2,3) is sputtered or is deposited with the front and rear cover plate (5,6)
Go out electrode (4).
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| CN109088003A (en) * | 2018-07-13 | 2018-12-25 | 华中科技大学 | Based single crystal transfer method prepares the method and its application of solar battery light-absorption layer |
| CN109473557A (en) * | 2018-11-05 | 2019-03-15 | 长春工业大学 | A kind of preparation method of hybrid inorganic-organic perovskite optoelectronic film sensor |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of compound scintillator of perovskite crystal/quantum dot and its preparation method and application |
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| WO2022179258A1 (en) * | 2021-02-26 | 2022-09-01 | 深圳先进技术研究院 | Direct electromagnetic radiation detector and manufacturing method therefor |
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| CN107316668A (en) * | 2017-08-02 | 2017-11-03 | 北京大学 | A kind of X-ray protection structure based on perovskite material and preparation method thereof |
| CN108183119A (en) * | 2017-12-19 | 2018-06-19 | 东南大学 | A kind of X-ray detector and its detection method with energy resolution |
| CN108183119B (en) * | 2017-12-19 | 2020-07-14 | 东南大学 | X-ray detector with energy resolution and detection method thereof |
| CN109088003A (en) * | 2018-07-13 | 2018-12-25 | 华中科技大学 | Based single crystal transfer method prepares the method and its application of solar battery light-absorption layer |
| CN109473557A (en) * | 2018-11-05 | 2019-03-15 | 长春工业大学 | A kind of preparation method of hybrid inorganic-organic perovskite optoelectronic film sensor |
| CN109473557B (en) * | 2018-11-05 | 2023-06-06 | 长春工业大学 | Preparation method of organic-inorganic hybrid perovskite photoelectric thin film sensor |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of compound scintillator of perovskite crystal/quantum dot and its preparation method and application |
| CN109851510B (en) * | 2018-12-21 | 2021-09-28 | 东南大学 | Perovskite crystal/quantum dot composite scintillator and preparation method and application thereof |
| CN112071989A (en) * | 2020-09-14 | 2020-12-11 | 吉林大学 | Perovskite single crystal-based X-ray detector and preparation method thereof |
| WO2022179258A1 (en) * | 2021-02-26 | 2022-09-01 | 深圳先进技术研究院 | Direct electromagnetic radiation detector and manufacturing method therefor |
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