CN106851924A - A kind of light modulating device and its implementation suitable for chip OVP pins - Google Patents
A kind of light modulating device and its implementation suitable for chip OVP pins Download PDFInfo
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- CN106851924A CN106851924A CN201710201995.1A CN201710201995A CN106851924A CN 106851924 A CN106851924 A CN 106851924A CN 201710201995 A CN201710201995 A CN 201710201995A CN 106851924 A CN106851924 A CN 106851924A
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- chip
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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Abstract
The invention discloses a kind of light modulating device suitable for chip OVP pins, including chip, there is OVP pins on chip, OVP pins are connected the D poles connection of resistance, metal-oxide-semiconductor with pin successively, the S poles of metal-oxide-semiconductor are connected with ground wire, and the G poles of metal-oxide-semiconductor are connected with metal-oxide-semiconductor control module.The invention also discloses a kind of implementation method of the light modulating device suitable for chip OVP pins.The features such as present invention is with simple structure, with low cost, reliability high, easy to operate and few maintenance time.
Description
Technical field
The present invention relates to LED actuation techniques, a kind of specifically light modulating device suitable for chip OVP pins and in fact
Existing method.
Background technology
The light modulation of LED uses special light modulation chip mostly on the market at present, is exactly that chip carries light modulation pin, supports
The dimming scope of 10-100%, but when our actually used demand is only confined on and off two states, using this
The special light modulation chip cost performance of kind is not just high, and cost pressure is larger.
The content of the invention
It is an object of the invention to overcome the shortcomings of that above prior art is present, there is provided a kind of simple structure, low cost
The light modulating device suitable for chip OVP (overpressure protection) pin that honest and clean, reliability is high, easy to operate and maintenance time is few.
Another object of the present invention is the implementation method for providing a kind of light modulating device suitable for chip OVP pins.
In order to achieve the above object, the present invention uses following technical scheme：A kind of light modulation dress suitable for chip OVP pins
Put, including chip, there is OVP pins on chip, OVP pins are connected the D poles connection of resistance, metal-oxide-semiconductor, metal-oxide-semiconductor with pin successively
S poles be connected with ground wire, the G poles of metal-oxide-semiconductor are connected with metal-oxide-semiconductor control module.
The chip is LED drive chip.
The resistance of the pin connection resistance is 100~200 ohm.
The metal-oxide-semiconductor control module includes that IO exports the G of low and high level module, IO output low and high level modules and metal-oxide-semiconductor
Pole connects.
Conducting internal resistance after the metal-oxide-semiconductor conducting is approximately equal to zero.
The implementation method of the above-mentioned light modulating device suitable for chip OVP pins, comprises the following steps：
(1), metal-oxide-semiconductor is serially connected in the middle of OVP pins and resistance to earth；
(2), metal-oxide-semiconductor can be in two states by MOS control modules：Conducting and disconnection；
(3), when metal-oxide-semiconductor is turned on, internal resistance very little, equivalent to short circuit, approximate OVP pins are directly connected to pin electricity
Power supply ground is hindered, now chip can be bright with normal work, LED；
(4), when metal-oxide-semiconductor disconnects, internal resistance convergence with it is infinitely great, equivalent to open circuit, approximate OVP pins are connected to pipe
To infinite resistance, then to power supply ground, now the protection voltage of chip diminishes pin resistance, and less than load voltage, chip cannot be just
Often work, LED is gone out.
The chip is LED drive chip；The resistance of the pin connection resistance is 100~200 ohm；The metal-oxide-semiconductor
Control module includes that IO exports low and high level module, and IO outputs low and high level module is connected with the G poles of metal-oxide-semiconductor.
The present invention has the following advantages and effect relative to prior art：
1st, the present invention includes chip, has OVP pins on chip, and OVP pins are connected the D of resistance, metal-oxide-semiconductor with pin successively
Pole connects, and the S poles of metal-oxide-semiconductor are connected with ground wire, and the G poles of metal-oxide-semiconductor are connected with metal-oxide-semiconductor control module, with simple structure, cost
The features such as cheap, reliability is high, easy to operate and maintenance time is few.
2nd, the present invention is serially connected in the middle of OVP pins and resistance to earth by by metal-oxide-semiconductor, by control the conducting of metal-oxide-semiconductor with
The switch that shut-off carrys out indirect control chip reaches the purpose of light modulation, and the control signal needed for metal-oxide-semiconductor does not have particular/special requirement, as long as energy
Producing common low and high level can just control metal-oxide-semiconductor, very low to control module requirement, it is not necessary to special chip come produce PWM or
The sophisticated signals such as IIC are controlled.
3rd, the control mode in the present invention, chip is standby with traditional close to stopped status in the case of without output
State is compared, more energy efficient with more preferable stand-by power consumption.
Brief description of the drawings
Fig. 1 is a kind of connection diagram of the light modulating device suitable for chip OVP pins.
Label is as follows with title in figure：
| 1 | Chip | 2 | OVP pins |
| 3 | Pin connects resistance | 4 | Metal-oxide-semiconductor |
| 5 | Power supply ground | 6 | Metal-oxide-semiconductor control module |
Specific embodiment
For ease of it will be appreciated by those skilled in the art that below in conjunction with the accompanying drawings and embodiment the present invention is made it is further specifically
It is bright.
Embodiment 1：
As shown in figure 1, a kind of light modulating device suitable for chip OVP pins, including chip, there is OVP pins on chip,
OVP pins are connected the D poles connection of resistance, metal-oxide-semiconductor with pin successively, and the S poles of metal-oxide-semiconductor are connected with ground wire, the G poles of metal-oxide-semiconductor and
Metal-oxide-semiconductor control module is connected.
Chip in the present embodiment is LED drive chip；The resistance of pin connection resistance is 100~200 ohm.This implementation
The resistance of example pin connection resistance is 150 ohm of
Metal-oxide-semiconductor control module in the present embodiment includes that IO exports low and high level module, IO output low and high level modules with
The G poles connection of metal-oxide-semiconductor.
The implementation method of the above-mentioned light modulating device suitable for chip OVP pins, comprises the following steps：
(1), metal-oxide-semiconductor is serially connected in the middle of OVP pins and resistance to earth；
(2), metal-oxide-semiconductor can be in two states by MOS control modules：Conducting and disconnection；
(3), when metal-oxide-semiconductor is turned on, internal resistance very little, equivalent to short circuit, approximate OVP pins are directly connected to pin electricity
Power supply ground is hindered, now chip can be bright with normal work, LED；
(4), when metal-oxide-semiconductor disconnects, internal resistance convergence with it is infinitely great, equivalent to open circuit, approximate OVP pins are connected to pipe
Pin resistance to infinite resistance, then to power supply ground, chip cannot normal work, LED goes out.
The present embodiment is serially connected in the middle of OVP pins and resistance to earth by by metal-oxide-semiconductor, by control the conducting of metal-oxide-semiconductor with
The switch that shut-off carrys out indirect control chip reaches the purpose of light modulation, and the control signal needed for metal-oxide-semiconductor does not have particular/special requirement, as long as energy
Producing common low and high level can just control metal-oxide-semiconductor, very low to control module requirement, it is not necessary to special chip come produce PWM or
The sophisticated signals such as IIC are controlled.Control mode in the present embodiment, without output in the case of chip close to stopped status,
It is more energy efficient with more preferable stand-by power consumption compared with traditional holding state.
Above-mentioned specific embodiment is the preferred embodiments of the present invention, can not be limited the invention, and others are appointed
Change or other equivalent substitute modes that what is made without departing from technical scheme, are included in protection of the invention
Within the scope of.
Claims (7)
1. a kind of light modulating device suitable for chip OVP pins, it is characterised in that：Including chip, there is OVP pins on chip,
OVP pins are connected the D poles connection of resistance, metal-oxide-semiconductor with pin successively, and the S poles of metal-oxide-semiconductor are connected with ground wire, the G poles of metal-oxide-semiconductor and
Metal-oxide-semiconductor control module is connected.
2. the light modulating device suitable for chip OVP pins according to claim 1, it is characterised in that：The chip is LED
Driving chip.
3. the light modulating device suitable for chip OVP pins according to claim 1, it is characterised in that：The pin connection
The resistance of resistance is 100~200 ohm.
4. the light modulating device suitable for chip OVP pins according to claim 1, it is characterised in that：The metal-oxide-semiconductor control
Module includes that IO exports low and high level module, and IO outputs low and high level module is connected with the G poles of metal-oxide-semiconductor.
5. the light modulating device suitable for chip OVP pins according to claim 1, it is characterised in that：The metal-oxide-semiconductor conducting
Conducting internal resistance afterwards is approximately equal to zero.
6. the implementation method of the light modulating device suitable for chip OVP pins according to any one of Claims 1 to 5, it is special
Levy and be, comprise the following steps：
(1), metal-oxide-semiconductor is serially connected in the middle of OVP pins and resistance to earth；
(2), metal-oxide-semiconductor can be in two states by MOS control modules：Conducting and disconnection；
(3), when metal-oxide-semiconductor is turned on, internal resistance very little, equivalent to short circuit, approximate OVP pins are directly connected to pin resistance and arrive
Power supply ground, now chip can be bright with normal work, LED；
(4), when metal-oxide-semiconductor disconnects, internal resistance convergence with it is infinitely great, equivalent to open circuit, approximate OVP pins are connected to pin electricity
Hinder infinite resistance, then to power supply ground, now the protection voltage of chip diminishes, less than load voltage, chip cannot normal work
Make, LED is gone out.
7. the implementation method of the light modulating device suitable for chip OVP pins according to claim 6, it is characterised in that：Institute
Chip is stated for LED drive chip；The resistance of the pin connection resistance is 100~200 ohm；The metal-oxide-semiconductor control module bag
IO output low and high level modules are included, IO outputs low and high level module is connected with the G poles of metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710201995.1A CN106851924A (en) | 2017-03-30 | 2017-03-30 | A kind of light modulating device and its implementation suitable for chip OVP pins |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710201995.1A CN106851924A (en) | 2017-03-30 | 2017-03-30 | A kind of light modulating device and its implementation suitable for chip OVP pins |
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| Publication Number | Publication Date |
|---|---|
| CN106851924A true CN106851924A (en) | 2017-06-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710201995.1A Pending CN106851924A (en) | 2017-03-30 | 2017-03-30 | A kind of light modulating device and its implementation suitable for chip OVP pins |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102026453A (en) * | 2010-12-31 | 2011-04-20 | 崧顺电子（深圳）有限公司 | Light emitting diode (LED) power source dimming control device |
| CN102082416A (en) * | 2010-12-15 | 2011-06-01 | 深圳茂硕电源科技股份有限公司 | Method for realizing input undervoltage and over-temperature protection based on over voltage protection (OVP) function of Boost control chip |
| US20140192569A1 (en) * | 2013-01-08 | 2014-07-10 | Marvin Cruz ESPINO | Overvoltage protection circuit |
| CN203814020U (en) * | 2014-04-29 | 2014-09-03 | 武汉大学 | Dimmable LED driver chip with soft start and undervoltage locking circuit |
| CN206650875U (en) * | 2017-03-30 | 2017-11-17 | 横店集团得邦照明股份有限公司 | A kind of light modulating device suitable for chip OVP pins |
-
2017
- 2017-03-30 CN CN201710201995.1A patent/CN106851924A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082416A (en) * | 2010-12-15 | 2011-06-01 | 深圳茂硕电源科技股份有限公司 | Method for realizing input undervoltage and over-temperature protection based on over voltage protection (OVP) function of Boost control chip |
| CN102026453A (en) * | 2010-12-31 | 2011-04-20 | 崧顺电子（深圳）有限公司 | Light emitting diode (LED) power source dimming control device |
| US20140192569A1 (en) * | 2013-01-08 | 2014-07-10 | Marvin Cruz ESPINO | Overvoltage protection circuit |
| CN203814020U (en) * | 2014-04-29 | 2014-09-03 | 武汉大学 | Dimmable LED driver chip with soft start and undervoltage locking circuit |
| CN206650875U (en) * | 2017-03-30 | 2017-11-17 | 横店集团得邦照明股份有限公司 | A kind of light modulating device suitable for chip OVP pins |
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Application publication date: 20170613 |